Abstract: A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process.

Abstract: An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.

Abstract: A load lock system includes a first load lock defining a first chamber, a second load lock defining a second chamber, and a vacuum pumping system to vacuum pump the first and second chambers. The vacuum pumping system includes a high vacuum pump, a first valve to connect the first chamber to an inlet of the high vacuum pump in a first pumping mode, and a second valve to connect the second chamber to the inlet of the high vacuum pump in a second pumping mode. The high vacuum pump may be a turbomolecular pump. The vacuum pumping system may include a valve manifold block located between the first and second load locks. The first and second valves may be mounted in the valve manifold block. The vacuum pumping system may further include a shared water pump.

Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

Abstract: Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.

Abstract: Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region.

Abstract: An apparatus for gas distribution includes a top dome-cover, a first gas distribution plate and a bottom plate bonded each other to deliver different gases onto substrates supporting by a susceptor. The first gas distribution plate is provided with a plurality of first island protrusions formed by intersecting a plurality of first channels and each first island protrusions has a bypass through hole so that different gases can be individually delivered via independent gas pathways formed by those through holes or those channels to prevent those different gases premix before processing on those substrates. Additionally, a fluid distribution plate disposed between the first gas distribution plate and the bottom plate may be adapted for heat dissipation.

Abstract: In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

Abstract: Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

Abstract: A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

Abstract: In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate.

Abstract: The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.

Abstract: A showerhead of a plasma reactor has an internal plenum comprising a showerhead floor and a plurality of gas injection holes through the floor of the showerhead. A path splitting manifold is immersed inside the plenum and comprises a gas supply inlet, plural gas outlets, and a plurality of channels comprising plural paths of equal lengths between the inlet and respective ones of the plural outlets.

Abstract: A system is provided for etching patterned media disks. A movable non-contact electrode is utilized to perform sputter etch. The electrode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors.

Abstract: A chamber component configured to be coupled to a process chamber and a method of fabricating the chamber component is described. The chamber component comprises a chamber element comprising a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the chamber element comprises a reentrant cavity formed in the first surface and a conduit having an inlet coupled to the reentrant cavity and an outlet coupled to the second surface. Furthermore, the chamber component comprises an insertable member configured to couple with the reentrant cavity, the insertable member having one or more passages formed there through and each of the one or more passages are aligned off-axis from the conduit, wherein the one or more passages are configured to receive a process fluid on the supply side and the conduit is configured to distribute the process fluid from the one or more passages on the process side.

Abstract: An electrode assembly for a plasma processing apparatus includes a backing member secured to an electrode. First fastener members mounted in apertures in the backing member cooperate with second fastener members to hold the electrode assembly to a support member, such as a temperature-controlled top plate in a plasma processing chamber.

Abstract: A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck.

Abstract: A plasma processing chamber, which includes an upper electrode assembly, a lower electrode assembly, and a plasma confinement assembly. The upper electrode assembly includes an upper electrode, a backing member, the backing member attachable to an upper surface of the upper electrode, and a guard ring surrounding an outer surface of the backing member and located above the upper surface of the upper electrode, wherein the guard ring is configured to provide an inner gap between the outer surface of the backing member and an inner periphery of the guard ring. The lower electrode assembly is adapted to receive a semiconductor substrate. The plasma confinement assembly is separated from an outer periphery of the upper electrode and the backing member by the guard ring.

Abstract: A CVD apparatus comprising an optical unit detecting the mass of contaminants adhering to an inner surface of a CVD reactor by irradiating an inner surface of the reactor with light having monochromaticity through an optical window provided on an inner wall of the reactor and receiving its reflected light is provided.

Abstract: Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member.

Abstract: A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.

Abstract: A method and system for controlling the temperatures of at least one gas in a plasma processing environment prior to the at least one gas entering a process chamber. This temperature control may vary at different spatial regions of a showerhead assembly (either an individual gas species or mixed gas species). According to one embodiment, an in-line heat exchanger alters (i.e., increases or decreases) the temperature of passing gas species (either high- or low-density) prior to entering a process chamber, temperature change of the gases is measured by determining a temperature of the gas both upon entrance into the in-line heat exchanger assembly and upon exit.

Abstract: In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

Abstract: The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware, wherein the silicon-based showerhead electrode comprises a plurality of partial recesses formed in the backside of the silicon-based showerhead electrode and backside inserts positioned in the partial recesses. The thermal control plate comprises securing hardware passages configured to permit securing hardware to access the backside inserts.

Abstract: A temperature control module for a showerhead electrode assembly for a semiconductor material plasma processing chamber includes a heater plate adapted to be secured to a top surface of a top electrode of the showerhead electrode assembly, and which supplies heat to the top electrode to control the temperature of the top electrode; a cooling plate adapted to be secured to and thermally isolated from a surface of a top plate of the showerhead electrode assembly, and to cool the heater plate and control heat conduction between the top electrode and heater plate; and at least one thermal choke adapted to control heat conduction between the heater plate and cooling plate.

Abstract: A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the plasma generator, and sucking a by-product of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as a surface cleansing means under atmospheric conditions.

Abstract: A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Abstract: An apparatus and method for forming a self-limiting etchable layer on a workpiece. The apparatus comprises: a chamber adapted for holding a workpiece; a distribution plate within the chamber, wherein the distribution plate includes channels for introducing a first fluid (e.g., ammonia) and a second fluid (e.g., hydrogen fluoride) into the apparatus, such that the first and second fluids may be directed into the apparatus at the angles ?1 and ?2 with respect to an exposed surface of the distribution plate, wherein the channels for each type of fluid may be arranged respectively in alternating rings, and wherein each angle ?1 and ?2 are at least 45 degrees and less than 90 degrees, offset by ?2 and ?2 and ?1 and ?1 by analogy. The method for forming the etchable layer on the workpiece comprises introducing a first fluid and a second fluid into the chamber through the channels.

Abstract: A plasma etching method plasma-etches an etching target film by using a photoresist film as a mask. The plasma etching method includes loading a target object to be processed into a processing chamber where an upper and a lower electrode are provided to face each other, the target object having the etching target film and the photoresist film in which an opening is formed; introducing into the processing chamber a processing gas containing CF4 gas, CH2F2 gas and CxFy gas, wherein x/y?0.5; and generating a plasma of the processing gas by applying a high frequency power to at least one of the upper and the lower electrode. The method further includes, by the plasma, etching the etching target film introduced through the opening formed in the photoresist film while reducing the opening size the opening.

Abstract: Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.

Abstract: A first channel is formed in the side of a first diffusion plate which is on that side of a gas inlet tube and a recess is formed in the side which is on that side of an electrode plate. The first channel and the recess communicate with each other through a plurality of inlet ports. The first channel and the inlet ports form a gas flow passage L which leads to the recess from the gas inlet tube. As a process gas supplied from the gas inlet tube passes through the gas flow passage L, it is supplied, dispersed, to a hollow portion formed between the recess and the electrode plate.

Abstract: A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.

Abstract: A substrate processing apparatus includes a shower head having a shower plate of which gas injection portion is formed by a two layer structure made of metal and ceramic. The shower head has an upper plate made of a metal and having a gas inlet hole; a lower plate made of a metal and having a plurality of gas through holes; a gas diffusion space formed between the upper plate and the lower plate; and a cover member made of ceramic and having a plurality of gas injection openings positioned to correspond to the gas through holes, for covering an entire bottom surface of the lower plate. The shower head further includes a plurality of thermally conductive members provided to connect the upper plate with the lower plate in the gas diffusion space for transferring heat generated by processing upward.

Abstract: Disclosed is a shower plate which is formed with a large number of process-gas blowing holes having a simple structure, high machinability and high dimensional accuracy without the risk of unevenness in blowing of a process gas and outbreak of particles, while ensuring constant quality and interchangeability. Through a press forming process, a powder for a ceramic material with a low dielectric constant is formed into a disc-shaped compact having dimensions determined in consideration of a sintering shrinkage value and a machining value. A gas inlet passage 3 and a large number of blowing holes 2 for a compact stage are bored in the disc-shaped compact, and then the disc-shaped compact is sintered. Subsequently, the gas inlet passage 3 and a main hole portion 2b in each of the blowing holes are subjected to grinding to have a surface roughness of Is or less.

Abstract: A shower plate for plasma processing, which is formed by a plurality of pipes. A pipe includes a porous material member disposed along the pipe, which has a predetermined porosity with respect to a material gas, and which has an outwardly convex shape, and a metal member faced to the porous material member and that forms a material gas flow path in combination with the porous material member. A nozzle structure capable of releasing the material gas with a spread can be realized.

