Irradiating, Ion Implanting, Alloying, Diffusing, Or Chemically Reacting The Substrate Prior To Etching To Change Properties Of Substrate Toward The Etchant Patents (Class 216/62)
  • Patent number: 7921544
    Abstract: A thin-film magnetic head structure has a configuration adapted to manufacture a thin-film magnetic head configured such that a main magnetic pole layer including a magnetic pole end part on a side of a medium-opposing surface opposing a recording medium, a write shield layer opposing the magnetic pole end part so as to form a recording gap layer on the medium-opposing surface side, and a thin-film coil wound about the write shield layer or main magnetic pole layer are laminated. The main magnetic pole layer has an end face joint structure where respective end faces of the magnetic pole end part and a yoke magnetic pole part having a size greater than that of the magnetic pole end part are joined to each other, and a surface with a flat structure on a side closer to the thin-film coil.
    Type: Grant
    Filed: April 7, 2008
    Date of Patent: April 12, 2011
    Assignee: Headway Technologies, Inc.
    Inventors: Yoshitaka Sasaki, Hironori Araki, Shigeki Tanemura, Hiroyuki Ito, Lijie Guan
  • Patent number: 7902076
    Abstract: A method of fabricating a semiconductor device according to one embodiment includes: forming a porous film above a semiconductor substrate; forming an altered layer by applying alteration treatment to a first pattern region of the porous film up to a predetermined depth; forming a first concave portion by etching a second pattern region to a depth deeper than the predetermined depth, the second pattern region at least partially overlapping the first pattern region of the porous film having the altered layer formed therein; and forming a second concave portion by selectively removing the altered layer from the porous film after forming the first concave portion.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: March 8, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tsubasa Imamura
  • Patent number: 7900342
    Abstract: Magnetoresistance sensors with magnetic pinned layers that are pinned by anisotropic etch induced magnetic anisotropies and methods for fabricating the magnetoresistance sensors are provided. The method comprises forming a seed layer structure. The seed layer is etched to form an anisotropic etch along a top surface of the seed layer. A magnetic pinned layer is formed on the top surface of the seed layer structure. The anisotropic etch on the top surface of the seed layer structure induces a magnetic anisotropy in the magnetic pinned layer, which pins the magnetization of the magnetic pinned layer structure.
    Type: Grant
    Filed: February 23, 2007
    Date of Patent: March 8, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: James M. Freitag, Mustafa M. Pinarbasi
  • Patent number: 7895732
    Abstract: An embodiment of the present invention relates to a method of manufacturing a perpendicular magnetic recording having a main pole, return pole and trailing side shield disposed on the trailing side and the cross track direction side of said main pole. A process is described where the main pole has an etching layer in the upper part. The top and sides of the main pole having the etching signal layer in the upper part are covered with a nonmagnetic gap layer while leaving open a region forming the side shield. The nonmagnetic gap layer is then etched until a signal from the etching signal layer is detected by an etching signal detector. The trailing side shield on the top and sides of the nonmagnetic gap layer are then formed after the etching is halted.
    Type: Grant
    Filed: March 15, 2007
    Date of Patent: March 1, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Tomohiro Okada, Isao Nunokawa, Kimitoshi Etoh, Kikuo Kusukawa
  • Patent number: 7892978
    Abstract: A method of imaging and identifying materials, contamination, fabrication errors, and defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas smaller than one micron in diameter, and may remove IC layers, either selectively or non-selectively, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected IC location. The IC has a layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, formed over the surface of the IC. The energetic beam disassociates the reactive material in or on the region into chemical radicals that chemically attack the surface. The surface may be examined as various layers are selectively removed in the controlled area spot etch, and SEM imaging may then be used to diagnose problems.
    Type: Grant
    Filed: July 10, 2006
    Date of Patent: February 22, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Mark J. Williamson, Gurtej S. Sandhu, Justin R. Arrington
  • Patent number: 7887711
    Abstract: A system and method for patterning metal oxide materials in a semiconductor structure. The method comprises a first step of depositing a layer of metal oxide material over a substrate. Then, a patterned mask layer is formed over the metal oxide layer leaving one or more first regions of the metal oxide layer exposed. The exposed first regions of the metal oxide layer are then subjected to an energetic particle bombardment process to thereby damage the first regions of the metal oxide layer. The exposed and damaged first regions of the metal oxide layer are then removed by a chemical etch. Advantageously, the system and method is implemented to provide high-k dielectric materials in small-scale semiconductor devices. Besides using the ion implantation damage (I/I damage) plus wet etch technique to metal oxides (including metal oxides not previously etchable by wet methods), other damage methods including lower energy, plasma-based ion bombardment, may be implemented.
    Type: Grant
    Filed: June 13, 2002
    Date of Patent: February 15, 2011
    Assignee: International Business Machines Corporation
    Inventors: Douglas A. Buchanan, Eduard A. Cartier, Evgeni Gousev, Harald Okorn-Schmidt, Katherine L. Saenger
  • Patent number: 7882618
    Abstract: Methods of fabricating magnetic read heads are provided which reduce the width of the scratch exposure region of a read head. During normal fabrication processes, a read head is formed with a first shield, a read element formed on the first shield, and hard bias layers formed on either side of the read element. The width of the read elements and the hard bias layers define an initial scratch exposure region. According to embodiments herein, a mask structure is formed to protect the read element and first portions of the hard bias layers proximate to the read element. A removal process is then performed to remove second portions of the hard bias layers that are not protected by the mask structure, which defines a final scratch exposure region that is smaller than the initial scratch exposure region.
    Type: Grant
    Filed: December 16, 2007
    Date of Patent: February 8, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: David P. Druist, Mohamad T. Krounbi, David J. Seagle
  • Patent number: 7879730
    Abstract: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: February 1, 2011
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Mehran Naser-Ghodsi, Garrett Pickard, Rudy F. Garcia, Tzu-Chin Chuang, Ming Lun Yu, Kenneth Krzeczowski, Matthew Lent, Sergey Lopatin, Chris Huang, Niles K. MacDonald
  • Patent number: 7877855
    Abstract: A method for forming a vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.
    Type: Grant
    Filed: January 7, 2008
    Date of Patent: February 1, 2011
    Assignees: Industrial Technology Research Institute, National Taiwan University
    Inventors: Chia-Cheng Chuang, Ruey-Beei Wu, Tze-Min Shen
  • Patent number: 7877860
    Abstract: A method of manufacturing a magnetic head includes the steps of forming an underlying layer, forming a pole layer including a track width defining portion at least by plating, using the underlying layer as an electrode, such that the track width defining portion is disposed on the underlying layer, and removing the underlying layer except a portion below the pole layer by ion beam etching. The underlying layer is made of a conductive material whose etching rate of ion beam etching is higher than that of the magnetic alloy used to make the pole layer.
    Type: Grant
    Filed: February 20, 2009
    Date of Patent: February 1, 2011
    Assignee: Headway Technologies, Inc.
    Inventors: Yoshitaka Sasaki, Hiroyuki Itoh, Shigeki Tanemura, Hironori Araki
  • Publication number: 20110006037
    Abstract: In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.
    Type: Application
    Filed: July 9, 2010
    Publication date: January 13, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Naoyuki SATOH, Nobuyuki NAGAYAMA, Keiichi NAGAKUBO
  • Patent number: 7866029
    Abstract: A method for forming a pattern film with a narrower width than the resolution of an exposure machine and a resist used independently of etching is provided. The method comprises the steps of: forming a first frame layer having end surfaces facing each other across a space having a width W1; forming a second frame layer having end surfaces facing each other across a space having a width W2 that is larger than the width W1, the space having the width W2 being located right above the space having the width W1; forming a trench-forming film provided with a trench having a minimum width W3 that is smaller than the width W1 so as to fill at least a part of the spaces having the width W1 and the width W2 respectively; and forming a pattern film so as to fill at least a part of the trench.
