Abstract: Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.

Abstract: A heat treatment apparatus and a substrate processing apparatus having the heat treatment apparatus incorporated therein are provided. Nitrogen gas flowing through a gas inlet (16) into a chamber (15) is diffused by a diffusion filter (18) to produce a uniform laminar flow in a horizontal direction, and the laminar flow exits from the chamber (15) through an opening (41) to prevent outside air from entering the chamber (15), thereby maintaining a low oxygen concentration atmosphere within the chamber (15). Performing heat treatment upon a substrate by a heater (30) within the chamber (15) prevents oxygen molecules from being introduced into a film on the substrate to provide a low dielectric constant of the film. Within the chamber (15), the substrate (W) held on a transport arm (60) in which a coolant is circulated is rapidly cooled down. Thus, processing time is shortened, and high processing efficiency is provided.

Abstract: A vertical heat-processing apparatus includes a surrounding member, which surrounds a process chamber and a heater. The surrounding member forms a heating space around the process chamber. The heating space has zones juxtaposed in a vertical direction. Temperature sensors are arranged to detect temperatures respectively representing the zones. Supply pipes are arranged to respectively supply a cooling gas to the zones. The supply pipes are respectively provided with valves controlled by a controller. The controller adjusts opening degrees of the valves such that a flow velocity of the cooling gas in a first zone having a lower cooling rate becomes higher than a flow velocity of the cooling gas in a second zone having a higher cooling rate used as a reference.

Abstract: A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate.

Abstract: A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.

Abstract: A cooking oven comprises a cavity having a separating and insulating plate which can be inserted horizontally in the cavity in order to split it in two sub-cavities. Each sub-cavity has heating elements on its side walls. The oven sub-cavities can be singularly or separately and this increases flexibility in use.

Abstract: A baking oven includes a metallic baking oven muffle that can be closed off on a front side by a door. The muffle walls have heating elements for heating the cooking chamber to over approximately 180° C. and/or for heating the food disposed therein to be cooked. The muffle has a protective layer covering the muffle walls at least on the inner side. To improve the use properties of the baking oven muffle, the thickness of the protective layer is less than approximately 30 &mgr;m. The protective layer is formed as a hard sol-gel layer having a thickness of approximately 10 &mgr;m, preferably, between approximately 5 and 10 &mgr;m. The protective layer is transparent. The inner sides of the muffle serve as a reflector. A functional sol-gel layer is disposed on the hard sol-gel layer. The functional sol-gel layer has a thickness of approximately 10 &mgr;m, preferably, 2 to 3 &mgr;m. When the muffle is aluminum, the protective layer is an anodized aluminum oxide layer.

Abstract: An apparatus for the rapid thermal processing of a semiconductor wafer is disclosed. The apparatus includes a preheat unit for preheating a gas composition, and a RTP reactor having a processing chamber and a heat source for heating the wafer. The processing chamber has a wafer holder, and a gas inlet and a gas outlet through which the preheated gas composition flows in and out of the processing chamber.

Abstract: A reflector structure is provided for improving irradiation uniformity of a linear lamp array applied in a semiconductor process. The reflector structure includes a central reflector, two side reflectors, and two inclined reflectors. The central reflector is horizontally set above the linear lamp array at a first predetermined distance from a wafer for reflecting light irradiated from a central part of the linear lamp array to the wafer. The two side reflectors are horizontally set above the linear lamp at a second predetermined distance to the wafer, wherein the second predetermined distance is less than the first predetermined distance, and respectively connected to two opposite side parts of the central reflector for reflecting light irradiated from side parts of the linear lamp array to the wafer.

Abstract: The heat treatment apparatus of the present invention comprises a chamber, a hot plate for supporting and heating a substrate in a chamber, a gas supply mechanism having a single or a plurality of gas blow-out ports and arranged in an upper space above the hot plate in the chamber, for supplying a gas along the substrate so as to cover the substrate placed on the hot plate, and an exhaust mechanism having a single or a plurality of gas converge/exhaust ports which face the gas blow-out ports with the hot plate interposed therebetween, for converging and exhausting the gas blown out from the gas blow-out ports, from the chamber, the gas converge/exhaust ports having an effective exhaustion opening length L2 which is shorter than an effective blow-out opening length L1.

