Having Structure To Improve Output Signal (e.g., Antiblooming Drain) Patents (Class 257/223)
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Patent number: 9305199Abstract: An image reader can include an image sensor array. An image reader in one embodiment can include an optical system capable of directing light reflected from a target onto the image sensor array. An image reader can be used for reading a dataform.Type: GrantFiled: March 21, 2014Date of Patent: April 5, 2016Assignee: Hand Held Products, Inc.Inventors: Ynjiun Wang, William H. Havens
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Patent number: 9257081Abstract: A two-screen display device, in which an increase of production cost can be suppressed while the same resolution as an image of a usual (one-screen display) device is maintained, is provided. In a liquid crystal display panel of the two-screen display device, each of a first sub-pixel for first image and a second sub-pixel for second image has an aspect ratio of about 6:1. A source line supplies an image signal to both the first sub-pixel and the second sub-pixel. Each row of the sub-pixel includes a gate line (first gate line) that drives the first sub-pixel and a gate line (second gate line) that drives the second sub-pixel. An opening of a parallax barrier is disposed in a region between the first sub-pixel and the second sub-pixel.Type: GrantFiled: August 3, 2012Date of Patent: February 9, 2016Assignee: Mitsubishi Electric CorporationInventors: Akio Nakayama, Yoshimitsu Ishikawa
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Patent number: 9257473Abstract: According to one embodiment, a solid-state imaging device is provided which comprises a floating diffusion, a transfer gate, and a photoelectric conversion element. The floating diffusion is provided in a surface of a semiconductor layer. The transfer gate extends inward from the surface of the semiconductor layer and bends in the semiconductor layer toward the floating diffusion side. The photoelectric conversion element is provided in part of the semiconductor layer on the opposite side of the transfer gate from the floating diffusion and stretches from the side-surface side of the transfer gate to a position under the bottom thereof.Type: GrantFiled: June 3, 2015Date of Patent: February 9, 2016Assignee: Kabushiki Kaisha ToshibaInventor: Motohiro Maeda
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Patent number: 9257479Abstract: A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.Type: GrantFiled: December 23, 2013Date of Patent: February 9, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tetsunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Patent number: 9252185Abstract: A back side illuminated image sensor may be provided with an array of image sensor pixels. Each image sensor pixel may include a substrate having a front surface and a back surface. The image sensor pixels may have a charge storage region formed at the back surface and a charge readout node formed at the front surface of the substrate. The image sensor pixels may receive image light at the back surface of the substrate. Photo-generated charge may be accumulated at the charge storage region during a charge integration cycle. Upon completion of the charge integration cycle, a transfer gate formed at the front surface may be pulsed high to move the charge from the charge storage region to the charge readout node. The charge may be converted to a voltage at the charge readout node and may be read out using a rolling shutter readout mode.Type: GrantFiled: September 11, 2013Date of Patent: February 2, 2016Assignee: Semiconductor Components Industries, LLCInventor: Jaroslav Hynecek
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Patent number: 9209327Abstract: A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (?(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (?(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).Type: GrantFiled: January 22, 2014Date of Patent: December 8, 2015Assignee: Heptagon Micro Optics Pte. Ltd.Inventors: Simon Neukom, Michael Lehmann, Rolf Kaufmann, Thierry Oggier
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Patent number: 9203111Abstract: The object of an exemplary embodiment of the invention is to provide a secondary battery which contains a positive electrode active material operating at a potential of 4.5 V or higher and which has good cycle property at a high temperature. An exemplary embodiment of the invention is a secondary battery, comprising a positive electrode that can absorb and desorb lithium and an electrolyte liquid; wherein the positive electrode comprises a positive electrode active material that operates at a potential of 4.5 V or higher with respect to lithium; and wherein the electrolyte liquid comprises a fluorinated ether represented by a prescribed formula and a cyclic-type sulfonate represented by a prescribed formula.Type: GrantFiled: September 22, 2011Date of Patent: December 1, 2015Assignee: NEC CORPORATIONInventors: Makiko Uehara, Takehiro Noguchi, Hideaki Sasaki
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Patent number: 9196646Abstract: The present disclosure provides an image sensor semiconductor device. A semiconductor substrate having a first-type conductivity is provided. A plurality of sensor elements is formed in the semiconductor substrate. An isolation feature is formed between the plurality of sensor elements. An ion implantation process is performed to form a doped region having the first-type conductivity substantially underlying the isolation feature using at least two different implant energy.Type: GrantFiled: May 10, 2013Date of Patent: November 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jen-Cheng Liu, Ching-Hung Cheng, Chien-Hsien Tseng, Chia-Hao Hsu, Feng-Jia Shiu, Shou-Gwo Wuu
