Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

Abstract: Apparatus for forming a paper or board web made from fibers in which the web is treated with calcium hydroxide and then with carbon dioxide gas so as to form calcium carbonate.

Abstract: A plurality of processing chambers are connected to a common chamber (103 in FIG. 1), and they comprehend a processing chamber for oxidation (107), a processing chamber for solution application (108), a processing chamber for baking (109), and processing chambers for vapor-phase film formation (110, 111). Owing to a thin-film forming apparatus of such construction, it is permitted to fabricate an EL (electroluminescence) element employing a high-molecular EL material, without touching the open air. Thus, an EL display device of high reliability can be fabricated.

Abstract: In a method apparatus for measuring the temperature of a semiconductor substrate during processing thereof in a processing chamber, a resonant circuit formed on the substrate surface is energized by an electromagnetic field radiation device, and disturbances in the electromagnetic field are detected to determine the resonant frequency of the resonant circuit. The temperature of the substrate is determined as a function of the resonant frequency. The substrate is moved into and out of processing chamber by a transfer arm, and the radiation device is disposed on the transfer arm or mounted on the processing chamber. Multiple resonant circuits may be provided, which are energized by movement of the transfer arm, without transferring the substrate.

Abstract: In a plasma CVD apparatus for applying a film deposition process to a semiconductor wafer (W), a wafer placement stage (3) is provided at a center of a vacuum chamber (2). The placement stage (3) is mounted to a side wall (63) via a support part (6). An exhaust port (9) having a diameter equal to or smaller than a diameter of the placement stage (3) is provided under the placement stage (3). A center axis (C1) of the exhaust port (9) is displaced from a center axis of the placement stage (3) in a direction opposite to an extending direction of the support part (6), thereby achieving an efficient exhaust.

Abstract: The disclosure herein relates to a high throughput system for thin film deposition on substrates which can be used in applications such as optical disks, and in particular DVD disks, chip-scale packaging, and plastic based display, for example. An apparatus useful in the production of products of the kind described above includes: (a) a continuously moving web for simultaneously transporting a number of substrates to which a thin film of material is to be applied, wherein the moving web is a roll-to-roll moving web; (b) a central processing chamber which is maintained under vacuum and through which at least a portion of said continuously moving web travels; and, (c) at least one deposition device which is located within said central processing chamber, where at least a portion of said continuously moving web is exposed to material deposited from said deposition device. Typically the deposition device is a magnetron sputtering device.

Abstract: A battery-operated device provided on a thin-film battery and a method for making. Some embodiments provide a system that includes a vacuum chamber, a plurality of pairs of source and take-up reels within the vacuum chamber, including a first source reel that supplies a first strip of substrate material and a first take-up reel, and a second source reel that supplies a first mask strip having a plurality of different masks and a second take-up reel, a first deposition station configured to deposit material onto the first strip of substrate running between the first source reel and the first take-up reel, as defined by the first mask strip running between the second source reel and the second take-up reel, and a controller operatively coupled to run the first strip of substrate between the first source reel and the first take-up reel at a first independent rate and tension, and to run the mask strip between the second source reel and the second take-up reel.

Abstract: A battery-operated device provided on a thin-film battery and a method for making. Some embodiments provide a system that includes a vacuum chamber, a plurality of pairs of source and take-up reels within the vacuum chamber, including a first source reel that supplies a first strip of substrate material and a first take-up reel, and a second source reel that supplies onto a second strip of substrate running between the second source reel and a second take-up reel; and a controller operatively coupled to run the first strip of substrate between the first source reel and the first take-up reel at a first independent rate and tension, and to run the second strip of substrate between the second source reel and the second take-up reel at a second independent rate and tension. Some embodiments further include a roll-to-roll mask that has a plurality of different mask patterns that are moved into place as needed.

Abstract: A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a process gas to the process chamber, and a vacuum pump is mounted in the process chamber for exhausting the process gas. A support is mounted in the process chamber for supporting the wafer, and a position control assembly raises and lowers the chuck. A controller controls the position control assembly to vary a distance between the wafer and the gas supply assembly during the deposition process. A CVD method for forming a deposition layer on a wafer includes supplying a process gas to a process chamber, dividing a process time into a plurality of process stages, varying a distance between the wafer and a gas supply assembly according to the process stages, and exhausting the process gas.

