Abstract: A process chamber 1 for PECVD (Plasma Enhanced Chemical Vapor Deposition) coating of a substrate includes an electrode, which is integrated in a contact frame, which is firmly connected to the recipient. A movable carrier in the process chamber carries at least one substrate. The carrier is transported by means of a driven roller positioner into the process chamber or out of the process chamber along a transport route defined by the movement. As soon as the carrier inside the recipient has reached a certain position, the lower roller positioner is uncoupled from carrier by lowering by means of a lifting device. In this regard, the carrier detaches itself from the upper roller positioner. Then, the carrier is accepted by a transfer device (not shown) and brought from the transport position laterally into a treatment position in contact with the contact frame. In this way, reliable contact is produced between the electrode and a counter-electrode provided in carrier.

Abstract: A substarate processing apparatus capable of reducing the capacity of a space in an internal chamber. The internal chamber is housed in a space in an external chamber. A gas supply unit supplies a process gas into the space in the internal chamber. The space in the external chamber is under a reduced pressure or filled with an inert gas. An enclosure being movable and included in the internal chamber defines the space in the internal chamber with a stage heater included in the internal chamber. When a wafer is transferred in and out by a transfer arm used to transfer the wafer, the enclosure exits out of a motion range within which the transfer arm can move.

Abstract: An oven is provided for curing or reflowing compounds on objects, such as lead frames or other substrates. The oven comprises a heating chamber, a heating assembly mounted in thermal communication with the heating chamber to provide heat thereto, and a support assembly for supporting the object in the heating chamber for heating. The heating assembly and support assembly are configured to be movable relative to one another for controllably positioning the object at variable distances with respect to the heating assembly. Heating of the object according to a heating profile can thus be achieved by controlled heating of the object at different temperatures by positioning the object at different distances with respect to the heating assembly during the heating process although there is a single heating zone.

Abstract: A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 ?m or more and 3 ?m or less.

Abstract: The present invention provides a wafer support tool for heat treatment easy in working and capable of realizing reduction in cost without generating damages or slip dislocations that would be otherwise caused by high temperature heat treatment and a heat treatment apparatus. The present invention is directed to a wafer support tool for heat treatment comprising: a plurality of wafer support members for supporting a wafer to be heat treated; and a support member holder for holding the wafer support members, wherein the wafer support members each has a contact portion with the wafer, at least one of the contact portions being movable relative to the support member holder.

Abstract: A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.

Abstract: A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.

Abstract: A gas flow in a load-lock type preliminary chamber is improved.

Abstract: A substrate damage prevention system and method for a plasma treating apparatus are provided. The system may include a lower electrode on which a substrate may be mounted, an inert gas supply unit which may supply an inert gas to an upper surface of the lower electrode on which the substrate is mounted, and an air supply unit which may supply air to the upper surface of the lower electrode. An inert gas may be supplied between the lower electrode and the substrate in order to control the temperature of the substrate during the chucking. Air may be supplied between the lower electrode and the substrate during dechucking in order to allow the substrate to be easily separated from the lower electrode.

Abstract: A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.

Abstract: A substrate handling system and method in which an air chuck produces a film of air between the substrate and the air chuck, a magnetic chuck attracts the substrate to the air chuck, and an actuator subsystem moves the magnetic chuck closer to and away from the air chuck to alternately pick up a substrate and release the substrate.

Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

Abstract: A chemical vapor deposition (CVD) apparatus includes a process chamber where a deposition process is performed on a wafer. A gas supply assembly is mounted in the process chamber for supplying a process gas to the process chamber, and a vacuum pump is mounted in the process chamber for exhausting the process gas. A support is mounted in the process chamber for supporting the wafer, and a position control assembly raises and lowers the chuck. A controller controls the position control assembly to vary a distance between the wafer and the gas supply assembly during the deposition process. A CVD method for forming a deposition layer on a wafer includes supplying a process gas to a process chamber, dividing a process time into a plurality of process stages, varying a distance between the wafer and a gas supply assembly according to the process stages, and exhausting the process gas.

