Abstract: An apparatus for repairing a photo mask, including a repairing atomic force microscope configured to repair a defective portion of the photo mask in a photo mask repair process, an electron microscope configured to navigate the repairing atomic electron microscope to the defective portion of the photo mask and to observe the photo mask repair process, and an imaging atomic microscope configured to image in-situ a shape of a repaired photo mask.

Abstract: The invention is directed to an arrangement for the illumination of a substrate with a plurality of individually shaped, controllable particle beams, particularly for electron beam lithography in the semiconductor industry. It is the object of the invention to find a novel possibility for illuminating a substrate with a plurality of individually shaped, controllable particle beamlets which permits a high-resolution structuring of substrates with a high substrate throughput without limiting the flexibility of the applicable structure patterns or limiting the high substrate throughput due to a required flexibility.

Abstract: A deflector array includes a plurality of deflectors, which deflect charged particle beams, arrayed on a substrate. Each of the plurality of deflectors includes a single opening formed in the substrate, and each of the plurality of deflectors includes a pair of electrodes that oppose each other through the opening and are configured to deflect a single charged particle beam. The plurality of deflectors are arrayed such that a length of the pair of electrodes in a longitudinal direction thereof is not less than a distance between centers of two of the plurality of deflectors that are located nearest to each other. The plurality of deflectors is arrayed to form a checkerboard lattice, and two openings of the two of the plurality of deflectors overlap in the longitudinal direction.

Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.

Abstract: The present disclosure provides a maskless lithography apparatus. The apparatus includes a plurality of writing chambers, each including: a wafer stage operable to secure a wafer to be written and a multi-beam module operable to provide multiple radiation beams for writing the wafer; an interface operable to transfer wafers between each of the writing chambers and a track unit for processing an imaging layer to the wafers; and a data path operable to provide a set of circuit pattern data to each of the multiple radiation beams in each of the writing chambers.

Abstract: An electrostatic latent image measuring device includes a charged particle optical system which irradiates an electron beam and charges a photoconductor sample, an exposure optical system which forms an electrostatic latent image on a surface of the photoconductor sample, and a scanning unit which scans the surface of the photoconductor sample by the electron beam, a distribution of the electrostatic latent image on the surface of the sample being measured by a signal detected by the scanning.

Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.

Abstract: In an immersion lithographic apparatus, bubble formation in immersion liquid is reduced or prevented by reducing a gap size or area on a substrate table and/or covering the gap.

Abstract: A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.

Abstract: In a particle attachment preventing method in a substrate processing apparatus, an electron density control power supplied from the second power supply is adjusted such that an electron density above the substrate gets lower than during a plasma processing, for a preset short period of time after the plasma processing is ended, and a bias power supplied from the first power is maintained for the preset short period of time. The second power supply is a high frequency power supply for supplying a high frequency power having a frequency that is higher than that of the bias power, and in said adjusting of the electron density control power, the high frequency power supplied from the second power supply is lowered as compared with that during the plasma processing.

Abstract: The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

Abstract: A pattern density distribution and a dose distribution calculated using the pattern density distribution are multiplied by each other to calculate an exposure distribution. A fogging electron amount distribution is calculated using the exposure distribution and a function descriptive of a fogging spread distribution. Charge amount distributions in irradiation and non-irradiation regions are calculated using the exposure distribution and the fogging electron amount distribution. A position displacement amount distribution is calculated using the charge amount distributions and a response function for converting a charge amount to a position displacement error.

Abstract: Blanking by a blanking control unit is eliminated by making the tangential direction movement velocity of the substrate and the deflection velocity of the beam faster in the segment, in which the recording pattern is sparse, and making and slower in segments, in which it is dense. In this case, in segment in which it is desired to form a recording pattern thicker in the radial direction, a thick recording can be realized by setting the recording velocity by the recording velocity setting means to be slower, and in the case where is substantially constant, setting to be relatively slower, than in the segments.

Abstract: A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

Abstract: A system and method for magnetically filtering an ion beam during an ion implantation into a workpiece is provided, wherein ions are emitted from an ion source and accelerated the ions away from the ion source to form an ion beam. The ion beam is mass analyzed by a mass analyzer, wherein ions are selected. The ion beam is then decelerated via a decelerator once the ion beam is mass-analyzed, and the ion beam is further magnetically filtered the ion beam downstream of the deceleration. The magnetic filtering is provided by a quadrapole magnetic energy filter, wherein a magnetic field is formed for intercepting the ions in the ion beam exiting the decelerator to selectively filter undesirable ions and fast neutrals.

Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Abstract: A processing system includes a particle beam column for generating a particle beam directed to a first processing location; a laser system for generating a laser beam directed to a second processing location located at a distance from the first processing location; and a protector including an actuator and a plate connected to the actuator. The actuator is configured to move the plate between a first position in which it protects a component of the particle beam column from particles released from the object by the laser beam and a second position in which the component of the particle beam column is not protected from particles released from the object by the laser beam.