Abstract: A system for uniformly and controllably heating the active surface of a semiconductor wafer or substrate during processing. The present invention may include a radiation energy source provided, which is enclosed or substantially surrounded by a reflective/absorptive surface, which both reflects and absorbs the radiation, emitted from the energy source. In accordance with the present invention, the resultant energy output as seen by the wafer is substantially free of non-uniformity.

Abstract: A semiconductor processing system includes a process chamber and an assembly of radiant energy sources. The radiant energy assembly is filled with a thermally conductive gas to cool the radiant energy sources.

Abstract: In a broad aspect, the invention is a conveyorized oven for heating food products comprising: a cavity having two continuous access openings; a convection heating source, the convection heating source including a heating element, a blower, and a plenum in communication with the cavity, the convection heating source providing heated air to the cavity; an upper radiant energy heating source in communication with the cavity, the upper radiant energy heating source including an infrared light source and at least one reflector providing radiant energy to the cavity; a lower radiant energy heating source in communication with the cavity, the lower radiant energy heating source providing radiant energy to the cavity; and a conveyor system for transporting food products through the first continuous access opening, the cavity, and the second continuous access opening at a rate of speed sufficient to allow the food products to be heated.

Abstract: A thermal processing apparatus includes a reaction vessel into which an object to be processed is conveyed, a furnace body disposed so as to surround the reaction vessel, and a heater disposed in a region surrounding the reaction vessel in the furnace body. The heater includes heating elements, each having a sealing member made of a ceramic material and a linear flexible resistance heat generating member sealed by the sealing member.

Abstract: A method for heating LowE glass panels in a tempering furnace (1) provided with rollers. LowE glass panels are carried on a conveyor constituted by rollers (2) into the tempering furnace and then the discussed glass panels are set in an oscillating motion within the tempering furnace for the duration of a heating cycle. This is followed by delivering the discussed glass panels into a tempering station (3). In the tempering furnace, the glass panels are heated by means of top and bottom radiation heating elements (4, 5), as well as by top and bottom convection heating elements (6, 7). In the early stage of a heating cycle the top glass surface is subjected to convection heating more powerful than that applied to the bottom surface and in the final stage of a heating cycle the bottom glass surface is subjected to convection heating more powerful than that applied to the top surface.

Abstract: A system and process is disclosed for rapidly heating semiconductor wafers coated with a highly reflective material on either the whole wafer or in a patterned area. The wafers are heated in a thermal processing chamber by a plurality of lamps. In order for the wafer coated with the highly reflective material to more rapidly increase in temperature with lower power intensity, a shield member is placed in between the wafer and the plurality of lamps. The shield member is made from a high emissivity material, such as ceramic, that increases in temperature when exposed to light energy. Once heated, the shield member then in turn heats the semiconductor wafer with higher uniformity. In one embodiment, the shield member can also be used to determine the temperature of the wafer as it is heated.

Abstract: A quartz window decreases an amount of absorption of heat from a heat source while maintaining a pressure difference between the pressure inside a process chamber and an atmospheric pressure. The process chamber defines a process space for processing an object to be processes. A placement stage is provided in the process chamber so as to place the object to be processed thereon. A gas supply part which supplies to the process chamber a process gas for processing the object to be processed. The quartz window is provided as a part of the process chamber so that the quartz window is opposite to the object to be processed placed on the placement stage. A heating unit has a heat radiation lamp provided on an opposite side of the process chamber with respect to the light-transmitting window. The quartz window constitutes a convex lens part which is formed on a periphery of the quartz window and protrudes into the process space.

