Etching Or Brightening Compositions Patents (Class 252/79.1)
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Publication number: 20140187043Abstract: A non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate is polished at a high polishing rate, whereby a smooth surface is obtained. There is provided a polishing agent containing: an oxidant that contains a transition metal and has a redox potential of 0.5 V or more; silica particles that have an average secondary particle size of 0.2 ?m or less; and a dispersion medium, wherein a content ratio of the oxidant is not less than 0.25 mass % nor more than 5 mass %, and a content ratio of the silica particles is not less than 0.01 mass % and less than 20 mass %.Type: ApplicationFiled: March 5, 2014Publication date: July 3, 2014Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Satoshi TAKEMIYA, Hiroyuki TOMONAGA
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Patent number: 8758634Abstract: Disclosed is a composition for and applying said method for micro etching of copper or copper alloys during manufacture of printed circuit boards. Said composition comprises a copper salt, a source of halide ions, a buffer system and a benzothiazole compound as an etch refiner. The inventive composition and method is especially useful for manufacture of printed circuit boards having structural features of ?100 ?m.Type: GrantFiled: May 26, 2010Date of Patent: June 24, 2014Assignee: Atotech Deutschland GmbHInventors: Dirk Tews, Christian Sparing, Martin Thoms
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Patent number: 8759216Abstract: The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.Type: GrantFiled: June 7, 2006Date of Patent: June 24, 2014Assignee: Cabot Microelectronics CorporationInventors: Jeffrey Dysard, Sriram Anjur, Timothy Johns, Zhan Chen
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Publication number: 20140170852Abstract: A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material with 0.Type: ApplicationFiled: July 30, 2012Publication date: June 19, 2014Applicant: BASF SEInventor: Ning Gao
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Publication number: 20140166613Abstract: The present invention relates to compositions which are particularly suitable for the etching and structuring of transparent, conductive antireflection coatings and of corresponding stacked layers, which are preferably present in touch-sensitive display screens or display elements. The latter are generally also known as touch-sensitive displays, touch panels or touch screens. In particular, these are compositions by means of which fine structures can be etched selectively into conductive transparent oxidic layers and into corresponding layer stacks.Type: ApplicationFiled: June 19, 2012Publication date: June 19, 2014Applicant: MERCK PATENT GMBHInventors: Oliver Doll, Ingo Koehler, Christian Matuschek, Werner Stockum
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Patent number: 8753528Abstract: The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.Type: GrantFiled: February 4, 2013Date of Patent: June 17, 2014Assignees: International Business Machines Corporation, S.O.I.TEC Silicon on Insulator TechnologiesInventors: Stephen W. Bedell, Keith E. Fogel, Nicolas Daval
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Patent number: 8747687Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.Type: GrantFiled: April 19, 2010Date of Patent: June 10, 2014Assignee: BASF SEInventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Yuzhuo Li, Mario Brands, Yongqing Lan
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Patent number: 8747693Abstract: A silica having metal ions absorbed thereon and a fabricating method thereof are provided. The silica having metal ions absorbed thereon is a silica having metal ions absorbed thereon and being modified with persulfate salt. The method includes following steps. A solution is provided, and the solution includes silica and persulfate salt therein. The solution is heated to react the silica with the persulfate salt, so as to obtain silica modified with persulfate salt. Metal ion source is added in the solution, the metal ion source dissociates metal ions, and the silica modified with persulfate salt absorbs the metal ions to obtain the silica having metal ions absorbed thereon.Type: GrantFiled: September 13, 2012Date of Patent: June 10, 2014Assignee: UWIZ Technology Co., Ltd.Inventors: Yun-Lung Ho, Song-Yuan Chang, Ming-Hui Lu, Chung-Wei Chiang
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Publication number: 20140154884Abstract: The present invention provides an erosion inhibitor for chemical mechanical polishing, which contains compound (a) having a molecular weight of not more than 100,000 and not less than 4 hydroxyl groups, and compound (b) having not less than 4 amino groups, and which has a mass ratio of the compound (a) and the compound (b) (the compound (a)/the compound (b)) of 0.10-500.Type: ApplicationFiled: May 23, 2012Publication date: June 5, 2014Applicant: KURARAY CO., LTD.Inventors: Mitsuru Kato, Minori Takegoshi, Chihiro Okamoto, Shinya Kato
