Abstract: Apparatus and processes are disclosed for milling copper adjacent to organic low-k dielectric on a substrate by directing a charged-particle beam at a portion of the copper and exposing the copper to a precursor sufficient to enhance removal of the copper relative to removal of the dielectric, wherein the precursor contains an oxidizing agent, has a high sticking coefficient and a long residence time on the copper, contains atoms of at least one of carbon and silicon in amount sufficient to stop oxidation of the dielectric, and contains no atoms of chlorine, bromine or iodine. In one embodiment, the precursor comprises at least one of the group consisting of NitroEthanol, NitroEthane, NitroPropane, NitroMethane, compounds based on silazane such as HexaMethylCycloTriSilazane, and compounds based on siloxane such as Octa-Methyl-Cyclo-Tetra-Siloxane. Products of the processes are also disclosed.

Abstract: A narrow track width read sensor having a high magnetoresistive sensitivity is made using a self-aligned process which requires the use of only a single resist mask. A plurality of sensor layers is deposited over a substrate. After forming a resist mask in the central region, first lead layers are deposited in the end regions and over the resist mask. Using the resist mask, ion milling is performed such that the first lead layers and sensor layers in the end regions are substantially removed but sensor layers in the central region remain, to thereby form a read sensor having lead overlays on the edges thereof. Hard bias and second lead layers are then deposited in the end regions and over the resist mask. After the resist mask is removed, the top of the read sensor may be oxidized through an exposure to oxygen plasma.

Abstract: A stamper suppressed in surface roughness, uneven thickness, and deviation of circularity in inner circumference, a method of producing the same, an optical recording medium produced by molding using the stamper, and a method of producing the same, wherein a base member having a mirror polished main surface and comprising silicon or glass is formed with a resist film; the resist film is exposed and developed so as to form a resist film of a pattern corresponding to relief shapes; the mirror surface of the base member is processed to relief shapes (projecting regions and recessed regions) by dry etching etc. using the obtained resist film as a mask so as to obtain a stamper; the obtained stamper is used for injection molding to form a medium substrate; and an optical recording multilayer film and a protective layer are formed to thereby produce an optical recording medium.

Abstract: It comprises the steps of: a) arranging a dielectric substrate (1) with at least one conducting plate (2) joined by an adhesive (8) to at least one of its sides; b) removing areas of said plate (2) by selective chemical milling to provide conducting tracks (5) joined to the substrate (1) and separated by spaces between tracks (6); c) applying and hardening by radiation an electroinsulating filler material (7) to fill said spaces between tracks (6), covering the tracks (5); d) applying an abrasion treatment to obtain flush upper surfaces (3) of the filler material (7) and of the tracks; and e) cooling, after step c) and during step d), the printed circuit board to reduce the temperature of the filler material (7) to under its glass transition temperature.

Abstract: A Focused Ion Beam (FIB) milling end-point detection system uses a constant current power supply to energize an Integrated Circuit (IC) that is to be modified. The FIB is cycled over a conductive trace that is to be accessed during the milling process. The input power, or voltage to the IC is monitored during the milling process. The end-point can be detected when the FIB reaches the conductive trace. The FIB can inject charge onto the conductive trace when the FIB reaches the level of the conductive trace. An active device coupled to the conductive trace can amplify the charge injected by the FIB. The active device can operate as a current amplifier. The change in IC current can result in an amplified change in device input voltage. The end-point can be detected by monitoring the change in input voltage from the constant current power supply.

Abstract: The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.

Abstract: A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is interposed between a hard magnetic biasing layer and the lateral edge of the GMR sensor element. The soft magnetic layer eliminates the need for a seed layer directly between the hard magnetic layer and the GMR element and provides improved coupling to the free layer of the GMR element and a substantial reduction in random domain variations.

Abstract: A method for etching trenches having different depths on a semiconductor substrate includes providing a mask with first and second openings. The first and second openings are located where corresponding first and second trenches are to be etched. A slow-etch region, made of a slow-etch material, is provided above the substrate at a location corresponding to the second opening. When exposed to a selected etchant, the slow-etch material is etched at a rate less than the rate at which the semiconductor substrate is etched when exposed to the selected etchant.

Abstract: The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed through the mill box in a single step using an ion beam in combination with a XeF2 gas for a dwell time of at least 10 milliseconds. The invention dramatically increases the efficiency of Focused Ion Beam milling of copper features embedded in organic layers by milling these features in a gas-depleted environment at significantly increased dwell time while avoiding the problems of graphitization, destruction of the organic layer and metal redeposition.

