Abstract: A selective plasma nitriding method includes mounting an object to be processed on a mounting table in a processing chamber of a plasma processing apparatus, the object having a silicon surface and a silicon compound layer exposed; setting a pressure in the processing chamber within the range of about 66.7 Pa to 667 Pa; and generating a nitrogen-containing plasma while applying a bias voltage to the object by supplying to the mounting table a high frequency power with an output of about 0.1 W/cm2 to 1.2 W/cm2 per unit area of the object. The plasma nitriding method further includes selectively nitriding the silicon surface by the nitrogen-containing plasma to form a silicon nitride film.

Abstract: A process for depositing nanoparticles on a surface. The process includes the steps of: providing a sol including a volatile non-aqueous liquid and nanoparticles suspended in the non-aqueous liquid; processing the sol to form a plurality of droplets; depositing the plurality of droplets on a surface; and evaporating the non-aqueous liquid from the surface leaving a residue of nanoparticles. The liquid can be selected from heptane, chloroform toluene, and hexane and mixtures thereof and the nanoparticles are desirably silver nanoparticles. The plurality of droplets may be formed by a spray process. The surface may be selected from a particular area, region, portion, or dimension of a medical device, device material, packaging material or combinations thereof. The residue of nanoparticles desirably provides antimicrobial properties.

Abstract: The present invention (i) uses a mask unit (80) including: a shadow mask (81) that has an opening (82) and that is smaller in area than a vapor deposition region (210) of a film formation substrate (200) and; a vapor deposition source (85) that has a emission hole (86) for emitting a vapor deposition particle, the emission hole (86) being provided so as to face the shadow mask (81), the shadow mask (81) and the vapor deposition source (85) being fixed in position relative to each other, (ii) adjusts an amount of a void between the shadow mask (81) and the film formation substrate (200), (iii) moves at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof while uniformly maintaining the amount of the void between the mask unit (80) and the film formation substrate (200), and (iv) sequentially deposit the vapor deposition particle onto the vapor deposition region (210) through the opening (82) of the shadow mask (81).

Abstract: An automated seed treatment system is adapted for on-site operation at a retail seed distributor. A sealed seed-treater vessel is configured to apply a plurality of chemical treatments to a batch of seed based on a recipe. A programmable system controller is electrically coupled to pump controllers of pump-stations. The controller is configured to receive a material transfer indication from each pump-stations and control the pump controllers in accord with the seed treatment recipe. The programmable system controller is configured to collect operational data representing at least consumption of chemical from the chemical container at each of the pump-stations based on the corresponding material transfer indication during seed treatment and to provide the operational data to a remotely hosted information system located remotely from the site of the retail seed distributor and accessible to at least one third party that is distinct from the retail seed distributor.

Abstract: A method of sealing pipes or ducts with a duct coating applicator having a camera mounted thereon. The duct coating applicator sprays plural compounds on an interior of the duct. A duct coating applicator mounted camera records a video of an inside of the duct. The video is quickly accessible for customer review on site. A customer billing statement is quickly generated on site. A controller communicates with the nozzle carriage. A pump feeds the duct coating applicator from a resin tank via a resin supply line. The controller receives resin temperature and pressure, duct diameter, and duct coating applicator speed data and can adjust resin feed and duct coating applicator speed rates. The duct coating applicator has a cylindrical body having an outer member and a core member. An adjustable nozzle is on an outlet end for dispersing resin. Extension arms may be adjusted to accommodate various duct sizes.

Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: A robot arm includes a support, a wrist joint rotatably connected to the support, a distal joint rotatably connected to the wrist joint, a first driving mechanism driving the wrist joint, and a second driving mechanism driving the distal joint. The first driving mechanism comprises a first input shaft connected to the wrist joint via two bevel gears, and the first driving mechanism drives the wrist joint to rotate relative to the support. The second driving mechanism comprises a second input shaft connected to the distal joint via at least four bevel gears, and the second driving mechanism drives the distal joint to rotate relative to the wrist joint. The robot arm is sealed and defines a conduit for allowing a plurality of pipes and cables to pass through.