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Patent number: 9184209Abstract: In a TDI-type linear image sensor in which pixels are constituted of CCDs (Charge Coupled Devices) of n phases (n being an integer not smaller than 3), a gate opening portion and a gate non-opening portion functioning as a TDI transfer channel (15) are formed in all of transfer gates of the CCDs of n phases constituting the pixels. Within one pixel pitch in a TDI transfer direction, n microlenses (18) are formed such that light is concentrated at the gate non-opening portion formed at the transfer gate of each phase.Type: GrantFiled: September 24, 2012Date of Patent: November 10, 2015Assignee: Mitsubishi Electric CorporationInventors: Takahiro Onakado, Junji Nakanishi
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Patent number: 9130037Abstract: A semiconductor device may include a semiconductor substrate, a first conductive type well and a second conductive type drift region in the semiconductor substrate, the drift region including a first drift doping region and a second drift doping region, the second drift doping region vertically overlapping the well, and a first conductive type body region in the well, the body region being in contact with a side of the first drift doping region. The first drift doping region and the second doping region may include a first conductive type dopant and a second conductive type dopant, and an average density of the first conductive type dopant in the first drift doping region may be less than an average density of the first conductive type dopant in the second drift doping region.Type: GrantFiled: July 17, 2014Date of Patent: September 8, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventor: Jae-June Jang
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Patent number: 9117729Abstract: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.Type: GrantFiled: April 1, 2014Date of Patent: August 25, 2015Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventor: Christopher Parks
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Patent number: 9048159Abstract: A solid-state imaging device includes: a substrate; an insulator layer formed on the substrate; a semiconductor layer formed on the insulator layer; and a silicon layer formed on the semiconductor layer. The silicon layer includes a plurality of pixels each including a photoelectric converter configured to convert light into signal charge, and a circuit configured to read the signal charge, and a refractive index of the insulator layer is lower than a refractive index of the semiconductor layer.Type: GrantFiled: October 30, 2013Date of Patent: June 2, 2015Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Toru Okino, Mitsuyoshi Mori, Yutaka Hirose, Yoshihisa Kato, Tsuyoshi Tanaka
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Patent number: 9024361Abstract: Provided is a solid-state imaging device including: a photodiode which converts an optical signal to signal charges; a transfer gate which transfers the signal charges from the photodiode; an impurity diffusion layer to which the signal charges are transferred by the transfer gate; and a MOS transistor of which a gate is connected to the impurity diffusion layer. The impurity diffusion layer has a first conduction type semiconductor layer and a second conduction type semiconductor layer which is formed in the first conduction type semiconductor layer and under an end portion of the transfer gate.Type: GrantFiled: July 19, 2010Date of Patent: May 5, 2015Assignee: Sony CorporationInventors: Hiroyuki Ohri, Yasunori Sogoh
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Patent number: 9025060Abstract: A solid-state image sensor which comprises a pixel group in which unit pixels each including a microlens and a plurality of photo-electric converters are arrayed two-dimensionally, wherein a shielding unit that shields part of all of a plurality of photo-electric converters corresponding to a single microlens is provided in a portion of the unit pixels.Type: GrantFiled: March 23, 2012Date of Patent: May 5, 2015Assignee: Canon Kabushiki KaishaInventors: Akihiro Nishio, Ichiro Onuki, Koichi Fukuda, Ryo Yamasaki, Hideaki Yamamoto, Makoto Oikawa
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Patent number: 8994139Abstract: A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.Type: GrantFiled: March 8, 2012Date of Patent: March 31, 2015Assignee: Semiconductor Components Industries, LLCInventors: Edmund K. Banghart, Eric G. Stevens, Hung Q. Doan
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Patent number: 8970753Abstract: A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.Type: GrantFiled: June 13, 2011Date of Patent: March 3, 2015Assignee: Sony CorporationInventors: Eiji Makino, Tetsuji Nakaseko, Ryoji Eki, Youji Sakioka
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Patent number: 8946783Abstract: An image sensor including a semiconductor layer including a plurality of unit pixels each including a photoelectric conversion device and read devices; and an insulating layer including a light-shielding pattern defining a light-receiving region and a light-shielding region of the semiconductor layer, the insulating layer covering one surface of the semiconductor layer. The semiconductor layer further includes a potential drain region formed adjacent to an interface between the semiconductor layer and an insulating layer in the light-shielding region, wherein electrons generated due to defects occurring at the interface are accumulated in the potential drain region. At least one of the unit pixels in the light-shielding region provides a drain path for draining the electrons accumulated in the potential drain region.Type: GrantFiled: February 14, 2013Date of Patent: February 3, 2015Assignee: Samsung Electronics Co., Ltd.Inventor: Jung-Chak Ahn
