Irradiating, Ion Implanting, Alloying, Diffusing, Or Chemically Reacting The Substrate Prior To Etching To Change Properties Of Substrate Toward The Etchant Patents (Class 216/62)
  • Patent number: 7568278
    Abstract: A method for manufacturing an inductor using a system-in-package (SIP) includes forming a first penetration electrode in a silicon substrate; depositing an insulating film on a first surface of the silicon substrate, and patterning the insulating film to form an inductor hole and a second penetration hole aligned with the first penetration hole; forming an inductor in the inductor hole and a second penetration electrode in the second penetration hole; and depositing a protective film on the insulating film and performing a back grind process such that the first penetration electrode is exposed from a second surface of the silicon substrate, the second surface being opposed to the first surface.
    Type: Grant
    Filed: September 5, 2007
    Date of Patent: August 4, 2009
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Jae-Won Han
  • Patent number: 7569152
    Abstract: A useful layer (1) is initially attached by a sacrificial layer (2) to a layer (3) forming a substrate. Before etching of the sacrificial layer (2), at least a part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched so as to increase the roughness of its doped part. After doping, a mask (9) is deposited on a part of the useful layer (1) so as to delineate a doped zone and a non-doped zone of the surface (4, 5), one of the zones forming a stop after the superficial etching phase.
    Type: Grant
    Filed: July 1, 2004
    Date of Patent: August 4, 2009
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Hubert Grange, Bernard Diem, Sylvie Viollet Bosson, Michel Borel
  • Patent number: 7565733
    Abstract: An improved method for the manufacture of magnetoresistive multilayer sensors is disclosed. The method is particularly advantageous for the production of magnetic tunnel junction (MTJ) sensors, which can be damaged at the air bearing surface by conventional lapping and ion milling. The disclosed process protects the ABS of the magnetoresistive sensor by depositing a diamond like carbon layer which remains in place through ion milling. The DLC layer is removed by oxidation subsequent to the formation of the ABS.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: July 28, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Hardayal Singh Gill, Wipul Pemsiri Jayasekara, Huey-Ming Tzeng, Xiao Z. Wu
  • Publication number: 20090179001
    Abstract: Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.
    Type: Application
    Filed: January 12, 2008
    Publication date: July 16, 2009
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Joy Cheng, Ho-Cheol Kim, Charles T. Rettner, Daniel P. Sanders, Ratnam Sooriyakumaran, Linda Sundberg
  • Patent number: 7559130
    Abstract: A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.
    Type: Grant
    Filed: May 4, 2007
    Date of Patent: July 14, 2009
    Assignee: HRL Laboratories, LLC
    Inventors: Randall L. Kubena, David T. Chang, Jinsoo Kim
  • Patent number: 7552523
    Abstract: A method and system for manufacturing a perpendicular magnetic recording transducer by a process that includes plating is described. The method and system include forming a chemical mechanical planarization (CMP) uniformity structure around a perpendicular magnetic recording pole. The CMP uniformity structure has a height substantially equal to a desired pole height. The method and system also include fabricating an insulator on the CMP uniformity structure and performing a CMP to remove a portion of the insulator. The CMP exposes a portion of the perpendicular magnetic recording pole and planarizes an exposed surface of the perpendicular magnetic recording transducer.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: June 30, 2009
    Assignee: Western Digital (Fremont), LLC
    Inventors: Li He, Jun Liu, Danning Yang, Yining Hu
  • Patent number: 7544622
    Abstract: A contact is defined by an opening etched into borophosphosilicate glass (BPSG) down to a silicon substrate. In a contact cleaning process designed to remove native oxide at the bottom of the contact with little effect on the BPSG, the contact is dipped in an etch retardant before being dipped in a cleaning solution containing both the etch retardant and an etchant. The dip in etch retardant modifies the surface of the BPSG, thereby lessening the enhanced etching experienced during the initiation of the dip into the etchant/etch retardant cleaning solution. Results of a etchant/etch retardant clean, both with and without the prepassivation, can be illustrated on a graph depicting the change in contact diameter as a function of dip time. Specifically, the results define “best fit” lines on that graph.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: June 9, 2009
    Assignee: Micron Technology, Inc.
