Abstract: The present invention relates to a process for production, shipment, and treatment of a NH4F(HF)x feedstock for local production of fluorine and NF3 for semiconductor chamber cleaning without the need for storage of large quantities of dangerous feeds and intermediate products.

Abstract: Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.

Abstract: A method for improving the wettability of a medical device is provided, the method comprising the steps of (a) providing a medical device formed from a monomer mixture comprising a hydrophilic monomer and a siloxy-containing monomer, (b) subjecting a surface of the medical device to a surface treatment, and (c) contacting the treated surface of the medical device with a wetting agent solution comprising a carboxylic acid-containing polymer or copolymer to form a carboxylic acid-containing polymeric or copolymeric layer on the treated surface of the medical device.

Abstract: An emission control device, such as a filter, is regenerated by exposure to plasma. Plasma breaks down carbon-based residues, such as soot, to enable the filter to be easily cleaned and regenerated without subjecting the filter to heat-related stress associated with thermal regeneration methods. Secondary plasma generation is used to overcome impediments caused by the presence of a metallic housing and/or metal-containing materials such as a washcoat or mesh in the filter.

Abstract: The invention teaches a multi-step method for shutting down the dry-etch process. The ICP rf power is reduced between each of these consecutive power-down steps of the dry-etch process, the complete power-down sequence consists of six steps. These six steps are executed in sequence and without interruption and form the totality of the dry-etch chamber power-down procedure.

Abstract: An EUV lithographic apparatus includes an EUV radiation source, an optical element and a cleaning device. The cleaning device includes a hydrogen radical source and a flow tube in communication with the hydrogen radical source. The cleaning device is configured to provide a flow of hydrogen radicals and the flow tube is arranged to provide a hydrogen radical flow at a predetermined position within the lithographic apparatus, for example for cleaning a collector mirror.

Abstract: A method of improving surface flame resistance of a substrate is provided. A substrate is provided. An atmosphere pressure plasma process is performed on the surface of the substrate to form an inorganic film layer on the surface of the substrate, wherein a process gas of the atmosphere plasma process includes a flame resistance precursor, a carrier gas, and a plasma ignition gas. Particularly, the flame resistance precursor is selected from a siloxane compound, an inorganic alkoxide compound and a combination thereof. The siloxane compound has a formula of Si(OCnH2(n+1))4, n=1˜5, and the inorganic alkoxide compound has a formula of A(OCmH2m+1)4, where A represents Sn, Ti, Zr, Ce and m=2.

Abstract: The present invention relates to methods and apparatus for the use of atmospheric pressure non-thermal plasma to clean and sterilize the surfaces of liquid handling devices. In one embodiment, a method of cleaning a fluid handling device includes the steps of inserting a tip of the fluid handling device into an interior of a channel through a first opening disposed at a first end of the channel, wherein a first electrode is disposed adjacent an exterior of the channel; causing a plasma to be formed within the interior of the channel; and removing the fluid handling device from the channel through the first opening.

Abstract: Disclosed is a method for monitoring an edge bead removal process for a copper metal interconnection. The method includes the steps of (a) forming a copper metal layer on a semiconductor wafer, (b) performing the edge bead removal (EBR) process of removing the copper metal layer formed in an edge area of the semiconductor wafer, and (c) determining whether copper residues exist by measuring a reflection coefficient Rc of the copper metal layer formed in a center area of the semiconductor wafer and a reflection coefficient (Rb) in the edge area of the semiconductor wafer which is subject to the edge bead removal (EBR) process.

Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.

Abstract: Plasma etch-cleaning of substrates is performed by means of a plasma discharge arrangement comprising an electron source cathode (5) and an anode arrangement (7). The anode arrangement (7) comprises on one hand an anode electrode (9) and on the other hand and electrically isolated therefrom a confinement (11). The confinement (11) has an opening (13) directed towards an area (S) of a substrate (21) to be cleaned. The electron source cathode (5) and the anode electrode (9) are electrically supplied by a supply circuit with a supply source (19). The circuit is operated electrically floating.

Abstract: A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

Abstract: A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.

Abstract: For a surface processing apparatus using a plasma, a mixed gas of a fluorine-containing gas and an oxygen gas is used as an ashing gas. A mixed gas of an oxygen gas and a fluorine-containing gas is introduced as an ashing gas. This allows the following steps to be carried out at the same time: removal of the silicon component left on the mask material surface and the mask material in the area including the cured mask layer and the like; and the removal of the carbon-based, and silicon-based deposits deposited on the inner wall of a vacuum chamber. In addition, the removal of the mask material is performed under low pressure, and in the subsequent step to a step using a mixed gas of a fluorine-containing gas and an oxygen gas, a plasma of only an oxygen gas is used. As a result, it becomes possible to reduce the damages (etching) to the film layer after etching.