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Patent number: 8933494Abstract: A pixel cell includes a storage transistor including a deep implant storage region having a first polarity is implanted in a semiconductor substrate to store image charge accumulated by a photodiode. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a readout node. A first shallow implant region having the first polarity is implanted in the semiconductor substrate under a first spacer region between a transfer gate of the transfer transistor and a storage gate of the storage transistor. A second shallow implant region having the first polarity is implanted in the semiconductor substrate under a second spacer region between the storage gate and the output gate.Type: GrantFiled: September 26, 2013Date of Patent: January 13, 2015Assignee: OmniVision Technologies, Inc.Inventors: Sing-Chung Hu, Dajiang Yang, Zhenhong Fu
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Patent number: 8921855Abstract: It is disclosed that, as an embodiment, a test circuit includes a test signal supply unit configured to supply a test signal via a signal line to signal receiving units provided in a plurality of columns, wherein the test signal supply unit is a voltage buffer or a current buffer, and the test circuit has a plurality of test signal supply units and a plurality of signal lines, and wherein at least one test signal supply unit is electrically connected to one signal line different from a signal line to which another test signal supply unit is electrically connected.Type: GrantFiled: March 2, 2012Date of Patent: December 30, 2014Assignee: Canon Kabushiki KaishaInventors: Akira Okita, Masaaki Iwane, Yu Arishima, Masaaki Minowa
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Patent number: 8916869Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10?13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.Type: GrantFiled: January 3, 2013Date of Patent: December 23, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Jun Koyama, Shunpei Yamazaki
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Patent number: 8911668Abstract: A Lab On a Chip (LOC) has a Sample Preparation Module (SPM) coupled to a sample inlet, a microchannel coupled to the SPM, and an optic module optically proximate to the microchannel. The optic module holds multiple lenses, each of which has a different effective focal length, such that all fields of focus within the microchannel are covered as objects suspended within the liquid sample pass through the microchannel.Type: GrantFiled: June 27, 2013Date of Patent: December 16, 2014Assignee: International Business Machines CorporationInventors: Timothy Durniak, Robert R. Friedlander, James R. Kraemer
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Patent number: 8907342Abstract: Embodiments of the disclosed technology provide to a thin film transistor array substrate comprising a first base substrate; a gate line formed on the first base substrate; and two data lines separately formed on the first base substrate; wherein the two data lines are located on both sides of the gate line respectively in the direction of data signal transmission but do not overlap with the gate line. The two data lines can be electrically connected through conductive elements for transmitting data signals.Type: GrantFiled: April 6, 2012Date of Patent: December 9, 2014Assignee: Boe Technology Group Co., Ltd.Inventor: Mi Zhang
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Patent number: 8902341Abstract: A solid-state imaging device with unit pixels which have a photoelectric conversion element, an electric charge transferring/accumulating unit with multiple levels able to transfer electric charge generated in the photoelectric conversion element and accumulate the electric charge, and an electric charge detection unit that holds the electric charge transferred from the photoelectric conversion element, where, after resetting the photoelectric conversion element, all unit pixels simultaneously transfer signal electric charges, which are generated in the photoelectric conversion element during continuous exposure times of which each has a different duration, to the electric charge transferring/accumulating units and accumulate the signal electric charges in the different respective electric charge transferring/accumulating units, and in units of one or more pixels, the signal electric charges is transferred to the electric charge detecting unit and a plurality of signals which respectively corresponds to the pType: GrantFiled: March 25, 2011Date of Patent: December 2, 2014Assignee: Sony CorporationInventor: Keiji Mabuchi
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Patent number: 8847285Abstract: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.Type: GrantFiled: September 20, 2012Date of Patent: September 30, 2014Assignee: Semiconductor Components Industries, LLCInventor: Christopher Parks
