Abstract: Systems and methods for forming components with thermal barrier coatings are provided. In this regard, a representative method includes: providing a component having a first side and an opposing second side; and using a preformed mask to obstruct vapors from being deposited on the second side of the component while moving the component relative to the vapors such that the vapors form a thermal barrier coating on the first side of the component.

Abstract: Apparatus and methods for shielding a feature projecting from a first area on a substrate to a plasma while simultaneously removing extraneous material from a different area on the substrate with the plasma. The apparatus includes at least one concavity positioned and dimensioned to receive the feature such that the feature is shielded from the plasma. The apparatus further includes a window through which the plasma removes the extraneous material. The method generally includes removing the extraneous material while shielding the feature against plasma exposure.

Abstract: It is an apparatus for semiconductor device production in which a feed gas is fed into a chamber having a semiconductor wafer placed therein to deposit a thin film on the surface of the semiconductor wafer based on a catalyzed chemical reaction. It comprises the chamber for placing a semiconductor wafer therein, a feed gas supply means with which a feed gas which is a raw material for the thin film is sent into the chamber, and a gas-blowing means which has a gas-blowing opening through which the feed gas sent from the feed gas supply means is blown against the surface of the semiconductor wafer placed in the chamber. The gas-blowing means changes in the state of the gas-blowing opening according to the feed gas blowing position to thereby regulate the amount of the feed gas to be blown.

Abstract: A method for manufacturing components is provided. The method includes coupling a drive assembly to a positioning assembly, coupling a plurality of components to be manufactured to a plurality of fixtures, securing the plurality of fixtures to the drive assembly wherein each fixture is configured to receive a component to be manufactured, and repositioning the plurality of components simultaneously using the positioning assembly to facilitate manufacturing of the plurality of components, wherein the components are configured to be oscillated in a first plane of rotation via the drive assembly and rotated through a second plane of rotation via the plurality of fixtures.

Abstract: A method of forming an alignment layer with a multi-domain is provided. The alignment layer is formed on a substrate. A mask having a transmission part and a shielding part is aligned over the substrate. First and second alignment directions in the alignment layer are formed by irradiating an ion beam onto the substrate at different irradiation angles. Using the aforementioned ion-beam irradiation process eliminates the need for multiple rubbing processes to create the multi-domain alignment layer.

Abstract: A film depositing apparatus comprises: a vacuum chamber; a rotatable drum that is provided within the chamber, that is longer than the substrate in a direction of its width perpendicular to the direction of transport of the substrate, and around which the substrate is wrapped in a specified surface region; a film depositing unit provided within the chamber and forming a film in a specified range of a surface of the substrate as it is wrapped around the drum; and a mask provided in a face-to-face relationship with the drum isolating a first region which is an area of the drum around which the substrate is not wrapped and a second region which is within a range of the substrate where the film is to be formed by the film depositing unit and which is most downstream in a direction in which the drum rotates.

Abstract: A backside coating prevention device adapted for a coating chamber for coating plate-shaped substrates, said coating chamber comprising a plurality of walls, a coating material source for dispensing coating material into the coating chamber, a substrate support, a front side of the substrate support facing the coating material source, the substrate support being adapted for supporting on the front side one or more plate-shaped substrates each having a substrate front side and thereby defining a substrate front plane, wherein said backside coating prevention device comprises two or more screens, the screens being provided at least two of the walls of the coating chamber, each screen having a protruding member protruding from the respective wall.

Abstract: A mask for depositing a thin film of a flat panel display and a method of fabricating the mask are disclosed. Embodiments of the mask can improve position accuracy and prevent problems caused by thermal expansion of the mask by attaching a reinforcing member and mask pattern units arranged on openings of the reinforcing member using a buffer member. The mask includes a reinforcing member including a plurality of first openings; mask pattern units arranged corresponding to the first openings of the reinforcing member and supported by the reinforcing member; and a buffer member including a plurality of second openings corresponding to the first openings of the reinforcing member, and attaching the reinforcing member to the mask pattern units to support the reinforcing member and the mask pattern units.

