Abstract: A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer.

Abstract: This invention relates to a method of processing substrates including: (a) etching, in a chamber, a generally vertical structure in a substrate using a cyclic process including an etch step using a reactive etch gas and a deposition step for depositing a protective polymer on to the side walls of that part of the structure which has already been etched by a preceding etch step or steps; and (b) cleaning, in the absence of any substrate, the chamber of material deposited thereon by the performance of the deposition step in step (a) characterized in that following the cleaning of the deposition derived material, the chamber is cleaned of material derived from the etchant gas by exposing the chamber to a plasma containing a mixture of O2 and at least the active element of elements of the etchant gas.

Abstract: To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

Abstract: A coating removing device includes a coating thickness gauge configured for detecting a thickness of a coating layer formed on a surface of a article. A controller configured for determining an intensity of a laser beam needed to be emitted according to the thickness of the coating layer detected by the coating thickness gauge. In addition, a laser emitter emits the laser beam to the coating layer to remove the coating layer, the laser beam having the intensity determined according to the thickness of the coating layer. The intensity and energy of the laser beam arrived the surface of the article is changed over the coating thickness on the surface, the coated adhesive layer of the PCB is removed, and the appearance of the PCB will not be damaged.

Abstract: An ultrasonic cleaning method for cleaning an object in a solution having a gas dissolved therein includes irradiating ultrasonic waves to the solution having a first dissolved gas concentration. While the ultrasonic waves are being irradiated to the solution, a dissolved gas concentration in the solution is changed from the first dissolved gas concentration to a second dissolved gas concentration that is lower than the first dissolved gas concentration such that sonoluminescence occurs.

Abstract: A process for surface preparation of a substrate (2), which comprises introducing or running a substrate (2) into a reaction chamber (6, 106). A dielectric barrier (14, 114) is placed between electrodes (1, 10, 110). A high-frequency electrical voltage is generated, to generate filamentary plasma (12, 112). Molecules (8, 108) are introduced into the reaction chamber (6, 106). Upon contact with the plasma, they generate active species typical of reacting with the surface of the substrate. An adjustable inductor (L) placed in parallel with the inductor of the installation is employed to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112).

Abstract: The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank 12. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank 12, so that the substrate to be processed W is subjected to an ultrasonic cleaning process. While the substrate to be processed is being cleaned, a dissolved gas concentration of a gas dissolved in the cleaning liquid contained in the cleaning tank is changed.

Abstract: The invention relates to a glass substrate cleaning apparatus and cleaning method. The glass substrate cleaning apparatus of the present invention includes a cleaning trough and first frequency generators for transmitting ultrasonic waves of a first frequency and second frequency generators for transmitting ultrasonic waves of a second frequency disposed at two sides of the cleaning trough. In the present invention, a cost is reduced and a good cleaning effect is reached by using the ultrasonic waves of different frequencies to clean a glass substrate.

Abstract: A system for removing objects from a surface is disclosed. The system may include at least one sensor, a controller, and at least one vibration motor. The sensor is configured to detect an object on the surface and to generate a signal indicative of the object characteristics. The controller may be operatively coupled to the sensor. The controller can receive the generated signal indicative of the object characteristics, and then determine a desired frequency and amplitude of vibration to apply to the surface based on the object characteristics. At least one vibration motor may be in communication with the controller and configured to apply the desired frequency and amplitude of vibration to the surface.

Abstract: A foreign substance removing apparatus includes a mounting table for mounting and rotating a substrate; and a laser beam irradiation unit for removing foreign substances attached to a surface of the substrate by irradiating foreign substance cleaning laser beam onto the substrate mounted and rotated on the mounting table. In the foreign substance removing apparatus, the laser beam irradiation unit irradiates laser beam having an elongate shaped irradiation cross section onto the surface of the substrate.

Abstract: Exemplary surface debris removal systems and methods are operable to remove debris from a signal transmitting/receiving surface. An embodiment provides power to, and then removes power from, a conductive memory wire that is secured to a moveable portion of a two-position snap spring. In response to providing the power to the conductive memory wire, a length of the conductive memory wire decreases so that the moveable portion of the two-position snap spring is pulled from an extended position to a retracted position. When power is removed from the conductive memory wire, the moveable portion of the two-position snap spring moves from the retracted position to the extended position. In response to the moving of the moveable portion of the two-position snap spring from the retracted position to the extended position, an energy is generated and transferred to the surface that dislodges the debris from the surface.

