Abstract: The present invention provides a method for recovering flatness of a web material which comprises heating a side edge portion of the web material at a temperature in a range from a glass transition temperature minus 40.degree. C. to a melting point of the web material for a period of from 1 to 600 seconds, and an apparatus for recovering flatness of a web material which comprises a plurality of conveying rollers for conveying the web material and a side edge portion heating means which surrounds and heats the side edge portion of the web material traveling through conveying rollers. According to the method and apparatus, the side edge portion(s) elongated by the previous heat treatment is recovered to a state similar to the central portion by reheating to correct the side edge portion(s), and thereby, flatness of the web material can be improved.

Abstract: A compact oven assembly has a housing and a high power density, low mass heating element. The housing defines a cooking cavity and a slot which permits access to the cooking cavity. The high power density, low mass heating element is supported by the housing above the cooking cavity. The compact oven assembly may include a food support which is arranged so that, when the food support is inserted into the cooking cavity through the slot, the slot of the housing is substantially closed off. The compact oven may also include a switch operated by the food support when the food support is inserted into the cooking cavity through the slot in order to energize the high power density, low mass heating element. Each high power density heating element has a formed parabolic reflector located above it and opposite to the cooking plane. Accordingly, the energy from the high power density heating elements is directed toward the cooking plane.

Abstract: One embodiment of the instant invention is a process chamber for heating a semiconductor wafer, the process chamber comprising: heating elements (elements 104 of FIG. 2a) for providing heating energy; means for holding (means 112 of FIG. 2a) the semiconductor wafer; and shutters situated between the heating elements and the means for holding the semiconductor wafer, the shutters (shutters 108 of FIGS. 2a and 2b and shutters of FIGS. 2c and 2d for blocking the heating energy from getting to the semiconductor wafer when the shutters are in a closed position and for directing the heating energy to the semiconductor wafer when in an open position.

Abstract: A heating apparatus and method for welding a superalloy article. In a preferred embodiment, the apparatus and method entail welding a superalloy article within an enclosure equipped with a thermal radiation-generating device that preheats the article to a temperature of at least 1500.degree. F. prior to welding. The invention more particularly provides a thermally-reflective coating on a reflector member positioned adjacent the thermal radiation-generating device for the purpose of reflecting thermal radiation emitted by the device into the enclosure. The device is then operated to heat the superalloy article to a suitable temperature, e.g., 1500.degree. F. or more, after which a welding operation is performed on the superalloy article.

Abstract: A plurality of substrates is closely stacked together in a Rapid Thermal Processing (RTP) chamber, and the stack is processed simultaneously.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material, such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate.

Abstract: A substrate heating apparatus having a housing forming a substrate receiving chamber and a heater located inside the chamber. The heater has a thin film flat ribbon heater element sandwiched between two glass-ceramic panels.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction.

Abstract: A RTP system and method. A first lamp zone (108) is located around a periphery of a wafer (102) for heating the center of the wafer (102) and a second lamp zone (114) is located around the periphery of the wafer (102) for heating the edge of the wafer (102). The chamber (104) includes highly reflective surfaces (106). Light from the first and second lamp zones (108, 114) is reflected off of the highly reflective surfaces (106) at least three time before reaching the wafer (102). Thus, the wafer (102) is isotropically heated and uniform wafer heating is achieved.

Abstract: In one embodiment, the invention is directed to an apparatus for preventing depositions from occurring on a reflector in a processing chamber, comprising: a cover disposed adjacent to the reflector, the cover optically transparent over a range of wavelengths in which the reflector is reflective; and at least one cover support for maintaining the position of the cover relative to the reflector.

Abstract: A kiln, useful for sintering basemetal capacitors comprises an inner zone having vertically oriented gas dispersion conduits for the inlet and radial dispersion of gas and vertically oriented electrical heating elements. Each gas dispersion conduit comprises a porous or perforated inner tube for a porous or perforated outer tube concentrically positioned around the inner tube. The annular space between is filled with a porous refractory medium, such as a bulk ceramic fiber. The temperature of the inner zone is controlled by the electrical heating elements. The gas is evenly heated as it passes radially from the inner tube through the porous refractory medium and then through the outer tube. Surrounding the inner zone is a multiplicity of stacks of substantially horizontally-oriented trays on which the material or articles to be sintered or otherwise treated are placed. The circle of stacks of trays is surrounded by an outer heating zone comprising an outer ring of electrical heating elements.