Abstract: A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop clean process that removes polymer residues from the pattern resist surface. Next is an ash to remove the hardened pattern resist surface, followed by removal of the pattern resist.

Abstract: A method of cleaning a UV irradiation chamber includes steps of: (i) after completion of irradiating a substrate with UV light transmitted through an optical transmitted window provided in the UV irradiation chamber, generating radical species of a cleaning gas outside the UV irradiation chamber; and (ii) introducing the radical species from the outside of the UV irradiation chamber into the UV irradiation chamber, thereby cleaning the optical transmitted window.

Abstract: The present invention provides a microplasma jet generator capable of stably generating a microplasma jet in a microspace at atmospheric pressure with low electric power. The microplasma jet generator is driven with a VHF power supply to generate an inductively coupled microplasma jet and includes a substrate, a micro-antenna disposed on the substrate, and a discharge tube located close to the micro-antenna. The micro-antenna has a flat meandering shape with plural turns.

Abstract: A surface of a semiconductor wafer which has been lapped is ground. This removes a damage caused on the wafer surface during lapping, thereby increasing the flatness of the wafer surface. Next, the wafer is subjected to composite etching and the both surfaces are polished, i.e., subjected to mirror polishing while the wafer rear surface is slightly polished so as to obtain a single-side mirror surface wafer having a difference between the front and the rear surfaces. As compared to mere acid etching or alkali etching, it is possible to manufacture a single-side mirror surface wafer having a higher flatness.

Abstract: A method for determining the endpoint of a cleaning process in which a metallic residue is removed from an underlying surface which comprises a metal by contacting the residue with a cleaning agent which volatilizes the residue and which tends to attack the metal of the underlying surface and volatilizes it if the cleaning process is not terminated timely, and in which the metal comprising the underlying surface is more reactive with the cleaning agent than the metal of the metallic residue, the improvement which comprises terminating the cleaning process at a time when the ratio of the amount of volatilized metal to the amount of cleaning agent increases from a lower to a higher value.

Abstract: A substrate treating apparatus for stripping photoresist on a substrate includes a support part for supporting the substrate, a dry-type treating part for stripping the photoresist on the substrate, and a wet-type treating part for stripping the photoresist on the substrate. While the substrate is supported by the support part, the photoresist on the substrate is primarily stripped by means of the dry-type treating part and secondarily stripped by means of the wet-type treating part. The dry-type treating part includes a plasma supply unit configured to supply plasma onto the substrate and a moving unit configured to vary a relative position of the plasma supply unit and the substrate.

Abstract: An apparatus and method are disclosed for cleaning exhaust lines from a reaction chamber used in manufacturing semiconductor devices. In particular, an apparatus is disclosed for receiving an exhaust gas from a semiconductor processing reaction chamber, mixing said exhaust gas with a cleaning gas, exciting the mixture to a plasma state, and pumping the mixture away via an exhaust line. A vacuum pump is provided for pumping the mixture, and a scrubber may be provided to remove particulate and other matter from the gas mixture. Radio-frequency or microwave energy may be used to excite the gas mixture, and the cleaning gas may comprise argon.

Abstract: In a cleaning apparatus and a method of cleaning a chamber used in manufacturing a semiconductor device, a first plasma may be provided into a chamber to remove a first residue from an inner wall of the chamber where the first residue is attached. A second plasma may then be provided into the chamber to remove a second residue formed by the first plasma from an inside of the chamber where the second residue remains. The second residue formed by the first plasma used to clean the chamber may not pollute a semiconductor substrate located in the chamber.

Abstract: A method of fabricating a color filter array including the removal of unwanted residual color pigments. A substrate is coated with a colored photoresist layer. The photoresist layer is patterned. The substrate is then cured. A descumming step is performed after the curing step to remove the residual pigments without causing significant damage to the remaining color filter array pattern. In another embodiment, the descumming process may be used to control or manipulate the thickness of the color filter array. In another embodiment, the descumming process may be used to modify the surface of the color filter array to be more desirable for the formation of microlenses or other layers over the color filter array.

Abstract: A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.

Abstract: An in-situ plasma cleaning device (PCD) performs an atomic surface cleaning process to remove contaminants and/or to modify the cylindrical surfaces of both the target and substrate. The atomic cleaning process utilizes a plasma generated locally within the in-situ plasma cleaning device with suitable properties to clean both the target and substrate cylindrical surfaces either concurrently or separately. Moreover, the in-situ plasma cleaning device is designed to traverse the length of the target and the substrate cylindrical surfaces during the cleaning process.

