Abstract: A gas injection system includes a diffuser to distribute a process gas in a processing chamber. The gas injection system may be utilized in a polysilicon etching system involving corrosive process gases.

Abstract: A chamber component configured to be coupled to a process chamber and a method of fabricating the chamber component is described. The chamber component comprises a chamber element comprising a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the chamber element comprises a reentrant cavity formed in the first surface and a conduit having an inlet coupled to the reentrant cavity and an outlet coupled to the second surface. Furthermore, the chamber component comprises an insertable member configured to couple with the reentrant cavity, the insertable member having one or more passages formed there through and each of the one or more passages are aligned off-axis from the conduit, wherein the one or more passages are configured to receive a process fluid on the supply side and the conduit is configured to distribute the process fluid from the one or more passages on the process side.

Abstract: Apparatus and methods for distributing gas in a semiconductor process chamber are provided. In an embodiment, a gas distributor for use in a gas processing chamber comprises a body. The body includes a baffle with a gas deflection surface to divert the flow of a gas from a first direction to a second direction. The gas deflection surface comprises a concave surface. The concave surface comprises at least about 75% of the surface area of the gas deflection surface. The concave surface substantially deflects the gas toward a chamber wall and provides decreased metal atom contamination from the baffle so that season times can be reduced.

Abstract: A filled polymer composition having improved plasma resistance is disclosed. The composition includes a particle filler dispersed in a polymer matrix. The particle filler can be Nb2O5, YF3, AlN, SiC or Si3N4 and rare earth oxides. In an embodiment, the composition is utilized as a bonding adhesive for electrostatic chuck, bonding adhesive for shower head, bonding adhesive for liner, sealing material, O-ring, or plastic component.

Abstract: Techniques of the present invention are directed to distribution of deposition gases onto a substrate. In one embodiment, a gas distributor for use in a processing chamber is provided. The gas distributor includes a body having a gas deflecting surface and a gas distributor face. The gas deflecting surface defines a cleaning gas pathway. The gas distributor face is disposed on an opposite side of the body from the gas deflecting surface and faces toward a substrate support member. The gas distributor face includes a raised step and at least one set of apertures through the raised step. The at least one set of apertures are adapted to distribute a deposition gas over a substrate positioned on the substrate support member.

Abstract: Methods and apparatus for accommodating thermal expansion of a showerhead. In a first aspect of the invention, the showerhead is movably supported by resting a rim of the showerhead on a support shelf. In a second aspect, the showerhead is suspended from the chamber wall by a plurality of hangers that are connected to the showerhead, the chamber wall, or both by pins that slide within slots so as to permit the hangers to slide radially to accommodate thermal expansion of the showerhead in the radial direction. In a third aspect, the showerhead is suspended from the wall of the vacuum chamber by a plurality of rods or flexible wires. In a fourth aspect, the showerhead is connected near its perimeter to a second material having a greater thermal expansion coefficient than the showerhead. In a fifth aspect, a heater is mounted behind the showerhead to reduce the temperature differential between the top and bottom surfaces of the showerhead or to reduce heat transfer from the workpiece to the showerhead.

Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.

Abstract: A gas-introducing system for plasma CVD and cleaning includes: a showerhead including a top plate with a gas inlet port and a shower plate; a rectifying plate installed in the interior space of the showerhead and dividing the interior space into an upper space and a lower space; a structure for inhibiting inactivation of active species of the activated cleaning gas at the rectifying plate; and a piping unit for connecting the gas inlet port of the showerhead to a remote plasma unit and a reaction gas introduction port.

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract: A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).

Abstract: A plasma system for substrate processing comprising, a conducting electrode (b, bb) on which one or more substrates (d) can be held; a second conducting electrode (a) placed adjacent but separated from the substrate holding electrode on the side away from the side where the substrates are held; and a gas mixture distribution shower head (e) placed away from the conducting electrode on the side where the substrates are held for supplying the gas mixture (f) needed for processing the substrates in a uniform manner; such that a plasma configuration initiated and established, between the conducting electrode holding the substrates and the second conducting electrode envelops the electrode holding the substrate, is kept away from the shower head activating and distributing the gas mixture through orifices (ee) in the shower head, there by providing advantages of uniformity, yield and reliability of process.

Abstract: A substrate ozone processing device includes: a substrate-carrying/heating platform; above the platform, a gas supply head made up of a main head unit bored with platform-directed vent holes, gas conduits connected at their basal ends to the gas vent holes and separated by an interspace communicating with the gas-supply-head exterior, and a plurality of coplanar facing plates perforated, top-side-to-underside, with gas-discharging through-holes receiving the distal ends of the gas conduits, and with a latticework of gaps surrounding the discharging through-holes and communicating with the interspace; and a gas supply device for supplying ozone gas to the discharging through-holes. The facing plates are of small volume such that even should heat transfer between the plates and the substrate occur, thermal equilibrium between the plates and the substrate is reached in a short time, facilitating substrate temperature management.