Abstract: An electrostatic chuck cleaning process that cleans an electrostatic chuck, equipped in a chamber, for chucking and holding a substrate. This method has a plasma etching process that performs plasma etching on the electrostatic chuck, a substrate mounting process that mounts a substrate on the electrostatic chuck that was subjected to plasma etching in the plasma etching process, and a substrate removal process that removes the substrate that was mounted on the electrostatic chuck in the substrate mounting process.

Abstract: Methods for cleaning a side edge of a thin film photovoltaic substrate utilizing a laser are provided. The method can include transporting the substrate in a machine direction to move the substrate past a first laser source, and focusing a first laser beam generated by the first laser source onto the side edge of the substrate such that the laser beam removes the thin film present on the side edge of the substrate. An apparatus is also generally provided for cleaning a first side edge and a second side edge of a thin film photovoltaic substrate.

Abstract: This description relates to a wafer debonding and cleaning apparatus including an automatic wafer handling module. The automatic wafer handling module loads a semiconductor wafer into a wafer debonding module for a debonding process. The automatic wafer handling module removes the semiconductor wafer from the debonding module and loads the semiconductor wafer into a wafer cleaning module for a cleaning process.

Abstract: An ultrasonic cleaning device is provided which can easily cope with an increase in a diameter of a cleaning surface of an object to be cleaned. An ultrasonic cleaning device according to the present invention includes an ultrasonic transducer 13 for providing ultrasonic energy to a propagation liquid 15, an ultrasonic propagation tube 12 for flowing the propagation liquid provided with the ultrasonic energy by the ultrasonic transducer, a holding mechanism disposed below the ultrasonic propagation tube for holding an object to be cleaned 21, and a cleaning liquid supply mechanism for supplying a cleaning liquid to a cleaning surface of the object to be cleaned held by the holding mechanism, and the ultrasonic propagation tube 12 is disposed so that a side surface thereof may contact a liquid film 19 of the cleaning liquid formed on the cleaning surface by supplying the cleaning liquid to the cleaning surface by the cleaning liquid supply mechanism.

Abstract: The present invention is concerned with methods and apparatus for cleaning the surface of an ion source in a mass spectrometer, for example an electrode of a MALDI ion source. The method includes directing UV light onto the surface to desorb contaminant material. The UV light source can be a laser and a moving reflecting surface can be used to direct the light on to the surface.

Abstract: A method of cleaning multilayer copper wirings in ultra large scale integrated circuits after chemical-mechanical polishing, the method including: a) preparing a cleaning solution, the cleaning solution including between 0.1 and 5 wt. % of a nonionic surfactant, between 0.1 and 7 wt. % of a corrosion inhibitor, and between 0.1 and 0.6 wt. % of a chelating agent in deionized water; b) adjusting the pH value of the cleaning solution to between 7 and 8 using triethanolamine; c) during the production of ULSI, after the chemical-mechanical polishing step, washing the multilayer copper wirings with the cleaning solution at a flow rate of between 500 and 5000 mL/min for between 0.5 and 1 min; d) ultrasonic washing in the presence of deionized water under following conditions: 60 Hz frequency of ultrasound, 50° C. temperature, and between 0.5 and 1 min ultrasonic time; and e) drying the multilayer copper wirings.

Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process, comprising using an aqua regia cleaning solution (comprising a mixture of nitric acid and hydrochloric acid) with microwave assisted heating. Low boiling temperature of hydrochloric acid prevents heating the aqua regia solution to a high temperature, impeding the effectiveness of post silicidation nickel and platinum residue removal. Therefore, embodiments of the invention provide a microwave assisted heating of the substrate in an aqua regia solution, selectively heating platinum residues without significantly increasing the temperature of the aqua regia solution, rendering platinum residues to be more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract: A method for wet treatment of wafers includes a first plate and a second plate substantially parallel to the first plate, and a wafer is held between the first and the second plate substantially parallel. A first dispenser introduces fluid into a first gap between the first plate and the wafer when being treated, and a second dispenser introduces fluid into a second gap between the second plate and the wafer when being treated. At least one vibrating element is acoustically coupled to at least the second plate, and a holder and the second plate are rotated relative to each other about an axis substantially perpendicular to the second plate.

Abstract: A method of cleaning a surface of a component of a plasma chamber, wherein the component has an aluminum or anodized aluminum surface, the method including the steps of: soaking the surface of the component in a diluted sulfuric peroxide (DSP) solution; spray rinsing the surface with water following removal of the surface from the DSP solution; soaking the surface in a dilute nitric acid (HNO3) solution; spray rinsing the surface with water following removal of the surface from the dilute nitric acid solution; and repeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface.

Abstract: A pulse detonation system is provided for delivering a shock wave to an operating device to clean accumulation or buildup of particles within the operating device. The pulse detonation system includes a support structure, a camera apparatus and a pulse detonation chamber. The pulse detonation chamber is supported by the support structure and extends into the interior portion of the operating device. The pulse detonation chamber receives fuel and air to create a shock wave. The shock wave exits the pulse detonation chamber and interacts with the buildup of particles in the operating device. The pulse detonation chamber includes a plurality of pulse detonation tubes that are detachable and portable, such that the pulse detonation system can be detached and moved from a first location to a second location.

Abstract: A method for tracking a scraper within a pipeline has the steps of moving the scraper along a path in the pipeline such that the scraper produces an acoustic signal, sensing the acoustic signal as produced by the scraper by at least a pair of acoustic sensors positioned in spaced relation along the pipeline, time-stamping the sensed acoustic signal, and calculating a location of the scraper based on the time-stamped acoustic signal. The acoustic signal can be a transient pressure wave produced by the movement of the scraper or a pressure signal produced by a mechanism positioned on the scraper.

Abstract: This disclosure relates to a post-etch treating method. An opening is formed by etching a stacked structure of a dielectric layer, an intermediate layer and a metal hard mask layer arranged in order from bottom to top. The treating method sequentially comprises steps of: performing a first cleaning process on the stacked structure with the opening so as to remove at least a part of the metal hard mask layer; and performing a second cleaning process on the stacked structure with the opening so as to remove etching residues.

Abstract: A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.

Abstract: method and system for decomposing organic compounds in wastewater that uses an interaction between an acid, a permeable structure and ultra violet light to accelerate the decomposition of organic compounds in wastewater. This invention can be used to decomposing organic compounds in industrial process and wastewater discharges, municipal drinking water supplies, food processing rinse water and commercial and residential water purification systems.

Abstract: The present invention discloses a cleaning process, utilizing a gas flow to an interior of a hollow object in a fluid ambient. After capping the object to seal off the interior volume, gas is introduced to the object interior. The pressure is built up within the object interior, loosening the seal. The gas pressure is released, and the seal returns. The vibration caused by the cycling of gas pressure can be used to perform cleaning of particles adhering to the object. The cleaning process can be used in a combinatorial processing system, enabling in-situ cleaning of process reactor assemblies.

Abstract: A dampening fluid useful in offset ink printing applications contains water and a surfactant whose structure can be altered. The alteration in structure aids in reducing accumulation of the surfactant on the surface of an imaging member. The surfactant can be decomposed, switched between cis-trans states, or polymerizable with ink that is subsequently placed on the surface.

Abstract: A system and method for securing tokens to be cleaned includes a tray with a curved surface defining a channel extending along a first direction and spacers projecting from the curved surface into the channel. The spacers are disposed at 5 regular intervals along the first direction. The curved surface also has at least one opening. The tokens may be inserted into the channel between adjacent spacers and the tray holding the tokens can be submerged into a cleaning liquid. Identical trays containing tokens can also be stacked and together submerged into the cleaning liquid. The tray holding the tokens can be placed on a drying surface that 10 has a drainage hole, and wetness remaining on the tokens can be sucked through the hole in the channel and the drainage hole by a vacuum or blown through the hole in the channel and drainage hole by an air blower.

Abstract: A method and system for a tone generator assembly are provided. The tone generator assembly includes a resonance chamber that includes a first end and a second end and a body extending therebetween. The body surrounds a cavity therein, wherein the first end includes a resonance chamber opening in flow communication with the cavity. The tone generator assembly also includes a nozzle having a bore therethrough. The bore includes an inlet opening configured to receive a flow of relatively high pressure fluid and an outlet opening coupled in flow communication with the inlet opening and configured to discharge an underexpanded jet of fluid when the flow of relatively high pressure fluid is received at the inlet opening. The resonance chamber and the nozzle are positioned relatively and sized to facilitate emitting a tone from the tone generator assembly having a frequency less than two kilohertz.

Abstract: A method of manufacturing a magnetic disk glass substrate has a cleaning step of cleaning the glass substrate. In the cleaning step, the cleaning is performed under an acidic condition using a cleaning liquid containing oxalate ions and bivalent iron ions. In parallel with the cleaning step or before or after the cleaning step, trivalent iron ions generated by oxidation of the bivalent iron ions contained in the cleaning liquid are reduced by ultraviolet irradiation.

Abstract: Methods and apparatus for cleaning a surgical instrument during a surgical procedure insert at least the portion of the surgical instrument that is to be cleaned into a vessel containing a liquid and applying ultrasonic vibrations to the liquid within the vessel to generate cavitation bubbles in the liquid. The bubbles formed by cavitation of the liquid are very effective at removing debris from the surgical instrument, particularly from crevices and difficult-to-reach areas of the surgical instrument. The liquid also can be heated by a heating element of the vessel or by activating a heat-generating transducer of the surgical instrument being cleaned, or both.

Abstract: In an apparatus and method for treating a wafer-shaped article, a spin chuck is provided for holding a wafer-shaped article in a predetermined orientation wherein a lower surface of the wafer-shaped article is spaced a predetermined distance from an upper surface of the spin chuck. A heating assembly comprising at least one infrared heater is mounted above the upper surface of the spin chuck and below a wafer-shaped article when mounted on the spin chuck. The heating assembly is stationary in relation to rotation of the spin chuck.

Abstract: New methods of weakening the bonds between a bonded pair of wafers or substrates are provided. The substrates are preferably bonded at their outer peripheries. When it is desired to separate the substrates, they are contacted with a solvent system suitable for weakening, softening, and/or dissolving the bonding composition at their outer peripheries. Megasonic energy is simultaneously directed at the substrates (and preferably the bonding composition itself), so as to increase solvent penetration into the composition, thus decreasing the time needed for substrate separation and increasing throughput.

Abstract: Imprint lithography system may provide for an energy source for solidification of material positioned between a template and a substrate. Additionally, the energy source and/or an additional energy source may be used to clean contaminants from the template and/or the substrate.

Abstract: An antifouling device (1) adapted to be fastened to a duct (10) including a fluid and to be connected to a generator apparatus (20) for generation of an alternating electrical signal; the antifouling device (1) comprises at least one piezoelectric unit (2) adapted to convert the alternating electrical signal into mechanical vibrations, and a diffuser (3) adapted to be interposed between the duct (10) and the piezoelectric unit (2) so as to transmit the mechanical vibrations from the piezoelectric unit (2) to the duct (10) and create cavitation of at least part of the fluid.

Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

Abstract: An ultrasonic cleaning method of using ultrasonic vibrations to clean an object that is immersed in a cleaning liquid in a cleaning tank is provided. The method includes generating a frequency modulated signal including at least two frequency modulated portions having modulation widths different from each other with a single frequency as a center frequency, such that among the at least two frequency modulated portions a frequency modulated portion having a smaller modulation width is generated at a timing when a frequency modulated portion having a larger modulation width reaches the center frequency. The method further includes generating the ultrasonic vibrations based on the frequency modulated signal and transferring the ultrasonic vibrations to the cleaning tank to clean the object.

Abstract: The invention concerns a method for machine cleaning and disinfecting objects, in particular medical and/or dental instruments and/or work equipment. According to the invention, the objects are ultrasonically cleaned in water in a working area of a cleaning and disinfection system, wherein after cleaning of the objects the water is removed from the working area up to a defined residual volume, The residual volume of water remaining in the working area is subsequently converted into water vapour by means of a heating element arranged in the working area (18). The objects (40) are thermally disinfected in the working area by means of the water vapour, wherein a vapour atmosphere in the working area s subsequently removed from the working area for drying the objects.

