Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Abstract: A color optimized CMOS photodiode pixel array is provided. The pixel array employs different dimensions to take advantage of different characteristics of the photodiode physics to produce an enhanced image while minimizing the need for post processing. The design includes a relatively shallow blue pixel photodiode, a deeper green pixel photodiode, and a relatively deep red pixel photodiode. The red pixel photodiode is larger and deeper than the green pixel photodiode, which is larger and deeper than the blue pixel photodiode. Each color pixel photodiode comprises a junction diode and a depletion region. The CMOS construction of the three color pixel photodiodes may vary, but one possible construct of the red pixel photodiode would be an N Well/P Sub diode construct, the green pixel photodiode a N+/P Sub diode construct, and the blue being a N+/P Well or N+/P Sub diode construct.

Abstract: A vertical color filter detector group according to the present invention is formed on a semiconductor substrate and comprises at least six layers of alternating p-type and n-typed doped regions. PN junctions between the layers operate as photodiodes with spectral sensitivities that depend on the absorption depth versus wavelength of light in the semiconductor. Alternate layers, preferably the n-type layers, are detector layers to collect photo-generated carriers, while the intervening layers, preferably p-type, are reference layers and are connected in common to a reference potential referred to as ground. Each detector group includes a blue-sensitive detector layer at an n-type layer at the surface of the semiconductor, a green-sensitive detector layer at an n-type layer deeper in the semiconductor, and a red-sensitive detector layer at the n-type layer deepest in the semiconductor.

Abstract: A frame transfer-type solid imaging device is provided, which can be operated without reducing the transfer efficiency or the transfer charge quantity. A plurality of N-type regions 5 constituting photoelectric conversion regions and a plurality of P+-type regions 6 constituting channel stop regions are formed on a P-type silicon substrate 4, and a transparent electrode 1 is further formed through an insulating film 7 on the substrate 4. The thickness of the transparent electrode at a portion above the photoelectric conversion region is made thinner than the thickness of the other part of the transparent electrode 1, and an antireflection film 8 is formed above the photoelectric conversion region 2.

Abstract: An image pickup device is provided with a reduced profile. There is provided a circuit board that is formed with a predetermined circuit pattern having bonding portions and which has a through hole, a pickup element that has a light-receiving portion and bonded portions and which is secured to one surface of the circuit board by bonding the bonded portions to the bonding portions of the circuit pattern, and a cover body which has a lens portion for guiding incident light to the light-receiving portion of the pickup element through the through hole of the circuit board and that is secured to another surface of the circuit board opposite to the above-mentioned surface such that the through hole is covered.

Abstract: The present invention provides a solid-state image sensor wherein the color shading is decreased, and/or a solid-state image sensor wherein the shading effect is outstanding. Moreover, the invention provides a digital camera having the solid-state image sensor. The solid-state image sensor of the present invention has color filters and/or apertures of a light blocking layer, and the center of the color filters and/or the center of the apertures of the light blocking layer is offset with respect to the center of a light-receiving part, in the direction to the center of a valid cell area. In each photodetecting cell of a preferred solid-state image sensor, micro-lenses are further placed on the light-receiving side of the solid-state image sensor, and preferably, the center of the micro-lens is similarly offset with respect to the center of the light-receiving part. Also, the digital camera is mounted with an above-described solid-state image sensor.

Abstract: A solid-state imaging device having contacts for a charge sweeping component or the like, with which increases in dark current can be suppressed while increases in contact resistance and the production of alloy spikes can be prevented, and a method for manufacturing this device. A solid-state imaging device has a charge accumulator for producing and accumulating signal charges when light is received, and a charge transfer component for transferring these signal charges, including a conductive layer 18 formed on a substrate 10, such as a silicon layer or metal wiring; an insulating film 21 formed over the conductive layer 18; an opening CH formed over the insulating film 21 and leading to the conductive layer 18; and a wiring layer 34 composed of aluminum containing copper in an amount between 0.4 and 5 wt %, formed at least inside the opening CH contiguously with the surface of the conductive layer 18.

Abstract: A solid image pickup device that can be operated at high speed and can suppress the dark current with high sensitivity, and a process for producing the same are provided. The solid image pickup device comprises a shunt wiring layers 7a and 7d of the transfer electrodes are formed with an accumulated film of a high melting point metal 13 and a nitride or an oxide of a high melting point metal 14. The solid image pickup device is produced by the process comprising a step of forming, on transfer electrodes 3a and 4b, shunt wiring layers 7a and 7d comprising an accumulated film comprising a nitride layer or an oxide layer of a high melting point metal 14 having a high melting point metal layer 13 formed thereon, and a step of conducting, after forming a dielectric film 36 to have a concave part on a sensor 2, a heat treatment at a temperature of from 800 to 900° C.

Abstract: There is provided a solid state imaging device using a MOS image sensor of a threshold voltage modulation system employed in a video camera, an electronic camera, an image input camera, a scanner, a facsimile, or the like. In configuration, in the solid state imaging device that comprises a photo diode formed in a second semiconductor layer 15a of opposite conductivity type in a first semiconductor layer 12 and 32 of one conductivity type, and a light signal detecting insulated gate field effect transistor formed in a fourth semiconductor layer 15b of opposite conductivity type in a third semiconductor layer 12 of one conductivity type adjacently to the photo diode, a carrier pocket 25 is provided in the fourth semiconductor layer 15b, and a portion of the first semiconductor layer 12, 32 under the second semiconductor layer 15a is thicker than a portion of the third semiconductor layer 12 under the fourth semiconductor layer 15b in a depth direction.

Abstract: A photo sensor has a first silicon chip and a second silicon chip mounted on the first silicon chip. Photodiodes are formed in an upper surface portion of the second silicon chip to transform light into electric signals, and circuit elements such as a transistor are formed in an upper surface portion of the first silicon chip to form a signal processing circuit, which manipulates the electric signals from the photodiodes. A metallic thin film is provided on the lower surface of the second silicon chip to cover the circuit element as a shielding film.

Abstract: An active pixel cell includes electronic shuttering capability. The cell can be “shuttered” to prevent additional charge accumulation. One mode transfers the current charge to a storage node that is blocked against accumulation of optical radiation. The charge is sampled from a floating node. Since the charge is stored, the node can be sampled at the beginning and the end of every cycle. Another aspect allows charge to spill out of the well whenever the charge amount gets higher than some amount, thereby providing anti blooming.

Abstract: An improved data receiver gain enhancement is obtained in circuit by having a V/I converter and an amplifier stage, by placing a passive filter between in converter and amplifier stage. Amplification of certain parts of the signal, more than other parts can be obtained, depending on the characteristics of the filter.

Abstract: A detector with a transistor sensitive to electromagnetic energy. In accordance with the present teachings, the transistor is biased such that the output thereof is responsive to the electromagnetic energy. The inventive imager includes an array of the novel detectors. Each of the detectors being an n-channel metal-oxide semiconductor transistor with a floating body. The transistors are biased for selective activation and sequential readout. The transistor outputs are read by a differential current sense amplifier. A color filter is disclosed to provide a color sense capability. As an alternative, a grating is provided for this purpose. The present invention allows a very dense imager to be built on using conventional silicon on sapphire or silicon on insulator complementary metal-oxide semiconductor processes. The use of standard CMOS processes allows for low manufacturing costs.

Abstract: A high aperture active matrix liquid crystal display (AMLCD) includes pixel electrodes in respective pixels which overlap adjacent address lines. The color filters are formed on the active substrate in a manner such that the filters also overlap the address lines and function as an insulating layer between the pixel electrodes and address lines in the areas of overlap. Accordingly, line-pixel capacitances are reduced and the resulting AMLCD is easier to manufacture. The total number of process step in manufacturing is reduced, and plate-to-plate (active to passive plate) alignment is much easier and less important.

Abstract: A solid-state imaging device comprises: a semiconductor substrate which demarcates a two-dimensional surface; a multiplicity of photoelectric conversion units configured in a multiplicity of rows and columns on the surface of said semiconductor substrate; a light shielding film having openings formed above said semiconductor substrate, each of the openings is formed on each of said photoelectric conversion unit; a planarizing insulating film formed on said light shielding film; micro lenses formed on said planarizing insulating film, each micro lens is formed just above each of said opening; and a modifying film having one layer or a plurality of layers formed directly on said micro lenses and having a top surface with different curvature from that of a top surface of the micro lenses.

Abstract: A thin film semiconductor device comprising an insulating substrate, a plurality of thin film transistors integrated on the insulating substrate, each thin film transistor including a gate electrode, a gate insulating film, a semiconductor thin film and an interlayer insulating film which are laminated in this order from the lower side, and the semiconductor thin film being formed with a channel region confronting the gate electrode, and a source region and a drain region which are located at both sides of the channel region, and a conductor film which is formed on the surface of the interlayer insulating film so as to be overlapped with the channel region. A display device having a pair of insulating substrates, electrooptical material held in the gap between the insulating substrates, a counter electrode formed in one of the insulating substrates, and a plurality of pixel electrodes and a plurality of thin film transistors which are integrated on the other insulating substrate.

Abstract: An insulating substrate and a scanning circuit region are provided on a semiconductor device. The scanning circuit region is provided with a switching transistor for outputting charge formed on the insulating substrate and a clock wiring determining switching timing of the switching transistor. A shield conductor member is provided below the scanning circuit region.

Abstract: Solid state image sensor having photodiode regions for converting optical image signal into an electrical signal and charge coupled device regions for transferring video charges generated in the photodiode regions in one direction, including first microlens layers spaced from one another and formed over the photodiode regions to be opposite thereto for focusing lights onto the photodiode regions, and second microlens layers formed of a material having a refractive index greater than the first microlens layers on an entire surface of the first microlens layers for focusing lights incident to edge portions of the first microlens layers and spaces between the first microlens layers onto the photodiode regions.

Abstract: For providing a photoelectric conversion device that can prevent radiation noise by a low-cost and simple mounting method, the photoelectric conversion device having a photoelectric conversion element is provided in which a conductive member such as a thin metal sheet is stuck on the photoelectric conversion element.

Abstract: An improved focusing and color-filtering structure is provided for use in a semiconductor light-sensitive device, such as CMOS (complementary metal-oxide semiconductor) light-sensitive device, that can be used, for example, on a digital camera or a PC camera to convert photographed image directly into digital form. The focusing and color-filtering structure is used for the focusing and color-filtering of the light incident thereon prior to the light being detected by the light-sensitive device. The focusing and color-filtering structure is characterized in the forming of a dummy pattern layer in the non-filter area surrounding the array of color-filter layers, which allows the subsequently formed planarization layer to be highly planaized with a substantially uniformly flat top surface without having slopes such that the subsequently formed microlenses can all be disposed upright in position without being slanted.

Abstract: An insulating substrate and a scanning circuit region are provided on a semiconductor device. The scanning circuit region is provided with a switching transistor for outputting charge formed on the insulating substrate and a clock wiring determining switching timing of the switching transistor. A shield conductor member is provided below the scanning circuit region.

Abstract: A CMOS image sensor fabrication method that is capable of preventing a surface of a metal line from being damaged or contaminated is provided. The formed CMOS image sensor includes: a semiconductor structure, wherein the semiconductor structure includes a unit pixel area and a pad area; a metal line formed on the pad area, wherein a portion of the metal line is exposed; a passivation layer formed on the unit pixel area and on the metal line such that the exposed portion is left exposed; a planarized photoresist formed on a portion of the passivation layer; a micro-lens formed on a portion of the planarized photoresist; and an oxide layer formed on the entire formed structure such that the exposed portion is left exposed.

Abstract: The present invention relates to a CMOS active pixel sensor which includes a compensation circuit capable of compensating a lowered pixel voltage output due to leakage current of a photodiode. The CMOS active pixel sensor having a light sensing unit for generating an output voltage when light is incident thereupon, the sensing unit having an amount of leakage current before the incidence of light. A reset unit resets the output voltage of the light sensing unit to an initial reset voltage in response to a reset signal. A sense transistor has a source, a drain coupled to a power source voltage, and a gate coupled to the output of the light sensing unit. A select transistor has a drain connected to a source of the sense transistor, and provides the voltage of the sense transistor to a bit line, in response to a select signal. A compensation unit supplies a voltage corresponding to the output voltage of the light sensing unit lowered by the leakage current.

Abstract: An embodiment of the invention is a semiconductor die having a number of photodetecting sites that are part of a color image sensor. A number of microlens structures are provided, each positioned above a respective one of the photodetecting sites. A color filter layer is formed above the microlens structures. No passivation layer is formed between the microlens structures and a top metal layer of the die. The die may be used as the eye of an electronic system such as a digital camera.

Abstract: A high-concentration light-receiving N-layer 32 is formed by ion implantation in a region near a substrate surface, and a low-concentration N-type epitaxial layer 25 is formed by epitaxial growth in a deeper region. The depletion layer of a photodiode is thus expanded to a deep portion of the substrate by the low-concentration N-type region 25, by which a photoelectric conversion effect on incident light of a long wavelength is increased to improve sensitivity. In the above stage, a deepest potential portion is formed on the substrate surface side. Therefore, a depletion voltage can be prevented from rising. Further, an intermediate-concentration N-type epitaxial layer 23 and a high-concentration N-type epitaxial layer 22 are formed in a stack of two layers by epitaxial growth in a region deeper than a region in which a first P-type layer 24, or a barrier region is formed, by which a shutter voltage can be prevented from rising.

Abstract: A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion.

Abstract: Photoelectric conversion chips having the same structure are disposed in line and electrically connected together to constitute a multi-chip type image sensor. The gate of a load transistor of a source follower circuit of each of the photoelectric conversion chips is connected in common to one constant current source circuit. The constant current source circuit and photoelectric conversion chips are mounted on a substrate. With this structure, the common current source circuit is used for all the source follower circuits so that noises will not be generated on the photoelectric conversion chip unit basis. The multi-chip type image sensor can therefore improve the image quality, and horizontal or vertical stripes to be caused by noises otherwise generated in separate constant current source circuits can be removed.

Abstract: Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from the photo-diodes, the solid state image sensor including: an insulating layer forming on the whole surface of the semiconductor substrate and having a contact hole exposing a defined portion of the transfer gates; a metal line formed to include the inside of the contact hole; and a light-shielding layer formed in the same layer with the metal line without overlapping the upper parts of the photo-diodes.

Abstract: A method of shielding light from rows and columns of an array of pixels of a CMOS image sensor includes the steps of: providing a first layer of metal shielding above the rows and columns of the array; and providing a second layer of metal shielding above the first layer. The method further includes forming slots within each of the first and second layers of metal shielding, such that the slots of the first layer are misaligned with the slots of the second layer. A light shield for shielding columns and rows of an array of pixels in a CMOS image sensor includes a first metal layer located above the columns and rows of the array, and a second metal layer located above the first metal layer. Each of the first and second metal layers includes slots. The slots are formed such that the slots of the first layer are misaligned with the slots of the second layer.

Abstract: The making and use of color microlenses in color image sensors and color display devices is described and claimed. The color microlenses combine the function of a colorless microlens and a color filter into a single structure simplifying the fabrication of, and increasing the reliability of display devices and image sensors using the described color microlenses.

Abstract: A phase shift mask and a fabrication method thereof are used in a semiconductor light exposing process, where a CD (Critical Dimension) formed on a wafer is the same in all directions, even when a pattern is arranged on the mask at an anisotropic pitch. The phase shift mask includes a number of light transmitting regions and first and second phase shift regions arranged among the light transmitting regions. The first and second phase shift regions have a refractive index different from that of the light transmitting region. The first and second phase shift regions also have a transmittance different from each other.

Abstract: A CCD assembly comprising: a semiconductor chip having a first face surface; an active light sensitive region located on the first face surface; an inactive region located on the first face surface next adjacent the active region; and a nonreflective coating applied over at least a portion of the inactive region.

Abstract: A solid-state imaging sensor, a method for manufacturing the solid-state imaging sensor and an imaging device of which said solid state image sensor is designed to reduce unwanted light reflections, improve light focusing of light reflections from the substrate and oblique light constituents onto the sensor in order to allow further reduction in pixel size. Transfer electrodes in a line shape are arrayed at spaced intervals on a substrate, discrete sensors for photo-electric conversion are formed between the transfer electrode lines, a light-impervious film consisting of a first and second light-impervious films with an aperture positioned directly above a sensor is formed on the substrate and covers the transfer electrode to block any incident light other than the beam of light R from entering the sensor, and an on-chip lens for focusing the light R onto a sensor is formed above the light-impervious film.

Abstract: A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.

Abstract: Solid state image sensor and method for fabricating the same, which can provide the same focal distances of lights incident to a photodiode through a microlens for improving a sensitivity of a CCD, the solid state image sensor including photodiode regions for generating video charges from incident lights, and charge coupled devices each formed between the photodiodes for transferring the video charges in one direction, wherein impurity ions are implanted in a portion of each of microlenses formed over, and one to one matched to the photodiode regions for varying a refractive index.

Abstract: This invention provides a semiconductor device including a silicon layer, an insulating layer formed on the silicon layer, a first semiconductor device formed on the insulating film to convert light into an electric signal, and a second semiconductor device formed on the insulating film, wherein a silicon region is formed in the silicon layer to shield the second semiconductor device from light, and a through hole extending through the silicon layer except for the silicon region to input light to the first semiconductor device is formed in that portion of the silicon layer corresponding to the lower portions of the first and second semiconductor devices.

Abstract: An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon which incident light will form photoelectrons to be collected as a signal charge; a device for transferring the signal charge from the photodetector region to a charge storage region that is covered by a light shield; a sense node that is an input to an amplifier; the sense node being operatively connected to the signal storage region. The pixel architecture facilitates symmetrical design of pixels which allows for incorporation of light shield and microlens technology into the design.

Abstract: Thin film spatial filters are disclosed. The filters are constructed with a continuous thin film of low resistance conductor (for example with a resistance of from 10−2 to 108 Ohms-cm) with plurabilty of resistive elements defining pixels. A thin film of high resistance material is on other side of the pixels in the case of grounded filters. The conductor film provides lateral blurring for image processing.

Abstract: A distributed photodiode structure is shown having a plurality of diffusions formed in a uniform pattern on a first surface of a semiconductor substrate and interconnected by a plurality of connective traces. The diffusions are minimum geometry dots for a standard semiconductor fabrication process that are spaced apart from one another by an interval that is less than an average distance travelled by photo-generated carriers in the substrate before recombination. A conductive backplane is formed on a second surface of the semiconductor substrate to produce an inverted induced signal for noise cancelling.

Abstract: An image forming system utilizing a light emitting diode (LED array) having LEDs arranged along a curved line. The LEDs are either edge emitting type LEDs or surface emitting type LEDs. The LEDs of the LED array emit light towards a center or optical axis of the lens. A plurality of lenses are connected together to form a lens array. Alternatively, two lens arrays can be utilized. If two lens arrays are utilized, each of the lenses in the lens array includes an aspherical surface. The curved LED array prevents the flaring of light and produces an even pattern of light emission on a light receiving surface such as a photoconductive drum.

Abstract: An active CMOS pixel or pixel array and method for manufacturing uses silicides to improve sheet conductivity of polysilicon and diffusions and for improved conductivity of silicon to metal connections without downgrading the photon sensing performance of the pixels. Masks are used in manufacturing of the pixels by selectively masking photon sensors from the optical opaqueness of silicides and photon sensor related circuit elements from silicide induced photon sensor dark current leakage while allowing formation of silicides for providing highly conductive contacts between. Silicides are used for improving the sheet conductivity of polysilicon and diffusions in the readout transistors and for improved conductivity of silicon to metal line connection pads.

Abstract: A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.

Abstract: The blue signal of a CMOS-based color pixel is increased with respect to the red and green signals by lowering the doping concentration of the surface regions of the pn-junction photodiodes that are used in the blue imaging cells with respect to the surface regions of the pn-junction photodiodes that are used in the red and green imaging cells.

Abstract: A solid state image sensor according to the present invention includes a p-type conductivity type well formed in a surface of an n-type conductivity type semiconductor substrate in which a photoelectric conversion region is defined. A photoelectric conversion device (i.e., photodiode) is formed of a PD-N region and a PD-P region in a surface of the p-type conductivity well in the photoelectric conversion region, for converting a signal of light to an electrical signal. A vertical charge transfer region is formed in a surface of the p-type conductivity well in which the photodiode is not formed, and a channel stop layer is formed in a surface of the p-type conductivity well around the PD-N region except for a region between one side of the photodiode and the vertical charge transfer region. A gate insulating film is formed on the semiconductor substrate except for the photodiode, and a transfer gate is formed on the gate insulating film.

Abstract: There is provided a semiconductor device which can readily detect a desired position. The semiconductor device comprises a semiconductor substrate (12) and a plurality of pixels (2) which are identical in appearance on the semiconductor substrate (12). Of the pixels (2), pixels (2) selected by a predetermined rule are provided with mark patterns (4) and the remaining pixels are provided with no mark pattern.

Abstract: A solid state image pickup device including implanting impurity ions into a planarizing layer and/or a microlens layer thereon for changing a refractive index thereof, and method for fabricating such a device. The planarizing layer and the microlens layer are formed over components of the solid state image pickup device including a plurality of photoelectric conversion regions and charge coupled device (CCD) regions, each charge coupled device transferring an image charge generated in the photoelectric conversion regions in one direction.

Abstract: A CMOS sensor structure and method of manufacture that includes the fabrication of a special shallow trench isolation structure. Besides isolating the active region for forming the CMOS sensor device, the shallow trench isolation structure has a special reflective plug embedded inside capable of reflecting incoming light onto the sensitive region of the CMOS sensor. Hence, the interactive length of incoming light with the light sensitive region can be increased, thereby increasing the contrast ratio and light sensitivity of the CMOS sensor.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Abstract: A composite-layer semiconductor device includes a gate above a host substrate, an n++ contact layer above the gate, and source and drain ohmic contacts applied to the n++ contact layer. The source and drain ohmic contacts define a central gate location which is recessed through the n++ contact layer toward the gate. The source and drain ohmic contacts create a barrier to chemical etching so that a current path below the central gate location can be incrementally recessed in repeated steps to precisely tailor the operating mode of the device for depletion or enhancement applications. The composite-layer semiconductor device is fabricated by depositing a gate on an n++ contact layer above a semi-insulating substrate. The semi-insulating substrate and gate are flipped onto an epoxy layer on the host substrate so that the gate is secured to the epoxy layer and the semi-insulating substrate presents an exposed backside. A portion of the exposed backside is removed.

Abstract: A photo diode and a signal processing circuit are formed on a silicon substrate. The signal processing circuit comprises a PNP transistor and an NPN transistor. A region of the signal processing circuit on the silicon substrate is covered by an aluminum thin film functioning as a shielding film. A covered distance L(.mu.m) is defined as an overhang of the aluminum thin film from the edge of the PNP transistor, and is determined based on a ratio of a minimum current of the PNP transistor, which induces malfunction in the signal processing circuit under the solar radiation, to a current generated in the circuit element when subjected to the solar radiation without the aluminum thin film.