Abstract: A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.

Abstract: A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the reaction chamber; and a gas inlet pipe coupled to the gas inlet pore for introducing the gas into the reaction chamber. The gas inlet pipe is grounded and insulated from the gas inlet pore, wherein an insulation member is placed inside the gas inlet pipe and the gas inlet pore.

Abstract: A plasma processing system (system) for processing a substrate is provided. The system includes a gas distribution system and a gas flow control assembly coupled to the gas distribution system. The gas flow control assembly is configured to control the input gases provided by the gas distribution system. The plasma processing system also includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate. The flow rate of the first set of gases is different from a flow rate of the second set of gases.

Abstract: A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows.

Abstract: A bridge assembly includes an electrically insulating hollow tube or bridge having a pair of ends, the bridge being supported at one of the ends over the cylindrical side wall and being supported at the other of the ends over the electrode. The bridge assembly further includes a set of conductive rings surrounding the hollow tube and spaced from one another along the length of the bridge, and plural electrically resistive elements. Each of the resistive elements has a pair of flexible connectors, respective ones the resistive elements connected at their flexible connectors between respective pairs of the rings to form a series resistor assembly.

Abstract: A reactor, system including reactors, and methods for depositing thin films on microfeature workpieces comprising a reaction vessel having a chamber, a gas distributor attached to the reaction vessel, a workpiece holder in the chamber, and a side unit in the reaction vessel at a location relative to the gas distributor and/or the workpiece holder. The gas distributor has a plurality of primary outlets open to the chamber, and the workpiece holder has a process site aligned with the primary outlets. The side unit has a secondary outlet open to the chamber that operates independently of the primary outlets. One of the inner compartment, the side unit and/or the workpiece holder can be movable between a first position to form a small-volume cell for introducing the reactant gases to the microfeature workpiece and a second position to form a large volume space for purging the reactant gases.

Abstract: A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.

Abstract: A seal-protected perimeter partition valve apparatus (450) defines a vacuum and pressure sealed space (401) within a larger space (540) confining a substrate processing chamber with optimized geometry, minimized footprint and 360° substrate accessibility. A compact perimeter partitioned assembly (520) with seal protected perimeter partition valve (450) and internally contained substrate placement member (480) further provides processing system modularity and substantially minimized system footprint.

Abstract: A plasma generation apparatus is provided which includes: an apparatus main body which has a microwave generation section which generates a microwave and a plasma generation nozzle which generates and emits a plasma gas based on the energy of the microwave; a microwave detection unit which detects a microwave leaking from the apparatus main body; and a control section which stops the microwave generation section from generating a microwave if the detection unit detects a microwave.

Abstract: A showerhead electrode assembly of a plasma processing apparatus includes a thermal control plate attached to a showerhead electrode, and a top plate attached to the thermal control plate. At least one thermal bridge is provided between opposed surfaces of the thermal control plate and the top plate to allow electrical and thermal conduction between the thermal control plate and top plate. A lubricating material between the thermal bridge and the top plate minimizes galling of opposed metal surfaces due to differential thermal expansion between the top plate and thermal control plate. A heater supported by the thermal control plate cooperates with the temperature controlled top plate to maintain the showerhead electrode at a desired temperature.

Abstract: A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

Abstract: A semiconductor manufacturing apparatus that forms a carbon film on a wafer by plasma enhanced chemical vapor deposition includes a body having a top opening; a stage provided within the body for placement of the wafer; a showerhead that encloses the top opening and that introduces a deposition gas or an etch gas; and a gas delivery system including a central gas inlet that introduces gas toward a central portion of the wafer from a central portion of the showerhead, and a peripheral gas inlet that introduces gas toward a bevel of the wafer from an outer peripheral portion of the showerhead, wherein the gas delivery system, after activating the etch gas outside the body, delivers the activated etch gas toward the bevel of the wafer to selectively remove a portion of the carbon film formed on the bevel of the wafer.

Abstract: A silicon-based showerhead electrode is provided where backside inserts are positioned in backside recesses formed along the backside of the electrode. The backside inserts comprise a threaded outside diameter, a threaded inside diameter, and a tool engaging portion formed in the threaded inside diameter. The tool engaging portion is formed such that the backside insert further comprises one or more lateral shielding portions between the tool engaging portion and the threaded outside diameter to prevent a tool engaged with the tool engaging portion of the backside insert from extending beyond the threaded outside diameter of the insert. Further, the tool engaging portion of the backside insert comprises a plurality of torque-receiving slots arranged about the axis of rotation of the backside insert. The torque-receiving slots are arranged to avoid on-axis rotation of the backside insert via opposing pairs of torque receiving slots.

Abstract: A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to control a set of input gases provided by the gas distribution system. The plasma processing system further includes a first set of nozzles coupled to the gas flow control assembly and configured to supply a first set of gases for processing a first portion of the substrate. The plasma processing system further includes a second set of nozzles coupled to the gas flow control assembly and configured to supply a second set of gases for processing a second portion of the substrate.

Abstract: A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead.

Abstract: A semiconductor work piece processing reactor is described and which includes a processing chamber defining a deposition region; a pedestal which supports and moves a semiconductor work piece to be processed within the deposition region of the processing chamber; and a gas distribution assembly mounted within the processing chamber and which defines first and second reactive gas passageways which are separated from each other, and which deliver two reactant gases to a semiconductor work piece which is positioned near the gas distribution assembly.

Abstract: A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components.

Abstract: A shower head structure (26) includes a shower head main body (78) of a one-piece structure formed in a generally cup shape and having a bottom wall (78A) provided with a plurality of gas injection holes (30A, 30B) formed therein and a side wall (78B) rising from a peripheral portion of the bottom wall. A plurality of gas diffusion chamber forming plates (82A-82C) are housed in the shower head main body (78). A through-hole is formed in a head mounting frame (76) disposed on a ceiling of a processing vessel (24). An upper portion of the side wall (78B) of the shower head main body (78) is inserted into the through-hole, so that a part of the side wall (78B) is exposed to the exterior of the processing vessel. A cooling mechanism (84) is disposed at the upper end portion of the side wall (78B).

Abstract: A method of etching a wafer using resonant infrared energy and a filter to control non-uniformities during plasma etch processing. The filter includes a predetermined array or stacked arrangement of variable transmission regions that mirror the spatial etch distortions caused by the plasma etching process. By spatially attenuating the levels of IR energy that reach the wafer, the filter improves uniformity in the etching process. Filters may be designed to compensate for edge fast etching due to macro-loading, asymmetric pumping in a plasma chamber, and magnetic field cusping.

Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.

Abstract: A plasma CVD apparatus includes a showerhead comprised of a body having a hollow structure. The shower plate is detachably integrated with the body at a peripheral surface of the body and a peripheral surface of the shower plate, and at least one of the peripheral surface of the body or the peripheral surface of the shower plate is surface-treated.

Abstract: Stress within a suspension wall for suspending a showerhead in a process chamber is ameliorated by one or more of: (1) A gas sealing skirt that helps protect the suspension wall from direct contact with process gas. The gas sealing skirt is connected to either the chamber wall or the showerhead but is not connected to both. (2) Openings in the suspension wall that reduce exposure of the suspension wall to process gas or ambient atmosphere when the chamber lid is opened. (3) A substantially vertical arrangement of one or more rifts in the suspension wall which facilitate horizontal buckling or flexing of the suspension wall. (4) A plurality of suspension walls whose respective central portions are coplanar.

Abstract: A processing system is disclosed for conducting various processes on substrates, such as semiconductor wafers by varying the exposure to a chemical ambient. The processing system includes a processing region having an inlet and an outlet for flowing fluids through the chamber. The outlet is in communication with a conductance valve that is positioned in between the processing region outlet and a vacuum exhaust channel. The conductance valve rapidly oscillates or rotates between open and closed positions for controlling conductance through the processing region. This feature is coupled with the ability to rapidly pulse chemical species through the processing region while simultaneously controlling the pressure in the processing region. Of particular advantage, the conductance valve is capable of transitioning the processing region through pressure transitions of as great as 100:1 while chemical species are flowed through the processing region using equally fast control valves in a synchronous pulsed fashion.

Abstract: Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate 106 is disposed in a processing chamber 102 of a plasma processing apparatus and is provided with a plurality of gas discharge holes 113a for discharging a plasma excitation gas to generate plasma in the processing chamber 102, wherein an aspect ratio of a length of the gas discharge hole to a hole diameter thereof (length/hole diameter) is equal to or greater than about 20. The gas discharge holes 113a are made of ceramics members 113 which are separated from the shower plate 106, and the ceramics members 113 are installed in vertical holes 105 opened in the shower plate 106.

Abstract: A gas providing member includes a body portion which forms a gas providing passage between the body portion and a processing member which holds the processing target, and the gas providing passage provides gas onto a processing target. In the body portion, a gas reservoir portion located in the gas providing passage is formed.

Abstract: A thermal processing system with improved gas flow and method for injecting a process gas into a thermal processing system. The thermal processing system has an injection section with injection outlets that inject process gas into a processing space and a delivery section that delivers process gas to the injection section. The delivery section may be coupled with the injection section at an inlet disposed between opposite ends of the injection section. A fluid lumen of the injection section may have a larger cross-sectional area than a fluid lumen of the delivery section. The thermal processing system may include an inner tube, which surrounds the processing space, having a slit through which the processing space communicates with an annular pumping space defined between the inner tube and an outer tube of the thermal processing system.

Abstract: Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

Abstract: Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate with sufficient pressure drop to more evenly distribute the gases prior to passing through the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.

Abstract: A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.

Abstract: Provided is a shower plate in which there's no need for a cover plate. The shower plate 105 is disposed in a processing chamber 102 of a plasma processing apparatus, for discharging a plasma excitation gas to generate plasma in the processing chamber 102, and the shower plate 105 includes a horizontal hole 111 for introducing the plasma excitation gas into the shower plate 105 from a gas inlet port 110 of the plasma processing apparatus; and a vertical hole 112 communicating with the horizontal hole 111, wherein the shower plate 105 is formed as a single body.

Abstract: Substrate processing systems are described that may include a processing chamber having an interior capable of holding an internal chamber pressure different from an external chamber pressure. The systems may also include a remote plasma system operable to generate a plasma outside the interior of the processing chamber. In addition, the systems may include a first process gas channel operable to transport a first process gas from the remote plasma system to the interior of the processing chamber, and a second process gas channel operable to transport a second process gas that is not treated by the remote plasma system. The second process gas channel has a distal end that opens into the interior of the processing chamber, and that is at least partially surrounded by the first process gas channel.

Abstract: A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract: A shower head is provided in a processing chamber for processing a substrate therein to face a mounting table for mounting thereon the substrate and formed of a laminated body in which a plurality of plate-shaped members are laminated. The shower head serves to supply one or more gases in a shower shape toward the substrate. The shower head includes a first gas supply unit for supplying a first gas toward the substrate through first gas injection openings provided in the laminated body, a second gas supply unit for supplying a second gas through second gas injection openings provided in the laminated body and a plurality of gas exhaust holes, formed through the laminated body, for exhausting a gas through a portion of the laminated body, the portion facing the mounting table.

Abstract: The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and a thermally conductive gasket, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a disjointed thermal interface comprising portions proximal to showerhead passages of the showerhead electrode and portions displaced from the showerhead passages. The displaced portions are recessed relative to the proximal portions and are separated from the showerhead passages by the proximal portions of the thermal interface.

Abstract: A gas-communicating body 11 having a pillar shape and pores communicated with each other in a gas-communicating direction is formed. A dense member 12 is formed of a material that is not gas-permeable, has a tube shape, and covers a lateral side of the gas-communicating body 11 so that the dense member and the lateral side of the gas-communicating body contact each other. A porous piece body 13 is formed by inserting the gas-communicating body into a hollow portion of the dense member, and then the porous piece body is sintered at a first temperature. A concave portion is formed on a top plate, and a gas flow path penetrating the top plate of which one end is connected to the concave portion is formed. The porous piece body is inserted into the concave portion, and then is entirely sintered at a temperature equal to or lower than the first temperature. Accordingly, the shower plate is formed.

Abstract: A shower head is provided in a processing chamber for processing a substrate therein. Further, the shower head has a facing surface facing a mounting table for mounting thereon the substrate and serves to supply one or more gases through the facing surface toward the substrate. The shower head includes a central gas supply unit for supplying a first gas through a central portion of the facing surface toward the substrate, a peripheral gas supply unit for supplying a second gas through a peripheral portion of the facing surface toward the substrate and a gas exhaust unit, provided with a plurality of gas exhaust holes formed between the central gas supply unit and the peripheral gas supply unit, for exhausting the first and the second gas from the facing surface.

Abstract: An electrode assembly for a plasma reactor, such as a plasma etch or plasma-enhanced chemical vapor deposition reactor, comprises an electrode plate having a support frame attached to one surface thereof. The electrode plate is composed of a substantially pure material which is compatible with a particular reaction being performed in the reactor, while the support frame is composed of a material having desirable thermal, electrical, and structural characteristics. The support frame is bonded to the electrode plate using a bonding layer, usually a ductile metallic bonding layer, which provides effective thermal and electrical coupling while permitting a degree of thermal expansion mismatch between the support frame and the electrode plate.