Abstract: An impedance-type chip for real-time sensing sweat pressure, a micro-control system, and method thereof are provided for monitoring a physiological state of a subject. The impedance-type chip includes a substrate, a pair of comb-shaped electrodes, a first double-layered junction plate, a microfluidic channel plate, a second double-layered junction plate, and a sealing plate. Each the comb-shaped electrodes has a plurality of sub-electrodes and is disposed on the substrate to provide different impedance values. The first double-layered junction plate is disposed on the substrate, the microfluidic channel plate is disposed on the first double-layered junction plates, and the second double-layered junction plate is disposed on the microfluidic channel plate, wherein the first double-layered junction plate, the microfluidic channel plate, and the second double-layered junction plate have a microfluidic channel with a cavity.

Abstract: A shape memory actuator including: a monolithic shape memory alloy; a shape memory effect (SME) section of the alloy, configured for actuation; a pseudo-elastic (PE) section of the alloy, configured as a sensor for enabling position sensing; and a control system configured to control the actuator by controlling a current through at least the SME section based on the sensor results of the PE section. A method of controlling a shape memory actuator, the method including: applying a predetermined current through the actuator; measuring a first resistance of the SME section; measuring a second resistance of the PE section; calculating an estimated position of the actuator based on the first and second resistances; and adapting the current applied to the actuator based on the estimated position. A method of manufacturing a shape memory actuator, the method including: laser processing; thermomechanically treating; and training the shape memory alloy.

Abstract: A semiconductor device that includes a fin structure of a type III-V semiconductor material that is substantially free of defects, and has sidewalls that are substantially free of roughness caused by epitaxially growing the type III-V semiconductor material abutting a dielectric material. The semiconductor device further includes a gate structure present on a channel portion of the fin structure; and a source region and a drain region present on opposing sides of the gate structure.

Abstract: A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method comprises: rotating a polishing table supporting a polishing pad; and polishing the substrate by pressing the substrate against a polishing surface of the polishing pad by a polishing head, wherein polishing the substrate includes: an oscillation polishing process of polishing the substrate while causing the polishing head to oscillate along the polishing surface; and a static polishing process of polishing the substrate with the oscillation of the polishing head stopped, the static polishing process is performed after the oscillation polishing process, and the static polishing process comprises determining a static polishing end point which is a point in time at which a rate of change of torque for rotating the polishing table has reached a change-rate threshold value.

Abstract: A system includes a CMP carrier that includes a resilient flexible membrane upon which a wafer is mounted, at least three ports for supplying air to the resilient flexible membrane to pneumatically pushing on the wafer through pressure applied throughout the surface area of the resilient flexible membrane to have more uniform pressure. Each port provides pressure to different components of the carrier to adjust pressure or vary pressure during processing of the wafer. Further, the system includes a processor and software program for implementing the CMP carrier with existing CMP machines. The software application converts the air pressure applied to the carrier into units that allow the CMP machine to receive expected data and operate in accordance with the existing commands.

Abstract: Methods and systems for automated monitoring of sensors associated with a tool used in a manufacturing process are described. Sensor health may be evaluated based on the sensor's actual responses to set point changes. Rather than interrupt operation of the tool to determine whether one or more sensors are behaving in a predictable manner over an applicable range of operating conditions, pairs of set point values and sensor responses may be collected during the manufacturing process and stored in a time-indexed manner. A virtual model may be created for each sensor using selected ones of the indexed pairs and represented as points in an orthogonal coordinate system to identify a predictable operating region corresponding to the operating range. If a sensor response to a set point change, reflected in a stored, time indexed pair, is non-linear or offset relative to the predictable operating region, an alarm may be generated.

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

Abstract: A method of thinning a substrate and a method of thinning a display panel are disclosed. In the method of thinning the display panel, the display panel includes an upper substrate and a lower substrate disposed opposite to each other; the method includes: forming an adhesive layer between two surfaces of the upper substrate and the lower substrate which are face to face, the adhesive layer fills a gap between the upper substrate and the lower substrate, extends and overlays a part of a side surfaces of the display panel; and removing part of the display panel which corresponds to remaining part of the side surface non-overlaid by the adhesive layer.