Abstract: A method and apparatus for thermal processing of a workpiece reduces the time taken for a processing gas to be purged, or switched, during one or more processing steps for thermal processing systems. The thermal processing system includes a heating chamber in accordance with one example embodiment of the present invention. A small-volume workpiece enclosure is disposed about the workpiece. A translation mechanism, e.g., in the form of a positioning assembly, supports the small-volume workpiece enclosure for moving the small-volume workpiece enclosure and the workpiece within the heating chamber. The small-volume workpiece enclosure enables the use of relatively smaller amounts of process (ambient) gases, and decreases the purge time of such gases. The heating chamber can have at least one of a thermal radiation intensity gradient and a temperature gradient for thermally processing the workpiece. The heating chamber can have one or more heating elements disposed about the heating chamber.

Abstract: A non-arcing bias rail assembly for supplying an electrical bias potential to a moving workpiece/substrate holder, comprising an elongated metal strip adapted for mounting along a wall of a workpiece/substrate treatment apparatus and having a surface bounded by first and second opposed, laterally extending side edges; a bracket comprised of an electrically insulating material and including a first portion mounted on the surface adjacent to and extending along a portion of the first side edge, and a second portion forming an upstanding wall extending perpendicularly from the first portion and including a surface facing the second side edge of the metal strip; an electrically conductive bias contact spring assembly mounted on the upstanding wall of the bracket facing the second side edge; and electrically insulated wire means electrically connected to the bias contact spring assembly for supplying an electrical bias potential.

Abstract: An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas diversion nozzle is positioned inside the chamber. The laser beam produced by the excimer laser passes through the gas diversion nozzle. The gas supply device connects with the gas diversion nozzle for providing a jet of gas to the laser-irradiated area and carrying away any pollutants from the irradiated area.

Abstract: A vaporizer delivery system including a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber. The coated wire substrate is drawn past a heat source at a predetermined speed to rapidly heat and vaporize the sublimatable solid precursor.

Abstract: A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.

Abstract: There are disclosed a method and a reaction apparatus which can safely and continuously treat/discharge especially a short object to be treated without any direct contact with a gas atmosphere, and which surely/efficiently treats the object with a gas without any uneven treatment. A short object A to be treated is put in a hermetically sealed cylindrical treatment section 1. In the treatment section 1, the object is held in a predetermined position by a first operation piece 11 to be treated with a gas for a predetermined time. Then, the holding by the first operation piece is released to move the object A by a desired distance. Subsequently, the object is held in a predetermined position by a second operation piece 12 to be treated again with the gas for a predetermined time, and then a treated object A1 is discharged. This discharged treated object A1 is conveyed to the outside of the apparatus.

Abstract: A vaporizer delivery system including a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber. The coated wire substrate is drawn past a heat source at a predetermined speed to rapidly heat and vaporize the sublimatable solid precursor.

Abstract: A chemical vapor deposition system (10) includes a housing (12) having an entry (30) and an exit (32) through which glass sheet substrates (G) to be coated are introduced and exited from a deposition chamber (14) defined by lower and upper housing portions (16, 18) having a seal assembly (22) at their horizontal junction which is higher than both the entry and the exit.

Abstract: The present invention relates to an apparatus for coating one or more workpieces such as components to be used in jet engines or industrial turbines. The apparatus comprises a device for simultaneously manipulating a workpiece about multiple axes while holding a center of the workpiece at a fixed position with respect to a source of coating material. The device for manipulating the workpiece preferably comprises a modular fixture while allows the workpiece to be simultaneously rotated about a first axis, rotated about a second axis at an angle to the first axis, and titled through a range of motion such as from +45 degrees to −45 degrees with respect to the first axis.

Abstract: A processing chamber with a flow-restricting ring is generally provided. In one embodiment, a processing chamber includes a chamber body, a lid assembly, a substrate support and a flow-restricting ring. The chamber body has sidewalls and a bottom. The lid assembly is disposed on the sidewalls and encloses an interior volume of the chamber body. The substrate support is disposed in the interior volume of the chamber body and is adjustable in elevation between the lid assembly and the bottom of the chamber body. The flow-restricting ring has an outer edge disposed proximate the sidewalls of the chamber body and an inner edge disposed proximate the substrate support when the substrate support is disposed in an elevated position. The inner edge of the ring and the substrate support are disposed in a spaced-apart relation defining an annular flow control orifice.

