Abstract: A furnace for heat treating of metal parts includes a hot zone enclosure defining a hot zone therein. The hot zone enclosure has a side wall, a first end wall, and a second end wall. The side wall has slots formed therethrough and along the length thereof. The heat treating furnace also includes a system for injecting a cooling gas into the hot zone through the hot zone enclosure. The heat treating furnace further includes a damper arrangement for directing the cooling gas over a selected portion or portions of the workpiece load and through one or more of the slots. In one embodiment of the invention, all actuated components in the furnace are located outside of the hot zone to minimize damage to moving parts that are caused by exposure to extreme heat.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A heated substrate support and method for making the same is generally provided. In one embodiment, a heated support includes a first and second plates having a heating element disposed therebetween. The heating element is biased against the first plate to provide good heat transfer therewith. In another embodiment, a heated support includes a first metallic plate coupled to a second metallic plate and sandwiching at least one guide therebetween. A resistive heating element is laterally retained by the guide relative to the first plate. In another aspect of the invention, a heating chamber for heating a substrate is provided. In one embodiment, the heating chamber includes walls defining an interior volume and a plurality of heated support plates coupled to the walls. The support plates are generally stacked parallel to each other within the interior volume. A heating element is urged against each first support plate.

Abstract: A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.

Abstract: A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.

Abstract: A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

Abstract: A housing is mounted to a slide that transports a series of preforms downward under the influence of gravity through a pre-heating apparatus toward a reheat blow molding machine. The housing is coupled to the slide so that a selected portion of each of the series of preforms is shielded from the general enviroment, and heating elements and directing elements are fixed within the housing so that heat from the heating elements is directed toward the selected portion of each series of preforms as the preforms desend down the slide to achieve a persistent thermal gradient in the preforms prior to the re-heating and blow-molding of the preform.

Abstract: A thermal processing system for heating a to-be-processed object while rotating the to-be-processed object by a placement part, and for performing thermal processing on the to-be-processed object by supplying a predetermined gas into a processing chamber. An outer ring part provided outside the processing chamber and an inner ring part provided inside the processing chamber have pluralities of circumferentially arranged magnetic poles. The magnetic poles apply magnetic forces between the outer ring part and inner ring part so that the inner ring part will follow the rotation of the outer ring part. The number of magnetic poles of the outer ring part and inner ring part are selected to achieve an allowable angular error when between the outer ring part and inner ring part during rotation.

Abstract: A substrate support ring has a band having an inner perimeter that at least partially surrounds a periphery of the substrate. The band has a radiation absorption surface. A lip extends radially inwardly from the inner perimeter of the band to support the substrate. The band and lip can be formed from silicon carbide, and the radiation absorption surface can be an oxidized layer of silicon carbide. In one version, the band and lip have a combined thermal mass Tm, and the radiation absorption surface has an absorptivity A and a surface area Sa, such that the ratio (A×Sa)/Tm is from about 4×10?5 m2K/J to about 9×10?4 m2K/J.

Abstract: A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Abstract: A process for annealing large-area multilayer bodies by supplying a quantity of energy at an annealing rate of at least 1° C./s. To suppress temperature inhomogeneities during the annealing, different partial quantities of the quantity of energy are supplied to the layers of the multilayer body with a local and temporal resolution. The multilayer body is annealed in a container which has a base and a cover made from glass-ceramic. The process is used to produce a thin-film solar module.

Abstract: A plurality of flash lamps are covered with a reflector. Optical fiber members are attached to the reflector on portions located immediately above the flash lamps. When the flash lamps emit flash light toward a semiconductor wafer, the optical fiber members partially guide the emitted light so that a CCD measures the intensity of light emitted from each of the plurality of flash lamps. A computer detects the emission state of each of the plurality of flash lamps on the basis of a result of measurement. At this time, the computer compares standard luminous intensity obtained when the irradiation state on the semiconductor wafer satisfies a prescribed criterion with the luminous intensity in actual processing for detecting the emission states of the plurality of flash lamps. Thus provided is a thermal processing apparatus capable of reliably and simply detecting deterioration of lamps.

Abstract: A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.

Abstract: An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.

Abstract: A vacuum oven with heat transfer fluid conduits. The oven of the invention generally includes a shell into which a removable rack may be placed. The rack has at least one plate which may be heated or cooled by a plate fluid conduit in contact with the plate and through which a heating or cooling fluid may be passed. Work pieces may be loaded in the rack, the rack placed in the shell, the shell sealed, and a vacuum drawn within the shell. The work pieces loaded on the rack are primarily heated and cooled by conductive and radiant heat transfer because of the limited amount of thermally conductive gases within the shell.

