Responsive To Non-electrical External Signal (e.g., Imager) Patents (Class 257/222)
  • Patent number: 10459094
    Abstract: A detector array such as for use in a radiation imaging modality is provided. The detector array includes a first pixel (302a) having a first scintillator (402). The first scintillator has a first detection surface (408) and a first light emission surface (412). The first detection surface extends along a first detection surface plane and the first light emission surface extends along a first light emission surface plane. The detector array includes a second pixel (302b) having a second scintillator (420). The second scintillator has a second detection surface (426) and a second light emission surface (430). The second detection surface extends along a second detection surface plane and the second light emission surface extends along a second light emission surface plane. At least one of the first detection surface plane is not coplanar with the second detection surface plane or the first light emission surface plane is not coplanar with the second light emission surface plane.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: October 29, 2019
    Assignee: Analogic Corporation
    Inventors: Sergey Simanovsky, Andrew Litvin, Daniel Abenaim
  • Patent number: 10438983
    Abstract: Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: October 8, 2019
    Assignee: Sony Corporation
    Inventors: Keiji Tatani, Takuji Matsumoto, Yasushi Tateshita, Fumihiko Koga, Takashi Nagano, Takahiro Toyoshima, Tetsuji Yamaguchi, Keiichi Nakazawa, Naoyuki Miyashita, Yoshihiko Nagahama
  • Patent number: 10431613
    Abstract: An image sensor includes a plurality of nanoantennas that satisfy sub-wavelength conditions. Each of the nanoantennas includes a diode and a transistor. Each diode is either a PN diode or a PIN diode.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: October 1, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seunghoon Han, Yibing Michelle Wang
  • Patent number: 10403673
    Abstract: An image sensor includes a transfer gate including a gate buried portion extending into a semiconductor substrate from a surface of the semiconductor substrate, a plurality of photoelectric conversion parts that are disposed in the semiconductor substrate on a side of the gate buried portion and vertically overlap each other, and a plurality of floating diffusion parts that are apart from and vertically overlap each other in the semiconductor substrate on other side of the gate buried portion, wherein at least one of the floating diffusion parts is positioned at a height of at least one of corresponding photoelectric conversion parts.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: September 3, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Gwi-Deok Ryan Lee, Taeyon Lee
  • Patent number: 10354727
    Abstract: A monitoring circuit for a CES element is provided. The circuit includes a control circuit and an output circuit. The control circuit is configured to vary a control signal provided to the CES element. The control signal may be varied for determining an impedance state of the CES element. The output circuit provided an output signal in dependence on the determined impedance state of the CES element.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: July 16, 2019
    Assignee: ARM Ltd.
    Inventors: Bal S. Sandhu, Robert Aitken, George Lattimore
  • Patent number: 10217778
    Abstract: The present invention provides an array substrate and a manufacturing method thereof. The method includes covering a reduction metal layer on an oxide semiconductor layer film and simultaneously forming a source pattern, a drain pattern, a pixel electrode pattern, and an oxide semiconductor layer through patterning the oxide semiconductor layer film and the reduction metal layer with one mask-based operation, followed by reducing the source pattern, the drain pattern, and the pixel electrode pattern to conductors through laser annealing to simultaneously form a source electrode, a drain electrode, and a pixel electrode. The entire manufacturing process needs, at most, only three rounds of mask-based operations so that, compared to the prior art, the number of mask-based operations required can be effectively reduced, the manufacturing operation can be simplified, and the performance of a TFT can be improved and an aperture ratio of the array substrate can be increased.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: February 26, 2019
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Yong Deng
  • Patent number: 10216044
    Abstract: In a first substrate of a liquid crystal device, among wiring lines extending to a non-display area interposed between a display area and an outer edge of a seal material, common potential lines are provided to interpose an interlayer insulating film between pixel electrodes. In contrast, the wiring lines which supply potentials different from common potentials is provided so as to interpose interlayer insulating films between the pixel electrodes. In the common potential lines, second wiring line sections extend so as to surround an entire circumference of the display area in the non-display area.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: February 26, 2019
    Assignee: Seiko Epson Corporation
    Inventor: Osamu Nakajima
  • Patent number: 10168437
    Abstract: A detector of ionizing radiation, e.g. x-ray radiation, allowing for the creation of a continuous digital image of a scanned object. The detection surface is formed by a mosaic of detector segments arranged in a matrix and consisted of a sensor layer arranged on a chip reader with the formation of tiers to engage an adjacent detector segment. The sensor layer is active over its entire area, and the matrix is provided with a means for positioning the detector segments to define their mutual lateral clearance less than the size of one pixel. The positioning means preferably comprises a carrier of rows. The resulting detection surface is active over its entire area and allows for the direct creation of continuous digital image without dead zones.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: January 1, 2019
    Assignees: ADVACAM S.R.O., CESKE VYSOKE UCENI TECHNICKE V PRAZE
    Inventor: Jan Jakubek
  • Patent number: 10170252
    Abstract: An electric micro-switch has at least one electric contact. The contact has a profiled section. The profiled section has a longitudinal extension, a bent portion formed in the longitudinal extension and having an outer surface that is, at least in section, formed in a rounded manner. A contact region is defined on the outer surface of the bent portion. A method for manufacturing the micro-switch is also disclosed.