Abstract: A topless bin for holding and warming food items such as wrapped sandwiches, fries, or breakfast meals, is disclosed herein. The bin includes a base, a base heating element, a pair of side walls and a pair of side heating elements. The base has a horizontal holding surface for supporting the food items being held. The base heating element is thermally coupled to the holding surface such that the food items are warmed thereby. Each side wall has a first portion extending upwardly perpendicular to and at opposite sides of the base, and a second portion extending upwardly at an inclined angle from the first portion. Each side heating element is supported by the second portion of one of the side walls. The inclination is selected to direct heat at an angle from the respective side heating element toward the holding surface such that the food items are also warmed thereby. Thus, the food items are warmed without either an overhead heat source or convected heat from an air stream.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.

Abstract: A heating apparatus for chemical vapor deposition equipment which is capable of providing a uniform temperature distribution, even for a wafer having a large surface area. The heating apparatus may include upper and lower reflection plates, with a heater located between the reflection plates. The apparatus may also include a barrier plate to help provide a uniform heat distribution and to minimize dust generation and metallic pollution on a wafer. The apparatus may also include a heater cover for covering the upper portions of the first reflection plate, the heater and the barrier plate, and the sides thereof. The upper reflection plate, which is installed above the heater cover, may be integrally formed with a gas spraying means.

Abstract: A radiant heating apparatus for reducing the cumulative temperature gradient over a semiconductor workpiece during a low temperature process is comprised of a plurality of reflecting units, wherein each reflecting unit is comprised of a back reflector, a tubular reflector extending from the back reflector towards the workpiece, and a radiant energy source disposed in the tubular reflector in front of the back reflector, wherein a cross section of the tubular reflector is in the shape of a truncated segment of a circle.

Abstract: Cooking speed and efficiency are increased in radiant ovens by reducing the intensity of energy emitted by the oven's radiant energy source that does not deeply penetrate food. Undesired photochemical reactions in the cooked food are also reduced or eliminated. In one embodiment, the radiant energy source includes at least one lamp having a coating that reflects at least some of the radiant energy that does not deeply penetrate food. In another embodiment, a plate that reflects or absorbs at least some of the radiant energy that does not deeply penetrate food is disposed between the radiant energy source and a location within the oven where food to be cooked is placed.

Abstract: A rapid thermal heating apparatus including an infrared camera located outside an evacuable chamber to sense infrared radiation emitted from different regions of a substrate.

Abstract: A lightwave oven that includes an oven cavity housing enclosing a cooking chamber therein, and first and second pluralities of elongated high power lamps. The oven cavity housing includes a top wall with a first non-planar reflecting surface facing the cooking chamber, a bottom wall with a second non-planar reflecting surface facing the cooking chamber, and a sidewall with a third reflecting surface that surrounds and faces the cooking chamber. The sidewall has a cross-section that is either circular, elliptical, or polygonal having at least five planar sides. The first plurality of elongated high power lamps provide radiant energy in the visible, near-visible and infrared ranges of the electromagnetic spectrum and are disposed adjacent to and along the top wall. The second plurality of elongated high power lamps provide radiant energy in the visible, near-visible and infrared ranges of the electromagnetic spectrum and are disposed adjacent to and along the bottom wall.

Abstract: An apparatus for measuring the temperature of a substrate in a thermal processing chamber. The substrate is suspended above a reflector to form a reflecting cavity. A probe of a temperature sensor has an input end positioned to receive radiation from the reflecting cavity and an output end optically coupled to a detector to provide a temperature reading. The temperature sensor is configured to reduce the effect that radiation which has an axis of propagation within an angle of an axis normal to the reflector, e.g., substantially normal radiation from a portion of the substrate adjacent to the input end of the probe, has on the temperature reading.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.