Abstract: The present disclosure discloses a mobile scanning device for retrieving stress information of one of a plurality of reinforced glass panels. The device includes an image capturing device to capture an image of an identification code installed on a surface of the one of the plurality of reinforced glass panels, an image processor to process the captured image and recognize the identification code, a central processor to instruct the mobile scanning device to retrieve stress information corresponding to the identification code from a glass panel production information database, and a display device to display the retrieved stress information. The stress information was obtained via at least one stress sensor testing a stress at different testing locations on a surface of each of a plurality of glass panels being processed on a production line for manufacturing the plurality of reinforced glass panels.

Abstract: According to an embodiment, a polishing device which polishes a surface of a polishing target, includes a sensor, an end point detector, and an end point condition setter. The sensor senses a characteristic value correlated with a state of the surface during polishing. The end point detector detects that the characteristic value or a polishing time satisfies an end point condition corresponding to an end point of the polishing. The end point condition setter sets the end point condition in accordance with at least one of device information about the polishing device and polishing target information about the polishing target, and outputs the set end point condition to the end point detector.

Abstract: A system includes a probe assembly, a camera, and a control system. The probe assembly includes a rigid substrate, a compliant layer provided on the rigid substrate, one or more rigid probes can be arranged on the compliant layer to cover at least a portion of the compliant layer, and a reflective layer can cover the one or more rigid probes and uncovered portions of the compliant layer. The camera is configured to generate image data from the probe assembly. The control system is configured to receive image data from the camera and develop a topographical image of a surface of a sample, based at least in part on the received image data.

Abstract: A magnetic sensor whose output characteristic is less sensitive to the environmental temperature is provided. Magnetic sensor 1 has free layer 24 whose magnetization direction changes in response to an external magnetic field, pinned layer 22 whose magnetization direction is fixed with respect to the external magnetic field, spacer layer 23 that is located between pinned layer 22 and free layer 24 and that exhibits a magnetoresistance effect, and at least one magnet film 25 that is disposed on a lateral side of free layer 24 and that applies a bias magnetic field to free layer 24. A relationship of 0.7 ?TC_HM/TC_FL?1.05 is satisfied, where TC_HM is Curie temperature of the magnet film, and TC_FL is Curie temperature of the free layer.

Abstract: A notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer; isolating the notch; and selectively etching the notch to provide an etched surface of the notch; wherein at least a portion of the re-melt material layer has been removed from the notch. In one aspect, there is provided a notch treatment method for flaw simulation including providing the specimen with the notch, the notch having a re-melt material layer, the specimen includes steel or an alloy thereof; isolating the notch; and selectively etching the notch with a first etching solution and a second etching solution to provide an etched surface on the notch; wherein at least a portion of the re-melt material layer has been removed from the notch.

Abstract: Described herein is a technique capable of uniformly processing substrates. According to the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a gas supply configured to supply a gas into the process chamber; a plasma generator configured to plasma-excite the gas supplied into the process chamber, the plasma generator including an electrode electrically connected to a high frequency power source; an impedance meter configured to measure an impedance of the plasma generator; a determiner configured to determine an amount of active species generated by the plasma generator based on the impedance measured by the impedance meter; and a controller configured to control the high frequency power source based on the amount of active species determined by the determiner.

Abstract: Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.

Abstract: A substrate processing method for removing a resist from a substrate, the substrate comprising a surface layer which has been cured, and having a pattern disposed inside the resist. The method includes an SPM supplying step of supplying an SPM, formed by mixing sulfuric acid and a hydrogen peroxide solution, to the substrate and a liquid temperature increasing step of changing, in parallel to the SPM supplying step, a mixing ratio of the sulfuric acid and the hydrogen peroxide solution used to form the SPM to increase the liquid temperature of the SPM supplied to the substrate in the SPM supplying step.

Abstract: A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.

Abstract: A polishing object is prevented from slipping out without depending on the process type or the polishing condition.