Abstract: A heat treatment apparatus achieves a uniform and rapid temperature rise of an object to be processed. A plurality of double-end lamps heat the object to be processed so as to apply a heat treatment process to the object. A plurality of reflectors reflect radiation heat of the double-end lamps toward the object to be processed. Each of the double-end lamps includes a rectilinear light-emitting part and at least two double-end lamps among the plurality of double-end lamps are arranged along a longitudinal direction of the light-emitting part, or each of the double-end lamps includes a rectilinear light-emitting part and the plurality of double-end lamps are arranged so that the light-emitting parts are parallel to each other and positioned in at least two stages.

Abstract: Emissivity of a substrate is measured at least before the substrate is heated, heating operation of the substrate is controlled under a heating condition corresponding to the emissivity, and the substrate is processed.

Abstract: An apparatus and method for heating substrates, such as semiconductor wafers. A radiation energy source is arranged proximate to a reflector to direct radiation towards a window providing optical access to a processing chamber. A lens positioned outside of the window focuses the radiation emitted from the radiation energy source and reflector and directs it through the window. The focused radiation energy can be used to directly or indirectly heat a semiconductor wafer disposed the processing chamber.

Abstract: A semiconductor wafer is held by support pins horizontally. A susceptor and a heating plate are moved upwardly so that the semiconductor wafer is transferred from the support pins to the susceptor. At this time, a gas layer is sandwiched between the upper surface of the susceptor and the lower surface of the semiconductor wafer to cause the semiconductor wafer to float over the upper surface of the susceptor for about seventy seconds immediately after the semiconductor wafer is mounted on the upper surface of the susceptor. Then, flash lamps are lit up to perform flash heating while the semiconductor wafer is floating over the upper surface of the susceptor. Even when flashlight irradiation causes rapid thermal expansion of the wafer surface, the semiconductor wafer does not suffer a great stress. This can prevent the semiconductor wafer from breaking.

Abstract: In a light diffuser, a strong light diffusion processing is performed to a lamp corresponding part located in a vertical immediate downward direction of each of a plurality of flash lamps, and a weak light diffusion processing is performed to an inter-lamp corresponding part located between lamp corresponding parts adjacent to each other. Thereby, the light transmittance of the lamp corresponding part is lower than that of the inter-lamp corresponding part. Light that is emitted from each of the flash lamps and directed to a vertical immediate downward direction is diffused intensely, while reducing the degree of light diffusion at a location immediately below space between the adjacent flash lamps, thereby improving in-plane uniformity of illumination distribution on a semiconductor wafer. This enables to provide a thermal processing apparatus capable of improving in-plane uniformity of illumination distribution on a substrate.

Abstract: A method for thermally processing a substrate provides a target substrate temperature and generates a move profile of the substrate within a thermal processing system. An amount of heat is provided to the substrate, and one or more temperatures associated with one or more respective locations on the substrate are measured. A predicted temperature profile is further generated, wherein a predicted temperature of the substrate is based on the amount of heat provided and the one or more measured temperatures. The amount of heat provided to the substrate is further regulated, based on the predicted temperature profile, wherein the substrate is thermally processed generally according to the intended substrate temperature profile. The amount of heat provided to the substrate can be further regulated by controlling a position of the substrate within the thermal processing system.

Abstract: A method for heat treating a multilayer semiconductor wafer having a central region and a peripheral edge each having a surface. The method includes thermally treating selected portions of the peripheral edge to compensate for local differences in heat absorption. This establishes a substantially equivalent temperature over both the surface of the central region and the surface of the peripheral edge to prevent the appearance of slip lines on those surfaces.

Abstract: Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

Abstract: The invention relates to a device for measuring the temperature of substrates, notably semiconductor wafers. The device comprises at least one radiation sensor for measuring the radiation emitted by the substrate and an element (19) which restricts the field of vision of the radiation sensor and is positioned between the substrate and the radiation sensor. The substrate temperature can be determined correctly and simply, even if the substrate vibrates or is tilting, owing to the fact that the edges (20) of the element extend in a straight line. The invention also relates to a corresponding method.

Abstract: An apparatus for heat treatment of a wafer. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.

Abstract: A multi-thermal zone shielding apparatus provides a multi-zone temperature profile for the shield while shielding a portion of a hot workpiece in a high temperature processing system. The apparatus keeps the workpiece temperature hot at the shielded area and maintains the rest of the shield at a lower temperature. The apparatus includes a multi-thermal zone shield having a low thermal transmissivity section for preventing heat loss from the shielded portion of the hot workpiece due to less thermal energy being transmitted through the shielding portion of the shield, thus maintaining a more uniform temperature at the shielded portion of the workpiece, and a high thermal transmissivity section in the rest of shield for allowing more thermal energy from the hot workpiece to be transmitted through the shield without heating the shield, thus maintaining a lower temperature at the portion of the shield that is not engaged with the workpiece.