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Publication number: 20140151329Abstract: A foam acid glass etching media including a solvent; a source of fluorine; and a nonionic surfactant. The foam acid is in the form of a colloidal dispersion with a gas dispersed in a continuous liquid phase. The media is useful in etching or polishing glass sheets in a batch or continuous process. Described is a method for etching or polishing glass by providing a glass having at least one major surface; and contacting the at least one major surface with a foam acid.Type: ApplicationFiled: October 28, 2013Publication date: June 5, 2014Applicant: CORNING INCORPORATEDInventors: John Martin Dafin, Todd Michael Harvey, Felipe Miguel Joos, Vasudha Ravichandran, Kevin William Uhlig, Kathleen Ann Wexell, Christine Coulter Wolcott
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Patent number: 8741008Abstract: A chemical mechanical polishing aqueous dispersion includes (A) a graft polymer that includes an anionic functional group in a trunk polymer, and (B) abrasive grains.Type: GrantFiled: December 18, 2008Date of Patent: June 3, 2014Assignee: JSR CorporationInventors: Masayuki Motonari, Eiichirou Kunitani, Tomikazu Ueno, Takahiro Iijima, Takashi Matsuda
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Patent number: 8735293Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising water; 1 to 40 wt % colloidal silica abrasive particles having an average particle size of ?50 nm; and 0 to 5 wt % quarternary ammonium compound; wherein the chemical mechanical polishing composition is oxidizer free and chelating agent free; and, wherein the chemical mechanical polishing composition has a pH >6 to 12.Type: GrantFiled: November 5, 2008Date of Patent: May 27, 2014Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventor: Zhendong Liu
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Patent number: 8734665Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.Type: GrantFiled: October 12, 2011Date of Patent: May 27, 2014Assignee: International Business Machines CorporationInventors: Graham M. Bates, Michael T. Brigham, Joseph K. Comeau, Jason P. Ritter, Eva A. Shah, Matthew T. Tiersch, Eric J. White
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Publication number: 20140141612Abstract: The polishing composition of the present invention contains an oxidizing agent and a scratch-reducing agent represented by general formula (1) or (2) below. In the formulas, X1 and X2 are each independently a hydrogen atom, a hydroxyl group, a carboxyl group, a phosphate group, an alkyl group, an aryl group, an alkyl polyamine group, an alkyl polyphosphate group, an alkyl polycarboxylate group, an alkyl polyaminopolyphosphate group, or an alkyl polyaminopolycarboxylate group.Type: ApplicationFiled: March 28, 2012Publication date: May 22, 2014Inventors: Anne Miller, Chiaki Saito, Kanako Fukuda
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Patent number: 8728341Abstract: A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water. The method for polishing a substrate of the invention comprises a step of polishing the silicon oxide film 1 (film to be polished), formed on the silicon substrate 2 having the silicon oxide film 1, by relatively moving the silicon substrate 2 and a polishing platen, in a state that the silicon oxide film 1 is pressed against a polishing pad on the polishing platen, while supplying the polishing agent of the invention between the silicon oxide film 1 and the polishing pad.Type: GrantFiled: September 14, 2010Date of Patent: May 20, 2014Assignee: Hitachi Chemical Company, Ltd.Inventors: Daisuke Ryuzaki, Takenori Narita, Yousuke Hoshi, Tomohiro Iwano
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Publication number: 20140131615Abstract: The present invention relates to an etching solution for copper or a compound comprised mainly of copper, wherein the etching solution contains (A) a maleic acid ion source and (B) a copper ion source, and an etching method using the etching solution.Type: ApplicationFiled: June 28, 2012Publication date: May 15, 2014Applicant: MITSUBISHI GAS CHEMICAL COMPANY, INC.Inventors: Satoshi Tamai, Kunio Yube, Satoshi Okabe
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Publication number: 20140134778Abstract: An aqueous alkaline composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03)nXn+(I), R—P032-(Xn+)3-n(II); (RO—S03-)nXn+(III), RO—P032-(Xn+)3-n (IV), and [(RO)2P02-]nXn+(V); wherein the n=1 or 2; X is hydrogen, ammonium, or alkaline or alkaline-earth metal; the variable R1 is an olefmically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; and (C) a buffer system, wherein at least one component other than water is volatile; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.Type: ApplicationFiled: July 12, 2012Publication date: May 15, 2014Applicant: BASF SEInventor: Berthold Ferstl
