Abstract: Aspects of the present invention are directed to a mask holder for especially large-surface substrates, especially for the micro-structuring of organic electroluminescent materials (OLED) for the production of OLED screens, displays and the like by means of vacuum-coating processes, with a substrate carrier for receiving the substrate during coating processes, with the substrate carrier comprising one or more magnets and the mask features a frame of magnetic material, such that the frame of the mask is held by means of the magnets of the substrate carrier relative to the substrate to be coated.

Abstract: There are provided an evaporation mask with which an evaporated film is allowed to be formed with a fine pattern, a method of manufacturing the same, and a method of manufacturing an electronic device using such an evaporation mask. Further, there is provided an electronic device having a film-formation pattern that is precisely formed with a fine pattern. The evaporation mask including: a substrate including one or a plurality of first opening sections; and a polymer film provided on a first main surface side of the substrate, the polymer film including one or a plurality of second opening sections communicated with the respective first opening sections.

Abstract: A deposition apparatus 50 forms a thin film 3 in a predetermined pattern on a substrate 10 for an organic EL display. A first correction plate 81 and a second correction plate 82 are placed between a shadow mask 60 and a deposition source 53 that emits deposition particles. Each of the correction plates 81, 82 has a plurality of blade plates 83 and a frame 84 that supports the plurality of blade plates 83. The blade plates 83 are placed so as to be tilted with respect to the shadow mask 60, and to extend parallel to each other with an opening 86 between adjoining ones of the blade plates 83 as viewed in a direction perpendicular the deposition mask 60.

Abstract: Non-stick fixtures for selectively masking portions of a workpiece during application of a workpiece coating are described herein. These fixtures have predetermined surfaces thereon having an average surface roughness of about 25 Ra or less and a Rockwell hardness of about 65 Rc or more. The controlled average surface roughness ensures that these fixtures are non-stick with respect to the workpiece coating being applied to the workpieces disposed therein. The controlled Rockwell hardness ensures that the desired average surface roughness can be maintained throughout repeated use of the fixture in harsh coating environments. These fixtures reduce the workpiece coating bridging that occurs between the fixture and the workpiece, and also reduce the amount of overspray that occurs on the workpiece, thereby minimizing the amount of handwork and/or rework that is necessary after the workpiece is coated. This improves process cycle times and yields significantly.

Abstract: An apparatus for the deposition of semiconductor material on a glass sheet, including at least one vacuum chamber which includes a means for deposition of a semiconductor material on one or more glass sheets and a means for conveying the glass sheets inside the vacuum chamber; the conveyance means forms a continuous plane with the surface of the panels that is subjected to the deposition of conducting material.

Abstract: A mask assembly includes a mask frame, the mask frame having an opening and a frame surrounding the opening, a pattern mask on the mask frame, the pattern mask including a pattern portion having at least one pattern overlapping the opening and a welding portion attached to the frame, and at least one support bar crossing the opening and attached to the pattern mask.

Abstract: A combinatorial processing chamber and method are provided. In the method a fluid volume flows over a surface of a substrate with differing portions of the fluid volume having different constituent components to concurrently expose segregated regions of the substrate to a mixture of the constituent components that differ from constituent components to which adjacent regions are exposed. Differently processed segregated regions are generated through the multiple flowings.

Abstract: [Object] To provide a roll-to-roll vacuum deposition apparatus capable of easily and speedily adjusting a pressing force between a printing roller and a backup roller. [Solving Means] In the present invention, by adjusting a pressing force between a printing roller and a backup roller through a relative movement of a mask forming unit including the printing roller and a transfer roller with respect to a vacuum chamber, individual adjustments of the printing roller and the transfer roller are eliminated and an adjustment of a pressing force on a unit basis is realized, thus achieving simplification of a structure, simplification and enhancement in precision of tasks, and a reduction in work time.

Abstract: The apparatus for fabricating an organic electroluminescent device which can distribute stress applied to the mask uniformly to form precise and reliable light emitting layers is disclosed. The apparatus for fabricating an electroluminescent device according to the present invention comprises a plurality of grippers disposed in a zigzag state at a periphery of a mask for clamping the mask, a plurality of jaws formed on each gripper and contacting with the mask, and power supplying units for supplying power to the grippers to stretch the mask. Each of the grippers is divided into a connecting section connected to the power supplying unit and a head section integrated into the connecting section, and a plurality of jaws are formed on the head section of each gripper, and odd (or even)-numbered grippers disposed at each side of the mask are disposed in a more forward position than even (or odd)-numbered grippers.

Abstract: Systems and methods for forming components with thermal barrier coatings are provided. In this regard, a representative method includes: providing a component having a first side and an opposing second side; and using a preformed mask to obstruct vapors from being deposited on the second side of the component while moving the component relative to the vapors such that the vapors form a thermal barrier coating on the first side of the component.

Abstract: An organic layer deposition apparatus capable of protecting or preventing a patterning slit sheet from sagging, and a frame sheet assembly for the organic layer deposition apparatus.

Abstract: A patterning slit sheet assembly to perform a deposition process to deposit a thin film on a substrate in a fine pattern. A patterning slit sheet assembly includes a patterning slit sheet including a slit unit, and a non-slit region that is located along edges of the slit unit, the patterning slit sheet being smaller than the substrate in at least one of a first direction or a second direction perpendicular to the first direction; a frame combined with the patterning slit sheet to support the patterning slit sheet; and a shielding unit extending on at least one inner side of the frame and overlapping an area including the edges of the slit unit.

Abstract: A method of forming a partial deposition layer and an apparatus of forming the partial deposition layer are provided. A substrate is provided over an evaporation plate. A shielding plate is placed between the evaporation plate and the substrate such that the shielding plate shields a first portion of the substrate and exposes a second portion of the substrate. An evaporation process is performed when the substrate is moving in a predetermined direction such that a evaporation source on the evaporation plate is deposited on the exposed second portion of the substrate but not deposited on the shielded first portion of the substrate.

Abstract: An atmospheric film-coating device and a film-manufacturing apparatus are described. The atmospheric film-coating device includes a delivery device and a nebulization device. The delivery device is suitable for delivering at least one substrate. The nebulization device is used to gasify a film coating solution toward a direction indirectly to the at least one substrate into a plurality of film coating vapor molecules to deposit on a surface of the at least one substrate.

Abstract: A mask assembly for thin film vapor deposition of a flat panel display is disclosed. In the mask assembly, a cleansing solution remaining in the gap between a unit mask and a frame after cleansing the mask assembly may be minimized. The mask assembly includes a frame and a plurality of unit masks. The frame includes a pair of first supporting portions and a pair of second supporting portions that surround an opening. The plurality of unit masks have at least one set of pattern openings, and the unit masks are fixed on the first supporting portion while having a tensile force applied thereto. The first supporting portion includes a first surface and a second surface. The unit masks are fixed on the first surface, and the second surface has a height difference to the first surface along a thickness direction of the unit masks from the first surface.

Abstract: A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled.

Abstract: A deposition mask for depositing a thin film and a method for fabricating the same are disclosed. The deposition mask is configured to ensure a positioning accuracy and a pattern size accuracy and is suitable for use in manufacturing a high definition display device. The deposition mask includes at least one pattern mask having the same patterns as the patterns that are to be formed on a substrate and a frame mask which has at least one opening. The pattern mask is individually and non-detachably fixed to the frame mask at a region of the frame mask corresponding to the opening.

Abstract: Embodiments are disclosed of apparatus and methods for depositing one or more organic materials onto a substrate. One or more thin films can thereby be formed. The organic materials can be those employed in organic LED (OLED) technologies.

Abstract: A coating structure including an outer coating comprising aluminum; and an interlayer disposed between a substrate and the outer coating is provided. The interlayer may include a rare earth metal, a transition metal, or a noble metal. The interlayer may have one or more property of being less responsive to halogen etching relative to the outer coating; having a coefficient of thermal expansion that is greater than the coefficient of thermal expansion of the substrate and less than the coefficient of thermal expansion of the outer coating or vice versa; having a color different from the color of the outer coating; having a electrical conductivity different from the electrical conductivity of the outer coating. A method of making is article is provided. The method may include securing an interlayer to a substrate surface, and securing an outer coating to a surface of the interlayer opposite the substrate.

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract: The present invention (i) uses a mask unit (80) including: a shadow mask (81) that has an opening (82) and that is smaller in area than a vapor deposition region (210) of a film formation substrate (200) and; a vapor deposition source (85) that has a emission hole (86) for emitting a vapor deposition particle, the emission hole (86) being provided so as to face the shadow mask (81), the shadow mask (81) and the vapor deposition source (85) being fixed in position relative to each other, (ii) adjusts an amount of a void between the shadow mask (81) and the film formation substrate (200), (iii) moves at least a first one of the mask unit (80) and the film formation substrate (200) relative to a second one thereof while uniformly maintaining the amount of the void between the mask unit (80) and the film formation substrate (200), and (iv) sequentially deposit the vapor deposition particle onto the vapor deposition region (210) through the opening (82) of the shadow mask (81).

Abstract: A deposition source and an organic layer deposition apparatus that may be simply applied to the manufacture of large-sized display apparatuses on a mass scale and may prevent or substantially prevent deposition source nozzles from being blocked during deposition of a deposition material, thereby improving manufacturing yield and deposition efficiency. A deposition source includes a first deposition source including a plurality of first deposition source nozzles, and a second deposition source including a plurality of second deposition source nozzles wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted toward each other.

Abstract: The invention relates to an arrangement for the coating of substrates, which comprises an evaporation source and a vapor barrier between the evaporation source and the substrate. The vapor barrier is maintained at a temperature which is at least equal to or above the vaporization temperature of the material to be vaporized. The vapor barrier is implemented as a quartz valve, which includes a spherical closure part connected with a movable rod. In a first position this spherical closure part closes a vapor conducting tube, which is connected with the evaporation source, and, in a second position, the spherical closure part abuts a spherical calotte which seals off a quartz tube.

Abstract: A substrate processing method is arranged to perform a heat process on a substrate with a coating film formed thereon to bake and cure the coating film. At first, the substrate, with the coating film formed thereon, is held at a preparatory temperature lower than a lower limit of temperature for baking and curing the coating film, to adjust distribution of a predetermined component in the coating film. Then, the substrate, with distribution of the predetermined component thus adjusted, is subjected to a heat process at a temperature not lower than the lower limit of temperature.

Abstract: The invention relates to a device for pulsed laser deposition, which device comprises: a substrate mount with a substrate mounted thereon; a target mount with a target material mounted thereon and opposite of the substrate mount; a laser device for directing a laser beam on the target material; and a shadow mask arranged over the substrate; wherein the shadow mask is arranged in a movable disc, which movable disc is movable in axial direction to and from the substrate mount. The invention also relates to a method for operating such a device.

Abstract: A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

Abstract: An organic layer deposition apparatus including an electrostatic chuck combined with a substrate so as to fixedly support the substrate. The organic layer deposition apparatus including a receiving surface that has a set curvature for receiving the substrate; a deposition source for discharging a deposition material toward the substrate; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed to face the deposition source nozzle unit, and having a plurality of patterning slits arranged in a second direction perpendicular to the first direction, wherein a cross section of the patterning slit sheet on a plane formed by lines extending in the second direction and a third direction is bent by a set degree, wherein the third direction is perpendicular to the first and second directions.

