Abstract: An apparatus to improve high-k dielectric film and metal gate interface in the fabrication of MOSFET by depositing a metal gate on a high-k dielectric comprising an annealing step annealing a substrate with high-k dielectric film deposited thereon in a thermal annealing module and a depositing step depositing a metal gate material on said annealed substrate in a metal gate deposition module, characterized that said annealing step and depositing step are carried out consecutively without a vacuum break.

Abstract: A vacuum coating unit with a transport device for transporting substrates in a transport direction, comprises at least one first endless conveyor running in the transport direction and having a conveyor device guided around at least two deflection rollers. The conveyor device is located at a distance from a guide device extending in the transport direction parallel to the conveyor device of the first endless conveyor in such a way that the substrates can be introduced into the gap between the conveyor device and the guide device and can be moved in the transport direction by the displacement of the conveyor device.

Abstract: A ceramic heater attaining more uniform temperature distribution from the start to the end of cooling is provided. Further, in a cooling module used for cooling the heater, liquid leakage during use is prevented, degradation in cooling capability is prevented and the performance is maintained for a long period of use, and the manufacturing cost of the module is decreased. The ceramic heater includes a ceramic heater body and a cooling module cooling the heater body, and the cooling module has a structure formed by arranging a pipe in a trench formed in a plate-shaped structure.

Abstract: Processes and apparatus are described that form a solar cell absorber on a surface of a workpiece by reacting a precursor layer disposed on the surface of the workpiece with an absorber constituent vapor in a heating chamber. The absorber constituent material is delivered from an absorber constituent material delivery system in molten form into a container in the heating chamber and vaporized to be used during the reaction.

Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

Abstract: Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.

Abstract: An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing.

Abstract: A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.

Abstract: In a vacuum coating installation to coat planar substrates, comprising a vacuum chamber and a transport device arranged in the vacuum chamber for transporting the substrates along a transportation path through the vacuum chamber, with the transport device comprising a multitude of transport rollers arranged successively along the transportation path, each transport roller is adapted to be mounted at least at two different positions, vertically distanced from each other. A carrier frame has a substrate accepting structure and a guiding rod arranged at the bottom of the carrier frame in the direction of transportation to create a friction connection with the transportation device, connected to the carrier frame at the connection points, with the guiding rod being connected at least at one connection point to the carrier frame such that a relative displacement is possible of the guiding rod relative to the carrier frame in the direction of transportation.

Abstract: In one embodiment, a substrate centering apparatus for centering a substrate on a substrate support is provided. In one embodiment, the invention comprises an apparatus that is mounted to an underside of a substrate support and includes a lever that projects upward through a support surface of the substrate support. The lever may be biased toward a center of the substrate support to contact an edge of a substrate. A mechanism is coupled to the lever and moves the lever radially outward to release the substrate. In one embodiment, the mechanism is actuated as the substrate support moves downward to a position that facilitates substrate handoff.

Abstract: The invention relates to a system for controlling the positioning of a susceptor (2) rotating in the reaction chamber (3) of an epitaxial reactor. The control is carried out on the basis of the different path of a laser beam transmitted by a source (15) when it is reflected by a pin (8) arranged on the susceptor (2).

Abstract: The invention includes multi-station workpiece processors, methods of processing semiconductor workpieces within multi-station workpiece processors, and methods of moving semiconductor workpieces within multi-station workpiece processors. In one implementation, a multi-station workpiece processor includes a processing chamber comprising multiple stations for processing individual workpieces. A pedestal is associated with individual of the stations. The pedestals are mounted for selective vertical up movement within the chamber to contact a workpiece and for selective vertical down movement within the chamber to be displaced from a workpiece. The pedestals respectively comprise an upper surface upon which an individual workpiece is received during processing within the chamber. At least one workpiece engagement arm is associated with individual of the pedestals.