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Patent number: 8721909Abstract: A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers.Type: GrantFiled: October 19, 2012Date of Patent: May 13, 2014Assignee: Fujimi IncorporatedInventor: Yasuhide Uemura
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Patent number: 8721917Abstract: Improved slurry compositions comprising a mixture of a first type of particles and a second type of abrasive particles dispersed within an aqueous medium, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes, particularly abrasive slurry compositions for polishing of sapphire. These abrasive slurry compositions comprise a mixture of a first type of abrasive particles having a hardness that is harder than the surface being polished and a second type of abrasive particles have a hardness that is softer than the surface being polished, particularly mixtures of silicon carbide abrasive particles and silica abrasive particles, dispersed within an aqueous medium.Type: GrantFiled: October 3, 2008Date of Patent: May 13, 2014Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Isaac K. Cherian, Abhaya K. Bakshi
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Publication number: 20140127907Abstract: Methods of forming a semiconductor device structure and sulfur dioxide etch chemistries. The methods and chemistries, which may be plasma chemistries, include use of sulfur dioxide and a halogen-based compound to form a trimmed pattern of a patterning material, such as a resist material, at a critical dimension with low feature width roughness, with low space width roughness, without excessive height loss, and without substantial irregularities in the elevational profile, as compared to trimmed features formed using conventional chemistries and trimming methods.Type: ApplicationFiled: November 8, 2012Publication date: May 8, 2014Applicant: MICRON TECHNOLOGY, INC.Inventor: Guangjun Yang
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Patent number: 8715524Abstract: The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion inhibiting agent; and a colloidal silica, wherein the pH of the polishing liquid is in the range of 2.5 to 5.0. According to the invention, a polishing liquid capable of achieving a superior barrier layer polishing rate, as well as suppressing the occurrence of scratching due to the agglomeration of solid abrasive grains can be provided.Type: GrantFiled: February 25, 2008Date of Patent: May 6, 2014Assignee: FUJIFILM CorporationInventors: Tetsuya Kamimura, Toshiyuki Saie, Masaru Yoshikawa
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Publication number: 20140121145Abstract: A process for treatment of shaped bodies comprising copper, wherein an aqueous mixture (M) comprising (a.) chlorine-free acids without carboxyl groups, (b.) oxidizing agents, (c.) aqueous solvent and optionally additional additives is contacted with the shaped body. Another characteristic feature of the process is that the aqueous mixture (M) after the etching or pickling additionally comprises (e.) dissolved copper and is separated from the solid. Also encompassed is a process for workup of the aqueous mixture (M) which has been separated and additionally comprises dissolved copper by electrolysis. Further provided are mixtures (MI) comprising (a.) from 10 to 40% by weight of methanesulfonic acid, (b.) from 10 to 20% by weight of hydrogen peroxide and (c.) from 40 to 80% by weight of water, and the use thereof for etching or pickling of shaped bodies comprising copper.Type: ApplicationFiled: October 21, 2013Publication date: May 1, 2014Applicant: BASF SEInventors: Thomas Paasche, Henning Urch
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Patent number: 8709278Abstract: A polishing composition that allows polishing speed to be increased and surface roughness to be reduced is provided. The polishing composition according to the present invention includes a compound including at least an oxyethylene group or an oxypropylene group in a block polyether represented by the following general formula (1), a basic compound, and abrasives: >N—R—N< (1) where R represents an alkylene group expressed as CnH2n and “n” is an integer not less than 1.Type: GrantFiled: July 13, 2009Date of Patent: April 29, 2014Assignee: Nitta Haas IncorporatedInventors: Takayuki Matsushita, Noriaki Sugita
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Patent number: 8709277Abstract: This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.Type: GrantFiled: March 14, 2013Date of Patent: April 29, 2014Assignees: FUJIFILM Corporation, Fujifilm Electronic Materials U.S.A., Inc.Inventors: Kazutaka Takahashi, Atsushi Mizutani, Tomonori Takahashi