Abstract: A machine tool is provided comprising a base, a slide assembly attached to the base for supporting a tool and translating the tool along an axis, and a workpiece holder attached to the base. At least one of the slide assembly and the workpiece holder are movable laterally with respect to the axis. Means are provided for aligning the slide assembly and the workpiece holder in a desired lateral relationship. A method of aligning a machine tool is also provided.

Abstract: A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).

Abstract: A substrate support is provided that features a lift pin having at least one larger diameter shoulder section that forms a relief region between the lift pin and a guide hole disposed through a substrate support. The shoulder section minimizes contact between the substrate support and lift pin guide hole, thereby reducing pin scratching, particle generation, component wear, and increasing the useful life of the pin. In another embodiment, a flat-bottom tip is provided to promote self-standing of the lift pin, reducing pin tilting or leaning of the lift pin within the guide hole.

Abstract: An object of the disclosure is to provide a vacuum processing apparatus capable of minimizing the size of the whole apparatus by reducing a floor area occupied by a vacuum pump. An etching apparatus 20 for applying an etching process on an object to be processed in a vacuum includes a processing vessel 21 for applying the etching process on a semiconductor wafer W introduced into the vessel 21 and a vacuum pump 30 arranged below the processing vessel 21 so as to be coaxial with the processing vessel 21, for sucking exhaust gas in the processing vessel 21 to form the vacuum.

Abstract: A semiconductor wafer susceptor for batch substrate processing. The susceptor includes a central region in a primary plane and a plurality of flat annular extensions extending below the central region in a secondary plane. The primary and secondary planes are parallel to each other. An edge of the substrate overhangs the central region allowing no contact of the susceptor with the substrate edge.

Abstract: One embodiment relates to an apparatus for sputtering material onto a workpiece, the apparatus including a vacuum chamber and a target disposed in the vacuum chamber, the target comprising a material to be deposited onto said workpiece. The apparatus also includes a holder for the workpiece and at least one recyclable process kit component positioned to accumulate material sputtered from the target. The process kit component includes a base metal layer including titanium and an outer layer of titanium nitride. The titanium nitride layer acts as an etch stop during recycling of the process kit component. The process kit component may include a part selected from the group of a shield, pedestal, shutter, coil, collimator, deposition ring, cover ring, and clamp ring.

Abstract: The invention provides an evaporation system which is one of deposition devices promoting an efficiency of utilizing an EL material and excellent in uniformity and throughput of forming an EL layer and an evaporation method therefor. Further, the invention provides a method of efficiently vapor-depositing an EL material to a large area substrate. Further, the invention provides a system capable of avoiding an impurity from mixing to the EL material.

Abstract: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location.

Abstract: The present application provides a PECVD reaction chamber for processing semiconductor wafers comprising a susceptor for supporting a semiconductor wafer inside the reaction chamber wherein the susceptor comprises a plurality vertical through-bores, a moving means for moving the susceptor vertically between at least a first position and a second position, wafer-lift pins passing through the through-bores wherein the lower end of each wafer pin is attached to a lift member, and a lift member linked with an elevating mechanism for moving the wafer-lift pins vertically. The disclosed apparatus reduces contamination on the underside of the semiconductor wafer.

Abstract: Method and assembly for forming a paper or board web and a product made using the method. According to the method, the web (11) is made from fibers and then the web (11) is treated with pigment particles. The web is treated with microscopic pigment particles whose average size is so small as to permit the particles to adhere to each other by van der Waals forces. The particles are transferred to the web and adhered thereto advantageously using an ion-blast technique.