    Type: Grant
    Filed: February 13, 2015
    Date of Patent: January 1, 2019
    Assignee: JOHNSON ELECTRIC S.A.
    Inventor: Martin Koepsell
  • Patent number: 10158821
    Abstract: A first photoelectric conversion unit is arranged in one end portion of a pixel, and a second photoelectric conversion unit is arranged in the other end portion of the pixel. A third photoelectric conversion unit is arranged in a center portion of the pixel. A length of the third photoelectric conversion unit in a predetermined direction is shorter than a length of the first photoelectric conversion unit and the second photoelectric conversion unit.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: December 18, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Taro Kato, Kazuya Igarashi, Takafumi Miki, Akinari Takagi
  • Patent number: 10147829
    Abstract: Some embodiments relate to an integrated circuit (IC) disposed on a silicon substrate, which includes a well region having a first conductivity type. A dielectric layer is arranged over an upper surface of the silicon substrate, and extends over outer edges of the well region and includes an opening that leaves an inner portion of the well region exposed. An epitaxial pillar of SiGe or Ge extends upward from the inner portion of the well region. The epitaxial pillar includes a lower epitaxial region having the first conductivity type and an upper epitaxial region having a second conductivity type, which is opposite the first conductivity type. A dielectric sidewall structure surrounds the epitaxial pillar and has a bottom surface that rests on an upper surface of the dielectric layer.
    Type: Grant
    Filed: September 23, 2016
    Date of Patent: December 4, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Ming Chen, Lee-Chuan Tseng, Ming Chyi Liu, Po-Chun Liu
  • Patent number: 10142569
    Abstract: The imaging device includes a multiple-property lens that includes a first area having a first property and a second area having a second property different from the first property, an image sensor in which a first light receiving element 25A having a first microlens and a second light receiving element 25B having a second microlens having a different focusing degree from the first microlens are two-dimensionally arranged, and a crosstalk removal processing unit that removes a crosstalk component from each of a first crosstalk image acquired from the first light receiving element 25A of the image sensor and a second crosstalk image acquired from the second light receiving element to generate a first image and a second image respectively having the first property and the second property of the multiple-property lens.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: November 27, 2018
    Assignee: FUJIFILM Corporation
    Inventor: Shuji Ono
  • Patent number: 10142574
    Abstract: An image device. While holding electric charges generated at a photoelectric conversion portion in a first period, a first charge holding portion holds electric charges generated at the photoelectric conversion portion in a second period which is a period that does not succeed the first period and which is different in length from the first period, and a second charge holding portion holds electric charges generated at the photoelectric conversion portion in a third period which is a period that does not overlap the first period and the second period.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: November 27, 2018
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuhiro Morimoto, Masahiro Kobayashi, Kazunari Kawabata, Taro Kato, Hiroshi Sekine
  • Patent number: 10126168
    Abstract: According to one embodiment, an optical sensor includes a first substrate, a first insulating film and a light-shielding film. The first substrate has a light detecting region detecting fluorescence generated from a fluorescent material by light with which irradiation is performed from a lateral side. The first insulating film is provided on the first substrate. The light-shielding film is provided, at least, on a side surface of the first substrate to which the light enters, on a side surface of the first insulating film and above a region excluding a region corresponding to the light detecting region of the first insulating film.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: November 13, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yosuke Akimoto, Shouhei Kousai, Kaita Imai, Michihiko Nishigaki, Yutaka Onozuka, Miyu Nagai
  • Patent number: 10122950
    Abstract: The imaging device includes a multiple-property lens that includes a first area having a first property and a second area having a second property different from the first property, an image sensor in which a first light receiving element 25A and a second light receiving element 25B having a different opening size of a light receiving section from the first light receiving element 25A are two-dimensionally arranged, and a crosstalk removal processing unit that removes a crosstalk component from each of a first crosstalk image acquired from the first light receiving element 25A of the image sensor and a second crosstalk image acquired from the second light receiving element to generate a first image and a second image respectively having the first property and the second property of the multiple-property lens.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: November 6, 2018
    Assignee: FUJIFILM Corporation
    Inventor: Shuji Ono
  • Patent number: 10096664
    Abstract: A method for manufacturing a flexible organic light emitting display is disclosed. The method is: sequentially forming a first buffer layer, a switch array layer, a display unit layer, and a thin film package layer on a flexible underlay substrate. When the flexible organic light emitting display bends along the flexible underlay substrate, a first bending deformation force is generated. The first buffer layer is used to absorb the first bending deformation force, and the material of the first buffer layer is an organic insulating material.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: October 9, 2018
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS CO., LTD.
    Inventor: Jiangbo Yao
  • Patent number: 10069023
    Abstract: An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: September 4, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: James Becker, Henry Litzmann Edwards
  • Patent number: 10056485
    Abstract: The present disclosure relates to semiconductor devices with gate-controlled energy filtering. One example embodiment includes a semiconductor device. The semiconductor device includes a first electrode, a second electrode, and a channel therebetween. The semiconductor device also includes a first interference structure located in the channel. Further, the semiconductor device includes a first gate for controlling a voltage over the first interference structure. The first interference structure is formed to induce a local mini-band structure that can be shifted by the voltage controlled by the first gate, such that the first local mini-band structure is: (1) aligned with a band structure in the semiconductor device to turn the semiconductor device on; and (2) misaligned with the band structure in the semiconductor device to turn the semiconductor device off.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: August 21, 2018
    Assignees: IMEC VZW, UNIVERSITEIT ANTWERPEN
    Inventors: Maarten Thewissen, Wim Magnus, Bart Soree
  • Patent number: 9979385
    Abstract: A monitoring circuit for a CES element is provided. The circuit includes a control circuit and an output circuit. The control circuit is configured to vary a control signal provided to the CES element. The control signal may be varied for determining an impedance state of the CES element. The output circuit provided an output signal in dependence on the determined impedance state of the CES element.
    Type: Grant
    Filed: October 5, 2015
    Date of Patent: May 22, 2018
    Assignee: ARM Ltd.
    Inventors: Bal S. Sandhu, Robert Aitken, George Lattimore
  • Patent number: 9973682
    Abstract: An image sensor includes a pixel array including first to fourth pixels having an R, G, and B Bayer pattern. An analog-to-digital converter (ADC) block converts a pixel signal of each of the first to fourth pixels into a digital pixel signal. At least one among the first to fourth pixels includes two photo diodes separated in a first direction, and at least one other of the first to fourth pixels includes two photo diodes separated in a second direction which is different from the first direction.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: May 15, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seog Heon Ham
  • Patent number: 9933304
    Abstract: An active photonic device having a Darlington configuration is disclosed. The active photonic device has a collector layer over a substrate, a base layer over the collector layer, and an emitter layer over the base layer. A connector structure electrically couples an inner emitter region with an outer base region, wherein the collector layer, base layer, the emitter layer and the connector structure are substantially centered within a first region over the substrate. A feedback resistor is coupled between an inner collector region and an inner base region. At least a portion of the feedback resistor is arc-shaped and resides over a first arcuate path defined by a substantially constant first radius centered in the first region.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: April 3, 2018
    Assignee: Qorvo US, Inc.