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Publication number: 20140110626Abstract: Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.Type: ApplicationFiled: September 18, 2013Publication date: April 24, 2014Applicant: AIR PRODUCTS AND CHEMICALS INC.Inventors: Xiaobo Shi, John Edward Quincy Hughes, Hongjun Zhou, Daniel Hernandez Castillo, II, Jae Ouk Choo, James Allen Schlueter, Jo-Ann Teresa Schwartz, Laura Ledenbach, Steven Charles Winchester, Saifi Usmani, John Anthony Marsella
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Patent number: 8703007Abstract: A polishing composition of the present invention contains an oxidant, an anticorrosive, and a surfactant comprising a compound represented by Chemical Formula 1: One to three of R1 to R5 in Chemical Formula 1 are alkyl groups, alkynyl groups, alkenyl groups, aryl groups, or arylalkylene groups, one is a hydrogen atom or an alkyl group having 1 to 9 carbon atoms, and the remainder are hydrogen atoms. O—R6 is oxyethylene, oxypropylene, or a random or block conjugate of oxyethylene and oxypropylene. n is an integer of 1 or more. X is an OSO3? group, an OPO32? group, or an OH group.Type: GrantFiled: January 20, 2011Date of Patent: April 22, 2014Assignee: Fujimi IncorporatedInventors: Tomohiko Akatsuka, Yasuto Ishida, Kanako Fukuda, Yoshihiro Kachi, Hisanori Tansho
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Patent number: 8703005Abstract: A method for removing a plurality of dielectric materials from a supporting substrate by providing a substrate with a plurality of materials, contacting the substrate at a first temperature with a solution to more quickly remove a first dielectric material than a second dielectric material at the first temperature, and then contacting the substrate at a second temperature with a solution to more quickly remove the second dielectric material than the first dielectric material at the second temperature. Thus, the dielectric materials exhibit different etch rates when etched at the first and second temperatures. The solutions to which the first and second dielectric materials are exposed may contain phosphoric acid. The first dielectric material may be silicon nitride and the second dielectric material may be silicon oxide. Under these conditions, the first temperature may be about 175° C., and the second temperature may be about 155° C.Type: GrantFiled: July 17, 2012Date of Patent: April 22, 2014Assignee: Micron Technology, Inc.Inventors: Li Li, Don L. Yates
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Publication number: 20140103251Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.Type: ApplicationFiled: December 27, 2013Publication date: April 17, 2014Applicant: Micron Technology, Inc.Inventor: Donald L. Yates
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Publication number: 20140106566Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.Type: ApplicationFiled: January 6, 2014Publication date: April 17, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chu LIU, Kuei-Shun Chen, Shang-Wern Chang, Chih-Yang Yeh
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Publication number: 20140103250Abstract: The invention provides a chemical-mechanical polishing composition comprising coated ?-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical polishing composition comprising an abrasive having a negative zeta potential in the polishing composition, an organic carboxylic acid, at least one alkyls disulfonate surfactant, and water, wherein the polishing composition does not further comprise a heterocyclic compound. The abrasive is colloidally stable in the polishing composition. The invention further provides methods of polishing a substrate with the aforesaid polishing compositions.Type: ApplicationFiled: December 18, 2013Publication date: April 17, 2014Inventors: Ji CUI, Steven GRUMBINE, Glenn WHITENER, Chih-An LIN
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Patent number: 8697577Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low dishing and erosion levels during CMP processing.Type: GrantFiled: July 30, 2012Date of Patent: April 15, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, Bentley J. Palmer, Rebecca A. Sawayda
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Patent number: 8696929Abstract: A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.Type: GrantFiled: June 6, 2007Date of Patent: April 15, 2014Assignee: Hitachi Chemical Co., Ltd.Inventors: Yasushi Kurata, Katsuyuki Masuda, Hiroshi Ono, Yasuo Kamigata, Kazuhiro Enomoto
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Patent number: 8697576Abstract: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.Type: GrantFiled: December 17, 2010Date of Patent: April 15, 2014Assignee: Cabot Microelectronics CorporationInventors: Brian Reiss, Timothy Johns, Michael White, Lamon Jones, John Clark
