Abstract: A susceptor is formed with a cavity having a tapered surface and a receiving surface. The gradient ? of the tapered surface with respect to the receiving surface is set to at least 5° and less than 30°, so that a semiconductor wafer received by the susceptor can be located on the receiving surface through the tapered surface while the semiconductor wafer can be protected against excess stress also when the surface of the wafer abruptly thermally expands due to flashlight irradiation and can be prevented from cracking in thermal processing. Thus provided are a thermal processing susceptor and a thermal processing apparatus capable of preventing a substrate from cracking in thermal processing.

Abstract: A heat treatment apparatus configured to perform heat treatment on a wafer having a surface on which a coating film is formed, and includes: a holding member for holding the wafer almost horizontally; a chamber for housing the wafer held by the holding member; a hot plate having gas permeability and disposed above the wafer held by the holding member in the chamber so that the coating film formed on the wafer can be directly heated; and an exhaust port provided on the top face of the chamber and exhausting gas in the chamber. Gas generated from the coating film passes through the hot plate and is exhausted from the chamber. Accordingly, uniformity of a coating film is improved. As a result, CD uniformity may be improved, LER characteristics may be improved, and a smooth pattern side face may be obtained.

Abstract: A deposition shield partially covering a substrate and having two zones of different thermal properties can provide minimal deposition on the shield together with minimal heat loss due to substrate contact. A zone of low thermal transmittivity is contact shielding the substrate, and due to the low thermal transmittivity property, there is minimal heat loss of the heated substrate, resulting in a more uniform temperature profile and a more uniform film deposition. A zone of high thermal transmittivity is in the rest of the shield, allowing thermal energy from the heated substrate to transmit through, resulting in a cooler shield and minimal deposition on the shield.

Abstract: As part of a system for processing a workpiece by applying a controlled heat to the workpiece, a heating arrangement includes an array of spaced apart heating elements for use in a confronting relationship with the workpiece to subject the workpiece to a direct radiation that is produced. A radiation shield includes a plurality of members supported for movement between (i) retracted positions, which allow the direct radiation to reach the workpiece, and (ii) extended positions, in which the plurality of members cooperate in way which serves to at least partially block the direct radiation from reaching the workpiece and to absorb radiation emitted and reflected by the workpiece and thereby achieve greater control of the time-temperature profile than previously obtainable. At least certain ones of the members move between adjacent ones of the heating elements in moving those certain members between the retracted and extended positions. Tubular, curved and plate-like member configurations can be used.

Abstract: A wafer, and a tungsten filament radiation heating source comprising at least one lamp arranged in a ring substantially surrounding the wafer edge. The radiation heating source irradiates the semiconductor wafer with radiation directed at the edge of the wafer, so that the radiation is adapted to penetrate the wafer edge and travel between the upper and lower surfaces into a central portion of the wafer sufficient to heat the wafer. The radiation-heating source may also have a reflector for reflecting radiation into the wafer edge, and at least one radiation and/or convection heating source mounted above or below the stage for directly heating one or both of the wafer upper and lower surfaces simultaneously with the radiation heating source surrounding the wafer.

Abstract: In a thermal processing apparatus (1), an upper opening (60) is closed by a transparent plate (61) and a light emitting part (5) emits light through the upper opening (60). Also provided are a susceptor (72) for supporting a substrate (9), a hot plate (71) for heating the susceptor (72) and a cover member (21) between the transparent plate (61) and the susceptor (72). The susceptor (72) has a recessed portion whose depth is larger than the thickness of the substrate (9), a lower surface of the substrate (9) is supported by a bottom surface of the recessed portion, and a periphery of the substrate (9) is surrounded by the side wall portion of the recessed portion. During processing of the substrate (9), the cover member (21) is moved down and brought into contact with an upper end of the side wall portion to close the recessed portion.

Abstract: In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.

Abstract: On the occasion of producing an image display apparatus, in order to suppress the bend and breakage of a substrate by uniformly heating the substrate which constructs a chamber which contains the image display apparatus, a plurality of heaters are located in opposition to both sides of the substrate in a vacuum chamber, which are further surrounded by a heat reflecting member, a partitioning member is located between end faces of the substrate and the heat reflecting member, and the substrate is heated.

Abstract: A thermal processing apparatus, performing processing accompanied with heating on a substrate, having an upper lamp group directed toward a prescribed direction and a lower lamp group perpendicularly intersecting with the upper lamp group is provided with a lower reflector between the upper and lower lamp groups. The lower reflector is so provided as to reflect light from lamps, included in the lower lamp group, present on both end regions in relation to the direction of arrangement. Thus, the thermal processing apparatus can efficiently irradiate an auxiliary ring with reflected light from the lower lamp group and improve temperature uniformity when heating the substrate.

Abstract: A novel apparatus for heat treating semiconductor wafers includes a heating device which comprises an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. The tuning devices adjust the overall irradiance distribution of the light energy sources. The tuning devices can either be active sources of light energy or passive sources which reflect, refract, or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: A lamp house stores twenty-seven flash lamps in such a state that a longitudinal direction of each of the twenty-seven flash lamps extends in a horizontal direction (Y-direction), and that the twenty-seven flash lamps are arranged in parallel to one another at equally spaced intervals in a horizontal direction (X-direction) perpendicular to the longitudinal direction. There is employed such a layout that a direction of substrate loading and unloading by a transport robot is perpendicular to the longitudinal direction of the flash lamps (the longitudinal direction of the lamp house). In this layout, the distance required for the transport robot to transfer a semiconductor wafer by slidingly moving a transport arm can be minimized to permit a compact transport robot, so that a thermal processing apparatus itself is compact and excellent in maintainability.

Abstract: An electric heater has multiple zones, wherein the multiple zones include at least one zone which is subject to high loading (e.g. bottom zone) and, at least one zone is a non-metal heating element, and the rest of the zones (e.g. middle zone and top zone) are metal resistance heating elements of light gauge overbent.

Abstract: A method and apparatus for adjusting exhaust flow, and the apparatus has a programmable exhaust control regulator generating a first input signal to a motor control circuit, an exhaust flow meter generating a second input signal to the motor control circuit and a motor driven control valve moved to different positions according to the first and second input signals, the control valve being installed in an exhaust portion of the hot plate apparatus.

Abstract: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

Abstract: A support structure for supporting a ceramic susceptor in a chamber is provided. The support structure includes a supporting portion joined with a back face of the ceramic susceptor. The supporting portion includes an inner space that is separated from the atmosphere of the chamber. A cooling system is provided below the supporting portion 6. At least one thermal control portion is provided between the cooling system and the supporting portion for reducing thermal conduction from the susceptor to the cooling system.

Abstract: Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.

Abstract: This application discloses a substrate heating apparatus comprising a partition separating the inside of a load-lock chamber into two areas. An inside opening provided in the partition is closed by a partition valve, while the second area in which a substrate is transferred is evacuated at a vacuum pressure by a pumping line. After the partition valve is opened, a carrier carries the substrate through the inside opening, thereby contacting the substrate onto a heat body disposed in the first area. Otherwise, after the partition valve is opened, a carrier carries a heat body through the inside opening, thereby contacting the substrate onto the heat body in the second area. This application also discloses a substrate processing system comprising a transfer chamber, and a load-lock chamber and a process chamber both provided on the periphery of the transfer chamber.

Abstract: A system, apparatus, and method for thermal processing of substrates undergoing lithographic chemical processes is provided. The thermal processing system includes at least one heating element, a heat distributing plate, having a heating surface and being disposed in thermal communication with the at least one heating element. The heat distributing plate is constructed and arranged to distribute heat from the heating element onto the heating surface. A substrate support, supports a substrate at a position above the heating surface and the system includes an actuator that rotates the substrate relative to the heating surface during a heat transfer operation.

Abstract: A heater assembly for an ALD or CVD reactor provides protection for an electrical conductor associated with a heating element by using a purge gas to isolate the conductor from the corrosive environment of the reactor chamber. The purge gas is introduced into a sleeve surrounding the conductor and from there is allowed to leak into the reactor chamber to be pumped out with the process gasses. This arrangement avoids the need for airtight seals at the junction of the sleeve and the heating element easing manufacturing requirements and potentially reducing component costs.

Abstract: Various processes for heating semiconductor wafers is disclosed. In particular, the present invention is directed to configuring light sources emitting light energy onto a wafer in order to optimize absorption of the energy by the wafer. Optimization is carried out by varying the angle of incidence of the light energy contacting the wafer, using multiple wavelengths of light, and configuring the light energy such that it contacts the wafer in a particular polarized state. In one embodiment, the light energy can be emitted by a laser that is scanned over the surface of the wafer.

Abstract: A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

Abstract: A substrate processing apparatus includes a reaction chamber for simultaneously processing a plurality of process substrates, a boat for loading the process substrates into the reaction chamber, and a stocker for storing a multiple number of dummy substrates, at least a portion of the dummy substrates being loaded into the reaction chamber together with the process substrates through the use of the boat. A substrate cleaning process is carried out by loading dummy substrates to be cleaned into the reaction chamber through the use of the boat and introducing a cleaning gas into the reaction chamber.

Abstract: A device for heating plates of glass (3) which are hardened or deformed, includes two ceramic heating plates (1) between which a plate of glass (3) is arranged. Compensation plates (20) are associated with the heating plates (1) at a distance therefrom, in addition to heaters (6) which are arranged close thereto. The heaters (6) are accommodated in housings (11) which are defined on one side of the heating plates (1). Holes (8) are provided in the heating plates (1). Gas is fed through the holes into the housing between the heating plates (1) and the compensating plates (2). The gas is heated by flowing past the compensating plates (20) and forms gas cushions (7) on both sides of the plate of glass (3) which hold the plate. The plate of glass (3) is heated in a homogenous manner by radiation and convection.

Abstract: A light source comprising a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. Thus provided is a thermal processing apparatus using the flash lamps, capable of readily controlling the intensity of irradiation.

Abstract: In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports disposed within the chamber to support at least two substrates thereon; and (3) a heater disposed within the chamber between a sidewall of the chamber and the plurality of substrate supports and having an edge region and a center region. The heater is adapted to produce more heat within the edge region than within the center region of the heater. Numerous other aspects are provided.

Abstract: A taco shell heating apparatus for providing a fast, convenient, oil free way to heat taco shells. The taco shell heating apparatus includes a housing with four slots positioned through a top wall of the housing. Each one of the four slots is for selectively receiving a taco shell. A heating assembly is positioned within the housing. The heating assembly toasts the taco shell when the taco shell is received within the housing. The heating assembly further comprises a plurality of heat reflecting elements, at least one heating element, a timing assembly, and at least one extraction device.

Abstract: A substrate processing apparatus including lift pins for lifting the substrate capable of moving up and down, a heating plate with holes through which the lift pins protrude and sink to a surface facing the substrate, a lid placed above the heating plate capable of moving up and down, a first inert gas introducing mechanism introducing a first inert gas to the inside portion of the lid and a second inert gas introducing mechanism introducing a second inert gas onto the surface of the heating plate through the holes. With such configuration, the inert gas can be introduced to both sides, the front side and the rear side, of the substrate, and oxygen is prevented from being forced to come around to the surface of the substrate from the rear side thereof. As a result, oxidation of the substrate can be prevented effectively.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: The aim of the invention is to enable substrates to be thermally treated in a more homogeneous manner. In order to achieve this, a device is provided for thermally treating substrates, especially semiconductor wafers, comprising at least two adjacent, essentially parallel heating elements which respectively have at least one heating wire. The two adjacent heating elements are embodied in such a way that they are quasi-complementary, at least in parts, in terms of the coiled and uncoiled segments of the heating wires pertaining thereto.

Abstract: An apparatus and method and processing a semiconductor substrate that controls heating of the substrate to thereby control the depth of the junctions formed by impurities implanted in the semiconductor substrate by heating a device side of the semiconductor substrate to a reference temperature and heating the device side of the semiconductor substrate to a heat activation temperature that is greater than the reference temperature for an activation period, which provides sufficient energy to activate the impurities so that they become part of the lattice structure of the substrate while minimizing diffusion of the impurities across the substrate and reducing the temperature gradient in the substrate to minimize stress in the substrate.

Abstract: A method involves increasing a temperature of a workpiece over a first time period to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, the heating commencing within less time following the first time period than the first time period. Another method involves pre-heating the workpiece from an initial temperature to an intermediate temperature, and heating a surface of the workpiece to a desired temperature greater than the intermediate temperature by an amount less than or equal to about one-fifth of a difference between the intermediate and initial temperatures. Another method involves irradiating a first side of the workpiece to pre-heat the workpiece to an intermediate temperature, and irradiating a second side of the workpiece to heat the second side to a desired temperature greater than the intermediate temperature.

Abstract: A method for heating a wafer to a predetermined temperature, the wafer being held by a holding unit and being accommodated in a processing container equipped with a heater. The wafer is heated to a processing temperature while positioning the wafer at an adjacent position that results form making the wafer approach the heating surface of the heater. After heating the wafer to the predetermined temperature, the wafer is separated from the flat bottom surface of the container body to a processing position. In this state, a processing chamber of the processing container is supplied with a processing fluid, while the holding unit and the heater are relatively moved close to and apart from each other intermittently or continuously. Accordingly, it is possible to quickly heat the substrate to a processing temperature while supplying the substrate with the processing fluid uniformly. This improves throughout and the homogenization in processing.

Abstract: A thermal insulator can change a heat insulation characteristic partially with a simple structure. The thermal insulator is divided into a plurality of parts in accordance with a temperature of a heat source which is insulated by the thermal insulator. The plurality of parts are formed of different honeycomb structures, respectively, so as to provide different heat insulation characteristics. The plurality of parts may be formed by different materials, or a shape or dimension such as a cell pitch of the honeycomb structure may be varied. Heat is collected from air within the honeycomb cells, and is transferred to other parts for heating.

Abstract: A browning device for use in a microwave oven. The browning device can include an infrared generator for generating infrared radiation. The browning device being formed such that it has a hollow space. The interior surface of the hollow space facing the microwave oven cavity having an infrared absorbing material for absorbing infrared radiation from an infrared generator. The infrared absorbing material is constructed such that it is able to reach a temperature of 500° C. at which soot is vaporized or ignited. Quartz tubes may be utilized as the infrared generator.

Abstract: A method involves pre-heating a workpiece to an intermediate temperature, heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, and enhancing cooling of the workpiece. Enhancing cooling may involve absorbing radiation thermally emitted by the workpiece. An apparatus includes a first heating source for heating a first surface of a semiconductor wafer, a second heating source for heating a second surface of the semiconductor wafer, and a first cooled window disposed between the first heating source and the semiconductor wafer.

Abstract: A floating substrate reactor allows heat treatment of a series of semiconductor substrates, one by one. The heat treatment occurs while flowing gas suspends a substrate between two heated surfaces of the reactor. The two heated surfaces each have multiple heating zones. The heating zones are heated to desired temperature(s) and a substrate is then loaded into the reactor for heat treatment. Upon loading, the relatively cold substrate absorbs heat and cools the process chamber. A heat spike, which can be varied, is applied to the heating zones to heat the reactor to the desired temperature again. The substrate, however, is unloaded from the reactor before the temperatures of the heating zones have reached the desired temperature. After the heating zones have reached the desired temperature, the next substrate in the series of substrates is loaded into the reactor for heat treatment.

Abstract: Each of a plurality of flash lamps forming a light source is a bar lamp having an elongated cylindrical shape. The ratio of the distance between the flash lamps and a semiconductor wafer to the distance between the flash lamps and a reflector is set to not more than 1.8 or at least 2.2. Consequently, illuminance is weakened on portions of the main surface of the semiconductor wafer located immediately under the flash lamps along the vertical direction and strengthened in portions located immediately under the clearances between adjacent ones of the flash lamps along the vertical direction, thereby reducing illuminance irregularity on the overall main surface of the semiconductor wafer and improving in-plane uniformity of temperature distribution on the semiconductor wafer. Thus, a thermal processing apparatus capable of improving in-plane uniformity of temperature distribution on a substrate is provided.

Abstract: Furnace cart assembly for loading high temperature vacuum furnaces for treating target material, for example, metal parts, under extreme temperature and vacuum environments. The furnace cart includes electrical heating elements as an integral part of the cart, which elements are adapted for releasable connection to the furnace electrical supply. When so connected the furnace cart heating elements can form a part of the heating system of the furnace. The lower part of the furnace cart assembly, including a frame above and supported on wheels, the frame having heat reflection means on at least Its upper surfaces providing some protection from heat is preferably also protected from heat during furnace operation by insulating material above the frame (the material desirably supported by the frame but separated therefrom).

Abstract: A cooking apparatus includes a body provided in a top thereof with an opening, at least one heating unit arranged on both sides of the body, a grill unit mounted on a top of the body, and a heat reflecting unit arranged toward the heating units below the opening of the body. The grill unit includes a plurality of grill pipes that are filled with water, arranged to be regularly spaced apart from each other and configured to form the effective grill portion. The heating unit includes a pair of heating units arranged on both sides of the body toward the opening of the body. The heating unit is arranged to be inclined at an angle ranging from 30° to 90° (preferably, about 70°) with respect to the effective grill portion of the grill unit. The heating unit is a ceramic heater.

Abstract: An exhaust apparatus for evacuating vapor during baking of liquid chemicals deposited on substrates including a heating chamber containing a hot plate for horizontally supporting and heating a substrate. A cover plate is suspended horizontally over the hot plate; the cover plate has a plurality of exhaust ports extending from the top to its bottom surfaces. The ports are radially and evenly disposed midway between the periphery and a centered port with a manifold mounted to the top of the cover plate. The manifold has tubular conduits connected underneath to each exhaust port. Each conduit has an adjustable damper disposed at its front opening for regulating the vapor being exhausted. The tubular conduits converge from each exhaust port towards a common enclosure with an exhaust pipe coupled to its top for exhausting vapor to an external recovery facility.

Abstract: A wafer temperature estimator calibrates contact-type temperature sensor measurements that are used by a temperature controller to control substrate temperature in a high temperature processing chamber. Wafer temperature estimator parameters provide an estimated wafer temperature from contact-type temperature sensor measurements. The estimator parameters are refined using non-contact-type temperature sensor measurements during periods when the substrate temperature is decreasing or the heaters are off. A corresponding temperature control system includes a heater, a contact-type temperature sensor in close proximity to the substrate, and an optical pyrometer placed to read temperature directly from the substrate. A wafer temperature estimator uses the estimator parameters and measurements from the contact-type sensor to determine an estimated wafer temperature. A temperature controller reads the estimated wafer temperature and makes changes to the heater power accordingly.

Abstract: An apparatus for supporting a substrate in a processing system comprising a body and an upper top portion having a surface thereon adapted to minimize friction and/or chemical reactions between the substrate support and a substrate supported thereon.

Abstract: A heat treatment apparatus has a controller (100) provided with a temperature estimator (110) for estimating a temperature of a wafer by detection signals of temperature sensors (Sin, Sout) and a temperature calibrator (120) for correcting the estimated temperature of the wafer. In order to calibrate the temperature, an offset value stored in an offset table (122) is used. The offset value is determined based on the relationship between film-thickness of films formed in an experimental heat treatment process and process temperatures.

Abstract: To increase the temperature homogeneity on the surface of a substrate that is to be thermally treated, a method for thermally treating substrates is provided, according to which the substrate is heated by several separately controllable heating elements. A desired-value profile is predefined for each of said heating elements. The method comprises the following steps: locally-analysed measurement of the temperature of the surface of the substrate that faces away from the heating elements, during the thermal treatment; determination of the temperature inhomogeneities occurring on the substrate surface; definition of new desired-value profiles based on said temperature inhomogeneities; and preparation of the new desired-value profiles for subsequent treatments.

Abstract: An apparatus for supporting a substrate is described that has a ball adapted to minimize damage between the substrate support and the substrate supported thereon. In one embodiment, an apparatus for supporting a substrate includes ball disposed on an inclined ball support surface. The ball support surface is adapted to bias the ball toward one side of the ball support surface thereby providing space for the ball to roll as the substrate supported thereon changes in length when exposed to thermal influences. In another embodiment, the apparatus further comprises a cage adapted to capture the ball to the ball support surface.

Abstract: A vacuum oven for decontaminating items, a system incorporating multiple such vacuum ovens and a method of operating such system are provided. The ovens are portable. They can have a vacuum drawn in them and can be heated by being coupled to a vacuum and a power source, respectively at a first location and then be decoupled from the vacuum and power sources and moved to a second location such as a glove box or clean room while still maintaining a vacuum.

Abstract: A steamer apparatus for steaming bread-type food products includes a housing defining a steam chamber having a heated platen therein. A water conduit delivers water onto the heated platen to convert the water into steam in the steam chamber. The water in the conduit is preheated by the heated platen, itself, prior to delivering the water to the heated platen.

Abstract: A furnace for heat treating of metal parts includes a hot zone enclosure defining a hot zone therein. The hot zone enclosure has a side wall, a first end wall, and a second end wall. The side wall has slots formed therethrough and along the length thereof. The heat treating furnace also includes a system for injecting a cooling gas into the hot zone through the hot zone enclosure. The heat treating furnace further includes a damper arrangement for directing the cooling gas over a selected portion or portions of the workpiece load and through one or more of the slots. In one embodiment of the invention, all actuated components in the furnace are located outside of the hot zone to minimize damage to moving parts that are caused by exposure to extreme heat.

Abstract: An apparatus for heat treatment of a wafer is disclosed. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.