Abstract: A gas flow in a load-lock type preliminary chamber is improved.

Abstract: A degassing from a susceptor heated at a high temperature in a vacuum atmosphere is suppressed. The susceptor is disposed between a heater and a substrate and partitions a space in the chamber into a first chamber space where the heater is placed and a second chambers space where the substrate is placed, and the surface of the susceptor facing the second chamber space is coated with a pyrolytic carbon layer (15) of thickness of 10 ?m to 50 ?m.

Abstract: A semiconductor device manufacturing method comprises the steps of loading a substrate into a processing chamber, mounting the substrate on a support tool in the processing chamber, processing the substrate mounted on the support tool by supplying process gas into the processing chamber, purging the interior of the processing chamber after the substrate processing step, and unloading the processed substrate from the processing chamber after the step of purging the interior of the processing chamber, wherein in the step of purging the interior of the processing chamber, exhaust is performed toward above the substrate and toward below the substrate in the processing chamber, and the exhaust rate toward above the substrate is set larger than the exhaust rate toward below the substrate.

Abstract: A vacuum thermal annealing device is provided having temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the heated gas flow, a chamber wall heater is turned on and maintains a temperature for a proper annealing time. Upon completion of the annealing process, the chamber wall heater shuts down and air is forced around the chamber wall heater. Additionally, cool gas replaces the heated gas to cool the substrate.

Abstract: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

Abstract: Disclosed is an apparatus and a method for reducing flash in an injection mold (532 or 542,543) which molds a molded article between a first mold surface and a second mold surface. The apparatus includes an active material actuator (530 or 533a and 533b or 561a and 561b) configured to, in response to application or removal of an electrical actuation signal thereto, change dimension and urge the first mold surface relative to the second mold surface to reduce flash therebetween. The apparatus also includes a transmission structure (533) configured to provide in use, the electrical actuation signal to said active material actuator (530 or 533a and 533b or 561a and 561b) includes a set of active material actuators stacked one against the other to provide a varying sealing force to urge the first mold surface relative to the second mold surface.

Abstract: A scalable, high-throughput nanoimprint lithography priming tool includes a dual-reactant chemical vapor deposition reactor chamber, a mandrel configured to hold a plurality of hard disks at an inner diameter of the hard disks, and a transport mechanism to move the plurality of hard disks into and out of the chamber. The tool may also include a transfer tool to transfer the plurality of hard disks to additional chambers for processing.

Abstract: A reactor, system including reactors, and methods for depositing thin films on microfeature workpieces comprising a reaction vessel having a chamber, a gas distributor attached to the reaction vessel, a workpiece holder in the chamber, and a side unit in the reaction vessel at a location relative to the gas distributor and/or the workpiece holder. The gas distributor has a plurality of primary outlets open to the chamber, and the workpiece holder has a process site aligned with the primary outlets. The side unit has a secondary outlet open to the chamber that operates independently of the primary outlets. One of the inner compartment, the side unit and/or the workpiece holder can be movable between a first position to form a small-volume cell for introducing the reactant gases to the microfeature workpiece and a second position to form a large volume space for purging the reactant gases.

Abstract: Manifolds are designed to deliver fluid through multiple orifices of the manifold such that for a given inlet fluid pressure the fluid being output from the multiple orifices has a desired mass flow profile. The desired mass flow profile includes a desired mass flow rate and a desired direction and distribution of flow in three-dimensional space. The manifold is first modeled as a two-dimensional representation to determine manifold parameters necessary to achieve the desired mass flow profile within the two dimensions. Then, the manifold is modeled as a three-dimensional representation based on the parameters previously determined for the two-dimensional representation to determine manifold parameters of the third dimension that are necessary to achieve the desired mass flow profile within the three dimensions.

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a flow equalizer configured to control the flow of gases between a process volume and an exhaust port of a process chamber. The flow equalizer includes at least one restrictor plate configured to be disposed in a plane proximate a surface of a substrate to be processed and defines an azimuthally non-uniform gap between an edge of the at least one restrictor plate and one of either a chamber wall or a substrate support when installed in the process chamber.

Abstract: A substrate support frame for loading or unloading a substrate on or from a susceptor in a chamber, wherein the substrate support frame is disposed over the susceptor, comprises a body supporting a boundary portion of the substrate; a first opening through a center portion of the body and exposing a center portion of the susceptor; and a second opening corresponding to one side of the body, wherein the substrate is disposed on the body through the second opening to overlap the center portion of the susceptor.