Abstract: A method of removing organic-containing layers, such as photoresists, high temperature organic layers, or organic dielectric materials, from large surface area substrates by plasma treatment at or near atmospheric pressure, wherein said large surface area substrate is transported on a conveyor belt system during said plasma treatment. The plasma is typically principally comprised of a chemically non-reactive species, such as helium. The method can be integrated in-line with the wet strip and/or wet clean, or it can be used in a stand alone system. The apparatus for carrying out the method is also described.

Abstract: A method of treating a glass substrate for bonding. The method includes providing a glass substrate having a fritted portion of a ceramic frit material and a non-fritted portion. At least a portion of the fritted portion includes a bondable surface. The method further includes cleaning and activating the bondable surface for subsequent bonding. The cleaning and bonding steps are carried out by applying an air plasma to the bondable surface.

Abstract: The method and apparatus of the embodiments of the present invention employ an in-situ particle decontamination technique that allows for such decontamination while a wafer is a vacuum tool or deposition chamber, thereby eliminating the need for another device for performing decontamination. This in-situ decontamination is effective for particle contamination resulting, for example, from tool resident mechanical component. Furthermore, particle decontamination is performed in the presence of plasma, having a potential for helping to maximize a “self bias” voltage, under RF conditions, and is integrated into the vacuum process.

Abstract: A method for manufacturing an article having polymeric residue that is to be removed during the manufacture of the article is disclosed. The article is introduced into a controlled environment of a processing tool having one or more processing chambers. Free radicals are generated from one or more reactant gases and introduced into at least one of the one or more processing chambers where they react with the polymeric residue. A cryogenic cleaning medium is supplied into at least one of the one or more processing chambers where the cryogenic cleaning medium removes the polymeric residue present after the free radicals react with the polymeric residue. The reactant gases are selected to facilitate removal of the polymeric residue with the cryogenic cleaning medium. The cryogenic cleaning medium is supplied with a pulsating flow via a nozzle implement that sweeps across the article.

Abstract: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

Abstract: One method of performing plasma immersion ion implantation on a workpiece in a plasma reactor chamber includes initially depositing a seasoning film on the interior surfaces of the plasma reactor chamber before the workpiece is introduced, by introducing a seasoning film precursor gas into the chamber and generating a plasma within the chamber, performing plasma immersion ion implantation on the workpiece by introducing an implant species precursor gas into the chamber and generating a plasma, and then removing the workpiece from the chamber and removing the seasoning film from the chamber interior surfaces.

Abstract: A method of self-cleaning a plasma reactor upon depositing a carbon-based film on a substrate a pre-selected number of times, includes: (i) exciting oxygen gas and/or nitrogen oxide gas to generate a plasma; and (ii) exposing to the plasma a carbon-based film accumulated on an upper electrode provided in the reactor and a carbon-based film accumulated on an inner wall of the reactor.

Abstract: A method to prevent photoresist residues formed in an aperture is provided. The method includes using a halogen-containing plasma treatment before the aperture is filled with a photoresist. Due to the halogen-containing plasma treatment, amine components on the sidewalls of a via or contact hole or trench opening can be efficiently removed. Accordingly, photoresist residues or via poison can be avoided.

Abstract: A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.

Abstract: A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.

Abstract: Example embodiments relate to an apparatus and method for manufacturing a semiconductor device. Other example embodiments relate to a plasma processing apparatus having an in-situ cleaning function and a method of using the same. The plasma processing apparatus may include an outer chamber, an inner chamber installed in the outer chamber, a gas supply unit for supplying a process gas or a cleaning gas into the inner chamber, an electrode positioned in the inner chamber, an electrode plasma power supply for applying power to the electrode, a first flexible member connecting the inner chamber and the outer chamber and having a first connector therein electrically connected to the inner chamber and/or a first chamber plasma power supply connected to the first connector and applying power to the inner chamber through the first connector.

Abstract: A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.

Abstract: One aspect of the invention relates to a method of cleaning high density capacitors. According to the method, the capacitors are cleaned with a plasma that includes fluorine-containing radicals. The plasma removes a small layer from the capacitors, including their sidewalls, and thereby removes surface contaminants. The method is effective even when the capacitors include hard-to-etch dielectric materials, such as tantalum and hafnium oxides. In a preferred embodiment, the plasma clean is combined with a solvent clean.

Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.