Abstract: A substrate supporting frame, a substrate supporting frame assembly including the frame, a method of framing a substrate using the frame, a method of fabricating a donor substrate using the substrate supporting frame assembly, and a method of fabricating an Organic Light Emitting Display (OLED) using the donor substrate each include a substrate supporting frame having a main body having an opening, a plurality of pins protruding from at least two sides of a top surface of the main body, and outer pressing units for respectively pressing the plurality of pins outward from the main body.

Abstract: An apparatus for providing a vacuum coating to workpieces positioned on a rake unit, including: a substantially rectangular central chamber; a first chamber located adjacent the central chamber on a first side, wherein the rake unit is positioned in the first chamber after workpieces are loaded thereon; a second chamber located adjacent the central chamber on a second side, wherein workpieces on the rake unit are heated to a predetermined temperature; a third chamber located adjacent the central chamber on a third side, wherein workpieces on the rake unit are coated in a desired manner; a fourth chamber located adjacent the central chamber on a fourth side, wherein workpieces on the rake unit are unloaded; and, a mechanism for transporting the rake unit from the first chamber to each of the second, third and fourth chambers in a desired sequence via the central chamber.

Abstract: A thermally sprayed member or an electrode includes a basic material, a thermally sprayed film formed on the surface of the basic material, the thermally sprayed film being made of an insulating ceramic and a metallic intermediate layer provided between the basic material and the thermally sprayed film for increasing a bonding force therebetween, wherein the thermally sprayed film side of the member is exposed to a high frequency plasma atmosphere and the electrode is intended to form a high frequency plasma on the side of the thermally sprayed film. The basic material includes a base portion made of a conductive material and a dielectric portion provided to include a part of a surface of the basic material. Further, the intermediate layer is comprised of a plurality of island-shaped parts isolated from each other.

Abstract: This invention describes an apparatus, Scanning Localized Evaporation Methodology (SLEM) for the close proximity deposition of thin films with high feature definition, high deposition rates, and significantly improved material economy. An array of fixed thin film heating elements, each capable of being individually energized, is mounted on a transport mechanism inside a vacuum chamber. The evaporable material is deposited on a heating element. The SLEM system loads the surface of heating elements, made of foils, with evaporable material. The loaded thin film heating element is transported to the substrate site for re-evaporation. The re-evaporation onto a substrate, which is maintained at the desired temperature, takes place through a mask. The mask, having patterned openings dictated by the structural requirements of the fabrication, may be heated to prevent clogging of the openings. The translation of the substrate past the evaporation site permits replication of the pattern over its entire surface.

Abstract: Methods for positioning a substrate support within a processing chamber are provided. In one embodiment, a method for adjusting the orientation of a substrate support within a processing chamber using a mounting assembly is provided. The mounting assembly includes an upper portion coupled to the processing chamber and a lower portion coupled to the upper portion. The method includes adjusting a lateral position of a collar of the second portion relative to the first portion, and adjusting a planar orientation of the lower housing of the second portion relative to the first portion.

Abstract: A method and apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a first portion configured to mount to a bottom of a processing chamber and second portion configured to support a substrate support. The first portion is releaseably coupled to the second portion. The second portion includes a lower housing coupled to a lower collar. The lower collar is laterally positionable relative to the first portion. The lower housing has a planar orientation that is adjustable relative to a planar orientation of the lower collar.

Abstract: Provided is a bake system. The bake system includes a heating plate having a heating plate having a substrate on an upper surface. A case is disposed below the heating plate to support the heating plate; a first cover is disposed above the heating plate and coupled to the case to form a chamber; and a second cover is disposed in the first cover, and directly above the substrate in the bake process for preventing heat convection on the substrate.

Abstract: In a method of unloading and/or loading a wafer in a semiconductor device manufacturing apparatus, pumping and/or purge operations are performed in a process chamber while the wafer is separated from a susceptor by a desired distance using a plurality of lift pins.

Abstract: Shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber are necessary to be suppressed by the apparatus and method of the invention, whereby contamination of a substrate by particles is suppressed. If one vacuum chamber is a substrate processing chamber for performing a vacuum process on the substrate and the other chamber is a transfer chamber having a substrate transfer device therein, the gate valve is opened when inner pressures of both the vacuum chambers are less than 66.5 Pa and higher one thereof is less than twice a lower one thereof. Preferably, a purge gas for peeling of particles is supplied, before supplying the purge gas for pressure control, into the substrate processing chamber with a flow rate greater than that of the purge gas for pressure control.

