Abstract: The invention relates to a substrate comprising a glass sheet (1) having a thickness which is smaller than or equal to 0.1 mm, the glass sheet (1) being provided with a layer of a synthetic resin material (2) having a thickness which is smaller than or equal to that of the glass sheet (1). This substrate proves to be flexible. In addition, the substrate cracks less easily, so that it can be processed more readily. The substrate may be used, for example, in light-emitting devices, such as a poly-LED or PALC.

Abstract: A solid-state image sensing device includes photoelectric conversion portions, vertical charge transfer portions, a horizontal charge transfer portion, an unwanted charge removing portion, and a potential barrier portion. The photoelectric conversion portions are arranged on an n-type semiconductor substrate. The vertical charge transfer portions are respectively arranged adjacent to the photoelectric conversion portions, and have a first p-type well layer and a first n-type semiconductor region. The horizontal charge transfer portion is arranged adjacent to one end side of the vertical charge transfer portions, and has a second p-type well layer and a second n-type semiconductor region. The unwanted charge removing portion is arranged adjacent to the horizontal charge transfer portion to remove an unwanted charge overflowing from the horizontal charge transfer portion. The unwanted charge removing portion has a third p-type well layer and a third n-type semiconductor region.

Abstract: A fast frame-rate CCD imaging device is produced by modifying the optical mask of an otherwise ordinary and inexpensive CCD integrated circuit to darken a majority of the active imaging photocells. The modified CCD integrated circuit is operated at near its maximum horizontal and vertical clock rates, but multiple image frames are newly defined within the one previous active photocell array field. The added dark areas in the optical mask act to protect all recent frames still in transit within the active array area from being double exposed and thus corrupted.

Abstract: An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field.

Abstract: A photodiode includes a semiconductor region (1, 7) having a first conductivity type (p or n type), an embedded layer (2) disposed in the semiconductor region (1, 7) and having a second conductivity type (n or p type) different from the first conductivity type (p or n type), and a leader (9) made of a semiconductor of the second conductivity type (n or p type). The embedded layer extends parallel to a surface (8) of the semiconductor region (1, 7). The leader extends from the surface (8) of the semiconductor region (1, 7) along the depth of the semiconductor region (7, 7) and is joined to a region of the embedded layer (2). The photodiode preferably has a base layer (11) made of a semiconductor of the second conductivity type (n or p type). The base layer (11) is held against the surface (8) of the semiconductor region (1, 7) and extends parallel to the surface (8) of the semiconductor region (1, 7). The base layer is isolated from the embedded layer (2) and electrically connected to the leader (9).

Abstract: P-type ion implantation is done in N well 15, so as to form a charge drain control layer 17 and form a photodiode N well 16 and OFD drain 5, the result being that, even if there is variation in the potential of the photodiode N well 16 making up the photodiode, because the variation in the potential of the charge drain control layer 17 is in the same direction as the potential of the photodiode N well 16, so that variation does not occur in the maximum amount of electrical charge that can be accumulated, the result being that there is no variation in the signal in the saturation condition.

Abstract: Method for fabricating a solid state image sensor, which can improve a charge transfer efficiency of an end terminal, including the steps of (1) providing a first conduction type substrate having a second conduction type well and a BCCD formed therein for an end terminal, (2) continuously increasing impurity concentrations in a region of the substrate in which a floating diffusion region is to be formed and in a portion of an area of other substrate in which the regions are are to be formed for improving a horizontal charge transfer efficiency, and (3) forming transfer gates, an output gate, and reset gate on the substrate, and the floating diffusion region and a reset drain region in the BCCD, respectively.

Abstract: A solid imaging device including a substrate voltage generating device possessing high display quality, high reliability, and method of manufacturing. The solid imaging device includes a plurality of photoelectric conversion elements, a vertical charge transfer portion for transferring the signal charges generated by the photoelectric conversion element, and a substrate voltage generating circuit. The substrate generating circuit 10 includes a variable resistor 11 formed by arranging a plurality of sets formed by selection switches 13 and resistors 14a-14e, and a load resistor 12 disposed by connecting with the variable resistor 11 between the source potential Vdd and the earth potential, and the substrate voltage Vsub is obtained from a contact between the variable resistor 11 and the load resistor 12. The selection switches 13 are consituted by antifuse elements.

Abstract: A solid state image sensing device comprises a cell area, located at a semiconductor substrate, including photoelectric conversion portions and charge transfer portions and a peripheral circuit area formed around the cell area located at the semiconductor substrate. The peripheral circuit area includes a first p.sup.+ -type semiconductor region and an insulating film with a relatively large thickness formed on the first p.sup.+ -type semiconductor region. The cell area further includes a second p.sup.+ -type semiconductor region and an insulating film with a relatively small thickness formed on the second p.sup.+ -type semiconductor region. The majority of the insulating film with the relatively large thickness is formed by means of a CVD process.

Abstract: Shunt wirings (12) in the form of a conductive light intercepting film which covers over vertical CCD registers and also serves to supply power, project into locations between adjacent photoelectric transducers (11) in the vertical direction, and the distance between the projecting portions of adjacent ones of the metal wirings is set to 0.2 .mu.m or less and is limited to a distance with which an electric field between adjacent ones of the metal wirings is 10.sup.7 V/cm or less and the adjacent metal wirings do not suffer from short-circuiting.

Abstract: This invention provides an element having a skimming charge transfer function in an X-Y address type photoelectric conversion device using, e.g., a CMOS sensor, and a photoelectric conversion device, which accumulates photoelectric signal charges produced by a photoelectric conversion element in a control electrode (gate) of a MOS transistor so as to obtain a signal with a high S/N ratio by removing signal components produced by background radiation without using any CCD as an accumulation means of skimming charges, has a skimming electrode for transferring skimming charges of those produced by the photoelectric conversion element, an n.sup.+ -type region for accumulating the transferred skimming charges, a MOS transistor for reading out potential changes caused by the skimming charges, and a circuit for automatically controlling the amount of skimming charges to be transferred.

Abstract: In a solid state image sensor unit which includes a substrate having a substrate surface and a plurality of first semiconductor regions formed on the substrate surface along a predetermined direction of the substrate surface with said first semiconductor regions substantially isolated electrically from each other. The solid state image sensor unit comprises a connection member formed on the substrate surface for supplying a reference potential to the first semiconductor regions in common.

Abstract: A solid state image sensor including a light-receiving section, a storage section, and a clock generator. The clock generator performs a first discharging operation for discharging noise charges in the light-receiving section, a first transferring operation for transferring the noise charges in a reverse direction from the storage to the light-receiving section, and a second discharging operation for discharging the noise charges transferred from the storage into the light-receiving section.

Abstract: A method for manufacturing a light receiving portion for a solid state image pickup device includes the steps of forming a well of a second impurity type on a substrate of a first impurity type, forming a channel stop within an upper surface of the well, forming a vertical CCD portion within the upper surface of the well, forming a gate insulating layer on the upper surface of the well, channel stop and the vertical CCD portion, forming a charge carrying gate electrode above the vertical CCD portion, forming a light receiving photo diode by ion-implanting impurities of the first impurity type, forming a first impurity layer on the light receiving photo diode by ion-implanting impurities of the second impurity type into a surface of the light receiving photo diode, removing a portion of the gate insulating layer above the light receiving photo diode, depositing an insulating layer containing impurities of the first impurity type on the gate insulating layer, the charge carrying gate electrode and the first imp

Abstract: A sensor device has a field oxide layer deposited over a substrate. The field oxide layer has opposing sharp edges that define a window. A sensor is formed in the window with a distance between the sensor and each sharp edge that defines the window. The distance forms a gap that reduces the effects of the sharp edges on the sensor, thereby reducing the current leakage from the sensor. In addition, a protective layer may be disposed over the distance and the sharp edges of the field oxide layer to further protect the sharp edges from damage that may be caused from further processing.

Abstract: A solid-state imaging device of a vertical overflow drain system according to the present invention includes a first conductive type semiconductor substrate, a second conductive type semiconductor well region formed on the first conductive type semiconductor substrate, and a first conductive type, second conductive type or intrinsic high-resistance semiconductor region formed on the second conductive semiconductor well region and having a lower concentration as compared with the second conductive semiconductor well region and a width enough for infrared ray to be sufficiently absorbed. A light receiving portion is formed on a surface of the first conductive type, second conductive type or intrinsic high-resistance semiconductor region.

Abstract: An active type photoelectric converting device includes: a transistor formed in a surface region of a semiconductor body, the transistor accumulating signal charges generated by light incident on the transistor at the surface region of the semiconductor body in the transistor, and outputting variation of an electric signal in response to variation of the accumulated signal charges; and a first gate region including a portion of the semiconductor body, a first insulating film formed on the portion of the semiconductor body, and a first gate electrode formed the first insulating film; the gate region, provided adjacent to the transistor, for transferring the accumulated signal charges from the surface region of the semiconductor body into an inside of the semiconductor body in response to a voltage applied to the first gate electrode.

Abstract: An imaging system is provided for imaging a scene to produce a sequence of image frames of the scene at a frame rate, R, of at least about 25 image frames per second. The system includes an optical input port, a charge-coupled imaging device, an analog signal processor, and an analog-to-digital processor (A/D). The A/D digitizes the amplified pixel signal to produce a digital image signal formatted as a sequence of image frames each of a plurality of digital pixel values and having a dynamic range of digital pixel values represented by a number of digital bits, B, where B is greater than 8. A digital image processor is provided for processing digital pixel values in the sequence of image frames to produce an output image frame sequence at the frame rate, R, representative of the imaged scene, with a latency of no more than about 1/R and a dynamic range of image frame pixel values represented by a number of digital bits, D, where D is less than B.

Abstract: In an active pixel sensor having a plurality of pixels, each of the pixels having a photodetector for accumulating charge from incident light, a transfer gate for removing charge from the photodetector, a floating diffusion that acts as a sense node to an amplifier input, and a drain the improvement comprising the provision of a reset mechanism for each pixel by application of a potential adjacent the floating diffusion such that the area between the floating diffusion and the drain becomes depleted.

Abstract: A charge-coupled device including, a light-receiving part having a glass and receiving an image, a photo chromic layer formed on the glass and being progressively colored according to a level of brightness of the image, to control an amount of transmitted light such that the amount of light transmitted for bright parts and dark parts of an image are substantially equalized, and a frame located on sides of the light receiving part.

Abstract: A thermal type infrared radiation solid state image pick-up device includes a temperature-electrical signal converting function element and a heat isolation structural body supporting the temperature-electrical signal converting function element. The heat isolation structural body is formed of a silicon oxide or a silicon nitride in porous structure. Since the heat isolation structural body has porous structure, heat flowing out from the heat isolation structural body depends on an actual area derived by subtracting the area of the holes from the area of the cross-section of the leg (nominal cross section). On the other hand, the mechanical strength of the heat isolation structural body relies on the area of the cross section of the leg. Therefore, for obtaining the photo sensitivity equivalent to that of the conventional heat isolation structural body, the cross sectional area of the leg can be made greater to improve mechanical strength thereof.

Abstract: A solid state imaging device according to the present invention includes a pixel transistor having a first electrode, a second electrode and a control electrode, a power supply terminal connected to the first electrode, a signal line connected to the second electrode, a reset bias terminal connected to the first electrode and the second electrode, a first switch connected between the power source terminal and the first electrode, a second switch connected between the reset bias terminal and the first electrode, and a reset switch connected between the reset bias terminal and the second electrode. The pixel transistor accumulates a charge corresponding to an amount of received light. The first switch is set in its off-state and the second switch and the reset switch are set in their on-states during a first period of a horizontal blanking period. Thereafter, a state of each of the first, second and reset switches is changed.

Abstract: In a solid state image pickup device including a semiconductor substrate, a photo/electro conversion element and a register formed within the semiconductor substrate, and an photoshield layer having a slit-type aperture for limiting light incident to the photo/electro conversion element, an optical element is provided for the slit-type aperture, to thereby pass polarized light having an electric field polarization face polarized in the longitudinal direction of the slit-type aperture.

Abstract: A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provided. A first p-type well and a second p-type well are formed on an N (100) silicon substrate. A vertical CCD n.sup.+ layer is formed in the second p-type well 3. Then, impurity ions are implanted into a surface layer of the N (100) silicon substrate including an upper layer portion of the vertical CCD n.sup.+ layer to form a p.sup.- layer. An isolating portion for isolating photodiode portions from the vertical CCD n.sup.+ layer and a read control portion for controlling the read of charges from the photodiode n layer are simultaneously formed on a portion adjacent to the vertical CCD n.sup.+ layer.

Abstract: A contact image sensor whose sensory elements have similar output levels is disclosed. The sensor includes: a first region consisting of a plurality of light sensory elements situated on a silicon wafer, the light sensory elements being separated from one another by an isolation material; an implanted region formed in the silicon wafer under the first region for preventing carrier from affecting the silicon wafer; a plurality of circuitry regions formed on a portion of the silicon wafer excluding the first region, the circuitry regions being separated from one another; and a light shielding region formed on the silicon wafer between the first region and the plurality of circuitry regions.

Abstract: A charge transfer image pickup device is disclosed. One embodiment of the device includes a plurality of photoelectric conversion elements for producing signal charges in response to light applied thereto. A vertical charge transfer part including a first region having a first well layer and for transferring the signal charges produced by the photoelectric conversion elements is provided. A horizontal charge transfer part including a second region having a second well layer and coupled to the vertical charge transfer part to receive transferred signal charges by using a terminal vertical transfer electrode of the vertical charge transfer part is also included. The first and second well layers partially overlap to form an overlap section that does not extend over the terminal vertical transfer electrode in the direction from the second region to the first region.

Abstract: By introducing an n-type drain implant substantially below the surface of the p-type substrate of a full frame image sensor, then enclosing the drain on the bottom and the sides with a deep p-type implant, and accumulating the surface with a shallow p-type implant, with all implantations performed through the same mask aperture, the blooming control, channel stop, and dark current suppression features of the imager are compressed, increasing the fill factor, facilitating pixel miniaturization, and therefore enabling high resolution imaging applications.

Abstract: An amplifying type photoelectric converting device is disclosed. The device includes: a semiconductor substrate of a first conductive type; a well portion of a second conductive type for accumulating signal charges generated by photoelectric conversion; a semiconductor region of the first conductive type provided in a region in the well portion; a first gate region including a first electrode; and a second gate region being adjacent to the first gate region and including a second electrode. An active element is formed between the semiconductor region and the semiconductor substrate, and a change in an operational characteristic of the active element which is generated by the signal charges is used as an output signal.

Abstract: Disclosed is a solid state image device which has a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impurity region which is selectively formed on the surface of a P(or N)-type semiconductor region at the surface of a semiconductor substrate, a CCD register for executing electronic scanning which is disposed in parallel to the row of photosensitive devices, and a read-out gate in which a signal charge is transferred from the photosensitive device to the CCD register, wherein a transparent Schottky electrode is formed on the first N(or P)-type impurity region except a portion adjacent to the read-out gate region, the Schottky electrode is electrically connected to a P.sup.+ (or N.sup.

Abstract: A light-emitting element 22 and a light-receiving element 26 are attached to a circuit board so as to oppose each other across the circuit board 2. As a result, light from the light-emitting element 22 arrives at the light-receiving element 26 via the substrate 2. Since the distance between the light-emitting element 22 and the light-receiving element 23 thus becomes very short, the light conversion efficiency is improved by a wide margin. Further, since the substrate 2 is interposed between the light-emitting element 22 and the light-receiving element 26, the elements are completely isolated within the insulation breakdown voltage of the material constituting the substrate.

Abstract: In order to eliminate film thickness nonuniformity of filters and to attain a cost reduction by simultaneously performing planarizing processes of a scribe region and a photoelectric conversion portion, in a color solid-state image pickup device which is separated into a plurality of color solid-state image pickup chips each of which consists of a photoelectric conversion portion and a peripheral circuit portion thereof formed on a semiconductor substrate, a portion of a scribe region for separating the structure on the semiconductor substrate into the color solid-state image pickup chips has a layer structure having the same layers as the photoelectric conversion portion. This invention is also applied to a chip array type color solid-state image pickup device which is constituted by arranging, on a semiconductor substrate, a plurality of color solid-state image pickup chips, each having an array of a plurality of photoelectric conversion portions.

Abstract: A CCD for detecting images includes a substrate, a well region formed on the semiconductor substrate, a horizontal CCD (HCCD) formed in the well region, a photodiode region formed in the well region at a prescribed spacing from the HCCD, a channel stop layer, an impurity diffusion layer which serves as a potential barrier region around the side and lower portions of the photodiode region so as to completely separate the photodiode region from the well region, a gate insulating layer formed on the substrate, a polygate formed on the gate insulating layer above the HCCD, an insulating layer formed on portions of the gate insulating layer, and a metal shielding layer formed on the insulating layer, whereby a smear phenomenum is prevented.

Abstract: A method and apparatus for reducing bloom in output of a charge coupled device (CCD) image sensor is disclosed. The method includes the step of toggling at least two phases of said CCD after exposure of said CCD. The method and apparatus are particularly useful when a flash of light occurs during the exposure.

Abstract: Photo-sensing elements are arranged in a form of a matrix, with photo-sensing characteristics substantially equal with each other in a row direction, but different therebetween in a column direction. Vertical charge transfer circuits receive charge signals in parallel from the photo-sensing elements, and transfer them as serial data therealong, respectively, to a horizontal CCD, which receives respective lowermost signals of the serial data from the vertical charge transfer circuits and transfers them as a serial data therealong, in which associated signals are substantially free of siginificant irregularities therebetween, so that the horizontal charge transfer circuit has an improved apparent charge transfer efficiency and an optimized drive amplitude, in addition to that a signal amplification in a data processor may be achieved with an optimized gain.

Abstract: A switched CCD electrode photodetector includes a substrate made of first semi-conductor type, a drain made of a second semi-conductor type formed in the substrate, a collection well made of the second semi-conductor type formed in the substrate, and a switched CCD electrode resistor formed between the drain and the collection well. The collection well is operable in cooperation with a photosensitive region. The switched CCD electrode resistor includes a channel region defined in the substrate and having a first end disposed adjacent to the collection well and a second end disposed adjacent to the drain. The switched CCD electrode resistor also includes a first electrode insulatively spaced from and disposed over the first end and a second electrode insulatively spaced from and disposed over the second end.

Abstract: A solid state image sensing device has a photoelectric transfer section for transducing incident light into signal charges, at least firs% and second charge transfer paths, a charge transferring section for transferring the signal charges from the photoelectric transfer section to the first path at a first timing and for transferring the signal charges transferred to the first path to the second path at a second timing and a charge supply section for applying bias charges to the signal charges to be transferred from the first to the second path. In the device, bias charges supplied to the first path is transferred to the second path. Signal charges are transferred to the first path and then to the second path. The signal and the bias charges both transferred to the second path are outputted.

Abstract: Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance.

Abstract: A device for producing an output voltage which is proportional to an applied magnetic field. The device includes a plurality charge injection regions, a corresponding plurality of charge exit regions, and a charge transfer region. The charge transfer region includes gate electrodes which serve to propagate at least one isolated charge packet across the charge transfer region in a predetermined direction from the charge input region to the charge output region. The charge packet is subject to the applied magnetic field which is perpendicular to the charge transfer region so as to induce a resultant potential that is orthogonal to both the applied magnetic field and the predetermined direction. Furthermore, the resultant potential effects a lateral redistribution of charge carriers in the packet. A recirculation configuration allows for a recycling of the packet from the output region back to the input region in order to accommodate a continuation of the redistribution of charge carriers.

Abstract: The present invention is directed to methods and apparatus for accurately detecting light energy of a signal of interest (e.g., a laser pulse) even when the signal-to-noise ratio is relatively low. The present invention is further directed to accurate detection of a signal of interest even when either or both the signal of interest and background illumination vary across plural pixels of an imaging an array. For example, a signal of interest can be accurately detected even in the presence of pixel response non-uniformity and fixed pattern noise, or when the incident signal of interest is not confined laterally to a single pixel.

Abstract: A solid-state imaging device that enables correction of the shading phenomenon effectively without overall sensitivity reduction. This device contains pixels arranged in an array to form an image area, photodetectors for detecting incident light to generate signal charges, and charge transfer devices for transferring the signal charges generated in the plurality of photodetectors. Each of the pixels contains one of the photodetectors and one of the charge transfer devices. The sensitivity of the photodetectors varies according to placement of the photodetectors in the image area, so that the sensitivity has a distribution that cancels nonuniformity of the incident light in the image area. The sensitivity of the photodetectors is preferably distributed concentrically with the center of the image area.

Abstract: A solid state image sensing device, comprises: an n-type semiconductor substrate (11), a p-type well (12) formed on a surface of the semiconductor substrate, and a p.sup.+ -type diffusion layer (13, 21) having an impurity concentration higher than that of the well. In particular, the P.sup.+ -type diffusion layer (13) is formed so as to cover at least a part of circumference of an n-type diffusion layer (17) of a load transistor (N3) formed in the well (12) as a source follower circuit. Instead, the P.sup.+ -type diffusion layer (21) is formed between the n-type diffusion layer (17) of the load transistor (N3) and the semiconductor substrate (11).

Abstract: In an imaging apparatus using a semiconductor imaging device formed of CCDs, light from an object to be imaged is fed to the imaging device selectively by the operation of a light generator. Charges produced by photoelectric conversion elements of the imaging device are read out as an image signal. A control apparatus operates on the light generator and imaging device so that at least one light pulse is fed to the imaging device within one imaging period in which charges are read out of the photoelectric conversion elements to produce an image field. The resulting image signal does not include image fields that have been produced without illumination, and image fields based on a uniform illumination can be obtained.

Abstract: The present invention is directed to providing a charge-coupled device which can provide accurate signal detection while providing high speed electronic exposure control or shuttering. Exemplary embodiments can maintain charge transfer efficiency at a relatively high level even if a pixel array of the charge-coupled device is clocked rapidly (i.e., exposure control or shuttering speed is increased) for a given pixel pitch.

Abstract: A solid state image sensor device having an effective light detecting element and a peripheral circuit includes a light-shielding film for shielding a periphery of the effective light detecting element, a first wiring film made of the same material as that of the light-shielding film and formed in the same process as that for the light-shielding film, and a second wiring film of aluminum for the peripheral circuit. The first wiring film and the second wiring film form a two layer wiring structure of the peripheral circuit and are electrically interconnected through contact holes in an interlayer insulating film. With this arrangement, it is possible to lower the wiring resistance for the peripheral circuit and also to cause a signal transfer clock pulse of high-frequency to propagate without its waveform becoming dull.

Abstract: A device and a method for interrupting the continuity of a conductor and linking a pair of conductors are disclosed. The device is a three-terminal fuse having first and second terminals initially connected by a conductor and a third terminal separated from the conductor at a breakpoint of the conductor by an insulator. By applying a voltage across the third terminal or control terminal and the conductor, a transient conductive link is formed between the conductor and the control terminal. If sufficient current is provided through the transient link, heating of the link causes the metal of the conductor to melt and boil away, thus interrupting the continuity of the conductor.

Abstract: A solid image pick-up element has a pixel region, an output region located near the pixel region, and a field portion located remote from the pixel region, all of which are formed at un upper layer of a semiconductor substrate. The pixel region is provided with plural rows of light receiving portions for performing photoelectric conversion with respect to light received thereby. Between the plural rows of the light receiving portions are interposed transfer portions for transferring signals obtained through the photoelectric conversion. The output region is provided with an output portion for outputting the signals transferred from the transfer portions. The semiconductor substrate is covered with three dielectric films, and an opening is formed through two dielectric films at a location above the output portion.

Abstract: A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer.

Abstract: Photoelectric converting parts and vertical CCD register parts are formed in a semiconductor substrate. Polysilicon electrodes are formed on the vertical CCD register parts. On the polysilicon electrodes, polysilicon oxide film and dielectric film are deposited. On the polysilicon electrodes, contact windows are formed by mask matching and etching. The contact windows are formed in the first polysilicon electrode and second polysilicon electrode so as to realize four-phase drive of the solid-state image pickup device. Polysilicon film and tungsten silicide film are formed thereon. By etching these films, a first wiring is formed. A second wiring of aluminum film is formed thereon through an interlayer dielectric film. Hence, a high transfer efficiency and a favorable smear noise characteristic are presented at low illumination.

Abstract: A light shield for a back-side thinned CCD has an aluminum reflective layer over the imaging surface of the CCD with a vanadium barrier layer between the aluminum reflective layer and the imaging surface. An optional oxide layer may be formed between the reflective and barrier layers.

Abstract: A solid state imaging apparatus which prevents occurrence of small aperture fading by diffraction of light and can control the amplitude level of an image signal within a prescribed range. The solid state imaging apparatus employs a solid state imaging element such as a CCD. When the level of an image signal outputted from the solid state imaging element exceeds a predetermined value, a driving motor is driven to effect adjustment of an iris. The capacitance of a variable capacitance diode provided in a voltage converting section of the solid state imaging element is controlled in accordance with the amplitude level of the image signal to control the voltage conversion efficiency of the voltage converting section of the solid state imaging element so as to fix the level of the image signal.