Abstract: A thin film deposition apparatus for performing continuous deposition, and a mask unit and a crucible unit that are included in the thin film deposition apparatus. A thin film deposition apparatus includes a moving unit configured to move a substrate as a deposition target; a mask unit configured to selectively pass vapor of a deposition source toward the substrate; and a crucible unit including a plurality of crucibles accommodating the deposition source and proceeding along a circulation path passing through the mask unit.

Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.

Abstract: An apparatus for formation of element(s) of an electrochemical cell using a complete process. The apparatus includes a first work piece configured to a transfer device, a source of material in fluid form, a reaction region operably coupled to the source of material and a second work piece configured within a vicinity of the reaction region. The apparatus also has an energy source configured to the reaction region to subject a portion of the material to energy to substantially evaporate the portion of the material within a time period and cause deposition of a gaseous species derived from the evaporated material onto a surface region of the second work piece to form a thickness of material for a component of the solid state electrochemical device and a vacuum chamber to maintain at least the first and second work pieces, the reaction region, and the material within a vacuum environment.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: A methodology and system for applying coatings onto the interior surfaces of components, includes a vapor creation device, a vacuum chamber having a moderate gas pressure and an inert gas jet having controlled velocity and flow fields. The gas jet is created by a rarefied, inert gas supersonic expansion through a nozzle. By controlling the carrier gas flow into a region upstream of the nozzle an upstream pressure is achieved. The carrier gas flow and chamber pumping rate control the downstream pressure. The ratio of the upstream to downstream pressure along with the size and shape of the nozzle opening controls the speed of the gas entering the chamber. Vapor created from a source is transported into the interior regions of a component using binary collisions between the vapor and gas jet atoms. These collisions enable the vapor atoms to scatter onto the interior surfaces of the component and deposit.

Abstract: A thin film deposition apparatus that may prevent a patterning slit sheet from sagging and increase a tensile force of the patterning slit sheet, and a method of manufacturing an organic light-emitting display device using the same.

Abstract: A substrate processing system includes a source unit configured to supply a deposition material to a substrate, a substrate holder configured to hold a substrate to receive the deposition material, a shadow mask comprising a frame that includes two opposing arms; and a crossbar configured to be mounted to the two opposing arms. The frame and the crossbar define a plurality of openings that allow the deposition material supplied by the source unit to be deposited on the substrate. A transport mechanism can produce relative movement between the shadow mask and the substrate.

Abstract: A method of forming a gate valve for use in a high vacuum environment of an electron gun by machining a core of non-magnetic nickel-chromium-molybdenum-iron-tungsten-silicon-carbon alloy that is weldable with nickel alloys and has a tensile strength of about 750 megapascals, machining a cladding of nickel-iron, welding the core to the cladding to form the gate valve, and machining the gate valve so as to remove any dimensional differences at an interface between the core and the cladding. In this manner, because the final mechanical tolerance is controlled by machining instead of part assembling, extremely high alignment accuracy is obtained. The final part provides field shielding as provided by the nickel alloy shell, low stray field provided by the non-magnetic alloy, good vacuum performance, and tight mechanical tolerance control.

Abstract: A system for vacuum deposition of a coating on a web material (N), includes: a feed path of the web material in a vacuum environment; along the feed path, a process roller (19) around which the web material is guided; associated with the process roller, at least one vaporization source (31) of a material to form the coating; upstream of this source, along the feed path of the web material, an applicator unit (51) to apply a masking agent to the web material according to a pre-established pattern. The applicator unit in turn comprises a printing cylinder (53), cooperating with a distributor cylinder (55) of the masking agent, and a source (57) of masking agent. The applicator unit (51) includes at the ends thereof, an adjustment device (73) separate from each other to adjust the position of the applicator unit (51) with respect to the process roller (19).

Abstract: Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate. A gas-admittance body is arranged opposite the substrate holder, said body comprising a gas-leak surface facing the substrate holder and provided with a plurality of essentially evenly distributed outlets for process gases to be introduced into the process chamber. In order to improve the observation of the surface temperature, the inventive device is provided with a plurality of sensors arranged to the rear of the outlets and respectively aligned with an associated outlet.