    Type: Grant
    Filed: March 22, 2007
    Date of Patent: January 11, 2011
    Assignee: TDK Corporation
    Inventors: Hirotaka Gomi, Mitsuharu Isobe, Noriyuki Ito, Hiroaki Funada, Takeshi Yamana, Makoto Terasawa, Yasuhiro Hasegawa
  • Patent number: 7861401
    Abstract: A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ? to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
    Type: Grant
    Filed: January 27, 2009
    Date of Patent: January 4, 2011
    Assignee: Headway Technologies, Inc.
    Inventors: Hui-Chuan Wang, Tong Zhao, Min Li, Kunliang Zhang
  • Patent number: 7858155
    Abstract: It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6.
    Type: Grant
    Filed: October 27, 2005
    Date of Patent: December 28, 2010
    Assignee: Panasonic Corporation
    Inventors: Tomohiro Okumura, Yuichiro Sasaki, Katsumi Okashita, Cheng-Guo Jin, Satoshi Maeshima, Hiroyuki Ito, Ichiro Nakayama, Bunji Mizuno
  • Patent number: 7849586
    Abstract: A method for making a power inductor comprises providing a first magnetic core comprising a ferrite bead core material, cutting a first cavity and a first air gap in said first magnetic core, and attaching a second magnetic core to said first magnetic core at least one of in and adjacent to said air gap.
    Type: Grant
    Filed: January 6, 2006
    Date of Patent: December 14, 2010
    Assignee: Marvell World Trade Ltd.
    Inventor: Sehat Sutardja
  • Patent number: 7841068
    Abstract: A method of fabricating a single-pole perpendicular magnetic recording head to contain a bevel angle promotion layer that facilitates the fabrication of the bevel angle in a trapezoidal main pole. The bevel angle promotion layer is made of a non-magnetic material that is softer than the material (e.g., Al2O3) that normally underlies the main pole. In one embodiment, the bevel angle promotion layer is formed between an end of the yoke and the air bearing surface (ABS), with the top surface of the bevel angle promotion layer being substantially coplanar with the top surface of the yoke. In other embodiment the bevel angle promotion layer is integrated with a leading edge taper material, which is formed of a magnetic material, to broaden the magnetic flux path between the yoke and the main pole.
    Type: Grant
    Filed: July 2, 2007
    Date of Patent: November 30, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Tsung Yuan Chen, Yimin Hsu, Yinshi Liu
  • Patent number: 7832082
    Abstract: A method for manufacturing an integrated lead suspension component. One or more first conductive ground planes are formed on a stainless steel base layer. One or more second conductive ground planes, including portions on the surface of the first conductive ground planes, are formed at void portions and backed portions of the stainless steel base layer. The material of the second conductive ground planes is non-reactive to a first etchant. An insulating layer is formed on the second ground planes on the side opposite the stainless steel base layer and on the stainless steel base layer. Traces are formed on the insulating layer. Voids are formed in void portions of the stainless steel base layer using the first etchant and the second conductive ground planes at the void portions as etch stops.
    Type: Grant
    Filed: October 10, 2006
    Date of Patent: November 16, 2010
    Assignee: Hutchinson Technology Incorporated
    Inventors: Reed T. Hentges, Kurt C. Swanson, Peter F. Ladwig
  • Patent number: 7832084
    Abstract: A method of recording servo information includes writing servo information in a data storage medium using a compound magnetic recording head. The compound magnetic recording head has a substrate including first and second magnetically permeable substrate portions and a substantially non-magnetic member interposed between the first and second magnetically permeable substrate portions. A magnetically permeable layer is provided over the first and second magnetically permeable substrate portions of the substrate and includes first and second writing gap features associated with the first and second substrate portions. The writing gap features are formed using a patterned mask layer over the magnetically permeable layer, wherein the patterned mask layer comprises first and second patterned gap features corresponding to the first and second writing gap features.