Abstract: A polishing method is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. A method of polishing a substrate by a polishing apparatus includes a polishing table (100) having a polishing surface, a top ring (1) for holding a substrate and pressing the substrate against the polishing surface, and a vertically movable mechanism (24) for moving the top ring (1) in a vertical direction. The top ring (1) is moved to a first height before the substrate is pressed against the polishing surface, and then the top ring (1) is moved to a second height after the substrate is pressed against the polishing surface.

Abstract: The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.

Abstract: Provided is an etching method including: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece. The etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.

Abstract: A solid-state image pickup device, including: a plurality of pixels; a separation structure provided along a boundary line adjacent to the plurality of pixels; the separation structure includes a groove provided from a back surface of the semiconductor substrate to a depth corresponding to a wavelength, the groove being positioned along the boundary line, a first separation layer provided in the groove, and a second separation layer provided above the first separation layer and corresponding to the boundary line, the second separation layer being connected to the first separation layer; and methods including the same.

Abstract: The invention allows determining a local change of an admixture concentration in a fluid flow at an entrance to a measurement cell. The change of the admixture concentration in time inside the measurement cell is first determined for a fluid containing the admixture, the change of concentration of which in time at the entrance to the measurement cell is known. Then, an impulse response of the cell is found applying the deconvolution method. The change of the admixture concentration inside the measurement cell is then determined for a fluid being studied with an unknown concentration of the admixture at the entrance. The unknown concentration is determined using the impulse response of the measurement cell and the change of the admixture concentration inside the cell.

Abstract: The present invention provides a novel method of manufacturing the probe unit and a tip assemble and disassemble procedure for test tools, which includes a body with a joint portion and a base portion and a probe tip extending from one side of the base portion opposite to the joint portion, where the probe tip and the base portion are integrally made of same material different from the material of the joint portion.

Abstract: A method of generating reference spectra includes polishing a first substrate in a polishing apparatus, measuring a sequence of spectra from the first substrate during polishing with an in-situ optical monitoring system, for each spectrum in the sequence of spectra, determining a best matching reference spectrum from a first plurality of first reference spectra to generate a sequence of reference spectra, calculating a value of a metric of fit of the sequence of spectra to the sequence of reference spectra, comparing the value of the metric of fit to a threshold value and determining whether to generate a second library based on the comparison, and if the second library is determined to be generated, storing the sequence of spectra as a second plurality of reference spectra.

Abstract: The inventive substrate treatment apparatus includes a spin chuck which horizontally holds and rotates a wafer; a heater which is disposed in opposed relation to a lower surface of the wafer held by the spin chuck and heats the wafer from a lower side; a phosphoric acid nozzle which spouts a phosphoric acid aqueous solution to a front surface (upper surface) of the wafer held by the spin chuck; and a suspension liquid nozzle which spouts a silicon suspension liquid to the front surface of the wafer held by the spin chuck. The wafer is maintained at a higher temperature on the order of 300° C. and, in this state, a liquid mixture of the phosphoric acid aqueous solution and the silicon suspension liquid is supplied to the front surface of the wafer.

Abstract: A plasma or serum separator (10) for isolating plasma or serum from whole blood, comprises: a blood separation member (12), configured for separating blood applied to a first portion such that the plasma or serum of the blood is located in a second portion; a holding member (14) covering and holding the blood separation member (12); a blood introducing portion (16) formed in a portion of the holding member (14) covering the first portion; a plasma or serum sampling aperture (18) formed in a portion of the holding member (14) covering the second portion; and at least one plasma or serum collecting cavity (22) arranged at the second portion in fluid communication with the plasma or serum sampling aperture (18) for collecting plasma or serum leaving the blood separation member (12) through the plasma or serum sampling aperture (18).

Abstract: A process and method for welding using an oxygen and propylene gas mixture is disclosed herein. Landing gear components may be welded together using this oxygen and propylene gas fuel source. For instance, an axle beam and/or a post of an aircraft may be welded using oxygen and propylene gas fuel source.