Abstract: For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.

Abstract: Methods and systems are provided for the soft desorption of analyte from a sample, in which an optical beam absorbed within an irradiate zone of the sample causes vibrational excitations of a component within the sample. The optical beam, providing sufficient energy to superheat the component, is provided for a time interval that is less than the time duration required for the loss of energy out of the irradiated zone due to thermal diffusion and acoustic expansion. The superheated component thus drives ablation within the irradiated zone, resulting in the soft desorption of analyte without ionization and fragmentation. The ejected ablation plume may be directed towards the inlet of a mass analysis device for detection of the desorbed analyte, which is preferably ionized by a linear resonant photo-ionization step.

Abstract: A charged particle optical system comprising a beamlet generator for generating a plurality of beamlets of charged particles and an electrostatic deflector for deflecting the beamlets. The electrostatic deflector comprises first and second electrodes adapted for connection to a voltage for generating an electric field between the electrodes for deflection of the beamlets, the electrodes being at least partially freestanding in an active area of the electrostatic deflector. The electrodes define at least one passing window for passage of at least a portion of the beamlets between the electrodes, the passing window having a length in a first direction and a width in a transverse direction. The system is adapted to arrange the beamlets in at least one row and to direct a single row of the beamlets through the passing window of the electrostatic deflector, the beamlets of the row extending in the first direction.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: Charged particles that are in transit through a deflection system when the beam is repositioned do not received the correct deflection force and are misdirected. By independently applying signals to the multiple stages of a deflection system, the number of misdirected particles during a pixel change is reduced.

Abstract: Nanofabrication installation comprising: a specimen holder, for holding a specimen; a mask, having a through-opening between the upper and lower faces of the mask, for letting charged particles through onto the specimen holder; a near-field detection device for detecting a relative position between the mask (8) and the specimen holder (3); and a displacement device for generating a relative movement between the mask (8) and the specimen holder (3) independently of the relative position between the source (1) and the mask (8), the mask including at least a first electrode in the through-opening (10).

Abstract: A masking apparatus includes a mask positioned upstream of a target positioned for treatment with ions. The mask is sized relative to the target to cause a first half of the target to be treated with a selective treatment of ions through the mask and a second half of the target to be treated with a blanket treatment of ions unimpeded by the mask during a first time interval. The masking apparatus also includes a positioning mechanism to change a relative position of the mask and the target so that the second half of the target is treated with the selective treatment of ions and the first half of the target is treated with the blanket implant during a second time interval. An ion implanter having the masking apparatus is also provided.

Abstract: A method for measuring three-dimensional devices in a wafer comprises the step of obtaining a plurality of cross-sectional images of a corresponding plurality of three-dimensional devices in the wafer. The plurality of three-dimensional devices have essentially identical geometries. Each cross-sectional image is obtained from a plane in the corresponding three-dimensional device at a predetermined distance from a fiducial mark thereof. The predetermined distance is different for each of the plurality of cross-sectional images. The method further comprises the step of determining the geometries of the plurality of three-dimensional devices based on the cross-sectional images thereof.

Abstract: An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.

Abstract: A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.

Abstract: The present invention relates to a method of cleaning and after treatment of optical surfaces in an irradiation unit, said irradiation unit comprising a radiation source (1, 31) emitting EUV-radiation and/or soft X-rays, a first volume (40) following said radiation source (1, 31) and containing first optical components (3, 33) with said optical surfaces, and a second volume (41) following said first volume (40) and containing second optical components (38). The method comprises at least one cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces, thereby forming volatile compounds with contaminations deposited on said optical surfaces, wherein said compounds are pumped out of the first volume (40) together with the first gas or gas mixture.

Abstract: A method and equipment which includes an illustrated-spot illumination-distribution data table for storing an illumination distribution within an illustrated spot and which calculates a coordinate position for a particle or a defect and the diameter of the particle on the basis of detection light intensity data about the particle or defect and the illustrated-spot illumination-distribution data table. Thus, even when the illumination distribution within the illustrated spot based on an actual illumination optical system is not a Gaussian distribution, the calculation of the particle diameter of the detected particle or defect and the calculation of a coordinate position on the surface of an object to be inspected can be attained with an increased accuracy.

Abstract: A system and method for removing an organic residue from a charged particle beam system includes a conduit that is coupled to the column and is for adding oxygen to the column. A heater is coupled to the column and is for increasing the temperature in the column. A pump is coupled to the column and is for removing a gas from the chamber, wherein the gas is a byproduct of a chemical reaction of the organic residue and the oxygen.

