Abstract: A plurality of filament lamps having filaments arranged within an annular light emitting tube are arranged coaxially within a plane to provide a group of lamps, and a plurality of groups of lamps are arranged in a step-like manner with their centers coinciding with each other to form a lamp unit LU. A lamp chamber having this lamp unit arranged therein is provided with a cooling air inlet port and a cooling air outlet port. An inner surface of a side wall of the lamp chamber is provided with a mirror. A workpiece holding block arranged in a light radiation chamber below the lamp chamber can be rotated.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A heating method for heating an object by making use of a heating apparatus comprising lamps and light transmissive columnar bodies each being positioned in front of and in the light irradiating direction of each of the lamps and having a fore-end constituting a light-receiving face for taking up an irradiated light from the lamp and a rear-end constituting a light-irradiating face for irradiating light; the object being disposed to face the light-irradiating faces of the light transmissive columnar bodies and heated by the irradiation of light transmitted via the light transmissive columnar bodies from the lamps. A distance between the light-irradiating faces of the light transmissive columnar bodies and the object is set to around 0.3L or not less than 0.8L (herein, L is a width of the light-irradiating face).

Abstract: An oven device for final finishing of a food item includes an oven housing defining a heating cavity configured to receive at least one food item to be heated, and an upper heating unit within the oven housing above the heating cavity. The upper heating unit includes a heating element that generates radiant heat directed onto the food item in the heating cavity. The oven housing includes at least one reflective panel for distributing radiant heat within the heating cavity. The upper heating element includes a rapidly-heating, high-intensity heating element capable of being cycled on for final finishing of the food item when the food item is received in the heating cavity, and capable of being cycled off when final finishing is not being performed. The final finishing typically includes browning a top surface of the food item, or melting a topping onto the top surface of the food item.

Abstract: A method is provided for the rapid cooling of a processed semiconductor wafer after a wafer heating by radiation process. The method includes the introduction of a radiation absorbing material element between the processed wafer and highly reflective surfaces—after a wafer heating by radiation process. The highly reflective surfaces reflect and re-direct radiant energy from the processed wafer and its surrounding components back to the processed wafer, impeding its cooling process. The radiation-absorbing material element, once between the processed wafer and the highly reflective surfaces, absorbs radiation from the processed wafer and its surrounding components, expediting their cooling process. Accordingly, significant time is saved for the cooling process, thus improving overall wafer throughput.

Abstract: An oven view window comprising a glass substrate, and having disposed on a major surface thereof, a thermally activated, light-scattering coating which, when at a temperature below the activation temperature of the coating is translucent-to-opaque in appearance, but when at a temperature above the activation temperature of the coating is essentially transparent in appearance. Optionally, an infrared reflective coating and a color suppressing coating may also be deposited, in a variety of configurations, onto the oven view window carrying the thermally activated, light-scattering coating.

Abstract: A method and system for calibrating radiation sensing devices, such as pyrometers, in thermal processing chambers are disclosed. The system includes a reflective device positioned opposite the radiation sensing devices and a calibrating light source which emits light energy onto the reflective device. The system is designed so that each radiation sensing device is exposed to the same intensity of light being reflected off the reflective device, which has a preset value. The radiation sensing devices are then used to measure the amount of light energy being reflected which is then compared to the preset value for making any necessary adjustments.

Abstract: The heat treatment apparatus of the present invention comprises a chamber, a hot plate for supporting and heating a substrate in a chamber, a gas supply mechanism having a single or a plurality of gas blow-out ports and arranged in an upper space above the hot plate in the chamber, for supplying a gas along the substrate so as to cover the substrate placed on the hot plate, and an exhaust mechanism having a single or a plurality of gas converge/exhaust ports which face the gas blow-out ports with the hot plate interposed therebetween, for converging and exhausting the gas blown out from the gas blow-out ports, from the chamber, the gas converge/exhaust ports having an effective exhaustion opening length L2 which is shorter than an effective blow-out opening length L1.