Abstract: A battery-operated device provided on a thin-film battery and a method for making. Some embodiments provide a system that includes a vacuum chamber, a plurality of pairs of source and take-up reels within the vacuum chamber, including a first source reel that supplies a first strip of substrate material and a first take-up reel, and a second source reel that supplies a first mask strip having a plurality of different masks and a second take-up reel, a first deposition station configured to deposit material onto the first strip of substrate running between the first source reel and the first take-up reel, as defined by the first mask strip running between the second source reel and the second take-up reel, and a controller operatively coupled to run the first strip of substrate between the first source reel and the first take-up reel at a first independent rate and tension, and to run the mask strip between the second source reel and the second take-up reel.

Abstract: The present invention relates to a substrate treatment apparatus, and more particularly, to a substrate treatment apparatus, wherein lift pins can be installed while the levels of the lift pins are easily adjusted using a tool such as a wrench. A substrate treatment apparatus of the present invention comprises a chamber; a pin plate provided inside or outside the chamber; a driving means for lifting or lowering the pin plate; and at least one lift pin that penetrates through the pin plate so that the lift pin is coupled to the pin plate, and has a tool insertion recess formed at a lower end of the lift pin.

Abstract: The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each partition being provided with a wafer mounting concave portion 6a, 6b, 6c on which a wafer is laid, and the inclination angle ?a, ?b, ?c of a bottom face 6a1, 6b1, 6c1 of the concave portion for each partition to the vertical line is gradually decreased in each partition from the upper part to the lower part.

Abstract: A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.

Abstract: A heater includes a heating member formed in a plate shape that includes a substrate-heating surface on which a substrate is mounted and a heating member rear surface which is on the opposite side of the substrate-heating surfaces. The heater also has a resistance heating element embedded therein. An auxiliary member is placed on the side of the heating member rear surface of the heating member and has an opposing surface which opposes the heating member rear surface. A planar gas path for gas ejected on the substrate-heating surface is formed between the heating member rear surface and the opposing surface.

Abstract: A thin-film deposition apparatus includes a reaction chamber, a substrate transfer chamber, a susceptor having a radially-extending step portion, a ring-shaped separation wall for separating the reaction chamber and the substrate transfer chamber at a processing position where the susceptor is positioned inside the ring-shaped separation wall, and a conductive sealing member which is interposed between the radially-extending step portion and the separation wall to seal the reaction chamber from the substrate transfer chamber when the susceptor is at a processing position.

Abstract: An inexpensive workpiece holder having high reliability and a processing apparatus equipped with the workpiece holder are provided, in which damage caused by oxygen in the air is prevented. The holder comprises: a ceramic body which has an electrode and a heater circuit and which can holds a workpiece; a tubular member having an end portion connected to the ceramic body; a sealing member which is disposed inside the tubular member and which isolates a space inside the tubular member into two regions: a region on the first end portion (“sealed portion”) and a region on the opposite side (“opposite region”); and power supply conductive members which extend from the opposite region side, penetrating the sealing member to the sealed region side, and which are electrically connected to the electrode and the heater circuit.

Abstract: A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.

Abstract: A lift pin calibrator and a method of using the same set the height and orientation of a lift pin relative to a substrate support plate having a bore in which the lift pin is raised and lowered. The lift pin calibrator has a contact body, a pressure member and a tubular alignment member that are disposed coaxially. A pressure transmitting portion of the pressure member extends into an upper portion of the alignment member and the contact component extends through the pressure member so that an end of the contact component is left exposed by the pressure member. An outer diameter of the pressure transmitting portion of the pressure member is greater than an inner diameter of the alignment member. An extension of the alignment member is inserted into a bore of the substrate support plate. The pressure transmitting portion of the pressure member is forced into the alignment member to expand the alignment member and hold it in place.

Abstract: A vacuum thermal annealing device is provided having a temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the heated gas flow, a chamber wall heater is turned on and maintains a temperature for a proper annealing time. Upon completion of the annealing process, the chamber wall heater shuts down and air is forced around the chamber wall heater. Additionally, cool gas replaces the heated gas to cool the substrate.

Abstract: Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

Abstract: A self-retaining O-ring having at least two radial struts connectively extending from inside surfaces to a central sphere-shaped retainer. The top surfaces of the radial struts are formed below the top surfaces of the O-ring. The central sphere-shaped retainer is connectively formed to the radial struts and extending below the bottom surfaces of the struts. A circular recess is provided for containing and supporting the O-ring, its inside surface is dovetailed. The circular recess has a spherical hole disposed on its center for insertion of the sphere-shaped retainer.

Abstract: An apparatus and processes for large scale inline manufacturing of CdTe photovoltaic modules in which all steps, including rapid substrate heating, deposition of CdS, deposition of CdTe, CdCl2 treatment, and ohmic contact formation, are performed within a single vacuum boundary at modest vacuum pressures. A p+ ohmic contact region is formed by subliming a metal salt onto the CdTe layer. A back electrode is formed by way of a low cost spray process, and module scribing is performed by means of abrasive blasting or mechanical brushing through a mask. The vacuum process apparatus facilitates selective heating of substrates and films, exposure of substrates and films to vapor with minimal vapor leakage, deposition of thin films onto a substrate, and stripping thin films from a substrate. A substrate transport apparatus permits the movement of substrates into and out of vacuum during the thin film deposition processes, while preventing the collection of coatings on the substrate transport apparatus itself.

Abstract: Embodiments of the present invention provide an apparatus for constraining and supporting the lift pins to prevent or minimize lateral movement of the lift pins that causes substrate hand-off problems and associated degradation in substrate processing characteristics and results. In one embodiment, a lift pin assembly for manipulating a substrate above a support surface of a substrate support comprises a plurality of lift pins movable between an up position and a down position. The lift pins include top ends and bottom ends. The top ends are configured to be lifted above the support surface of the substrate support to contact a bottom surface of the substrate in the up position. The top ends are configured to be positioned at or below the support surface of the substrate support in the down position.

Abstract: A substrate supporting frame, a substrate supporting frame assembly including the frame, a method of framing a substrate using the frame, a method of fabricating a donor substrate using the substrate supporting frame assembly, and a method of fabricating an Organic Light Emitting Display (OLED) using the donor substrate each include a substrate supporting frame having a main body having an opening, a plurality of pins protruding from at least two sides of a top surface of the main body, and outer pressing units for respectively pressing the plurality of pins outward from the main body.

Abstract: Continuously operating furnace and method for obtaining thermal diffusion coating on the outside surface of metallic articles. The furnace is configured as a tunnel through which in succession are advanced closed containers filled with the processed articles and with powder mixture, containing diffusing specie. A chain conveyor, passing through the furnace, advances the containers along a transportation path. The furnace is provided with plurality of stopper means, capable to intermittently prevent the advancement of the containers and to retain them in discrete positions, situated along the transportation path. The containers advance in parallel being always directed perpendicularly to the transportation path and their retention in the discrete positions causes their rotation about their longitudinal axes. Continuous operation is associated with improved efficiency and increased capacity.

Abstract: A process is disclosed for manufacturing coated substantially plane workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile. The system and process can be used to deposit defined layer thickness distribution profiles on substrates in a reactive coating.

Abstract: To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first axis. The plasma cross-section at the level at which the plasma contacts the article is asymmetric so that those points on the article that move at a greater linear velocity (due to being farther from the first axis) move longer distances through the plasma. As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles are provided for loading and unloading the plasma processing system. One of the shuttles stands empty waiting to unload the processed articles from the system, while the other shuttle holds unprocessed articles waiting to load them into the system.

Abstract: A substrate support assembly positively secures a substrate holder support to a rotation shaft with respect to rotationally applied forces. A substrate holder support is configured to have an opening in a socket into which, when aligned with an indentation in the rotational shaft to form a passage, a retaining member is removably inserted to engage both the socket opening and the shaft indentation. Methods of rotating a substrate while minimizing rotational slippage of the substrate holder support with respect to the shaft are also provided.

