Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A method of operating a bake plate disposed in a semiconductor processing chamber having a face plate opposing the bake plate includes providing a temperature control signal to the bake plate and measuring a face plate temperature associated with the face plate. The method also includes determining a difference between the face plate temperature and a predetermined temperature and modifying the temperature control signal provided to the bake plate in response to the determined difference.

Abstract: The present invention is an improved electronic oven; a tabletop, or toaster oven that contains a vertically moveable heating element. The moveable heating element allows a range of foods and/or portions of food to be cooked or heated in the most efficient manner possible, saving time and energy use. A heat directing plate disposed above the moveable heating element further increases efficiency by directing heat onto the food.

Abstract: A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.

Abstract: A radiator apparatus for concentrating or dispersing energy. In one embodiment, the radiator includes a thermal conductive layer, a radiation layer, and a thermal insulation layer. The radiation layer is powered by an energy source and includes at least one radiation element embedded in at least a portion of the thermal conductive layer. The thermal insulation layer faces the thermal conductive layer. In another embodiment, the radiator includes a generally helical dome-shaped radiation member powered by an energy source and a generally dome-shaped reflection member including a reflective surface facing the radiation member. In yet another embodiment, the radiator includes a radiation member powered by an energy source and a reflection member having an at least partially ring-shaped concave reflective surface facing the radiation member for distributing energy to an at least partially hat-shaped or ring-shaped area or zone.

Abstract: During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.

Abstract: A substrate processing apparatus includes a process chamber including upper and lower quartz walls, a substrate support disposed in the process chamber, radiant heaters respectively provided above and below the quartz walls of the chamber, and heat reflectors disposed outside the process chamber for reflecting heat towards the substrate support. Each of the heat reflectors has heating has a first thermally reflective section oriented to reflect the heat towards an outer peripheral region of the substrate support and a second thermally reflective section oriented to reflect the heat towards a central region of the substrate support. Each heat reflector also has a reflection angle adjusting mechanism by which an angle at which the second thermally reflective section reflects heat can be adjusted. The angle is adjusted depending on the temperature distribution across the substrate so that the substrate can be processed uniformly.

Abstract: The present invention provides a cooling device used for a process for heating and cooling a substrate constituting an image display apparatus that uses electron emitting devices. The cooling device includes a cooling plate located opposite the substrate to absorb radiation heat from the substrate. The cooling plate is provided with a high emissivity area in a pattern located opposite to a low emissivity area of the substrate. This suppresses a variation in a temperature distribution in the substrate during cooling, thus preventing the substrate from being distorted or damaged.

Abstract: An approach for optimizing the thermal budget during a pulsed heating process is disclosed. A heat sink or thermal transfer plate is configured and positioned near an object, such as a semiconductor wafer, undergoing thermal treatment. The heat sink is configured to enhance the thermal transfer rate from the object so that the object is rapidly brought down from the peak temperature after an energy pulse. High thermally-conductive material may be positioned between the plate and the object. The plate may include protrusions, ribs, holes, recesses, and other discontinuities to enhance heat transfer and avoid physical damage to the object during the thermal cycle. Additionally, the optical properties of the plate may be selected to allow for temperature measurements via energy measurements from the plate, or to provide for a different thermal response to the energy pulse. The plate may also allow for pre-heating or active cooling of the wafer.

Abstract: A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.

Abstract: A degassing from a susceptor heated at a high temperature in a vacuum atmosphere is suppressed. The susceptor is disposed between a heater and a substrate and partitions a space in the chamber into a first chamber space where the heater is placed and a second chambers space where the substrate is placed, and the surface of the susceptor facing the second chamber space is coated with a pyrolytic carbon layer (15) of thickness of 10 ?m to 50 ?m.

Abstract: A vacuum thermal annealing device is provided having temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the heated gas flow, a chamber wall heater is turned on and maintains a temperature for a proper annealing time. Upon completion of the annealing process, the chamber wall heater shuts down and air is forced around the chamber wall heater. Additionally, cool gas replaces the heated gas to cool the substrate.

Abstract: A heating apparatus is disclosed having a first region containing a heat source and a second region that is separate from and thermally coupled with the first region via an interface element. The heating apparatus also includes a convection deflector disposed within the interior of the first region to direct convective heat towards the interface element. The deflector can have a geometric shaped cross-section with a first side oriented towards the heat source and an opposing second side oriented away from the heat source. The first and second sides are adapted to reflect radiant and convective heat.

Abstract: A transport robot including a release-side high radiation ratio portion and a receive-side high radiation ratio portion that face each other. Heat in a substrate conducted to a base portion due to thermal conduction is released as radiant heat from the release-side high radiation ratio portion, and the radiant heat is absorbed by the receive-side high radiation ratio portion. The receive-side high radiation ratio portion is formed on a heat-receiving plate that is thermally connected to a vacuum chamber so that radiant heat absorbed by the receive-side high radiation ratio portion is transferred to the vacuum chamber. As a result, even in the case where the high-temperature substrate is transported in a vacuum atmosphere, heat from the substrate is not accumulated in a transport system, and the transport system hardly reaches a high temperature.