Abstract: An improved processing chamber is provided that withstands numerous high pressure/high temperature processing cycles without heater breakage. The processing chamber contains a high conductivity, a high emissivity and/or a high transmissivity shield positioned in sufficient proximity to a heater to prohibit gas currents such as convection current loops from forming between the shield and the heater. The shield is preferably a thin anodized metal or a sapphire sheet.

Abstract: There are disclosed an opening filling apparatus and a method for manufacturing a semiconductor device by using the same. An opening of a semiconductor device is filled by using the filling apparatus comprising: a chamber having a rotation shaft, a motor, a plurality of plates arranged in a circular form centering at the rotation shaft, and a heater; and injectors for injecting gas. When the opening of a semiconductor device such as a trench or a contact hole is filled, filling material may move down by using the centrifugal force generated by rotating the substrate, to thereby fill the opening completely without a void.

Abstract: The present invention provides a method and system for depositing an oxide layer onto a semiconductor device during fabrication by using a deposition chamber, the method comprising the steps of providing a temperature of less than approximately 450 degrees Celsius in the deposition chamber; allowing the semiconductor wafer to soak up the temperature of less than approximately 450 degrees Celsius for approximately 30 seconds; and depositing a layer of oxide onto a semiconductor wafer, wherein a thickness of the oxide layer is not greater than approximately 200 Angstroms.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. The light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: An apparatus for cooling a quartz halogen lamp is disclosed. Each lamp socket, used for connecting terminals of a quartz halogen lamp to an electrical supply, is mounted to a convector. Heat is conducted away from the terminals to the convector where the heat is then transferred by forced convection to the atmosphere. Alternatively, the convector can be mounted directly to one or more of the terminals. Cooling of the quartz halogen lamp terminals is achieved without passing cooling air directly past the quartz halogen lamp, thereby avoiding problems associated with contamination of the quartz halogen lamp that can lead to premature failure of the quartz halogen lamp.

Abstract: A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.

Abstract: The present invention is directed to an apparatus and process for filtering light in a thermal processing chamber. In particular, the apparatus of the present invention includes a first spectral filter spaced apart from a second spectral filter. The first spectral filter is spaced apart from the second spectral filter so as to define a cooling fluid channel therebetween through which a cooling fluid can be circulated. In order to prevent thermal radiation being emitted by the light source from interfering with the operation of a radiation sensing device contained in the chamber, the first spectral filter absorbs most of the thermal radiation being emitted by the light source at the operating wavelength of the radiation sensing device. The second spectral filter, on the other hand, is substantially transparent to thermal radiation at the operating wavelength of the radiation sensing device.

Abstract: An oven for cooking with light having wavelengths in the visible, near visible, and infra-red spectral ranges uses one or more quartz halogen tungsten lamps or quartz arc bulbs positioned above and below the food item. Uniform cooking of the food item is achieved by positioning the lamps asymmetrically with respect to the midline of the oven and by rotating the food item on a rack during the cooking cycle.

Abstract: A heating assembly for heating semiconductor substrates includes a plurality of heating devices, with each heating device including an energy emitting filament adapted for electrically coupling to an external power supply and housed in a first enclosure. The first enclosure comprises energy transmitting material so that energy generated by the filament will be transmitted through the enclosure. A second enclosure houses the first enclosure, which also comprises energy transmitting material. The second enclosure is coated with a reflective layer and is housed in a third enclosure of transmitting material, which encapsulates the reflective coating so that when the energy emitting filament is energized, the reflective coating is contained in the heating device. A heating assembly includes a frame having a plurality of supports for supporting a plurality of the heating devices.

