Abstract: The method of manufacturing silicon wafers from one or more silicon blocks or bricks includes etching at least one lateral surface of a silicon block or brick using a mixture of highly oxidative acids and then forming a plurality of wafers by sawing the silicon block or brick. During the etching of the lateral surface a mean amount of material removed is 3 to 160 ?m thick and the material is isotropically removed with a constant mean material removal speed of from 1 to 20 ?m/min across the entire lateral surface. Prior to the etching treatment the silicon block or brick is advantageously subjected to an abrasive grinding or polishing. The mixture of acids is preferably a mixture of 50 to 70% nitric and 40 to 60% hydrofluoric acids in a ratio range of 8:1 to 4:1.

Abstract: A method for etching Si anisotropically uses a solution containing NH4F and HF.

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract: An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

Abstract: The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide. The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.

Abstract: A method of processing nature pattern on expitaxial substrate, unlike the conventional method of processing regular pattern on expitaxial substrate (such as sapphire substrate) by lithography, wet etches a sapphire substrate directly to obtain a nature pattern, so as to simplify the fabrication process. Compared with the conventional way of processing pattern sapphire, the nature pattern sapphire substrate produced by the method can avoid voids between the interface of sapphire and GaN and apply this technology to a wired bond LED structure to increase the sidewall light extraction and improve the texture of the sapphire surface of a flip chip LED structure. In addition, this method also can be applied to a thin-GaN LED for achieving the surface texture after the sapphire is removed by laser.

Abstract: A method of forming a nozzle rim for a nozzle aperture is provided. The method is suitable for forming part of a printhead fabrication process. The method comprises the steps of: (a) depositing a roof material layer over a sacrificial layer; and (b) removing a first part of said roof material layer so as to form a nozzle rim.

Abstract: The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.

Abstract: A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.

Abstract: A surface cleaning method of a semiconductor wafer heat treatment boat that can prevent metallic contamination to semiconductor wafers and keep down a production time and manufacturing costs of semiconductor wafers by efficiently and easily removing metallic impurities in an oxide film on an SiC boat surface is provided. A surface cleaning method of a semiconductor wafer heat treatment boat according to an embodiment of the present invention is a surface cleaning method of a semiconductor wafer heat treatment boat whose surface is formed of SiC, includes oxidizing the surface of the heat treatment boat by thermal oxidation and etching a portion of the oxide film formed after oxidation is removed.

Abstract: The present invention relates to a wet etching composition including a sulfonic acid, a phosphonic acid, a phosphinic acid or a mixture of any two or more thereof, and a fluoride, and to a process of selectively etching oxides relative to nitrides, high-nitrogen content silicon oxynitride, metal, silicon or silicide. The process includes providing a substrate comprising oxide and one or more of nitride, high-nitrogen content silicon oxynitride, metal, silicon or silicide in which the oxide is to be etched; applying to the substrate for a time sufficient to remove a desired quantity of oxide from the substrate the etching composition; and removing the etching composition, in which the oxide is removed selectively.

Abstract: In etching of silicon nitride with a phosphorus type, if etching is carried for a long time, silicon oxide tends to precipitate, and it has been impossible to constantly carry out the etching for a long period of time. By an etching method for silicon nitride using a composition comprising a phosphorus compound, a boron compound, a silicon compound and/or their fluorides thereof, there will be no precipitation of silicon oxide even when the composition is used for a long time. It is particularly preferred to further add nitric acid and/or a nitrate, whereby stability of selectivity will be increased.

Abstract: A method of producing a MEMS device removes the bottom side of a device wafer after its movable structure is formed. To that end, the method provides the device wafer, which has an initial bottom side. Next, the method forms the movable structure on the device wafer, and then removes substantially the entire initial bottom side of the device wafer. Removal of the entire initial bottom side effectively forms a final bottom side.

Abstract: A technique for fabricating the required surface shapes for micro optical elements, such as curved micro mirrors and lenses, starts with a simple, binary for example, approximation to the desired surface shape. Then polishing, e.g., chemical mechanical polishing (CMP), is used to form the smooth optical surface. Specifically, starting with a mesa or blind hole, with a mesa profile, a smooth mirror or lens structure is fabricated.

Abstract: A dual-tank etch method which is suitable for the stripping of a silicon nitride layer from a pad oxide layer provided on a substrate, and etching of the pad oxide layer to a desired target thickness, is disclosed. The method includes providing a first processing tank containing a silicon nitride-stripping chemical; stripping the silicon nitride layer from the pad oxide layer by placing the substrate in the first processing tank; providing a second processing tank containing an oxide-etching chemical; and etching the pad oxide layer to the desired target thickness by placing the substrate in the second processing tank. By carrying out the pad oxide-etching step and the silicon nitride-stripping step in separate processing tanks, accumulation of silicon oxide precipitates in the second processing tank is avoided.