Abstract: A shutter disk having a tuned coefficient of thermal expansion is provided herein. In some embodiments, a shutter disk having a tuned coefficient of thermal expansion may include a body formed from a first material comprising at least two components, wherein a ratio of each of the at least two components to one another is selected to provide a coefficient of thermal expansion of the body that is substantially similar to a coefficient of thermal expansion of a second material to be deposited atop the body.

Abstract: A seal-protected perimeter partition valve apparatus (450) defines a vacuum and pressure sealed space (401) within a larger space (540) confining a substrate processing chamber with optimized geometry, minimized footprint and 360° substrate accessibility. A compact perimeter partitioned assembly (520) with seal protected perimeter partition valve (450) and internally contained substrate placement member (480) further provides processing system modularity and substantially minimized system footprint.

Abstract: To make possible a tightly packed, essentially horizontal storage of wafers (40), in which a simplified access to each of these wafers (40) is possible, a device is provided having a plurality of superimposed storage elements (10). The storage elements (10) have device features (16) for depositing the wafers (40). The storage elements (10) have projections (14) for lifting, whereby a specific storage element (10a) as well as all storage elements (10) arranged above this specific storage element (10a) can be lifted by a predetermined first height for producing a contact gap. The projections (14) can also be used to lift the storage element (10b) arranged below the said storage element (10a) by a predetermined second height for producing a freedom of access.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. Preferably, the coater includes at least one coating apparatus (e.g., which is adapted for delivering coating material) on each of two sides of the path of substrate travel.

Abstract: The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

Abstract: A system for of aligning a mask to a substrate comprising: a fixture for holding the mask and the substrate in fixed positions relative to each other; means for holding the substrate, the means for holding the substrate protruding through openings in a table and the fixture, the means for holding fixedly mounted on a stage, the stage moveable in first and second directions and rotatable about an axis relative to the table; means for affixing the fixture containing the mask and the substrate to the table; means for controlling the means for temporarily affixing so as to generate a uniform force around a perimeter of the fixture to effectuate the temporarily affixing; means for aligning the mask to the substrate, the means for aligning controlling movement of the stage in the first and second directions and rotation about the axis; and means for fastening the fixture together.

Abstract: A substrate ring assembly is provided for a substrate support having a peripheral edge. The assembly has an annular band having an inner perimeter that surrounds and at least partially covers the peripheral edge of the substrate support. The assembly also has a clamp to secure the annular band to the peripheral edge of the substrate support.

Abstract: A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).

Abstract: A vapor deposition reactor includes a chamber filled with a first material, and at least one reaction module in the chamber. The reaction module may be configured to make a substrate pass the reaction module through a relative motion between the substrate and the reaction module. The reaction module may include an injection unit for injecting a second material to the substrate. A method for forming thin film includes positioning a substrate in a chamber, filling a first material in the chamber, moving the substrate relative to a reaction module in the chamber, and injecting a second material to the substrate while the substrate passes the reaction module.

Abstract: A method of and system for chemical vapor deposition of layers of material on substrates for producing thin film semiconductor devices provides for continuous in-line processing. The method and system are adapted for size and potential speed, and for scaling to further increase the rate of production. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layer, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The chemical vapor for deposition at each region covers an area that is substantial for substrates, then, also having a substantial area. The chemical vapor may include an organometallic material, such as diethyl zinc vapor, or dimethyl zinc vapor, as well as a material that provides oxygen, such as water vapor or nitrous oxide gas. It may also include a material that provides a dopant.

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being figured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Abstract: An electroless deposition system and electroless deposition stations are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer substrates between the first and second processing stations. The electroless deposition station also includes various fluid delivery and substrate temperature controlling devices to perform a contamination free and uniform electroless deposition process.

Abstract: A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

Abstract: A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other with a space, each of guide plate having a plurality of floating gas ejecting holes; a gas supplying source for supplying a floating gas to the guide plates; a tray that is placed on one of the guide plates in order to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray to the adjacent other guide plate from the guide plate, wherein the tray includes a main body portion having both side edges parallel to a transfer direction of the tray, and an outward projecting portion that is formed so as to partially project outwardly from at least one of both side edges of the main body portion, and wherein the transfer arm is in contact and engaged with the outward projecting portion when the tray is transferred by the transfer arm.

Abstract: Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.