Abstract: A spinner which distributes a photoresist on a wafer in a semiconductor device fabrication apparatus includes a rotation-plate vacuum chuck which holds a wafer, a driving motor which rotates the chuck and a temperature controller assembly. The temperature controller assembly maintains a temperature distribution along the chuck within a predetermined temperature-distribution range. The temperature controller assembly includes a non-contact thermometer, a non-contact variable heater, and a heat regulator. By controlling the temperature in the chuck, a photoresist layer can be coated on a wafer with more uniform thickness than if the temperature were not controlled.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. For instance, in one embodiment, the light energy sources form a spiral configuration. In an alternative embodiment, the light energy sources appear to be randomly dispersed with respect to each other so that no discernable pattern is present. In a third alternative embodiment of the present invention, the light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Abstract: The "Temperature compensation method for semiconductor wafers in rapid thermal processor using properly designed heat conducting pads as susceptors" is a new temperature compensation concept suitable for rapid thermal processor without uniform temperature distributions. By proper design of heat conducting pads, one can make the semiconductor wafers have uniform temperature distribution in a non-uniform heated rapid thermal processor. This is a very simple and cheap method for solving the temperature non-uniformity problem in the rapid thermal processor.

Abstract: An infrared energy reflecting enamel composition comprises a ground coat of enamel on a substrate and embedded TiO.sub.2 particles in the ground coat of enamel. The infrared reflecting enamel composition has an infrared energy reflectivity value of at least 80%. A method for manufacturing the composition is also disclosed for embedding the TiO.sub.2 in the enamel.

Abstract: A wafer to be heat-treated is placed in a heat treatment chamber defined by a heat treatment vessel, and the wafer is heat-treated by radiant heat radiated by a heat source. A gas is supplied through a gas passage formed along the outer surface of an inner wall of the heat treatment vessel and having a portion extending near the heat source. The gas heated in the portion of the gas passage extending near the heat source by the heat source is blown toward a substantially central portion of the wafer as complementary heating means for increasing the temperature of the central portion of the wafer.

Abstract: A gas distribution showerhead for uniformly distributing gas and undistorted radiant heat in an RTP chamber. A gas passageway exists within the showerhead and is suitable for connection to a source of gas. The gas passageway terminates in a plurality of gas ports on a surface of the showerhead. A plurality of energy passageways exist in the showerhead. The energy passageways are exclusive of both the gas passageway and the gas ports, and terminate on the surface of the showerhead. The energy passageways are preferably openings in the showerhead lined with reflectors, although any material which aids in the transmission of the energy may be used. Preferably a plurality of light sources are provided as the energy sources, and they are positioned to transmit light through the energy passageways and out of the surface of the showerhead.

Abstract: A novel electrically power heater for heating samples to very high temperatures is disclosed. The heater includes a heater base having a plurality of concentric circular rings. Each ring includes a plurality of heat lamps coupled to the heater body. The height of each concentric ring is variable and be set during design to any desirable height. In one embodiment, the height of each of the concentric rings is adjusted so as to form a contiguous upwardly sloping arc from the outermost ring to the innermost ring. In another embodiment, the height of the concentric rings is adjusted so as to form a combination of upwardly and downwardly sloping arcs. In both embodiments, the lower surface of the heater body is shaped to form a reflector. The reflector for each ring consists of two portions, each substantially elliptically shaped so as to greatly reduce back reflections through the filament of the heat lamp.

Abstract: A heat-treatment system comprises a first vessel made of a metal, defining a processing chamber and provided in its side wall with an opening through which a wafer to be heat-treated is carried into and the heat-treated wafer is carried out of the first vessel, a second vessel made of a highly heat-resistant nonmetallic material, disposed in the processing chamber and provided in its side wall with an opening coinciding with the opening of the first vessel. A wafer support device is disposed in the processing chamber and has a wafer support table. A heating device for heating a wafer supported on the wafer support table, a process gas supply unit is disposed opposite to a wafer supported on the wafer support table. An enclosing side wall is extended from the periphery of the process gas supply unit so as to surround a processing space between the process gas supply unit and the wafer support table.

Abstract: A rapid thermal processing (RTP) chamber is disclosed, wherein a transparent plate and a body are sealed with a gas tight seal, and wherein the gas tight seal is activated by inflating an inflatable element.

Abstract: A thin visible and near IR absorbing plate is placed between the radiation source and the object to be processed in a rapid thermal processing system. The object is heated in part by the near IR and far IR radiation from the thin plate, and the material and optically induced heating inhomogeneities are reduced.

Abstract: A heat insulating member is disposed, enclosing a reaction tube, and a heat source is provided through a heat linearing member disposed above the reaction tube and between the reaction tube and the heat insulating member. The reaction tube is made of quartz and has a transparent portion formed in the top thereof and its neighboring thereof, and an opaque portion in the rest part of the reaction tube. In a heat treatment, when heat rays are radiated from the heat source through the heat linearing member, the heat rays pass through the transparent portion of the reaction tube to heat a wafer, but those of the heat rays reflected on the heat insulating member are blocked by the opaque portion of the reaction tube. A heat ray quantity to be passed into the reaction tube can be controlled, whereby high intra-surface temperature uniformity of the wafer can be secured, and as a result high processing yields can be obtained.

Abstract: In a radiant heating apparatus, at least an outer radiant heating unit and an inner radiant heating unit located inside the outer radiant heating unit are disposed. A peripheral portion of an article to be treated is mainly heated by the outer radiant heating unit, while a central portion of the article is mainly heated by the internal radiant heating unit. A partition wall is disposed between the outer and inner radiant heating units. Radiation light emitted by each radiant heating unit is reflected by the partition wall so that the radiation light is separated from that emitted by the other radiant heating unit, whereby an area is defined in which the article is heated by each radiant heating unit. Accordingly, a larger article, particularly a substrate-shaped article, can be heated uniformly.

Abstract: A substrate heating equipment for use in a semiconductor fabricating apparatus includes a heater support frame disposed within a vacuum vessel, opposed panel heaters disposed in a pluri-shelved fashion within the heater support frame, and support means for supporting a substrate to be treated between an adjacent pair of the opposed panel heaters, whereby simultaneous heating of plural substrates to be treated is enabled. By controlling the individual temperature of the panel heaters, it also becomes possible to significantly reduce a tact time and to effect uniform heating of the substrates while the equipment is rendered compact.

Abstract: A secondary measurement of rapid thermal annealer temperature is provided. The secondary measurement allows a primary temperature measuring device to be monitored for proper operation in real time. A rapid thermal annealer system is provided having a heating chamber configured to receive and anneal a silicon wafer. Several halogen light sources are provided for heating the silicon wafer. An optical pyrometer measures temperature of the silicon wafer as it is heated by the halogen lamps. A thin silicon ring is provided with an s-type thermalcouple attached thereto. The silicon ring is positioned so that its inner edge is aligned closely with an outer edge of the silicon wafer. An s-type amplifier is connected to the s-type thermalcouple wherein the combination generates a signal indicative of the ring temperature. The ring temperature is compared against the wafer temperature as a measured by the pyrometer.

Abstract: System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.

Abstract: A grid includes a rectangular rack, a drip plate mounted on the rack, a cooking grid supported on the drip plate, a plurality of halogen lamp tubes transversely arranged in parallel on the rack, a plurality of far-infrared ceramic tubes respectively sleeved onto the halogen lamp tubes and heated to emit far-infrared rays for cooking foods on the cooking grid.

Abstract: An apparatus to extract liquid absorbed in a bowling ball having a surface. The apparatus includes a closed chamber to receive the bowling ball therein. A heating element in the chamber increases the temperature of the ball in order to draw the liquid to the surface of the bowling ball. Liquid on the surface of the bowling ball may thereafter be removed.

Abstract: An infra-red and forced air oven for drying a freshly painted object. The drying oven has a plurality of heating elements, which radiate infra-red energy, disposed about the object to be dried. Each heating element preferably has an annular shell, an electrically conductive coil carried by the shell, and an air passage through the shell through which air is forced by a fan. Electricity is provided to the electrically conductive coil which becomes heated and thereby heats the shell and radiates heat and infra-red energy into the oven. The fan forces air through the air passage of the shell so that heated air flows to the interior of the oven. Thus, the oven provides both radiant energy and forced air to dry an object within the oven.

Abstract: A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.