Abstract: The invention relates to a process for heat treatment of two-dimensional objects such as semiconductor wafers, for example in the form of silicon wafers, where the objects are arranged on supports and are conveyed through a heating unit, in particular continuously. To achieve a targeted treatment of a two-dimensional object, in particular of a semiconductor component such as a silicon wafer, on one side only, while at the same time achieving a high throughput with incorporation as necessary into a continuous overall manufacturing process, it is proposed that the objects be arranged in full surface contact with the supports, which cover the objects completely or almost completely on their underside and which in turn comprise quartz glass in particular.

Abstract: A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the cavity, a device for delivering, regulating and extracting process gases from the chamber, a device for transporting at least one workpiece through the chamber in a substantially forward direction, a device for heating at least a section of the chamber, and a device for cooling the at least one workpiece downstream from the heating device. The cavity for the apparatus may also be provided in either a curved or a linear configuration for carrying out the present invention method.

Abstract: A vacuum heating furnace comprises a translucent container for retaining a heated object and a heating light source for heating a heated object retained in the translucent container. The translucent container has on its surface a tapered portion to receive transmitted light totally reflected on the inner surface of the translucent container at an angle smaller than a critical angle.

Abstract: An electric broiler-toaster-oven with the broiling heaters installed above the food to be cooked. In order to direct heat down to the food, it uses a reflector unit which consists of the absorber plate and a series of reflectors. This arrangement increases efficiency and the speed of cooking, and provides for extremely clean operation: no fumes are emitted, very few parts are to be cleaned, and no burnt deposits are created on food.

Abstract: An electric heating element for use in an oven cavity of a cooking appliance includes laterally spaced fore-to-aft extending side leg portions which are interconnected by a frontal portion, with each of the side leg portions having an inwardly directed section, followed by an outwardly directed section which leads to the frontal leg portion through respective arcuate corner portions. The electric heating element preferably constitutes a sheathed, resistance coil type element used to provide enhanced uniform heating of the oven cavity for various cooking functions, particularly baking and toasting operations.

Abstract: A rapid thermal processing apparatus and a method of using such apparatus for the continuous heat treatment of at least one workpiece, which apparatus includes a cavity of generally elongated shape, a process chamber defined by interior walls inside the cavity, a device for delivering, regulating and extracting process gases from the chamber, a device for transporting at least one workpiece through the chamber in a substantially forward direction, a device for heating at least a section of the chamber, and a device for cooling the at least one workpiece downstream from the heating device. The cavity for the apparatus may also be provided in either a curved or a linear configuration for carrying out the present invention method.

Abstract: A robot body (21) is carried into the water chamber (2A) of a condenser (1) and disposed on a tube sheet (4) through which a number of narrow tubes (3) open. Inner nozzles (23) are inserted into narrow tubes (3) from working devices (24) installed on the front ends of four combined-use arms (22A through 22D) to position and fix the robot body (21). And the arm turning motors (25) and arm extending and contracting cylinder devices (26) of the combined-use arms (22A through 22D) are driven to move the robot body (21). Further, a cleaning brush (12) and a flaw detection probe (13) are inserted into a narrow tube (3) from each working device (24) and moved along the narrow tube (3) by cleaning water, whereby cleaning and inspection are performed. With three of the combined-use arms (22A through 22D) fixed to the narrow tubes (3), the inner nozzle (23) is extracted from the narrow tube (3) and the working device is moved to the next narrow tube (3).

Abstract: A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.

Abstract: An epitaxial growth furnace comprising first and second partition walls arranged within a reaction chamber, a first separate space surrounded by the partition walls and the inner wall surface of the reaction chamber, a second separate space partitioned by the partition walls so as to be isolated from the inner wall surface of the reaction chamber, a holding mechanism adapted to hold a pair of semiconductor wafers respectively on the first and second partition walls so that the principal surfaces of the pair of wafers face each other with spacing therebetween and are also exposed to the second separate space, and a pair of heaters for respectively irradiating radiant heat to the back surfaces of the two wafers.