Abstract: A processing system for processing a substrate includes a process chamber for receiving the substrate, a patterning device installed within the process chamber, and a mechanism for transferring the substrate into the process chamber and for aligning the substrate relative to the patterning device.

Abstract: Embodiments described herein generally provide a lift pin assembly having increased wafer placement accuracy, repeatability, reliability, and corrosion resistance. In one embodiment, a lift pin assembly for positioning a substrate relative to a substrate support is provided. The lift pin assembly comprises a lift pin comprising a pin shaft, a pin head coupled with a first end of the pin shaft for supporting the substrate, and a shoulder coupled with a second end of the pin shaft. The lift pin assembly further comprises a cylindrical body slidably coupled with the pin shaft and a locking pin for preventing the cylindrical body from sliding along the shaft, wherein the shoulder has a through-hole dimensioned to accommodate the locking pin.

Abstract: The peeling-off of a deposited film caused by a carrier is restrained, and the exchange period of the carrier is prolonged. In a carrier 1 including a slider 7 having a mechanism for conveying a substrate holder 3 that supports a substrate 2, a deposition shield 20a, 20b that can cover the substrate holder 3 and has an opening equivalent to or larger than the substrate 2 on which a film is formed is installed on both surfaces of the substrate holder 3. At this time, the substrate holder 3, supporting claws 4, and fixing parts 6 are arranged so as to be hidden by the deposition shield 20. In a film forming chamber, to form a predetermined film on the substrate 2, the carrier 1 covered by the deposition shield 20 is exposed to a plasma space in the film forming chamber, and the film is formed. The deposition of film onto the substrate holder 3, the supporting claws 4, and the fixing parts 6 that are covered by the deposition shield 20 can be restrained.

Abstract: An apparatus and a corresponding process for producing an organic EL display device comprising a first unit for carrying a supporting substrate in, a second unit for heating at least the supporting substrate before forming an organic luminescence medium, thereby performing a dehydration treatment, a third unit for forming the organic luminescence medium and an upper element, and a fourth unit for sealing the periphery of the apparatus with a sealing member, wherein the first unit is arranged between the second unit and the third unit, a first carrying device is set up in the first unit, and a second carrying device is arranged between the third unit and the fourth unit.

Abstract: A system for processing a semiconductor substrate during fabrication of semiconductor devices provides a plurality of semiconductor substrate processing stations in a physically integrated system, as well as a semiconductor substrate transport system for transporting a semiconductor substrate between the respective processing stations. In particular, the processing system according to the present invention favors the use of liquid phase process steps, particularly deposition process steps, instead of gas or vapor phase processing. Even more particularly, the system contemplates deposition of a metallic barrier layer 30 on the semiconductor substrate in liquid phase.

Abstract: In the present invention, a plurality of heat treatment units are arranged side by side in a linear form and a substrate transfer mechanism for transferring the substrate between the heat treatment units is provided in a heat treatment apparatus. The substrate is sequentially heat-treated in the arrangement order, whereby one heat treatment as a whole is dividedly and successively performed in the plurality of heat treatment units. This allows substrates to be heat-treated along the same route and uniforms the thermal history among the substrates. At the time when heat-treating a plurality of substrates, the present invention causes less variation in thermal history among the substrates as compared to the case of parallel heat treatments.

Abstract: The invention provides a multi-film forming apparatus including a substrate holder stock chamber for storing a plurality of substrate holders separately from a path in the multi-film forming apparatus, so that production can be performed without being affected by the process of removing a film accumulated on the surface of the substrate holder and the process of replacing the substrate holder, or by the process of removing a film accumulated on the surface of the substrate holder or the process of replacing the substrate holder, and hence high-throughput production is possible. A branch path is provided on the path of the multi-film forming apparatus, and a substrate holder stock chamber for storing a plurality of substrate holders which enables retrieval of the substrate holder from the path and feeding of the substrate holder to the path is provided.

Abstract: Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed.

Abstract: A susceptor positioning and supporting device of a vacuum apparatus for carrying and elevating a substrate in a vacuum apparatus chamber is provided. The device has a lateral positioning and supporting mechanism to perform clamping and positioning at a side of a susceptor, preventing the susceptor from slanting inside the vacuum apparatus chamber. The lateral positioning and supporting mechanism and the susceptor thereby forms a closed beam support mechanism capable of reducing load suspension deformation at the ends of the large susceptor. The device improves planarity of the large susceptor and the substrate, and in turn improves uniformity of a thin film deposited on the substrate.

