Abstract: A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.

Abstract: A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

Abstract: A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.

Abstract: The invention is directed to improvement of a write element of a thin film magnetic head. The first pole portion projects from a flat surface of a first yoke portion at a medium-facing surface side and having a reduced width at its upper end. The second pole portion faces the upper end of the first pole portion, having the same width as the upper end of the first pole portion, with the gap film interposed between the second pole portion and the upper end of the first pole portion. The first pole portion includes a magnetic film adjacent to the gap film, the magnetic film etched at both sides in width direction to have a narrowed portion having substantially the same width as the second pole portion, and a base portion connected to the narrowed portion, increasing in thickness toward the narrowed portion.

Abstract: A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.

Abstract: A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least intermittently exposed to the ion beam during implantation, as a result of the relative scanning of the ion beam and the wafer holder. An arm shield mechanism has a plurality of shielding surfaces which can be selectively disposed to receive the ion beam to protect the exposed portion of the support arm. The shielding surfaces may form a sleeve arranged over the arm which may be rotatable above the arm to present selected surfaces to the ion beam. Cross contamination when successively implanting different species can be reduced by presenting different shield surfaces to the beam.

Abstract: A manufacturing method of a thin film magnetic head is provided. In the manufacturing method of a thin film magnetic head, an inorganic insulating layer is formed along at least a sidewall surface of each conductor part. A gap of each conductor part is filled by an organic insulating layer. An upper surface of the conductor part, a magnetic pole portion, and a connecting layer are grinded to be planar with an organic insulating layer and an inorganic insulating layer. During an upper surface of each conductor part is grinded, the inorganic insulating layer, which is hard, suppresses a shear drop of each conductor part by grinding.

Abstract: A side-by-side read/write head includes a self-aligned trailing shield, where a rear edge of the trailing shield is defined by the same lithography/etching process used to define a rear edge of a read sensor. A plurality of read sensor layers and a pole tip structure adjacent the read sensor layers are formed over a wafer. A non-magnetic layer is deposited over the pole tip structure. A patterned resist is then formed over both the read sensor layers and the non-magnetic layer. With the patterned resist in place, read sensor materials of the read sensor layers are etched away so as to define the rear edge of the read sensor. Non-magnetic materials of the non-magnetic layer are simultaneously etched away so as to form an etched region which defines the rear edge for the trailing shield.

Abstract: In one illustrative example, a method for use in making a magnetic write head includes the steps of forming a first pole piece layer of a first pole piece; forming a patterned resist over the first pole piece layer; electroplating a pedestal over the first pole piece layer within a channel of the patterned resist; electroplating a metal gap layer over the pedestal within the channel of the patterned resist; forming a resist channel shrinking film over the patterned resist; baking the resist channel shrinking film over the patterned to thereby reduce a width of the channel; removing the resist channel shrinking film; electroplating a second pole piece within the reduced-width channel of the patterned resist; removing the patterned resist; and milling the pedestal, using the second pole piece as a mask, to form a central notched pedestal having side walls with angled slopes.

Abstract: A method of manufacturing a perpendicular magnetic recording head is provided. The method accurately defines a gap layer. The method includes forming a lower gap layer made of a non-magnetic material on a main magnetic pole layer. An upper gap layer is formed on the lower gap layer, the upper gap layer being made of the non-magnetic material. A resist layer is formed on the upper gap layer, and the resist layer is removed from an end surface. The upper gap layer not covered with the resist layer is removed, while exposing a new film surface by removing a surface oxidation layer of the resist layer. A return path layer is formed by plating on the exposed lower gap layer, the upper gap layer, and the resist layer through the plating underlayer.

Abstract: A processing method of a polymer product is provided. This method first supplies a gas to an atmospheric pressure plasma machine to generate an ionized gas. Then, bombard the ionized gas to the surface of the polymer product to create a surface reaction. Afterwards, a dying treatment or an electroplating treatment is performed on the polymer product.

Abstract: An improved mold, for use in the formation of a perpendicular magnetic write head, is described, together with a process for its manufacture. Conventional alumina is replaced by tantalum in the yoke portion of the mold. When both the tantalum and the alumina areas are simultaneously subjected to reactive ion etching, sloping sidewalls are obtained in the alumina area (write pole tip portion) whereas the sidewalls are almost vertical in the tantalum (yoke) area, resulting in a uniform neck height.

Abstract: A method of manufacturing a tactile sensor, which is capable of implementing a wide range of senses, including sensing contact pressure (vertical force and horizontal force) with an external object and heat caused by the contact pressure, comprises forming a side block formation pattern of a force sensor and forming a piezo-resistor formation pattern of a heat sensor; forming a piezo-resistor and depositing an oxide film on the piezo-resistor; forming contact holes and forming a line hole formation pattern; forming a metal line, a temperature measurement metal line, and a heater; depositing an oxide film on the metal line, the temperature measurement metal line, and the heater, and forming a load block on the oxide film; and forming a side block by etching a bottom surface of the wafer on which the load block is formed.