Abstract: A resistance heating element 33 for heating a wafer W is embedded within a ceramic heater 22 that forms a susceptor for a semiconductor wafer W to be processed, and power lines 35 from the resistance heating element 33 extend out of the processing chamber 20. A sheathing bellows 38 that houses the power lines 35 in an insulated state is interposed between the ceramic heater 22 and a base plate 24 of the processing chamber 20, and an end piece 39 of the sheathing bellows 38 is connected by screws 40 to the ceramic heater 22 to provide a space 50 therebetween. The screws 40 are such as to permit the thermal expansion of the sheathing bellows 38. This configuration makes it possible to make the temperature distribution in the surface of the semiconductor wafer uniform and thus improve the uniformity of film formation, and also prevent corrosion of components such as the power lines and terminals, and suppress the generation of particles.

Abstract: A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber.

Abstract: The present invention provides a vapor deposition device suitable for multiface cutting by using a large area board, having a high efficiency of utilizing an EL material and excellent in uniformity of a film, wherein a board 13 and a vapor deposition mask 14 are mounted above board holding means 12, an interval between a vapor deposition source holder 17 and an object to be deposited (board 13) is narrowed to be equal to or smaller than 30 cm, preferably, equal to or smaller than 20 cm, further preferably, 5 through 15 cm and in vapor deposition, the vapor deposition source holder 17 is moved in the X direction or Y direction in accordance with an insulating member (referred to also as bank, partition wall) 10 and a shutter 15 is opened and closed to thereby form a film.

Abstract: A method for manufacturing a coated substrate disk, comprises linearly bringing the substrate on a mounting, into an evacuated transport chamber and rotating the mounting in the chamber. The mounting is then extended into a coating position and coating of the substrate takes place. The mounting is then linearly retracted into the chamber again and rotated into a position for guiding the substrate out of the chamber. These steps are repeated for several substrates and then a pump opening into the chamber is closed by means of the mounting or the substrate. The chamber is then flooded and vacuum-tightly closed and the pump opening is released. The chamber is evacuated and the substrate moving and coating steps are repeated for more substrates.

Abstract: An apparatus and a method for self-aligning a cover ring onto a wafer pedestal in a physical vapor deposition chamber are described. The apparatus for self-aligning a cover ring to a wafer pedestal includes a wafer pedestal in the shape of a circular disk equipped on an outer periphery of the disk at least two, and preferably four, male alignment members such as protruding tabs; and a cover ring of annular shape that has an inwardly, horizontally extending lip and at least one downwardly, vertically extending lip equipped on an inner periphery at least two, and preferably four, female alignment members such as recessed slots that are adapted for receiving the at least two male alignment members when the wafer pedestal is raised to engage the cover ring.

Abstract: A method and an apparatus for producing a thin film on a substrate. A substrate is placed in a reaction space and is subjected to alternately repeated surface reactions with at least two different reactants. The reactants are fed in the vapor phase repeatedly and alternately into the reaction space through tree-like piping having a plurality of channels and nozzle orifices, where the nozzle orifices are arranged in a plane perpendicular to the plane of the substrate. The apparatus includes a reaction chamber in which the substrate is placed, inflow piping having a plurality of channels and nozzle orifices, and outlet passages for removing the reaction products and excess reactants. The inflow piping has a tree-like shape and is contained in a plurality of interconnected plates. The nozzle orifices are arranged in an essentially planar fashion in a plane essentially perpendicular to the plane of the substrate.

Abstract: To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first axis. The plasma cross-section at the level at which the plasma contacts the article is asymmetric so that those points on the article that move at a greater linear velocity (due to being farther from the first axis) move longer distances through the plasma. As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles are provided for loading and unloading the plasma processing system. One of the shuttles stands empty waiting to unload the processed articles from the system, while the other shuttle holds unprocessed articles waiting to load them into the system.

Abstract: A processing system for processing a wafer with a processing vapor is provided. The processing system comprises a chamber, a wafer holder disposed within the chamber for holding the wafer, a drive mechanism for moving the wafer holder through the chamber, and a processing vapor inlet disposed within the chamber for introducing the processing vapor into the chamber and directing the processing vapor onto the wafer. The processing vapor inlet has a generally elongate cross-section configured to create a flow of processing vapor with a generally elongate cross-section and to direct the flow onto the wafer surface in an orientation generally perpendicular to the wafer surface, thus causing the formation of a generally linear stagnation zone in the flow of the processing vapor where the flow meets the wafer surface. The processing system may include a first outlet positioned toward the front of the chamber and a second outlet positioned toward the back of the chamber.

Abstract: A semiconductor wafer processing system including a multi-chamber module having vertically-stacked semiconductor wafer process chambers and a loadlock chamber dedicated to each semiconductor wafer process chamber. Each process chamber includes a chuck for holding a wafer during wafer processing. The multi-chamber modules may be oriented in a linear array. The system further includes an apparatus having a dual-wafer single-axis transfer arm including a monolithic arm pivotally mounted within said loadlock chamber about a single pivot axis. The apparatus is adapted to carry two wafers, one unprocessed and one processed, simultaneously between the loadlock chamber and the process chamber. A method utilizing the disclosed system is also provided.

Abstract: A heat treatment apparatus comprises: a chamber; a cooling plate and a heating plate disposed within the chamber vertically spaced from each other; plural lift pins used to support a material to be treated; a supporting member for supporting the plural lift pins; and an elevator member to which the supporting member is attached through a joint so that the supporting member can be selectively made rotatable and can be fixed at any inclined angle, wherein distances of tips of each of the lift pins from the heating or cooling plate are initially adjusted to be uniform through inclination of the supporting member while the tips contact the heating or cooling plate, after which the supporting member is fixed in an adjusted inclined angle and then the material to be treated is lifted up with the plural lift pins to closely approach the heating or cooling plate during heat treatment.

Abstract: A susceptor assembly and an insulator strip for a susceptor assembly to reduce or eliminate arcing and temperature spikes between a ground cable and a thermocouple wire in susceptor and C-chuck assemblies. In one embodiment of the invention, an insulator strip is placed between the thermocouple lead and the ground cable in a susceptor assembly support arm channel.

Abstract: A mechanical translator includes at least one magnet that is disposed on a substrate to carry a load and has a magnetic axis generally transverse to the substrate, establishing a magnetic field with maximum external density adjacent the substrate. An ultra low friction interface is obtained with ferrofluid bearings, such as a light mineral oil medium mixed with isoparaffinic acid, which establish a critical angle of displacement from a horizontal static position of less than 1 degree, and preferably less than 10 minutes. A controller of magnetic material can be placed on the opposite side of the substrate to control the movement of the magnets.

Abstract: The chamber has a lenticular cross-section with a horizontal support plate extending between sides of the chamber. A rectangular aperture is formed in the support plate for positioning a rotatable susceptor. A temperature compensation ring surrounds the susceptor and is supported by fingers connected to the support plate. The ring may be circular or may conform to the shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A sacrificial quartz plate may be provided between the circular ring and the rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into an upper region and purge gas into a lower region.

Abstract: An exemplary method for using a mobile plating system is provided that includes locating the mobile plating system at a desired location for plating, positioning an external vacuum pump from an interior position of a mobile storage volume of the mobile plasma plating system to an exterior position, and coupling the external vacuum pump to a vacuum chamber within the mobile storage volume of the mobile plasma plating system using a flexible piping segment, rigid coupling with a dampening effect, or other arrangement operable to reduce and/or eliminate the mechanical vibrations within the vacuum chamber due to the operation of the external vacuum pump.

Abstract: A thermocoupled lift system for semiconductor etch chambers. The system comprises multiple thermocoupled lift pins which are vertically extendible from a heater block inside a semiconductor etch chamber and are capable of lowering a semiconductor wafer onto the heater block before the etching process and lifting the wafer from the heater block after the etching process. In the event that the temperature of the wafer exceeds a predetermined value after the etching process, the lift pins trigger release of a cooling purge gas such as nitrogen into the etching chamber to partially cool the wafer prior to transfer of the wafer to a cool down chamber for further cooling. The initial gas-induced cooling of the wafer prevents thermal stressing thereof upon transfer of the wafer to the cool down chamber.

Abstract: A baking unit of the present invention comprises: a hot plate on which the substrate is placed; a casing; a gas supply tubes; a baffle ring which surrounds the wafer and is provided with a plurality of gas blowing apertures; and a rotation motor. An inert gas is supplied to the wafer from the plurality of blowing apertures which is moved by rotation or turn round of the baffle by using the rotation motor.

Abstract: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

Abstract: An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

Abstract: Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead. In one embodiment of the present invention, the system is capable of utilizing silane as a silicon source gas.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.