Abstract: An oven using radiant heat at infrared wavelengths optimized for producing rapid and uniform cooking of a wide variety of foods. The infrared oven toasts, bakes, broils, and reheats food at a much faster speed while maintaining high quality in taste and appearance of the cooked food. Optimal infrared wavelengths of the radiant heat sources are used for the best balance of cooking performance, while also reducing the time required to cook the food. Typically short to medium wavelength infrared radiant energy will result in good performance for toasting and browning of food. Medium to long wavelength infrared radiant energy is well suited for delivering more deeply penetrating radiant energy into the food. This deep penetration of radiant infrared heat energy results in a more thorough internal cooking of the food than with conventional methods of conduction and convection cooking.

Abstract: According to an aspect of the invention, there is provided a single substrate processing method which continuously heats substrates to be processed to which films containing solvents are applied, by use of a heating apparatus having an opening/closing mechanism, including supplying a gas containing a solvent contained in a film of a first substrate to be processed into the heating apparatus in a closed state of the opening/closing mechanism between processing of the first substrate to be processed and processing of a second substrate to be processed.

Abstract: A cooking appliance heating element shield apparatus and method are provided. The apparatus is adapted for use in an electric self-cleaning cooking appliance of the type having an oven cavity heated by a coil heating element of a heating element assembly. The apparatus includes an elongate main portion comprising a substantially planar surface and adapted for positioning between the oven cavity and a portion of the heating element to dissipate direct heat transmitted to the oven cavity from the heating element. The apparatus also includes at least one connection portion adapted for removably attaching the elongate main portion to the heating element assembly.

Abstract: A cooking appliance with a cooking cavity includes a reflective tray mounted in the cooking cavity, a vent located on the reflective tray, and a heating element mounted within the reflective tray that is configured to reflect heat emitted by the heating element. The vent is configured to allow at least moisture from the cooking cavity to pass therethrough. The heating element is mounted relative to the vent such that the vent is horizontally spaced at a distance greater than a thickness of the heating element. In another example, a vent is located on a central portion of the reflective tray and a heating element is located on an outer portion of the reflective tray. In yet another example, a heating element is mounted within a reflective tray at a horizontal location and a vent is located at a different horizontal location than the heating element.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: An apparatus for manufacturing a semiconductor device includes a treatment chamber in which a working substrate is disposed; a plurality of lamps provided above the treatment chamber; and a reflector provided behind the lamps relative to a direction towards the working substrate, spatially controlling an in-plane distribution of reflection rate of light beams from the lamps, and irradiating the working substrate with light from the lamps.

Abstract: A circuit board and components provided thereupon are held by and between lower and upper palettes. The upper palette has protecting portions that are provided above and opposed to the components. The shielding components prevent light beams irradiated by a preheating light source from directly reaching the components made of colored synthetic resin. Meanwhile, the upper palette has openings that are opposed to the circuit board except for the components protected by the protecting portions members. The light beams from the light source travel through the openings and applied to the circuit board. Openings are formed so as to be opposed to terminals that are soldered on and connected to the circuit board. Inner surfaces of the openings are made of light-reflecting material that reflects downward the light beams from the light source.

Abstract: Temperature measurement and heat-treating methods and systems. One method includes identifying a temperature of a first surface of a workpiece, and controlling energy of an irradiance flash incident on the first surface of the workpiece, in response to the temperature of the first surface. Identifying may include identifying the temperature of the first surface during an initial portion of the irradiance flash, and controlling may include controlling the power of a remaining portion of the irradiance flash. The first surface of the workpiece may include a device side of a semiconductor wafer.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory thermal profile on the substrate based on the initial thermal profile; and performing the process to create a desired thermal profile on the substrate. In other embodiments of the invention, the initial substrate thermal profile is compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. In another embodiment, the heat provided by an edge ring to the substrate may be controlled either prior to or during the substrate heating process.

Abstract: An oven for heating, cooking, or toasting a food product. The oven can comprise a conveyor for conveying the food product, and a parabolically shaped top surface with a plurality of reflectors connected thereto, to direct heat back toward the conveyor. The oven can also comprise a fan for circulating air within the oven cavity. The oven can also comprise a controller that can place the oven in an energy savings mode, when it detects that the oven is not in use. The controller can place the oven in energy savings mode by adjusting the speed of, or shutting off the conveyor, or by adjusting the amount of energy supplied to heating elements disposed within the oven.

Abstract: A silver reflector for reflecting radiation from a lamp in a semiconductor processing chamber is disclosed. The reflector may be a sleeve to be disposed in a lightpipe or part of a lamphead. The silver may be in the form of a coating on the sleeve or the lamphead.

Abstract: A handheld heating tool has a pair of elliptical reflectors with the major axes of the ellipses being at an acute angle to each other and intersecting in a focal region including one focus of each ellipse. A pair of incandescent bulbs are mounted so that each bulb filament is at the other focus of one of the elliptical reflectors. Thus, radiant energy from both bulbs is concentrated at the focal region. This focal region lies in a channel at the front of the housing of the tool. An object to be heated lying in the channel receives radiant energy from the lamps and reflectors. A blower directs cooling air toward the reflectors and along different paths within the housing to exit through the channel. One such path is between the outside of the reflectors and adjacent reflector shields.

Abstract: An apparatus for thermally treating semiconductor substrates has a processing space which is defined by first walls substantially parallel to the semiconductor substrate and a second side wall connected to the first walls; a substrate holding device disposed in the processing space which defines a substrate retaining region for a semiconductor substrate in the processing space; and heating elements which are disposed in the processing space between at least one of the first walls and the substrate retaining region. The thermal gradient between the edge of the semiconductor substrate and the center of the semiconductor substrate can be effectively compensated by providing a shutter between the substrate retaining region and the heating elements which limits the radiation emitted in the processing space by the heating elements in the direction of the substrate retaining region.

Abstract: Provided is a light processing apparatus which can judge goodness or badness of small amount and various kind processing, and is useful for small amount and various kind processing, and can realize light processing at an appropriate position in conformity with a state of a substrate, at low cost, and can prevent production of a bad item before it happens, and enables local heating by focusing light energy, and is useful for a processing apparatus such as solder joint or heat processing of resin and a production equipment which used this. A state of an object to be processed enters into an image receiving unit, through a first light path and a second light path. This image and an image which was set up in a storage device in advance are compared, and goodness or badness judgment is carried out. There occurs a change of a point to be irradiated, in an approximately horizontal direction to the first light path, between a case that the object to be processed is in a warp age state, and a case that it is not so.

Abstract: A heat treating device (50) has a cooling sleeve that covers a treating vessel (56) and a heater (100). The cooling sleeve has a cylindrical base member (110) and a cooling pipe (112) spirally wound on the outer peripheral surface hereof. The cooling pipe (112) is brazed to the base member (110).

Abstract: A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

Abstract: A heating system of a batch type reaction chamber for semiconductor device and a method thereof are disclosed. Each heat unit of heating groups has different height and caloric value at right angles according to the divided areas, thereby it can control an uniform temperature incline of the entire process space of the reaction chamber. Also, the reflecting plates are formed by each heating unit, so that the change of the heating unit can be simple. Furthermore, the divided reflecting blocks are adjacently connected to another reflecting block through the radiant wave shielding slit between them, so that the leakage of the radiant wave can be prevented and the reflecting blocks can be separately attached and deattached to each other. Also, the turning member is formed at the lower portion of the reflecting blocks, so that it can be easily attached and deattached.

Abstract: The present invention relates to a method for heat processing of a substrate having the step of baking a substrate, on which a coating film is formed, at a predetermined high temperature, comprising a first step of increasing the substrate from a predetermined low temperature to a predetermined intermediate temperature lower than a predetermined reaction temperature at which the coating film reacts, a second step of maintaining the substrate at the predetermined intermediate temperature for a predetermined period of time, and a third step of increasing the temperature of the substrate to the predetermined high temperature higher than the predetermined reaction temperature.

Abstract: Methods and systems for controlling and adjusting heat distribution over a part bed are disclosed. In one embodiment, a technique for providing a calibrated heat distribution over a part bed includes determining the temperature distribution within a part bed, generating a zone heat distribution for a plurality of heat zones from the temperature distribution, analyzing the zone heat distribution to create an adjustment command to calibrate a heater for providing a substantially consistent temperature distribution within the part bed, and adjusting the heater based on the adjustment command.

Abstract: To provide a photo-irradiation type heat treatment apparatus that eliminates the adverse influence of a light transmitting window on the temperature distribution of an article to be treated without losing the original function of a reflecting mirror a photo-irradiation type heat treatment apparatus in which heat treating of an article is performed by irradiating the article with light emitted from multiple filament lamps through a light transmitting window, by providing the apparatus with a reflecting mirror having an opening at its central area so that cooling air can pass therethrough and by providing an air permeable reflector so as to cover the opening in the reflecting mirror.

Abstract: A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.

Abstract: An infrared heater includes a support body and a heat source irradiating device. The heat source irradiating device includes a reflecting hood, a hood body, two non-planar symmetric arc bodies disposed on the top surface of an n-shape body, a casing, and an infrared tube, such that a radiant heat at the upper half of the infrared tube can be radiated from an open end having an included angle from 60° to 80° from the hood body after the radiant heat is reflected from the two arc bodies. Its radiant heat can avoid the infrared tube during its reflection to improve the heat reflecting efficiency, extend the life expectancy of the infrared tube, and enhance the irradiating range of the heater and the evenness of heat energy.

Abstract: Bake apparatus for use in baking a substrate, such as a semiconductor wafer, includes a chamber, a hot plate installed within the chamber, and first and second buffer plates for uniformly dispersing hot gas. The hot plate is configured to support the semiconductor wafer. The gas is injected into the chamber through an air passageway and is exhausted through an air exhaust opening. The first buffer plate is disposed within an upper part of the chamber so as to uniformly disperse the gas within the chamber. The second buffer plate is disposed above the first buffer plate. The first and second buffer plates each have a number of discharge holes by which the gas is uniformly discharged from the chamber to the exhaust opening.

Abstract: A heater is disclosed. The comprises a housing; a reflector; and a pair of opposite connectors supported by the reflector and configured to support opposite ends of a heating element. The reflector is movable between a plurality of positions relative to the housing.

Abstract: A thermotherapy device is operated as an incubator or as an open care unit. The care unit has a bed for receiving newborns, which can be closed with a hood (3). At least one heat radiation source (4) is provided. The hood (3) is located between the bed and the heat radiation source (4) when the thermotherapy device is closed and the hood is at least partially transparent to the radiation originating from the heat radiation source (4). The device allows only a small temperature drop during the transfer from the open mode of operation into the closed mode of operation and vice versa.

Abstract: A substrate transportation device includes a housing for transporting substrates. The housing is formed of an upper surface, a lower surface, and opposing sidewalls. The housing has a rear opening through which the substrates enter the housing and a front opening through which the substrates exit the housing. A plurality of hollow supporting members are disposed within the housing and affixed to the opposing sidewalls which are formed by a plurality of columns. The hollow supporting members have a plurality of apertures in an upper surface for supplying a medium to a lower surface of the plurality of substrates. A medium supply member transfers the medium toward the hollow supporting member. The medium transferred by the medium supply member is delivered through the apertures in the upper surface of the plurality of hollow supporting members to float the substrates on a cushion of air.

Abstract: Device (1) for the heat treatment of scalp hair (2) of a person (3), consisting of one first and one second heat radiator (11, 12), which are formed and arranged facing each other as a left side radiator (4) and as a right side radiator (5) to provide heat (6) to the side scalp hair (7), wherein the left side radiator (4) has one first ring-shaped infrared radiator (21) with one first shell ring reflector (22) and the right side radiator (5) has one second ring-shaped infrared radiator (21.1) with one second shell ring reflector (22.

Abstract: A device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone. During annealing, the device applies (1) a basic thermal budget to the wafer, with the basic thermal budget being slightly inferior to the budget necessary to detach the layer, this budget being distributed in an even manner over the weakened zone; and (2) an additional thermal budget is also applied to the wafer locally in a set region of the weakened zone so as to initiate the detachment of the layer in this region.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

Abstract: A vertical heat processing apparatus includes a process chamber (5) defining a process field (A1) configured to accommodate a plurality of target substrates (W) supported at intervals in a vertical direction. The apparatus further includes a heating furnace (8) surrounding the process chamber (5) and including an electric heater (15), and an electric blower (16) configured to send a cooling gas into the heating furnace (8). A control section (22) executes, in order to converge the process field (A1) to a target temperature, performing power feeding to the heater (15) to heat up the process field (A1) to a predetermined temperature immediately below the target temperature, and at a time point when the process field (A1) reaches the predetermined temperature, decreasing the power feeding to the heater (15), and supplying the cooling gas from the blower (16) to forcibly cool the process field (A1).

Abstract: The present invention relates to an apparatus and method for heating a semiconductor processing chamber. One embodiment of the present invention provides a furnace for heating a semiconductor processing chamber. The furnace comprises a heater surrounding side walls of the semiconductor processing chamber, wherein the heater comprises a plurality of heating elements connected in at least two independently controlled zones, and a shell surrounding the heater.

Abstract: A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.

Abstract: A process module tuning method characterizes a process module by gathering data using a process condition measuring device to measure process outputs while inputs are excited. The data is used to identify a dynamic process model. The dynamic process model is then be used to determine process input settings that will produce desired outputs. For multi-zone process modules, the interactions between zones may be modeled.

Abstract: A heating device has a heating chamber 3. An initial temperature distribution is created in a surface of a substrate (wafer W) when the substrate is carried into the heating chamber 3 . . . . Temperature distribution creating means (heating lamps 2) creates a preheating temperature distribution in the substrate supported on a cooling plate 4 at a waiting position before the substrate is carried into the heating chamber 3 so as to level out the initial temperature distribution.