Abstract: A method of manufacturing a nozzle plate 2 is disclosed. The nozzle plate 2 has a plurality of nozzle openings 22 through each of which a droplet is adapted to be ejected. The method includes the steps of: preparing a processing substrate (silicon substrate 10) constituted from silicon as a main material, the processing substrate having two major surfaces; providing a supporting substrate 50 for supporting the processing substrate onto one major surface of the processing substrate 50; and forming the plurality of nozzle openings 22 on the other major surface of the processing substrate by subjecting the other major surface of the processing substrate to an etching process while the processing substrate is supported by the supporting substrate 50.

Abstract: A method of forming a relatively fine contact hole using two masks. The two masks may have only their edge portions open, which may overlap each other.

Abstract: A method and apparatus for providing a reverse air bearing surface head with trailing shield design for perpendicular recording. A reverse air bearing surface head for perpendicular recording is provided with an inversed bevel shape to handle skew when recording data on a magnetic recording medium.

Abstract: A method for forming a hard bias structure in a magnetoresistive sensor is disclosed. A magnetoresistive sensor having a soft magnetic bias layer, spacer layer, and a magnetoresistive layer, is formed over a substrate having a gap layer. A mask is formed over a portion of the magnetoresistive sensor structure to define a central region. The masked structure is ion milled to remove portions not shielded by the mask, to form the central region with sloped sides, and to expose a region of the gap layer laterally adjacent the sloped sides. A first underlayer is deposited onto at least the sloped sides at a high deposition angle. A second underlayer is deposited to at least partially overlap the first underlayer, and at a first lower deposition angle. A hard bias layer is deposited over at least a portion of the second underlayer, and at a second lower deposition angle.

Abstract: A device and a method is provided for irradiating wafers with low-intensity UV light to prevent blistering during the subsequent photostabilization of the photoresist.

Abstract: An improved damascene method of forming a write coil of a magnetic head. The method includes the steps of forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; after removing the etched hard mask layer, electroplating a material within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the electroplated material. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.

Abstract: There is provided methods for producing an ultrasonic transducer assembly. The methods generally comprise the steps of creating a multi-layered rigid or flexible printed circuit board, having a top surface and bottom surface; creating a patterned conducting layer upon each of the top and bottom surface; creating at least one patterned backplate electrode on the board or as part of a discreet component which is then attached to the board; creating at least one conductive through-hole via integral with the board; roughening at least a portion of each of the at least one backplate to introduce gas pockets in that portion of a surface of the backplate; and attaching thin insulating or dielectric single or multi-layer film on a portion of the board in which the film has an integral conducting surface and in which the conducting surface is configured so as to form a capacitive structure with the at least one backplate.

Abstract: In one illustrative example disclosed, a method for use in making a magnetic head involves forming a thermal-assist heater for the magnetic head; forming a plurality of coil layers of a write coil using a damascene process; and simultaneously forming an electrical connection to the thermal-assist heater in the same damascene process used to form the write coil. Advantageously, fabrication steps are reduced using a parallel process that provides for relatively small dimensions and reduces the possibility of electrical shorting. The method may be alternatively used to form an electrical connection to any other suitable electrical device for the magnetic head, such as an electrical lapping guide (ELG) or other component.

Abstract: Methods for fabricating pole piece tips for a magnetic transducer are disclosed. The ion-milling operations for trimming P2 and notching P1 are controlled using feed-forward and feedback. The preferred method of the invention includes steps for setting four time values used in different phases of the ion-milling process based on feed-forward and feedback of measured values including the P2 width measured in the mask, multiple P2B measurements and measurement of the notch depth.

Abstract: A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations on the substrate to induce a reaction between the substrate and the reactant.

Abstract: A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.

Abstract: A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a deposition layer according to plasma assisted chemical vapor deposition (CVD) process; treating the deposition layer portion with a hydrogen plasma treatment to reduce an electrical charge nonuniformity of the deposition layer including applying a biasing power to the semiconductor wafer; and, carrying out a subsequent reactive ion etching process.

Abstract: The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not covered by the masking layer, etching pyramidal apertures in the first layer of doped silicon, removing the masking layer, depositing a second layer of doped silicon onto the first layer of doped silicon, the second layer of doped silicon being oppositely doped to the first layer of doped silicon and etching away the first layer of doped silicon. Further steps may be added to form the atomic force microscope tips at the end of cantilevers.

Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.