Abstract: A method is provided for the rapid cooling of a processed semiconductor wafer after a wafer heating by radiation process. The method includes the introduction of a radiation absorbing material element between the processed wafer and highly reflective surfaces—after a wafer heating by radiation process. The highly reflective surfaces reflect and re-direct radiant energy from the processed wafer and its surrounding components back to the processed wafer, impeding its cooling process. The radiation-absorbing material element, once between the processed wafer and the highly reflective surfaces, absorbs radiation from the processed wafer and its surrounding components, expediting their cooling process. Accordingly, significant time is saved for the cooling process, thus improving overall wafer throughput.

Abstract: A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.

Abstract: A lamp system with a very soft high-intensity output is provided over a large area by water cooling a long-arc lamp inside a diffuse reflector of polytetrafluorethylene (PTFE) and titanium dioxide (TiO2) white pigment. The water is kept clean and pure by a one micron particulate filter and an activated charcoal/ultraviolet irradiation system that circulates and de-ionizes and biologically sterilizes the coolant water at all times, even when the long-arc lamp is off.

Abstract: In a heat processing method for heating a wafer mounted on a base inside a process container to 120° C. with a heat generator buried inside the base, a gas pre-heated to 120° C. by a heater passes through the space above the wafer after being rectified so as to be parallel to the wafer by a rectifying board disposed near a supply vent. Thereby, temperature distribution in the space above the substrate is kept uniform during heat processing.

Abstract: A system for heating a plurality of semiconductor wafers at the same time is disclosed. the apparatus includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.

Abstract: A Bernoulli wand type semiconductor wafer pickup device that is adapted to regulate the temperature of a wafer while the wafer is being repositioned within a semiconductor processing system. In one embodiment, the device is comprised of a resistive heating element that is adapted to raise the temperature of the pickup device. In particular, by raising the temperature of the pickup device, a portion of the thermal radiation emitted from the device is absorbed by the wafer, thus providing a means for regulating the wafer temperature. In another embodiment, the device is adapted with the characteristics of a black body absorber so as to enable the device to optimally absorb thermal radiation from external radiant sources, thereby providing a means for increasing the temperature of the device. In another embodiment, the device is coated with reflective material that enables a large portion of thermal radiation emitted from the wafer to be reflected and absorbed back into the wafer.

Abstract: A rapid roasting oven with movable heating elements comprises a housing, a timer, a reflecting plate and at least one heating element mounted on the reflecting plate, wherein a travel mechanism is set in the housing, and the reflecting plate is coupled with the travel mechanism and moves up and down vertically along with the housing.

Abstract: A removable rack for supporting a reflector in an oven having a light source where the reflector focuses light emitted from the light source in a predetermined manner. The preferred removable rack is arranged and configured to support a mirror array therein where the entire rack can be removably fixed to the interior of the oven in which it will be used. The rack is preferably arranged and configured to releasably engage the mirror array therein. A method for replacing a reflector disposed in the internal portion of an oven having a light source comprising the steps of providing a removable support rack for releasably supporting the reflector removably fixed to an interior portion of an oven. A reflector can be replaced by removing a member, fixing the removable support rack to the interior portion of the oven and removing the removable support rack from the interior of the oven.

Abstract: A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

Abstract: An oven capable of operating in the temperature range between 2500 F. and 4500 F. The heating element of the oven has at least one halogen lamp and the interior lining of the oven is rebonded fused silica foam.

Abstract: A temperature probe has a light conductor for optically transmitting temperature information to a pyrometer. The light conductor has a first portion which is adapted to capture temperature information and a second portion which is connected to the pyrometer. The probe also has an enclosure for protecting the second portion of the light conductor. The enclosure in turn has a passageway for housing the second portion of the light conductor and an opening for projecting the first portion of the light conductor from the passageway to the outside of the enclosure. Additionally, a seal is provided in the passageway adjacent the opening to encapsulate the second portion of the light conductor inside the passageway.

Abstract: A semiconductor processing apparatus and process is disclosed which is capable of degassing a semiconductor substrate and also orienting the substrate in the same vacuum chamber. The apparatus includes an electrostatic clamping structure for retaining the entire undersurface of a semiconductor substrate in thermal communication therewith in the vacuum chamber, a heater located within the electrostatic clamping structure for heating the electrostatically clamped substrate to degas it, a rotation mechanism for imparting rotation to the substrate in the vacuum chamber, and a detector for detecting the rotational alignment of the substrate in response to the rotation of the substrate. In a preferred embodiment, the substrate is rotated to rotationally align it as it is being heated to degas it.

Abstract: System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.

Abstract: An injector system for a vertical furnace which has a pedestal and a semiconductor article support within a process container. The injector system includes an injector which is an elongate tube extending into the process chamber. The tube includes a circuitous section in the area of the pedestal to increase residence time for the contents of the tube prior to introduction to the semiconductor articles. A substantially direct section leads from the circuitous section to a discharge end located above the semiconductor article support. The injector system further includes a vertical column heater arranged with the vapor outlet at the upper end of the heater connected via a coupling to the injector in an arrangement to reduce thermal loss.

Abstract: A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

Abstract: A susceptor in a semiconductor wafer heat treatment apparatus holds a wafer such that the wafer is made flat at a heat treatment temperature. In particular, the susceptor is constituted by an elastic platy member which is convex upward with respect to the direction of the gravity. Therefore, when the wafer is subjected to a high-temperature heat treatment, a crystal defect in the wafer can be suppressed.

Abstract: An apparatus for thermally processing a semiconductor wafer includes a susceptor to support the wafer, a heater arrangement to differentially heat the wafer and provide a temperature distribution on said wafer, a radiation thermometer for measuring the temperature distribution, and means for controlling and varying the temperature distribution. The heater arrangement particularly includes a first heater to heat an edge of the wafer, around a second heater to heat a center area of the wafer. With this apparatus, the rate of change of the temperature and the temperature distribution of the wafer can be controlled within tolerable limits to avoid slip line generation. Also, the relative stress state of the wafer edge and the wafer center can be influenced by differential heating of the edge and the center.

Abstract: A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.

Abstract: An apparatus for measuring the temperature of a substrate in a thermal processing chamber is disclosed. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The apparatus includes a first polarizer positioned to polarize radiation reflected by the reflector, a probe having an input end positioned to receive reflected and non-reflected radiation from the reflecting cavity, a polarizing system optically coupled to an output end of the probe, and a detector apparatus optically coupled to the polarizing system. The polarizing system is configured to generate a first beam and a second beam, and it includes a second polarizer oriented such that a ratio of reflected radiation to non-reflected radiation is higher in the first beam than the second beam. The detector apparatus generates a first intensity signal from the first beam and a second intensity signal from the second beam.

Abstract: In a RTP (rapid Thermal Processing) of a large-diameter semiconductor wafer using a hot-wall type heating furnace, the temperature distribution of the wafer surface is made uniform by means of preliminarily heating a thermal storage plate(s) to a heat-treating temperature, and, then positioning the wafer between a pair of the thermal storage plates or in the direct proximity of a thermal storage plate. The wafer may be brought into contact with the thermal storage plate. The wafer is thus heated rapidly heated to the heat treating temperature.

Abstract: Heating apparatus particularly useful for rapid thermal processing of semiconductor wafers, includes: a head having a reflector and a support for supporting a wafer spaced above the reflector; a radiation heater located above the wafer, an optical fiber having one end exposed to the space between the wafer and the reflector for detecting the radiation emitted by the wafer as enhanced by the reflector; a heat measuring device at the opposite end of the optical fiber for producing a temperature measurement corresponding to the radiation emitted by the wafer as enhanced by the reflector; and a peripheral barrier circumscribing the head, reflector, and the wafer for blocking stray radiation from entering the space between the wafer and the reflector from the outer periphery of the head.

Abstract: A baking oven comprises a hearth with a baking chamber and a heating device having heating elements which comprise at least one heating surface that constitutes a wall of the baking chamber. Provided in the heating elements is a heating gas duct which is defined on one side towards the baking chamber by the heating surface. Along part of the heating gas duct, turbulence elements are provided in the direction of flow of the heating gas, for the generation of turbulences in the heating gas.

Abstract: A dual surfaced mid-reflector employs two independently shaped faceted faces to direct radiant energy from separate heater lamp arrays to a substrate or substrate support to be heated. A dual surfaced mid-reflector can also be employed in conjunction with a peripheral cylindical reflect or and a central cylindrical reflector to further direct radiation to specific regions on a substrate or substrate support. In addition, a dual surfaced mid-reflector can also be employed in conjunction with heater lamps where the radiation of individual lamps is further directed by focusing reflectors or dispersive reflectors.

Abstract: The invention provides a grill configuration which enables a 2400 Watt or smaller electric heating element to provide cooking temperatures of at least 500.degree. F. when food is present on a grill area of at least 200 square inches. The electric grill includes an electric heating element and a multilayer metal sheet insert shaped to reflect radiation heat from the heating element to impinge on the food present on the grill surface. The multilayer metal sheet insert is preferably metal foil layers which provide maximum insulation and heat containment to increase the efficiency of the limited heat available from the electric heating element of the grill.

Abstract: A showerhead for introducing gas from one or more external supplies into a substrate processing chamber, the showerhead including a faceplate including a plurality of gas injection ports through which gas is injected into the chamber, wherein the plurality of gas injection ports includes a first subset of gas injection ports and a second subset of gas injection ports; a first gas distribution system which during use delivers a first gas to the first subset of injection ports for injection into the chamber; and a second gas distribution system which during use delivers a second gas to the second subset of injection ports for injection into the chamber.

Abstract: A heat processing device includes a hot plate on which a substrate is placed, a heater press-fitted in the hot plate for heating the substrate through the hot plate, and a reflecting plate facing an underside and side faces of the hot plate at a distance therefrom for reflecting heat radiated from the hot plate. An outside frame is arranged on the surface of the hot plate so as to surround the substrate.

Abstract: A method and apparatus are described for increasing the temperature uniformity of a wafer heated in a rapid thermal process (RTP) while the wafer is supported by a high emissivity structure in spaced relation above the head during the heating of the wafer; characterized in that a high-reflectivity ring, highly reflective to the radiation of the wafer, is provided on the head underlying the high emissivity ring.

Abstract: An oven muffle has mutually spaced apart inner and outer insulating walls. An insulation layer composed of particulate material is disposed in an interstice between the inner and the outer insulating walls. At least one of the insulating walls is pretensioned toward the respective other insulating wall in order to exert a permanent pressure on the insulation layer.

Abstract: A heating light source for a heat treatment device of the light irradiation type with high temperature uniformity on the wafer surface during heating and a small operating current and a lamp which is used for the heating light source. By using a light source in which several annular lamps are arranged concentrically within the same plane the need for a large device due to large currents is obviated. By arranging nonemission parts distributed over the entire peripheral direction of an annular filament lamp and not only on one side, and by arranging these filament light sources in the radial direction of a lamp in which several of these light sources are used distributed and not on one side, the irradiance on the entire wafer surface is made essentially uniform.

Abstract: A single-substrate-heat-treatment apparatus heats a semiconductor wafer by scanning the wafer with light having high energy density. Light emitted by a light source is reflected by a reflection mirror mechanism, and is then focused on the surface of the wafer on a work table via a transparent window of a process chamber. During heat treatment, the work table or reflection mirror mechanism is moved to scan the wafer surface with the light coming from the light source.

Abstract: A rapid thermal heating system which includes a plurality of radiant energy sources to irradiate a predetermined area of a substrate. The radiant energy sources are associated with reflectors wherein portions of radiated areas of adjacent radiant energy sources overlap. The reflectors include a flared specular surface at their light emitting end or outlet. The flared specular surface reflects radiant energy toward the substrate.

Abstract: A thermal processor for at least one semiconductor wafer includes a reactor chamber having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.

Abstract: An oven using one or more quartz tungsten light bulbs capable of producing 1.5 kW of radiant energy of which a significant portion is light energy in the 0.4 to 0.7 .mu.m wavelength range impinges high intensity visible light wave radiation directly onto a food item. Light sources can be positioned above and below the food item and the inner walls of the oven are preferably highly reflective to reflect light energy onto the food. The intensity of the visible light source is automatically controllable and can be varied throughout the cooking cycle.