Abstract: Disclosed are a substrate liquid processing apparatus and a substrate liquid processing method that performs a water-repelling process for a substrate with a water-repellent liquid, and a computer readable recording medium having a substrate liquid processing program. A first diluted water-repellent liquid is generated by mixing a first diluting liquid capable of diluting the water-repellent liquid without hydrolysis and the water-repellent liquid in a mixing tank, and a water-repelling process is performed for a substrate with the first diluted water-repellent liquid. A second diluting liquid capable of diluting the water-repellent liquid is supplied to a middle portion of a first supply path supplying the first diluted water-repellent liquid from the mixing tank.

Abstract: A device to form a coating film which can quickly coat a substrate of a follow-up lot after coating a preceding lot. The device is configured such that nozzles for a preceding lot and a following lot are integrated into a common movement mechanism and moved between an upper side of a liquid processing unit and a standby area. A coating method includes sucking air into the nozzle for the preceding lot to form an upper gas layer, sucking a solvent for the preceding lot in the standby area to form a thinner layer, and sucking air into the nozzle for the preceding lot to form a lower gas layer within the nozzle, and thus forming a state that a solvent layer is interposed between the upper gas layer and the lower gas layer.

Abstract: A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.

Abstract: A control unit heats a reaction pipe to a load temperature by controlling a temperature-raising heater 16, and then makes semiconductor wafers received in the reaction pipe. Next, the control unit heats the reaction pipe in which the semiconductor wafers are received to a film formation temperature by controlling the temperature-raising heater, and then forms thin films on the semiconductor wafers by supplying a film forming gas into the reaction pipe from a process gas introducing pipe. Also, the control unit sets the load temperature to a temperature higher than the film formation temperature.

Abstract: Systems, devices, and methods are provided for assembling polymer-forming molecular components such that highly-structured arrays of polymer strands, such as collagen fibrils, are formed without the need for cells. A polymer nanoloom is designed to control the self-assembly of monomers into fibrils and related tissue constructs including ligament, tendon, cartilage, and bone. A nanoloom system comprises a polymer printhead, a temperature controller, and a movable substrate for polymer printing. A polymer printhead contains one or more nanoreactors that can control the assembly of collagen fibrils or other polymers on a nanoscale. Methods are provided for temperature-driven, enzyme-driven, and cholesteric assembly of collagen or other polymers into two- or three-dimensional tissue constructs.

Abstract: A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.

Abstract: Provided are novel methods of filling gaps with a flowable dielectric material. According to various embodiments, the methods involve performing a surface treatment on the gap to enhance subsequent bottom up fill of the gap. In certain embodiments, the treatment involves exposing the surface to activated species, such as activated species of one or more of nitrogen, oxygen, and hydrogen. In certain embodiments, the treatment involves exposing the surface to a plasma generated from a mixture of nitrogen and oxygen. The treatment may enable uniform nucleation of the flowable dielectric film, reduce nucleation delay, increase deposition rate and enhance feature-to-feature fill height uniformity.

Abstract: Implementations and techniques for producing graphene are generally disclosed.

Abstract: A substrate treatment system includes a plurality of treatment apparatuses, a position adjustment apparatus adjusting a center position of the substrate, a substrate transfer apparatus transferring the substrate to the treatment apparatuses and the position adjustment apparatus, and a control unit controlling operations of the apparatuses. The substrate transfer apparatus includes an arm part curved along a peripheral edge portion of the substrate with a radius of curvature larger than a radius of the substrate, and a holding part projecting inward from the arm part and holding a rear surface of the substrate. The position adjustment apparatus includes a mounting table which holds a central portion of the rear surface of the substrate and is rotatable and horizontally movable. The control unit controls the mounting table such that the center position of the substrate held on the mounting table is aligned with a center position of the arm part.

Abstract: A method of processing a substrate by a substrate processing apparatus is disclosed. The substrate processing apparatus includes a processing container including a first space where a first processing gas or a second processing gas is supplied onto the substrate and a second space formed around the first space; a first exhaust unit configured to evacuate the first space; and a second exhaust unit configured to evacuate the second space. The method includes a first step of supplying the first processing gas into the first space; a second step of discharging the first processing gas from the first space; a third step of supplying the second processing gas into the first space; and a fourth step of discharging the second processing gas from the first space; wherein the pressure in the second space is adjusted by a pressure-adjusting gas supplied into the second space.

Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

Abstract: Provided is a substrate processing apparatus capable of suppressing accumulation of reaction products or decomposed matters on an inner wall of a nozzle and suppressing scattering of foreign substances in a process chamber. The substrate processing apparatus includes a process chamber, a heating unit, a source gas supply unit, a source gas nozzle, an exhaust unit, and a control unit configured to control at least the heating unit, the source gas supply unit and the exhaust unit. The source gas nozzle is disposed at a region in the process chamber, in which a first process gas is not decomposed even under a temperature in the process chamber higher than a pyrolysis temperature of the first process gas, and the control unit supplies the first process gas into the process chamber two or more times at different flow velocities to prevent the first process gas from being mixed.

Abstract: Disclosed is a substrate processing apparatus, including: a processing space to provide a space in which a substrate is to be processed; a heating member to heat the processing space; a gas supply member to supply at least first and second processing gases to the processing space; an exhaust member to exhaust an atmosphere in the processing space; and a control member to control at least the gas supply member and the exhaust member such that supply and exhaust of the first and second processing gases are alternately repeated a plurality of times so that the first and second processing gases are not mixed with each other in the processing space when forming a desired film on the substrate, and both the first and second processing gases are supplied to the processing space when coating a surface of an inner wall of the processing space with a desired film.

Abstract: To provide a process for producing a glass member provided with a sealing material layer, capable of favorably forming a sealing material layer even in a case where the entire glass substrate cannot be heated. A sealing material paste prepared by mixing a sealing material containing a sealing glass and a laser absorbent with an organic binder is applied to a sealing region of a glass substrate 2 in the form of a frame. The frame-form coating layer 8 of the sealing material paste is selectively heated by irradiation with a laser light 9 along the coating layer 8 to fire the sealing material while the organic binder in the coating layer 8 is burnt out to form a sealing material layer 7. Using such a sealing material layer 7, a space between two glass substrates is sealed.

Abstract: Systems, methods, and apparatus for depositing a tantalum layer on a wafer substrate are disclosed. In one aspect, a tantalum layer may be deposited on a surface of a wafer substrate using an ion-induced atomic layer deposition process with a tantalum precursor. A copper layer may be deposited on the tantalum layer.

Abstract: A substrate processing apparatus having various types of elements including a substrate carrier member for performing a substrate processing; and a control section in which a remote operation information transmitted from a remote control unit in a remote place through a communication network is provided only when there is an allow setting of a remote operation by a worker of the substrate processing apparatus with the safety of the remote operation work being confirmed, and the various types of elements are controlled based on the provided remote operation information.

Abstract: A multicomponent particle generating system may include a first nozzle constructed to generate at least one isolated particle, and a second nozzle arranged to generate a generally uninterrupted fluid jet without breaking up. The first and second nozzles are arranged to have the isolated particle traverse the fluid jet from one side to the other side so as to combine the particle with fluid of the second fluid jet, for providing a multicomponent particle. A collector is arranged on the other side of the fluid jet by which the isolated particles can be captured after collision with the fluid jet. The system includes a modulator, for modulating the second fluid jet so as to provide an undulated jet having thicker and thinner portions.

Abstract: Provided is a vertical heat treatment apparatus which performs a film-forming process for substrates by supplying a film-forming gas to a plurality of substrates loaded onto a substrate supporter. The substrate supporter is rotated around an inclination axis, and the apparatus includes: a plurality of main holders which are provided at every reception position of the substrates in the substrate supporter and respectively supports the peripheries of the substrates at positions separated from each other in the circumferential direction; and first and second auxiliary holders which are located to be separated from the main holders in the circumferential direction and whose tops are lower than those of the main holders. Each substrate alternates between a position supported by the first auxiliary holder and the main holders and a position supported by the second auxiliary holder and the main holders every rotation of the substrate supporter.

Abstract: Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber.

Abstract: Modularly integrated coating systems for coating a plurality of parts include a part handling system that transports parts between one or more modular ovens configured to modularly connect to one another to form a single curing station of selectable size for curing the plurality of parts, wherein the one or more modular ovens comprise a gas burner and a circulating fan, one or more modular support equipment platforms configured to stackably support the one or more modular ovens in the modularly integrated coating system, wherein the one or more modular support equipment platforms comprises, a water treatment system, a water heat generation system, an integrated lab kit module, and an integrated process control system, and a part coating system operationally integrated with the one or more modular ovens and the one or more modular support equipment platforms, wherein the part coating system coats the plurality of parts.

Abstract: A method for operating a gluing system (10) for gluing blanks for producing and/or packaging cigarettes or other smokable objects, in which the blanks are conveyed along glue valves (11) of the gluing system (10), in which case, in order to control and/or regulate the glue valves (11), a superordinate master controller (13) respectively transmits values of at least one control and/or regulation parameter to individual controllers (15) which are assigned to the glue valves (11), are subordinate to the master controller (13) and are each connected to the superordinate master controller (13) via a suitable data connection, the subordinate controller (15) using said values to control and/or regulate the glue valve (11) assigned to it.

Abstract: Environmentally-friendly, disposable, water submersible device that turns translucent in the presence of urine and displays a visual indicator for toilet training.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas.

Abstract: Systems, methods, and apparatus for depositing a protective layer on a wafer substrate are disclosed. In one aspect, a protective layer is deposited over a surface of a wafer substrate using a process configured to produce substantially less damage in the wafer substrate than a first plasma-assisted deposition process. The protective layer is less than about 100 Angstroms thick. A barrier layer is deposited over the protective layer using the first plasma-assisted deposition process.

Abstract: A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply nozzle including a pipe section extending perpendicular to a main surface of the substrate supported in the boat stored in the processing chamber, and a spray hole formed on the pipe section for spraying coolant gas to at least two of the multiple substrates, wherein the coolant gas supply nozzle is formed so that the cross sectional area of the pipe section in the area where the spray hole is formed is larger than the total opening area of the spray hole.

Abstract: In applying an application liquid onto a substrate and forming a line-like pattern, discharging of the application liquid is initiated from an inward position X0 which is inward from an originally intended start position X1, while keeping the amount of the gap between a nozzle and the substrate to a smaller value G0 than the height of the pattern. Following this, the nozzle moves toward outside the substrate while moving away from the substrate, and the reverses its movement direction at the pattern start position X1. Near a posterior end as well, the nozzle moves closer to the substrate while reducing the discharged quantity of the application liquid, and the movement direction is reversed while moving the nozzle away at a pattern end position X3.

Abstract: Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.

Abstract: Provided is a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.

Abstract: An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.

Abstract: A method of manufacturing a semiconductor device includes: carrying a substrate having an oxide film and a nitride film stacked thereon into a processing chamber; supporting and heating the substrate using a substrate support member provided in the processing chamber; adjusting flow rates of hydrogen-containing gas and nitrogen-containing gas in process gas using a gas flow rate controller to set a percentage R of the number of hydrogen atoms with respect to the total number of hydrogen atoms and nitrogen atoms contained in the process gas to be 0%<R?80%; supplying the process gas with the adjusted flow rates into the processing chamber using a gas supplying unit; exciting the process gas supplied into the processing chamber using a plasma generator; processing the substrate with the excited process gas; and carrying the substrate out of the processing chamber.

Abstract: A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with each of the temperature control units to sequentially cycle output of the units from a steady-state temperature output along the conveyance direction as a function of position of the leading and trailing edges of the substrates within the chamber relative to the temperature control units so as to reduce edge-induced temperature variances in the substrates.

Abstract: A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with the temperature control units and is configured to cycle output of the temperature control units from a steady-state temperature output as a function of the spatial position of the conveyed substrates within the chamber relative to the temperature control units so as to decrease temperature variances in the substrates caused by movement of the substrates through the chamber.

Abstract: In a method for forming a Cu film, a substrate is loaded in a processing chamber and a gaseous film-forming source material including monovalent amidinate copper and a gaseous reducing agent including a carboxylic acid are introduced into the processing chamber. Then, a Cu film is deposited on the substrate by reacting the film-forming source material and the reducing agent together on the substrate.

Abstract: Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates (1) in a process chamber (4), a step for supplying an oxygen-containing gas from the upstream side of the substrates (1) carried in the process chamber (4), a step for supplying a hydrogen-containing gas from at least one location corresponding to a position within the region where substrates (1) are placed in the process chamber (4), a step for oxidizing the substrates (1) by reacting the oxygen-containing gas with the hydrogen-containing gas in the process chamber (4), and a step for carrying the thus-processed substrates (1) out of the process chamber (4).

Abstract: A method for the production of dentures, in which for the production of a veneer (1) several layers (4) of at least one material mixture are applied on a support frame (2), on a spatially curved exterior surface (3) of the support frame (2), particularly in a computer-controlled fashion based on a digital model of the denture, with the layers (4) of the material mixture being applied as layers arranged spatially curved, with several layers (4) of the material mixture being applied directly following each other.

Abstract: Producing a servo pattern on a media involves rotating a master, and during a first revolution of the master, forming a first transition at a first radial position on the master, and forming a first transition at a second radial position. During a second revolution of the master, a second transition at the first radial position is formed, and a second transition at the second radial position is formed. By exposing individual servo burst transitions located at the first and second radial positions, in separate disk revolutions, only one of the magnetic transitions will inherit a particular deflection from a nominal radial position. If there are any mechanical disturbances, each magnetic transition will be randomly displaced from its nominal position, reducing the written-in run-out by ?n, where n is the number of magnetic transitions in a particular servo burst.

Abstract: A manufacturing method for semiconductor device includes: loading a wafer to a reaction chamber and placing the wafer on a support member; supplying process gas including source gas to a surface of the wafer, controlling a heater output and heating the wafer to a predetermined temperature while rotating the wafer at a first number of rotations, and thereby forming a film on a surface of the wafer; stopping supplying the source gas; decreasing a number of rotations of the wafer to a second number of rotations which enables an offset balance of the wafer to be maintained and stopping the heater output; and decreasing a temperature of the wafer while rotating the wafer at the second number of rotations.

Abstract: A film forming apparatus which forms a film on a substrate by utilizing a chemical solution, including: a correlation data creating unit which creates a correlation data that is related to the quality of a chemical solution, from data that is related to the properties of the chemical solution including at least one of data on storage temperature for the chemical solution to be loaded and data on pressure applied to the chemical solution to be loaded; and a determining unit which determines whether or not the chemical solution holds expected quality thereof on the bases of the correlation data.

Abstract: A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel.

Abstract: The present invention enables creating authenticable multi-ink luminescent continuous tone color halftone images offering means of verifying their authenticity. The invented luminescent color halftone image synthesizing techniques enable increasing the attractiveness and aesthetics of color images. The invention relies on daylight luminescent inks, color prediction models for daylight luminescent halftones, color gamuts of luminescent and non-luminescent inks, color separation into luminescent and non-luminescent ink layers, mapping of input gamuts into a luminescent target gamuts by gamut reduction and/or expansion strategies, and luminescent color halftone image generation. The basic authentication is performed by examining the excitation trace image of the synthesized luminescent color halftone image under an illuminant active within its excitation wavelength range.

Abstract: A coating apparatus includes an atomization chamber, a reaction chamber having an opening, an outputting chamber successively connected with each other. The coating apparatus also includes a gate, a concentration sensor and a control device. The atomization chamber atomizes a precursor. The reaction chamber receives a reactive gas for reacting with the atomized precursor. The gate is movable between a first position where the opening is closed by the gate and a second position where the opening is disengaged from the gate. The concentration sensor is located in the reaction chamber and senses a concentration of a product obtained in the reaction chamber. The control device is electrically connected with the concentration sensor, configured for comparing the concentration sensed by the concentration sensor with a prestored concentration value, and controlling the gate to move to the second position if the sensed product concentration is equal to the prestored concentration value.

Abstract: An assembly for creating a part from a spray powder foam and which includes either an overhead suspended or floor supported conveyor, from which are supported or suspended a plurality of spaced apart bodies. Each of the bodies exhibits a template surface corresponding to a part to be produced. One or more spray applicators are arranged in either fixed or numerically operated and movable fashion proximate the conveyor. Upon a selected body advancing to a specified location along the conveyor, the applicator issues a powder foam spray across the template surface. The template surface can be pre-heated to facilitate curing or the body can be advanced following spray application into an oven to facilitate part formation and setting.