Abstract: A plasma etch process includes a plasma etch step performed with a photoresist mask on a workpiece using a polymerizing etch process gas that produces in the plasma polymerizing species which accumulate as a protective polymer layer on the surface of said photoresist mask during the etch step, the process including the following steps performed in the same chamber after the etch step and prior to removing the photoresist mask: (a) removing residue of the type including polymer material from chamber surfaces including a ceiling of said chamber, by coupling RF plasma source power into the chamber while coupling substantially no RF plasma bias power into the chamber, and introducing a hydrogen-containing gas into the chamber, until said residue is removed from the chamber surfaces; (b) removing the protective polymer layer from the surface of the photoresist mask, by coupling RF plasma bias power into the chamber while coupling substantially no RF plasma source power into the chamber, and introducing into the

Abstract: A dry cleaning method for an apparatus for depositing a thin film that deposits an Al-containing metal film and an Al-containing metal nitride film is provided. The method includes maintaining a temperature inside of chamber of the apparatus for depositing a thin film at 430° C. or higher and cleaning the inside of the chamber by supplying a cleaning gas including Cl2 into the chamber. When it is difficult to maintain the temperature inside the chamber at 430° C. or higher, the method includes cleaning the inside of the chamber by using a cleaning gas including Cl2 plasma. Accordingly, the apparatus for depositing the thin film that deposits a titanium aluminum nitride (TiAlN) film and a similar type thin film can be effectively cleaned without having remaining products and particles.

Abstract: In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about <100 ?/min). The silicon-containing surface is exposed to an etching gas that contains an etchant, a silicon source and a carrier gas. Preferably, the etchant is chlorine gas so that a relatively low temperature (e.g., <800° C.) is used during etching or smoothing processes. In another embodiment of the invention, a method for etching a silicon-containing surface during a fast etch process (e.g., about >100 ?/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. The silicon-containing surface is exposed to an etching gas that contains an etchant, preferably chlorine, a carrier gas and an optional silicon source.

Abstract: A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.

Abstract: A substrate surface cleaning liquid medium and a cleaning method using the cleaning liquid medium are capable of removing finely particulate contaminants more efficiently than conventional techniques from substrates for devices in the production of semiconductor devices, display devices, etc., which cleaning liquid medium contains the following ingredients (A), (B), (C), and (D), has a pH of 9 or higher, and a content of ingredient (C) of 0.01 to 4% by weight: (A) an ethylene oxide addition type surfactant which has an optionally substituted hydrocarbon group and a polyoxyethylene group in the same molecular structure and in which the ratio of the number of carbon atoms contained in the hydrocarbon group (m) to the number of oxyethylene groups in the polyoxyethylene group (n), m/n, is m/n?1.5, (B) an alkali ingredient, (C) hydrogen peroxide, and (D) water.

Abstract: There is provided a method of forming a thin film for providing improved fabrication productivity. The method includes introducing a semiconductor substrate into a process chamber. A process thin film is formed on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed. The semiconductor substrate is removed from the process chamber. A stress relief layer is formed on the chamber coating layer. After all of the above operations are repeatedly performed at least one time, an in-situ cleaning is performed on the chamber coating layer and the stress relief layer, which are alternately formed in stack on the inner walls of the process chamber.

Abstract: An embodiment of the invention is a method of cleaning a material stack 2 that has a hard mask top layer 8. The method involves cleaning the material stack 2 with a fluorine-based plasma etch. The method further involves rinsing the material stack 2 with a wet clean process.

Abstract: In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency voltages of pulse waves having mutually inverted waveforms are applied to an upper electrode and a lower electrode, and the inversion interval of the pulse wave can be arbitrarily changed, the interior of the reaction chamber is dry cleaned.

Abstract: A system is disclosed for protecting an internal EUV light source component from ions generated at a plasma formation site. In one aspect, the system may comprise a plurality of foil plates and an arrangement for generating a magnetic field to deflect ions into one of the foil plate surfaces. In another aspect, an electrostatic grid may be positioned for interaction with ions to reduce ion energy, and a magnetic field may be used to deflect the reduced energy ions onto paths wherein the ions do not strike the internal component. In yet another aspect, a grid may be connected to a circuit tuned to a resonant frequency to reduce ion energy. For example, the resonant frequency may be substantially equal to an inverse of a time difference between the time when electrons reach the grid and a subsequent time when ions reach the grid.

Abstract: A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an oxygen containing plasma; performing a second plasma process comprising an argon containing plasma; and, performing a third plasma process comprising a fluorine containing plasma.

Abstract: A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent such that the rate of etching can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the oxidizing and reducing agents, and the number of etching phases.