    Inventor: Satish Bedge
  • Patent number: 7536775
    Abstract: A method for sample preparation. The method includes mechanically polishing portions of an insulating layer over a main pole of a recording head embedded within a sample structure. The insulating layer is polished top down in planar layers perpendicular to an air bearing surface adjoining the main pole. The method also includes selectively wet etching the remaining portions of the insulating layer to expose the main pole, wherein the insulating layer surrounds the main pole. Etching is made without damaging the main pole.
    Type: Grant
    Filed: January 6, 2005
    Date of Patent: May 26, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Phillip J. Peterson, Monica L. Vargas
  • Patent number: 7536776
    Abstract: A fabrication method for thin film magnetic heads, comprises, forming a Current Perpendicular to a Plane (CPP) sensor film over a lower shield and a first chemical mechanical polishing (CMP) stop film over the CPP sensor film, etching the CPP sensor film and forming a track width on the CPP sensor film, and covering at least the etching section of the CPP sensor film with an insulating film. The method further comprises forming a CMP dummy film over the insulating film and a second CMP stop film over the CMP dummy film, exposing the first CMP stop film, and removing the first CMP stop film and the second CMP stop film by oxygen reactive ion etching (RIE) and the CMP dummy film by fluorine RIE, and forming an upper shield film over the insulating film and over the CPP sensor film.
    Type: Grant
    Filed: June 13, 2006
    Date of Patent: May 26, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Nobuo Yoshida, Taku Shintani, Hisako Takei
  • Patent number: 7536778
    Abstract: A method of fabrication is disclosed for a slider having sites for fabrication of a continuous coil having a set of front coils and a set of back coils and a center tab, where the slider includes underpass leads.
    Type: Grant
    Filed: September 5, 2007
    Date of Patent: May 26, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Amanda Baer, Tsung Yuan Chen, David Patrick Druist, Edward Hin Pong Lee
  • Patent number: 7536777
    Abstract: Methods and structures for the fabrication of perpendicular thin film heads are disclosed. Prior to the deposition of shield structures, capped seed layers having a dual layer structure are utilized, improving photo resist adhesion and plated shield adhesion, without the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.
    Type: Grant
    Filed: November 10, 2006
    Date of Patent: May 26, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Hieu Lam, Patrick Rush Webb, Yi Zheng
  • Patent number: 7530159
    Abstract: A method is presented for fabricating a write pole for a magnetic recording head, wherein a photoresist layer is formed on a wafer stack. A target P2 pole configuration is provided, and a photomask having a pattern is produced, and the pattern is transferred to the photoresist to create a patterned photoresist having at least one photoresist channel. A layer of photoresist channel shrinking film used to produce a reduced width photoresist channel in an expanded photoresist. A P2 pole tip is formed within the reduced width photoresist channel. The P2 pole tip is then compared to the target P2 pole configuration to identify distortions, which are then used to produce a distortion-corrected photomask. The distortion-corrected photomask is then used to produce a distortion-corrected expanded photoresist, which is then used to produce a distortion-corrected P2 pole tip.
    Type: Grant
    Filed: June 29, 2006
    Date of Patent: May 12, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Kim Y. Lee, Jyh-Shury Lo
  • Patent number: 7530160
    Abstract: A method for manufacturing a magnetoresistive sensor having improved free layer biasing and track width control. The method includes forming a ferromagnetic pinned layer, and depositing a ferromagnetic film thereover. A layer of Ta is deposited over the ferromagnetic film and a mask is formed over an active sensor area. A reactive ion etch process is performed to remove selected portions of said Ta layer. An etch is then performed to remove selected portions of the ferromagnetic film in unmasked areas and a ferromagnetic refill material is deposited.
    Type: Grant
    Filed: September 5, 2007
    Date of Patent: May 12, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Hardayal Singh Gill
  • Patent number: 7520048
    Abstract: A giant magnetoresistive (GMR) head is formed to include a recess in an overcoat layer that reduces stress on the poles. The process includes depositing a seed layer over the overcoat layer prior to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom is etched in the overcast layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.
    Type: Grant
    Filed: May 31, 2007
    Date of Patent: April 21, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Yunxiao Gao, Aron Pentek, Alan J. Tam, Sue Siyang Zhang
  • Patent number: 7516538
    Abstract: A method of manufacturing a magnetic head is disclosed. The steps of manufacture include the formation of an underlying layer made of a material whose etching rate of ion beam etching is higher than that of a magnetic alloy used to make a pole layer, and the formation of a magnetic layer, which includes a portion of the magnetic layer to be etched that will be formed into a track width defining portion by making its side surfaces sloped through etching. The magnetic layer is formed such that the portion to be etched is disposed on the underlying layer. The side surfaces of the portion to be etched by the ion beam etching are etched so that the magnetic layer is formed into the pole layer and so that the end face of the track width defining portion located in the medium facing surface has a width that decreases with decreasing distance from the substrate.
    Type: Grant
    Filed: September 20, 2004
    Date of Patent: April 14, 2009
    Assignee: Headway Technologies, Inc.
    Inventors: Yoshitaka Sasaki, Hiroyuki Itoh, Shigeki Tanemura, Hironori Araki
  • Patent number: 7509729
    Abstract: A method for making a write pole in a perpendicular magnetic recording write head uses a metal mask to pattern the primary resist and only ion milling during the subsequent patterning steps. A layer of primary resist is deposited over the magnetic write pole material and a metal mask layer is deposited on the primary resist layer. An imaging resist layer is formed on the metal mask layer and lithographically patterned generally in the desired shape of the write pole. Ion milling without a reactive gas is then performed over the imaging resist pattern to pattern the underlying metal mask layer, which is then used as the mask to define the shape of the primary resist pattern. Ion milling with oxygen is then performed over the metal mask pattern to pattern the underlying primary resist. Ion milling without a reactive gas is then performed over the primary resist pattern to form the underlying write pole.
    Type: Grant
    Filed: April 25, 2006
    Date of Patent: March 31, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Donald G. Allen, Amanda Baer, Michael Feldbaum, Hung-Chin Guthrie, Aron Pentek
  • Patent number: 7506430
    Abstract: The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.
    Type: Grant
    Filed: October 27, 2006
    Date of Patent: March 24, 2009
    Assignee: Headway Technologies, Inc.
    Inventors: Jei-Wei Chang, Koichi Terunuma, Youfeng Zheng, Kochan Ju
  • Patent number: 7506429
    Abstract: A magnetoresistive sensor having a well defined track width and method of manufacture thereof.
    Type: Grant
    Filed: February 7, 2005
    Date of Patent: March 24, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Howard Gordon Zolla, Edward Hin Pong Lee, Kim Y. Lee, Tsann Lin, Chun-Ming Wang
  • Patent number: 7506431
    Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method allows the write head to be formed with a write pole having a concave trailing edge. The method further allows the amount of concavity of the trailing edge to be accurately and carefully controlled both within a wafer and between wafers. A write pole is formed using a mask that includes a hard mask, a RIEable layer and an endpoint detection layer. A layer of non-magnetic material (ALD layer) is deposited, and then, an ion milling process is used to remove a portion of the ALD layer disposed over the write pole and mask. A reactive ion etch process is performed to remove the RIEable layer leaving the ALD layer to form non-magnetic side walls with upper portions that extend above the write pole.
    Type: Grant
    Filed: May 3, 2007
    Date of Patent: March 24, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wen-Chien David Hsiao, Yimin Hsu, Vladimir Nikitin, Aron Pentek, Yi Zheng
  • Patent number: 7504623
    Abstract: A milling device is disclosed for the preparation of microscopy specimens or other surface science applications through the use of ion bombardment. The device provides the ability to utilize both gross and fine modification of the specimen surface through the use of high and low energy ion sources. Precise control of the location of the specimen within the impingement beams created by the ion sources provides the ability to tilt and rotate the specimen with respect thereto. Locational control also permits the translocation of the specimen between the various sources under programmatic control and under consistent vacuum conditions. A load lock mechanism is also provided to permit the introduction of specimens into the device without loss of vacuum and with the ability to return the specimen to ambient temperature during such load and unload operation. The specimen may be observed and imaged during all active phases of operation.
    Type: Grant
    Filed: September 20, 2006
    Date of Patent: March 17, 2009
    Assignee: E.A. Fischione Instruments, Inc.