Abstract: A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

Abstract: A method and apparatus for controlling the removal of material from a semiconductor substrate in an integrated circuit fabrication process is disclosed. The method and apparatus utilize a light source or charged particle beam (electron or ion beam) to induce a current in at least one P-N junction formed in the semiconductor substrate. The induced current is monitored during the removal of material and the process is stopped or endpointed in response to the induced current making a predetermined transition.

Abstract: Method for fabricating a gyroscope including: fabricating a SMS wafer where a first wafer, a metal film, and a second wafer are sequentially stacked; forming a cantilever or a bridge shaped-structure on the relevant portion of the first wafer through the photolithography process; attaching to the surface of the first wafer, a first cap made of glass and having a predetermined space for sealing the movable structure in a vacuum state; separating and removing the metal film and the second wafer from the first wafer; and attaching to the backside of the first wafer, the second cap which is structurally and materially symmetric to the first cap. The SMS wafer is fabricated by depositing the metal film on the second wafer and bonding the first wafer on the metal film using metal paste or material of polymer series. With lower material costs, improvements in performance and characteristics can be achieved.

Abstract: A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).

Abstract: A piezoelectric substrate is provided with interdigital transducer electrodes including a first electrode layer, a second electrode layer, and a third electrode layer that is principally made of aluminum. The piezoelectric substrate has a stepped structure on the surface of the piezoelectric substrate, the stepped structure including terraces each having a width of about 50 nm or less and steps each having a width of a mono-molecular layer (e.g., about 14 ?).

Abstract: A pattern forming method includes: forming an etching-subject layer on a substrate; forming a Ti layer on the etching-subject layer; forming a TiOx layer by irradiating light on a portion of the Ti layer using a mask; etching the Ti layer to form a TiOx pattern; etching the etching-subject layer using the TiOx pattern as a mask; and removing the TiOx pattern.

Abstract: Multiple thin films of spin-valve GMR sensor are formed in a trapezoidal cross-sectional shape by laminating an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer and a nonmagnetic protective layer on a lower insulated gap layer. The amount of etching of the lower insulated gap layer produced in the process of patterning the spin-valve giant magnetoresistive layers into the multiple thin films of spin-valve GMR sensor is 10 nm or less. Further, the angle ? which the tangent line of each side face of the multiple thin films to the middle line of the free magnetic layer in its thickness direction forms with respect to the middle line of the free magnetic layer becomes 45 degrees or more. This structure makes it possible to provide such a spin-valve giant magnetoresistive head that it meets the requirements for securing constant breakdown voltage and preventing instability of MR output voltage waveform.

Abstract: A magnetoresistive (MR) read head is disclosed including a shield layer with a recessed portion and a protruding portion defined by the recessed portion. Also included is an MR sensor located in vertical alignment with the protruding portion of the shield layer. Further provided is at least one gap layer situated above and below the MR sensor. At least one of such gap layers is positioned in the recessed portion of the shield layer. By this design, a combined thickness of the gap layers is thinner adjacent to the MR sensor and the protruding portion of the shield layer, while being thicker adjacent to the recessed portion of the shield layer. As such, optimum insulation is provided while maintaining planar gap layer surfaces to avoid the detrimental ramifications of reflective notching and the swing curve effect.

Abstract: A method of manufacturing a layer sequence having a first and a second laterally confined structure comprises the steps of providing a first layer on a first surface portion of a substrate, which first layer is doped with dopant of a first type of conductivity, providing a second layer on a second surface portion of the substrate, which second layer is free of dopant of the first type of conductivity, forming a third layer on the first layer, which third layer is free of dopant of the first type of conductivity, and forming a fourth layer on the second layer, which forth layer is doped with dopant of the first type of conductivity. The first layer and the third layer are etched, thereby patterning the first and third layer to form the first laterally confined structure. The second layer and the forth layer are etched, thereby patterning the second and fourth layer to form the second laterally confined structure.

Abstract: A method of manufacturing a magnetoresistance effect device, including: forming a first ferromagnetic body, a nonmagnetic dielectric layer on the first ferromagnetic body, and a second ferromagnetic body on the nonmagnetic dielectric layer; etching part of an external region of a predetermined ferromagnetic tunnel junction region using a first linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region; and etching another part of the external region of the predetermined ferromagnetic tunnel junction region using a second linear mask pattern which is traversing the predetermined ferromagnetic tunnel junction region and intersecting with the first linear mask pattern.

Abstract: Magnetic heads capable of recording and reading with high sensitivity and resolution are provided by minimizing the outflow of magnetic fluxes from a flux guide to magnetic shields while using a flux guide structure for an MR element. In the magnetic head, magnetic shields exposed on a surface opposite a magnetic recording medium (air bearing surface) and a flux guide exposed between the magnetic heads via a non-magnetic layer are provided, and magnetic fluxes are guided by the flux guide to a magnetoresistive (MR) element formed in a position not exposed on the air bearing surface. The height of the magnetic shields in direction perpendicular to the air bearing surface is less than the distance from the air bearing surface to the MR element.

Abstract: The invention relates to a method for removing an area of a layer of a component consisting of metal or a metal compound. According to prior art, corrosion products of a component are removed in a first step by applying a molten mass or by heating in a voluminous powder bed. This requires high temperatures or a large amount of space. The inventive method for removing corrosion products of a component is characterized in that a cleaning agent is applied locally, which removes the corrosion products by means of a gaseous reaction product.

Abstract: A milling device is disclosed for the preparation of microscopy specimens or other surface science applications through the use of ion bombardment. The device provides the ability to utilize both gross and fine modification of the specimen surface through the use of high and low energy ion sources. Precise control of the location of the specimen within the impingement beams created by the ion sources provides the ability to tilt and rotate the specimen with respect thereto. Locational control also permits the translocation of the specimen between the various sources under programmatic control and under consistent vacuum conditions. A load lock mechanism is also provided to permit the introduction of specimens into the device without loss of vacuum and with the ability to return the specimen to ambient temperature during such load and unload operation. The specimen may be observed and imaged during all active phases of operation.

Abstract: On a surface of a bottom pole, a write gap film and first magnetic material film having a high saturation magnetic flux density are formed, and the first magnetic material film is etched to remain a portion extending from an air bearing surface to a throat height zero reference position and a first non-magnetic film is formed in a removed portion. The first non-magnetic material film is polished to obtain a flat surface which is coplanar with a surface of the first magnetic material film. A second magnetic material film having a high saturation magnetic flux density is formed on the flat surface. The second magnetic material film, first magnetic material film, write gap film and bottom pole are partially removed by RIE using a mask formed on the flat surface.

Abstract: A metal layer 12 of aluminum or an aluminum alloy is formed on at least one side of a ceramic substrate 10, and a resist 14 having a predetermined shape is formed on the metal layer 12. Then, an etchant of a mixed solution prepared by mixing ferric chloride with water without adding any acids is used for etching and removing an undesired portion of the metal layer 12 to form a metal circuit 12 on the at least one side of the ceramic substrate 10.

Abstract: A method of etching is disclosed using a photoresist etch barrier formed by an exposure with a light source of which wavelength is in the range of 157 nm to 193 nm, such as an argon fluoride(ArF) laser or fluorine laser(F2 laser), the method includes the steps of coating a photoresist layer on a etch target layer; forming photoresist pattern by developing the photoresist layer after exposing the photoresist layer with a light source of which wavelength is in the range of 157 nm to 193 nm; forming a polymer layer and etching a portion of the etch target layer simultaneously with a mixture of fluorine-based gas, an Ar gas and an O2 gas, wherein the fluorine-based gas is CxFy or CaHbFc, and wherein x, y, a, b and c range from 1 to 10, respectively; and etching the etch target layer using the polymer layer and the photoresist pattern as the etch mask.

Abstract: Methods are provided for delineating different layers and interfaces for inspection of a semiconductor wafer, wherein a sectioned portion of a wafer is subjected to a reactive ion etch process before inspection using a scanning electron microscope.

Abstract: A microphone assembly comprises a microphone, a connector secured to the underside of the microphone. A gasket has a sound collecting hole and is secured on the upper surface of the microphone.

Abstract: A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semiconductor. The ultraviolet rays cause a reaction of oxygen molecules to form stimulated oxygen atoms having a strong oxidative power at the surface.

Abstract: A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc?No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.

Abstract: Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y?x and z?0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.

Abstract: A cleaning process for cleaning the surface of a substrate is disclosed, wherein the surface comprises portions of a dielectric material and portions of a conductive material. According to the method disclosed, the temperature at the surface of the substrate is kept below a predefined value during the actual cleaning step in a reactive and/or inert plasma ambient, such as an argon gas ambient, wherein the predefined value corresponds to the surface temperature at which agglomeration of the conductive material occurs.

Abstract: The subject invention pertains to a method and apparatus for etching copper (Cu). The subject invention can involve passing a halide gas over an area of Cu such that CuX, or CuX and CuX2, are formed, where X is the halide. Examples of halides which can be utilized with the subject matter include, but are not necessarily limited to, Cl, Br, F, and I. Once the CuX, or CuX and CuX2, are formed the subject invention can then involve passing a reducing gas over the area of Cu for a sufficient time to etch away at least a portion of the CuX, or CuX2, respectively. With respect to a specific embodiment in which CuX and CuX2 are produced when the halide gas is passed over the area of Cu, the reducing gas can be passed until essentially all of the CuX2 is etched and at least a portion of the CuX is etched. Examples of reducing gases which can be utilized with the subject invention include, but are not necessarily limited to, hydrogen gas and hydrogen gas plasma.