Abstract: An imaging element and device configured for reduced image quality deterioration are disclosed. In one example, a pixel unit of the imaging element includes a selection transistor and an amplification transistor each constituted by a multigate transistor. The selection transistor and amplification transistor may be a FinFET that includes a silicon channel having a fin shape. Moreover, gates of the selection transistor and the amplification transistor may be formed on an identical silicon channel having a fin shape. Furthermore, for example, an ion having a smaller thermal diffusivity than a thermal diffusivity of boron or phosphorous is injected into the silicon channel of the selection transistor. In addition, for example, a work function of a material of a gate electrode of the selection transistor is different from a work function of a material of a gate electrode of the amplification transistor.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes a light receiving surface, and two or more pixels opposed to the light receiving surface. Each of the pixels includes a photoelectric conversion section that performs photoelectric conversion on light entering via the light receiving surface, a first charge holding section that holds a charge transferred from the photoelectric conversion section, and a second charge holding section disposed at a position where all or a portion thereof overlaps the first charge holding section in a planar layout, and formed to have no electrical continuity to the first charge holding section. Each of the pixels further includes a first transfer transistor that transfers the charge held by the first charge holding section to a floating diffusion, and a second transfer transistor that transfers a charge held by the second charge holding section to the floating diffusion.

Abstract: An image sensor is disclosed. The image sensor includes a photo detector and a readout structure electronically coupled to the photodetector. The photodetector is configured to accumulate one or more photo charges responsive to one or more incident photons during an integration period. The readout structure is configured to repeatedly and nondestructively assess an amount of minority carrier photo charges accumulated at the photodetector during the integration period.

Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.

Abstract: An imaging device that makes it possible to smoothly transfer electric charges from a photoelectric converter to a transfer destination is provided. This imaging device includes: a semiconductor layer having a front surface and a back surface, the back surface being on an opposite side of the front surface; photoelectric converter that is embedded in the semiconductor layer and generates electric charges corresponding to a received light amount; and a transfer section that includes a first trench gate and a second trench gate and transfers the electric charges from the photoelectric converter to a single transfer destination via the first trench gate and the second trench gate, the first trench gate and the second trench gate each extending from the front surface to the back surface of the semiconductor layer into the photoelectric converter.

Abstract: There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Abstract: A photoelectric conversion device includes a first pixel including a photoelectric converter, a first node to which charge is transferred from the photoelectric converter, and a first transistor that resets a voltage of the first node, and configured to output a first signal in accordance with a voltage of the first node, a second pixel including a second node to which a predetermined voltage is supplied and a second transistor that resets a voltage of the second node, and configured to output a second signal in accordance with a voltage of the second node; and a control line connected to the first transistor and the second transistor. The first transistor resets the first node to a first voltage, and the second transistor resets the second node to a second voltage having a smaller amplitude than the first voltage.

Abstract: An image sensing device includes a plurality of image sensor pixels including a first image sensor pixel and a second image sensor pixel and a transmission driver. The transmission driver is coupled to first and second transfer gates to apply a first transmission signal to the first transfer gate to control the first transfer gate and a second transmission signal to the second transfer gate to control the second transfer gate. A first distance between the first image sensor pixel and the transmission driver is shorter than a second distance between the second image sensor pixel and the transmission driver, and the first and second transfer gates of the first image sensor pixel are different in structure from the first and second transfer gates of the second image sensor pixel, respectively.

Abstract: A pixel unit and a manufacturing method thereof, a sensor, and a sensor array are provided. The pixel unit comprises: a photosensitive unit, configured to generate a photo-generated carrier according to received radiation; at least two transmission units, connected between the photosensitive unit and at least two floating diffusion nodes, and configured to transfer the photo-generated carrier from the photosensitive unit to the at least two floating diffusion nodes; and the at least two floating diffusion nodes, configured to store and output the photo-generated carrier generated by the photosensitive unit. Among the at least two floating diffusion nodes, the floating diffusion node spaced by more transmission units from the photosensitive unit has a lower electric potential.

Abstract: A pixel array includes a semiconductor substrate, a plurality of isolation layer segments, and a plurality of photodiodes. Each of the plurality of isolation layer segments extends through the semiconductor substrate in a first direction. Each of the plurality of isolation layer segments encloses a portion of the semiconductor substrate in a plane perpendicular to the first direction. The plurality of isolation layer segments form a grid that defines a plurality of isolated sections of the semiconductor substrate. The plurality of isolated sections of the semiconductor substrate include the portions of the semiconductor substrate. Each of the photodiodes is formed in a respective one of the plurality of isolated sections of the semiconductor substrate.