Abstract: An improved apparatus and method for thermal processing of semiconductor wafers. The apparatus and method provide the temperature stability and uniformity of a conventional batch furnace as well as the processing speed and reduced time-at-temperature of a lamp-heated rapid thermal processor (RTP). Individual wafers are rapidly inserted into and withdrawn from a furnace cavity held at a nearly constant and isothermal temperature. The speeds of insertion and withdrawal are sufficiently large to limit thermal stresses and thereby reduce or prevent plastic deformation of the wafer as it enters and leaves the furnace. By processing the semiconductor wafer in a substantially isothermal cavity, the wafer temperature and spatial uniformity of the wafer temperature can be ensured by measuring and controlling only temperatures of the cavity walls.

Abstract: A semiconductor processing system including a printed circuit board structure for delivering power to an assembly of radiant energy sources. The printed circuit board structure, in one configuration, forms an evacuable housing for the assembly of radiant energy sources.

Abstract: A method of detecting a temperature of an object in a multiple-reflection environment by a radiation pyrometer includes the steps of detecting a radiation strength emitted from a target region of an object, applying a correction to the radiation strength so as to correct the effect of multiple reflections of a radiation emitted from the object, applying a correction to the radiation strength so as to correct a reflection loss caused at an end surface of an optical medium interposed between the object and a sensing head of the pyrometer, applying a correction to the radiation strength with regard to an optical absorption loss caused in the optical medium, and applying a correction to the radiation strength with regard to a stray radiation coming in to the sensing head from a source other than the target region of the object.

Abstract: A wafer treatment apparatus includes a wafer heating device having a wafer-load region at an upper portion, a shower head opposing the wafer-load region for ejecting/directing a source gas toward the wafer surface, and a reflecting apparatus positioned between the shower head and the heating device for reflecting thermal energy radiated from the heating device back toward the wafer-load region. The reflecting apparatus includes a reflector positioned above and opposing the wafer-load region, and a supporter for supporting the reflector. The reflector may have a flattened reflecting surface facing toward the wafer-load region, or may be a semi-spherical type reflector having a concave mirror facing toward the wafer-load region. The reflector can be controlled to move vertically relative to the wafer.

Abstract: The present invention relates to a device capable of cooking food products in a short time so as to concentrate the emitted light on the food product using a lamp emitting light in an infrared region. More particularly, it is capable of cooking the food product in a short time by concentrating light in the visible light region within a wavelength range of more than 1.35 &mgr;m on the food product using a luminous unit for emitting light in the infrared light region and a reflecting plate for concentrating the emitted light in the infrared light region.

Abstract: A substrate processing assembly includes an edge support and a heat distributing plate to absorb and transfer heat energy via radiation from a radiant heat source to a substrate on the edge support. The edge support defines a substrate support location to support a substrate at an edge of the substrate during processing. The assembly further includes a first heat distributing plate positioned generally parallel to the edge support. A plurality of edge support holding arms is coupled to the edge support. The plurality of edge support holding arms is also coupled to the first heat distributing plate to hold the first heat distributing plate spaced apart from the edge support. In another embodiment, the assembly can include a second heat distributing plate spaced apart from the edge support.

Abstract: A semiconductor substrate processing system and method of using a stable heating source with a large thermal mass relative to conventional lamp heating systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the substrate while reducing the potential of heat loss to the surrounding environment, particularly from the edges of the heat source and substrate. Aspects of the present invention include a dual resistive heater system comprising a base or primary heater, surrounded by a peripheral or edge heater. The impedance of the edge heater may be substantially matched to that of the primary heater such that a single power supply may be used to supply power to both heaters. Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity. The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged.

Abstract: An electric toaster oven having a housing, a heating element connected to the housing, a reflector connected to the housing, and an object supporting rack connected to the housing and forming an article receiving area between the rack and the housing for receiving an article to be heated. The rack has a stepped profile with raised side sections connected to the housing and a lower main section. A lower area of the article receiving area is defined by a top of the lower main section. The reflector has a generally inverted V shaped side profile with a generally concave area facing the heating element.