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Patent number: 8785982Abstract: A unit pixel of a depth sensor including a light-intensity output circuit configured to output a pixel signal according to a control signal, the pixel signal corresponding to a first electric charge and a second electric charge, a first light-intensity extraction circuit configured to generate the first electric charge and transmit the first electric charge to the light-intensity output circuit, the first electric charge varying according to an amount of light reflected from a target object and a second light-intensity extraction circuit configured to generate the second electric charge and transmit the second electric charge to the light-intensity output circuit, the second electric charge varying according to the amount of reflected light. The light-intensity output circuit includes a first floating diffusion node. Accordingly, it is possible to minimize waste of a space, thereby manufacturing a small-sized pixel.Type: GrantFiled: September 13, 2012Date of Patent: July 22, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Woo Joo Kim, Hyoung Soo Ko, Yoon Dong Park, Jung Bin Yun
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Patent number: 8759886Abstract: A solid-state image capturing device including: a substrate; a substrate voltage source which applies a first potential to the substrate during a light reception period and applies a second potential to the substrate during a non-light reception period; and a plurality of pixels which each includes a light receiver which is formed on a front surface of the substrate and generates signal charges in accordance with received light, a storage capacitor which is formed adjacent to the light receiver and accumulates and stores signal charges generated by the light receiver, dark-current suppressors which are formed in the light receiver and the storage capacitor, an electronic shutter adjusting layer which is formed in an area facing the light receiver in the substrate and distant from the storage capacitor and which adjusts potential distribution, and a floating diffusion portion to which the signal charges accumulated in the storage capacitor are transmitted.Type: GrantFiled: May 22, 2013Date of Patent: June 24, 2014Assignee: Sony CorporationInventor: Hideo Kanbe
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Patent number: 8748954Abstract: The invention relates to linear time-delay and integration sensors (or TDI sensors). According to the invention, adjacent pixels of the same rank comprise, alternately, at least one photodiode and one transfer gate adjacent to the photodiode, the photodiodes comprising a common reference region of a first conductivity type, in which an individual region of opposite conductivity type is formed, itself covered by a individual surface region of the first conductivity type, characterized in that the surface regions of two photodiodes located on either side of a transfer gate are electrically separated so as to be able to be brought to different potentials in order to create potential wells and potential barriers allowing accumulation and transfer of charges as desired.Type: GrantFiled: December 2, 2010Date of Patent: June 10, 2014Assignee: E2V SemiconductorsInventor: Frederic Mayer
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Publication number: 20140146209Abstract: The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode, and a floating diffusion positioned on a substrate. The pixel also includes a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, where the charge harrier temporarily blocks charge transfer between the first photo-diode and the second photo-diode. A pump gate may also be formed on the substrate adjacent to the charge barrier. The pump gate pumps the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier. Also included is a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion. The transfer gate serves to transfer the pumped charge from, the second photo-diode to the floating diffusion.Type: ApplicationFiled: February 3, 2014Publication date: May 29, 2014Applicant: Aptina Imaging CorporationInventors: Chung Chun Wan, Xiangli Li
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Patent number: 8735952Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal and blooming is suppressed by controlling a substrate voltage of the semiconductor substrate.Type: GrantFiled: July 17, 2007Date of Patent: May 27, 2014Assignee: Sony CorporationInventors: Maki Sato, Yoshiharu Kudoh
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Patent number: 8674359Abstract: A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer, and is arranged on the active layer, a portion of the metal member contacts the source and drain regions of the active layer and the source and drain electrodes, and portions of the active layer that corresponds to portions below the metal member of the active layer are not doped.Type: GrantFiled: April 4, 2011Date of Patent: March 18, 2014Assignee: Samsung Display Co., Ltd.Inventors: Dae-Hyun Noh, Sung-Ho Kim
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Patent number: 8643008Abstract: A semiconductor device which can operate at high speed and consumes a smaller amount of power is provided. In a semiconductor device including transistors each including an oxide semiconductor, the oxygen concentration of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from that of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current. Typically, the oxygen concentration of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current is lower than that of the oxide semiconductor film of the transistor having small current at negative gate voltage.Type: GrantFiled: July 12, 2012Date of Patent: February 4, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Naoto Yamade, Junichi Koezuka