    Type: Grant
    Filed: August 28, 2006
    Date of Patent: November 16, 2010
    Assignee: Advanced Research Corporation
    Inventors: Matthew P. Dugas, Theodore A. Schwarz, Gregory L. Wagner
  • Patent number: 7827659
    Abstract: A method of manufacturing an ink jet recording head. The method includes providing a laminated structure in which a first electrode layer is located on a diaphragm, a piezoelectric layer is located on the first electrode layer, and a second electrode layer is located on the piezoelectric layer and etching the first electrode layer, the second electrode layer and the piezoelectric layer so that a portion of the diaphragm is exposed. In this method, at least the second electrode layer and the piezoelectric layer are etched simultaneously.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: November 9, 2010
    Assignee: Seiko Epson Corporation
    Inventors: Tsutomu Hashizume, Tetsushi Takahashi
  • Patent number: 7827674
    Abstract: A method for providing a giant magneto-resistive (GMR) sensor for use in sensing magnetic flux is provided. The method comprises positioning a layer of Cu material between first and second layers of a specified ferromagnetic material. The respective end surfaces of the Cu layer and the first and second layers are initially located in a common plane and in a co-planar relationship with one another. The method further comprises removing an amount of material from the copper layer to form a new end surface thereof that is selectively spaced apart from the common plane and applying a protective coating to the new end surface of the Cu layer to inhibit corrosion of the Cu layer.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: November 9, 2010
    Assignee: Oracle America, Inc.
    Inventors: John P. Nibarger, Herbert House
  • Patent number: 7810228
    Abstract: An example method for manufacturing a magneto-resistance effect element involves irradiating inert gas ions to enhance an adhesive force between an area around an oxide layer and a metallic layer.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: October 12, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiromi Yuasa, Hideaki Fukuzawa, Yoshihiko Fuji
  • Patent number: 7803280
    Abstract: The invention provides a method in which waviness generated on a glass substrate surface during pre-polishing is removed, thereby finishing the glass substrate to have a surface excellent in flatness. The method for finishing a pre-polished glass substrate uses ion beam etching, gas cluster ion beam etching or plasma etching, the method including: a step of measuring flatness of the glass substrate surface using a shape measurement unit, and a step of measuring a concentration distribution of the dopant contained in the glass substrate. Processing conditions of the glass substrate surface are set up for each site of the glass substrate based on the results obtained from the step of measuring flatness and the step of measuring a concentration distribution of the dopant. Finishing includes keeping an angle formed by a normal line of the glass substrate and an incident beam onto the glass substrate at from 30° to 89°.
    Type: Grant
    Filed: June 1, 2009
    Date of Patent: September 28, 2010
    Assignee: Asahi Glass Company, Limited
    Inventors: Koji Otsuka, Kenji Okamura
  • Patent number: 7797814
    Abstract: A process for the manufacture of small sensors with reproducible surfaces, including electrochemical sensors. One process includes forming channels in the surface of a substrate and disposing a conductive material in the channels to form an electrode. The conductive material can also be formed on the substrate by other impact and non-impact methods. In a preferred embodiment, the method includes cutting the substrate to form a sensor having a connector portion and a transcutaneous portion, the two portions having edges that define one continuous straight line.
    Type: Grant
    Filed: October 30, 2007
    Date of Patent: September 21, 2010
    Assignee: Abbott Diabetes Care Inc.
    Inventors: James Say, Michael F. Tomasco, Adam Heller, Yoram Gal, Behrad Aria, Ephraim Heller, Phillip John Plante, Mark S. Vreeke
  • Patent number: 7793404
    Abstract: A resonant-oscillating-device fabrication method for integrally forming a structure comprising a support, a beam vibratably extending from the support, and an oscillating element which is supported by the beam so as to oscillate in resonance with the vibration of the beam at a desired resonant frequency, by using a substrate. The resonant-oscillating-device fabrication method having a thickness measurement step of measuring the thickness of the substrate, an etching condition determination step of determining conditions of etching a portion forming the beam in the substrate to provide the desired resonant frequency, in accordance with the thickness of the substrate measured in the thickness measurement step, and an etching step of etching the substrate in accordance with the etching conditions.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: September 14, 2010
    Assignee: Brother Kogyo Kabushiki Kaisha
    Inventors: Kenichi Murakami, Nobuaki Asai
  • Patent number: 7794614
    Abstract: One possible embodiment is a method of manufacturing a structure on or in a substrate with the following steps a) positioning at least one spacer structure by a spacer technique on the substrate, b) using at least one of the groups of the spacer structure and a structure generated by the spacer structure as a mask for a subsequent particle irradiation step for generating a latent image in the substrate c) using the latent image for further processing the substrate.
    Type: Grant
    Filed: May 29, 2007
    Date of Patent: September 14, 2010
    Assignee: Qimonda AG
    Inventors: Rolf Weis, Christoph Noelscher
  • Patent number: 7793406
    Abstract: A method for manufacturing a perpendicular magnetic write head having a trailing shield and with a tapered step. The method includes forming a write pole with a non-magnetic trailing gap and first and second non-magnetic side gap layers. A mask is formed having an opening over a portion of the write pole that is configured to define a non-magnetic bump. A non-magnetic bump material is deposited into the opening in a manner that defines a non-magnetic bump having a tapered front edge. A magnetic wrap around shield can then be formed over the non-magnetic bump, so that the bump forms a tapered stepped feature on the wrap-around magnetic shield. The bump location can be controlled by an electric lapping guide, which is defined to be aligned to the bump front edge.
    Type: Grant
    Filed: December 5, 2007
    Date of Patent: September 14, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Yi Zheng
  • Patent number: 7794610
    Abstract: The invention relates to a method for making an actuation system for an optical component comprising: etching of a first face of a component, to form pads on it, etching of a second face of the component, to expose a membrane made of the same material as the pads, production of the actuation means of the pads and the membrane.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: September 14, 2010
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Claire Divoux, Marie-Helene Vaudaine, Thierry Enot
  • Patent number: 7788795
    Abstract: A method for manufacturing a magnetic head that is effective for the suppression of thermal protrusion. The magnetic head includes SiO2, Si nitride, or Si oxide as a coil insulator having a low coefficient of thermal expansion and high workability. The coil insulator is arranged at a position away from the air bearing surface and the air bearing surface is made of alumina, making slider processing easy.
    Type: Grant
    Filed: September 11, 2006
    Date of Patent: September 7, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Kimitoshi Etoh, Hisako Takei, Masayuki Kurita, Yuji Kumazawa
  • Patent number: 7788798
    Abstract: A method for manufacturing a magnetic write head having a wrap around magnetic shield. The method allows a highly accurate short wavelength such as 193 mm photolithography to be used to accurately define the placement and critical dimension of wrap around magnetic shield. The method includes the formation of a magnetic write pole, top gap, and side gap and the deposition of a RIEable fill layer thereover, and CMP to planarization. A 193 nm photolithography and ion milling is used to form a mask over the RIEable layer and one or more reactive ion etching processes are performed to pattern the RIEable layer through 193 nm photolithography mask. A wrap around shield can then be electroplated into the opening formed in the RIEable layer.
    Type: Grant
    Filed: November 21, 2007
    Date of Patent: September 7, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Hung-Chin Guthrie, Ming Jiang, Changqing Shi, Sue Siyang Zhang
  • Patent number: 7788797
    Abstract: A method for making a perpendicular magnetic recording write head that has a write pole, a trapezoidal-shaped trailing shield notch, and a gap between the write pole and notch uses a reactive ion beam etching (RIBE) process in CHF3 that removes filler material at the side edges of the write pole and thus widens the opening at the side edges. The gap is formed of a nonmagnetic mask film, such as alumina, a nonmagnetic metal protective film and a nonmagnetic gap layer. The nonmagnetic metal film is substantially less reactive to CHF3 than the filler material and protects the underlying mask film and write pole during the widening of the opening. The gap layer and trailing shield notch are deposited into a widened opening above the write pole, so the sides of the notch diverge to cause the generally trapezoidal shape.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: September 7, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: John I. Kim, Aron Pentek
  • Patent number: 7790050
    Abstract: A processing method of a polymer product is provided. This method first supplies a gas to an atmospheric pressure plasma machine to generate an ionized gas. Then, bombard the ionized gas to the surface of the polymer product to create a surface reaction. Afterwards, a dying treatment or an electroplating treatment is performed on the polymer product.
    Type: Grant
    Filed: December 27, 2006
    Date of Patent: September 7, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Hsiang Lin, Hsin-Ching Kao, Chi-Lang Wu
  • Patent number: 7788796
    Abstract: A method for constructing a magnetic write head using an electrical lapping guide to carefully control critical dimensions during a lapping operation used to define an air bearing surface. The lapping guide is photolithograhically patterned in a common photolithographic step with another write head structure so that special relation between the lapping guide and critical dimensions of the write head structure can be carefully maintained. The electrical lapping guide can be patterned in a common photolithographic step as the write pole so that the location of the flare point can be carefully controlled with respect to the location of the lapping guide. A stitched flare structure can also be built together with the electrical lapping guide, then a self-aligned shield can be further built over this stitched flare structure so that both flare point and shield throat can be controlled tightly together by this electrical lapping guide during lapping process.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: September 7, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wen-Chien David Hsiao, Ming Jiang, Vladimir Nikitin, Aron Pentek, Yi Zheng
  • Patent number: 7779535
    Abstract: An MR effect element that can obtain the sufficient back flux-guide effect under the condition of reducing the capacitance between the upper and lower electrode layers is provided. The element comprises: an MR effect multilayer provided on the lower electrode layer; an insulating layer surrounding a rear side surface and side surfaces opposed to each other in track width direction of the MR effect multilayer; and an upper electrode layer provided on the MR effect multilayer and the insulating layer, the insulating layer having a concave portion filled with a portion of the upper electrode layer, the concave portion positioned near the rear side surface of the MR effect multilayer, and a bottom point of a concave of the concave portion positioned at the same level or a lower level in stacking direction compared to an upper surface of the free layer.
    Type: Grant
    Filed: November 24, 2006
    Date of Patent: August 24, 2010
    Assignee: TDK Corporation
    Inventors: Takayasu Kanaya, Kazuki Sato
  • Patent number: 7770284
    Abstract: A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes forming on a lower electrode layer an MR multi-layered film having a cap layer at a top thereof, forming a mask on the cap layer of the MR multi-layered film, patterning the MR multi-layered film by milling through the mask to form an MR multi-layered structure, forming a magnetic domain control bias layer by using a lift off method using the mask, after forming the magnetic domain control bias layer, forming an additional cap layer on the cap layer and a part of the magnetic domain control bias layer, planarizing a top surface of the additional cap layer and the magnetic domain control bias layer, and forming an upper electrode layer on the planarized top surface.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: August 10, 2010
    Assignee: TDK Corporation
    Inventors: Naoki Ohta, Takeo Kagami
  • Patent number: 7770281
    Abstract: A method of forming a perpendicular magnetic recording write head having a trailing shield (TS) with a precisely defined throat height (TH) on an air-bearing slider includes depositing an electrical lapping guide (ELG) layer on the substrate adjacent to and spaced from the write pole (WP) layer. A nonmagnetic TS pad layer is deposited on both the gap layer and the ELG layer, with the TS pad layer patterned to have a front edge extending across the both the ELG layer and the gap layer and recessed from the line where the substrate will be later cut to form the slider. An ELG protection layer is patterned on the ELG layer, the TS pad layer material is removed from the ELG layer in the region recessed from the TS pad layer front edge, and the ELG layer is removed in regions not covered by the ELG protection layer.
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: August 10, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Aron Pentek
  • Patent number: 7770283
    Abstract: A multi-step process for notching the P1 pole of the write head element of a magnetic head. In a first step following the fabrication of the P2 pole tip, a layer of protective material is deposited on the approximately vertical side surfaces of the P2 pole tip. Thereafter, a first ion milling step, utilizing a species such as argon, is performed to mill through the write gap layer and to notch into the P1 pole layer therebelow. The removal of redeposited material from the side surfaces of the P2 pole tip is thereafter accomplished and the protective material formed on the side surfaces of the P2 pole tip protects the P2 pole tip during the redeposition clean up step. Thereafter, the protective material is removed from the side surfaces of the P2 pole tip, and a second ion milling step is performed to further notch the P1 pole material.
    Type: Grant
    Filed: February 3, 2006
    Date of Patent: August 10, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Daniel Wayne Bedell, Vladimir Nikitin, Aron Pentek, Sue Siyang Zhang
  • Patent number: 7767104
    Abstract: A fabrication method in thin layers, for example of integrated electronic circuits or MEMS. A correction method allows design errors made for example by photolithography in a thin layer to be repaired, and without necessarily having to utilize a new mask or without having to correct an erroneous mask. A lithography device allows certain of operations of such a method to be employed.
    Type: Grant
    Filed: December 15, 2004
    Date of Patent: August 3, 2010
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Laurent Pain
  • Patent number: 7757380
    Abstract: Methods for improving within wafer and wafer to wafer yields during fabrication of notched trailing shield structures are disclosed. Ta/Rh CMP stop layers are deposited prior to planarization and notch formation to ensure a planar surface for trailing shield structures. These stop layers may be blanket deposited or patterned prior to CMP. Patterned stop layers produce the highest yields.
    Type: Grant
    Filed: November 10, 2006
    Date of Patent: July 20, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Amanda Baer, Hung-chin Guthrie, Yimin Hsu, Ming Jiang, Aron Pentek
  • Patent number: 7748104
    Abstract: A method and structure for reducing corrosion during the manufacture of perpendicular write heads is disclosed. Auxiliary pole structures (otherwise known as trailing shields and wrap around shields) are susceptible to corrosion due to their iron containing composition and small dimensions. The impact of corrosion can be reduced by utilizing a gap material comprising an upper surface of noble metals, which extends from underneath the auxiliary pole and is exposed to the same corrosive environment during processing. The area of the exposed gap material is limited to optimize corrosion protection.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: July 6, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Christian Rene Bonhote, Quang Le, Jui-Lung Li, Scott Arthur MacDonald
  • Patent number: 7716814
    Abstract: Components of a plurality of magnetic heads are formed on a single substrate to fabricate a magnetic head substructure in which a plurality of pre-head portions are aligned in a plurality of rows. The substructure is cut to separate the plurality of pre-head portions from one another, and the plurality of magnetic heads are thereby fabricated. The surface formed by cutting the substructure is lapped to form a lapped surface. The lapped surface is lapped so as to reach a target position of a medium facing surface. The substructure incorporates first to fourth resistor elements each of which detects the position of the lapped surface. The third and fourth detection elements are located at positions shifted from the first and second resistor elements along the direction orthogonal to the medium facing surface.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: May 18, 2010
    Assignees: Headway Technologies, Inc., SAE Magnetics (H.K.) Ltd.
    Inventors: Yoshitaka Sasaki, Hiroyuki Itoh, Kazuo Ishizaki, Ryuji Fujii, Tatsushi Shimizu
  • Patent number: 7655152
    Abstract: An etching method includes applying a first electromagnetic radiation to an area of structure, thereby altering a characteristic of the structure in the area, and applying a second electromagnetic radiation to the structure, the second electromagnetic radiation configured to selectively ablate the structure based on the characteristic.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: February 2, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Curt Nelson, Greg Long
  • Patent number: 7655933
    Abstract: Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.
    Type: Grant
    Filed: July 16, 2007
    Date of Patent: February 2, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Jonathan Gerald England, Richard Stephen Muka, Scott C Holden
  • Patent number: 7631417
    Abstract: Methods and structures for the fabrication of perpendicular thin film heads are disclosed. Prior to the deposition of shield structures, seed layers having anti-reflective properties are utilized, eliminating the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.
    Type: Grant
    Filed: November 10, 2006
    Date of Patent: December 15, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Hieu Lam, Patrick Rush Webb, Yi Zheng
  • Patent number: 7624494
    Abstract: An inertial sensor includes a mesoscaled disc resonator comprised of micro-machined substantially thermally non-conductive wafer with low coefficient of thermal expansion for sensing substantially in-plane vibration, a rigid support coupled to the resonator at a central mounting point of the resonator, at least one excitation electrode within an interior of the resonator to excite internal in-plane vibration of the resonator, and at least one sensing electrode within the interior of the resonator for sensing the internal in-plane vibration of the resonator. The inertial sensor is fabricated by etching a baseplate, bonding the substantially thermally non-conductive wafer to the etched baseplate, through-etching the wafer using deep reactive ion etching to form the resonator, depositing a thin conductive film on the through-etched wafer.
    Type: Grant
    Filed: December 13, 2006
    Date of Patent: December 1, 2009
    Assignees: California Institute of Technology, The Boeing Company
    Inventors: A. Dorian Challoner, Kirill V. Shcheglov
  • Patent number: 7617588
    Abstract: Methods for making devices comprise forming a plurality of transducers on a major surface of a wafer, including forming a plurality of solid layers each having a thickness that is less than one micron; dividing the wafer and the attached transducers into a plurality of units such that each of the units includes a portion of the layers and a substantially planar surface that is substantially perpendicular to the portion of the layers; and removing at least part of the substantially planar surface, including creating, for each transducer, at least one flexible element that is attached the transducer. Conventional problems of connecting a head to the flexure and/or gimbal are eliminated. The heads can be made thinner than is conventional and gimbals and flexures can be more closely aligned with forces arising from interaction with the media surface and from seeking various tracks, reducing torque and dynamic instabilities.
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: November 17, 2009
    Inventor: Mark A. Lauer
  • Patent number: 7610670
    Abstract: A diaphragm assembly used for a condenser microphone has a diaphragm made of a resin film including a metallized film on one surface of a supporter ring. The diaphragm is made by a first step of bonding a ring jig of a larger diameter than the supporter ring to the resin film having the metallized film composed of a ductile metallic material on the one surface via an adhesive without exerting tension on the resin film; a second step of heating and contracting the resin film bonded to the ring jig without applying the tension at a temperature over a glass transition point of a film material; and a third step of bonding the supporter ring to the resin film via an adhesive in a state of exerting predetermined tension on the resin film. The diaphragm assembly is cut out of the resin film after the adhesive becomes hardened.
    Type: Grant
    Filed: June 30, 2006
    Date of Patent: November 3, 2009
    Assignee: Kabushiki Kaisha Audio-Technica
    Inventor: Hiroshi Akino
  • Patent number: 7605063
    Abstract: Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.
    Type: Grant
    Filed: May 10, 2006
    Date of Patent: October 20, 2009
    Assignee: Lam Research Corporation
    Inventors: Robert P. Chebi, Jaroslaw W. Winniczek, Alan J. Miller, Gladys S. Lo
  • Patent number: 7596853
    Abstract: The method of manufacturing a thin film magnetic head includes forming a first recessed portion for insulation and a second recessed portion for contact that reach the substrate through the first insulating layer from a side of the first insulating layer of the substrate having the first insulating layer thereon; forming a second insulating layer on the substrate in the first recessed portion; and forming the lower shield layer in the first recessed portion and a contact portion in the second recessed portion.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: October 6, 2009
    Assignee: TDK Corporation
    Inventors: Kenji Ichinohe, Yosuke Goto
  • Patent number: 7596854
    Abstract: A method is disclosed for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: October 6, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Marie-Claire Cyrille, Wipul Pemsiri Jayasckara, Mustafa Michael Pinarbasi
  • Patent number: 7585424
    Abstract: This invention provides a pattern reversal process for self aligned imprint lithography (SAIL). The method includes providing a substrate and depositing at least one layer of material upon the substrate. A pattern is then established upon the layer of material, the pattern providing at least one exposed area and at least one covered area of the layer of material. The exposed areas are treated to toughen the material and reverse the pattern. Subsequent etching removes the un-toughened material. A thin-film transistor device provided by the pattern reversal process is also provided.
    Type: Grant
    Filed: January 18, 2005
    Date of Patent: September 8, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: Ping Mei