    Inventors: Paul E. Fischione, David W. Smith, Michael R. Scheinfein, Joseph M. Matesa, Thomas C. Swihart, David Martin
  • Patent number: 7497008
    Abstract: An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
    Type: Grant
    Filed: August 24, 2005
    Date of Patent: March 3, 2009
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Tsung Yuan Chen, Frederick Hayes Dill, James Mac Freitag, Kuok San Ho, Wipul Pemsiri Jayasekara, Kim Y. Lee, Mustafa Michael Pinarbasi, Ching Hwa Tsang, Patrick Rush Webb
  • Patent number: 7497095
    Abstract: The invention provides a method for producing a quartz glass jig for use in semiconductor industries, which enables increasing the surface layer cleanliness simply and surely at low cost; it also provides a quartz glass jig improved in surface layer cleanliness. The inventive means for resolution are a method comprising processing a quartz glass raw material into a desired shape by a treatment inclusive of fire working, annealing for stress removal, and cleaning treatment to obtain the final product, the method is characterized by that it comprises performing gas phase etching step and gas phase purification step on the surface layer of the quartz glass jig after applying the annealing treatment for stress removal but before the cleaning treatment, wherein the gas phase purification step is carried out continuously after the gas phase etching step.
    Type: Grant
    Filed: April 13, 2004
    Date of Patent: March 3, 2009
    Assignees: Heraeus Quarzglas GmbH & Co. KG, Shin-Estu Quartz Products Co., Ltd.
    Inventor: Tatsuhiro Sato
  • Patent number: 7494593
    Abstract: A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a predetermined depth to form a buried oxide layer. The buried oxide layer can define a bottom of the single crystal cantilever and tip. Another operation can involve shaping the single crystal cantilever and tip from the substrate above the buried oxide layer.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: February 24, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Chien-Hua Chen, John Chen, Sriram Ramamoorthi
  • Patent number: 7493688
    Abstract: A method for providing a magnetic recording transducer is disclosed. The method includes providing a first pole having front and rear portions and a back gap on the rear portion. The method also includes providing an insulator on the first pole. The method includes providing a write gap and providing a portion of a second pole on at least the write gap. A portion of the write gap resides on the front portion of the first pole. A portion of the insulator covers a portion of the first pole between the portion of the second pole and the back gap. The method also includes providing a mask that covers the back gap and exposes the portion of the second pole and the insulator. The method also includes performing a pole trim that can substantially remove the portion of the insulator covering the remaining portion of the first pole.
    Type: Grant
    Filed: February 13, 2006
    Date of Patent: February 24, 2009
    Assignee: Western Digital (Fremont), LLC
    Inventors: Lei Wang, Liping Ren, Yingjian Chen, Christopher T. Ngo, Ming Zhao
  • Patent number: 7479234
    Abstract: A method is proposed which will enable cavities having optically transparent walls to be produced simply and cost-effectively in a component by using standard methods of microsystems technology. For this purpose, a silicon region is first produced, which is surrounded on all sides by at least one optically transparent cladding layer. At least one opening is then produced in the cladding layer. Over this opening, the silicon surrounded by the cladding layer is dissolved out, forming a cavity within the cladding layer. In this context, the cladding layer acts as an etch barrier layer.
    Type: Grant
    Filed: September 4, 2002
    Date of Patent: January 20, 2009
    Assignee: Robert Bosch GmbH
    Inventors: Hubert Benzel, Heribert Weber, Frank Schaefer
  • Patent number: 7473377
    Abstract: A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
    Type: Grant
    Filed: October 7, 2004
    Date of Patent: January 6, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Tomoyo Yamaguchi, Takashi Fuse, Kiwamu Fujimoto, Masanobu Honda, Kazuya Nagaseki, Akiteru Koh, Takashi Enomoto, Hiroharu Ito, Akinori Kitamura
  • Patent number: 7472471
    Abstract: A method of manufacturing a magnetic head for perpendicular magnetic recording that includes a pole layer and a pole-layer-encasing layer. The method includes the steps of: forming a nonmagnetic layer that will be formed into the pole-layer-encasing layer; forming a polishing stopper layer on the top surface of the nonmagnetic layer, the polishing stopping layer being made of a nonmagnetic conductive material and having a penetrating opening with a shape corresponding to the plane geometry of the pole layer; forming a groove in the nonmagnetic layer by selectively etching a portion of the nonmagnetic layer exposed from the opening; forming a magnetic layer to be the pole layer such that the groove is filled; and polishing the magnetic layer until the polishing stopper layer is exposed, so that the magnetic layer is formed into the pole layer.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: January 6, 2009
    Assignee: Headway Technologies, Inc.
    Inventors: Yoshitaka Sasaki, Hironori Araki, Shigeki Tanemura, Takehiro Horinaka
  • Patent number: 7469467
    Abstract: A perpendicular write head includes a main pole comprising a Durimide/Alumina hard mask formed over a laminate layer process to form the main pole without using a liftoff or chemical mechanical polishing process, thereby avoiding rounding corners of the pole, the main pole being controlled in shape for improved control of critical dimension of track width and angle of the bevel to avoid undesirable adjacent track writing.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: December 30, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Yunxiao Gao, Hung-Chin Guthrie, Ming Jiang, Sue Siyang Zhang
  • Patent number: 7469461
    Abstract: A method for making a diaphragm unit of a condenser microphone includes the steps of: forming a liftoff layer on a substrate; forming an insulator diaphragm film on the liftoff layer; and removing the liftoff layer from the diaphragm film and the substrate so as to separate the diaphragm film from the substrate.
    Type: Grant
    Filed: December 9, 2005
    Date of Patent: December 30, 2008
    Assignee: Taiwan Carol Electronics Co., Ltd.
    Inventors: Chao-Chih Chang, Ray-Hua Horng, Jean-Yih Tsai, Chung-Chin Lai, Ji-Liang Chen
  • Patent number: 7469468
    Abstract: A read/write head for a disk drive having a shorting conductor from a shield of the read element to a conductor that runs from the write element to an external electrical contact pad. This allows for the measurement of the electrical isolation between the read sensor and the read shield via the external contact pads. Such a capability allows the electrical isolation to be measured both during the lapping process and subsequent to the heads being diced into separate sliders. This shorting conductor may be in the form of an internal shorting stud or in the form of an interim conductor that passes through the parting zone between adjacent heads. In the latter case, the shorting conductor is broken when the heads are diced so that a head of this embodiment can only be measured for electrical isolation prior to dicing.
    Type: Grant
    Filed: January 18, 2006
    Date of Patent: December 30, 2008
    Assignee: Maxtor Corporation
    Inventors: Ralph W. Cross, Chris Broussalian
  • Patent number: 7467460
    Abstract: A slider manufacturing method includes: providing a row bar constructed from multiple slider bodies having a surface for forming an air bearing surface (ABS); forming multiple cutting lines on the surface for forming an ABS of the row bar; forming a stress absorption region adjacent to the cut line in a cutting region defined by two adjacent cutting lines; grinding the surface for forming an ABS of the row bar; and cutting the row bar along the cutting lines to form multiple individual sliders. When the row bar is cut by a cutter into multiple individual sliders along the cutting lines, stress generated in the cutting region adjacent to cutting lines during cutting is partly or fully absorbed by the stress absorption region, reducing the chances of clear edge jumps forming at the edges of the ABS of the slider after the cutting, and disk surface scratching by the slider.
    Type: Grant
    Filed: January 26, 2007
    Date of Patent: December 23, 2008
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventors: ZhiHua Tan, QuanBao Wang, YanZeng Ma
  • Patent number: 7464457
    Abstract: Methods for forming write heads. One method includes forming a mask layer above a pole tip layer; forming a layer of resist above the mask layer; patterning the resist; removing portions of the mask layer not covered by the patterned resist; shaping a pole tip from the pole tip layer; depositing a layer of dielectric material above the pole tip and flux shaping layer, wherein the layer of dielectric material extends about adjacent to the mask layer; depositing a stop layer over the dielectric material, the stop layer abutting the mask layer; and polishing for forming a substantially planar upper surface comprising the mask layer and stop layer. Another method includes depositing a layer of dielectric material at least adjacent the pole tip, wherein the layer of dielectric material extends about adjacent to the mask layer. A further method includes forming dishing in the pole tip.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: December 16, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Quang Le, Edward Hin Pong Lee, Jui-Lung Li, Aron Peniek, Nian-Xiang Sun
  • Patent number: 7464458
    Abstract: A perpendicular magnetic write head having a notched, self aligned trailing shield for canting a magnetic field emitted therefrom.
    Type: Grant
    Filed: July 30, 2007
    Date of Patent: December 16, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Quang Le, Aron Pentek
  • Patent number: 7461445
    Abstract: A method for fabricating a non-electroplated shield using combination patterning and devices formed thereby are disclosed. The method includes depositing a metal layer, such as CZT, removing substantially 75% of the metal layer during a first phase using at least a first removal process and removing a remaining portion of the metal layer during a second phase using at least a second removal process. The first removal process may include depositing a first patterning layer, removing substantially 75% of the metal layer by ion-mill or similar technology and stripping the first patterning layer away. The second removal process may include depositing a second patterning layer and removing the remaining portion of the metal layer using a wet-etch or other etch process and removing the second patterning layer. The deposited metal layer may have a thickness up to several ?m and the edges of the shield exhibit a unique step pattern that is visible in a cross-section view of the shield.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: December 9, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands, BV
    Inventor: April D. Hixson-Goldsmith
  • Patent number: 7454828
    Abstract: A method for measuring recession in a wafer undergoing an asymmetrical ion mill process. The method includes the formation of first and second reference features and possibly a dummy feature. The reference features are constructed such that the location of the midpoint between them is unaffected by the asymmetrical ion mill. By measuring the distance between a portion of the dummy feature and the midpoint between the reference features, the amount of recession of the dummy feature can be measured. The measurement can be used to calculate the relative location of the flare to the read sensor rear edge through overlay information. By keeping the angles of the sides of the features steep (ie. nearly parallel with the direction in which the ion mill is asymmetrical) the amount of material consumed on each of the reference features is substantially equal and the midpoint between the reference features is substantially stationary.
    Type: Grant
    Filed: November 23, 2005
    Date of Patent: November 25, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Sukhbir Singh Dulay, Justin Jia-Jen Hwu, Thao John Pham
  • Patent number: 7452477
    Abstract: The invention relates to a procedure for etching of materials at the surface by focussed electron beam induced chemical reaction at the surface, with the following steps: a) in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules and at least one first beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction takes place and forms a reaction product, which is not gaseous/not volatile—reaction step. The invention is characterized in that b) the reaction product is evaporated from said surface by an second beam of electrons, which heats the material locally to a temperature above the vaporisation temperature of the reaction product —removal step—.
    Type: Grant
    Filed: July 28, 2003
    Date of Patent: November 18, 2008
    Assignee: NaWoTec GmbH
    Inventors: Hans Wilfried Peter Koops, Klaus Edinger
  • Patent number: 7444740
    Abstract: A method and system for manufacturing a pole for a magnetic recording head. The method and system include providing an insulator and fabricating at least one hard mask on the insulator. The at least one hard mask has an aperture therein. The method and system also include removing a portion of the insulator to form a trench within the insulator. The trench is formed under the aperture. The method and system further include depositing at least one ferromagnetic material. The pole includes a portion of the ferromagnetic material within the trench.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: November 4, 2008
    Assignee: Western Digital (Fremont), LLC
    Inventors: Ki Sup Chung, Kyusik Sin, Danning Yang, Yingjian Chen, Brant Nease
  • Patent number: 7441321
    Abstract: An ultrasonic transducer device comprising: an ultrasonic transducer array micromachined on a substrate; flexible electrical connections connected to the transducer array; and a body of acoustically attenuative material that supports the substrate and the flexible electrical connections. The acoustic backing material may contain additional features, such as tabs or notches, for use in positioning the transducer on fixtures during manufacturing or positioning the transducer within a housing during final assembly. Tabs or other features that are used only during manufacturing may be subsequently removed from the device. The MUT device itself may also be thinned so as to provide flexibility as desired. The backing material is preferably matched in acoustic impedance to the silicon wafer so as to prevent reflection at the interface of any acoustic energy propagating rearward, i.e., in the direction away from the device front surface.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: October 28, 2008
    Assignee: General Electric Company
    Inventors: Charles E. Baumgartner, David M. Mills, Robert S. Lewandowski, Lowell Scott Smith, Douglas G. Wildes
  • Patent number: 7438822
    Abstract: A plasma etching system having a wafer chuck with a magnet that applies a magnetic field over a wafer to shield the wafer from charged particles. The magnetic field is parallel with the wafer, and is strongest near the wafer surface. The magnetic field may be straight, or circular. In operation, electrons are deflected from the wafer by the Lorentz force, the wafer acquires a positive charge, and ions are deflected by electrostatic repulsion. Neutral species are allowed through the magnetic field, and they collide with the wafer. Neutral species generally provide more isotropic and material-selective etching than charged particles, so the present magnetic field tends to increase etch isotropy and material selectivity. Also, the magnetic field can protect the wafer from seasoning processes designed to clean unwanted films from the chamber surface as seasoning processes typically rely on etching by charged particles.
    Type: Grant
    Filed: October 28, 2005
    Date of Patent: October 21, 2008
    Assignee: International Business Machines Corporation
    Inventors: Hongwen Yan, Brian L. Ji, Siddhartha Panda, Richard Wise, Bomy A. Chen
  • Patent number: 7438824
    Abstract: To make high quality long-range periodic nanostructures in a transparent or semi-transparent substrate, the transparent or semi-transparent substrate is scanned with a linearly polarized laser beam generated by a femtosecond laser and exceeding a predetermined energy/pulse threshold along a scanning path. Sub-diffraction limit structures are formed as periodic planes of modified material in the transparent or semi-transparent substrate extending along the scanning path. The modified material can then be chemically etched to form cavities.
    Type: Grant
    Filed: March 24, 2006
    Date of Patent: October 21, 2008
    Assignee: National Research Council of Canada
    Inventors: Rod Taylor, Paul Corkum, Ravi Bhardwaj Vedula, Eli Simova, David Rayner, Cyril Hnatovsky
  • Patent number: 7434305
    Abstract: A silicon condenser microphone package is disclosed. The silicon condenser microphone package comprises a transducer unit, substrate, and a cover. The substrate includes an upper surface having a recess formed therein. The transducer unit is attached to the upper surface of the substrate and overlaps at least a portion of the recess wherein a back volume of the transducer unit is formed between the transducer unit and the substrate. The cover is placed over the transducer unit and includes an aperture.
    Type: Grant
    Filed: August 19, 2004
    Date of Patent: October 14, 2008
    Assignee: Knowles Electronics, LLC.
    Inventor: Anthony D. Minervini
  • Patent number: 7431855
    Abstract: An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the photoresist, and subsequently removing the chemically altered photoresist with a third reactant. In one example, the first reactant is supercritical carbon dioxide (SCCO2), the second reactant is ozone vapor, and the third reactant is deionized water.
    Type: Grant
    Filed: November 14, 2003
    Date of Patent: October 7, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Donggyun Han, Woosung Han, Changki Hong, Sangjun Choi, Hyungho Ko, Hyosan Lee
  • Patent number: 7418778
    Abstract: A CPP thin-film magnetic head includes a bottom shield layer; a top shield layer, the bottom shield layer and the top shield layer being disposed at a predetermined interval; a thin-film magnetic head element between the bottom shield layer and the top shield layer; an insulating layer behind the thin-film magnetic head element in the height direction and disposed between the bottom shield layer and the top shield layer; and a metal layer in the insulating layer, the top shield layer including a first top shield sublayer on the thin-film magnetic head element; and a second top shield sublayer behind the first top shield sublayer in the height direction, the second top shield sublayer and the bottom shield layer being conductively connected through the metal layer, wherein a current flows in the direction orthogonal to a surface of a layer constituting the thin-film magnetic head element.
    Type: Grant
    Filed: May 24, 2005
    Date of Patent: September 2, 2008
    Assignee: TDK Corporation
    Inventor: Yoshihiro Nishiyama
  • Patent number: 7398591
    Abstract: The present invention relates to a manufacturing method of a thin-film magnetic head whereby re-deposition and an overlapped part in a region of a magnetoresistive effect multi-layered structure opposite to an air bearing surface can be removed and also a width of a free layer can be narrowed.
    Type: Grant
    Filed: October 25, 2004
    Date of Patent: July 15, 2008
    Assignee: TDK Corporation
    Inventors: Takeo Kagami, Takayasu Kanaya, Noriaki Kasahara, Kazuki Sato
  • Patent number: 7395595
    Abstract: A method for forming a P3 layer with NiFe and alumina mask using resist shrink process for use in perpendicular magnetic write heads. The method includes forming a laminated layer, forming an alumina layer on top of the laminated layer, depositing a conductive layer onto the laminated layer, forming a plating frame on a gap layer. The plating frame has a trench defined by plating track, the alumina, laminated and conductive layers each including an area below the trench. The method further includes shrinking the trench, plating NiFe into a portion of the shrunk trench, stripping the plating frame, removing the conductive layer except the conductive layer formed below the trench, removing the alumina layer except the alumina layer formed below the trench, removing the laminated layer except the laminated layer formed below the trench and patterning the laminated layer formed below the trench.
    Type: Grant
    Filed: April 19, 2005
    Date of Patent: July 8, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Kim Yang Lee, Jyh-Shuey Lo, Yi Zheng
  • Patent number: 7392579
    Abstract: A slider mounted CPP GMR or TMR read head sensor is protected from electrostatic discharge (ESD) damage and from noise and cross-talk from an adjacent write head by means of a balanced resistive/capacitative shunt. The shunt includes highly resistive interconnections between upper and lower shields of the read head and a grounded slider substrate and a low resistance interconnection between the lower pole piece of the write head and the substrate. The capacitances between the pole piece and the upper shield, the upper shield and the lower shield and the lower shield and the substrate are made equal by either forming the shields and pole piece with equal surface areas and separating them with dielectrics of equal thicknesses, or by keeping the ratio of area to insulator thicknesses equal.
    Type: Grant
    Filed: March 7, 2005
    Date of Patent: July 1, 2008
    Assignees: Headway Technologies, Inc., SAE Magnetics (HK) Ltd.
    Inventors: Eric Cheuk Wing Leung, Anthony Wai Yuen Lai, Pak Kin Wong, David Hu, Moris Dovek, Rod Lee
  • Patent number: 7394067
    Abstract: Systems and methods for reducing alteration of a specimen during by charged particle based and other measurements systems are provided. One system configured to reduce alteration of a specimen during analysis includes a vacuum chamber in which the specimen is disposed during the analysis and an element disposed within the vacuum chamber. A surface of the element is cooled such that molecules in the vacuum chamber are adsorbed onto the surface and cannot cause alteration of a characteristic of the specimen during the analysis. One system configured to analyze a specimen includes an analysis subsystem configured to analyze the specimen while the specimen is disposed in a vacuum chamber and an element disposed within the vacuum chamber. A surface of the element is cooled such that molecules in the vacuum chamber are adsorbed onto the surface and cannot cause alteration of a characteristic of the specimen during the analysis.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: July 1, 2008
    Assignee: KLA-Tencor Technologies Corp.
    Inventors: David Soltz, Paul Wieczorek, Aaron Zuo, Gabor Toth
  • Patent number: 7390753
    Abstract: A novel, in-situ plasma treatment method for eliminating or reducing striations caused by standing waves in a photoresist mask, is disclosed. The method includes providing a photoresist mask on a BARC (bottom anti-reflective coating) layer that is deposited on a feature layer to be etched, etching the BARC layer and the underlying feature layer according to the pattern defined by the photoresist mask, and subjecting the photoresist mask to a typically argon or hydrogen bromide plasma before, after, or both before and after etching of the BARC layer prior to etching of the feature layer. Preferably, the photoresist mask is subjected to the plasma both before and after etching of the BARC layer.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: June 24, 2008
    Assignee: Taiwan Semiconductor Mfg. Co., Ltd.
    Inventors: Li-Te Lin, Yui Wang, Huan-Just Lin, Yuan-Hung Chiu, Hun-Jan Tao
  • Patent number: 7389578
    Abstract: Embodiments in accordance with the present invention relate to methods wherein when a main pole is processed by using an ion milling technique, a re-adhesion layer created on the side face of the resist mask is removed with certainty. In one embodiment, an inorganic insulator from 5 nm to 100 nm which is soluble in an alkaline is arranged between the main pole material and a mask for processing the main pole material, and the main pole is processed by ion milling. After this process, the mask is peeled off, a surface treatment is performed by using an alkaline solution, resulting in the re-deposition film being removed.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: June 24, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Kimitoshi Etoh, Kikuo Kusukawa, Hisashi Kimura, Tomohiro Okada
  • Patent number: 7370405
    Abstract: A thin film magnetic head for perpendicular recording of a single-pole type has a flux enhanced part and a flux enhanced end arranged on a leading side of the main pole in parallel with the cross track direction. The side surface of the main pole intersecting the cross track direction is arranged on the track center side perpendicular to the track width. The field gradient of a perpendicular magnetic field on the trailing side of the main pole and near both ends of the track is made steep to realize a higher areal recording density. The head is fabricated by forming a first resist pattern on an inorganic insulating layer. A slope is formed on the inorganic insulating layer with the resist pattern as a mask. A second resist pattern is then formed on the inorganic insulating layer to form a magnetic layer on the inorganic insulating layer.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: May 13, 2008
    Assignee: Hitachi Global Storage Technologies Japan, Ltd.
    Inventors: Atsuko Kuroda, Masafumi Mochizuki