Abstract: A lithographic apparatus includes an illumination system configured to transmit a beam of radiation, the beam of radiation comprising desired radiation having a predetermined wavelength or a predetermined wavelength range, and undesired radiation having another wavelength or another wavelength range; a support structure configured to support a patterning structure, the patterning structure being configured to impart the beam of radiation with a pattern in its cross-section; a substrate table configured to hold a substrate; and a projection system configured to project the patterned beam of radiation onto a target portion of the substrate; wherein at least part of the lithographic apparatus, in use, includes a gas substantially transmissive for at least part of the desired radiation and substantially less transmissive for at least part of the undesired radiation.

Abstract: One embodiment relates to a method of controllably reflecting electrons from an array of electron reflectors. An incident electron beam is formed from an electron source, and the incident beam is directed to the array of electron reflectors. A first plurality of the reflectors is configured to reflect electrons in a first reflective mode such that the reflected electrons exiting the reflector form a focused beam. A second plurality of the reflectors is configured to reflect electrons in a second reflective mode such that the reflected electrons exiting the reflector are defocused. Another embodiment relates to an apparatus of a dynamic pattern generator for reflection electron beam lithography. Other embodiments, aspects and features are also disclosed.

Abstract: A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets.

Abstract: An ion-cut machine and method for slicing silicon ingots into thin wafers for solar cell manufacturing is set forth, amongst other embodiments and applications. One embodiment comprises two carousels: first carousel (100) adapted for circulating workpieces (55) under ion beam (10) inside target vacuum chamber (30) while second carousel (80) is adapted for carrying implanted workpieces through a sequence of process stations that may include annealing (60), cleaving (70), slice output (42), ingot replacement (52), handle bonding, cleaning, etching and others. Workpieces are essentially swapped between carousels. In one embodiment, the swapping system comprises a high throughput load lock (200) disposed in the wall of the vacuum chamber (30), a vacuum swapper (110) swapping workpieces between first carousel (100) and load lock (200), and an atmospheric swapper (90) swapping workpieces between load lock (200) and second carousel (80).

Abstract: A charged particle beam writing apparatus includes a unit emitting a charged particle beam, a stage on which a target workpiece to be written is placed, a unit correcting a reference position of a small region in a writing region, based on a pattern distortion obtained from positions of figures spread over substantially all writing region of a dummy target workpiece and written without correcting, a first deflector deflecting the beam, based on a corrected reference position obtained by correcting the reference position, a correction unit correcting a relative distance from the corrected reference position to an arbitrary position in the small region, based on a pattern distortion of the dummy, by using the reference position and a coefficient of a correction equation for correcting the reference position, and a second deflector further deflecting the beam from a position deflected by the first deflector, based on the relative distance corrected.

Abstract: A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.

Abstract: The invention is a method, triggering unit, and system for activating an oxygen scavenging composition at high speeds. The triggering unit includes a plurality of UV lamps that can operate at increased temperatures and have high output intensites from about 10 to 35 mW/cm2. The triggering unit can activate films at speeds from about 20 to 100 fps. Mercury amalgam lamps are useful in the practice of the invention. The invention also includes a UV dose management system and film tensioning system that facilitates triggering at high film speeds. The UV dose management system controls the amount of UV exposure that the film receives so that the oxygen scavenging rate of the activated composition can be controlled.

Abstract: A writing apparatus includes a storage unit configured to store writing data, an acquiring unit configured to acquire information on a pattern defined based on the writing data, a selecting unit configured to select a format of a plurality of formats having different number of bits to be used, based on acquired information on the pattern, for each predetermined region, a converting unit configured to convert data in the predetermined region defined by the writing data, by using a selected format, and a writing unit configured to write a predetermined pattern on a target workpiece, based on converted data in the predetermined region.

Abstract: The present invention provides a method of cleaning optical surfaces in an irradiation unit in order to remove contaminations deposited on said optical surfaces. The method includes a cleaning step in which a first gas or gas mixture is brought into contact with said optical surfaces thereby forming a volatile compound with a first portion of said contaminations. In an operation pause of the irradiation unit prior to the cleaning step, a pretreatment step is performed, in which a second gas or gas mixture is brought into contact with said optical surfaces. Said second gas or gas mixture is selected to react with a second portion of said contaminations different from said first portion to form a reaction product, which is able to form a volatile compound with said first gas or gas mixture.

Abstract: An extreme ultraviolet (EUV) light source device and foil trap, the device including a vessel; an EUV radiating species supply means that feeds an extreme ultraviolet radiating species into the vessel; a discharge part with discharge electrodes that heat and excite the EUV radiating species and generate a high-temperature plasma; a collector mirror collecting EUV radiation emitted from the plasma; the foil trap installed between the discharge part and the mirror; an extractor part extracting the collected radiation; and an evacuation means exhausting and regulating pressure within the vessel. The foil trap includes foils extending radially from a main axis thereof to capture debris from the light source, while allowing the emitted radiation to pass through a region thereof to the mirror. A length of at least part of the foils in directions parallel to the main axis is shorter in positions close to the main axis than distant therefrom.