    Inventor: Kevin Wesley Kobayashi
  • Patent number: 9923103
    Abstract: A detachable package structure that includes an assembly substrate, a first semiconductor substrate, a second semiconductor substrate, and a combination element is provided. The first semiconductor substrate is disposed on the assembly substrate and has a first alignment portion. The second semiconductor substrate has a second alignment portion. The combination element allows the first semiconductor substrate and the second semiconductor substrate to be detachably combined together, such that the first alignment portion and the second alignment portion are aligned and combined.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: March 20, 2018
    Assignee: Centera Photonics Inc.
    Inventors: Hsu-Liang Hsiao, Guan-Fu Lu, Tzu-Ching Yeh, Chun-Chiang Yen
  • Patent number: 9918026
    Abstract: Photo-detector device for electro-optical sensors, comprising at least a detection and conversion circuit, or pixel (20), having at least a photo-sensitive reception mean (26) and a reset control terminal (11), which is able to drive an element to control the charge dissipation (23) of the photo-sensitive reception mean (26). The pixel (20) is able to convert the current generated by the photo-sensitive reception mean (26) into a voltage signal on a read-out terminal (28). The photo-detector device also comprises a circuit for controlling the reset voltage (40), able to generate a suitable input signal to the reset control terminal (11) by connecting it alternatively to a reset terminal (42) or to an external reference terminal (47), the input signal to said external reference terminal (47) is the type that can be programmed from outside. Furthermore, the circuit for controlling the reset voltage (40) can be shared between a subset of detection and control circuits (20).
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: March 13, 2018
    Assignee: EYE-TECH SRL
    Inventor: Monica Vatteroni
  • Patent number: 9885605
    Abstract: Embodiments relate to photoreceivers, such as photodiodes. In one embodiment, an integrated circuit device comprises a photodiode, and an electrode arranged over or on top of the photodiode. The electrode is substantially transparent or otherwise exhibits a lower absorption rate, such that light or other radiation can pass through the electrode to the photodiode. Varying a charge applied to the electrode enables the spectral sensitivity of the underlying photodiode to be altered, tuned or otherwise adjusted.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: February 6, 2018
    Assignee: Infineon Technologies AG
    Inventor: Thoralf Kautzsch
  • Patent number: 9887226
    Abstract: An imaging device that includes a substrate, a photoelectric conversion section disposed in the substrate, an element isolation region disposed adjacent to the photoelectric conversion section, a floating diffusion electrically connected to the photoelectric conversion section, an amplification transistor having a gate electrode and an active region, and a contact section disposed on the gate electrode of the amplification transistor. The contact section overlaps the active region of the amplification transistor. The floating diffusion is electrically connected to the gate electrode of the amplification transistor via the contact section. The width of the gate electrode of the amplification transistor is larger than a width of the active region of the amplification transistor. The photoelectric conversion section includes a first type impurity, and the element isolation region includes a second type impurity having a conductivity opposite to the first type impurity.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: February 6, 2018
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Kazuichiro Itonaga
  • Patent number: 9883131
    Abstract: An imaging device includes a photoelectric converter that generates charge; a first charge transfer channel having a first end electrically connected to the photoelectric converter and a second end, and transferring the charge in a direction from the first end to the second end; a second charge transfer channel diverging from the first charge transfer channel at a first position and transferring a first part of the charge; a third charge transfer channel diverging from the first charge transfer channel at a second position different from the first position in the direction and transferring a part of the second part of the charge; and first and second charge accumulators that accumulate at least a part of the first and second part of the charge respectively. The imaging device does not include a gate that switches between cutoff and transfer of charge, in the first charge transfer channel.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: January 30, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Sanshiro Shishido, Ryota Sakaida, Yoshiyuki Matsunaga
  • Patent number: 9881957
    Abstract: A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.