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Patent number: 8614464Abstract: Disclosed herein are a nitride-based semiconductor device and a method for manufacturing the same. The nitride-based semiconductor device includes: a base substrate having a front surface and a rear surface opposite to the front surface; an epitaxial growth film formed on the front surface of the base substrate; a semiconductor layer formed on the rear surface of the base substrate; and an electrode structure body provided on the epitaxial growth film.Type: GrantFiled: March 16, 2011Date of Patent: December 24, 2013Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Woochul Jeon, Kiyeol Park, Younghwan Park
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Patent number: 8558234Abstract: Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.Type: GrantFiled: February 11, 2011Date of Patent: October 15, 2013Assignee: California Institute of TechnologyInventors: Shouleh Nikzad, Chris Martin, Michael E. Hoenk
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Patent number: 8546197Abstract: A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.Type: GrantFiled: May 12, 2011Date of Patent: October 1, 2013Assignee: Sony CorporationInventors: Noriyuki Kawashima, Hidehisa Murase, Mao Katsuhara
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Patent number: 8513710Abstract: In realizing an entire-screen simultaneous shutter function using a solid-state imaging device having a device structure as a CMOS solid-state imaging device, the restriction undergone by exposure time is relieved to secure a sufficient exposure time with swift operation. Separately from a transfer Tr for transferring a signal charge of a buried-type PD to an FD, a drain Tr is provided to exclude a signal charge of the buried PD. Both a channel potential on the drain transistor when turned on and a channel potential on the transfer transistor when turned on are set higher than a depleting potential for the PD. This makes it possible to completely transfer the signal charge of the PD by both the transfer Tr and the drain Tr. In the operation to sequentially read out a signal charge from the FD on a pixel-row basis, PD exposure operation is started in a course of reading out the same.Type: GrantFiled: October 14, 2003Date of Patent: August 20, 2013Assignee: Sony CorporationInventor: Keiji Mabuchi
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Patent number: 8492804Abstract: A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.Type: GrantFiled: November 12, 2010Date of Patent: July 23, 2013Assignee: Sony CorporationInventors: Tetsuji Yamaguchi, Yasushi Maruyama, Takashi Ando, Susumu Hiyama, Yuko Ohgishi
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Patent number: 8482040Abstract: A solid-state image capturing device includes: a substrate; a substrate voltage source which applies a first potential to the substrate during a light reception period and applies a second potential to the substrate during a non-light reception period; and a plurality of pixels which each includes a light receiver which is formed on a front surface of the substrate and generates signal charges in accordance with received light, a storage capacitor which is formed adjacent to the light receiver and accumulates and stores signal charges generated by the light receiver, dark-current suppressors which are formed in the light receiver and the storage capacitor, an electronic shutter adjusting layer which is formed in an area facing the light receiver in the substrate and distant from the storage capacitor and which adjusts potential distribution, and a floating diffusion portion to which the signal charges accumulated in the storage capacitor are transmitted.Type: GrantFiled: January 28, 2010Date of Patent: July 9, 2013Assignee: Sony CorporationInventor: Hideo Kanbe
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Patent number: 8471310Abstract: Image sensor arrays may include image sensor pixels each having at least one back-gate-modulated vertical transistor. The back-gate-modulated vertical transistor may be used as a source follower amplifier. An image sensor pixel need not include an address transistor. The image sensor pixel with the back-gate-modulated vertical source follower transistor may exhibit high fill factor, large charge storage capacity, and has as few as two row control lines and two column control lines per pixel. This can be accomplished without pixel circuit sharing. The pixel may also provide direct photo-current sensing capabilities. The ability to directly sense photo-current may facilitate fast adjustment of sensor integration time. Fast adjustment of sensor integration time may be advantageous in automotive and endoscopic applications in which the time available for the correction of integration time is limited.Type: GrantFiled: January 11, 2011Date of Patent: June 25, 2013Assignee: Aptina Imaging CorporationInventor: Jaroslav Hynecek
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Patent number: 8471314Abstract: A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.Type: GrantFiled: February 11, 2010Date of Patent: June 25, 2013Assignee: Sony CorporationInventors: Yasushi Maruyama, Tetsuji Yamaguchi, Takashi Ando, Susumu Hiyama, Yuko Ohgishi
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Patent number: 8466498Abstract: In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).Type: GrantFiled: January 27, 2010Date of Patent: June 18, 2013Assignee: Hamamatsu Photonics K.K.Inventors: Hisanori Suzuki, Yasuhito Yoneta, Shin-ichiro Takagi, Kentaro Maeta, Masaharu Muramatsu
