Abstract: The present application provides a workpiece transfer system in which a production efficiency of a production line to be used can be improved. For example, a workpiece transfer system 1 includes: robots 11 & 12 placed in front of process modules 4 & 6 for conducting a predetermined processing operation on a workpiece W, the robots 11 & 12 bringing the workpiece W into the process modules 4 & 6 and taking the workpiece W out of the process modules 4 & 6; a workpiece storage unit 13 for storing the workpiece W to be brought into the process modules 4 & 6 and the workpiece W taken out of the process modules 4 & 6; and a transfer mechanism 14 for transferring the workpiece storage unit 13 in a direction almost perpendicular to a direction of bringing in and taking out the workpiece W for the process modules 4 & 6.

Abstract: Apparatus and methods for wafer processes such as etching and chemical vapor deposition processes are disclosed. In some embodiments, the apparatus includes a susceptor and a ring disposed beneath the susceptor to influence a thickness of the deposited epitaxial layer.

Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.

Abstract: A device for forming a reduced chamber space, which is a process box or a process hood, containing an apparatus, which positions at least two multilayer bodies each including a surface to be processed, wherein the apparatus is designed such that the multilayer bodies are opposite to each other, wherein the surfaces to be processed are facing away from each other such that the multilayer bodies can be processed as a multilayer body arrangement in a processing system. In addition, a method for positioning the two multilayer bodies comprising a surface to be processed, with the two multilayer bodies disposed in such a device such that multilayer bodies are opposite each other, wherein the surfaces to be processed are facing away from each other, such that the multilayer bodies are processable as a multilayer body arrangement in a processing system.

Abstract: A film deposition apparatus to form a thin film by supplying first and second reaction gases within a vacuum chamber includes a turntable, a protection top plate, first and second reaction gas supply parts extending from a circumferential edge towards a rotation center of the turntable, and a separation gas supply part provided therebetween. First and second spaces respectively include the first and second reaction gas supply parts and have heights H1 and H2. A third space includes the separation gas supply part and has a height H3 lower than H1 and H2. The film deposition apparatus further includes a vacuum chamber protection part which surrounds the turntable and the first, second and third spaces together with the protection top plate to protect the vacuum chamber from corrosion.

Abstract: A surface treatment apparatus in which a disk-like sample-holding plate is provided inside an enclosure constituting a cylindrical circumferential wall. A cylindrical portion in an upper portion of the enclosure constitutes a material fluid supplying channel, and a channel provided on the lateral side of the sample-holding plate in the enclosure and shaped spreading as it goes farther from the cylindrical portion constitutes a fluid discharge channel. The fluid discharge channel employs a parabola curve or the like in which the position of the upper end of the outmost circumference of the sample-holding plate is defined as a focus position and the position of the upper end of the outlet that is symmetrically opposite to the focus position is defined as a reference position.

Abstract: Embodiments of the present disclosure provide an apparatus configured to engage a device for testing the device via automatic test equipment. The apparatus includes a heat sink, wherein the heat sink comprises a plurality of fins extending from the heat sink, and wherein the heat sink is configured to engage the device. The apparatus further includes a heat conduction layer coupled to the heat sink, a first leg coupled to the heat conduction layer, and a second leg coupled to the heat conduction layer. The second leg is spaced apart from the first leg. A vacuum path is defined through (i) the heat conduction layer and (ii) the heat sink. The vacuum path permits the apparatus to engage the device to be tested by the automatic test equipment.

Abstract: A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.

Abstract: A mounting table structure includes a sheet, having thermal conductivity, provided between a focus ring and a base member; a pressing member having a pressing surface that presses the focus ring toward the base member and contact surfaces, facing downward, arranged at a predetermined interval in a circumferential direction thereof; and a supporting member that is connected to the base member and has first and second contact surfaces. Further, the first contact surfaces and the second contact surfaces are arranged at the predetermined interval in the circumferential direction such that the second and first contact surfaces are alternately arranged. Moreover, the first contact surfaces are located at a position different from that of the second contact surfaces in a height direction, and the contact surfaces of the pressing member are protruded at a distance larger than distances of the first and second contact surfaces in the height direction.

Abstract: Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.

Abstract: The wafer bevel etching apparatus of the present invention includes a wafer-protecting mask to cover parts of a wafer. A central region and a wafer bevel region surrounding the central region are defined on the wafer. The wafer-protecting mask includes a center sheltering region and at least one wafer bevel sheltering region. The center sheltering region can completely shelter the central region of the wafer, and the wafer bevel sheltering region extends from the outside edge of the center sheltering region, shelters parts of the wafer bevel region, and exposes the other parts of the wafer bevel region.

Abstract: Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more fins formed on an energy receiving surface of the edge ring. The fins may have at least one sloped side relative to a main body of the edge ring.

Abstract: An electroadhesive surface can include electrodes that are configured to induce an electrostatic attraction with nearby objects upon application of voltage to the electrodes. Systems described herein may also employ a load-bearing frame that is coupled to an electroadhesive gripping surface via an array of height-adjustable pins. Adjusting the pins changes the shape of the gripping surface, and may be used to conform to objects pressed against the gripping surface. Objects pressed against the gripping surface may cause one or more of the pins to retract by sliding within respective channels so as to cause the gripping surface to conform to the object. Some examples further include pin-locking mechanisms configured to secure the position of the pins within their respective channels and thereby fix the shape of the gripping surface after conforming to the object.

Abstract: A method of forming a silicon containing confinement ring for a plasma processing apparatus useful for processing a semiconductor substrate comprises inserting silicon containing vanes into grooves formed in a grooved surface of an annular carbon template wherein the grooved surface of the annular carbon template includes an upwardly projecting step at an inner perimeter thereof wherein each groove extends from the inner perimeter to an outer perimeter of the grooved surface. The step of the grooved surface and a projection at an end of each silicon containing vane is surrounded with an annular carbon member wherein the annular carbon member covers an upper surface of each silicon containing vane in each respective groove. Silicon containing material is deposited on the annular carbon template, the annular carbon member, and exposed portions of each silicon containing vane thereby forming a silicon containing shell of a predetermined thickness.

Abstract: A system for decoupling arcing RF signals in a plasma chamber including a top electrode, an electrostatic chuck for supporting a semiconductor wafer, and a capacitor coupled between the at least one of a plurality of clamping electrodes in the surface of the electrostatic chuck and a baseplate of the electrostatic chuck, the capacitor having a capacitance of greater than about 19 nanofarads, the capacitor disposed within an interior volume of the electrostatic chuck. A method of decoupling arcing RF signals in a plasma chamber is also disclosed.

Abstract: A substrate processing apparatus of the present invention includes a substrate placement stage installed in the process chamber, and configured to place the substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage and configured to heat the substrate; a plurality of struts configured to support the flange from below, and an exhaust unit configured to exhaust an atmosphere in the process chamber, wherein the supporting member is provided between the substrate placement stage and the plurality of struts.

Abstract: Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.

Abstract: A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.

Abstract: Disclosed is an apparatus and method for processing substrate, which facilitates to prevent a substrate form being damaged, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting with the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributing part provided in the chamber lid, wherein the gas distributing part distributes source gas to a source gas distribution area on the substrate supporter, distributes reactant gas to a reactant gas distribution area which is separated from the source gas distribution area, and distributes purge gas to a space between the source gas distribution area and the reactant gas distribution area.

Abstract: A trap mechanism for trapping exhaust gas from a process chamber. The trap assembly includes a housing containing a plurality of trap units. The plurality of trap units are arranged successively along a flow direction of said exhaust gas. Each trap unit includes a set of trap panels parallel to each other and spaced apart from each other. The two opposite surfaces with a larger area of each trap panel are oriented substantially parallel to a flow direction of the exhaust gas flow. The two opposite surfaces with a smaller area of each trap panels are oriented orthogonal to the exhaust gas flow.

Abstract: Provided are a target structure used for generating a charged particle beam, a method of manufacturing the same, and a medical appliance using the same. The target structure includes a target layer and a support having a through hole used as a progressing path of a laser beam or a charged particle beam.

Abstract: Embodiments of mechanisms of a furnace apparatus having a wafer boat are provided. The wafer boat includes a base plate and a support rod extended from the base plate. The wafer boat also includes a support finger including a finger body extended from the support rod and a curved end portion extended from the finger body. The wafer boat further includes a top plate supported on the support rod. A width of the support rod exceeds that of the support finger.

Abstract: An apparatus for processing a substrate contains a processing chamber and a substrate support assembly. The substrate support assembly is disposed within said processing chamber and adapted to support the substrate thereon while said processing is carried out, the substrate support assembly comprising at least two selectively joinable and interdigitable substrate support fixtures.

Abstract: Hydrating an object bearing a latent fingerprint and then selectively drying the object leaving the fingerprint hydrated. The hydrated fingerprint is then coated with cyanoacrylate ester, preferably in a heat accelerated cyanoacrylate ester vacuum chamber. Hydrating is preferably accomplished by chilling the object below a dew point and then exposing the object to humidified air to condense a thin uniform layer of water over the object and latent fingerprint. Drying is preferably done with a vacuum. After drying reaches the preferred state, the CE is heated and coats the condensation-hydrated latent fingerprint. Preferably, the method is implemented in an automated system using one computer-controlled chamber for chilling, condensing, vacuum drying, and CE coating the latent fingerprint. The operator simply puts the object in the chamber, initiates the process by computer, and is prompted by the computer to remove the recovered latent print. Prints unrecoverable by prior art means are recovered.

Abstract: A graphite wafer carrier for LED epitaxial wafer processes, having a plurality of wafer pocket profiles above the carrier for carrying the epitaxial wafer substrate. The inner edge of the wafer pocket profile is a concave step with a plurality of inward-extended support portions; and also has a graphite wafer carrier edge and an axle hole at the center of the graphite wafer carrier. The pocket profiles of different quantities and sizes can be arranged on the basis of different process parameters. The disclosed structure can reduce or eliminate airflow interference and improve the wafer edge yield.

Abstract: Methods for preparing organic thin films on substrates, the method comprising the steps of providing a plurality of organic precursors in the vapor phase, and reacting the plurality or organic precursors at a sub-atmospheric pressure. Also included are thin films made by such a method and apparatuses used to conduct such a method. The method is well-suited to the formation of organic light emitting devices and other display-related technologies.

Abstract: An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided.

Abstract: There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.

Abstract: A susceptor includes a ceramic substrate having a wafer-placing surface; a first circular RF electrode buried in the ceramic substrate; and a second circular RF electrode buried in the ceramic substrate at a depth different from the depth of the first RF electrode. The second RF electrode has a larger diameter than the first RF electrode. The second RF electrode has a plurality of holes with an opening area of 9.42 to 25.13 mm2 distributed in a portion overlapping the first RF electrode in a plan view of the ceramic substrate. The electrode width between the holes is 3 to 7 mm.

Abstract: Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

Abstract: An aspect of the present invention is drawn to a device for use with an electrostatic chuck having a top surface and a bottom surface, the top surface being separated from the bottom surface by a width, the electrostatic chuck additionally having a hole therein, the hole having a first width at the top surface and having a second width at the bottom surface, the first width being less than the second width, the top surface being capable of having wafer disposed thereon. The device includes a pin, a shaft, a neck portion and an outer housing portion. The pin has a pin width less than the first width. The shaft has a pin-holding portion, an end portion and a central portion disposed between the pin-holding portion and the end portion. The central portion has a first bearing portion. The outer housing portion has a first end and a second end and includes a second bearing portion. The shaft is disposed within the outer housing portion and is moveable relative to the outer housing portion.

Abstract: A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.

Abstract: A mask assembly is disclosed to improve organic material deposition efficiency including: a plurality of deposition masks, at least one of opposite ends of each of the plurality of deposition masks is formed to have a plurality of projections, which form at least one boundary aperture region at a boundary of adjacent two deposition masks.

Abstract: The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.

Abstract: A susceptor includes a first step portion on which a wafer is placed; and a convex portion placed on a bottom surface of the first step portion, wherein a void is formed between a top surface of the convex portion and a rear surface of the wafer in a state in which the wafer is placed on the top surface of the convex portion.

Abstract: Processing gas is supplied from the central upper part of a processing chamber to a wafer on a mounting board, while the processing chamber is exhausted from processing gas exhaust passages at areas outside of the wafer. In addition, purge gas is supplied from purge gas supply passages to a buffer chamber formed between the peripheral part of a container main body and that of a cover body. The supplied flow-rate of the processing gas is made less than the exhaust flow-rate in the processing gas exhaust passages. Accordingly, the purge gas in the buffer chamber is drawn into the processing chamber via a purge gas supply hole formed of a gap between the container main body and the cover body due to a negative pressure inside the processing chamber caused by a difference between the flow rates.

Abstract: Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas.

Abstract: Embodiments described herein generally relate to an apparatus for heating substrates. In one embodiment, a susceptor comprises a ring shaped body having a central opening and a lip extending from an edge of the body that circumscribes the central opening. The susceptor comprises carbon fiber or graphene. In another embodiment, a method for forming a susceptor comprises molding carbon fiber with an organic binder into a shape of a ring susceptor and firing the organic binder. In yet another embodiment, a method for forming a susceptor comprises layering graphene sheets into a shape of a ring susceptor.

Abstract: A manufacturing apparatus includes a chuck for contacting a peripheral portion of a workpiece. The apparatus includes a nozzle to eject a process fluid (liquid or gas) toward a first surface while the workpiece is in contact with the chuck. The apparatus also includes a plate having an opening configured such that a support fluid (liquid or gas) can be ejected toward a second surface of the workpiece while the workpiece is in contact with the chuck. In an example, the support fluid can be used to counteract a displacement of the interior portion in the direction perpendicular to the plane of the workpiece due to, for example, gravity and/or hydrostatic pressure of the process fluid.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively.

Abstract: A susceptor having a recessed portion and a ring-like step portion is arranged in a reaction chamber, and a plurality of through bores are formed in a bottom wall in the recessed portion excluding the step portion. A lift pin inserted in each of the through bores temporarily holds a wafer, then a lower surface of an outer peripheral portion of the wafer is mounted on the step portion to accommodate the wafer in the recessed portion, and a raw material gas is circulated in the reaction chamber to form an epitaxial layer on a wafer surface in the recessed portion. When forming the epitaxial layer on the wafer surface, the lift pin protrudes upwards from an upper surface of the bottom wall, and a height h of a top portion of the lift pin based on the upper surface of the bottom wall as a reference is set to the range from a position where the height h exceeds 0 mm to a position immediately before the lift pin comes into contact with the wafer.

Abstract: A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Abstract: The present invention provides a component supporting device which has: a platform, a vacuum system, a gas supply system and a discharger system. The platform has a supporting surface, a bottom surface and at least one through hole, and the through hole passes through the supporting surface and the bottom surface. The vacuum system provides a vacuum suction to the through hole. The gas supply system is used to output at least one type of gas to the through hole. The discharger system ionizes the gas into an ion fluid. Thus, the through hole can be used to provide the vacuum suction for supporting and sucking a component, or to provide the ion fluid when releasing the vacuum suction for more efficiently, uniformly and rapidly removing static electricity on a surface of the component.

Abstract: Embodiments of the disclosure relate to an apparatus for processing a semiconductor substrate. The apparatus includes a process chamber having a substrate support for supporting a substrate, a lower dome and an upper dome opposing the lower dome, a plurality of gas injects disposed within a sidewall of the process chamber. The apparatus includes a gas delivery system coupled to the process chamber via the plurality of gas injects, the gas delivery system includes a gas conduit providing one or more chemical species to the plurality of gas injects via a first fluid line, a dopant source providing one or more dopants to the plurality of gas injects via a second fluid line, and a fast switching valve disposed between the second fluid line and the process chamber, wherein the fast switching valve switches flowing of the one or more dopants between the process chamber and an exhaust.

Abstract: The object of the present invention is to provide an assembly, wafer holding assembly and attaching structure thereof, wherein sufficient air-tightness is assured during prolonged cycles of temperature rises and uninstallations and replacements of the assemblies are possible. The joined assembly, according to the present invention, comprises a plate-shaped ceramic body; a ring-shaped member; and a hollow metal cylinder with one end thereof joined to the bottom surface of the plate-shaped ceramic body via a metal joint and the other end thereof joined to the ring-shaped member; wherein, the hollow metal cylinder having a shape to relax the stress caused by the differential thermal expansion between the plate-shaped ceramic body and the ring-shaped member.

Abstract: There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased.

Abstract: This invention discloses a reaction apparatus for wafer treatment, an electrostatic chuck and a wafer temperature control method, in the field of semiconductor processing. The electrostatic chuck comprises an insulating layer for supporting a wafer and a lamp array disposed in the insulating layer. Each lamp of the lamp array can be independently controlled to turn on and off and/or to adjust the output power. By controlling the on/off switch and/or output power of each lamp of the lamp array the temperature of the wafer held on the ESC is adjusted and temperature non-uniformity can be more favorably adjusted, greatly improving wafer temperature uniformity, particularly alleviating non-radial temperature non-uniformity.

Abstract: Methods and apparatus for reducing autodoping and backside defects on a substrate during epitaxial deposition processes are provided herein. In some embodiments, an apparatus for reducing autodoping and backside defects on a substrate includes a substrate support ring having a substrate holder structure configured to support the substrate in a position for processing along an edge defined by the backside of the substrate and a sidewall of the substrate or along a plurality of discrete points on or proximate to the edge; and a spacer ring for positioning the substrate support ring above a susceptor plate to define a substrate gap region between the susceptor plate and the backside of the substrate, the spacer ring comprising a plurality of openings formed therethrough that facilitate passage of a gas into and out of the substrate gap region.

Abstract: A manufacturing apparatus and an electrode for use with the manufacturing apparatus are provided for deposition of a material on a carrier body. Typically, the carrier body has a first end and a second end spaced from each other. A socket is disposed at each end of the carrier body. The manufacturing apparatus includes a housing that defines a chamber. At least one electrode is disposed through the housing with the electrode at least partially disposed within the chamber for coupling to the socket. The electrode has an exterior surface having a contact region that is adapted to contact the socket. An exterior coating is disposed on the exterior surface of the electrode, outside of the contact region. The exterior coating has an electrical conductivity of at least 9×106 Siemens/meter and a corrosion resistance that is higher than silver in a galvanic series that is based upon room temperature sea water as an electrolyte.