    Type: Grant
    Filed: May 16, 2016
    Date of Patent: January 30, 2018
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Mineo Shimotsusa, Takeshi Ichikawa, Yasuhiro Sekine
  • Patent number: 9834435
    Abstract: Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a semiconductor substrate including a cavity and a movable feature in the cavity. The semiconductor device structure also includes a cap substrate bonded to the semiconductor substrate to seal the cavity. There is an interface between the cap substrate and the semiconductor substrate. The semiconductor device structure further includes a sealing feature embedded in the semiconductor substrate and surrounding the cavity. The sealing feature extends across the interface and penetrates through the cap substrate.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: December 5, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ping-Yin Liu, Xin-Hua Huang, Yeong-Jyh Lin, Jung-Huei Peng
  • Patent number: 9818779
    Abstract: A semiconductor device is operated for sensing incident light and includes a substrate, a device layer, a semiconductor layer and a color filter layer. The device layer is disposed on the substrate and includes light-sensing regions. The semiconductor layer overlies the device layer and has a first surface and a second surface opposite to the first surface. The first surface is adjacent to the device layer. The semiconductor layer includes microstructures on the second surface. The color filter layer is disposed on the second surface of the semiconductor layer.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: November 14, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Nan Tu, Yu-Lung Yeh, Hsing-Chih Lin, Chien-Chang Huang, Shih-Shiung Chen
  • Patent number: 9812488
    Abstract: A backside illuminated (BSI) image sensor comprises a semiconductor substrate having a first surface and a second surface opposite to the first surface; a photosensitive element in the semiconductor substrate; a gate structure partially over the first surface of the semiconductor substrate; and a temporary carrier depository in proximity to the first surface of the semiconductor substrate, wherein the gate structure has a plug portion extending from the first surface toward the second surface. The plug portion of the gate structure helps to increase the charge transfer efficiency so as to improve quantum efficiency of the BSI image sensor.
    Type: Grant
    Filed: September 15, 2015
    Date of Patent: November 7, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tsung-Han Tsai, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Hsin-Chi Chen
  • Patent number: 9813679
    Abstract: The present technology relates to a solid-state imaging apparatus that can provide a compound-eye system solid-state imaging apparatus capable of capturing an image with high image quality regardless of use environments, a method of manufacturing a solid-state imaging apparatus, and an electronic apparatus. The solid-state imaging apparatus includes photoelectric conversion units (21) that are two-dimensionally arranged, on-chip lenses (27a) that are two-dimensionally arranged on an upper side of the photoelectric conversion units (21) in correspondence with the photoelectric conversion units (21), a micro-lens (10a) that is arranged so as to face each plurality of the on-chip lenses (27a), and a transparent material layer that is pinched between the on-chip lenses (27a) and the micro-lens (10a) and are configured by a first intermediate layer (29) and a second intermediate layer (31).
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: November 7, 2017
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Kensaku Maeda
  • Patent number: 9793315
    Abstract: A solid-state imaging apparatus 100a comprises: photoelectric conversion elements PD1 and PD2 formed within a first conductivity type semiconductor substrate 100; and transfer transistors Tt1 and Tt2 formed on a first main surface of the semiconductor substrate 100, for transferring the signal charge generated by the photoelectric conversion elements outside the photoelectric conversion elements. The gate electrode 107 of each of the transfer transistors is configured to be disposed over a surface of a first main surface side of an electric charge accumulating region 102, which configures each of the photoelectric conversion elements PD1 and PD2. As a result, a high-resolution image can be achieved, in which noises and afterimages are further suppressed.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: October 17, 2017
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Takefumi Konishi
  • Patent number: 9761636
    Abstract: The inventive concepts relate to image sensors. The image sensor includes a substrate including a floating diffusion region and a pixel circuit, an interlayer insulating layer on the substrate, a contact node and a first electrode on the interlayer insulating layer, a dielectric layer on a top surface of the first electrode, a channel semiconductor pattern on the dielectric layer and connected to the contact node, and a photoelectric conversion layer on the channel semiconductor pattern. The channel semiconductor pattern includes a semiconductor material having an electron mobility that is higher than an electron mobility of the photoelectric conversion layer.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: September 12, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Yon Lee, Masaru Ishii
  • Patent number: 9748302
    Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: August 29, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Yusuke Onuki, Yuichiro Yamashita, Masahiro Kobayashi
  • Patent number: 9704903
    Abstract: A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: July 11, 2017
    Assignee: STMICROELECTRONICS SA
    Inventor: Didier Dutartre
  • Patent number: 9640573
    Abstract: An imaging device that includes a substrate, a photoelectric conversion section disposed in the substrate, an element isolation region disposed adjacent to the photoelectric conversion section, a floating diffusion electrically connected to the photoelectric conversion section, an amplification transistor having a gate electrode and an active region, and a contact section disposed on the gate electrode of the amplification transistor. The contact section overlaps the active region of the amplification transistor. The floating diffusion is electrically connected to the gate electrode of the amplification transistor via the contact section. The width of the gate electrode of the amplification transistor is larger than a width of the active region of the amplification transistor. The photoelectric conversion section includes a first type impurity, and the element isolation region includes a second type impurity having a conductivity opposite to the first type impurity.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: May 2, 2017
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Kazuichiro Itonaga
  • Patent number: 9612762
    Abstract: A nonvolatile semiconductor memory device comprises a cell unit including a first and a second selection gate transistor and a memory string provided between the first and second selection gate transistors and composed of a plurality of serially connected electrically erasable programmable memory cells operative to store effective data; and a data write circuit operative to write data into the memory cell, wherein the number of program stages for at least one of memory cells on both ends of the memory string is lower than the number of program stages for other memory cells, and the data write circuit executes the first stage program to the memory cell having the number of program stages lower than the number of program stages for the other memory cells after the first stage program to the other memory cells.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: April 4, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Takuya Futatsuyama
  • Patent number: 9571770
    Abstract: A sense circuit includes a differential amplifier circuit including an inverting input section, a non-inverting input section and an output section, an electrical capacitor connected between the inverting input section and the output section, and a field effect transistor including a source, a drain, and a gate. One of the source and the drain is connected to the inverting input section, and the other of the source and the drain is connected to the output section. A reference potential is supplied to the non-inverting input section, and an output section of a photoelectric conversion cell having an added switching function is connected to the inverting input section.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: February 14, 2017
    Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, RICOH COMPANY, LTD.
    Inventors: Yutaka Hayashi, Toshitaka Ota, Yasushi Nagamune, Hirofumi Watanabe, Kazuhiro Yoneda, Katsuhiko Aisu, Takaaki Negoro
  • Patent number: 9520436
    Abstract: A solid-state imaging device includes a P-well, a gate insulating film, a gate electrode, a P+-type pinning layer that is located in the P-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a P?-type impurity region that is located in the P-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an N?-type impurity region that is located in the semiconductor layer under the P?-type impurity region and includes a portion that is under the pinning layer, and an N?-type impurity region that is in contact with the gate insulating film and the P?-type impurity region and is located so as to surround the N?-type impurity region in plan view.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: December 13, 2016
    Assignee: Dexerials Corporation
    Inventors: Kazunobu Kuwazawa, Noriyuki Nakamura, Mitsuo Sekisawa, Takehiro Endo
  • Patent number: 9509929
    Abstract: A solid state imaging device including: a plurality of sensor sections formed in a semiconductor substrate in order to convert incident light into an electric signal; a peripheral circuit section formed in the semiconductor substrate so as to be positioned beside the sensor sections; and a layer having negative fixed electric charges that is formed on a light incidence side of the sensor sections in order to form a hole accumulation layer on light receiving surfaces of the sensor sections.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: November 29, 2016
    Assignee: Sony Corporation
    Inventor: Yuko Ohgishi
  • Patent number: 9496425
    Abstract: An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
    Type: Grant
    Filed: March 10, 2013
    Date of Patent: November 15, 2016
    Assignee: KLA-Tencor Corporation
    Inventors: Jehn-Huar Chern, Ali R. Ehsani, Gildardo Delgado, David L. Brown, Yung-Ho Alex Chuang, John Fielden
  • Patent number: 9473679
    Abstract: In an imaging apparatus including a reset instruction unit configured to instruct a lens unit to reset an optical member thereof, a first communication system is used for communication for acquiring individual information of the lens unit, and a second communication system different from the first communication system is used for communication for instructing the lens unit to reset an optical member by a reset instruction unit.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: October 18, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventor: Hideya Takanashi
  • Patent number: 9450210
    Abstract: An organic electroluminescent display element, an optical thin film laminate and a production method thereof are disclosed. The optical thin film laminate comprises a circular polarizer film layer, a protection film layer provided on the light incidence side of the circular polarizer film layer, an adhesive layer provided on the light output side of the circular polarizer film layer, and a moisture and oxygen resistant film layer; wherein the moisture and oxygen resistant film layer is provided between the light output side of the circular polarizer film layer and the adhesive layer, and/or, between the light incidence side of the circular polarizer film layer and the protection film layer.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: September 20, 2016
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xue Gao, Fei Liu, Qinghui Zeng, Junran Wang, Jinlong Liao
  • Patent number: 9437647
    Abstract: A solid-state image capturing apparatus, comprising a semiconductor substrate including a first region of a first conductivity type, charge accumulation regions of a second conductivity type, transistors each outputting a signal based on charges accumulated in the charge accumulation region, a second region of the first conductivity type formed in a position deeper than the charge accumulation regions and shallower than the first region so as to be electrically conducted to the first region, whose impurity concentration is higher than that of the first region, and a third region of the second conductivity type formed between the second region and the first region, wherein the second region is formed across a region including two or more transistors in a planar view and supplies a current to each of the two or more transistors.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: September 6, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventor: Mahito Shinohara
  • Patent number: 9437640
    Abstract: Backside illuminated sensors and methods of manufacture are described. Specifically, a backside illuminated sensor with a dipole modulating layer near the photodiode is described.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: September 6, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Sherry Mings, Patricia M. Liu, Steven C. H. Hung
  • Patent number: 9431465
    Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
    Type: Grant
    Filed: January 6, 2015
    Date of Patent: August 30, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Masayuki Sakakura, Yoshiaki Oikawa, Kenichi Okazaki, Hotaka Maruyama
  • Patent number: 9425232
    Abstract: An imaging device includes a first semiconductor layer having a first surface and a second surface and a first photodetector having a first implanted region formed in the first semiconductor layer and a pad formed over the first implanted region. The imaging device also includes a readout circuit disposed over the first surface of the first semiconductor layer. The readout circuit has a plurality of contact plugs facing the first surface of the first semiconductor layer. The imaging device further includes a second semiconductor layer disposed below the second surface of the first semiconductor, a second photodetector having a second implanted region formed in the second semiconductor layer, and a metalized via extending through the first semiconductor layer and the second semiconductor layer and electrically connecting the second implanted region to a second of the contact plugs of the readout circuit.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: August 23, 2016
    Assignee: DRS Network & Imaging Systems, LLC
    Inventor: Pradip Mitra
  • Patent number: 9412785
    Abstract: A method of manufacturing a semiconductor apparatus comprising forming an electrode on a structure provided on a substrate, the structure including a wiring pattern and an interlayer insulation film, forming a first film covering the electrode and the structure, forming an opening in a portion of the first film inside an outer edge of a convex portion formed by steps between upper faces of the electrode and the structure so as to expose a first portion as a portion of the upper face of the electrode, forming a second film covering the first film and the first portion, forming a protective film covering the first portion, the convex portion, and a periphery of the convex portion by patterning the second film, and forming a third film on the first film and the protective film by spin coating.
    Type: Grant
    Filed: July 22, 2014
    Date of Patent: August 9, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Masaki Kurihara
  • Patent number: 9368534
    Abstract: An image sensor architecture provides an SNR in excess of 100 dB, without requiring the use of a mechanical shutter. The circuit components for an active pixel sensor array are separated and arranged vertically in at least two different layers in a hybrid chip structure. The top layer is preferably manufactured using a low-noise PMOS manufacturing process, and includes the photodiode and amplifier circuitry for each pixel. A bottom layer is preferably manufactured using a standard CMOS process, and includes the NMOS pixel circuit components and any digital circuitry required for signal processing. By forming the top layer in a PMOS process optimized for forming low-noise pixels, the pixel performance can be greatly improved, compared to using CMOS. In addition, since the digital circuitry is now separated from the imaging circuitry, it can be formed using a standard CMOS process, which has been optimized for circuit speed and manufacturing cost.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: June 14, 2016
    Assignee: AltaSens, Inc.
    Inventor: Lester J. Kozlowski
  • Patent number: RE47181
    Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: December 25, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: HeeYoung Beom, SungKyoon Kim, MinGyu Na, HyunSeoung Ju