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Publication number: 20140099790Abstract: Chemical-mechanical polishing (CMP) compositions containing chemical additives and methods of using the CMP compositions are disclosed. The CMP composition comprises abrasive; chemical additive; liquid carrier; optionally an oxidizing agent; a pH buffering agent and salt; a surfactant and a biocide. The CMP compositions and the methods provide enhanced removing rate for “SiC”, SiN” and “SiCxNy” films; and tunable removal selectivity for “SiC” in reference to SiO2, “SiN” in reference to SiO2, “SiC” in reference to “SiN”, or “SiCxNy” in reference to SiO2; wherein x ranges from 0.1 wt % to 55 wt %, y ranges from 0.1 wt % to 32 wt %.Type: ApplicationFiled: March 15, 2013Publication date: April 10, 2014Applicant: Air Products and Chemicals, Inc.Inventors: Xiaobo Shi, James Allen Schlueter, Maitland Gary Graham, Savka I. Stoeva, James Matthew Henry
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Patent number: 8691019Abstract: A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface.Type: GrantFiled: October 14, 2011Date of Patent: April 8, 2014Assignee: Beijing Tongmei Xtal Technology Co., Ltd.Inventors: Diansheng Ren, Qinghui Liu
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Publication number: 20140094033Abstract: A polishing composition of the present invention contains a water-soluble polymer having a hydrophilic group, and abrasive grains. A hydrophobic silicon-containing part after being polished with the polishing composition has a water contact angle lower than that of the hydrophobic silicon-containing part after being polished with another composition having the same makeup as the polishing composition except that the water-soluble polymer is not contained therein. Examples of the water-soluble polymer include polysaccharides and alcohol compounds. Another polishing composition of the present invention contains abrasive grains having a silanol group, and a water-soluble polymer. When this polishing composition is left to stand for one day in an environment at a temperature of 25° C., the water-soluble polymer is adsorbed on the abrasive grains at 5,000 or more molecules per 1 ?m2 of surface area of the abrasive grains.Type: ApplicationFiled: May 31, 2012Publication date: April 3, 2014Inventors: Yasuyuki Yamato, Youhei Takahashi, Tomohiko Akatsuka
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Publication number: 20140091052Abstract: Technical Problem The present invention aims to provide an iodine-based etching solution having a high ratio of etching rate of a palladium material to that of a metal material other than the palladium material, in particular, an iodine-based etching solution capable of relatively decreasing the concentration of an organic solvent in the etching solution. Solution to Problem The iodine-based etching solution of the present invention is an iodine-based etching solution to etch a material in which a palladium material and a metal material other than the palladium material coexist, and comprises a water-compatible organic solvent and a water-soluble polymer compound.Type: ApplicationFiled: September 27, 2013Publication date: April 3, 2014Applicant: Kanto Kagaku Kabushiki KaishaInventors: Kazuaki Nagashima, Hideki Takahashi
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Publication number: 20140094032Abstract: A polishing agent for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate with a high polishing rate to obtain a smooth surface is provided. This polishing agent comprises an oxidant having redox potential of 0.5 V or more and containing a transition metal, silicon oxide particles, cerium oxide particles and a dispersion medium, in which a mass ratio of the silicon oxide particles to the cerium oxide particles is from 0.2 to 20.Type: ApplicationFiled: December 3, 2013Publication date: April 3, 2014Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Iori YOSHIDA, Satoshi TAKEMIYA, Hiroyuki TOMONAGA
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Patent number: 8685272Abstract: A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.Type: GrantFiled: August 7, 2009Date of Patent: April 1, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Go-Un Kim, Hyo-San Lee, Myung-Kook Park, Ho-Seok Yang, Jeong-Nam Han, Chang-Ki Hong
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Patent number: 8684793Abstract: A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.Type: GrantFiled: May 6, 2010Date of Patent: April 1, 2014Assignee: BASF SEInventors: Yuzhuo Li, Karpagavalli Ramji
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Patent number: 8685857Abstract: There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 ?m, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 ?m, and a surfactant having a hydrophilic moiety.Type: GrantFiled: October 24, 2008Date of Patent: April 1, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Yukiteru Matsui, Gaku Minamihaba, Yoshikuni Tateyama, Hiroyuki Yano, Atsushi Shigeta
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Patent number: 8679980Abstract: (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.Type: GrantFiled: April 19, 2010Date of Patent: March 25, 2014Assignee: BASF SEInventors: Vijay Immanuel Raman, Ilshat Gubaydullin, Yuzhuo Li, Mario Brands, Yongqing Lan
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Publication number: 20140077126Abstract: Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of C4F8 and/or C4F6, an oxygen source, and a carrier gas in combination with tetrafluoroethane (C2F4) or a halofluorocarbon analogue of C2F4.Type: ApplicationFiled: November 20, 2013Publication date: March 20, 2014Applicant: Micron Technology, Inc.Inventors: Russell A. Benson, Theodore M. Taylor, Mark W. Kiehlbauch
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Publication number: 20140073140Abstract: This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.Type: ApplicationFiled: March 14, 2013Publication date: March 13, 2014Applicants: Fujifilm Corporation, Fujifilm Electronic Materials U.S.A., Inc.Inventors: Kazutaka Takahashi, Atsushi Mizutani, Tomonori Takahashi
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Publication number: 20140073707Abstract: Compositions comprising a fluorosurtactant and a fluoro-free hydrotrope are disclosed. The fluoro-free hydrotropes are cationic aromatic compounds, anionic aromatic compounds, or water soluble azo derivatives.Type: ApplicationFiled: September 13, 2012Publication date: March 13, 2014Applicant: E I DU PONT DE NEMOURS AND COMPANYInventors: Thomas G. Calvarese, Weiming Qiu, Anilkumar Raghavanpillai, Yamaira Gonzalez
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Publication number: 20140073069Abstract: An etching method according to an embodiment, includes performing etching on a material having tungsten (W) as a main component by using as an etchant a chemical solution having hydrogen peroxide as a main component. The chemical solution contains 12 ppm or more and 100,000 ppm or less of W.Type: ApplicationFiled: March 7, 2013Publication date: March 13, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Nagisa TAKAMI, Yoshihiro UOZUMI
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Publication number: 20140073226Abstract: The invention provides a polishing composition containing a pyrrolidone polymer, an aminophosphonic acid, a tetraalkylammonium salt, and water, wherein the composition has a pH of about 7 to about 11.7. The invention further provides a method of using such a polishing composition to polish a substrate, especially a substrate containing silicon.Type: ApplicationFiled: September 7, 2012Publication date: March 13, 2014Inventor: Nevin NAGUIB SANT
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Publication number: 20140065836Abstract: Monocrystalline semiconductor substrates are textured with alkaline solutions to form pyramid structures on their surfaces to reduce incident light reflectance and improve light absorption of the wafers. The alkaline baths include hydantoin compounds and derivatives thereof in combination with alkoxylated glycols to inhibit the formation of flat areas between pyramid structures to improve the light absorption.Type: ApplicationFiled: August 28, 2012Publication date: March 6, 2014Applicant: Rohm and Haas Electronic Materials LLCInventors: Michael P. TOBEN, Robert K. Barr, Corey O'Connor
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Publication number: 20140054266Abstract: The present invention provides chemical-mechanical polishing (CMP) methods for polishing a platinum and/or ruthenium containing substrate, and compositions suitable for use in the methods. The polishing compositions used with the methods of the invention, which contain alumina and at least one additive selected from the group consisting of a suppressor, a complexing agent, and an amino compound, allow for platinum and ruthenium to be polished. The methods of the invention provide for tailoring the relative removal rates of platinum, ruthenium, silicon oxide and silicon nitride.Type: ApplicationFiled: August 24, 2012Publication date: February 27, 2014Inventors: Wiechang JIN, Elizabeth REMSEN
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Patent number: 8658053Abstract: Disclosed is an etchant composition employed for selectively etching a metallic material in production of a semiconductor device, which is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. Also disclosed is a method for producing a semiconductor device employing the etchant composition.Type: GrantFiled: June 22, 2006Date of Patent: February 25, 2014Assignee: Mitsubishi Gas Chemical Company, Inc.Inventors: Kazuyoshi Yaguchi, Kojiro Abe, Masaru Ohto