Abstract: A method for producing a slider for an optical head includes a slider member adapted for floating and running over a recording medium during recording and/or reproduction of information signals for the recording medium. An optical lens is bonded to the slider member and a magnetic field generator provided on a surface of the slider member carrying the optical lens facing the recording medium. A first step is forming a groove presenting a bottom surface inclined in the depth-wise direction by ejecting a polishing agent dispersed in a compressed gas on a substrate. A second step is charging an electrically conductive material, which proves a terminal electrically connected to the magnetic field generator in the inside of the groove formed in the substrate. A third step is cutting the substrate in the vicinity of an end of the groove to form a plurality of individual slider members.

Abstract: A method of making an etched structure in the fabrication of a MEMS device involves depositing a bulk layer, typically of polysilicon, prone to surface roughness. At least one layer of photo-insensitive spin-on planarizing material, such as silicate-based spin-on glass, is formed on the bulk layer to reduce surface roughness. This is patterned with a photoresist layer. A deep etch is then performed through the photoresist layer into the bulk layer. This technique results in much more precise etch structures.

Abstract: A system and method for reducing ion contamination in an object, the ion contamination introduced by a contaminating ion beam milling step. The system includes means for defining a suspected ion contaminated area; and means for removing the suspected ion contaminated area by a non-contaminating process, which usually involves directing an electron beam towards the removed area while allowing the beam to interact with additional material. The method includes the steps of defining a suspected ion contaminated area; and removing the suspected ion contaminated area by non-contaminating process.

Abstract: A method for producing a liquid discharge head provided with a discharge port for discharging liquid, a liquid flow path communicating with the discharge port, and a silicon substrate including a discharge energy generating element for generating energy for liquid discharge and a liquid supply aperture for supplying the liquid flow path with the liquid, the method comprising following steps of: forming an anisotropic etching stop layer in a portion wherein the liquid supply apertures is to be formed on the top side of the substrate; forming an insulation layer on the anisotropic etching stop layer; destructing the crystalline structure under the etching stop layer in the liquid supply aperture forming portion utilizing the insulation layer as a mask, forming, on the rear side of the substrate, an etching mask layer having an aperture corresponding to the liquid supply aperture forming portion on the top side, etching the substrate by anisotropic etching from the aperture until the area where the crystalline s

Abstract: For the laser drilling of organic materials, in particular for making blind holes in dielectric layers, a frequency-doubled Nd-vanadate laser with the following parameters is used: pulse width <40 ns pulse frequency ?20 kHz wavelength =532 nm.

Abstract: A method of manufacturing Er-doped silicon nano-dot arrays and a laser ablation apparatus are provided. In the method, a target having a silicon region and an erbium region is prepared. A silicon substrate is introduced opposite to the target. Laser light is irradiated onto the target, a plume containing silicon ablated from the silicon region and erbium ablated from the erbium region is generated, and an Er-doped silicon film is deposited on the silicon substrate from the plume. The Er-doped silicon film is patterned.

Abstract: Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneous multi-level etching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes.

Abstract: This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.

Abstract: A method of manufacturing a fluid injection device. The method of the present invention applies a compensated geometric shape of the unetched isolating portions to increase the additional compensated portion for etching, or the ion implanting process to reduce the etching rate of the unetched isolating portions. Thus, crosstalk or overshoot in the isolating portions of the fluid injection device can be reduced, and the fluid injection device can be precisely manufactured in a small size.

Abstract: A capacitor is formed utilizing a plasma deposited capacitor dielectric wherein the plasma deposition is a two-component reaction comprising a silicon donor, which is non-carbon containing and non-oxygenated, and an organic precursor, which is non-silicon containing and non-oxygenated. The plasma deposition produces a capacitor dielectric that can exhibit a low dielectric constant and, in selected depositions, a response to photo-oxidation induced by exposure to radiated electromagnetic energy in the presence of oxygen. Photo-oxidation of selected depositions can be used to alter the dielectric constant of the capacitor dielectric after the capacitor has been fabricated. The capacitor may be used in precision filter applications.

Abstract: A wet etching apparatus and method to shorten processing time and to eliminate formation of unintended mask pattern are described. In the conventional art, after a mask pattern is formed, alien substances such as water mist or stain are left on the substrate. The alien substances act as an etching block in the wet etching process. This generates an unintended mask pattern. The present invention uses ultraviolet light to remove the alien substances prior to the etching process. When the alien substances are removed, the intended mask pattern is generated after the etching process. The wet etching device according to the present invention includes an ultraviolet cleaner and a conveyor to convey substrates to and from the ultraviolet cleaner. Spaces for the ultraviolet cleaner and the conveyor are created in the wet etching apparatus by reducing space for cassettes and reducing space required by the loader.

Abstract: A bilayer mask employed for lift off has a top strip which bridges between first and second bilayer portions and is completely undercut so that when one or more materials is sputter deposited the materials do not form fences abutting recessed edges of a bottom layer in undercuts below a top layer. Sacrificial protective layers are formed on a sensor and lead layers for protecting these components while overlapping portions of these materials on the top of the sensor formed during deposition can be removed by ion beam sputtering, after which the sacrificial protective layers can be removed by ion milling or reactive ion etching.

Abstract: A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of the interdigital transducer and the piezoelectric body simultaneously so as to reduce the thickness of the interdigital transducer and the piezoelectric body.

Abstract: A method and apparatus for reducing the sensitivity of semiconductor processing to chamber conditions is provided. Process repeatability of common processes are affected by changing surface conditions which alter the recombination rates of processing chemicals to the chamber surfaces. In one aspect of the invention, a composition of one or more etchants is selected to optimize the etch performance and reduce deposition on chamber surfaces. The one or more etchants are selected to minimize buildup on the chamber surfaces, thereby controlling the chamber surface condition to minimize changes in etch rates due to differing recombination rates of free radicals with different surface conditions and achieve etch repeatability. In another embodiment, the etchant chemistry is adjusted to reduce the change to internal surface conditions after a cleaning cycle. In another embodiment, a process recipe is selected to reduce the sensitivity of the etch process to the chamber conditions.

Abstract: A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.

Abstract: A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of the interdigital transducer and the piezoelectric body simultaneously so as to reduce the thickness of the interdigital transducer and the piezoelectric body.

Abstract: A single-body structure is presented for use as a tool tip for making modifications and/or collecting measurements on a target object. The single-body structure comprises a first end portion, a second end portion opposite the first portion, and a mid portion between the first and second end portions, wherein a central axis can be defined extending from the first end portion to the second end portion, and wherein the single-body structure has a maximum linear dimension of approximately 50 microns or less. The single-body structure may be comprised of diamond. One of the first and second end portions may have a larger cross sectional area, in a plane perpendicular to the central axis, than does the other of the first and second end portions. One of the first and second end portions may have a larger cross sectional diameter, in at least one direction perpendicular to the central axis, than does the other of the first and second end portions.

Abstract: Ions are implanted into a resist pattern for forming a wiring pattern. Argon is employed as the ion species, for performing ion implantation under 50 keV at 1×1016/cm2. Due to the ion implantation, the thickness of the resist pattern contracts to about 334 nm, i.e., about 75% of the thickness of 445 nm before ion implantation, while the composition of the resist pattern changes for improving resistance against etching for a silicon nitride film and a polysilicon layer. Thus obtained is a method of manufacturing a semiconductor device capable of suppressing critical dimension shift density difference (difference between a critical dimension shift on a rough region having a relatively large space width and that on a dense region having a relatively small space width).

Abstract: The present invention is a method of manufacturing a liquid crystal display device, wherein light having an exposure energy is irradiated on the surface of a photo-sensitive resin layer having a predetermined film thickness, and a distribution of thermal deformation characteristics in the thickness direction (or the plane direction) of the photo-sensitive resin layer is formed, then heat treatment is performed to form random undulation (micro-grooves or micro-wrinkles) on the surface of the photo-sensitive resin layer.

Abstract: A process of forming a resist image in a microelectronic substrate comprises the steps of contacting the substrate with a composition first comprising carbon dioxide and a component selected from the group consisting of at least one polymeric precursor, at least one monomer, at least one polymeric material, and mixtures thereof to deposit the component on the substrate and form a coating thereon; then imagewise exposing the coating to radiation such that exposed and unexposed coating portions are formed; then subjecting the coating to a second composition comprising carbon dioxide having such that either one of the exposed or the unexposed coating portions are removed from the substrate and the other coating portion is developed and remains on the coating to form an image thereon.

Abstract: A selective wetting material is formed by plasma depositing a film on a substrate from a two-component reaction of a silicon donor and organic precursor, and photo-oxidizing selected regions of the deposited film to form wetting regions to which a liquid will selectively adhere. When the liquid is an electrically conductive material, the process may be used to form printed circuits on a circuit board. When the substrate is optically transparent and the non-photo-oxidized regions of the film are removed, the process may be used to form a photomask.

Abstract: A method for anisotropically and selectively removing a dielectric thin film layer from a substrate layer is disclosed, wherein the dielectric layer is subjected to ion implantation prior to wet etching. This method may be applied adjacent to a structure such as a gate electrode within a microelectronic structure to prevent undercutting of the dielectric material to be preserved between the gate electrode and the substrate layer, as may happen with more isotropic etching techniques.

Abstract: A micromachined vertical vibrating gyroscope consists of three single crystal silicon assemblies: an outer single crystal silicon assembly, an intermediate single crystal silicon assembly, and an inner single crystal silicon assembly. The outer assembly includes a plurality of arc-shaped anchors arranged in a circle and extending from a single crystal silicon substrate coated with an insulating annulus thereon. The intermediate assembly is a suspended wheel concentric with the arc-shaped anchors. The inner assembly is a suspended hub concentric with the circle formed by the anchors and having no axle at its center. The three assemblies are connected to each other through several flexures. The intermediate suspended wheel is driven into rotational vibration by lateral comb capacitors. Input angular rates are measured by two vertical capacitors.

Abstract: A method for surface preparation of a polycrystalline material prior to etching. The material surface is amorphized by two particle beam bombardments s on the material surface. These energized particles break the crystal structure of the crystalline material and convert it into amorphous material. The two particle beams are oriented to each other at an angle of at least twice of the critical angle of channeling for the most open crystal structure in the material. This ensures amorphization of the material surface regardless of the different grain orientations on the surface. The amorphous surface has isotropic surface properties and thus allows uniform etching. The uniformity in surface properties allows better control over etching process and reduces damage to underlying and adjacent material.

Abstract: A method for surface preparation of a polycrystalline material prior to etching. The material surface is effectively amorphized by two particle beam bombardments on the material surface. These energized particles break the crystal structure of the crystalline material and convert it effectively into an amorphous material. The two particle beams are oriented to each other at an angle of at least twice of the critical angle of channeling for the most open crystal structure in the material. This ensures effective amorphization of the material surface regardless of the different grain orientations on the surface. The amorphized surface has isotropic surface properties and thus allows uniform etching at the second angle. The uniformity in surface properties allows better control over etching process and reduces damage to underlying and adjacent material.

Abstract: A process for milling copper metal from a substrate having an exposed copper surface includes absorbing a halogen gas onto the exposed copper surface to generate reaction products of copper and the halogen gas; removing unreacted halogen gas from the surface; and directing a focused ion beam onto the surface to selectively remove a portion of the surface comprising the reaction products.

Abstract: Provided is a sputtering target, backing plate or apparatus inside a sputtering device in which an electrical discharge machining mark is formed on the face to which unwanted films during sputtering are deposited, and the electrical discharge machining mark is formed from numerous inclined protrusions having a depression angle of less than 90°. When necessary, chemical etching is further performed to the portions subject to such electrical discharge machining. Thereby, the separation and flying of deposits arising from the face to which unwanted films of the target, backing plate and apparatus inside the sputtering device are deposited can be prevented.

Abstract: A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer. The method further includes a step of dry etching the semiconductor layer to form a trench and a step of dry etching a sidewall defining the trench at a portion adjacent to a bottom of the trench to form the movable unit. The later dry etching is implemented with a charge building up on a surface of the insulating layer that is exposed during the former dry etching to etch the portion. In addition, the later dry etching is implemented at an etching rate higher than that at which the former dry etching is implemented to reduce the deposition amount of a protection film deposited on a reverse side of the movable unit during the later dry etching.

Abstract: A method of masking and etching a semiconductor substrate includes forming a layer to be etched over a semiconductor substrate. An imaging layer is formed over the layer to be etched. Selected regions of the imaging layer are removed to leave a pattern of openings extending only partially into the imaging layer. After the removing, the layer to be etched is etched using the imaging layer as an etch mask. In one implementation, an ion implant lithography method of processing a semiconductor includes forming a layer to be etched over a semiconductor substrate. An imaging layer of a selected thickness is formed over the layer to be etched. Selected regions of the imaging layer are ion implanted to change solvent solubility of implanted regions versus non-implanted regions of the imaging layer, with the selected regions not extending entirely through the imaging layer thickness.

Abstract: The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface —irradiation and removal step.

Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

Abstract: A method of etching an organic antireflective film layer underlying a patterned resist layer on a semiconductor substrate by contacting the exposed organic film with a fluorocarbon and nitrogen etchant in the presence of a plasma-generated energy and removing exposed areas of the organic film with the etchant. An oxide layer underlying the organic film layer is substantially undamaged after contact with the etchant. The plasma is a high density plasma and preferably contains argon, C4F8, and nitrogen.

Abstract: A method for magnetic patterning of conductors includes imparting a pattern of magnetization into a magnetic material and depositing a substance onto the magnetic material that preferentially gathers according to the pattern in the magnetic material. A set of conductors are then formed such that the substance controls a pattern for the conductors.

Abstract: The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.

Abstract: The invention provides a method for etching silicon nitride selective to titanium silicide and fabricating multi-level contact openings on a quartermicron device using a two step etch process. The process begins by providing a substrate having thereover a silicon nitride hard mask at one level and a titanium silicide layer at another level wherein the silicon nitride hard mask and the titanium silicide region have an oxide layer thereover. In a first etch step, the oxide layer is patterned to form a first contact opening and a second contact opening. The first contact opening stops on the silicon nitride hard mask and the second contact opening stops on the titanium silicide region. In a second etch step the silicon nitride hard mask is etched through in the first contact opening using an etch selective to titanium silicide. The etch comprises CH2F2 and O2 at a ratio of CH2F2 to O2 of between about 2 and 4.

Abstract: A method and system for eliminating post etch residues is disclosed. In one method embodiment, the present invention recites disposing a surface, having post etch residues adhered thereto, proximate to an electron beam source which generates electrons. The present method embodiment then recites bombarding the post etch residues with the electrons such that the post etch residues are removed from the surface to which the post etch residues were adhered.

Abstract: A method of forming a manifold through a substrate of a printhead substructure is disclosed. The substrate has an ink reservoir-facing side and an opposing transducer-supporting side. The transducer-supporting side of the substrate is introduced to an etchant. A laser beam is used to irradiate the etchant contacting side of the substrate. The irradiated areas of the substrate are thereby etched to define a first portion of the manifold therein. A second portion of the manifold is formed, preferably by sand blasting, to connect to the first portion. A printhead substructure that includes a substrate having a manifold formed according to the method is also disclosed.

Abstract: A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO3 half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence through a planar major surface thereof to form a damage layer at a predetermined distance d below the planar major surface, and detaching a single-crystal wave retarder plate from the bulk crystal by either chemically etching away the damage layer or by subjecting the bulk crystal having the damage layer to a rapid temperature increase to effect thermally induced snap-off detachment of the wave retarder plate. The detached wave retarder plate has a predetermined thickness d dependent on the ion implantation energy.

Abstract: When liquid for recording such as ink is accumulated around ejection ports deviations in ejecting (flying) directions of ink droplets ejected from ejection ports in an ink-jet recording head are observed so that recording results of high quality can not be attained any more. In order to prevent such deviations water-repellent treatments have been employed. The present invention provides a means with a simple ink-jet recording head manufacturing procedure enable to provide an ink-jet recording head at a low cost. In order to provide such ink-jet recording head the following method is proposed.

Abstract: The invention relates to a method for etching an opening, and more precisely, to etching in a silicon plate for creating a nozzle opening. According to the invention, one side of the silicon plate (1) is protected by a protective layer (2), and a recess (5) is made in the protective layer. Etching is made anisotropically through the recess so as to create a cavity (4) in the shape of a truncated pyramid of a predetermined depth in the silicon plate. The cavity is doped so as to create a doped layer (3) at the predetermined depth. The etching is then continued until the bottom surface of the cavity has passed the doped layer. Subsequently, etching is performed from the other side, while a voltage is applied to the doped layer, so as to free the nozzle opening at the other side. The invention enables an accurate control of the surface area of the nozzle opening. Through this, the amount of discharged fluid and the directional precision can be controlled very accurately.

Abstract: This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapor and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapor and/or oxygen.