Abstract: The presence of a detectable entity within a detection volume of a microfabricated elastomeric structure is sensed through a change in the electrical or magnetic environment of the detection volume. In embodiments utilizing electronic detection, an electric field is applied to the detection volume and a change in impedance, current, or combined impedance and current due to the presence of the detectable entity is measured. In embodiments utilizing magnetic detection, the magnetic properties of a magnetized detected entity alter the magnetic field of the detection volume. This changed magnetic field induces a current which can reveal the detectable entity. The change in resistance of a magnetoresistive element may also reveal the passage of a magnetized detectable entity.

Abstract: A method and apparatus is disclosed for producing precision marks for a metrological scale in the form of a stainless steel ribbon. A laser is used to produce ultra-short pulses which have a fluence at the ribbon such that ablation takes place. The laser light can be scanned via scanner and the pitch of the marks can be controlled. The ablative technique causes little thermal input and improves the accuracy of the scale.

Abstract: A method including a) forming a through-hole in a dummy substrate including a surface by radiating a laser to the surface of the dummy substrate in a state where the dummy substrate is moved relative to the laser along a direction parallel to the surface of the dummy substrate, b) determining an angle ? (?90°<?<+90°) of the through-hole relative to a line perpendicular to the surface of the dummy substrate, and c) forming a through-hole in the insulating substrate with the same conditions as step a) except for radiating a laser at an angle ? relative to a line perpendicular to a surface of the insulating substrate. The angle ? is set to be line symmetric with the angle ? relative to the line perpendicular to the surface of the insulating substrate and satisfy a relationship of ?=??.

Abstract: Combinatorial workflow is provided for evaluating cleaning processes after forming a gate structure of transistor devices, to provide optimized process conditions for gate stack formation, including metal gate stack using high-k dielectrics. NMOS and PMOS transistor devices are combinatorially fabricated on multiple regions of a substrate, with each region exposed to a different cleaning chemical and process. The transistor devices are then characterized, and the data are compared to categorize the potential damages of different cleaning chemicals and processes. Optimized chemicals and processes can be obtained to satisfy desired device requirements.

Abstract: A method for etching a workpiece may be provided, which may include: determining a plurality of reference etch profiles for a plurality of positions of an etchant dispenser, each reference etch profile corresponding to a respective position of the plurality of positions of the etchant dispenser; determining a thickness profile of the workpiece; determining a respective etch duration for each position of the plurality of positions of the etchant dispenser based on the determined thickness profile and the plurality of reference etch profiles, to reduce a total thickness variation of the workpiece; and dispensing an etchant over the workpiece via the etchant dispenser for the determined respective etch duration for each position of the plurality of positions.

Abstract: The presence of a detectable entity within a detection volume of a microfabricated elastomeric structure is sensed through a change in the electrical or magnetic environment of the detection volume. In embodiments utilizing electronic detection, an electric field is applied to the detection volume and a change in impedance, current, or combined impedance and current due to the presence of the detectable entity is measured. In embodiments utilizing magnetic detection, the magnetic properties of a magnetized detected entity alter the magnetic field of the detection volume. This changed magnetic field induces a current which can reveal the detectable entity. The change in resistance of a magnetoresistive element may also reveal the passage of a magnetized detectable entity.

Abstract: A method of fabricating a semiconductor device includes dressing a surface of a polishing pad with a conditioning disk held by an arm while rotating a platen that holds the polishing pad in a chemical mechanical polishing apparatus, wherein the dressing is performed by pressing the conditioning disk to the polishing pad, and rotating the arm around a rotational axis of the arm thereby to move the conditioning disk substantially along a radius direction of the platen between a center part and a circumferential part of the platen, and wherein torque N applied to the arm is measured at plural positions of the conditioning disk along the substantial radius direction during the dressing, and it is determined whether maintenance to the arm is necessary in accordance with an average value <N> of the measured torques N and a fluctuation range Y of the measured torques N.

Abstract: A computer implemented method of monitoring a polishing process includes, for each sweep of a plurality of sweeps of an optical sensor across a substrate undergoing polishing, obtaining a plurality of current spectra, each current spectrum of the plurality of current spectra being a spectrum resulting from reflection of white light from the substrate, for each sweep of the plurality of sweeps, determining a difference between each current spectrum and each reference spectrum of a plurality of reference spectra to generate a plurality of differences, for each sweep of the plurality of sweeps, determining a smallest difference of the plurality of differences, thus generating a sequence of smallest difference, and determining a polishing endpoint based on the sequence of smallest differences.