Abstract: Systems and methods of coatings for semiconductor processing equipment. A semiconductor substrate processing system includes an enclosure for containing a semiconductor processing gas. The enclosure has an interior surface that is at least partially coated with a Silicon carbide coating to a desired thickness. The enclosure may be inlet piping for conveying the semiconductor processing gas to a processing chamber for processing the semiconductor substrate, a processing chamber and/or an exhaust flume for conveying used semiconductor processing gas away from a processing chamber. The interior surface may include additional coatings comprising Silicon and/or diamond like Carbon.

Abstract: Accordingly, systems and methods of thin diamond like coatings for semiconductor processing equipment. A semiconductor substrate processing system includes an enclosure for containing a semiconductor processing gas. The enclosure has an interior surface that is at least partially coated with a diamond-like Carbon coating to a desired thickness that is less than about 0.5 ?m.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: The invention provides a chuck plate assembly that includes a shadow mask formed with a predetermined pattern; a shadow mask frame holding the shadow mask and having heat-radiating and cooling functions; a substrate aligned with the shadow mask and onto which deposition materials from a deposition source are deposited; and a chuck plate, attaching the substrate to the shadow mask, that includes a refrigerant circulating duct. The temperature of the substrate is optimized in consideration of the temperature of the shadow mask so that an alignment error due to thermal deformation is minimized. That is, the temperature of the shadow mask itself is prevented from rising, and thereby prevents deformation of the shadow mask due to thermal expansion, which improves the precision of a substrate pattern position.

Abstract: A deposition material supplying module includes a canister configured to define a storage space in which a deposition material is stored, a material flow controller provided with at least one groove receiving the deposition material supplied from the canister and adapted to rotate, and a carrier gas supplying unit configured to supply carrier gas to the material flow controller. The deposition material is filled in the groove and a fixed amount of the deposition material is supplied into the process chamber using the deposition material flow controller. Therefore, it is easy to control an amount of the deposition material supplied to the process chamber and the reliability on the fixed-quantity supply can be improved.

Abstract: When the ratio of a guest material to a host material is extremely small, it is difficult to maintain, with good accuracy, the ratio of the guest material to be vapor-deposited on the work surface and the distribution state of the guest material. The vacuum vapor deposition apparatus and method includes providing a shielding member, positioned between a first vapor deposition source and a substrate to be coated so that the vapor deposition amount of the guest material on the substrate surface is significantly less than the vapor deposition amount of the host material. A shielding member drive mechanism rotates the shielding member about a first axis while rotating the shielding member about a second axis, which is spaced from and parallel to the first axis.

Abstract: The invention relates to an apparatus and a method for the manufacture of light emitting elements comprising organic compounds. These elements are provided with organic light emitting diodes and can be displays or also lighting elements having such light emitting diodes. It is the object of the invention to reduce the effort for the manufacture with respect to the costs and to the time effort. In this connection, already pretreated substrates are further processed in a continuous vacuum coating plant. An electrode is formed on such a substrate and at least one layer of an organic compound which is suitable for the emission of light should be deposited over said electrode. The deposition should take place with different angular distributions. Shadow masks are used for this purpose.

Abstract: A process kit for a semiconductor processing chamber is provided. In one embodiment, a process kit includes a notched deposition ring. In another embodiment, a process kit includes a cover ring configured to engage the notched deposition ring. In another embodiment, a process kit includes an annular deposition ring body having inner, outer, upper and bottom walls. A trough is recessed into an upper surface of the body between the upper and inner walls. A recessed surface is formed on a lower surface of the body between the bottom and inner walls. A notch extends inward from the body to catch deposition material passing through a notch of the substrate being processed.

Abstract: A film formation method is provided for masking a part of a surface of an object and subsequently forming a film, by a chemical vapor deposition method, on a surface on which a film should be formed that is an exposed part of the surface of the object. The film formation method includes, upon film formation in a reaction chamber, masking the object by using a mask having a gas path formed therewithin and vents connecting the gas path with an outer surface of the mask, and controlling concentration distribution of raw material substances in the reaction chamber so that a film formation rate in the surface on which a film should be formed is constant by discharging or attenuating raw material gases, using the gas path within the mask, supplied to a surface which is covered with the mask and on which no film is formed.