Abstract: An apparatus, system, and method for uniformly and controllably heating the active surface of a semiconductor wafer during processing. The present invention includes a scanner assembly, which is operable to scan over a single semiconductor wafer. A radiation energy source is provided enclosed within the main body of the scanner assembly. The radiation energy source may be surrounded by a reflective/absorptive surface, which reflects and absorbs the emitted radiation, such that the resultant energy output is substantially free of non-uniformities. The reflected energy is directed through a slit in the scanner assembly to the wafer. The narrow wavelength band of energy allowed to escape the scanner assembly is uniformly scanned over the wafer to heat only the active layer of the wafer surface.

Abstract: The heat treatment apparatus of the present invention comprises a chamber, a hot plate for supporting and heating a substrate in a chamber, a gas supply mechanism having a single or a plurality of gas blow-out ports and arranged in an upper space above the hot plate in the chamber, for supplying a gas along the substrate so as to cover the substrate placed on the hot plate, and an exhaust mechanism having a single or a plurality of gas converge/exhaust ports which face the gas blow-out ports with the hot plate interposed therebetween, for converging and exhausting the gas blown out from the gas blow-out ports, from the chamber, the gas converge/exhaust ports having an effective exhaustion opening length L2 which is shorter than an effective blow-out opening length L1.

Abstract: The apparatus provides a temperature controlled environment for processing semiconductor wafers at elevated temperatures. A hot wall process chamber is used for the process steps. The process chamber includes three zones with independent temperature control capabilities. The apparatus is capable of rotating the wafer in addition to providing a gas flow velocity gradient above the wafer for improved temperature and processing uniformity results.

Abstract: A method is provided, the method comprising preheating a rapid thermal processing chamber according to a preheating recipe and processing a first plurality of workpieces in the rapid thermal processing chamber. The method also comprises performing first parameter measurements on first and second workpieces of the first plurality of workpieces, the first parameter measurements indicative of first processing differences between the first and second workpieces, and forming a first output signal corresponding to the first parameter measurements. The method further comprises adjusting the preheating recipe based on the first output signal and using the adjusted preheating recipe to preheat the rapid thermal processing chamber for processing a second plurality of workpieces in the rapid thermal processing chamber to reduce second processing differences between first and second workpieces of the second plurality of workpieces.

Abstract: A method and apparatus for heating a loadlock to inhibit the formation of contaminants within the loadlock. At least one heater is attached to the walls of the loadlock to boil contaminants from the surfaces within the loadlock. These desorbed contaminants are exhausted from the loadlock by a vacuum pump. Alternatively, a purge gas can be supplied to the loadlock while the loadlock is being heated. The flow of purge gas flushes the desorbed contaminants from the loadlock.

Abstract: An oven view window comprising a glass substrate, and having disposed on a major surface thereof, a thermally activated, light-scattering coating which, when at a temperature below the activation temperature of the coating is translucent-to-opaque in appearance, but when at a temperature above the activation temperature of the coating is essentially transparent in appearance. Optionally, an infrared reflective coating and a color suppressing coating may also be deposited, in a variety of configurations, onto the oven view window carrying the thermally activated, light-scattering coating.

Abstract: An apparatus for manufacturing semiconductor devices includes a main chamber with a main heater for heating the main chamber and a single preliminary chamber, which is cylindrically shaped and is provided under the main chamber. The preliminary chamber is separated by a shutter from the main chamber and has a preliminary heater for heating the preliminary chamber. The preliminary chamber has at least a pair of doors.

Abstract: An apparatus for the thermal treatment of substrates is provided. The apparatus includes a reaction chamber, at least one elongated heat source, and at least one reflection wall that is disposed adjacent to the heat source and serves to reflect at least a portion of the radiation given off thereby. The reflection wall has at least one rib, and the heat source is disposed at an oblique angle to the longitudinal direction of the rib.

Abstract: In a heat processing apparatus structured to heat a wafer on a hot plate, a black plate at least the rear face of which practically has a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate. Thus, the temperature of the hot plate can be cooled rapidly.

Abstract: A radiant oven for treating a web of material has oven chambers, electric radiant heaters and buffer plates. The material treated in the oven chamber is isolated from the heaters by the buffer plates. The buffer plates also prevent solvent vapors from reaching the heaters. This invention allows the use of nonclassified electric radiant heaters to treat material in a classified oven chamber.

