Abstract: An apparatus for forming selectively coated areas on a substrate comprises an extrudate remover configured to selectively remove coating from a selected portion of the substrate. A chuck is configured to secure the substrate. A coating die is arranged proximal the substrate and is in fluid communication with a source of fluid extrudate. During relative motion between the substrate and the coating die, fluid extrudate is deposited onto the substrate. A controller is configured to selectively control the relative motion between the substrate and coating remover, and to control operation of the extrudate remover. The invention also provides a method of forming selectively coated areas on a substrate comprising the steps of inducing relative movement between a coating dispenser and the substrate, applying fluid material from the coating dispenser onto the substrate during the relative movement, and selectively removing a portion of the applied fluid from the substrate.

Abstract: A method, system and computer program product for implementing an enhanced optical mirror coupling and alignment mechanism utilizing two-photon resist. An initial placement is provided for one or more vias on a printed circuit board. A via is filled with a resist. A series of tightly focused light beams suitably exposes the resist at varying depths in the via, the varying depths defining a sloped polymer in the via after removing resist that had not been at the focus of the light beam. The sloped polymer is coated with reflective material to reflect light into or out of the via.

Abstract: A system and a method for inspection aided printing, the method may include printing, by a printing unit of a system, a pattern on an area of a substrate, during a printing process; inspecting, by an inspection unit of the system, the area to provide inspection results; searching, by a processor of the system, for a defect, based upon the inspection results; and wherein if a defect is found—determining whether to (a) repair the substrate, (b) perform a corrective measure for improving the printing process, or (c) perform no corrective measure in response to the defect.

Abstract: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.

Abstract: Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. In certain embodiments, the substrate can be biased during selective inhibition. Process parameters including bias power, exposure time, plasma power, process pressure and plasma chemistry can be used to tune the inhibition profile. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate/wordline fill, and 3-D integration using through-silicon vias.

Abstract: A printing method for use in fabrication of an electronic unit comprising one or more lines of a regularly repeating structural feature formed over a substrate, the structural feature repeating over a regular interval along each line. The method comprises: using a first print-head arrangement to print portions of a composition at a first pitch along each of the lines; and using a second print-head arrangement to print portions of the composition at a second pitch along each of the lines; such that the first and second pitches together produce a beating pattern along each of the lines, having a beating wavelength matched to the interval of the regularly repeating structural feature.

Abstract: A system and method for combinatorial processing of substrates in a processing chamber. The system includes a plurality of generators for supplying power into the processing chamber. A plurality of sputter guns provides power to different regions of a substrate. A switchbox switches power from a generator to a sputter gun via a plurality of coaxial switches. A controller positioned within the switchbox automatically distributes power from a specific generator to a specific sputter gun under programmable logic control.

Abstract: An apparatus for etching features in an etch layer is provided. A plasma processing chamber is provided, comprising a chamber wall, a chuck, a pressure regulator, an electrode or coil, a gas inlet, and a gas outlet. A gas source comprises a fluorine free deposition gas source and an etch gas source. A controller comprises at least one processor and computer readable media, comprising computer readable code for providing a conditioning for a patterned pseudo-hardmask, wherein the conditioning comprises computer readable code providing a fluorine free deposition gas comprising a hydrocarbon gas, computer readable code for forming a plasma, computer readable code for providing a bias less than 500 volts, and computer readable code for forming a deposition on top of the patterned pseudo-hardmask, computer readable code for etching the etch layer, and computer readable code for cyclically repeating the conditioning and etching at least twice.

Abstract: The invention relates to a method for the simultaneous storage and drying of sewage sludge, comprising the following steps: a) mechanically dewatering the sewage sludge down to a dry substance concentration of 10 to 35 percent; b) applying the dewatered sewage sludge to a floor of a greenhouse-type drying hall in which a transparent building envelope forms the roof over the floor; c) drying the sewage sludge using solar radiation that radiates into the drying hall; d) mechanically dewatering additional sewage sludge down to a dry substance concentration of 10 to 35 percent; e) introducing the dewatered additional sewage sludge into the drying hall and mixing the additional sewage sludge with the sewage sludge already in the drying hall; f) drying said mixture using solar radiation that radiates into the drying hall; and g) evacuating the mixture from the drying hall or repeating steps d) to f), wherein in step e), the additional sewage sludge is mixed with the mixture in the drying hall rather than with the s

Abstract: A temperature controlled cosmetic treatment facial mask with area-specific treatments of the present invention includes a substantially planar mask body which is formed with cut-outs for a person's eyes, nose, and mouth. The mask may include a number of large and small area treatment zones in combination with asymmetrical treatment zones suitable for treatment of specific and localized skin conditions. The treatments zones are coated with skin treatments, such as compounds, lotions, gels, and the like as are known in the facial treatment, cosmetics, spa and medical industry. The mask may include a self-heating or cooling substrate to provide temperature control to the face mask and each mask may include heating areas, cooling areas, or both. A system is also provided that includes an imaging device that feeds its output to a central computer system having an image analyzer, CPU, memory and Look Up Table, and face map for determining specific treatment requirements for the particular patient.