Abstract: A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

Abstract: A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

Abstract: Thermal processing system and method for forming an oxide layer on substrates. The thermal processing system has a gas injector with first and second fluid lumens confining first and second process gases, such an molecular hydrogen and molecular oxygen, from each other and another fluid lumen that receives the process gases from the first and second fluid lumens. The first and second process gases combine and react in this fluid lumen to form a reaction product. The reaction product is injected from this fluid lumen into a process chamber of the thermal processing system, where substrates are exposed to the reaction product resulting in formation of an oxide layer.

Abstract: The invention is an apparatus and method for producing an electronic component comprising at least one active organic layer. The invention discloses for the first time how an organic component can be produced in a process designed entirely as a roll-to-roll process. The advantage of the continuous production method described here is, further, that the active regions of the active semiconductor layer are not exposed to unprotected solvents and/or solvent vapors at any time during the production process. This makes it possible to produce a high-quality organic component.

Abstract: A plasma processing system includes a source of plasma, a substrate and a shutter positioned in close proximity to the substrate. The substrate/shutter relative disposition is changed for precise control of substrate/plasma interaction. This way, the substrate interacts only with a fully established, stable plasma for short times required for nanoscale processing of materials. The shutter includes an opening of a predetermined width, and preferably is patterned to form an array of slits with dimensions that are smaller than the Debye screening length. This enables control of the substrate/plasma interaction time while avoiding the ion bombardment of the substrate in an undesirable fashion. The relative disposition between the shutter and the substrate can be made either by moving the shutter or by moving the substrate.

Abstract: A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.

Abstract: A vacuum deposition apparatus is used for deposit evaporated substance from evaporation sources (6a and 6b) on the desired position of a flexible substrate (1). While the flexible substrate (1) is carried using rollers in a vacuum, shutters (8a and 8b) are opened and closed to control the movement of the evaporated substance via openings. A film having a desired shape of pattern is formed on the flexible substrate (1) with higher controllability.

Abstract: An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).

Abstract: A shadow mask for uniformly forming an organic luminescent layer of an organic electroluminescent device is disclosed. The shadow mask includes a plurality of striped slots aligned in one direction, the striped slots having a plurality of inclined surfaces formed on each side thereof. Due to a step difference, the inclined surfaces prevent shadows from occurring, thereby uniformly forming the organic luminescent layer.

Abstract: A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and gradually moves the mask plate according to the film thickness control value acquired by the film thickness control device, enabling the mask plate to mask film zones on the said substrate to achieve the film thickness of a design objective. When the required zones of deposition are masked, the deposition of a particular film layer is completed.

Abstract: A system for of aligning a mask to a substrate comprising: a fixture for holding the mask and the substrate in fixed positions relative to each other; means for holding the substrate, the means for holding the substrate protruding through openings in a table and the fixture, the means for holding fixedly mounted on a stage, the stage moveable in first and second directions and rotatable about an axis relative to the table; means for affixing the fixture containing the mask and the substrate to the table; means for controlling the means for temporarily affixing so as to generate a uniform force around a perimeter of the fixture to effectuate the temporarily affixing; means for aligning the mask to the substrate, the means for aligning controlling movement of the stage in the first and second directions and rotation about the axis; and means for fastening the fixture together.

Abstract: A method for hard-material coating or heat treatment of the blade airfoils of blisks for gas turbines provides for partial heat-insulation and cooling of the other blisk parts during the respective process to prevent their properties from being changed by the high temperatures. The apparatus required for this method comprises two or more cooling plates (5 to 7) which are thermally insulated on their outer surfaces and include supporting flanges (20) which heat-conductively locate the blade platforms (3) of the blisks (1). Radially extending cooling medium channels (16) are provided in the cooling plates connected to a cooling medium source to continually apply cooling medium to the inner surfaces of the supporting flanges and the blade platforms.

Abstract: A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

Abstract: A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists in controlling the growth and stoichiometry of the film. The method allows for the fabrication of ultrathin films such as electrolyte films and dielectric films.

Abstract: In film-forming devices and plasma-processing devices, filmy matter adheres to the surfaces of the inner parts and it peels to cause dust and particles in the devices. In the devices, the dust and particles contaminate the objects for film formation thereon or the objects to be processed with plasma. For preventing the objects from being contaminated with them, the inner parts of the devices must be frequently exchanged every time when they have received any minor filmy matter thereon, and this lowers the productivity in the devices. When a modified glass part of which the surface is modified with spherical or bell-like island projections having a width and a height of from a few ?m to a few hundreds ?m is used in a film-forming device and in a plasma-processing device, then its ability to hold the filmy substance having adhered thereto is good and its resistance to plasma is also good.