Abstract: A laser CVD device capable of tightening adhesion of a film formed by laser CVD to a film formation face of a substrate and preventing cracks from occurring in the film itself is to be provided. The device comprises a plasma pretreating unit for turning pretreating gas into a plasma state by arc discharge and for supplying the plasma sate gas to the film formation face; and a film forming unit having means for sealing film forming gas while being isolated from an external atmosphere, means for radiating a laser beam to the film forming gas, wherein the film is formed over the film formation face of the substrate.

Abstract: The invention relates to a drive mechanism for a vacuum treatment apparatus by which substrate holders can be transported around an axis (A—A) from an entrance airlock to an exit airlock. A stationary supporting column (1) is disposed in the center and on it a rotatory drive chamber (6) is borne which has control rods (9) for a rotation and a radial displacement of the substrate holders. In the rotatory drive chamber (6), a motor (4) and rotatory displacement drives for the control rods (9) are arranged on the supporting column (1), the control rods being in active connection each with a corresponding substrate holder.

Abstract: A system and method for real time deposition process control based on resulting product detection, where the system and method detect an amount of at least one reaction product in real time, while the deposition process is being performed, the detected amount of reaction product is compared with a reference amount, and a comparison result is fed back in real time to adjust a supply of one or more reactants. The system and method provide real time control over the deposition process and/or reduce the number of wafers produced that do not meet processing target values.

Abstract: Broadly speaking, a wafer processing chamber for performing a high pressure wafer process is provided. More specifically, the wafer processing chamber incorporates a wafer processing volume and an outer chamber volume. The wafer processing volume is configured to contain a high pressure. The outer chamber volume is configured to serve as a buffer between the high pressure of the wafer processing volume and a lower pressure of an environment outside the wafer processing chamber. Thus, the outer chamber volume can control a pressure differential between the high pressure wafer processing volume and the lower pressure outside environment. In this manner, the wafer processing chamber, incorporating the high pressure wafer processing volume, can interface with a conventional wafer transfer module operating under either atmospheric or sub-atmospheric pressure conditions.

Abstract: A plasma enhanced atomic layer deposition (PEALD) apparatus and a method of forming a conductive thin film using the same are disclosed. According to the present invention of a PEALD apparatus and a method, a process gas inlet tube and a process gas outlet tube are installed symmetrically and concentrically with respect to a substrate, thereby allowing the process gas to flow uniformly, evenly and smoothly over the substrate, thereby forming a thin film uniformly over the substrate. A uniquely designed showerhead assembly provides not only reduces the volume of the reactor space, but also allows the process gases to flow uniformly, evenly and smoothly throughout the reation space area and reduces the volume of the reaction space, and the smaller volume makes it easier and fast to change the process gases for sequential and repeated process operation.

Abstract: A vacuum evaporator according to the present invention comprises a vacuum chamber, a rod-like evaporation source provided to be liftable into and out of the vacuum chamber, and a work support means for supporting, relative to the evaporation source lowered into the vacuum chamber, works W arranged to surround the evaporation source. The vacuum chamber is formed of a fixed chamber part and a movable chamber part provided connectably to and disconnectably from the fixed chamber part and mounted with the work support means. Either one movable chamber part is horizontally moved and connected to the fixed chamber part in the state where the evaporation source is raised and retreated out of the vacuum chamber to perform vacuum evaporation treatment. According to such a structure, the maintenance of the vacuum evaporator can be performed without raising or lowering the lower plate or taking out the work support means from the vacuum chamber.

Abstract: A vapor deposition shadow mask system includes a number of series connected vacuum vessels each having a material deposition source and shadow mask positioned therein. A substrate is translated along a path that has a longitudinal axis that extends through the vacuum vessels. Centers of shadow masks in first and second vacuum vessels are offset laterally on opposite sides of the longitudinal axis. The system is operative for depositing material on a second area of the substrate via the material deposition source and shadow mask in the second vacuum vessel in a manner that overlaps a portion of the material deposited on a first, adjacent area of the substrate via the material deposition source and shadow mask in the first vacuum vessel.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

Abstract: Methods of coating core materials by providing target materials and core materials; ablating the target materials to form ablated particulate target materials; and coating the core materials with said ablated particulate target materials; wherein the method is performed at a pressure of about 10 Torr or higher. Methods of coating particles with nanometer to multiple nanometer thick coatings in atmospheric pressure, and using pneumatic fluidization, are also provided.