Abstract: It is an object of the present invention to control damage of a phosphor caused by an etching solution. Disclosed is a method of manufacturing a phosphor having the steps of: (a) crushing phosphor particles via a crushing treatment process, and (b) surface-treating phosphor particles dispersed in a solvent by adding an etching solution via a surface treatment process, wherein an adding speed of the etching solution is in a range of 1.2×10?16-7.0×10?15 mol/min. per 1 m2 of specific surface area of the phosphor particles.

Abstract: Ophthalmic surgical blades are manufactured from either a single crystal or poly-crystalline material, preferably in the form of a wafer. The method comprises preparing the single crystal or poly-crystalline wafers by mounting them and etching trenches into the wafers using one of several processes. Methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, a hot forge press and a router. Other processes include wet etching (isotropic and anisotropic) and dry etching (isotropic and anisotropic, including reactive ion etching), and combinations of these etching steps. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single, double or multiple bevel blades. Nearly any angle can be machined into the wafer, and the machined angle remains after etching.

Abstract: The invention concerns a method of wet chemical etching of a wafer comprising at least one surface layer of silicon-germanium (SiGe) for etching by dispensing an etching solution deposited on a rotating wafer, the method being characterized in that it comprises a first etching step in which said etching solution is dispensed from a fixed position located at a predetermined distance from the center of the wafer, and a second etching step in which the etching solution is dispensed radially from the center of the wafer and over a maximum distance which is less than the radius of said wafer.

Abstract: A method for producing predetermined shapes in a crystalline Si-containing material that have substantially uniform straight sides or edges and well-defined inside and outside corners is provided together with the structure that is formed utilizing the method of the present invention. The inventive method utilizes conventional photolithography and etching to transfer a pattern, i.e., shape, to a crystalline Si-containing material. Since conventional processing is used, the patterns have the inherent limitations of rounded corners. A selective etching process utilizing a solution of diluted ammonium hydroxide is used to eliminate the rounded corners providing a final shape that has substantially straight sides or edges and substantially rounded corners.

Abstract: Ophthalmic surgical blades are manufactured from either a crystalline or polycrystalline material, preferably in the form of a wafer. The method comprises preparing the crystalline or polycrystalline wafers by mounting them and machining trenches into the wafers. Methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, a hot forge press and a router. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or polycrystalline material are removed uniformly, producing single, double or multiple bevel blades. Nearly any bevel angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5-500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost.

Abstract: A method for cleaning a process chamber in such a manner that chamber-cleaning chemicals or agents are incapable of remaining in the chamber after cleaning and chemically interfering with semiconductor fabrication or other processes subsequently carried out in the chamber. The method includes providing a repellant coating layer having a hydrophobic or hydrophilic polarity on the interior surfaces of a process chamber and using a cleaning agent having a polarity opposite that of the repellant coating layer to clean the chamber. Accordingly, the cleaning agent removes post-processing chemical residues from the interior chamber walls and other surfaces and is incapable of adhering to the surfaces and remaining in the chamber upon commencement of a subsequent process carried out in the chamber.

Abstract: An ink jet printhead chip that is manufactured in accordance with an integrated circuit fabrication technique includes a wafer substrate that defines a plurality of nozzle chambers as a result of an etching process. An etch stop layer is positioned on a front side of the wafer substrate so that portions of the etch stop layer define a roof wall for each nozzle chamber, each said portion defining at least one ink ejection port, also a result of an etching process carried out on each portion. A plurality of actuators are arranged on a back side of the wafer substrate, each actuator being operatively positioned relative to each respective nozzle chamber to eject ink from the nozzle chambers.

Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Abstract: The present invention relates to a novel printable etching medium having non-Newtonian flow behaviour for the etching of surfaces in the production of solar cells and to the use thereof. In particular, the invention relates to corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas.

Abstract: Composition and a process using the composition for selectively wet etching metal including depositing metal on a silicon surface; applying energy to cause respective portions of the metal and silicon to form silicide, leaving a quantity of unreacted metal; selectively wet etching the unreacted metal by applying to the unreacted metal a composition including HCl, HBr, an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; a stabilizer for the nitrogen oxide, comprising a glycol, a glyme, an ether, a polyol or a mixture of any two or more thereof; and water. In one embodiment, the composition includes an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; and water.

Abstract: An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.

Abstract: The tiltable-body apparatus including a frame member, a tiltable body, and a pair of torsion springs having a twisting longitudinal axis. The torsion springs are disposed along the twisting longitudinal axis opposingly with the tiltable body being interposed, support the tiltable body flexibly and rotatably about the twisting longitudinal axis relative to the frame member, and include a plurality of planar portions, compliant directions of which intersect each other when viewed along a direction of the twisting longitudinal axis. A center of gravity of the tiltable body is positioned on the twisting longitudinal axis of the torsion springs.

Abstract: A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench and at the trench opening is removed without removing the fill material disposed over the bottom of the trench. The fill material along the sidewall and at the trench opening may be removed without removing the fill material disposed over the bottom of the trench by inhibiting a reaction between an etchant and the fill material over the bottom of the trench. The reaction between the etchant and the fill material may be inhibited by causing an air bubble to form at the bottom of the trench. The air bubble may be formed by inverting the substrate, and immersing the inverted substrate in an etchant.

Abstract: An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).

Abstract: An etching liquid used for selectively etching silicon nitride, the etching liquid includes: water; a first liquid that can be mixed with the water to produce a mixture liquid having a boiling point of 150° C. or more; and a second liquid capable of producing protons (H+). Alternatively, an etching liquid includes: water; phosphoric acid; and sulfuric acid, the phosphoric acid and the sulfuric acid having a volume ratio of 300:32 to 150:300.

Abstract: A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.

Abstract: An ink jet head includes a substrate having a flow path construction member constructing a plurality of discharge ports for discharging ink and a plurality of ink flow paths corresponding thereto, and a plurality of energy generating elements corresponding to the plurality of discharge ports. The substrate has an ink supply port for supplying ink to the ink flow paths. The ink supply port includes a first liquid chamber disposed on a plane on which the energy generating elements are formed, and having a grooves with island-shaped columns left, and a second liquid chamber disposed on the opposed plane, and having a plurality of through holes partitioned at positions corresponding to the island-shaped columns. In the ink jet head, the island-shaped columns and a partition wall for the through holes are left as a beam construction section, thereby improving a mechanical strength of a semiconductor substrate.

Abstract: A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditions and for a period of time effective to etch the elemental silicon from the substrate. Wet etching can be employed in methods of forming trench isolation, and in other methods. Other aspects and implementations are contemplated.

Abstract: A method of manufacturing a nozzle plate 2 is disclosed. The nozzle plate 2 has a plurality of nozzle openings 22 through each of which a droplet is adapted to be ejected. The method includes the steps of: preparing a processing substrate (silicon substrate 10) constituted from silicon as a main material, the processing substrate having two major surfaces; providing a supporting substrate 50 for supporting the processing substrate onto one major surface of the processing substrate 50; and forming the plurality of nozzle openings 22 on the other major surface of the processing substrate by subjecting the other major surface of the processing substrate to an etching process while the processing substrate is supported by the supporting substrate 50.

Abstract: The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.

Abstract: The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.

Abstract: A method for releasing a micromechanical structure. A substrate is provided. At least one micromechanical structural layer is provided above the substrate, wherein the micromechanical structural layer is sustained by a sacrificial layer of a silicon material. An amine-based etchant is provided to etch the silicon material. That is, during performing a post-cleaning procedure with an amine-based etchant, polymer residue and the sacrificial layer of silicon can be simultaneously removed without any additional etching processes.

Abstract: A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.

Abstract: The tiltable-body apparatus including a frame member, a tiltable body, and a pair of torsion springs having a twisting longitudinal axis. The torsion springs are disposed along the twisting longitudinal axis opposingly with the tiltable body being interposed, support the tiltable body flexibly and rotatably about the twisting longitudinal axis relative to the frame member, and include a plurality of planar portions, compliant directions of which intersect each other when viewed along a direction of the twisting longitudinal axis. A center of gravity of the tiltable body is positioned on the twisting longitudinal axis of the torsion springs.

Abstract: A silicon oxide film is formed on one principal surface of a silicon substrate by thermal oxidation, and thereafter, a silicon nitride film is formed on the silicon oxide film by CVD. A lamination layer of the silicon oxide film and silicon nitride film is selectively dry etched to form a mask opening 22 and leave an etching mask made of a left region of the lamination layer. The substrate is selectively and anisotropically etched with alkali etchant such as TMAH by using the etching mask to form a substrate opening. By setting a ratio of the thickness of the silicon oxide film to the thickness of the silicon nitride film to 1.25 or larger or preferably 1.60 or larger, it is possible to prevent the deformation of the etched shape of the inner walls of the openings and cracks in the etching mask.

Abstract: The present invention illustrates a bulk silicon etching technique that yields straight sidewalls, through wafer structures in very short times using standard silicon wet etching techniques. The method of the present invention employs selective porous silicon formation and dissolution to create high aspect ratio structures with straight sidewalls for through wafer MEMS processing.

Abstract: A new method is provided for the creation of an inductor. Layers of pad oxide, a thick layer of dielectric and an etch stop layer are successively created over the surface of a substrate. The layers of etch stop material and dielectric are patterned and etched, creating an inductor pattern whereby the inductor pattern created in the layer of dielectric is located close to the surface of the layer of dielectric. Optionally, support pillars for the inductor can be created at this time through the layer of dielectric. The inductor pattern in the layer of dielectric is filled with metal, the etch stop layer and the layer of dielectric is removed from above the metal fill, additionally exposing the layer of dielectric. The additionally exposed layer of dielectric is etched using a slope etcher.

Abstract: A selective etching method with lateral protection function is provided. The steps includes: (a) providing a substrate; (b) forming a plurality of tunnels; (c) forming a lateral strengthening structure at a peripheral wall of the tunnels; (d) removing a bottom portion of the lateral strengthening structure, and a part of the substrate by an etching process so as to form a lower structure and expose an unstrengthened structure; and (f) etching the unstrengthened structure laterally so as to form an upper structure.

Abstract: A first chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, and an oxide film removal retarder which reduces a removal rate of the silicon oxide film. A second chemical mechanical polishing (CMP) slurry includes a polishing agent, an oxidant, a pH control additive, an oxide film removal retarder which reduces a removal rate of silicon oxide, and a defect prevention agent which inhibits scratch defects and/or corrosion defects at a surface of an aluminum film. In a one-step CMP process, either of the first or second slurry is used throughout CMP of an aluminum layer until an upper surface of an underlying silicon oxide layer is exposed. In a two-step CMP process, the first slurry is used in an initial CMP of the aluminum layer, and then the second slurry is used in a subsequent CMP until the upper surface of the underlying silicon layer is exposed.

Abstract: The invention relates to a method for forming silicon atomic force microscope tips. The method includes the steps of depositing a masking layer onto a first layer of doped silicon so that some square or rectangular areas of the first layer of doped silicon are not covered by the masking layer, etching pyramidal apertures in the first layer of doped silicon, removing the masking layer, depositing a second layer of doped silicon onto the first layer of doped silicon, the second layer of doped silicon being oppositely doped to the first layer of doped silicon and etching away the first layer of doped silicon. Further steps may be added to form the atomic force microscope tips at the end of cantilevers.

Abstract: The described embodiments relate to a slotted substrate and methods of forming same. One exemplary method patterns a hardmask on a first substrate surface sufficient to expose a first area of the first surface and forms a slot portion in the substrate through less than an entirety of the first area of the first surface. The slot portion has a cross-sectional area at the first surface that is less than a cross-sectional area of the first area. After forming the slot portion, the method etches the substrate to remove material from within the first area to form a fluid-handling slot.

Abstract: A regeneration process is disclosed for an etching solution composed of a phosphoric acid solution and used in etching silicon nitride films in an etch bath. As a result of the etching, the etching solution contains a silicon compound. According to the regeneration process, the etching solution with a silicon compound contained therein is taken out of the etch bath. Water is then added to the taken-out etching solution to lower a concentration of phosphoric acid in the etching solution to 80 to 50 wt. %. By the lowing of the concentration of phosphoric acid, the silicon compound is caused to precipitate. The thus-precipitated silicon compound is removed from the etching solution. An etching process making use of the regeneration process and an etching system suitable for use in practicing the regeneration process and etching process are also disclosed.

Abstract: A method for fabricating an optical device and micromechanical device, wherein both devices are monolithically-integrated with a substrate. The optical surfaces and micromechanical devices are each formed in an etch step that is well-suited for forming that device. In addition, the embodiments of the present invention enable the optical surface and micromechanical device to be fabricated irrespective of severe topography on the surface of the substrate.

Abstract: The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in electronics industry. The surface treatment agent roughens the surface of copper and copper alloys. Particularly, the surface treatment agent can form a uniform and undulation-free roughened surface on copper-clad substrates having plated mirror surface, this having been difficult in conventional techniques, thereby significantly improving the adhesion to etching resists, solder resists, in addition, to prepregs and a resin for mounting electronic parts.