Abstract: A system for processing a semiconductor substrate is provided. The system includes a mainframe having a plurality of modules attached thereto. The modules include processing modules, storage modules, and transport mechanisms. The processing modules may include combinatorial processing modules and conventional processing modules, such as surface preparation, thermal treatment, etch and deposition modules. In one embodiment, at least one of the modules stores multiple masks. The multiple masks enable in-situ variation of spatial location and geometry across a sequence of processes and/or multiple layers of a substrate to be processed in another one of the modules. A method for processing a substrate is also provided.

Abstract: Substrates, such as spectacle lenses for example, may be provided with a coating which is not uniform by way of screens. The screens are aperture rings, arranged concentric to a symmetry axis of the vaporising crucible in a vacuum coating unit, by way of a screen holder. The spectacle lenses are disposed on a substrate holder also in circles about the symmetry axis. The shadows cast by the aperture rings cover but a partial region of the spectacles lenses such that those regions of the lenses receive less coating than in the unshaded free regions. The aperture rings are exchangeable in order to match the coating process to the customer requirements. Furthermore, the separation of the subtrate holder from the aperture rings is adjustable.

Abstract: The present invention presents an adaptable processing element for use in a processing system having multiple configurations. The processing element comprises a primary component and at least one detachable component, wherein the at least one detachable component can be retained for one configuration and removed for another configuration. For example, the detachable component may include a punch-out or knock-out located on a right-hand side and a left-hand side of a processing element in order to permit access of a gas supply line to a processing chamber for either a right-hand orientation or a left-hand orientation, respectively. Additionally, for example, the detachable component, whether retained or removed, can permit flexible use with different size processing chambers.

Abstract: A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the plane of the wafer. The magnetic dipole ring may include 8 or more arc-shaped magnet segments arranged in a circle with the respective magnetization directions precessing by 720° around the ring. The dipole ring is preferably encapsulated in a vacuum-tight stainless steel carrier and placed inside the vacuum chamber. The carrier may be detachably mounted on a cover ring, on the shield, or on the interior of the chamber sidewall. In another embodiment, the magnet is a magnetic disk placed under the wafer. Such auxiliary magnets allow the magnetron sputter deposition of aligned magnetic layers.

Abstract: An evaporation apparatus includes a deposition unit that deposits a substance to be evaporated from an evaporation source on a substrate, a vacuum tank that defines a space for placing the evaporation source and the substrate and maintains a vacuum state in the space, and an evaporated substance adhering unit that is provided in at least a portion of a wall in the vacuum tank and has a plurality of protrusions protruding in a direction toward the evaporation source at an angle relative to a direction normal to the wall, and to which the evaporated substance is adhered.

Abstract: There is provided a method and apparatus for processing an organosiloxane film, which allow an inter-level insulating film with a low dielectric constant to be formed at a low heat process temperature. A semiconductor (10) with a coating film formed thereon is loaded into a reaction tube (2) of a heat-processing apparatus (1). Then, the interior of the reaction tube (2) is stabilized at a predetermined pressure, and hydrogen is supplied into an inner tube (3) through an acidic gas feed line (13), to heat the coating film under an acidic atmosphere. Then, the interior of the reaction tube (2) is heated up to a predetermined temperature, while heating the coating film under an acidic atmosphere. Then, gas inside the reaction tube (2) is exhausted, and ammonia is supplied into the inner tube (3) through an alkaline gas feed line (14), to heat the coating film under an alkaline atmosphere.

Abstract: A substrate and a mask are closely adhered to each other with a high alignment accuracy. While the both ends of the substrate are sandwiched between a substrate supporting member and a planar member, the center portion of the substrate is bent in a convex fashion by means of a substrate pressing member. On a mask pedestal, the mask is also bent in a convex fashion with respect to the substrate by means of a mask pressing member. After alignment in the plane direction between the mask and the substrate is performed, the mask and the substrate are made to approach each other and the convex portion is closely adhered to each other at an initial stage, and then the respective whole surfaces of the mask and the substrate are closely adhered to each other, while the substrate pressing member and the mask pressing member are moved backward. The mask pressing member may be omitted.