Abstract: An evaporation tool for forming a dopant structure on a front surface of a continuous workpiece, wherein the front surface includes a precursor layer to form Group IBIIIAVIA absorbers for solar cells and the dopant structure is used to introduce dopants into the precursor layer. The tool includes at least a first vapor source station to deposit a Group VIA material, such as Se, and a second vapor station to deposit a dopant material, such as Na, onto the continuous workpiece. A moving assembly of the tool holds and moves the continuous workpiece within the tool by feeding the continuous workpiece from a first end and taking up from a second end of the tool. A support assembly of the tool contacts a back surface of the continuous workpiece to remove the heat from and apply tension to the continuous workpiece during the process.

Abstract: A plasma processing apparatus includes a processing container for receiving a substrate to be processed and processing the substrate by a plasma of a processing gas, a substrate mounting table, installed in the processing container, for mounting the substrate thereon, and a gas supplying unit for supplying the processing gas into the processing container. Here, the substrate mounting table includes a mounting table main body formed of an insulator component. Here, an electrode is embedded inside the mounting table main body, a high frequency power supply for supplying a high frequency power is connected to the electrode, and one or more exposed electrodes are installed to be exposed toward the outside of the mounting table main body and electrically connected to the electrode in the mounting table main body.

Abstract: A bottle processing apparatus includes a rotary bottle vacuum transfer system and a bottle coating system. The rotary bottle vacuum transfer system takes bottles from atmospheric pressure and transfers the bottles to the bottle coating system at a sub-atmospheric pressure in a continuous assembly line fashion. In the bottle coating system, a thin film coating having barrier properties is formed on at least one surface of the bottles in a continuous assembly line fashion. After formation of the thin film coating, the rotary bottle vacuum transfer system returns the bottles from the sub-atmospheric pressure region of the bottle coating system back to atmospheric pressure in a continuous assembly line fashion.

Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.

Abstract: A vapor deposition apparatus is provided, which does not cause changes in composition, decomposition and quality change of an organic vapor deposition material. The organic vapor deposition material is placed on a conveying unit by an amount for a single substrate, and conveyed into a vapor deposition vessel preliminarily heated. Since a small amount of the organic vapor deposition material is heated and exhausted through generation of an organic material vapor under heating condition for each substrate, neither decomposition nor quality change with moisture occurs because heating time is short. Even though different organic compounds are mixed, no change in composition occurs so that an organic vapor deposition material in which a base material is mixed with a coloring substance can be pooled in a pooling tank and then placed in the conveying unit.

Abstract: A method is provided for producing a processing atmosphere for coating substrates, with this method primarily being used in CVD-processes for precipitating an individual layer or a system of individual layers under defined processing atmospheres, in which processing gas is supplied to a coating chamber in a defined manner and exhausted. Via the method and related devices, a variable processing atmosphere is adjustable inside the coating chamber in a flexible, reliable and homogenous manner, and requiring a reduced maintenance and energy expense, even when the substrate is heated. The processing gas is created by at least one gas channel extending perpendicular in reference to the substrate by way of supplying gas flow or exhausting, with a lateral extension being equivalent to the width of the substrate.

Abstract: A cell controller controls the operation of a transport robot to keep a substrate belonging to a succeeding lot carried into a heating part in the fourth transport cycle from being transported out of the heating part in the next or fifth transport cycle, thereby preventing interference between the transport of substrates belonging to the succeeding lot and the transport of substrates belonging to a preceding lot. If interference is likely to occur between the transport of the substrates belonging to the succeeding lot and the transport of the substrates belonging to the preceding lot, the cell controller causes the substrates belonging to the succeeding lot not to be transported but to remain in processing units. This allows the transport of the substrates belonging to the succeeding lot in consideration of only the next transport cycle.

Abstract: Bake apparatus for use in baking a substrate, such as a semiconductor wafer, includes a chamber, a hot plate installed within the chamber, and first and second buffer plates for uniformly dispersing hot gas. The hot plate is configured to support the semiconductor wafer. The gas is injected into the chamber through an air passageway and is exhausted through an air exhaust opening. The first buffer plate is disposed within an upper part of the chamber so as to uniformly disperse the gas within the chamber. The second buffer plate is disposed above the first buffer plate. The first and second buffer plates each have a number of discharge holes by which the gas is uniformly discharged from the chamber to the exhaust opening.

Abstract: Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer on a semiconductor substrate by exposing a deposition surface of the substrate to at least a first and a second reactant sequentially introduced into a reaction chamber having an associated process temperature. The method includes removing residual first reactant from the chamber after introduction of the first reactant, removing residual second reactant from the chamber after introduction of the second reactant, and establishing a temperature differential substantially between an edge of the substrate and a center of the substrate via a purge process.

Abstract: Apparatus and a process for the continuous cycle decoration of profiled bars for shutters and frames, or other similar objects, with a carrier film of plastic material, printed with the desired decoration with sublimable inks. The process provides for a significant number of profiled bars or decorated steel sheets to be produced per unit of time.

Abstract: A method for adjusting a spacing of a leveling plate from a chamber body comprises attaching a mounting stud that includes a stud threaded surface to the chamber body. An adjustment screw is provided that has a first threaded surface threadingly engaged with the stud threaded surface. A bushing is provided that has a bushing threaded surface threadingly engaged with a second threaded surface of the adjustment screw. The bushing is movably coupled to the leveling plate. Coarse adjustment of the spacing between the leveling plate and the chamber body is made by rotating the adjustment screw with respect to the mounting stud. The bushing is fixed to the leveling plate. Fine adjustment of the spacing between the leveling plate and the chamber body is made by rotating the adjustment screw with respect to the mounting stud and the bushing.

Abstract: A high-frequency spray device is provided that is suitable for applying a coating fluid onto a substrate. The spray device can include an atomizing arrangement, a movable substrate holder, a gas supply, and one or more temperature control elements. The atomizing arrangement can include a resonance body which may have a trumpet-like shape and which can be excited to produce high-frequency vibrations that may provide a spray mist jet of the coating fluid. The spray device can further include a field arrangement capable of generating an electric and/or magnetic field in the region containing the substrate which may influence the deposition of the spray mist jet on the substrate. The spray device may also include a suction arrangement that can affect the shape of the spray jet mist and/or withdraw a portion of the spray jet mist.

Abstract: A method is provided for heating a substrate in a process chamber using a heated chuck. In accordance with the method, the substrate is lowered onto the chuck and heated to a first temperature less than a temperature of the chuck. The substrate is then raised away from the chuck, and a process is carried out on the substrate while the substrate is supported above the chuck. The substrate is then lowered back to the chuck and heated to a second temperature greater than the first temperature for further processing of the substrate.

Abstract: A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed thin film.

Abstract: The present invention comprises an apparatus and method for centering a substrate in a process chamber. In one embodiment, the apparatus comprises a substrate support having a support surface adapted to receive the placement of a substrate and a reference axis substantially perpendicular to the support surface, and a plurality of centering members extending above the support surface. Each centering member is biased into a first position and is movable to a second position by interacting with an opposing member. A movement between the first position and the second position thereby causes each centering member to releasably engage with a peripheral edge of the substrate to push the substrate in a direction toward the reference axis.

Abstract: Embodiments of the invention generally provide a substrate support assembly. In one embodiment, a substrate support assembly includes a substrate support plate, a thermal regulating plate coupled in a spaced-apart relation to the substrate support plate and a main actuator coupled in a spaced-apart relation to the thermal regulating plate. The main actuator is adapted to move the substrate support plate laterally. The substrate support assembly is configured to limit the thermal influence of the main actuator on a substrate positioned on the substrate support plate.

Abstract: There is provided a vapor-phase growth apparatus which reduces particle generation and an adhering material in epitaxial growth to make it easy to improve the productivity. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, at a head portion and which covers a side wall of the reactor, an annular holder on which a semiconductor wafer is placed. A separation distance between the gas distribution plate and the annular holder is set such that a film forming gas which flows downward from the gas supply port through the gas distribution plate is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder.

Abstract: A device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone. During annealing, the device applies (1) a basic thermal budget to the wafer, with the basic thermal budget being slightly inferior to the budget necessary to detach the layer, this budget being distributed in an even manner over the weakened zone; and (2) an additional thermal budget is also applied to the wafer locally in a set region of the weakened zone so as to initiate the detachment of the layer in this region.

Abstract: A vacuum deposition apparatus is used for deposit evaporated substance from evaporation sources (6a and 6b) on the desired position of a flexible substrate (1). While the flexible substrate (1) is carried using rollers in a vacuum, shutters (8a and 8b) are opened and closed to control the movement of the evaporated substance via openings. A film having a desired shape of pattern is formed on the flexible substrate (1) with higher controllability.

Abstract: A substrate processing system which is capable of preventing dust from becoming attached to substrates without increasing the degree of cleanliness of a clean room to a predetermined level, and also capable of increasing the substrate processing throughput without increasing the burden on workers. a plasma processing apparatus 2 that subjects semiconductor wafers W to plasma processing in a cleaned atmosphere. A SMIF 4 has a enclosure 23 that is connected to the plasma processing apparatus 2 and has a cleaned atmosphere therein, a pod stage 26 on which a pod 3 housing semiconductor wafers W is mounted, a pod mounting portion 24 that carries out removal of semiconductor wafers W from the pod 3 and housing of semiconductor wafers W into the pod 3, and a wafer cassette transfer arm 27 that transfers semiconductor wafers W between the pod stage 26 and the plasma processing apparatus 2 via the enclosure 23.

Abstract: A workpiece processing apparatus S, which comprises: a plasma generator unit 6 including a plasma generation section 18 operable to plasmatize a given gas supplied thereto, and emit the plasmatized gas therefrom; and a transport mechanism 2 adapted to support a target workpiece W in a position beneath the plasma generation section 18, wherein the plasmatized gas is emitted onto the workpiece W to carry out a given processing. The workpiece processing apparatus S further includes a setup frame 4 adapted to set up the plasma generator unit 6 to allow the plasma generation section 18 to be located over the workpiece. The plasma generator unit 6 is mounted to the setup frame 4 in a manner capable of being drawn out of a setup position where the plasma generation section 18 is positioned over the workpiece W, in a horizontal direction.

Abstract: An electrode assembly for use in a plasma processing system that includes removable rails that are adjustable for reconfiguring the electrode to accommodate substrates of different widths. The electrode assembly includes an electrode having a plurality of first connecting members. Associated with the electrode is a plurality of rails that cooperate for supporting the substrates on the electrode. Each of the rails includes a plurality of second connecting members. Each of the second connecting members is connected detachably with one of the first connecting members for removably mounting the rails with the electrode.

Abstract: A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

Abstract: An apparatus for coating surfaces of a workpiece is configured to establish a pressure gradient within internal passageways through the workpiece, so that the coating within the internal passageways exhibits intended characteristics, such as those relating to smoothness or hardness. The coating apparatus may include any or all of a number of cooperative systems, including a plasma generation system, a manipulable workpiece support system, an ionization excitation system configured to increase ionization within or around the workpiece, a biasing system for applying a selected voltage pattern to the workpiece, and a two-chamber system that enables the plasma generation to take place at a first selected pressure and the deposition to occur at a second selected pressure.

Abstract: A thin-film forming method of this invention forms a thin film on a wafer. This method is capable of improving the quality yield of wafers. The thin-film forming method includes the step of suctioning a flow of a film-forming gas from both sides of a conveyance path while conveying a wafer along the conveyance path. The conveyance path extends in a direction of passing through the gas flow.

Abstract: The present invention comprises a system and method for transferring a substrate into and out of a chamber configured to accommodate multiple substrates. In one embodiment, the system comprises a chamber housing that includes a first substrate support tray and a second substrate support tray independently movable along a vertical axis, and a substrate conveyor movable into and out of the chamber housing. The first substrate support tray and the second substrate support tray are movable to a position where a portion of the second substrate support tray is received in the first substrate support tray.

Abstract: A substrate processing system as illustrated at (1). A substrate (2) lies upon a piston (3) shown in both the loading position (3a) and in a processing position (3b). The substrate is loaded via a port (4) through a door (5). The loading area (7a), and/or the hole chamber (7) may be pumped out via a vacuum exhaust pipe (6) connected to a pump (not shown). A linear drive mechanism shown diagrammatically at (8) lifts the piston and the substrate in the chamber such that a process volume (7b) of the chamber is defined with poor gas conduction between the piston and the walls of the chamber.

Abstract: There is provided a vacuum film deposition apparatus which forms a film on a substrate by a vacuum film deposition technique, include: substrate holding means for holding the substrate; a deposition preventing member for preventing film deposition at undesired positions within the apparatus; and contacting means for bringing the substrate or the substrate holding means and the deposition preventing member into contact with each other.

Abstract: A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.

Abstract: A plasma enhanced atomic layer deposition (PEALD) system is described, wherein the system comprises a processing space and a high vacuum, ultra-clean transfer space. During processing, the substrate to which the thin conformal film is formed is exposed to the processing space. During substrate transfer, the substrate is exposed to the high vacuum space. Processing gases are introduced sequentially and alternately to the process chamber and the pressures and gas flows within, to and from, and between the process chamber and the high vacuum transfer space are controlled to keep the transfer space ultra-clean.

Abstract: An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.

Abstract: A processing system is provided that has a single chamber in communication with multiple vertical processing tubes. The multiple tubes and boats are serviced by a single robotic substrate loading mechanism. A fluid supply feeds a fluid such as a gas or a vapor to at least one selectively isolatable portion of the system of the chamber, the boat loading area or one of the multiple vertical furnace processing tubes. With selective control of the atmosphere in the vertical processing tubes within the processing chamber, the wafers are processed so as to deposit or remove material therefrom. A single control panel and single gas panel servicing the system further adds to overall efficiency.

Abstract: A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry.

Abstract: To move a substrate mounting part, on which substrates are stacked and mounted, when processing gas is supplied into a processing chamber and processing is applied to a surface of each substrate.

Abstract: Embodiments of the present invention are directed to adjusting the spacing between the substrate support and the faceplate of the gas distribution member to achieve improved uniformity of the layer formed on the substrate. One embodiment of the present invention is directed to a method of adjusting a spacing between a gas distribution member and a substrate support disposed generally opposite from the gas distribution member, wherein the substrate support is configured to support a substrate on which to form a layer with improved thickness uniformity. The method comprises forming a layer on the substrate disposed on the substrate support; measuring a thickness of the layer on the substrate; and calculating differences in thickness between a reference location on the substrate and a plurality of remaining locations on the substrate.

Abstract: A substrate treatment method for treating a substrate by supplying a treatment liquid to the substrate while rotating the substrate. The method comprises the steps of: performing a first substrate rotation process for rotating the substrate while clamping the substrate by a first clamping member set; performing a second substrate rotation process after the first substrate rotation step for rotating the substrate while clamping the substrate by the first clamping member set and a second clamping member set provided separately from the first clamping member set; and performing a third substrate rotation process after the second substrate rotation step by unclamping the substrate from the first clamping member set for rotating the substrate while clamping the substrate by the second clamping member set.

Abstract: Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system includes a process chamber with a peripheral sidewall, partitions that divide a processing space inside the process chamber into at least first and second compartments, and a platter that supports substrates within the processing space. The platter rotates the substrates relative to the stationary peripheral sidewall and compartments. The first compartment receives a process material used to deposit a layer on each of the substrates. An injector, which injects the process material, communicates with the first compartment through the peripheral sidewall.