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Patent number: 8466469Abstract: A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.Type: GrantFiled: April 2, 2004Date of Patent: June 18, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yasuyuki Arai, Satoshi Teramoto
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Patent number: 8426896Abstract: A solid state imaging device in which ? characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.Type: GrantFiled: June 28, 2011Date of Patent: April 23, 2013Assignee: Sony CorporationInventor: Tetsuro Kumesawa
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Publication number: 20130092982Abstract: Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.Type: ApplicationFiled: October 13, 2011Publication date: April 18, 2013Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Gang Chen, Sing-Chung Hu, Hsin-Chih Tai, Duli Mao, Manoj Bikumandla, Wei Zheng, Yin Qian, Zhibin Xiong, Vincent Venezia, Keh-Chiang Ku, Howard E. Rhodes
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Patent number: 8395194Abstract: A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.Type: GrantFiled: September 21, 2011Date of Patent: March 12, 2013Assignee: Panasonic CorporationInventors: Haruhisa Yokoyama, Hiroshi Sakoh, Kazuhiro Yamashita, Mitsuo Yasuhira, Yuichi Hirofuji
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Patent number: 8378391Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10?13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.Type: GrantFiled: November 3, 2010Date of Patent: February 19, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Jun Koyama, Shunpei Yamazaki
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Patent number: 8378401Abstract: A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.Type: GrantFiled: December 22, 2011Date of Patent: February 19, 2013Assignee: Panasonic CorporationInventors: Mitsuyoshi Mori, Takumi Yamaguchi, Takahiko Murata
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Patent number: 8373781Abstract: A pixel of an image sensor includes only two signal lines per pixel, a pinned photodiode for sensing light, a floating base bipolar transistor, and no reset and address transistors. The floating base bipolar transistor provides the pixel with a gain, which can increase pixel sensitivity and reduce noise. The pixel also incorporates a vertical blooming control structure for an efficient blooming suppression. The output terminals of the pixel are coupled to a common column output line terminated by a special current sensing correlated double sampling circuit, which is used for subtraction of emitter leakage current. Based on this structure, the pixel has high sensitivity, high response uniformity, low noise, reduced size, and efficient layout.Type: GrantFiled: December 21, 2007Date of Patent: February 12, 2013Assignee: Intellectual Ventures II LLCInventor: Jaroslav Hynecek
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Patent number: 8373780Abstract: A solid-state image sensor includes: a transfer control section configured to control charge transfer from the vertical transfer section to the horizontal transfer section. The transfer control section has a plurality of unit control sections corresponding to the transfer packets. The unit control section has a vertical transfer channel and a plurality of control section electrodes formed over the vertical transfer channel. The control section electrodes include a signal charge accumulating electrode and a transfer inhibiting electrode, which are sequentially formed from a side of the vertical transfer section. The vertical transfer channels are independently connected to a horizontal transfer channel. When stopping the charge transfer from the vertical transfer section to the horizontal transfer section, a high-level voltage is applied to the signal charge accumulating electrode, and a low-level voltage is applied to the transfer inhibiting electrode.Type: GrantFiled: August 12, 2011Date of Patent: February 12, 2013Assignee: Panasonic CorporationInventors: Koichi Yonemura, Sei Suzuki
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Patent number: 8367508Abstract: A method for forming a field effect transistor includes forming a gate stack, a spacer adjacent to opposing sides of the gate stack, a silicide source region and a silicide drain region on opposing sides of the spacer, epitaxially growing silicon on the source region and the drain region; forming a liner layer on the gate stack and the spacer, removing a portion of the liner layer to expose a portion of the hardmask layer, removing the exposed portions of the hardmask layer to expose a silicon layer of the gate stack, removing exposed silicon to expose a portion of a metal layer of the gate stack, the source region, and the drain region; and depositing a conductive material on the metal layer of the gate stack, the silicide source region, and the silicide drain region.Type: GrantFiled: April 9, 2010Date of Patent: February 5, 2013Assignee: International Business Machines CorporationInventors: Dechao Guo, Wilfried E. Haensch, Xinhui Wang, Keith Kwong Hon Wong
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Patent number: RE45891Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.Type: GrantFiled: September 28, 2012Date of Patent: February 16, 2016Assignee: Sony CorporationInventors: Takashi Abe, Ryoji Suzuki, Keiji Mabuchi, Tetsuya Iizuka, Takahisa Ueno, Tsutomu Haruta