Abstract: In order to prevent occurrence of a residual film distribution dependent upon a pattern density of a mold, in producing the mold to be used for imprint lithography, by etching using a mask, use is made of a first mask M1 for forming a desired pattern to be formed on a surface of the mold, and a second mask M2 for partially covering the first mask such that the area covering openings of the first mask is made larger as an opening ratio of the pattern formed on the first mold surface is higher, thereby to make a volume of a recess of the mold in a given area; in which, after the mold is etched by the first mask, etching is further conducted by covering partially the first mask with the second mask without removing the first mask; or alternatively, the etching is conducted with the first mask and the second mask overlapped from the beginning, thereby to use the second mask as a mask for delaying the etching, for conduct the etching.

Abstract: A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.

Abstract: Multi-layer ground plane structures and methods of manufacture for integrated lead suspension flexures. A flexure in accordance with one embodiment of the invention includes an insulating layer, a plurality of traces on the insulating layer and a stainless steel base layer on the side of the insulating layer opposite the traces. The stainless steel base layer includes one or more void portions with voids in the base layer opposite the insulating layer from the traces and one or more backed portions with the base layer backing the traces. A plurality of patterned and transversely-spaced first conductive ground planes are located opposite the insulating layer from the traces at the void portions and backed portions of the stainless steel base layer. A continuous gold second conductive ground plane is located opposite the insulating layer and the first ground planes from the side of the insulating layer adjacent to the traces at the void portions and backed portions of the stainless steel base layer.

Abstract: A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere to said substrate, wherein the method includes processing an organic film pattern formed on a substrate, by, in sequence, removing one of an altered layer and a deposited layer formed on the organic film pattern, and fusing said organic film pattern for deformation by applying gas atmosphere to the organic film pattern in the gas-applying unit, wherein at least a part of the removal step is carried out by applying a liquid to the organic film pattern in the liquid-applying unit. The process may include an ashing unit for ashing the substrate and/or a development unit for developing the organic film pattern.

Abstract: A method and apparatus for providing a write head having well-defined, precise write head pole tips. A coplanar write head pole tip processing method provides a thin-film magnetic write head pole tip layer and defines first and second pole tips from the pole tip layer. When the pole tips are provided on a write head, a write gap can be defined using ion milling, E-beam lithography, FAB or can be deposited. The write head pole tips can be used in conjunction with read heads by merging a read head with a write head or a read head can be bonded to a write head in a piggybacked fashion.

Abstract: Methods are provided for laser patterning a partial depth surface portion of a glass body by controlling the amount of stress induced in the glass body. A laser beam is directed along an impinged path on the surface portion of the glass body to heat the glass body to form a swell. The glass body is then cooled and etched. The surface portion of the glass body is heated above the strain point at a heating rate HR to form a swell. The heating rate HR is a function of a target temperature T and an exposure time of the output laser beam. The exposure time is controlled to reach a target temperature above the softening point of the glass body and does not require a power density that would lead to laser ablation of the surface portion. The surface portion is cooled below the strain point to induce regions of localized stress. The unablated surface portion is etched while in a state of laser-induced localized stress to form a patterned glass body.

Abstract: In the disassembling method of a display device of the present invention, the display device has a display panel, and metal plate unit having a panel member formed of a chassis member disposed on the back surface of the display panel and a circuit board as an electric circuit member attached to the chassis member through an attaching member. The disassembling method has a mounting step of mounting metal plate unit on stage whose tilt angle can be adjusted by mechanism section and a cutting step of cutting the attaching member in parallel with the surface of stage with saw blade that abuts on the attaching member by the own weight of metal plate unit based on the tilt angle of stage.

Abstract: A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.

Abstract: A pit is formed from a stack comprising at least one first layer formed by a material able to change physical state and a second layer made of the same material as that forming the first layer, but in a different physical state. An area of the first layer is treated to make said area go from its initial physical state to the physical state corresponding to that of the second layer. A selective etching step is then performed to eliminate said area of the first layer and the area of the second layer initially covered by the treated area of the first layer. Advantageously, said material is a phase transition material.

Abstract: An acoustic device includes a transducer formed on a first surface of a substrate and an acoustic horn formed in the substrate by a dry-etching process through an opposing second surface of the substrate. The acoustic horn is positioned to amplify sound waves from the transducer and defines a non-linear cross-sectional profile.

Abstract: An MR element includes a first exchange coupling shield layer, an MR stack, and a second exchange coupling shield layer that are arranged in this order from the bottom, and a nonmagnetic layer surrounding the MR stack. The MR stack includes a first free layer, a spacer layer, a second free layer, and a magnetic cap layer that are arranged in this order from the bottom. In the step of forming the MR stack and the nonmagnetic layer, a protection layer is formed on a layered film that will be the MR stack later, and a mask is then formed on the protection layer. Next, the layered film and the protection layer are etched using the mask and then the nonmagnetic layer is formed. After removal of the mask, the protection layer is removed by wet etching.

Abstract: A method according to one embodiment includes forming a mask above a thin film sensor stack; forming an electrically insulating layer above the mask and sensor stack, the insulating layer having a portion extending along a nonhorizontal end of the mask; selectively removing the insulating layer except for the portion thereof extending along the nonhorizontal end of the mask; removing portions of the sensor stack that are not covered by the mask and the portion of the insulating layer, wherein an end of the portion of the insulating layer positioned away from the mask is about aligned with a back end of the sensor stack after removing the portions thereof; and removing the mask.

Abstract: A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.

Abstract: A method for providing a PMR pole in a magnetic recording transducer comprises providing a mask on an intermediate layer, the mask including a line having at least one side, providing a hard mask on the mask, a first portion of the hard mask residing on the at least one side and a second portion residing on a surface of the intermediate layer, the hard mask including a dry-etchable layer and a high removal ratio layer on the dry-etchable layer, removing at least part of the first portion of the hard mask, at least a portion of the line being exposed, removing the line, thereby providing an aperture in the hard mask corresponding to the line, forming a trench in the intermediate layer under the aperture using a removal process, and providing the PMR pole, at least a portion of the PMR pole residing in the trench.

Abstract: A semiconductor device is formed by providing a substrate and forming a semiconductor-containing layer atop the substrate. A mask having a plurality of openings is then formed atop the semiconductor-containing layer, wherein adjacent openings of the plurality of openings of the mask are separated by a minimum feature dimension. Thereafter, an angled ion implantation is performed to introduce dopants to a first portion of the semiconductor-containing layer, wherein a remaining portion that is substantially free of dopants is present beneath the mask. The first portion of the semiconductor-containing layer containing the dopants is removed selective to the remaining portion of semiconductor-containing layer that is substantially free of the dopants to provide a pattern of sublithographic dimension, and the pattern is transferred into the substrate to provide a fin structure of sublithographic dimension.

Abstract: A differential microphone having a perimeter slit formed around the microphone diaphragm that replaces the backside hole previously required in conventional silicon, micromachined microphones. The differential microphone is formed using silicon fabrication techniques applied only to a single, front face of a silicon wafer. The backside holes of prior art microphones typically require that a secondary machining operation be performed on the rear surface of the silicon wafer during fabrication. This secondary operation adds complexity and cost to the micromachined microphones so fabricated. Comb fingers forming a portion of a capacitive arrangement may be fabricated as part of the differential microphone diaphragm.

Abstract: A method of fabricating a magnetic head is provided. The method of fabricating the magnetic head includes forming a writing head on a writing head area, forming an insulating layer having an inclined surface, forming a reading head on the inclined surface of the insulating layer, and forming an air bearing surface by polishing the surfaces of the writing head. Forming the reading head includes forming a first shield layer, a reading sensor, and a second shield layer.

Abstract: Provided is a method of manufacturing a perpendicular magnetic recording head which can enhance accuracy and simplify the manufacturing process. The method includes: forming a photoresist pattern having an opening part; forming a non-magnetic layer so as to narrow the opening part by a dry film forming method such as ALD method; stacking a seed layer and a plating layer so as to bury the opening part provided with the non-magnetic layer; and forming a main magnetic pole layer by polishing the non-magnetic layer, the seed layer, and the plating layer by CMP method until the photoresist pattern is exposed. The final opening width is unsusceptible to variations, thus reducing the number of the steps of forming the main magnetic layer.

Abstract: The present invention is to provide a method by which the waviness generated in a glass substrate surface during pre-polishing are removed and the glass substrate is finished so as to have a highly flat surface. The present invention relates a method of finishing a pre-polished glass substrate surface, the glass substrate being made of quartz glass containing a dopant and comprising SiO2 as a main component, the finishing method comprising: measuring a concentration distribution of the dopant contained in the glass substrate; and measuring a surface shape of the glass substrate in the pre-polished state, wherein conditions for processing the glass substrate surface are set for each part of the glass substrate based on the measurement results of the concentration distribution of the dopant and the surface shape of the glass substrate.

Abstract: A method of forming a write pole for a magnetic recording device is provided. The method comprises providing a layer of magnetic material covered with a secondary hard mask layer and a patterned primary hard mask, milling at a first milling angle to transfer a pattern from the patterned primary hard mask to the secondary hard mask, and milling at a second milling angle to transfer the pattern from the secondary hard mask to the layer of magnetic material to form the write pole. The second milling angle is greater than the first milling angle. The method further comprises milling at a third milling angle to adjust a side wall angle of the write pole to about a desired side wall angle, and milling at a fourth milling angle to reduce a track width of the write pole to a desired track width.

Abstract: A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

Abstract: A method and system for providing a PMR transducer including an intermediate layer. The method and system include providing a hard mask layer on the intermediate layer. The hard mask layer is for a reactive ion etch of the intermediate layer. The method and system also include providing a bottom antireflective coating (BARC) layer on the hard mask layer. The BARC layer is also a masking layer for the hard mask layer. The method and system also include forming a trench in the intermediate layer using at least one reactive ion etch (RIE). The trench has a bottom and a top wider than the bottom. The method and system also include providing a PMR pole. At least a portion of the PMR pole resides in the trench.

Abstract: Magnetoresistive (MR) elements having flux guides defined by the free layer. The MR element includes a free layer, a spacer/barrier layer, a pinned layer, and a pinning layer. A back edge of the free layer (opposite the sensing surface of the MR element) extends past a back edge of the spacer/barrier layer. The portion of the free layer extending past the back edge of the spacer/barrier layer defines a continuous flux guide. The flux guide is processed to reduce the conductive characteristics of the flux guide, thereby reducing current shunt loss in the flux guide.

Abstract: A method of semiconductor fabrication including an etching process is provided. The method includes providing a substrate and forming a target layer on the substrate. An etchant layer is formed on the target layer. The etchant layer reacts with the target layer and etches a portion of the target layer. In an embodiment, an atomic layer of the target layer is etched. The etchant layer is then removed from the substrate. The process may be iterated any number of times to remove a desired amount of the target layer. In an embodiment, the method provides for decreased lateral etching. The etchant layer may provide for improved control in forming patterns in thin target layers such as, capping layers or high-k dielectric layers of a gate structure.

Abstract: A method for manufacturing a magnetic write head that avoids the challenges associated with the formation of fence structures during write pole definition. A magnetic write pole material is deposited. A mask structure is deposited over the magnetic write pole material. The mask structure includes a first hard mask, a marker layer, a physically robust, inorganic RIEable image transfer layer, a second hard mask structure over the image transfer layer and a photoresist layer over the second hard mask. A reactive ion etching process can be used to transfer the image of the photoresist mask and second hard mask layer onto the image transfer layer. An ion milling is performed to define the write pole. A layer of non-magnetic material such as alumina is deposited. An ion milling is performed until the marker layer has been reached, and another reactive ion etching is performed to remove the remaining hard mask.

Abstract: A process for the manufacture of small sensors with reproducible surfaces, including electrochemical sensors. One process includes forming channels in the surface of a substrate and disposing a conductive material in the channels to form an electrode. The conductive material can also be formed on the substrate by other impact and non-impact methods. In a preferred embodiment, the method includes cutting the substrate to form a sensor having a connector portion and a transcutaneous portion, the two portions having edges that define one continuous straight line.

Abstract: Embodiments of the present invention help to provide a method for manufacturing a perpendicular magnetic recording head including a main magnetic pole having a width that does not generally vary. According to one embodiment, a magnetic film, a first inorganic mask film, an organic film, a second inorganic mask film, and a resist pattern are formed in this order. Reactive ion etching (RIE) is performed using the resist pattern as a mask to etch the second inorganic mask film and the organic film and form a mask for the subsequent step. A flow rate of an Ar gas is then controlled, and ion milling is performed, to correct a difference between the width of the mask located at the central portion of the wafer and the width of the mask located at the outer peripheral portion of the wafer. The magnetic film is processed to have a uniform track width. Ion milling is then performed to form the main magnetic pole having an inverted trapezoidal shape.

Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic recording, the write head having a write pole with an increased bevel (taper) angle. The write pole is constructed by forming a mask structure over a magnetic write pole material, and then performing a combination of sweeping or rotation with static (non-rotating, non-sweeping) ion milling at an angle relative to normal. The ion milling is performed while moving the wafer laterally within the ion milling tool to ensure that the ion milling is performed uniformly across the wafer during static milling.

Abstract: Methods of manufacture of integrated circuit inductors having slotted magnetic material will be described. The methods may employ electro- or electroless plating techniques to form a layer or layers of magnetic material within the slotted magnetic material structure, and in particular those magnetic material layers adjacent to insulator layers.

Abstract: A method is provided for fabricating a read element with leads that overlay a top surface of a sensor of the read element. The method includes forming a mask over a sensor layer, then using the mask to define the sensor from the sensor layer. The mask is then narrowed and a lead layer is formed that overlays both ends of the top surface of the sensor without covering a center portion of the top surface.

Abstract: A method provides a structure in a magnetic recording transducer. The structure resides on an underlayer. The method includes providing a protective layer and providing layer(s) for the structure. The protective layer covers a field region but exposes a device region in which the structure is to reside. A first portion of the layer(s) reside in the device region, while a second portion of the layer(s) reside in the field region. The method also includes removing the second portion of the layer(s) using an over-removal condition. The underlayer is covered by a remaining portion of the protective layer after the removing step is completed. The method also includes removing the remaining portion of the protective layer. An underlayer removal rate is substantially less than a protective layer during the step of removing of the protective layer.

Abstract: A method for providing a perpendicular magnetic recording (PMR) transducer is described. The PMR transducer provided includes a PMR pole and yoke structure coupled with the PMR pole. The method includes providing a hard mask and an intermediate layer. A first portion of the hard mask resides on the PMR pole. A second portion of the hard mask resides on another structure. The intermediate layer surrounds at least the PMR pole. The method also includes performing a planarization on at least the intermediate layer, removing the first portion of the hard mask on the PMR pole without completely removing the second portion of the hard mask on the other structure. The method further includes removing a remaining portion of the hard mask on the other structure, providing a write gap on the PMR pole, and providing a shield on the write gap.

Abstract: A semiconductor device and related method for fabricating the same include providing a stacked structure including an insulating base layer and lower and upper barrier layers with a conductive layer in between, etching the stacked structure to provide a plurality of conductive columns that each extend from the lower barrier layer, each of the conductive columns having an overlying upper barrier layer cap formed from the etched upper barrier layer, wherein the lower barrier layer is partially etched to provide a land region between each of the conductive lines, forming a liner layer over the etched stacked structure exposing the land region, and etching the liner layer and removing the exposed land region to form a plurality of conductive lines.