Abstract: A photoelectric conversion apparatus that includes a pixel region having photoelectric conversion elements includes a semiconductor layer having first and second surfaces, and the photoelectric conversion elements are disposed between the first and second surfaces. With a virtual plane extending along the second surface between the first and second surfaces being a third plane, the pixel region includes an element isolating portion constituted by an insulator disposed closer to the first surface than the third plane, and first and second isolating portions constituted by grooves provided in the semiconductor layer to pass through the third plane. The first isolating portion overlaps the element isolating portion in a normal direction to the third plane. An end of the second isolating portion on a side on the first surface is closer to the second surface than an end of the first isolating portion on a side on the first surface is.

Abstract: A method of manufacturing an image sensor includes at least the following steps. A storage node is formed in a substrate. A gate dielectric layer, a storage gate electrode, and a first dielectric layer are sequentially formed over the substrate. A portion of the first dielectric layer is removed to form an opening. A protection layer and a shielding layer are sequentially filled into the opening. The protection layer laterally surrounds the shielding layer and at least a portion of the protection layer is located between the storage gate electrode and the shielding layer. A second dielectric layer is formed over the shielding layer.

Abstract: The imaging element includes, within a pixel, a semiconductor substrate, a photoelectric conversion unit formed in the semiconductor substrate, a first charge storage unit that stores a charge generated by the photoelectric conversion unit, and a first transfer gate unit formed on an opposite surface of the semiconductor substrate on an opposite side of a light incident surface and used for transfer of a charge from the photoelectric conversion unit to the first charge storage unit. The first transfer gate unit includes a first electrode embedded in a first trench formed in the semiconductor substrate from the opposite surface of the semiconductor substrate. The photoelectric conversion unit includes the first electrode, and a second electrode surrounding at least a portion of a periphery of the first electrode.

Abstract: Disclosed herein is a radiation detector, comprising: pixels arranged in an array, the pixels comprising peripheral pixels at a periphery of the array and interior pixels at an interior of the array, each of the pixels configured to generate an electrical signal on an electrode thereof, upon exposure to a radiation; an electronic system configured to provide first compensation to the peripheral pixels for a dark noise of the peripheral pixels and to provide second compensation to the interior pixels for a dark noise of the interior pixels, the first compensation and the second compensation being different.

Abstract: To solve at least one of various problems in an image sensor in a 2PD scheme. A solid-state image pickup element includes a plurality of pixels each including a photoelectric conversion element formed on a silicon substrate, in which some pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a first-type separating region extending in a plate shape in a direction along a thickness direction of the silicon substrate, and other pixels in the plurality of pixels each have the photoelectric conversion element partitioned by a second-type separating region formed with a material different from a material of the first-type separating region, the second-type separating region extending in a plate shape in the direction along the thickness direction of the silicon substrate.

Abstract: A pixel cell includes a photodiode disposed in a semiconductor material layer to accumulate image charge photogenerated in the photodiode in response to incident light. A storage transistor is coupled to the photodiode to store the image charge photogenerated in the photodiode. The storage transistor includes a storage gate disposed proximate a first surface of the semiconductor material layer. The storage gate includes a pair of vertical transfer gate (VTG) portions. Each one of the pair of VTG portions extends a first distance into the semiconductor material layer through the first surface of the semiconductor material layer. A storage node is disposed below the first surface of the semiconductor material layer and between the pair of VTG portions of the storage gate to store the image charge transferred from the photodiode in response to a storage signal.

Abstract: An imaging device which does not include a color filter and does not need arithmetic processing using an external processing circuit is provided. A first circuit includes a first photoelectric conversion element, a first transistor, and a second transistor; a second circuit includes a second photoelectric conversion element, a third transistor, and a fourth transistor; a third circuit includes a fifth transistor, a sixth transistor, a seventh transistor, and a second capacitor; the spectroscopic element is provided over the first photoelectric conversion element or the second photoelectric conversion element; and the first circuit and the second circuit is connected to the third circuit through a first capacitor.

Abstract: An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and includes a storage node, a gate dielectric layer, a storage gate electrode, and etch stop layer, a shielding layer, and a protection layer. The gate dielectric layer is over the storage node. The storage gate electrode is over the gate dielectric layer. The etch stop layer covers the gate dielectric layer and the storage gate electrode. The shielding layer is over the storage gate electrode. The protection layer is sandwiched between the etch stop layer and the shielding layer. The driving circuit is adjacent to the storage device.

Abstract: A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected to a node of application of a potential. The insulating wall includes at least a portion provided with a deep insulating plug penetrating into the insulated conductor down to a second depth greater than the first depth. A continuous portion of the insulating wall laterally delimits, at least partially, a charge accumulation area and includes a wall portion with the deep insulating plug at least partially laterally delimiting the read region of the transistor.

Abstract: A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected to a node of application of a potential. The insulating wall includes at least a portion provided with a deep insulating plug penetrating into the insulated conductor down to a second depth greater than the first depth. A continuous portion of the insulating wall laterally delimits, at least partially, a charge accumulation area and includes a wall portion with the deep insulating plug at least partially laterally delimiting the read region of the transistor.

Abstract: A vision system of a vehicle includes a camera disposed at a vehicle and having a field of view exterior of the vehicle. The camera includes an imaging array having rows and columns of photosensing elements that may include red light sensing elements, green light sensing elements and blue light sensing elements. An image processor is operable to process image data captured by the camera. A display is disposed in the vehicle and viewable by a driver of the vehicle and is operable to display images derived from captured image data. Responsive to image processing of captured image data by the image processor, temporal noise in images derived from captured image data is reduced by determining a change in luminance of photosensing elements from a first frame of captured image data to a second frame of captured image data.

Abstract: A pixel arrangement structure, a display panel and a display device are provided. The pixel arrangement structure includes a plurality of repeating units, each repeating unit includes one first sub-pixel, one second sub pixel and two third sub-pixels; the four sub-pixels of each repeating unit constitute two pixels, with the first sub-pixel and the second sub-pixel being shared by the two pixels; in a first direction of the pixel array, the sub-pixel density is equal to 1.5 times of the pixel density, in a second direction of the pixel array, the sub-pixel density is equal to 1.5 times of the pixel density; wherein, the first direction and the second direction are different directions.

Abstract: A solid-state imaging apparatus comprises a pixel unit including G-pixels 110-G, R-pixels 110-R, and B-pixels 110-B, an image signal output interval of the G-pixels 110 made shorter than image signal output intervals of the R-pixels and B-pixels. Regarding lights respectively having wavelength bands near a green color, near a red color, and near a blue color, the G-pixels 110-G have higher sensitivity to the wavelength band near the green color than both to the wavelength band near the red color and wavelength band near the blue color, the R-pixels 110-R have higher sensitivity to the wavelength band near the red color than both to the wavelength band near the green color and wavelength band near the blue color, and the B-pixels 110-B have higher sensitivity to the wavelength band near the blue color than both to the wavelength band near the green color and wavelength band near the red color.

Abstract: An imaging system may include multi-port pixels. A multi-port pixel may include a photodiode that generates electrical charge in response to received light and a plurality of access ports that couple the electrical charge onto one of a corresponding plurality of pixel output lines. The photodiode may generate electrical charge for one or more different integration times while a frame is being captured. Charge generated during the different integration times may be coupled onto different respective pixel output lines through different respective access ports. Multiple pixels in a given column of the pixel array may simultaneously couple charge generated during different integration times onto different pixel output lines through different access ports.

Abstract: An ion sensor is configured such that part of a P well on which part a sensing section is provided is different, in dopant concentration, from the other part of the P well so that electric charges are injected merely to the sensing section in a state where a voltage is applied to an N-type substrate.

Abstract: A unit pixel of an image sensor which operates in global shutter mode is provided. The unit pixel includes a photo diode area including a photo diode configured to accumulate photocharges generated from incident light during a first period and a storage diode area including a storage diode configured to receive and store the photocharges from the photo diode. The photo diode corresponds to a micro lens that focuses the incident light.

Abstract: A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected to a node of application of a potential. The insulating wall includes at least a portion provided with a deep insulating plug penetrating into the insulated conductor down to a second depth greater than the first depth. A continuous portion of the insulating wall laterally delimits, at least partially, a charge accumulation area and includes a wall portion with the deep insulating plug at least partially laterally delimiting the read region of the transistor.

Abstract: Image capturing systems with interline CCD structures designed to reduce the delay between captures of subsequent image frames are disclosed. Proposed interline CCD structures include two or more sets of storage units associated with a given set of photodetecting elements, where each photodetecting element is associated with one storage unit of each set of storage units in that the charge generated by the photodetecting element during the acquisition of a particular image frame (i.e. during a particular exposure period) may be stored any one of these storage units prior to read-out. Providing multiple sets of storage units allows read-out of charge corresponding to one image frame and stored in one set of storage units while accumulating charge corresponding to another image frame in another set of storage units, thus reducing the delay between captures of different image frames. Consequently, errors and artifacts of the image capturing system can be minimized.

Abstract: In one form, a pixel for use in image sensing comprises a photodetector, a sink device, and a readout circuit. The photodetector is formed in a semiconductor substrate and has a charge collection region for receiving photocharge representative of incident light. The sink device is formed in the semiconductor substrate and adjacent to the charge collection region and has a gate overlying and insulated from the semiconductor substrate and receiving a responsivity control signal. The readout circuit transfers the photocharge collected by the charge collection region of the photodetector to an output in response to a select signal. In another form, the pixel may be used in an image sensor having a pixel array of such pixels.

Abstract: There is described in one embodiment an indicia reading terminal having an image sensor pixel array incorporated therein, wherein the terminal is operative for decoding of decodable indicia and for providing color frames of image data for storage or transmission. An image sensor based terminal in one embodiment can include an image sensor having a hybrid monochrome and color image sensor pixel array wherein the image sensor pixel array includes a first subset of monochrome pixels and a second subset of color pixels. In one embodiment, an output response curve for the image sensor pixel array can include a logarithmic pattern.

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material adjacent to a photodiode in the plurality of photodiodes. A transfer gate is disposed to transfer image charge generated in the photodiode into the floating diffusion. A first electrical contact with a first cross sectional area is coupled to the transfer gate. A second electrical contact with a second cross sectional area is coupled to the floating diffusion, and the second cross sectional area is greater than the first cross sectional area. The image sensor also includes pixel transistor region disposed in the semiconductor material including a first electrical connection to the semiconductor material. A third electrical contact with a third cross sectional area is coupled to the first electrical connection to the semiconductor material, and the third cross sectional area is greater than the first cross sectional area.

Abstract: A semiconductor device includes a photodiode, a first transistor, and a second transistor. The photodiode has a function of supplying a charge corresponding to incident light to a gate of the first transistor, the first transistor has a function of accumulating the charge supplied to the gate, and the second transistor has a function of retaining the charge accumulated in the gate of the first transistor. The second transistor includes an oxide semiconductor.

Abstract: An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor device may include a second source follower transistor coupled to the switch, and a row selection transistor coupled to the first and second source follower transistors.

Abstract: An imaging device intended to be placed on board a satellite or an aircraft comprises at least two detector arrays that are arranged in the same focal plane. Each detector array itself comprises a unidirectional detector and at least one additional detector, produced on one same single-piece substrate dedicated to said detector array. The arrangement of the detectors in the focal plane is then carried out in a modular fashion, by positioning the respective substrates of the detector arrays. Several arrangements are proposed that are compatible with the unidirectional and bidirectional push-broom scanning modes.

Abstract: An image sensor includes a photoelectric conversion element in a substrate, a first storage region spaced apart from the photoelectric conversion element in the substrate, a gate on the first storage region, a light shielding layer covering the gate, a dielectric layer disposed between the gate and the light shielding layer and extending onto a top surface of the substrate, an interlayer insulating structure covering the light shielding layer, and a micro-lens overlapping with the photoelectric conversion element on the interlayer insulating structure. The light shielding layer includes a first portion covering a sidewall of the gate, and a second portion on a top surface of the gate. The first portion has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and the first thickness is greater than a second thickness of the second portion.

Abstract: Provided is a method for processing a semiconductor substrate to reduce line roughness, the method comprising: positioning a substrate in a film-forming system, the film-forming system comprising a chuck having a clamping mechanism configured to hold the substrate in a processing chamber and flex the substrate by displacing a center of the substrate relative to a peripheral edge of the substrate so as to create a concave surface during processing; coating the substrate with a layer of material; performing a post apply bake process; flexing the substrate to create the concave surface either during the post apply bake or following the post apply bake process, wherein the concave surface has a degree of concavity measured at the center of the substrate that exceeds a base number of microns; and unflexing the substrate and inducing tensile stress in the layer of material on the substrate.

Abstract: There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.

Abstract: The imaging device disclosed herein includes: a plurality of photodetection sections having a light-receiving face, the plurality of photodetection sections being disposed in a two-dimensional array along a first direction and along a second direction different from the first direction, such that the light-receiving faces of the plurality of photodetection sections constitute an imaging plane; a transparent layer; and a plurality of spectroscopic sections having a greater refractive index than the transparent layer and being disposed in a two-dimensional array in a plane of arrangement. Zeroth order diffracted light and ±first order diffracted light, derived from light transmitted through each spectroscopic section and a portion of the transparent layer neighboring the spectroscopic section, respectively enter distinct photodetection sections among the plurality of photodetection sections.

Abstract: A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm?3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.

Abstract: A semiconductor device includes: a photoelectric conversion section made of semiconductor; a color filter made of an inorganic material to which a metal ion is added; and a getter film formed between the photoelectric conversion section and the color filter and configured to trap the metal ion.

Abstract: A pixel circuit for a global shutter of a substrate-stacked image sensor may include a semiconductor chip including: a photodiode configured to output electric charges generated through a light sensing operation; and a reset node configured to receive a reset voltage from a reset voltage node and reset the photodiode. The semiconductor chip may have a structure in which the semiconductor chip is stacked over another semiconductor chip.

Abstract: Some demonstrative embodiments include devices and/or methods of gettering on silicon on insulator (SOI) substrate. For example, a complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) may include a plurality of pixels arranged on a wafer, a pixel of the pixels including: a silicon active area; at least one non-silicided leakage-sensitive component formed on the active area, the leakage-sensitive component is sensitive to metal contaminants; a non-leakage-sensitive area formed on the active area, the non-leakage-sensitive area surrounding the leakage-sensitive component; and at least one silicided gettering region formed on the non-leakage-sensitive area to trap the metal contaminants.

Abstract: There is provided a solid-state image sensor including a photoelectric conversion part which generates a charge corresponding to received light and accumulates the charge therein, a charge holding part in which before the charge accumulated in the photoelectric conversion part is transferred to a floating diffusion region, the charge is held for a predetermined time, a first transfer gate which transfers the charge accumulated in the photoelectric conversion part to the charge holding part, a second transfer gate which transfers the charge held in the charge holding part to the floating diffusion region, and a charge discharging gate which discharges the charge in the photoelectric conversion part. Before charge accumulation in the photoelectric conversion part for the next frame is started, part of the charge accumulated in the charge holding part is discharged.

Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.

Abstract: Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved.

Abstract: Provided is a solid-state imaging device including: a photodiode which converts an optical signal to signal charges; a transfer gate which transfers the signal charges from the photodiode; an impurity diffusion layer to which the signal charges are transferred by the transfer gate; and a MOS transistor of which a gate is connected to the impurity diffusion layer. The impurity diffusion layer has a first conduction type semiconductor layer and a second conduction type semiconductor layer which is formed in the first conduction type semiconductor layer and under an end portion of the transfer gate.

Abstract: Insulating layers can be formed over a semiconductor device region and etched in a manner that substantially reduces or prevents the amount of etching of the underlying channel region. A first insulating layer can be formed over a gate region and a semiconductor device region. A second insulating layer can be formed over the first insulating layer. A third insulating layer can be formed over the second insulating layer. A portion of the third insulating layer can be etched using a first etching process. A portion of the first and second insulating layers beneath the etched portion of the third insulating layer can be etched using at least a second etching process different from the first etching process.

Abstract: The performances of a semiconductor device are improved. A semiconductor device has a photodiode and a transfer transistor formed in a pixel region. Further, the semiconductor device has a second transistor formed in a peripheral circuit region. The transfer transistor includes a first gate electrode, and a film part formed of a thick hard mask film formed over the first gate electrode. The second transistor includes a second gate electrode, source/drain regions, silicide layers formed at the upper surface of the second gate electrode, and the upper surfaces of the source/drain regions.

Abstract: A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage.

Abstract: A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer.