Abstract: Apparatus for fabricating a phase-change material layer include a process chamber. A first source supplier including a liquid delivery system (LDS) structure is coupled between a tellurium (Te) source container and the process chamber. A second source supplier including a bubbler method structure is coupled between at least one metal organic (MO) source container and the process chamber. Methods are also provided.

Abstract: A film formation method includes a film formation process for forming an SiO2 film on a surface of a target object inside a process container by use of an Si source gas and an oxidizing agent, and an oxidation purge process for performing oxidation on films deposited inside the process container while exhausting gas from inside the process container after unloading the target object from the process container, wherein the film formation process and the oxidation purge process are alternately repeated a plurality of times without, interposed therebetween, a process for removing the films deposited inside the process container.

Abstract: A method for forming a laminated structure including an amorphous carbon film on an underlying layer includes forming an initial layer containing Si—C bonds on a surface of the underlying layer, by supplying an organic silicon gas onto the underlying layer; and forming the amorphous carbon film by thermal film formation on the underlying layer with the initial layer formed on the surface thereof, by supplying a film formation gas containing a hydrocarbon compound gas onto the underlying layer.

Abstract: Provided is a process of forming a silicon oxynitride film having concentration of hydrogen atoms below or equal to 9.9×1020 atoms/cm3 as measured by using secondary ion mass spectrometry (SIMS), using a plasma CVD device, which generates plasma by introducing microwaves into a process chamber by using a planar antenna having a plurality of apertures, by setting a pressure inside the process chamber within a range from 0.1 Pa to 6.7 Pa, and performing plasma CVD by using process gases including SiCl4 gas, nitrogen gas, and oxygen gas.

Abstract: Provided is a three-dimensional modeling apparatus including a supply mechanism, a deposition area, a variable mechanism, a discharge mechanism, and a control means. The supply mechanism supplies a powder material. In the deposition area,, the supplied powder material is deposited. The variable mechanism varies a volume of the deposition area per a predetermined layer thickness, and thus the powder material is deposited per the predetermined layer thickness in the deposition area. The discharge mechanism discharges liquid for forming a three-dimensional object to the deposited powder material, the liquid being capable of hardening the powder material. The control means causes the discharge mechanism to discharge the liquid to the powder material, to thereby form a main body being an object being as a target to be modeled and a frame body being an object to be formed in a periphery of the main body, of the three-dimensional object.

Abstract: Systems, apparatus and methods are provided to apply barrier and/or lubricant materials onto the interior surface of a container, such systems including a container having a chamber; a gas supply source for supplying monomer gas through a gas inlet duct having a portion extending into the chamber; a photolysis source and/or pyrolyzing surface for photolyzing and/or pyrolyzing at least a portion of the monomer gas to form a reactive gas comprising at least one reactive moiety; optionally a temperature controller for maintaining the interior surface of the container at a temperature which is less than the temperature of the pyrolyzing surface to facilitate deposition and polymerization of the reactive moiety on the interior surface of the container; and an outlet duct at the open end or a second end of the container for removing excess reactive gas from the chamber.

Abstract: A delivery assembly for depositing a gasket made of polymeric material within a seat having a predefined shape provided within a product, which comprises at least one working head provided with a nozzle for dispensing the polymeric material substantially in the liquid state. An increase in volume is associated with the polymeric material at the phase transition from liquid to solid; the expanded gasket, due to the increase in volume, defines by interference a stable coupling with the seat.

Abstract: A headset can include a cable structure connecting non-cable components such as jacks and headphones. The cable structure can include several legs connected at a bifurcation. An extrusion process can be used to manufacture legs of a multi-segment cable structure. As material is processed by an extruder, one or more system factors of the extruder can be dynamically adjusted to change a diameter of the resulting leg (e.g., to provide a smooth leg having a changing size). Once the leg is extruded, portions of the leg can be reformed to create undercuts used to connect the legs at a bifurcation region. In some cases, an extrusion process can be used to construct a jointly formed multi-leg cable structure having an integral bifurcation region and split.

Abstract: A method is disclosed for making a template for a superconducting coil on a former (25) from a sheet (23) of flexible biaxially-textured material having at least two joining edges, the surface texture of the sheet being defined by a plurality of grains, and the former having a substantially curved surface. The method comprises the steps of shaping the sheet so that each joining edge lies adjacent to another joining edge on application of the sheet to the former, each joining edge and its adjacent edge being a pair of edges, and so that the sheet is dimensioned to cover a part of the surface of the former and substantially to fit that part of the former; positioning the sheet on the former so that regions of the sheet either side of the pair of edges have substantially aligned grains; and forming a join between the pair of edges, the template thereby having a substantially continuous textured surface across the join.

Abstract: The present invention provides compositions and methods that combine the initial patterning capabilities of a direct cell printing system with the active patterning capabilities of magnetically labeled cells, such as cells labeled with superparamagnetic nanoparticles. The present invention allows for the biofabrication of a complex three-dimensional tissue scaffold comprising bioactive factors and magnetically labeled cells, which can be further manipulated after initial patterning, as well as monitored over time, and repositioned as desired, within the tissue engineering construct.

Abstract: It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.

Abstract: A method for fabricating an electronic device comprises providing a substrate, direct writing a functional material by a thermal spray on the substrate and removing a portion of the function material to form the electronic or sensory device.

Abstract: Provided is a film-forming method for performing a film-forming process on a surface of a target substrate to be processed in an evacuable processing chamber, a recessed portion being formed on the surface of the target substrate. The method includes a transition metal-containing film processing process in which a transition metal-containing film is formed by a heat treatment by using a source gas containing a transition metal; and a metal film forming process in which a metal film containing an element of the group VIII of the periodic table is formed.

Abstract: A method of forming a pattern on a turbomachine component includes adding material to selected surface regions of the turbomachine component, the material is arranged in a predetermined pattern.

Abstract: An apparatus for manufacturing a medication comprising an ejector unit adapted for ejecting a predefined amount of a drug having a liquid component to a solid carrier substrate. The ejector unit comprises a capillary and a tubular piezoelectric actuator surrounding at least a part of the capillary. The apparatus further comprises a control unit adapted for applying an electric signal to the piezoelectric actuator which, in response to the electric signal, is adapted to generate a compressional wave in the capillary for ejecting the predefined amount of the drug via an orifice of the capillary. Moreover, a method of manufacturing a medication is provided, the method comprising ejecting a predefined amount of a drug having a liquid component to a solid carrier substrate. Furthermore, a medication is provided comprising a solid carrier substrate, and a predefined amount of a drug ejected with a liquid component to the solid carrier substrate by an ejector unit.

Abstract: Exemplary coating devices and methods are disclosed. An exemplary coating device may include an atomizer for applying a spray jet of a coating means or material to a component, at least one directing air nozzle for outputting shaping or directing air in order to shape the spray jet, and a temperature-control device for controlling the temperature of the directing air. The coating device may further include a control unit which activates the temperature-control device as a function of at least one operating variable of the atomizer in order to set a predetermined directing air temperature.

Abstract: Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl4) and ammonia (NH3) as precursors. The TiCl4 is flowed into the reactor in temporally separated pulses. The NH3 can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl4 pulses, or the NH3 can be flowed continuously into the reactor while the TiCl4 is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Abstract: A microdeposition system includes a stage, a printhead carriage, and a controller. The stage holds a substrate. The printhead carriage includes N printhead modules, where N is an integer greater than one. Each of the N printhead modules includes a printhead and an alignment mechanism. The printhead includes a plurality of nozzles that deposit droplets of fluid manufacturing material onto the substrate while relative movement between the substrate and the printhead is along a first axis. The alignment mechanism adjusts the printhead with respect to the printhead module. The controller controls the alignment mechanisms of the N printhead modules to set effective nozzle spacing for the pluralities of nozzles to a uniform value. The effective nozzle spacing is defined as spacing between adjacent ones of the plurality of nozzles as projected onto a second axis perpendicular to the first axis.

Abstract: A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

Abstract: The present disclosure provides for a plasma system including a plasma device coupled to a power source, an ionizable media source and a precursor source. During operation, the ionizable media source provides ionizable media and the precursor ionizable media source provides one or more chemical species, photons at specific wavelengths, as well as containing various reactive functional groups and/or components to treat the workpiece surface by working in concert for synergetic selective tissue effects. The chemical species and the ionizable gas are mixed either upstream or midstream from an ignition point of the plasma device and once mixed, are ignited therein under application of electrical energy from the power source. As a result, a plasma effluent and photon source is formed, which carries the ignited plasma feedstock and resulting mixture of reactive species to a workpiece surface to perform a predetermined reaction.

Abstract: Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about ?600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

Abstract: The present invention relates to microfluidic systems and methods for monitoring or detecting a change in a characteristic of an input substance. Specifically, the invention relates to a model for in vitro pharmacokinetic study and other pharmaceutical applications, as well as other uses including computing, sensing, filtration, detoxification, production of chemicals and biomolecules, testing cell/tissue behavior, toxicology, drug metabolism, drug screening, drug discovery, and implantation into a subject. The present invention also relates to systems and methods of a microplasm functionalized surface patterning of a substrate. The present invention represents an improvement over existing plasma systems used to modify the surface of a substrate, as the present invention creates surface patterning without the use of a mask, stamp or a chemical treatment.

Abstract: A method for using a film formation apparatus for a semiconductor process forms a first atmosphere inside an upstream gas passage between a gas supply source of a halogen acidic gas and a flow rate controller. The first atmosphere is set for the halogen acidic gas to have an average molecular weight of 20 or more and 23 or less. Further, the using method supplies the halogen acidic gas from the gas supply source through the upstream gas passage having the first atmosphere thus formed and the flow rate controller, thereby supplying a cleaning gas containing the halogen acidic gas into a reaction chamber of the film formation apparatus. A by-product film deposited on an inner surface of the reaction chamber is etched and removed by use of the cleaning gas thus supplied.

Abstract: The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder (2) between a reaction chamber (8) and a transfer chamber (9) lying on the under side thereof. Moreover, it has such structure that the exhaust conductance of the reaction chamber (8) becomes large when the substrate holder (2) lies in the transfer chamber. Upon the conditioning, the substrate holder (2) is moved to the transfer chamber (9) to allow diffusing species to spread widely, thereby effectively performing the conditioning for both reaction chamber (8) and transfer chamber (9) in the vacuum chamber (1).

Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.

Abstract: An object is to provide a plasma processing apparatus and a method for controlling a substrate attraction force in a plasma processing apparatus by which the substrate attraction force is controlled to be constant without being influenced by the number of processed substrates.

Abstract: Printing one or more layers using toner and/or laminates to form one or more multi-channeled layers, with a particular pattern, including forming a desired image, for example, electrographically, on a receiver member. The multi layered channel printing apparatus and related method and print incorporates one or more static layers, and one or more moveable layers that allow a fluid to move through the micro channels via an opening or through a direct fill. It also incorporates particles in the channels to act as a packing material for separation of components of samples. The packing material can either be applied directly or using the electrographic printing process. An optional capping layer or substrate may then be applied.

Abstract: Provided are a method of manufacturing a semiconductor device and a substrate processing apparatus, which can improve the surface roughness of an amorphous silicon film. The method of manufacturing a semiconductor device comprises: in a process of forming an amorphous silicon film on a substrate, setting, in an initial stage of the process, an in-furnace pressure to a first pressure to supply SiH4; and setting, in a stage after the initial stage, the in-furnace pressure to a second pressure lower than the first pressure to supply SiH4.

Abstract: A system and method for photo-grafting a coating polymer onto the surface of a medical device are provided. The system comprises a plurality of stations including a novel grafting station. The system and method of the invention are both time- and resource-efficient. The system includes several stations, each station including a dipping tank. The system allows for the automated, semi-automated, or manual dipping of medical devices into the dipping tanks in a specified order, as desired, wherein at least one of the stations is a grafting station for photo-grafting the coating polymer onto the surface of the medical device. The system is modular, which allows for modification of the process as required, depending on the needs of the user. The system may comprise stations for incorporating an antimicrobial agent into the coating, and/or for rendering the coating lubricious.

Abstract: A system and method for photo-grafting a coating polymer onto the surface of a medical device are provided. The system comprises a plurality of stations including a novel grafting station. The system and method of the invention are both time- and resource-efficient. The system includes several stations, each station including a dipping tank. The system allows for the automated, semi-automated, or manual dipping of medical devices into the dipping tanks in a specified order, as desired, wherein at least one of the stations is a grafting station for photo-grafting the coating polymer onto the surface of the medical device. The system is modular, which allows for modification of the process as required, depending on the needs of the user. The system may comprise stations for incorporating an antimicrobial agent into the coating, and/or for rendering the coating lubricious.

Abstract: A towel dispenser which sprays portions of a material web pulled off from a supply roll with a disinfectant. A disinfectant supply bottle is arranged partially inside a core of the supply roll, and its liquid outlet is connected to the inlet of a diaphragm pump, which feeds into a nozzle pipe. To measure the residual material web remaining on the supply roll, an angular velocity transmitter is used which comprises a stationary reflective light barrier and a line pattern applied to the inside of the core of the supply roller.

Abstract: An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere.

Abstract: An apparatus and corresponding method are disclosed that uses one or more optical fibers in a susceptor that monitor radiation emitted by the backside of the susceptor. The optical fibers are filtered and converted into an electrical signal. A control system is used to maintain a constant wafer temperature by keeping the electrical signal constant during the deposition cycle. This overcomes problems caused by varying wafer temperature during non-selective epitaxial and poly-silicon growth on patterned wafers at low temperatures and reduced pressure.

Abstract: A maintenance engineer can analyze an abnormal state with less difficulty in a rapid and correct manner independent of his/her skill. A substrate processing system comprises: a substrate processing apparatus configured to operate according to a recipe defining a process sequence and process conditions, and a group managing apparatus connected to the substrate processing apparatus. The group managing apparatus comprises an analysis support unit. The analysis support unit is configured to extract check item information relating to both abnormal state information for identifying an abnormal state occurring when the recipe is executed and apparatus type information for identifying the type of the substrate processing apparatus at which the abnormal state occurs, and to prepare a check item table comprising the extracted check item information.

Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to a substrate processing chamber in which the substrate is accommodated; a second process of removing the source gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; a third process of modifying the predetermined element-containing film formed in the first process by supplying a modification gas that reacts with the predetermined element to the substrate processing chamber; a fourth process of removing the modification gas remaining in the substrate processing chamber by supplying an inert gas to the substrate processing chamber; and a filling process of filling an inert gas in a gas tank connected to the substrate processing chamber.

Abstract: A fluid pump control that allows for both flow control and pressure control to allow greater flexibility in applying architectural coatings.

Abstract: Systems and methods for preparing films using sequential ion implantation, and films formed using same, are provided herein. A structure prepared using ion implantation may include a substrate; an embedded structure having pre-selected characteristics; and a film within or adjacent to the embedded structure and including ions having a perturbed arrangement arising from the presence of the embedded structure. The perturbed arrangement may include the ions being covalently bonded to each other, to the embedded structure, or to the substrate, whereas the ions instead may be free to diffuse through the substrate in the absence of the embedded structure. The embedded structure may inhibit or impede the ions from diffusing through the substrate, such that the ions instead covalently bond to each other, to the embedded structure, or to the substrate. The film may include, for example, diamond-like carbon, graphene, or SiC having a pre-selected phase.

Abstract: A method for vapor-phase growth of a thin film by introducing into a reaction chamber a raw material gas wherein a dilute impurity gas, having a mixture of impurity gas of which the flow-rate is controlled by a first flow-rate controlling mechanism and diluting gas of which the flow-rate is controlled by a second flow-rate controlling mechanism, of which mixture the flow-rate is controlled by a third flow-rate controlling mechanism is mixed with a main gas of which the flow-rate is controlled by a fourth flow-rate controlling mechanism, and vapor-phase growth is carried out by supplying the raw material gas to the reaction chamber while changing continuously and simultaneously with arithmetic control the flow-rates of the gases flowing through said first, second and third flow-rate controlling mechanisms so that the resistivity distribution is controlled and a required resistivity profile is achieved in the thickness direction of the thin film.

Abstract: When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.

Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.

Abstract: A method for forming an outer electrode capable of reducing a tact time when electrode paste is applied to end surfaces of electronic components a plurality of times. A paste tank 4 having a squeegee blade that is vertically slidable is disposed on a flat board 1 having an area being a plurality of times as large as that of a holding plate in a longitudinal direction of the flat board. A paste film is spread on the flat board by moving the flat board 1 by a length corresponding to the length of one holding plate while a predetermined gap is maintained between the squeegee blade and the flat board. The electrode paste is applied to first end surfaces of electronic components C held by the holding plate H by dipping the first end surfaces of the electronic components C in this paste film. The electrode paste is applied to the first end surfaces of the electronic components a plurality of times by repeating the spreading step and the applying step.

Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device. The substrate processing apparatus includes a reaction vessel configured to process a substrate, a heater configured to heat an inside of the reaction vessel, a gas supply line configured to supply gas into the reaction vessel, a first valve installed at the gas supply line, a flow rate controller installed at the gas supply line, a main exhaust line configured to exhaust the inside of the reaction vessel, a second valve installed at the main exhaust line, a slow exhaust line installed at the main exhaust line, a third valve installed at the slow exhaust line, a throttle part installed at the slow exhaust line, a vacuum pump installed at the main exhaust line, and a controller configured to control the valves and the flow rate controller.

Abstract: The present invention provides a process for forming a capping layer on a conducting interconnect for a semiconductor device, the process comprising: providing a substrate comprising one or more conductors in a dielectric layer, the conductors having an oxide layer at their surface; exposing the surface of the substrate to a vapour of ?-diketone or a ?-ketoimine; and depositing a capping layer on the surface of at least some of the one or more conductors. The present invention further provides an apparatus for carrying out this method.

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract: An exemplary painting robot and corresponding operating methods for the same are disclosed. The robot may be configured to paint motor vehicle bodies on an outer surface and an inner surface with an atomizer that is guided by the painting robot. According to the exemplary illustrations, the painting robot is suitable for painting the outer surfaces and for painting the inner surfaces of the motor vehicle bodies.

Abstract: The invention provides a lithographic method referred to as “dip pen” nanolithography (DPN). DPN utilizes a scanning probe microscope (SPM) tip (e.g., an atomic force microscope (AFM) tip) as a “pen,” a solid-state substrate (e.g., gold) as “paper,” and molecules with a chemical affinity for the solid-state substrate as “ink.” Capillary transport of molecules from the SPM tip to the solid substrate is used in DPN to directly write patterns consisting of a relatively small collection of molecules in submicrometer dimensions, making DPN useful in the fabrication of a variety of microscale and nanoscale devices. The invention also provides substrates patterned by DPN, including submicrometer combinatorial arrays, and kits, devices and software for performing DPN. The invention further provides a method of performing AFM imaging in air.

Abstract: A liquid processing apparatus processes an object to be processed W including a body part Wi and a plurality of projecting-shape parts Wm disposed on the body part Wi, with an inorganic film and a different film being laminated to each other. The liquid processing apparatus comprises: a support part 50 configured to support the body part Wi; a hydrophobic-liquid supply mechanism 30 configured to supply a hydrophobic liquid to the object to be processed W; and a rinse-liquid supply part 22 configured to supply a rinse liquid to the object to be processed W to which the hydrophobic liquid has been supplied. The hydrophobic-liquid supply mechanism 30 includes: a first hydrophobic-liquid supply part 32 configured to supply a first hydrophobic liquid for making hydrophobic the inorganic film; and a second hydrophobic-liquid supply part 37 configured to supply a second hydrophobic liquid for making hydrophobic the different film.

Abstract: Novel methods and apparatus for thin film layer-by-layer depositions on substrates is provided. More specifically, provided herein is a layer-by-layer deposition of polymers and colloids on substrates of varying sizes and shapes including, for example, flat solid substrates, powder surfaces, flat porous sheets, and micro-porous pipes. Still more specifically, this disclosure relates to an apparatus that can be used to automate the deposition of ultra-thin layers on various substrates of varying sizes and shapes using layer-by-layer deposition and a method for doing the same.

Abstract: It is an object of the invention to provide a vacuum processing apparatus that enables setting a timing interval between self-cleaning procedures simply and so as to have general-use, enables significantly lengthening this timing interval, and improves the production efficiency. In a plasma CVD apparatus (100) that carries out self-cleaning procedure by feeding a cleaning gas into a film deposition chamber (1) in which film deposition processing is carried out on a substrate (4), the timing interval between self-cleaning procedures is set in a range in which a film deposition operating time ratio (Ps) is converged with respect to an increase in a film deposition process amount, where the film deposition operating time ratio (Ps) is represented by the proportion of a film deposition-related operating time (Tt) in the sum of the film deposition-related operating time (Tt) and a cleaning-related operating time (Tc).

Abstract: The present invention provides automated, computer-controlled apparatus and methods for coating an object comprising iron with aluminum or an alloy comprising aluminum or another alloy or metal suitable for application by use of heating with an induction coil or air or both. A computer system monitors and controls one or more heating systems to heat aluminum to a desired temperature and determine when an article is to be coated or sprayed with liquid aluminum from one or more atomizing spray nozzles connected directly or indirectly to a container having liquid aluminum therein. Other computerized control methods and sensors can be implemented in order to effectively heat the air or gas which is to be used to either melt or assist in the propelling of the aluminum or alloy which is to be used for coating.