Abstract: In a light heating apparatus having a flash lamp in which noble gas is enclosed, a casing surrounding the flash lamp, a stage where a silicon wafer on which light from the flash lamp is emitted is placed, and a power feeding apparatus for controlling light emission of the flash lamp, B/A is greater than 1.0 wherein integrated radiant intensity in a range from 220 to 370 nm wavelength is represented as A and integrated radiant intensity in a range from 370 to 800 nm wavelength.

Abstract: An apparatus for baking a semiconductor wafer having a resist pattern thereon includes a baking oven in which the semiconductor wafer is placed and heated, and a first hot plate which is provided in the baking oven to heat an entire bottom surface of the semiconductor wafer. The apparatus also includes a gas supply unit having a gas introducing path, through which the purge gas is introduced into the baking oven, and a gas exhaust path, through which the purge gas is exhausted out of the baking oven. A gas temperature controller controls a temperature of the purge gas in order that the purge gas flowing around a peripheral edge or outer portion of the wafer has a higher temperature than that around the center or inner portion of the wafer.

Abstract: In a system for thermal processing of a semiconductor substrate, an RTP system employs a reflector plate which is highly reflective of radiation in a target wavelength range, and less reflective of radiation outside that target wavelength range. In one embodiment, the reflector plate has a highly reflective portion overlying a less reflective portion, wherein the highly reflective portion is highly reflective of radiation in the target wavelength range. As radiation emitted by the substrate is received on the reflector, the radiation in the target wavelength range is reflected, thereby facilitating measurement of the substrate temperature by the pyrometer(s), while radiation outside the target wavelength range is absorbed, thereby facilitating cooling of the substrate.

Abstract: A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

Abstract: According to one aspect of the present invention, pinhole defects in resist coatings are repaired by heating the resist briefly to induce the resist to flow and fill pinholes. The resist is brought to a temperature at or above that at which the resist flows for long enough to permit the resist to flow and fill pinhole defects, but not so long as to corrupt the resist pattern. The original resist pattern may be biased to allow for some flow during the pinhole repair process. The entire patterned resist may be heated at once, or it may be heated one portion at a time. The application of heat may optionally be limited to locations where pinhole defects are found. By means of the invention, very thin patterned resist coatings free from pinhole defects may be obtained.

Abstract: A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

Abstract: Embodiments of the invention generally provides an apparatus and method for heating substrates, comprising a heater disposed within a chamber, a plurality of heated supports movably disposed within the chamber to support at least two substrates thereon and a contamination collector disposed in communication with the chamber.

Abstract: A reactor chamber is positioned between a top array of LED heat lamps and a bottom array of LED heat lamps. The LED heat lamps forming the top and bottom arrays are individually or controllable in groups such that power output along each array of LED heat lamps can dynamically differ. The LED lamps can be controlled in response to, for example, feedback from chamber sensors, a desired temperature profile, and a failed LED lamp. In this way, the methods and systems described herein can dynamically compensate for operational characteristics of the reactor chamber. In one configuration, the LED heat lamps are arranged in a rectangular pattern. In some configurations, the LED heat lamps are arranged in a circular or a concentric pattern.

Abstract: A heating apparatus 20 comprises a container 2 having a work housing space 1 formed therein, and a heat source 3 for heating a work W in the work housing space 1. The apparatus further comprises a heat ray reflecting member 10 having a heat reflecting surface 10a thereof composed of a heat ray reflecting material, so as to allow the heat ray generated in the work housing space 1 to reflect on the heat reflecting surface 10a to thereby change the direction thereof towards the works W. The heat reflecting material is provided for reflecting heat ray in a specific wavelength band, comprises a stack of a plurality of element reflecting layers comprising materials having transparent properties to the heat ray, in which in the element reflecting layers, two adjacent layers are composed of a combination of materials differed from each other in refractive indices to the heat ray, while keeping difference between the refractive indices of 1.1 or larger.

Abstract: This is an electrically heated ceramic kiln and a method for varying the size of the kiln chamber by moveable top and/or bottom walls which can be moved vertically within the kiln chamber, together with a new method of insulating the kiln and providing captive air chambers about the kiln.

Abstract: A lamphead includes a monolithic member. A plurality of lamp receptacles and reflector cavities are formed in the monolithic member.

Abstract: A thermal processing method is described in which a temperature response of a substrate may be controlled during a heat-up phase or a cool-down phase, or during both phases. This reduces the thermal budget of the substrate and improves the quality and performance of devices formed on the substrate. In particular, by controlling the rate of heat transfer between the substrate and a thermal reservoir (e.g., a water-cooled reflector plate assembly), the temperature response of the substrate may be controlled during the thermal process. The rate of heat transfer may be changed by changing the thermal conductivity between the substrate and the thermal reservoir, by changing the emissivity of a surface of the thermal reservoir, or by changing the distance between the substrate and the thermal reservoir.

Abstract: An apparatus for supporting a substrate and a method for positioning a substrate include a substrate support, a stator circumscribing the substrate support, and an actuator. The actuator is coupled to the stator and adapted to change the elevation of the stator and/or adjust an angular orientation of the stator relative to its central axis. As the substrate support is magnetically coupled to the stator, a position, i.e., elevation and angular orientation, of the substrate support may be controlled.

Abstract: A processing chamber top is provided. The chamber top includes a top surface and a bottom surface having an inner and an outer edge. The bottom surface is sloped downward from the inner edge to the outer edge. A central opening extends through the chamber top. In one embodiment, the downward slope is between about 10 degrees and about 20 degrees. A method for processing a wafer in a processing chamber and a method for uniformly heating a substrate in a processing chamber are also provided.

Abstract: The invention relates to a method and to a device for thermally treating objects. The aim of the invention is to facilitate a better control of the temperature profile of an object to be thermally treated. To this end, the invention provides a method and a device for thermally treating an object in a heating system, especially for treating semiconductor wafers (2) in a rapid heating system (1). The objects are thermally treated at a predetermined temperature progression and the temperature of the object is controlled via a PID control and a feedforward control that are based on a simulation model of the heating system and the object. Said model consists of individual models of components of the heating system and/or the object. The parameters of at least one of the individual models are monitored during the thermal treatment and the model is adapted to the monitored parameters.

Abstract: In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports disposed within the chamber to support at least two substrates thereon; and (3) a heater disposed within the chamber between a sidewall of the chamber and the plurality of substrate supports and having an edge region and a center region. The heater is adapted to produce more heat within the edge region than within the center region of the heater. Numerous other aspects are provided.

Abstract: In a method and apparatus for the thermal treatment of semiconductor substrates, such as a wafer, a wafer is brought into a heat treatment apparatus wherein the heat treatment apparatus comprises two substantially flat parts parallel to the introduction position of the wafer, between which the wafer is taken in. The first part is heated to a first high temperature and the second part is cooled with the help of cooling means and is at a second temperature lower than 70° C. By controlling the heat conductivity between the wafer and at least one of the parts, the temperature of the wafer can be influenced to such an extent that during a certain period, the wafer takes on a temperature that is comparatively closer to the first, high temperature and then takes on a temperature which is comparatively closer to the second low temperature.

Abstract: A wafer etching system has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a number of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a number of heating elements disposed within the chuck. Each heating element is positioned adjacent to one of the preset locations on the wafer. The controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The controller is also coupled to control the heating elements. The controller adjusts the temperature of each heating elements during a process to reduce so as the variation of critical dimensions measured at the preset locations.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: A system and a method for thermally processing a semiconductor substrate are disclosed which provide a heater chamber and a process chamber environmentally isolated from one another by a thermally-transparent plate. A heater assembly situated within the heater chamber comprises one or more quasi-continuous heater elements, and is operable to linearly translate with respect to the process chamber by a linear translation assembly. Thermal radiation is transmitted from the heater elements through the plate toward a substrate situated within the process chamber, wherein one or more temperature sensors measure a temperature associated with one or more respective locations on the substrate. A controller coupled to the one or more temperature sensors, heater assembly, and linear translation assembly controls the thermal radiation emitted by the heater assembly, as well as a distance between the heater assembly and the substrate, wherein the control is based on the one or more measured temperatures.

Abstract: Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.

Abstract: A heating device infrared radiation lamps 24, 26 designed to perform rapid thermal processing of the substrate 12 inside a reaction chamber 14 with a transparent window 34. The infrared lamps 24, 26 are arranged in two superposed stages A, B extending on a single side of the substrate 12, the lamps 24 of the lower stage A being arranged perpendicularly with respect to the lamps 26 of the upper stage B. Adjusting the supply power by of lamps for greater heating on the edges than in the center of the substrate 12. A reflector 36 in the form of a distribution grid 38 is designed to reflect the infrared radiation to control the power ratios between the different heating zones. This results in uniform heating of the substrate 12 regardless of the geometry and dimensions thereof.

Abstract: A heat treatment system for controlling the temperature in a processing vessel. The system includes a cylindrical processing vessel; a supporting table, raised by a support from the bottom portion of the processing vessel, for mounting thereon an object to be processed; and a processing object heating part provided in the supporting table, for heating the object to be processed. In addition a thermoelectric conversion element capable of selectively heating or cooling is provided in the bottom portion of the processing vessel, a resistive heater is provided in the side wall of the processing vessel, and a temperature control part for controlling the operations of the thermoelectric conversion element and the resistive heater is provided. Thus, it is not only possible to appropriately control the temperature in the processing vessel, but it is also possible to reduce space and energy, by combining the resistive heater with a thermoelectric conversion element.