Abstract: The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

Abstract: A substrate processing apparatus comprises a processing chamber for storing a substrate and performing a specified processing on the substrate, a substrate holding jig for holding the substrate in the processing chamber, a placement stand capable of moving the substrate holding jig inside and outside the processing chamber while mounting the substrate holding jig, a substrate holding jig movement mechanism for moving the substrate holding jig to a location different from the placement stand while holding the substrate holding jig, and a substrate holding jig movement suppression mechanism for suppressing vertical and horizontal movement of the substrate holding jig in order to keep the substrate holding jig mounted on the placement unit of the substrate holding jig movement mechanism.

Abstract: An organic material deposition system and method are provided. The organic material deposition apparatus may include a chamber having a processing space formed therein, a source supply device that generates an organic source and injects and diffuses the organic source into the processing space through a shower head provided in the processing space. The substrate is supported by a stage device that moves the substrate upward and downward within the processing space to adjust a distance between the substrate and the shower head. A pumping port provided at an upper positioned at an upper portion of the processing space provides a vacuum exhaust path that directs flow through the processing space toward the stage device. This allows an organic thin film with a uniform thickness to be deposited using an apparatus with a relatively simple configuration.

Abstract: Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.

Abstract: In a film formation chamber, a gas flow to be introduced is rectified in a direction away from the film formation surface of the substrate on which the film is to be formed, so as to exhaust the fine particles generated in the discharge space and the fragmental particles generated by exfoliation of the film from the wall of the vacuum chamber and the discharge electrode, thereby preventing the particles from adhering the film formation surface of the substrate. The fine particles and fragmental particles are sucked and exhausted from a plurality of apertures provided on the entire surface of the discharge electrode to establish a steady state in which the amount of a film deposited on the discharge electrode and the amount of an exfoliating film to be exhausted are equal to each other, thereby allowing continuous film formation without cleaning the discharge electrode over a long period.

Abstract: A method of processing a substrate by a substrate processing apparatus is disclosed. The substrate processing apparatus includes a processing container including a first space where a first processing gas or a second processing gas is supplied onto the substrate and a second space formed around the first space; a first exhaust unit configured to evacuate the first space; and a second exhaust unit configured to evacuate the second space. The method includes a first step of supplying the first processing gas into the first space; a second step of discharging the first processing gas from the first space; a third step of supplying the second processing gas into the first space; and a fourth step of discharging the second processing gas from the first space; wherein the pressure in the second space is adjusted by a pressure-adjusting gas supplied into the second space.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed.

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: Electronic devices are formed on a substrate that is advanced stepwise through a plurality of deposition vessels. Each deposition vessel includes a source of deposition material and has at least two shadow masks associated therewith. Each of the two masks is alternately positioned within the corresponding deposition vessel for patterning the deposition material onto the substrate through apertures in the mask positioned therein, and positioned in an adjacent cleaning vessel for mask cleaning. The patterning onto the substrate and the cleaning of at least one of the masks are performed concurrently.

Abstract: A device for adjusting a spacing between a chamber body such as a chamber body and a leveling plate such as a leveling plate comprises a mounting stud configured to be mounted to the chamber body. The mounting stud includes a stud threaded surface. A bushing is capable of being fixed to the leveling plate, and includes a bushing threaded surface. An adjustment screw has a first threaded surface threadingly engaged with the stud threaded surface of the mounting stud, and a second threaded surface threadingly engaged with the bushing threaded surface of the bushing. The threaded surfaces are configured, when the bushing is fixed to the leveling plate and the adjustment screw is turned, to cause the adjustment screw to move in a first direction with respect to the mounting stud at a first rate and the bushing to move in a second direction opposite from the first direction with respect to the adjustment screw at a second rate which is different from the first rate.

Abstract: Disclosed are a surface treatment system that includes a deposition chamber (100) for forming a deposition layer at a surface of an object of surface treatment (900); a carrier (910) for carrying the object of surface treatment (900) by mounting thereon, and a power applying unit (230) for forming a deposition reaction by applying a power to the object in the deposition chamber (100), wherein the power applying unit (230) includes a fixed power applying unit (220) installed in the deposition chamber (100) and connected to an external power source (210); and a movable power applying unit (230) installed at the carrier (910) for being electrically connected to the fixed power applying unit (220) movably as the carrier on which the object of surface treatment (900) is mounted goes into the deposition chamber and thereby applying a power to the object of surface treatment mounted on the carrier by contacting thereto.

Abstract: One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.