Abstract: Provided are a range of ultrasonic cleaning assemblies that include radiating surfaces activated by corresponding arrays of planar transducers configured to increase the power applied to a reduced volume of fluid associated with a fuel assembly, thereby increasing that applied power density for improved cleaning. The individual ultrasonic cleaning assemblies may be arranged in a variety of modules that, in turn, may be combined to increase the length of the cleaning zone and provide variations in the power density applied to improve the cleaning uniformity.

Abstract: Embodiments of the present invention generally relate to a method and apparatus for ex-situ cleaning of a chamber component part. In one embodiment, a system for cleaning component parts in a cleaning chemistry is provided. The system comprises a wet bench set-up comprising a cleaning vessel assembly for holding one or more component parts to be cleaned during a cleaning process and a detachable cleaning cart detachably coupled with the cleaning vessel assembly for supplying one or more cleaning chemistries to the cleaning vessel assembly during the cleaning process.

Abstract: A process for treating a substrate comprised of sorptive material is provided herein. The sorptive material may be an absorbent synthetic material such as polyester. The material is designed to be used for cleaning surfaces in an ultraclean environment. The process first comprises unwinding a roll of sorptive material as a substrate into a cleaning system. The cleaning system utilizes several sections. These include a pre-washing section, an acoustic energy washing section, and a drying section. Preferably, the process of moving the substrate through the cleaning system is continuous. The acoustic energy washing section employs one or more acoustic energy generators. In one aspect, the process also includes cutting the substrate into sections to form wipers after moving the substrate through the drying section. Thereafter, the wipers are placed into bag, and the bag is sealed. An integrated processing or treating system for a sorptive material is also provided herein.

Abstract: A substrate processing method includes a first process (step S12 to step S16) of forming a first resist pattern by exposing a substrate having thereon a first resist film to lights, developing the exposed substrate and cleaning the developed substrate; and a second process (step S17 to step S20) of forming a second resist pattern by forming a second resist film on the substrate having thereon the first resist pattern, exposing the substrate having thereon the second resist film to lights, and developing the exposed substrate. A first processing condition is determined based on first data showing a relationship between a first processing condition under which a cleaning process is performed on the substrate in the first process (step S16) and a line width of the second resist pattern, and the first process (step S16) is performed on the substrate under the determined first processing condition.

Abstract: A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: A semiconductor device manufacturing method includes loading plural dry-etched wafers one by one in a container having a side door so as to be disposed substantially horizontally and in layers vertically therein; and blowing out a purge gas horizontally to those wafers loaded in the container for 30 sec or more after all the subject wafers are loaded in the container while the side door is open.

Abstract: The present invention provides a process for photocatalytically treating stains of chilly and turmeric caused on kitchen tiles and platforms by coating a thin film of photocatalyst made of a semiconductor such as titanium dioxide uniformly dispersed in dilute silica sol thereon and using a light source such as a fluorescent lamp to irradiate and photoexcite the photo catalytic thin film by the small amount of UV radiation included in the fluorescent light, resulting in photo decomposition and auto-cleaning of the stains.

Abstract: Embodiments of the invention relate to methods and apparatuses for forming films using CVD. One or more method and apparatus embodiments include preventing the formation of bonds and/or breaking bonds that permit polymers to form in an exhaust line of a CVD apparatus.

Abstract: To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.

Abstract: An apparatus for the plasma treatment of molds (2), in particular for contact lens molds, comprises a treatment chamber (50), in which a first electrode (51) is arranged facing a carrier (1;4) for carrying the molds (2) to be treated. The carrier (1;4) forms the second electrode (52) and comprises a first metal plate (10;40) having holes (100;400) therein and a second metal plate (11;41) which is arranged spaced apart from the first metal plate (10;40), and which is connected to the first metal plate (10;40) in an electrically conductive manner (12,13;43). The molds (2) are arranged on the second metal plate (11;41) with their molding surfaces (210) facing towards the first electrode (51) and are exposable to plasma through the holes (100;400) in the first metal plate (10;40).

Abstract: A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.