Abstract: A method of measuring a bevel angle in a write pole comprises the step of providing a mask over a wafer containing the write pole. The mask has a first opening over the write pole and a second opening over a sacrificial region of the wafer. The sacrificial region comprises a same material as the write pole. The method further comprises the steps of performing a beveling operation on the write pole and the sacrificial region to form a first bevel in the write pole and a second bevel in the sacrificial region, and measuring an angle of the second bevel in the sacrificial region to determine the bevel angle of the write pole.

Abstract: A magnetic head includes a pole layer, first and second side shields, and an encasing layer having a pole groove that accommodates the pole layer and first and second side shield grooves that accommodate the first and second side shields. In a manufacturing method for the magnetic head, the pole groove and first and second initial side shield grooves are formed in a nonmagnetic layer using an etching mask layer having first to third openings. In the manufacturing method, a wall face of the first initial side shield groove that is closer to the pole groove and a wall face of the second initial side shield groove that is closer to the pole groove are etched by dry etching to thereby complete the first and second side shield grooves.

Abstract: A PMR head comprises a substrate, a magnetic pole formed over the substrate, the pole having a pole tip having a cross-sectional tapered shape wherein the pole tip is surrounded by a write gap layer, an integrated shield comprising side shields on the substrate laterally surrounding the pole tip and a trailing shield overlying the pole tip and integral with the side shields.

Abstract: A method for fabricating a magnetic head having multiple readers includes forming a plurality of generally laterally positioned lower shields; forming a lower gap layer above each lower shield; forming a sensor above each lower gap layer; forming an upper gap layer above each sensor; and forming an upper shield above each upper gap layer; wherein an overall gap thickness is defined between vertically aligned pairs of the upper and lower shields, wherein the overall gap thickness between one of the pairs of upper and lower shields is thicker than the overall gap thickness between another of the pairs of upper and lower shields.

Abstract: The claimed invention pertains to methods of forming one or more inductors on a semiconductor substrate. In one embodiment, a method of forming an array of inductor core elements on a semiconductor substrate that includes integrated circuits is disclosed. A first set of spaced apart metallic core elements are formed over the substrate. Isolation sidewalls are then formed on side surfaces of the core elements. Afterward, a second set of metallic core elements are formed over the substrate. The first and second sets of core elements are substantially co-planar and interleaved such that only the isolation sidewalls separate adjacent core elements. Particular embodiments involve other processing operations, such as the selective electroplating of different types of metal to form core elements and/or the deposition and etching away of an isolation layer to form isolation sidewalls on the core elements.

Abstract: A magnetic recording head and a method of manufacturing the same. The magnetic recording head includes a stack containing a main pole and a return pole. The stack includes a first magnetic layer having a groove formed therein; an insulating layer covering a surface of the groove; and a second magnetic layer pattern filling the groove covered with the insulating layer.

Abstract: Techniques for making nanowires with a desired diameter are provided. The nanowires can be grown from catalytic nanoparticles, wherein the nanowires can have substantially same diameter as the catalytic nanoparticles. Since the size or the diameter of the catalytic nanoparticles can be controlled in production of the nanoparticles, the diameter of the nanowires can be subsequently controlled as well. The catalytic nanoparticles are melted and provided with a gaseous precursor of the nanowires. When supersaturation of the catalytic nanoparticles with the gaseous precursor is reached, the gaseous precursor starts to solidify and form nanowires. The nanowires are separate from each other and not bind with each other to form a plurality of nanowires having the substantially uniform diameter.

Abstract: A method for forming a tapered, electroplated structure. The method involves forming a first mask structure having an opening. A shrink material is deposited into the opening, such that the thickness of the shrink material is less than the thickness of the first mask structure. The first mask structure and the shrink material are then heated causing the sides of the opening in the mask structure to bulge inward. The shrink material is then removed, and a first electrically conductive material can then be electroplated into the opening to a thickness that is much less than the thickness of the mask. The bulbous shaped of the deformed photoresist mask forms a taper on the first electrically conductive material. The first mask can then be removed and a second electrically conductive material can be electroplated over the first electrically conductive material.

Abstract: Write elements and methods of fabricating magnetic write poles are described. For one method, a vertical mask structure is formed on a magnetic layer in locations of a pole tip and a yoke of a write pole. The vertical mask structure may be formed by coating vertical surfaces of resists with an atomic layer deposition (ALD) process or a similar process. A removal process is then performed around the vertical mask structure to define the pole tip and part of the yoke of the write pole, and the vertical mask structure is removed. A lower portion of the pole tip is them masked while the upper portion of the pole tip and the part of the yoke is exposed. The upper portion of the pole tip and the part of the yoke are then expanded with magnetic material, such as with a plating process.

Abstract: A multichamber-type processing apparatus and processing method using same, in which a substrate is reliably neutralized without being damaged, thereby ensuring excellent accuracy and throughput. The processing apparatus includes a transfer chamber, etching chambers selectively communicating with the transfer chamber and providing a space to etch a first substrate therein, and ashing chambers selectively communicating with the transfer chamber and providing a space to ash a second substrate therein. A transfer mechanism is installed in the transfer chamber to sequentially transfer the substrate from the transfer chamber into the etching and ashing chambers. The substrate is electrostatically adsorbed to electrostatic chucks in the etching and ashing chambers. An monatomic nitrogen atom supply unit supplies dissociated monatomic nitrogen atoms into the etching and ashing chambers.

Abstract: A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state.

Abstract: A method for providing a perpendicular magnetic recording head includes providing a metal underlayer and forming a trench in the metal underlayer. The trench has a bottom and a top wider than the bottom. The method also includes providing a PMR pole. At least a portion of the PMR pole resides in the trench. The method also includes providing a write gap on the PMR pole and providing a top shield on at least the write gap.

Abstract: A method for manufacturing a manufacturing a magnetoresistive sensor that allows the sensor to be constructed with a very narrow and well controlled track width. The method includes depositing a layer of diamond like carbon over a series of sensor layers. A first mask is then formed to define a sensor, and an ion milling is performed to remove sensor material not protected by the first mask. Then, a second mask is formed, and a hard bias layer is deposited to the thickness of the sensor layers. The second mask is then lifted off and a CMP is performed to remove the first mask structure. Because all areas other than the area directly over the sensor are substantially planar a quick, gentle CMP can be used to remove the first mask layer even if the first mask is small, such as for definition of a very narrow track-width sensor.

Abstract: A system and method is disclosed that terminates an etch process of a semiconductor crystal material at a precisely located depth. The semiconductor crystal is made of a first material and has a buried layer of a second material that is stoichiometrically different than the first material. The buried layer is located at a depth in the first material at which it is desired to terminate the etch process. During the etch process an optical emission spectrum of the first material is monitored. The intensity of the spectrum decreases when the etch process reaches the second material of the buried layer. The etch process is terminated when the decrease in spectrum intensity is detected.

Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch.

Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic data recording. The method allows an upper write coil to be formed directly on a conformally deposited layer of non-magnetic material such as alumina which has been deposited over a magnetic shaping layer and write pole. The method allows the write coil to be constructed without the need for the deposition of a thick alumina fill layer and subsequent chemical mechanical polishing. This, therefore, avoids the necessity of such a chemical mechanical polishing step.

Abstract: According to one embodiment, an imprint blank includes a substrate layer and a plurality of diamond-like carbon layers. The plurality of diamond-like carbon layers are stacked on the substrate layer, and have a mixture ratio of carbon atoms forming sp2 hybrid orbitals to carbon atoms forming sp3 hybrid orbitals differing between adjacent layers in a stacking direction.