Abstract: According to one embodiment, provided is a template including a first pattern that is to be transferred to a processing target and is arranged on a transfer region defined on a first principal surface of a template substrate. The template includes a second pattern that is used to measure a position and arranged on a second principal surface of the template substrate opposite to the first principal surface.

Abstract: A method and system for tunable removal rates and selectivity of materials during chemical-mechanical polishing using a chemical slurry or solution with increased dissolved oxygen content. The slurry can optionally include additives to improve removal rate and/or selectivity. Further selectivity can be obtained by varying the concentration and type of abrasives in the slurry, using lower operating pressure, using different pads, or using other additives in the dispersion at specific pH values.

Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.

Abstract: A protective chuck is disposed on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region against a fluid layer covering the substrate surface. In some embodiments, the pressure fluctuation at the gas layers is monitored, and through the dynamic feedback, the gas flow rate can be adjusted to achieve a desired operation regime. The dynamic control of operation regime setting can also be applied to high productivity combinatorial systems having an array of protective chucks.

Abstract: A protective chuck is disposed on a substrate with a gas bearing layer between the bottom surface of the protective chuck and the substrate surface. The gas bearing layer protects a surface region against a fluid layer covering the substrate surface. The protection of the gas bearing is a non-contact protection, reducing or eliminating potential damage to the substrate surface due to friction. The gas bearing can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: A method for calibrating a high frequency measuring device so as to accurately measure plasma processing parameters within a chamber. A calibration parameter is calculated from a first set of three reference loads measured by a high frequency measurement device. A second calibration parameter is calculated from S parameters measured between a connection point where the high-frequency measuring device is connected and the inside of the chamber of a plasma processing device. A second set of three reference loads, which include the impedance previously calculated and encompass a range narrower than that encompassed by the first set of three reference loads, is measured with the reference loads in the chamber.

Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

Abstract: Disclosed is an etchant composition employed for selectively etching a metallic material in production of a semiconductor device, which is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. Also disclosed is a method for producing a semiconductor device employing the etchant composition.

Abstract: An etchant is supplied to a workpiece. Furthermore, the workpiece is irradiated with spatially modulated light to adjust a temperature profile of said workpiece while etchant is supplied.

Abstract: The invention relates to a method for in-line measuring the active KOH concentration in a KOH etching process in which process silicon hydroxide is produced by a reduction reaction according to the formula: 2K+ (aq.)+2OH? (aq.)+2H2O+Si?2K+ (aq.)+H2SiO42? (aq.)+2H2 (g). The total concentration of KOH bath is measured by using a refractometer and the measurement result is corrected by the estimated K2H2SiO4 concentration.

Abstract: A protective chuck is magnetically levitated on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region of the substrate against a fluid layer covering the remaining of the substrate surface without contacting the substrate, reducing or eliminating potential damage to the substrate surface. The magnetically levitated protective chuck can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: A substrate comprises a first mark and a second mark. The first mark comprises a first pattern with at least one mark feature formed by a first material and at least one region formed by a second material. The first and second materials have different material characteristics with respect to a substrate treatment process such that a step height in a direction substantially perpendicular to the surface of the substrate may be created by applying the substrate treatment process. The second mark can be provided with a second step height by applying the substrate treatment process. The second step height is substantially different from the first step height.

Abstract: Combinatorial workflow is provided for evaluating cleaning processes after forming a gate structure of transistor devices, to provide optimized process conditions for gate stack formation, including metal gate stack using high-k dielectrics. NMOS and PMOS transistor devices are combinatorially fabricated on multiple regions of a substrate, with each region exposed to a different cleaning chemical and process. The transistor devices are then characterized, and the data are compared to categorize the potential damages of different cleaning chemicals and processes. Optimized chemicals and processes can be obtained to satisfy desired device requirements.

Abstract: A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput.