Abstract: An image sensor may comprise photodiodes on a semiconductor; color filters on the photodiodes; a planarization layer covering the color filters; and microlenses on the planarization layer, including alternate hydrophilic microlenses and hydrophobic microlenses contacting the edges of the hydrophilic microlenses, corresponding to respective color filters.

Abstract: A photoelectric conversion device is provided, in which pixels are arranged in an array. Each of the pixels includes a light receiving region, transistors, and an insulation film. The insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A reflection prevention film is arranged at least above the light receiving region, with the insulation film being arranged between the reflection prevention film and the light receiving region, and has a silicon nitride film. An interlayer insulation film is arranged on the reflection prevention film, and a second reflection prevention film is laminated between the reflection prevention film and the interlayer insulation film.

Abstract: A method for fabricating a CMOS image sensor forms silicon nitride (SiN) layer on a pad. Microlenses, having a minimum height and footprint according to a desired packing density of the lenses, are fabricated of an oxide film and a nitride film deposited on the silicon nitride. Since the lenses have a low height, a refractive index of the lenses may be improved. A sidewall spacer type inner lens may be additionally formed below a main lens curvature to aid in overcoming problems caused by a single-lens structure.

Abstract: A solid-state image sensing device having an effective pixel area and an optical black area disposed on one principal surface of a substrate, includes photoelectric converter elements, a wiring part containing a plurality of wiring layers disposed on the one principal surface of the substrate, in which in the optical black area more wiring layers are disposed than in the effective pixel area, an interlayer dielectric disposed between, among the plurality of wiring layers, a topmost first wiring layer and a second wiring layer disposed beneath the first wiring layer, a passivation film disposed on the interlayer dielectric in the effective pixel area and disposed on the first wiring layer in the optical black area, and inner lenses disposed at least at positions on the passivation film that corresponds to the effective pixel area, a thickness of the passivation film being equal to or less than a thickness of the first wiring layer.

Abstract: A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.

Abstract: An active pixel sensor of the present invention includes photo diodes with at least five side such as six sides arranged in a honeycomb structure with sharing of a floating diffusion (FD) region for increased fill factor. In addition, with sharing of transistor devices by multiple photo diodes, the fill factor is advantageously maximized.

Abstract: A pixel comprises a substrate comprising a first well region formed in a top portion of the substrate, having a first conductivity type. A plurality of shallow trench isolation (STI) structures is formed in the first well region of the substrate, defining a pixel region over the substrate. A second well region is formed in a potion of the first well region of the pixel region, having a second conductivity type opposite to the first conductivity type. A top surface region is formed in a top portion of the second well region, having the first conductivity type. A MOS transistor formed on portions the pixel region, having a pair of source/drain regions formed in the first well region, wherein the source/drain regions are formed of the second conductivity type and one thereof electrically connects the first and well doping regions and the first well region is formed with a depth greater than that of the adjacent STI structure.

Abstract: The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device (BSI).

Abstract: The present invention discloses an image sensor and a method for manufacturing the same which is capable of increasing the light-collection efficiency of a photodiode. The image sensor comprises: at least one photodiode formed on a semiconductor substrate; multilayer interlayer insulating films formed on the photodiode and stacked in at least two layers so that the density of the upper interlayer insulating film becomes lower than that of the lower interlayer insulating film as the multilayer interlayer insulating films proceed upward; a light shield layer and an element-protecting film sequentially stacked on the multilayer interlayer insulating film; color filter arrays and a flattening layer sequentially stacked on the element-protecting film; and microlenses arranged on the positions corresponding to the color filters on the flattening layer.

Abstract: In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure.

Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

Abstract: The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.

Abstract: The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.

Abstract: Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

Abstract: In one embodiment, the method includes forming a first dielectric layer over a substrate, and removing a portion of the first dielectric layer over a photoactive region of the substrate to form a concavity in the first dielectric layer. An inner lens and etch stop layer are formed over the substrate simultaneously. The inner lens fills the concavity in the first dielectric layer, and the etch stop layer covers the inner lens and extends over the first dielectric layer. A second dielectric layer may be formed over the inner lens and the etch stop layer. The second dielectric layer may be formed of a different material than the etch stop layer. A cavity may be formed in the second dielectric layer over the inner lens.

Abstract: Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager array. In the resulting structure, the conserved sections absorb incident light. The patterned portions of conserved material provide additional light shielding for array pixels.

Abstract: A method of fabricating a high-sensitivity image sensor and the same are disclosed. The disclosed method comprises: etching predetermined regions of active silicon and a buried oxide layer of a SOI substrate by using a mask to expose an N-type silicon substrate; implanting P-type ions into the exposed N-type silicon substrate to form P-type regions; forming a gate oxide layer and a gate electrode on the middle part of the active silicon not etched while the active silicon is etched to expose the N-type silicon substrate; forming a P-type gate electrode, and P-type source and drain regions by implanting P-type ions into the active silicon and the gate electrode above the buried oxide layer; and constructing a connection part to connect the P-type regions to the gate electrode.

Abstract: A photo sensor includes a first substrate, a switching element and a second substrate. The switching element is disposed at the first substrate and defined by a control electrode, and first and second current electrodes. The switching element includes a channel disposed between the first and second current electrodes. The channel has a first length to receive an incident external light. The second substrate includes a light receiving unit that is disposed corresponding to the channel. The light receiving unit has a second length longer than the first length and shorter than a third length of the control electrode.

Abstract: A silicon microlens and method of forming the microlens for focusing and steering light into the photosensitive region of a pixel. The microlens may be formed integrally within a silicon substrate or within a silicon layer over the substrate by performing a series of concentric etches of decreasing depth to produce a generally convex surface on the silicon substrate over the photosensitive region. A dielectric layer having an index of refraction of approximately half that of the silicon material is formed over the silicon microlens. The microlens may also be formed over the substrate by performing the etches over a polysilicon layer formed over the substrate.

Abstract: A microlens substrate is provided having a plurality of first microlenses and a plurality of second microlenses which are located between the plurality of first microlenses. The second microlenses are smaller than the first microlenses.

Abstract: An active device array substrate including a substrate, a plurality of active devices, a plurality of the first lead lines, a plurality of the second lead lines and a first floating light-shielding layer is provided. The substrate has a display region and a peripheral circuit region and the active devices are arranged within the peripheral circuit region on the substrate to form an array. Besides, the first lead lines and the second lead lines are disposed within the peripheral circuit region on the substrate. The first floating light-shielding layer is disposed between the first lead lines and covers the part of the first lead lines. Furthermore, the floating light-shielding layer is not connected with any voltage sources completely. Therefore, the active devices array substrate can prevent the light leakage from been resulted between the first lead lines and the power consumption of the active devices array substrate is reduced.

Abstract: An image sensor and a fabrication method thereof are provided. The image sensor includes: a first photodiode formed in a substrate and receiving a first color; a second photodiode formed in the substrate apart from the first photodiode and receiving a second color with a wavelength longer than that of the first color; a third photodiode formed in the substrate apart from the first photodiode and the second photodiode and receiving a third color with a wavelength longer than that of the second color; and a passivation layer formed on the substrate and having different regional thicknesses whose magnitude increases in order of a first region of the passivation layer corresponding to a first color region, a second region of the passivation layer corresponding to a second color region and a third region of the passivation layer corresponding to a third color region.

Abstract: A solid-state image pickup device 20 according to the present invention includes a plurality of light-receiving sensor portions 2 arrayed in the horizontal and vertical directions and interconnection layers of a plurality of layers formed through interlayer insulators so as to form opening portions 423 at their portions corresponding to the respective light-receiving sensor portions 2, wherein the opening portions 423 of the uppermost layer of the interconnection layer are shifted from the light-receiving sensor portions 2 toward the center of the image pickup area in any one direction of the horizontal direction or the vertical directions. Thus, it is possible to provide a solid-state image pickup device and an image pickup camera including this solid-state image pickup device capable of restraining shading while interconnection and layout of interconnection layers are being facilitated.

Abstract: A photoelectric converter device comprises a semiconductor substrate including a photoelectric converter element formed on its surface, a visible light filter arranged to at least partially cover the surface of the semiconductor substrate, and a support member attached to the surface of the semiconductor substrate. The photoelectric converter device further comprises, in an internal portion, a resin layer which absorbs infrared light. With this arrangement, undesirable influences of infrared light can be reduced.

Abstract: The invention includes a semiconductor construction having a pair of channel regions that have sub-regions doped with indium and surrounded by boron. A pair of transistor constructions are located over the channel regions and are separated by an isolation region. The transistors have gates that are wider than the underlying sub-regions. The invention also includes a semiconductor construction that has transistor constructions with insulative spacers along gate sidewalls. Each transistor construction is between a pair source/drain regions that extend beneath the spacers. A source/drain extension extends the source/drain region farther beneath the transistor constructions on only one side of each of the transistor constructions. The invention also includes methods of forming semiconductor constructions.

Abstract: A solid-state image sensing device that is free of kTC noise, can eliminate black smear and dark current, has a larger numerical aperture, and can eliminate the problem of insufficient area of the light-receiving portion. Photodiode PD is formed as the light-receiving portion in the formation region of first semiconductor region 15. Light is received by semiconductor layer 14 in this region, and the generated signal charge is accumulated. Semiconductor layer 12, 14, gate electrode for pixel selection 13a, first semiconductor region 15, second semiconductor region 16, third semiconductor region 17, etc., form transistor Tr1 for pixel selection. The threshold of junction transistor JT1, composed of semiconductor substrate 10, semiconductor layer 14, and second semiconductor region 16, etc., is modulated by means of the signal charge accumulated in semiconductor layer 14 in the light-receiving portion. When transistor Tr1 for pixel selection is ON, a voltage modulated according to the signal charge is output.

Abstract: A solid-state image sensor has a chip-size package, which can be easily fabricated. The element-formation regions are formed in the semiconductor substrate (21) of the light-receiving element layer (20) corresponding to the pixel regions. The semiconductor light-receiving elements (PD) are formed in the respective element-formation regions and covered with the light-transmissive insulator films (25a), (25b) and (26). The light-introducing layer (40), which includes the light-introducing cavity (42) and the quartz cap (51) for closing the cavity, is formed on the film (26). The microlenses (43) are incorporated into the cavity (42). The electric output signals of the semiconductor light-receiving elements (PD) are taken out to the bottom of the substrate (21) by way of the buried interconnections of the substrate (21) and then, derived to the outside of the image sensor by way of the output layer (10) or the interposer (10A).

Abstract: A device and method to provide an optical guide of a pixel to guide incoming light onto a photosensor of the pixel and to improve the optical crosstalk immunity of an image sensor. The optical guide consists of an optically reflecting barrier formed as a trench that mitigates against optical crosstalk. The optical guide is made of an air-filled ring of spaced slots. In another embodiment, the optical guide structure can be filled with a low dielectric material with an index of refraction that is less than the index of refraction of the material used for the surrounding layers.

Abstract: A CMOS image sensor is disclosed, to improve light-condensing efficiency by forming a minute lens array having a large curvature (long focal distance) for the increase in height of upper structures above a photodiode, which includes a lower layer formed of the photodiode, metal circuits, and insulating interlayers for insulating the metal circuits from one another; a color filter array of R, G and B formed on the lower layer; an overcoat layer formed on the color filter array; a micro-lens formed on the overcoat layer; and the minute lens array having minute lenses formed between the lower layer and the color filter array, each minute lens having a larger curvature than that of the micro-lens.

Abstract: A photodetector includes a semiconductor substrate having photo-cells (1a, 1b, 1c). Each photo-cell is provided with a filter layer 20 that transmits light in a wavelength range predetermined for the photo-cell, and a photoelectric converter 17 that generates a signal charge according to an intensity of the light transmitted through the filter layer 20. Thickness (ta, tb, tc) of the filter layers 20 are corresponding to the wavelength ranges predetermined for respective photo-cells. By such a structure, it is possible to provide cost effective photodetectors that can be manufactured without managing materials for pigments and dyestuff for different colors when making color filters.

Abstract: A semiconductor device includes a semiconductor element that is set up on a semiconductor layer, a light shielding wall that is set up around the semiconductor element, a hole that is set up on the light shielding wall, and a wiring layer that is electrically connected to the semiconductor element and is drawn out through the hole to the outside of the light shielding wall. The wiring layer has a pattern including a first part that is located within the hole and a second part that is located on the outside of the hole and has a larger width compared to the width of the first part, the width of the second part being the same with or larger than the width of the hole.

Abstract: An integrated color pixel (ICP) with at least one integrated metal filter is presented. Rather than utilizing a separate color filter, the wavelength responsivity of the ICP is specified and integrated at pixel level into the ICP itself using metal materials already available for standard integrated circuit design and fabrication process. The ICP of the present invention is thus distinguished from a conventional color pixel constructed in a two-stage process that combines an image sensor with a color filter array or other optical material.

Abstract: A solid state image sensing device is composed of a second conductive type well area 33, a photoelectric conversion area 40, a ring shaped gate electrode 35, a transfer gate electrode 41, a second conductive type drain area 38, a second conductive type source area 36, and a first conductive type source neighborhood area 37.

Abstract: Disclosed is a method of fabricating a CMOS (Complementary Metal Oxide Silicon) image sensor. The method includes the steps of: forming a device protective layer and a metal interconnection on a substrate formed with a light receiving device; forming an inner micro-lens on the metal interconnection; coating an interlayer dielectric layer on the inner micro-lens and then forming a color filter; and forming an outer micro-lens including a planarization layer and photoresist on the color filter. The inner micro-lens is formed by depositing the outer layer on dome-shaped photoresist. The curvature radius of the inner micro-lens is precisely and uniformly maintained and the inner micro-lens is easily formed while improving the light efficiency. Since the fabrication process for the CMOS image sensor is simplified, the product yield is improved and the manufacturing cost is reduced.

Abstract: There is provided a method of manufacturing a CMOS image sensor, in which an anti-reflection coating layer is additionally formed on a pad electrode so that it is possible to prevent the pad electrode from being corroded by development solution of a sequential photolithography process and to bond an external driving circuit and the pad electrode to each other without defect.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a plurality of sensors, an inter-layer dielectric layer formed over the sensors, a first inter-metal dielectric layer formed over the inter-layer dielectric layer, and a plurality of first via walls formed in the first inter-metal dielectric layer, wherein each of the first via walls is formed around each of the sensors. In addition, the image sensor further includes a second inter-metal dielectric layer formed over the first inter-metal dielectric layer and a plurality of second via walls formed in the second inter-metal dielectric layer, wherein each of the second via walls is formed around each of the sensors. Therefore, the light leakage between different pixels and the problem of crosstalk are solved, and the spatial resolution and the photo sensitivity of the image sensor are enhanced.

Abstract: Disclosed are an image sensor package and its manufacturing method. As an example, an infrared ray protection glass is positioned directly on an image sensing region of an image sensor die. An electrically conductive wire and so forth located outside the image sensing region are encapsulated. At this time, one surface of the infrared ray protection glass is exposed outwardly. A mount holder to which a barrel with lenses is coupled is adhered on a surface of the encapsulant outside the infrared ray protection glass. The mount holder has a similar width to that of the image sensor die. Accordingly, the overall width of the image sensor package can become reduced, and the electrically conductive wire is protected against oxidization because it is surrounded by the encapsulant.

Abstract: A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode covers at least part of the boundary between the portion of the p-type layer and the middle region. An n-type layer on the p-type layer has a top surface including a portion on a level with the upper region. Another electrode covers at least part of the boundary between the portion of the n-type layer and the upper region.

Abstract: Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the properties and performance of the imager array. In the resulting structure, the conserved sections absorb incident light. The patterned portions of conserved material provide additional light shielding for array pixels.

Abstract: A microlens array with reduced or no empty space between individual microlenses and a method for forming the same. The microlens array is formed by patterning a first set of microlens precursors in a checkerboard pattern on a substrate. The first set of microlens precursors is reflowed and cured into first microlenses impervious to subsequent reflows. Then, a second set of microlens precursors is patterned in spaces among the first microlenses, reflowed and cured into second microlenses. The reflows and cures can be conducted under different conditions, and the microlenses may be differently sized. The conditions of the reflows can be chosen to ensure that the focal lengths of microlenses are optimized for maximum sensor signal.

Abstract: A solid state image sensing device is composed of a second conductive type well area 33, a photoelectric conversion area 40, a ring shaped gate electrode 35, a transfer gate electrode 41, a second conductive type drain area 38, a second conductive type source area 36, and a first conductive type source neighborhood area 37.

Abstract: An image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased light sensitivity. In the sensor array, each Cu metallization level includes a Cu metal wire structure formed at locations between each array pixel and, a barrier material layer is formed on top each Cu metal wire structure that traverses the pixel optical path. By implementing a single mask or self-aligned mask methodology, a single etch is conducted to completely remove the interlevel dielectric and barrier layers that traverse the optical path. The etched opening is then refilled with dielectric material.

Abstract: A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.

Abstract: An optoelectronic component with an optoelectronic transducer is produced with the novel method. The optoelectronic component has a coupling region, which is formed in a radiation-transparent molding of the optoelectronic component. On the base of a clearance of the coupling region, the optoelectronic component has a radiation-optical functional surface, which is formed from the housing material and introduced into the molding with the aid of a profile milling cutter.

Abstract: The organic photoelectric conversion element according to the invention has enhanced the light-absorbing property by incorporating two or more kinds of electron donating organic materials 4a and 4b in the photoelectric conversion region 14. With such measure, it has become possible to efficiently absorb the incident light and enhance the photoelectric conversion characteristic. In addition, a light-to-light conversion material 7 is incorporated in the photoelectric conversion region, too. With this measure, even the light of such a wavelength that an electron donating organic material cannot inherently absorb comes to be absorbed since the light-to-light conversion material 7 converts the wavelength, thus enabling the light to be utilized for carrier generation. Accordingly, an organic photoelectric conversion element with a high conversion efficiency can be obtained.

Abstract: In a solid-state imaging apparatus, a plurality of pixel units are arranged, the pixel units including (i) a photoelectric conversion element formed above a semiconductor substrate and (ii) a color filter layer formed above the photoelectric conversion element. In each color filter layer, the central part is formed thicker than the peripheral part.

Abstract: An active matrix organic light emitting display (AM-OLED) and a method of forming the same. The AM-OLED has a plurality of pixel areas arranged in a matrix form. Each pixel area has at least two amorphous silicon TFTs, a display area and a light-shielding layer. The amorphous silicon TFT has an amorphous silicon layer serving as a channel region. The display area is formed by a transparent-conductive layer. The light-shielding layer covers at least the amorphous silicon layer of the amorphous silicon TFT and exposes the display area.

Abstract: A solid state image sensing device comprises a first semiconductor region of first conductivity type, a second semiconductor region of second conductivity type provided in the first semiconductor region, a third semiconductor region of second conductivity type provided in the first semiconductor region with a space from the second semiconductor region, a gate electrode provided on the first semiconductor region between the second semiconductor region and the third semiconductor region, a gate insulator layer interposed between the first semiconductor region and the gate electrode, and a fourth semiconductor region of second conductivity type provided below the second semiconductor region in the first semiconductor region.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, and an array of such sensor groups. In some embodiments, a carrier-collection element of at least one sensor of the group has substantially larger area, projected in a plane perpendicular to a normal axis defined by a top surface of a top sensor of the group, than does each minimum-sized carrier-collection element of the group. In some embodiments, the array includes at least two sensor groups that share at least one carrier-collection element. Optionally, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor of the group.

Abstract: The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film transistor with a larger area, and suitable for mass production. These objects are achieved by a thin-film transistor formed on a substrate 1 with a finely processed concavoconvex surface 2, in which a source electrode and a drain electrode are formed on adjacent convex portions of the concavoconvex surface 2, with a channel and a gate being formed on a concave area between the convex portions. A gate electrode 5, a gate insulating film 6 and a semiconductor channel layer 7 are laminated in this order on the concave area from the bottom surface of the concave portion toward the top surface.