Abstract: An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

Abstract: A film-forming apparatus 1 includes a reaction chamber 2, an exhaust mechanism 3, and a pipe 4 connecting them. An inert gas supply pipe 11 supplying an inert gas 15 in the pipe 4, and a trap section 5? connecting with an exhaust pipe 16 exhausting a reaction product 14 are provided in the pipe 4. A substrate is disposed in the reaction chamber 2 and film formation is performed on the substrate by supplying a reaction gas 7 from a reaction gas supply pipe 8. The reaction product 14 is collected in the trap section 5?. An inert gas 15 is supplied to the trap section 5? to pressure-feed the reaction product 14 from the exhaust pipe 16 to a detoxifying apparatus 20. Cleaning is performed by supplying a cleaning gas 21 to the reaction chamber 2 and exhausting the same while bypassing the trap section 5.

Abstract: Technologies are generally described related to the design, manufacture and/or use of electrodes, capacitors, or any other similar component. In an example, a system effective to form a component may include a container effective to receive graphite nanoplatelets and effective to receive ruthenium chloride. The system may include a coating device in communication with the container. The system may further include a processor arranged in communication with the container and the coating device. The processor may be configured to control the container effective to combine the ruthenium chloride with the graphite nanoplatelets under reaction conditions sufficient to form a ruthenium oxide graphite nanoplatelets nanocomposite. The processor may further be configured to control the coaling device effective to coat a support with the ruthenium oxide graphite nanoplatelets nanocomposite.

Abstract: A substrate processing apparatus that can prevent formation of deposit in openings of a plurality of gas supply holes leading into a processing chamber. Each of the gas supply holes is configured to uniformly supply a processing gas, whose molecules are turned into clusters, into the processing chamber and to prevent liquefaction of processing gas when the processing gas is supplied into the processing chamber.

Abstract: An ammonia gas detection apparatus includes an ammonia sensor that is configured to detect an ammonia gas in a gas stream and to generate a first output signal when the ammonia gas is detected in the gas stream. The ammonia sensor does not detect the ammonia gas in the gas stream when the gas stream further includes an interference gas that disrupts operation of the ammonia sensor. A discoloration gauge includes a reaction solution that changes from a first color to a second color responsive to exposure to the ammonia gas in the gas stream, regardless of the presence of the interference gas, and a detector that generates a second output signal responsive to the reaction solution changing from the first color to the second color. A communication interface outputs the first and second output signal to a host computer that detects presence of the ammonia gas.

Abstract: A thin film including characteristics of low permittivity, high etching resistance and high leak resistance is to be formed. A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; and forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer.

Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes: forming a thin film containing a predetermined element on a substrate by repeating a cycle, the cycle including: forming a first layer containing the predetermined element, nitrogen and carbon by alternately performing supplying a source gas containing the predetermined element and a halogen element to the substrate and supplying a first reactive gas containing three elements including the carbon, the nitrogen and hydrogen and having a composition wherein a number of carbon atoms is greater than that of nitrogen atoms to the substrate a predetermined number of times; forming a second layer by supplying a second reactive gas different from the source gas and the first reactive gas to the substrate to modify the first layer; and modifying a surface of the second layer by supplying a hydrogen-containing gas to the substrate.

Abstract: The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

Abstract: A coating powder feed method, coating powder feeding device, electrostatic powder spraycoating apparatus containing such a coating powder feeding device. The invention includes a dense phase powder pump fitted with at least one feed chamber. A control signal to create a partial vacuum in the feed chamber is generated no earlier than simultaneously with, preferably by a predetermined delay time after, a control signal opening a powder intake valve of the feed chamber, as a result of which the beginning of partial vacuum buildup in the feed chamber shall take place no earlier than simultaneously with the initial opening of the powder intake valve or by a defined time delay after the opening of the powder intake valve.

Abstract: A gas flow of a gas pipe is indicated before an electromagnetic valve is actually opened, so that the electromagnetic valve can be prevented from being opened or closed by a wrong manipulation or hazards caused by undesired mixing of gases can be avoided so as to improve safety. The substrate processing apparatus includes a state detection unit configured to detect an opening/closing request state and an opening/closing state of a valve installed at a gas pipeline; and a indication unit configured to indicate a gas flow state of the gas pipeline predicted according to the opening/closing request state and a gas flow state of the gas pipeline when the valve is opened, in a way that each state is distinguished.

Abstract: Methods, systems, and apparatus regarding Dye Sensitized Solar Cells (DSSC) formed using nanocomposite organic-inorganic materials deposited by inkjet printing. Exemplary DSSC embodiments include long, narrow strips of titanium oxide and platinum inkjet-printed on fluorine-tin-oxide (FTO) conductive glass substrates. An exemplary deposition of organic materials may be made at ambient conditions, while the plate of printer where the FTO glass substrates were placed may be kept at 25° C. Exemplary FTO glass substrates with dimensions of about 1×1 m2 may be covered with titanium oxide and platinum strips, while metal fingers of silver or other metal may be formed in between the strips to form separate solar cells. An electrolyte is added between two opposing, complementary electrode substrates to form one or more solar cells. A UV-blocking ink may be deposited to form a thin UV-blocking film on an outer side of the solar glass. Numerous other aspects are described.

Abstract: The simulation method is for predicting a damage amount due to ultraviolet rays in manufacturing a semiconductor device.

Abstract: A substrate processing apparatus is disclosed equipped with a transfer mechanism that transfers a substrate processed at a processing block to a carrier so that the increase of the number of transfer process is suppressed, improving the processing efficiency. The substrate processing apparatus is configured in such a way that, when a second-transfer module houses at least one substrate and a carrier that can house the at least one substrate is not placed in a carrier-placement unit, the at least one substrate is transferred to a buffer module. When the second transfer module houses at least one substrate and the carrier that can house the at least one substrate is placed in the carrier-placement unit, the at least one substrate is transferred to the carrier, regardless of whether or not a substrate is being transferred from the buffer module to the carrier.

Abstract: Provided is a film-forming method for performing a film-forming process on a surface of a target substrate to be processed in an evacuable processing chamber, a recessed portion being formed on the surface of the target substrate. The method includes a transition metal-containing film processing process in which a transition metal-containing film is formed by a heat treatment by using a source gas containing a transition metal; and a metal film forming process in which a metal film containing an element of the group VIII of the periodic table is formed.

Abstract: A developer nozzle supplies a developer onto the surface of a substrate rotating around a vertical axis, while a pure water nozzle supplies pure water onto the surface of the rotating substrate. The pure water nozzle is spaced apart from the developer nozzle and located on an outer side of the substrate with respect to the developer nozzle. The pure water restricts flow of the developer on the substrate and causes the developer to spread toward a clockwise side of the substrate when the substrate rotates in a clockwise direction. A liquid film containing the developer and the pure water is formed on the substrate. The developer nozzle and the pure water nozzle are spaced apart from each other to suppress splattering of the developer and the pure water due to collision of the developer with the pure water.

Abstract: An apparatus may comprise a plasma deposition unit, a movement system, and a mesh system. The plasma deposition unit may be configured to generate a plasma. The movement system may be configured to move a substrate under the plasma deposition unit. The mesh system may be located between the plasma deposition unit and the substrate in which a mesh may comprise a number of materials for deposition onto the substrate and in which the plasma passing through the mesh may cause a portion of the number of materials from the mesh to be deposited onto the substrate.

Abstract: A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.

Abstract: The invention aims to provide substrate treatment equipment that can automatically collect a substrate in a normal condition without needing manual operation. The equipment includes a substrate holder 26 for holding substrates 12 in a multistage manner and a substrate transfer unit 34 for transferring the substrates 12 into the substrate holder 26, wherein a substrate holding condition of the substrate holder 26 is sensed by a sensing section 60. The sensing section 60 has photo-sensors 64a, 64b, and sensing waveforms sensed by the photo-sensors 64a, 64b are compared with a normal waveform. A control section 66 is provided, which controls a substrate transfer unit 34 such that substrates 12 other than at least a substrate 12 that was determined to be abnormal are transferred by the unit.

Abstract: A semiconductor device and methods of manufacturing the same are disclosed. Specifically, methods and devices for manufacturing optocouplers are disclosed. Even more specifically, methods and devices that deposit one or more encapsulant materials on optocouplers are disclosed. The encapsulant material may include silicone and the devices used to deposit the silicone may be configured to simultaneously deposit the silicone on different sides of the optocoupler, thereby reducing manufacturing steps and time.

Abstract: The present invention discloses a sealant coating equipment of a liquid crystal panel which comprises a nozzle, the nozzle is used for sealant coating of substrates required to be sealant-coated, the equipment further comprises a monitoring and detecting device. When the nozzle is performing sealant coating, the monitoring and detecting device is used for instantaneously acquiring images after the sealant coating is performed by the nozzle, determining if there are defects of sealant coating according to the acquired images, and recording location data of defective sealant coatings when determining that there are the defective sealant coatings. When the nozzle finishes the sealant coating, the monitoring and detecting device is further used for displaying images of the defective sealant coatings and locations data of the defective sealant coatings. The present invention further discloses a sealant coating method of a liquid crystal panel.

Abstract: A coating/developing device includes a processing block having a plurality of coating unit blocks stacked and a developing unit block stacked on the coating unit blocks. Each of the unit blocks is provided with a liquid processing unit for coating a liquid chemical on a substrate, a heating unit for heating the substrate, a cooling unit for cooling the substrate and a transfer unit for transferring the substrate between the units. The liquid processing unit is provided with a coating unit for coating a resist liquid on the substrate, a first bottom antireflection coating (BARC) forming unit for coating a liquid chemical for a BARC on the substrate before the resist liquid is coated thereon, and a second BARC forming unit for coating a liquid chemical for the BARC on the substrate after the resist liquid is coated thereon.

Abstract: Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.

Abstract: The invention is directed to enzyme immobilization compositions comprising: one or more enzymes, a humectant, an acrylic-based monomer, a water-soluble organic photo-initiator and a water-soluble acrylic-based cross-linker in a substantially homogeneous aqueous mixture. The invention is also directed to methods for forming sensors comprising such compositions and to apparati for forming arrays of immobilized layers on an array of sensors by dispensing such compositions onto a substrate.

Abstract: A system and method for spray gun or nozzle control wherein the spray gun liquid discharge pattern is dynamically varied to correspond to the dimensions of a moving target object or a portion of the moving target. The spray gun includes inputs for fan air, atomizing air, and liquid, as well as cylinder air. Upon detection of a target object approaching, such as on a conveyor belt, the fan air pressure, atomizing air pressure, liquid pressure, and cylinder air pressure are varied according to predefined or contemporaneously generated curves to provide a spray pattern that corresponds to the shape of the target object or portion of the target object, thus minimizing waste and inefficiency due to overspray.

Abstract: A wet masking system for applying a maskant to a portion of a workpiece includes one or more pressurized mixing vessels with agitators for continuously blending the ingredients of the maskant, a dispensing system connected to the vessels for supplying metered volumes of maskant to injection valves. An electronic controller operable for controlling the system to coat the portion. A fixture for holding the workpiece with just the portion inside a cavity of the fixture includes one or more inlet ports alignable with injection ports of the injection valves injecting the maskant into the cavity. Heaters are positioned for drying or flash drying the maskant on the portion of the workpiece. Recirculation lines from the injection valves to at least one of the mixing vessels operated by the controller to flow the maskant through the recirculation lines after a period of time when no maskant is flowing through masking system.

Abstract: An improved pneumatic jetting valve includes a housing with first and second chambers. A pneumatic piston is enclosed between the chambers. First and second solenoid valves are configured to respectively supply air pressure to the chambers and to exhaust the chambers. A controller is operable to regulate the pressurization and venting of the chambers. The controller controls the timing of control signals for the first and second solenoid valves to control the overlap time during which both the first and second chambers are pressurized. By controlling this overlap time, the controller controls the speed of the drive pin of the jetting valve and thereby the speed at which the valve closes to jet a droplet of material. This allows a valve speed to be selected that is most appropriate for the viscosity of the material being jetted. Numerous new methods for utilizing the improved jetting valve and system are disclosed.

Abstract: An image forming apparatus includes a coating portion configured to perform a coating process that forms a coating film on a recording sheet with an image formed thereon, a main transport path configured to transport the recording sheet with the image formed thereon and to have a branching portion formed thereon, and a sub transport path configured to be once branched from the main transport path at the branching portion and to be returned to the main transport path again. The coating portion is disposed on the sub transport path.

Abstract: Embodiments of the invention relate to systems and methods for fabricating hybrid rocket motor fuel grains. In one embodiment, a method for fabricating a rocket motor fuel grain can be provided. The method can include providing a platform operable to support a rocket motor fuel grain during fabrication. The method can also include disposing at least one fuel material onto the platform to form a material layer. Further, the method can include successively disposing additional fuel material onto the material layer in small amounts, wherein the rocket motor fuel grain is formed on the platform.

Abstract: A pixel observation system includes a memory unit, a coordinate generation unit, and an observation unit. The memory unit is configured to store at least nozzle information indicative of discharge states of a liquid material in a plurality of nozzles and arrangement information indicative of an arrangement of each of the nozzles with respect to each of a plurality of pixel regions in relative movement of the nozzles and a substrate. The coordinate generation unit is configured to generate observation coordinates of observation regions on the substrate based on the nozzle information and the arrangement information, and to include coordinates of at least some of the pixel regions over which the nozzles scan through one cycle of the relative movement in the observation coordinates. The observation unit is configured and arranged to observe the pixel regions positioned at the observation coordinates generated by the coordinate generation unit.

Abstract: The invention relates to a method for carbonitriding at least one component (12) in a treatment chamber (16), in which at least one process gas (28; 30) is introduced into the treatment chamber (16), wherein a hydrogen content (44) is detected in an atmosphere developing in the treatment chamber (16) and is maintained in a desired range (55; 57) at least at intervals by influencing of the amount of the process gas (28; 30) that is fed.

Abstract: A transfer flow is produced in accordance with a process recipe of a process to be carried out. In the transfer flow, a type of modules listed in accordance with a substrate transfer order is associated with a necessary staying time from when the substrate is transferred into a module by a substrate transfer unit to when the substrate is ready to be transferred back to the substrate transfer unit after the corresponding process is finished. A cycle limiting time is determined to be the longest necessary transfer cycle time among those obtained by dividing the necessary staying time by the number of the modules mounted in the coater/developer. The number of the modules to be used is determined to be a value obtained by dividing the necessary staying time by the cycle limiting time or a nearest integer to which the value is raised.

Abstract: A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

Abstract: A substrate processing apparatus having a processing chamber for processing a substrate; a processing gas feeding line for feeding a processing gas into the processing chamber; an inert gas feeding line for feeding an inert gas into the processing chamber; an inert gas vent line provided in the inert gas feeding line, for exhausting the inert gas fed into the inert gas feeding line without feeding the inert gas into the processing chamber; a first valve provided in the inert gas feeding line, on a downstream side of a part where the inert gas vent line is provided in the inert gas feeding line; a second valve provided in the inert gas vent line; and an exhaust line that exhausts an inside of the processing chamber.

Abstract: A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Abstract: There are provided n number of line-type inkjet nozzles (2) which include nozzles (4) that eject a liquid material and are arranged in a row, and which are arranged in parallel with each other so that positions of the nozzles (4) are shifted from each other by 1/n of a nozzle pitch (P1). Thus, an inkjet head (1) as a whole has a state equivalent to a state in which the nozzles (4) are arranged at 1/n of a nozzle pitch of one line-type inkjet nozzle (2). The inkjet head (1) is capable of adjusting a timing of ejecting the liquid material for each line-type inkjet nozzle (2). Accordingly, adjustment of a dot pitch such as fine coating and rough coating can be performed with ease.

Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: A cleaning control apparatus capable of performing a cleaning process efficiently regardless of qualities and thicknesses of films formed in a process tube and a gas supply nozzle. The cleaning control apparatus employs cleaning request signal output units configured to output cleaning request signals requesting cleaning processes of a silicon-containing gas supply system and nitriding source gas supply system when accumulated amounts of the molecules of the silicon-containing gas and the nitriding source gas exceeds preset values.

Abstract: Technologies are generally described for a porous graphene electrode material is described herein that may incorporate a three-dimensional open-cell graphene structure fabricated via chemical vapor deposition onto a metal foam. After the graphene is deposited, the metal foam may be dissolved, leaving a three-dimensional open-cell graphene structure that may include single or few layer graphene. Pseudo-capacitive materials, such as RuO2, Fe3O4, or MnO2, may be deposited within the pores of the a three-dimensional open-cell graphene structure to form the porous graphene electrode material. The porous graphene electrode material may have a specific capacitance comparable to chemically modified graphene (CMG) electrodes. The porous graphene electrode material may also have a conductivity greater than CMG electrodes of equivalent surface area. Use of the porous graphene electrode material in capacitors may result in siginificant improvements in specific power compared to CMG based capacitors.

Abstract: A method includes receiving a primary image as input data and receiving textured image data for rendering a perceived non-uniform texture on a printed output of the primary image. The primary image input data is used for determining a low coverage portion and a high coverage portion. The method then includes applying clear toner to the low coverage portion and applying colored toner at variable anisotropic orientations to the high coverage portion.