Abstract: A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers. The gas injector is positioned between the outer tube and the wafer boat. Similarly, the uniform gas injection apparatus is positioned between the outer tube and the wafer boat. Gas injected into the uniform gas injection apparatus is uniformly distributed throughout the entire deposition furnace. To form a silicon nitride layer on each wafer, a silicon-containing gas is passed into the deposition furnace via the gas injector and a nitrogen-mixed carrier gas is passed into the deposition furnace via the uniform gas injection apparatus.

Abstract: Embodiments of the invention relate to a substrate processing chamber. In one embodiment a substrate processing chamber includes a chamber body containing a substrate support, a lid assembly comprising an expanding channel extending from a central portion of the lid assembly to a peripheral portion of the lid assembly and positioned to substantially cover the substrate support, and one or more valves adapted to provide one or more reactants into the chamber body. The valves comprising a valve body having at least two ports comprising a purge inlet and an outlet, a valve seat surrounding one of the ports, an annular groove formed around the valve seat coupling the purge inlet and the outlet, and a diaphragm assembly. The diaphragm assembly comprises a diaphragm movable to contact the valve seat, a piston coupled to the diaphragm, and a cylinder to house the piston.

Abstract: A substrate processing apparatus include a spin chuck capable of holding a semiconductor wafer in a horizontal position, a drive motor for driving the spin chuck for rotation, and a processing vessel accommodating the spin chuck and the drive motor 50 therein and capable of sealing a supercritical fluid, such as supercritical carbon dioxide, therein. The supercritical fluid flows along the upper and the lower surface of the semiconductor wafer at velocities relative to the upper and the lower surface of the semiconductor wafer as the spin chuck holding the semiconductor wafer in a horizontal position rotates to remove contaminants including particles and adhering to the semiconductor wafer from the semiconductor wafer.

Abstract: The present invention presents an improved bellows shield for a plasma processing system, wherein the design and fabrication of the bellows shield coupled to a substrate holder electrode advantageously provides protection of a bellows with substantially minimal erosion of the bellows shield.

Abstract: Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.

Abstract: A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists in controlling the growth and stoichiometry of the film. The method allows for the fabrication of ultrathin films such as electrolyte films and dielectric films.

Abstract: A variable adaptive mask is provided that can be dynamically modified in situ in a physical vapor deposition process. The mask comprises a fixed mask portion, a plurality of channels extending through the fixed mask portion, a control mechanism for controlling throughput of a vaporized target material through the channels, and a mechanism to mount the mask in a fixed position relative to a solid target material and a substrate. In one embodiment, a magnetic control mechanism is provided to control throughput of the vaporized target material through the channels. In another embodiment, a thermal control mechanism is provided to control throughput of a vaporized target material through the channels. Methods of controlling a physical vapor deposition process using the adaptive mask are also disclosed.

Abstract: Apparatus for supporting a substrate such as a semiconductor wafer in a process chamber to improve power coupling through the substrate. The apparatus contains a pedestal assembly and a pedestal cover positioned over the top surface of and circumscribing the pedestal assembly for electrically isolating the pedestal assembly. The pedestal cover reduces conductive film growth in the wafer process region. As such, RF wafer biasing power from the pedestal assembly remains coupled through the substrate during processing.

Abstract: A vapor deposition shadow mask system includes a number of series connected vacuum vessels each having a material deposition source and shadow mask positioned therein. A substrate is translated along a path that has a longitudinal axis that extends through the vacuum vessels. Centers of shadow masks in first and second vacuum vessels are offset laterally on opposite sides of the longitudinal axis. The system is operative for depositing material on a second area of the substrate via the material deposition source and shadow mask in the second vacuum vessel in a manner that overlaps a portion of the material deposited on a first, adjacent area of the substrate via the material deposition source and shadow mask in the first vacuum vessel.

Abstract: Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising-a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

Abstract: Scanning localized evaporation and deposition of an evaporant on a substrate utilizes a mask assembly comprised of a series of mask elements with openings thereon and spaced apart in a stack. The openings are aligned so as to direct the evaporant therethrough onto the substrate. The mask elements are heated and the stack may include a movable shutter element to block openings in adjacent mask elements. The evaporant streams are usually vertical but some may be oblique to the substrate, and they may be of different materials.