Abstract: Semiconductor processing apparatus, including a chamber, into which a semiconductor wafer is introduced for processing thereof and a heater, which heats the wafer in the chamber. A radiation guide collects thermal radiation from a selected region of the wafer. A wafer support assembly supports the wafer and shields the radiation guide from radiation other than radiation from the region. A pyrometer, coupled to receive the radiation from the guide, analyzes the radiation to determine a temperature of the region, for use in controlling the processing.

Abstract: A heating assembly for heating a semiconductor substrate in a processing chamber of a reactor includes a plurality of heater supports and a plurality of heating devices supported by the heater supports. The heater supports provide conductive paths for the heating devices for coupling the heating devices to an external power source and, further, are adapted to cool the heating devices whereby the heating devices may be operated at a high power output while maintaining the temperature of the heating devices below a maximum temperature. Preferably the heater supports are cooled by a coolant system, for example a coolant system which circulates coolant through at least a portion of the heater supports to thereby cool the heater supports and the heating devices.

Abstract: A system for heating a plurality of semiconductor wafers at the same time includes a thermal processing chamber containing a substrate holder designed to hold from about three to about ten wafers. The thermal processing chamber is surrounded by light energy sources which heat the wafers contained in the chamber. The light energy sources can heat the wafers directly or indirectly. In one embodiment, the thermal processing chamber includes a liner made from a heat conductive material. The light energy sources are used to heat the liner which, in turn, heats the wafers. In an alternative embodiment, energy dispersing plates are placed in between adjacent wafers. Light energy being emitted by the light energy sources enters the energy dispersing members and gets distributed across the surface of adjacent wafers for heating the wafers uniformly.

Abstract: A novel rapid thermal process (RTP) reactor processes a multiplicity of wafers or a single large wafer, e.g., 200 mm (8 inches), 250 mm (10 inches), 300 mm (12 inches) diameter wafers, using either a single or dual heat source. The wafers or wafer are mounted on a rotatable susceptor supported by a susceptor support. A susceptor position control rotates the wafers during processing and raises and lowers the susceptor to various positions for loading and processing of wafers. A heat controller controls either a single heat source or a dual heat source that heats the wafers to a substantially uniform temperature during processing. A gas flow controller regulates flow of gases into the reaction chamber. Instead of the second heat source, a passive heat distribution is used, in one embodiment, to achieve a substantially uniform temperature throughout the wafers. Further, a novel susceptor is used that includes a silicon carbide cloth enclosed in quartz.

Abstract: The present invention relates to a device capable of cooking food products in a short time so as to concentrate the emitted light on the food product using a lamp emitting light in an infrared region. More particularly, it is capable of cooking the food product in a short time by concentrating light in the visible light region within a wavelength range of more than 1.35 &mgr;m on the food product using a luminous unit for emitting light in the infrared light region and a reflecting plate for concentrating the emitted light in the infrared light region.

Abstract: A processing chamber and methods for employing this processing chamber to thermally treat wafer-like objects. The chamber comprises a double walled shell, a pedestal style heater, internal passages for the transport of cooling gases and removal of exhaust gases, independently variable gas introduction patterns, and a movable door for sealing the chamber. The chamber is designed to permit in situ cooling of wafer-like objects and to provide means for precise optimization of this cooling. The methods provide for the processing of the wafer-like object in an environment where the temperature, rate of change of the temperature, composition of gases and the relative timings of changes to these variables may be controlled to achieve the desired material properties in the wafer-like object or in films contained on this wafer-like object.

Abstract: A thermally efficient, low voltage, portable convection/conduction cooking oven that is an improvement of combination conduction/convection ovens, portable or permanently affixed in place. The oven contains a low thermal mass conductive cooking slab 6 heated by lower elements 17. The oven utilizes convective cooking by moving air with fan 10 across upper elements 9. The oven successfully utilizes 110-volt service, energizing upper elements 9 and lower elements 17 with a cumulative draw of no more than 1550 watts and 13.5 steady state amps while cooking foods in one fourth to one third the time of conventional ovens. The low thermal mass conductive cooking slab temperature is maintained optimally stable by means of lower heating elements 17 remaining energized throughout the conductive cooking process. The oven utilizes a unique grouping of thermally efficient improvements.

Abstract: In integrated semiconductor manufacturing, semiconductor dies may be packaged in ceramic packages. Such packages typically have a base into which the semiconductor die is placed and typically have a lid which seals the package. A halagen lamp radiant chamber significantly reduces the time it takes to seal the package.

Abstract: A heat treatment apparatus has a heater 30, which is arranged between a vacuum vessel 2 and a magnetic field generator 20. The electric heater is arranged so as to surround the outer peripheral surface of the vacuum vessel 2, and a fluid cooling section 33 arranged between the electric heater 31 and the magnetic field generator 20.

Abstract: A heating apparatus and method for isothermally distributing a temperature across the surface of a semiconductor device during processing. Specifically, a chamber is provided defining a cavity, which is configured to receive a single semiconductor wafer. A plurality of resistive heating elements are provided and advantageously arranged in the cavity. The heating elements are disposed across the chamber and are aligned in close proximity to one another so as to provide an even heating temperature distribution. In accordance with the present invention, the cavity is divided into heating zones. The resistive heating elements are each individually assigned to a zone and are independently controllable. By individually varying the amount of energy emanating from each resistive heating element, an isothermal temperature distribution may be generated across each zone.

Abstract: A substrate heat treatment apparatus irradiating a substrate such as a semiconductor wafer with light and performing heat treatment is provided. 19 lamps 82 are arranged on a plane in the form of a honeycomb to form a lamp group 81. The lamp group 81 has 6-fold rotation symmetry about a symmetry axis XR. A substrate W is rotated about a rotation axis XW in a plane parallel to that formed by the lamp group 81. The symmetry axis XR of the lamp group 81 and the rotation axis XW of the substrate W are displaced for relaxing peaks and bottoms of illuminance distribution on the substrate W resulting from regularity of arrangement of the lamp group 81. Consequently, fluctuation of radial illuminance distribution on the substrate W is reduced and improving uniformity is improved. When the uniformity of radial illuminance distribution on the substrate W is improved, temperature uniformity of the substrate W in heat treatment can be ensured.

Abstract: A plurality of filament lamps having filaments arranged within an annular light emitting tube are arranged coaxially within a plane to provide a group of lamps, and a plurality of groups of lamps are arranged in a step-like manner with their centers coinciding with each other to form a lamp unit LU. A lamp chamber having this lamp unit arranged therein is provided with a cooling air inlet port and a cooling air outlet port. An inner surface of a side wall of the lamp chamber is provided with a mirror. A workpiece holding block arranged in a light radiation chamber below the lamp chamber can be rotated.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A heating method for heating an object by making use of a heating apparatus comprising lamps and light transmissive columnar bodies each being positioned in front of and in the light irradiating direction of each of the lamps and having a fore-end constituting a light-receiving face for taking up an irradiated light from the lamp and a rear-end constituting a light-irradiating face for irradiating light; the object being disposed to face the light-irradiating faces of the light transmissive columnar bodies and heated by the irradiation of light transmitted via the light transmissive columnar bodies from the lamps. A distance between the light-irradiating faces of the light transmissive columnar bodies and the object is set to around 0.3L or not less than 0.8L (herein, L is a width of the light-irradiating face).

Abstract: A thermal processing system and method for processing a semiconductor substrate. A lamp system radiates through a window to heat the substrate. A dual gas manifold provides purge gas through a top showerhead to prevent deposits on the window and provides gas through a lower showerhead to deposit a material on the substrate. A thin support and a radiative cavity with thin radiation shields is used to support and insulate the substrate. A peripheral heater also heats the edges to enhance uniformity. An opaque quartz liner is used to reduce contaminants and undesired deposits and simplify cleaning.