Abstract: A charged particle beam writing apparatus includes a stage on which a target object is placed; an emitting unit configured to emit a charged particle beam to the stage side; a blocking unit arranged between the emitting unit and the stage and configured to block the charged particle beam emitted; a deflector having electrodes through which a current flows by applying a voltage and configured to deflect the charged particle beam passing between the electrodes onto the blocking unit by applying a predetermined voltage across the electrodes; an optical axis adjusting unit configured to correct optical axis deviation of the charged particle beam generated by continuously repeating irradiation (beam-ON) of the charged particle beam on a target object and blocking (beam-OFF) of the beam by applying a two-step voltage to the deflector; and a control unit configured to control the optical axis adjusting unit such that an amount of the optical axis deviation is corrected.

Abstract: The invention relates to methods to improve SLMs, in particular to reflecting micromechanical SLMs, for applications with simple system architecture, high precision, high power handling capability, high throughput, and/or high optical processing capability. Applications include optical data processing, image projection, lithography, image enhancement, holography, optical metrology, coherence and wavefront control, and adaptive optics. A particular aspect of the invention is the achromatization of diffractive SLMs so they can be used with multiple wavelengths sequentially, simultaneously or as a result of spectral broadening in very short pulses.

Abstract: The present invention relates, in general, to a deflector for microcolumns for generating electron beams, and, more particularly, to a deflector capable of scanning or shifting electron beams or functioning as a stigmator using a magnetic field. The deflector (100) according to the present invention includes one or more deflector electrodes. Each of the deflector electrodes includes a core (12) made of a conductor or a semiconductor, and a coil (11) wound around the core (12).

Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Abstract: A debris mitigation system for trapping contaminant material coming from a debris-generating radiation source. The system includes a contamination barrier constructed and arranged to rotate about an axis, and a magnet structure constructed and arranged to provide a magnetic field for deflecting charged debris from the radiation source. The magnet structure is constructed and arranged to provide a magnetic field through the contamination barrier. The magnetic field, when passing through the contamination barrier, is oriented along planes generally coinciding with the axis of rotation of the contamination barrier.

Abstract: Provided is a mask inspection apparatus including: emitting unit for emitting electron beams onto a sample; electron detecting unit for detecting the quantity of electrons produced, by the emission of the electron beams, from the sample with patterns formed thereon; image processing unit for generating image data for the patterns on the basis of the electron quantity; and controlling unit for controlling the emitting unit, the electron detecting unit, and the image processing unit. The controlling unit calculates, from the size of a designated observation area of the sample, a division number of divisional images that are synthesized to form a joint image that covers the entire designated observation area. The controlling unit determines divisional areas so that adjacent divisional areas partially overlap each other. The controlling unit acquires SEM images for the respective divisional areas.

Abstract: An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

Abstract: An electron gun includes a cathode, a bias electrode, and an anode disposed along a common axis in order thereof. In the electron gun, an electron emitting surface of the cathode has such a shape that brightness of a crossover is more uniform than that in a case that both a first region including a point on the axis and a second region located outside the first region have a first radius of curvature.

Abstract: An ion implantation system, method, and apparatus for abating condensation in a cold ion implant is provided. An ion implantation apparatus is configured to provide ions to a workpiece positioned in a process chamber. A sub-ambient temperature chuck supports the workpiece during an exposure of the workpiece to the plurality of ions. The sub-ambient temperature chuck is further configured to cool the workpiece to a processing temperature, wherein the process temperature is below a dew point of an external environment. A load lock chamber isolates a process environment of the process chamber from the external environment. A light source provides a predetermined wavelength of electromagnetic radiation to the workpiece concurrent with the workpiece residing within the load lock chamber, wherein the predetermined wavelength or range of wavelengths is associated with a maximum radiant energy absorption range of the workpiece, wherein the light source is configured to selectively heat the workpiece.

Abstract: One embodiment disclosed relates to an apparatus for reflection electron beam lithography. The apparatus includes an electron source, a patterned electron reflector generator structure, a stage, a demagnifying electron lens, and an ExB separator. The ExB separator configured to bend a trajectory of the electron beam towards the dynamic pattern generator structure. The patterned electron reflector structure is configured to reflect select portions of the electron beam so as to form a patterned electron beam. The ExB separator is further configured to allow the patterned electron beam to pass straight through towards the demagnifying electron lens. The demagnifying electron lens is configured to demagnify the patterned electron beam and project the demagnified patterned electron beam onto the target substrate. The apparatus disclosed herein has a straight projection axis and substantially reduces the electron beam path by a factor of three-to-one (compared to a prior apparatus which uses a magnetic prism).