Abstract: A processing gas supply hole is constituted with a gas outlet hole formed at an electrode plate and a gas injection hole formed at a processing gas supply mechanism main unit. At the gas injection hole, a processing gas having flowed in on the upstream side is injected toward the gas outlet hole through an injection opening of a nozzle portion disposed on the downstream side, so as to generate a suction force at a suction flow passage formed around the nozzle portion by taking advantage of the ejector defect.

Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact points across the backing plate; and at least one thermally and electrically conductive gasket separating the backing plate and the thermal control plate, or the backing plate and showerhead electrode, at the contact points. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

Abstract: The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, a thermally conductive gasket, and a plurality of o-rings, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a thermal interface. The thermally conductive gasket and the o-rings are positioned along this thermal interface with the o-rings separating the thermally conductive gasket from the showerhead passages such that the gasket is isolated from the showerhead passages. The gasket may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate.

Abstract: A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.

Abstract: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Abstract: A system for determining a distance between a showerhead of a semiconductor processing system and a substrate-supporting pedestal is provided. The system includes a showerhead having a showerhead surface from which reactive gas is expelled and a pedestal having a pedestal surface that faces the showerhead surface. A first capacitive plate is disposed on the pedestal surface. A second capacitive plate is disposed on the showerhead surface. A third capacitive plate disposed on one of the showerhead surface and the pedestal surface, but spaced from the first and second capacitive plates. Capacitance measurement circuitry is operably coupled to the first, second and third capacitive plates.

Abstract: A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas outlet. The baffle has an opposing first and second surfaces. First vanes are on the first surface of the baffle and direct gas across chamber surfaces. In one version, the first vanes comprise arcuate plates that curve and taper outward from the hub. Second vanes are on the second surface of the baffle and direct gas across the second surface of the baffle. In one version, a gas feed-through tube in the hub can allow a gas to bypass the first and second set of vanes.

Abstract: A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.

Abstract: Showerhead electrodes for a semiconductor material processing apparatus are disclosed. An embodiment of the showerhead electrodes includes top and bottom electrodes bonded to each other. The top electrode includes one or more plenums. The bottom electrode includes a plasma-exposed bottom surface and a plurality of gas holes in fluid communication with the plenum. Showerhead electrode assemblies including a showerhead electrode flexibly suspended from a top plate are also disclosed. The showerhead electrode assemblies can be in fluid communication with temperature-control elements spatially separated from the showerhead electrode to control the showerhead electrode temperature. Methods of processing substrates in plasma processing chambers including the showerhead electrode assemblies are also disclosed.

Abstract: A showerhead for use in a capacitively-coupled plasma chamber and made of low resistivity bulk layer coated with CVD SiC. The bulk low resitivity material may be, for example, graphite, Silicon Carbide (SiC), converted graphite, SiC+C, etc. Sintered SiC may be used as the bulk material coated with CVD SiC to provide a showerhead that is suitable for use in a capacitively-coupled plasma chamber.

Abstract: A gas supply member is disposed in a chamber of a plasma processing apparatus and has a planar surface facing an inner space of the chamber and a plurality of gas holes bored in the planar surface to supply a gas through the gas holes to the inner space. An outer periphery portion of each gas hole at the planar surface has a slant surface formed to correspond to a flow of the gas injected through each gas hole. Further, the slant surface includes at least any one of a flat surface and a curved surface. An angle formed between the slant surface and the planar surface is equal to or greater than that formed between the planar surface and a distribution of the gas injected through each gas hole.

Abstract: An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which the substrate holder is positioned. The substrate holder is configured to support a substrate so that the substrate is within a plane extending generally toward the upstream and downstream ends. The first injector component is at the upstream end of the chamber and is configured to inject a first thin gas curtain toward a substrate supported by the substrate holder. The first injector component is configured to inject the first curtain generally along a first plane that is parallel to a first side of the substrate. The second injector component is configured to inject a second thin gas curtain toward the first side of the substrate.

Abstract: A surface processing apparatus includes a process chamber including a gas ejection mechanism; an exhaust for exhausting the inside of said process chamber; and a gas supply for supplying a gas to the gas ejection mechanism. The gas ejection mechanism includes a first gas distribution mechanism for distributing the gas into a cooling or heating mechanism, including a gas distribution plate placed in the frame member, the gas distribution plate having a plurality of holes that extend therethrough, the cooling or heating mechanism having multiple gas passages that extend therethrough, the plate having a number of outlets to eject the gas into the process chamber, wherein there are more outlets in the plate than there are gas passages, and the plate is fixed to a second gas distribution mechanism with a clamping member.

Abstract: Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate.