Abstract: The present invention provides a heating assembly that includes a thermally conductive, lamp-mounting block manufactured from aluminum or a similar material, which can be machined as a single-piece (e.g., unibody) block. The unibody block includes one or more networks of inner passageways bored or otherwise machined within the block for transporting one or more cooling fluids. The mounting block can also have a reflective coating on one or more of its surfaces that face the lamps to efficiently reflect heat and/or light generated by the lamps onto a desired surface, for example, a semiconductor wafer. Thermal isolation devices, e.g., pads, provide for both physical mounting of the heating lamps to the mounting block and also provide thermal isolation between the heating lamp and its electrical connections are also disclosed to protecting heat-sensitive elements of the heating assembly such as seals.

Abstract: An apparatus for rapid thermal processing is described and includes a cylindrical lamp array structure (13) surrounding a cylindrical process tube (16). The cylindrical process tube (16) has a lengthwise central axis (22). The cylindrical lamp array structure (13) includes heat sources or lamps (26). The lamps (26) are positioned with respect to the cylindrical process tube (16) so that the sides of the lamps (26) focus light energy in the direction of the lengthwise central axis (22). Substrates (12) are oriented within the cylindrical process tube (16) so that the major surfaces (14) of the substrates (12) are substantially normal to the lengthwise central axis (22). In an alternative embodiment, a magnetic field source (19) is included for processing storage devices such as non-volatile memory devices.

Abstract: A heat treatment apparatus includes a vertically disposed process tube defining a reaction chamber therein; a main heater for heating the reaction chamber, the main heater being disposed outside of the process tube; a boat for holding a plurality of wafers, the boat being loaded into and unloaded from the reaction chamber; and a boat rotating device for rotating the boat. The boat rotating device is provided with a rotatable hollow shaft assembly and a fixed shaft coaxially disposed inside the rotatable hollow shaft assembly. A sub-heater is attached to an upper end of the fixed shaft, and the boat and an insulating portion are disposed on the rotatable hollow shaft assembly.

Abstract: A thermal device with a container having a surface exposed to the substrate, wherein the container further has a heat source and a plurality of thermal shields situated between the surface exposed to the substrate and the heat source. The thermal shields are spaced from one another by a predetermined distance defining one or more gaps therebetween, wherein the predetermined distance is associated with a mean free path of a gas residing therein. Alternatively, the predetermined distance is variable. A pressure of a gas residing within the one or more gaps is controlled, wherein the pressure of the gas switches the thermal conductivity of the gas between generally conductive and generally non-conductive.

Abstract: In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.

Abstract: A system for heating a plurality of semiconductor wafers at the same time is disclosed. the apparatus includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.

Abstract: A heating and cooling apparatus is provided which employs a series of thermally conductive plates thermally coupled to heating and cooling devices to heat or cool a mounting plate loaded with semiconductor devices. The mounting plate is assembled on a heating plate, which is then assembled on a cooling plate. The heating plate includes upper and lower plates with a heater therebetween which can heat the heating plate to a desired temperature, which in turn heats the mounting plate and the semiconductor devices. The cooling plate has ‘S’ shaped flow grooves formed throughout. When cooling fluid is flowed through the flow grooves, the cooling plate is cooled, which cools the heating plate, which in turn cools the mounting plate and the semiconductor devices.

Abstract: A semiconductor processing apparatus having a processing chamber defined by a plurality of walls and a substrate support to support a substrate within the processing chamber.

Abstract: This invention is a thermal management method for efficient, rapid, controllable and uniform thermal management over a wide temperature range. The method integrates a thermal source, thermal sink and a thermal diffuser. According to the invention, a thermal diffuser is positioned stationary relative to the wafer surface and coupled to a thermal source and a thermal sink, which are also stationary relative to the wafer surface. The thermal sink comprises a heat-carrying media with a controllable temperature. The wafer is heated from a first processing temperature to a second processing temperature during a heating time interval and then cooled to the first processing temperature from the second processing temperature during a cooling time interval. During heating and cooling, the wafer is constantly held in a fixed position. Zonal control of the thermal source and non-uniform flow of the thermal sink enable sensitive mitigation of thermal non-uniformity on a heating surface.

Abstract: The present invention relates to an apparatus for toasting of bread etc. comprising a housing (2) with a slot (3) which issues into a toasting space (4) into which products to be toasted can be introduced, while heater elements (5) are arranged on both sides of this space (4) which each cooperate with a reflector (7) for reflecting radiation in the direction of the toasting space (4), and the housing (2) is made at least partly of a transparent material. In order to obtain an evenly distributed browning and a good view of the products in the toasting space (4), the reflectors (7) cover the whole area of the toasting space (4) and are made of a transparent material.

Abstract: A process for annealing large-area multilayer bodies by supplying a quantity of energy at an annealing rate of at least 1° C./s. To suppress temperature inhomogeneities during the annealing, different partial quantities of the quantity of energy are supplied to the layers of the multilayer body with a local and temporal resolution. The multilayer body is annealed in a container which has a base and a cover made from glass-ceramic. The process is used to produce a thin-film solar module.

Abstract: A heating device of the light irradiation type in which uniform illuminance can be obtained without placing a single end lamp in the middle of the light source part is achieved providing a light source part in which circular lamps are arranged concentrically to one another with a mirror in the center of the circular lamps. The mirror is convex toward the workpiece and reflects the light emitted from the innermost circular lamp located closest to the center area so that, without placing a single end lamp in the middle area, the reduction of illuminance in the middle area of the irradiated surface is reduced. Furthermore, the reflector can be made conical, and in this way, the light from the lamps can be emitted with high efficiency onto the workpiece surface.

Abstract: The present invention relates to a process for ceramising glass ceramics (so-called green glass). The process according to the present invention comprises the following procedural steps: green glass (3) is manufactured; the green glass is placed in a suspended state on a levitation substrate by supply of levitation gas; the green glass is heated in the suspended state by IR radiation until such time as the desired ceramising has set in.

Abstract: In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures include associated reflectors to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). The lamps with such enclosures are mounted for rotation so that the reflectors may alternately shield all or a portion of emitted lamp radiation from the semiconductor substrate.

Abstract: A method and for heat-treating at least one material being processed (3) under a specific process-gas atmosphere (111) of at least one process gas (4) with the aid of a heat-treatment unit (6). The heat-treatment unit has at least one energy source (5) for making the material being processed (3) take up an amount of energy, a heat-treatment container (11) with a heat-treatment space (16) for keeping the material being processed (3) under the process-gas atmosphere (111) during the heat treatment, a heat-treatment chamber (13), in which the heat-treatment container (11) is arranged at a distance (18) from the heat-treatment chamber (13), so that there is an intermediate space (14) between the heat-treatment container (11) and the heat-treatment chamber (13), and an element (19, 191) for producing in the intermediate space (14) a further gas atmosphere (141) of a further gas, different from the process-gas atmosphere (111).

Abstract: A substrate to be processed in a high temperature processing chamber is preheated to avoid the problems associated with thermal shock when the substrate is dropped onto a heated susceptor. Preheating is effected by holding the substrate over a susceptor maintained at or near the processing temperature until the temperature of the substrate approaches the processing temperature. Thus, wafer warping and breakage are greatly reduced, and wafer throughput is improved because of time saved in maintaining the susceptor at constant temperature without cool down and reheat periods.

Abstract: With reference to a device for heating a meltable material, such as plastic, upstream from equipment for further processing, such as casting or extrusion equipment, which device includes a conveyor channel for the material and a heating means located outside the conveyor channel, the heating means being designed as a radiant heating means and the thermal radiation being directed onto the conveyor channel, the invention proposes that the conveyor channel consist of a material which completely or partially absorbs the thermal radiation.

Abstract: The present invention is for a method for heating of blanks and other heating of metallic materials in a furnace before working where heat is transferred to a blank in the furnace by radiation. According to the method of the invention an important part of the radiation hits the walls of the furnace and are reflected there before it is transferred to the blank. Preferably the furnace is designed so that head radiation is reflected also at the bottom of the furnace. At least 50% of the radiation which reaches the blank ought to be reflected radiation. The invention is also for a furnace for heating of blanks and other comprising at least one furnace bottom part (1) and at least one furnace top part (4) having side walls (5, 6, 7, 8) where at least parts of the side walls of the top parts are inclined so that opposite walls are inclined towards each other.

Abstract: A substrate processing apparatus includes a processing chamber which processes a substrate; a substrate supporting body which supports the substrate in the processing chamber; a heating member which heats the substrate and which is disposed on an opposite side from the substrate with respect to the substrate supporting body; a substrate temperature detecting device provided at a position opposed to a surface of the substrate; and a light-shielding member which shields stray light from the heating member and which is disposed around the substrate, wherein the light-shielding member has quartz members and an opaque member sandwiched between the quartz members.

Abstract: A radiant heating apparatus for heating one or more workpieces, comprises at least one flash discharge lamp, a discharge circuit having a condenser, connected in series to the at least one flash discharge lamp, for supplying voltage to the at least one flash discharge lamp; and a non-contact current detecting sensor provided in the discharge circuit wherein the current detecting sensor detects in a non-contact state discharge current flowing through the discharge circuit whereby it is possible to compensate condenser deterioration and also it is possible to detect an abnormal state of the discharge circuit based on outputs from the non-contact current detecting sensor.

Abstract: The present invention provides a heating assembly that includes a thermally conductive, lamp-mounting block manufactured from aluminum or a similar material, which can be machined as a single-piece (e.g., unibody) block. The unibody block includes one or more networks of inner passageways bored or otherwise machined within the block for transporting one or more cooling fluids. The mounting block can also have a reflective coating on one or more of its surfaces that face the lamps to efficiently reflect heat and/or light generated by the lamps onto a desired surface, for example, a semiconductor wafer. Thermal isolation devices, e.g., pads, provide for both physical mounting of the heating lamps to the mounting block and also provide thermal isolation between the heating lamp and its electrical connections are also disclosed to protecting heat-sensitive elements of the heating assembly such as seals.

Abstract: Pre-heating apparatus for pre-heating a selected portion of each of a series of preforms to achieve a persistent thermal gradient prior to re-heating and blow-molding the preform. The pre-heating apparatus is adjustably mounted to a gravitational slide that transports the series of preforms downward under the influence of gravity through the preheating apparatus toward a reheat blow molding machine. The pre-heating apparatus includes a housing coupled to the slide so that the selected portion of each of the series of preforms is shielded from the general environment, and heating elements fixed within the housing so that heat from the heating elements is directed toward the selected portion of each of the series of preforms as the preforms descend down the gravitational slide.

Abstract: This toaster consists of a casing (1) that is essentially parallelepiped in shape and thermally insulated, and at least one electrical resistor (6) which constitutes a radiant heating element and is enclosed in the casing. The side walls (3, 4) of the casing (1) are transparent.

Abstract: A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.

Abstract: In the method for coating substrates the substrates are placed in recesses in a glass-ceramic plate or plates arranged over infrared high-temperature radiators with the surfaces to be coated on the radiators. The substrates are heated from below to the process temperature required for the coating. Subsequently the substrates are removed from the heating device, introduced into a coating chamber and coated. The preheating device for the substrates has two glass-ceramic plates that are placed loosely on top of each other and infrared high-temperature radiators. Substrate receptacles are provided in the glass-ceramic plates by approximately coincident recesses of different size in the plates so that the substrates can be held in close proximately to the radiators during the preheating.

Abstract: A controller controls the temperature of a hot plate and the degree of vacuum in a tightly closed space to a temperature and a pressure at levels at which a thinner contained in a resist applied to a wafer volatilizes and an acid generator, a quencher, and a polymer chain protecting group practically remain in the resist, for example, during heat processing. More specifically, the controller controls the temperature of the hot plate and the degree of vacuum in the tightly closed space to bring the temperature of the hot plate to about 40° C., and the degree of vacuum in the tightly closed space to approximately 5 Torr. Thereby, the heat processing can be performed for the wafer so that the acid generator is uniformly dispersed in the resist, or the quencher is uniformly formed on the front face of the resist without breakage of the polymer chain protecting group.

Abstract: A lightwave oven includes a cooking chamber, at least one wall having a translucent region, at least one duct separated from the chamber by the wall, the duct having at least one inlet opening supplying cooling air therein and at least one outlet opening discharging the cooling air, at least one lightwave heating device heating food in the chamber, the heating device having at least one rod-shaped radiant lamp producing lightwaves, the radiant lamp being disposed within the duct and having a longitudinal extent, and at least one reflector surface for reflecting the lightwaves produced by the radiant lamp into the chamber, and the inlet opening and the outlet opening being disposed to direct the cooling air in the duct to flow substantially at right angles to the longitudinal extent of the radiant lamp.

Abstract: A lightwave oven includes a cooking chamber and at least one lightwave heating device that can be moved to and fro on a travel path between a first position and a second position. To distribute the lightwave energy emitted by the lightwave heating device as uniformly as possible in the entire lightwave oven, the lamp reflector is pivotally disposed in the lightwave oven, which achieves an improvement in the browning of edges of food to be cooked.

Abstract: The aim of the invention is to provide an economical and homogenous thermal treatment for substrate. To this end, the inventive device and method for thermally treating substrates, especially semiconductor wafers, comprise at least one heating device for heating at least one substrate by electromagnetic radiation. Said heating device comprises at least two arc lamps, the radiation characteristics for each arc lamp being controlled individually, and the electromagnetic radiation of the arc lamps contributing essentially to the power density of the electromagnetic radiation of the heating device.

Abstract: The chamber has a lenticular cross-section with a horizontal support plate extending between sides of the chamber. A rectangular aperture is formed in the support plate for positioning a rotatable susceptor. A temperature compensation ring surrounds the susceptor and is supported by fingers connected to the support plate. The ring may be circular or may conform to the shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A sacrificial quartz plate may be provided between the circular ring and the rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into an upper region and purge gas into a lower region.

Abstract: A thermal processing apparatus, performing processing accompanied with heating on a substrate, having an upper lamp group directed toward a prescribed direction and a lower lamp group perpendicularly intersecting with the upper lamp group is provided with a lower reflector between the upper and lower lamp groups. The lower reflector is so provided as to reflect light from lamps, included in the lower lamp group, present on both end regions in relation to the direction of arrangement. Thus, the thermal processing apparatus can efficiently irradiate an auxiliary ring with reflected light from the lower lamp group and improve temperature uniformity when heating the substrate.

Abstract: A lightwave oven having a cooking chamber and at least one lightwave heating device for heating food in the cooking chamber, and at least one reflector for reflecting the lightwaves produced by the lightwave heating device in the direction of the food and improve thorough cooking and browning of the food. In addition to the radiant lamps of high color temperature, separate radiant lamps of low color temperature are provided to also improve browning of the food. In each case, two radiant lamps of different color temperature can be fixed to a common holder, the holder being held on a movement device such that it can be pivoted, and the radiant lamps radiating light in different directions.

Abstract: A lightwave oven includes a lightwave heating device having at least one radiant lamp and at least one reflector having a reflective surface whose geometric shape is formed by a generatrix. Improved thorough cooking and browning of food in the oven is achieved by using a common radiant lamp both for browning and for cooking, its reflector having a reflective surface produced from a generatrix having a curve lying between an elliptical and a parabolic curve, whose vertices lie at a common first point and whose focal points lie at a common second point.

Abstract: In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may include associated reflectors and/or lenses to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). Thin planar quartz liners may also be interposed between the lamps and the substrate. By controlling radiant energy distribution within the chamber, and eliminating thick planar quartz windows commonly used to isolate the lamps in prior art RTP systems, higher processing rates and improved reliability are obtained.

Abstract: Embodiments of the invention generally provides an apparatus and method for heating substrates, comprising a heater disposed within a chamber, a plurality of heated supports movably disposed within the chamber to support at least two substrates thereon and a contamination collector disposed in communication with the chamber.

Abstract: Methods and systems for heat-treating a workpiece are disclosed. A first method involves increasing a temperature of the workpiece over a first time period to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, the heating commencing within less time following the first time period than the first time period. A second method involves pre-heating the workpiece from an initial temperature to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature by an amount less than or equal to about one-fifth of a difference between the intermediate and initial temperatures. A third method involves irradiating a first side of the workpiece to pre-heat the workpiece to an intermediate temperature, and irradiating a second side of the workpiece to heat the second side to a desired temperature greater than the intermediate temperature.

Abstract: The present invention is for a method for heating of blanks and other heating of metallic materials in a furnace before working where heat is transferred to a blank in the furnace by radiation. According to the method of the invention an important part of the radiation hits the walls of the furnace and are reflected there before it is transferred to the blank. Preferably the furnace is designed so that heat radiation is reflected also at the bottom of the furnace. At least 50% of the radiation which reaches the blank ought to be reflected radiation. The invention is also for a furnace for beating of blanks and other comprising at least one furnace bottom part (1) and at least one furnace top part (4) having side walls (5, 6, 7, 8) where at least parts of the side walls of the top parts are inclined so that opposite walls are inclined towards each other.

Abstract: A baking unit of the present invention comprises: a hot plate on which the substrate is placed; a casing; a gas supply tubes; a baffle ring which surrounds the wafer and is provided with a plurality of gas blowing apertures; and a rotation motor. An inert gas is supplied to the wafer from the plurality of blowing apertures which is moved by rotation or turn round of the baffle by using the rotation motor.

Abstract: A radiant heating apparatus for heating one or more workpieces, comprises at least one flash discharge lamp, a discharge circuit having a condenser, connected in series to the at least one flash discharge lamp, for supplying voltage to the at least one flash discharge lamp; and a non-contact current detecting sensor provided in the discharge circuit wherein the current detecting sensor detects in a non-contact state discharge current flowing through the discharge circuit whereby it is possible to compensate condenser deterioration and also it is possible to detect an abnormal state of the discharge circuit based on outputs from the non-contact current detecting sensor.

Abstract: A toaster structure comprises a rear plate, a rear door, and a safety switch. The rear plate has an opening at center portion with a pair of rails formed at respective sides of the opening, and a step below the lower end of the opening. The rear door comprises a pair of edges at respective sides, which align with the rails of the rear plate and will guide the rear door to slide along the rails up and down, whereas the step will receive the rear door and confine further movement. The safety switch is formed on the rear plate in align with one side of the step, and will be pressed by the rear door when the door is closed.

Abstract: To enable uniform heating of the wafer and to carry out heating of the guard ring with high efficiency using lamps of a light source part formed of wafer heating lamps and guard ring heating lamps, the distance between the guard ring heating lamps and the guard ring is made larger than the distance between the wafer heating lamps and the wafer. A side wall is formed with a mirror surface is located between the lamps for wafer heating and the lamps for heating the guard ring by which the light which was emitted from the guard ring heating lamps in the direction toward the wafer are reflected toward the guard ring. Furthermore, at the outer periphery of the guard ring heating lamps, a second side wall is formed which is used as a reflection surface. In addition, at the outer periphery of the guard ring, there is a second mirror by which the light emitted outward of the guard ring is focused back onto the guard ring.

Abstract: A thermal processing apparatus capable of rapidly increasing and decreasing a temperature of a target object in a process chamber being thermally treated. A heat source heats the target object and a cooling arrangement including a bottom part of the process chamber cools the object. A gas having high thermal conductivity is introduced into the chamber to promote heat transfer. A moving mechanism relatively moves the object with respect to the cooling arrangement.

Abstract: An apparatus for heat treating semiconductor wafers in a thermal processing chamber using light energy is provided. In one embodiment, the apparatus contains a window located between the semiconductor wafer and the energy source. The window contains a member that defines at least one passage capable of being placed into communication with a coolant to cool the window and at least partially offset the “first wafer effect”. Additionally, in some embodiments, the window has a thickness greater than about 1 inch so that it can withstand pressures applied during wafer processing.

Abstract: There is described a semiconductor manufacturing apparatus for coating the surface of a semiconductor wafer with an organic coating, such as anti-reflective coating, which shortens a down time required in association with removal of compounds that tend to sublime and enables simplification of removal of the compounds and an increase in safety of the removal operation. A top plate of a hot plate unit for heating a semiconductor wafer is formed from light-transmissive material such as quartz. A light source unit for illuminating UV-rays effective for decomposing organic compounds is disposed on the top plate. The hot plate unit bakes the semiconductor wafer coated with the organic material, and compounds that have a tendency to sublime including organic material adhere to the lower surface of the top plate in association with the baking operation.

Abstract: The invention relates to a device for melting and conveying material such as plastic or metal. Said device comprises a conveying channel, which contains an admission opening for the material as well as a discharge opening for the at least partially melted material. The device also comprises heating devices that, between the admission opening and discharge opening, heat the conveying channel and/or the material, and comprises a slide that can move to-and-fro while conveying the material from the admission opening to the discharge opening. According to the invention, the conveying channel is provided with a tubular shape and with two walls and has an inner tube and an outer tube. The slide is provided as a sliding sleeve, which is placed between the inner tube and the outer tube, and is provided in two pieces. In addition, said slide comprises a closing sleeve for opening or closing the conveying channel and comprises a conveying sleeve that can be moved independent of the closing sleeve.

Abstract: Disclosed is an apparatus that suppresses changes in a temperature distribution in a wafer caused by changes in the light transmittance of a process tube of a lamp annealing furnace. A transmission type sensor including a light emitting section and a light receiving section is arranged so that a process tube is sandwiched between the light emitting section and the light receiving section. The transmission type sensor measures the light transmittance of the process tube, so that it becomes possible to determine when the process tube needs changing. Also, by using a plurality of transmission type sensors and performing feedback control of power of lamps according to measurement results of the transmission type sensors, it becomes possible to suppress changes in the temperature distribution in a wafer.

Abstract: An apparatus for fixing the position of a quartz furnace tube in a semiconductor processing furnace is described. The furnace is of the type that has a cylindrical body possessing an open end through which the tube may be withdrawn, and a base postioned on the open end, wherein the tube includes a flange portion secured to the base through which gas may be withdrawn from or introduced into the furnace tube. The tube is coaxially disposed within the furnace body. The apparatus may include two clamp halves each has a half-circular shape for engaging the flange portion of the furnace tube onto the base, and a mounting means for mounting the two clamp halves to the base.

Abstract: A heat treatment apparatus applies an accurate heat treatment to a wafer by performing an accurate measurement of a temperature of a wafer by a radiation thermometer. Halogen lamps heat the wafer by irradiating a light on a front surface of the wafer. A guard ring supports the wafer so that the front surface of the wafer faces the halogen lamps. A gap is formed between the guard ring and a back surface of the wafer. The radiation thermometer detects a light radiated from the backside of the wafer by a quartz rod facing the backside of the substrate. The wafer placed on the guard ring defines a first space on the front surface side of the wafer and a second space on the back surface side of the wafer.

Abstract: A method for protecting at least one wafer from contamination, the method including the steps of heating the wafer in an apparatus for semiconductor processing having a reaction core (102), providing a first voltage level to a wafer transfer device (108), and providing a second voltage level lower than the first voltage level, near the reaction core (102), thereby activating the protection.

Abstract: An apparatus for supporting a glass substrate is provided. In one embodiment, a substrate support is provided having a base structural member and an upper top portion having a surface thereon adapted to minimize friction and/or chemical reactions between the substrate support and a glass substrate supported thereon. The substrate supports may be utilized in various chambers such as load locks chamber and chambers having thermal processes.