Abstract: A masking apparatus includes a mask base body and a mask plate. The mask base body includes at least one spacer plate, and a cavity in which an electronic component can be housed. The mask plate is disposed on an upper surface and/or a lower surface of the mask base body. The mask plate includes a film-forming opening with a shape corresponding to the shape of an external structural body to be formed on an outer surface of the component. The mask plate thus allows a film-forming operation to be selectively performed on the outer surface of the component through the film-forming opening. The cavity includes, in an inner surface thereof, a film-forming groove communicating with the film-forming opening so that the external structural body can be formed at once on an upper surface and/or a lower surface of, and also on a peripheral surface of the component.

Abstract: A compensation plate used in a film coating device includes a main body defining a plurality of guiding holes, a plurality of moveable blades connected to the main body, and a plurality of connectors. Each of the plurality of moveable blades defines two through holes corresponding to one of the plurality of guiding holes. The plurality of connectors engage in the through holes and the guiding holes, fix each of the plurality of moveable blades to the main body when each of the plurality of connectors is fastened, and slide in each of the plurality of guiding holes with each of the moveable blades when each of the plurality of connectors releases.

Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract: An apparatus for manufacturing an organic electroluminescence display having an alignment chamber for aligning a mask having openings corresponding to a predetermined pattern with a substrate on which a first electrode layer is formed and detachably attaching the mask and the substrate. The apparatus further including a number of vacuum processing chambers for sequentially forming a number of organic material layers on the substrate attached with the mask. The apparatus also including a transfer robot for transferring the attached mask and substrate to one of the number of vacuum processing chambers and sequentially transferring it between the number of the vacuum processing chambers.

Abstract: A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film has a porosity of less than 1% and a thickness of 1 nm to 10 ?m.

Abstract: A shadow mask deposition system includes a plurality of identical shadow masks arranged in a number of stacks to form a like number of compound shadow masks, each of which is disposed in a deposition vacuum vessel along with a material deposition source. Materials from the material deposition sources are deposited on the substrate via openings in corresponding compound shadow masks, each opening being formed by the whole or partial alignment of apertures in the shadow masks forming the compound shadow mask, to form an array of electronic elements on the substrate.

Abstract: A method and apparatus for manufacturing superconducting tape through an integrated process, including the steps of: heat-treating a substrate wound on a drum in a reaction chamber; continuously depositing components, constituting a buffer layer, a superconducting layer, a contact resistance layer, and a protective layer of the superconducting tape, which are supplied from a deposition chamber, on the substrate; and heat-treating the substrate deposited with the components.

Abstract: A substrate processing system includes a source unit configured to supply a deposition material to a substrate, a substrate holder configured to hold a substrate to receive the deposition material, a shadow mask comprising a frame that includes two opposing arms; and a crossbar configured to be mounted to the two opposing arms. The frame and the crossbar define a plurality of openings that allow the deposition material supplied by the source unit to be deposited on the substrate. A transport mechanism can produce relative movement between the shadow mask and the substrate.

Abstract: A method of forming an epitaxial layer to increase flatness of an epitaxial silicon wafer is provided. In particular, a method of controlling the epitaxial layer thickness in a peripheral part of the wafer is provided. An apparatus for manufacturing an epitaxial wafer by growing an epitaxial layer with reaction of a semiconductor wafer and a source gas in a reaction furnace comprising: a pocket in which the semiconductor wafer is placed; a susceptor fixing the semiconductor; orientation-dependent control means dependent on a crystal orientation of the semiconductor wafer and/or orientation-independent control means independent from the crystal orientation of the semiconductor wafer, wherein the apparatus may improve flatness in a peripheral part of the epitaxial layer.

Abstract: A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.

Abstract: The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.