Abstract: A method includes forming a gate stack on a middle portion of s semiconductor fin, and forming a first gate spacer on a sidewall of the gate stack. After the first gate spacer is formed, a template dielectric region is formed to cover the semiconductor fin. The method further includes recessing the template dielectric region. After the recessing, a second gate spacer is formed on the sidewall of the gate stack. The end portion of the semiconductor fin is etched to form a recess in the template dielectric region. A source/drain region is epitaxially grown in the recess.

Abstract: A method of fabricating a semiconductor device is described. The method includes forming a stack of sacrificial layers on a substrate. A U-shaped trench is formed in the stack of the sacrificial layers. A first U-shaped channel layer is deposited in the U-shaped trench. A first U-shaped sacrificial layer is conformally formed covering the U-shaped channel layer. A second U-shaped channel layer is conformally deposited covering the first U-shaped sacrificial layer. A gate is formed around the first and the second U-shaped channel layers.

Abstract: A semiconductor device and a fabricating method of the same are provided. The semiconductor device a substrate including an active region defined by an element isolation film, an impurity region having a first conductivity type in the active region, a first semiconductor film of a second conductivity type on the impurity region, a buried insulating film on the first semiconductor film, a second semiconductor film on the buried insulating film, and a well contact connected to the first semiconductor film. The level of a lowermost surface of the first semiconductor film is higher than a level of a lowermost surface of the element isolation film.

Abstract: Disclosed is a field effect transistor based on vertically integrated gate-all-around multiple nanowire channels including forming vertically integrated multiple nanowire channels in which a plurality of nanowires is vertically integrated, forming an interlayer dielectric layer (ILD) on the vertically integrated multiple nanowire channels, forming a hole in the interlayer dielectric layer such that at least some of the vertically integrated multiple nanowire channels are exposed, and forming a gate dielectric layer on the interlayer dielectric layer to fill the hole, wherein the forming of the gate dielectric layer on the interlayer dielectric layer to fill the hole includes depositing the gate dielectric layer on the interlayer dielectric layer to surround at least some of the vertically integrated multiple nanowire channels that are exposed though the hole. Nanowires may include various shapes of current channels that have efficient structures for current path.

Abstract: A semiconductor comprises two transistors of the first conductivity type separated from two transistors of a second conductivity type by a first element isolation layer. Further, the two transistors of the first conductivity type are separated from each other by a second element isolation layer and the two transistors of the second conductivity type are separated from each other by a third element isolation layer. In example embodiments, the second and third element isolation layers are shallower than the first element isolation layer.

Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising source/drain structures adjacent to spacers, and nanowire channel structures disposed between the spacers, wherein the nanowire channel structures are vertically stacked above each other.

Abstract: Embodiments are directed to methods of forming a semiconductor device and resulting structures for improving gate height control and providing interlayer dielectric (ILD) protection during replacement metal gate (RMG) processes. The method includes forming a semiconductor fin on a substrate. A sacrificial gate is formed over a channel region of the semiconductor fin, and an oxide hard mask is formed on a surface of the sacrificial gate. An interlayer dielectric (ILD) is formed adjacent to the sacrificial gate. The ILD is recessed below a surface of the oxide hard mask, and a nitride layer is formed on a surface of the recessed ILD.

Abstract: A low electrical and thermal resistance FinFET device includes a semiconductor body, a fin body on the substrate wafer, an isolation structure forming a fin connecting region, a gate dielectric on the fin body extending above the isolation structure, a FinFET gate electrode on the gate dielectric, a heavily-doped buried layer in the semiconductor body extending under said fin, and a vertical conductive region extending from the semiconductor body surface to the heavily-doped buried layer. Additionally, a fin body-to-buried layer implanted region disposed in the fin connecting region provides a low electrical and thermal resistance shunt from the fin body to the heavily-doped buried layer.

Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, a cladding layer, and a gate structure. The semiconductor substrate includes fin shaped structures. The isolation structure is disposed between the fin shaped structures. Each of the fin shaped structures includes a first portion disposed above a top surface of the isolation structure and a second portion disposed on the first portion. A width of the second portion is smaller than a width of the first portion. The cladding layer is disposed on the first portion and the second portion of each of the fin shaped structures. The cladding layer includes a curved surface. The gate structure is disposed straddling the fin shaped structures.

Abstract: The present disclosure includes multifunctional memory cells. A number of embodiments include a charge transport element having an oxygen-rich silicon oxynitride material, a volatile charge storage element configured to store a first charge transported through the charge transport element, and a non-volatile charge storage element configured to store a second charge transported through the charge transport element, wherein the non-volatile charge storage element includes a gallium nitride material.

Abstract: A semiconductor structure, comprising a semiconductor substrate; at least one fin, wherein the at least one fin comprises one or more first layers and one or more second layers, wherein the first layers and the second layers are interspersed and the first layers laterally extend further than the second layers; a dummy gate structure comprising a first spacer material disposed on sidewalls of the dummy gate; a second spacer material disposed adjacent to each of the second layers, wherein sidewalls of the fin comprise exposed portions of each of the first layers and the second spacer material, and an epitaxial source/drain material disposed on at least the exposed portions of each of the first layers. Methods and systems for forming the semiconductor structure.

Abstract: A fully-depleted silicon-on-insulator (FDSOI) semiconductor structure includes: a first PFET, a second PFET, and a third PFET each having a different threshold voltage and each being over an n-well that is biased to a first voltage; and a first NFET, a second NFET, and a third NFET each having a different threshold voltage and each being over a p-type substrate that is biased to a second voltage. The second voltage is different than the first voltage.

Abstract: Techniques are disclosed for achieving multiple fin dimensions on a single die or semiconductor substrate. In some cases, multiple fin dimensions are achieved by lithographically defining (e.g., hardmasking and patterning) areas to be trimmed using a trim etch process, leaving the remainder of the die unaffected. In some such cases, the trim etch is performed on only the channel regions of the fins, when such channel regions are re-exposed during a replacement gate process. The trim etch may narrow the width of the fins being trimmed (or just the channel region of such fins) by 2-6 nm, for example. Alternatively, or in addition, the trim may reduce the height of the fins. The techniques can include any number of patterning and trimming processes to enable a variety of fin dimensions and/or fin channel dimensions on a given die, which may be useful for integrated circuit and system-on-chip (SOC) applications.

Abstract: The present disclosure provides a delta-sigma modulator circuit for use in a pixelated image sensor or a readout integrated circuit. In one aspect, the modulator circuit includes a dynamic resistance element configured to have a variable resistance that changes in accordance with a voltage difference across the dynamic resistance element.

Abstract: Semiconductor devices are provided that use both silicon on insulator region and bulk region of a fully depleted silicon on insulator (FDSOI) device. For example, a semiconductor device includes a drain region that is disposed above a first type well and a first drain extension region that is disposed above the first type well and laterally spaced apart from the drain region. The semiconductor device further includes a second drain extension region that is disposed above the first type well and is laterally spaced apart from the drain region and the first drain extension region. The semiconductor device further includes a source region disposed above a second type well and laterally spaced apart from the second drain extension.

Abstract: A low electrical and thermal resistance FinFET device includes a semiconductor body, a fin body on the substrate wafer, an isolation structure forming a fin connecting region, a gate dielectric on the fin body extending above the isolation structure, a FinFET gate electrode on the gate dielectric, a heavily-doped buried layer in the semiconductor body extending under said fin, and a vertical conductive region extending from the semiconductor body surface to the heavily-doped buried layer. Additionally, a fin body-to-buried layer implanted region disposed in the fin connecting region provides a low electrical and thermal resistance shunt from the fin body to the heavily-doped buried layer.

Abstract: A method is provided for forming an integrated circuit with FinFETs. Initially, a fin is received with a dummy gate passing thereover. The dummy gate is removed to form a space over the fin. A temporary layer is subsequently placed in the space, and an element from the temporary layer is caused to pass into a portion of the fin to form a modified fin portion. After the temporary layer is removed, at least part of the modified fin portion is etched away to form a gap in the fin.

Abstract: A semiconductor device includes an SOI substrate and a MISFET formed on the SOI substrate. The SOI substrate has a base substrate, a ground plane region formed on the base substrate, a BOX layer formed on the ground plane region and an SOI layer formed on the BOX layer. The base substrate is made of silicon and the ground plane region includes a semiconductor region made of silicon carbide.

Abstract: The present invention relates to a junction field effect transistor. The junction field effect transistor comprises a substrate (10), a buried layer in the substrate, a first well region (32) and a second well region (34) that are on the buried layer, a source lead-out region (50), a drain lead-out region (60), and a first gate lead-out region (42) that are in the first well region (32), and a second gate lead-out region (44) in the second well region (34). A Schottky junction interface (70) is disposed on the surface of the first well region (32). The Schottky junction interface (70) is located between the first gate lead-out region (42) and the drain lead-out region (60), and is isolated from the first gate lead-out region (42) and the drain lead-out region (60) by means of isolation structures. The present invention also relates to a manufacturing method for a junction field effect transistor.

Abstract: First, half etching is performed to a semiconductor layer formed on an insulating layer to form trenches at positions of slab-portion regions in which slab portions are to be formed. After filling the trenches with an insulating film, a resist mask which covers the semiconductor layer at a projecting-portion region in which a projecting portion is to be formed and whose pattern ends are located on upper surfaces of the insulating films is formed on upper surfaces of the semiconductor layer and the insulating film, and full etching is performed to the semiconductor layer with using the resist mask and the insulating film as an etching mask, thereby forming an optical waveguide constituted of the projecting portion and the slab portions. Thereafter, a first interlayer insulating film is formed to cover the optical waveguide.

Abstract: Metal layout for radio-frequency (RF) switches. In some embodiments, an RF switching device can include a plurality of field-effect transistors (FETs) arranged in series to form a stack. Each of at least some of the FETs can include a source contact and a drain contact, a first group of fingers electrically connected to the source contact, and a second group of fingers electrically connected to the drain contact and arranged in an interleaved configuration with the first group of fingers. At least some of the first group of fingers and the second group of fingers can include a first metal M1 and a second metal M2 arranged in a stack. At least one of the first metal M1 and the second metal M2 can include a tapered portion to yield a current carrying capacity that varies as a function of location along a direction in which the corresponding finger extends.

Abstract: A method of forming a finFET transistor device includes forming a crystalline, compressive strained silicon germanium (cSiGe) layer over a substrate; masking a first region of the cSiGe layer so as to expose a second region of the cSiGe layer; subjecting the exposed second region of the cSiGe layer to an implant process so as to amorphize a bottom portion thereof and transform the cSiGe layer in the second region to a relaxed SiGe (rSiGe) layer; performing an annealing process so as to recrystallize the rSiGe layer; epitaxially growing a tensile strained silicon layer on the rSiGe layer; and patterning fin structures in the tensile strained silicon layer and in the first region of the cSiGe layer.

Abstract: Devices and methods related to radio-frequency (RF) switches having reduced-resistance metal layout. In some embodiments, a field-effect transistor (FET) based RF switch device can include a plurality of fingers arranged in an interleaved configuration such that a first group of the fingers are electrically connected to a source contact and a second group of the fingers are electrically connected to a drain contact. At least some of the fingers can have a current carrying capacity that varies as a function of location along a direction in which the fingers extend. Such a configuration of the fingers can desirably reduce the on-resistance (Ron) of the FET based RF switch device.

Abstract: A semiconductor on insulator substrate includes an electrically conductive layer disposed between an electrically insulating handle layer and the semiconductor layer to facilitate the application of a back bias. The connection of the electrically conductive layer to a reference voltage reduces the effects of trapped or fixed charges associated with the handle layer on the threshold voltage of a transistor formed on the semiconductor layer. Silicon-based devices formed on glass, plastic, and quartz substrates are among the devices that can benefit from the application of a back bias.

Abstract: Methods and structures for forming a localized, strained region of a substrate are described. Trenches may be formed at boundaries of a localized region of a substrate. An upper portion of sidewalls at the localized region may be covered with a covering layer, and a lower portion of the sidewalls at the localized region may not be covered. A converting material may be formed in contact with the lower portion of the localized region, and the substrate heated. The heating may introduce a chemical species from the converting material into the lower portion, which creates stress in the localized region. The methods may be used to form strained-channel finFETs.

Abstract: A method for semiconductor fabrication includes providing channel regions on a substrate including at least one Silicon Germanium (SiGe) channel region, the substrate including a plurality of regions including a first region and a second region. Gate structures are formed for a first n-type field effect transistor (NFET) and a first p-type field effect transistor (PFET) in the first region and a second NFET and a second PFET in the second region, the gate structure for the first PFET being formed on the SiGe channel region. The gate structure for the first NFET includes a gate material having a first work function and the gate structures for the first PFET, second NFET and second PFET include a gate material having a second work function such that multi-threshold voltage devices are provided.

Abstract: An enhancement-depletion circuit element includes a depletion-mode load transistor and an enhancement-mode drive transistor formed from the common elements of: a first patterned conductive layer including a load gate electrode and a drive gate electrode; a patterned inorganic dielectric stack including a load gate dielectric and a drive gate dielectric; a patterned inorganic semiconductor layer including a load semiconductor region and a drive semiconductor region; a second patterned conductive layer including a load source, a load drain, a drive source and a drive drain; and a patterned differential passivation structure having a patterned polymer dielectric layer and a patterned conformal inorganic dielectric layer. The depletion-mode load transistor has a load back-channel in contact with the patterned conformal inorganic dielectric layer. The enhancement-mode drive transistor has a drive back-channel in contact with the patterned polymer dielectric layer.

Abstract: An embodiment is a method of manufacturing a semiconductor device, the method including forming a first gate over a substrate, forming a recess in the substrate adjacent the first gate, epitaxially forming a strained material stack in the recess, the strained material stack comprising at least three layers, each of the at least three layers comprising a dopant. The method further includes co-implanting the strained material stack with dopants comprising boron, germanium, indium, tin, or a combination thereof, forming a metal layer on the strained material stack, and annealing the metal layer and the strained material stack forming a metal-silicide layer.

Abstract: An embodiment is a method including forming an epitaxial portion over a substrate, the epitaxial portion including a III-V material. A damaged material layer being on at least one surface of the epitaxial portion. The method further including oxidizing at least outer surfaces of the damaged material layer to form an oxide layer, selectively removing the oxide layer, and repeating the oxidizing and the selectively removing steps while at least a portion of the damaged material layer remains on the epitaxial portion.

Abstract: Techniques for controlling short channel effects in III-V MOSFETs through the use of a halo-doped bottom (III-V) barrier layer are provided. In one aspect, a method of forming a MOSFET device is provided. The method includes the steps of: forming a III-V barrier layer on a substrate; forming a III-V channel layer on a side of the III-V barrier layer opposite the substrate, wherein the III-V barrier layer is configured to confine charge carriers in the MOSFET device to the III-V channel layer; forming a gate stack on a side of the III-V channel layer opposite the III-V barrier layer; and forming halo implants in the III-V barrier layer on opposite sides of the gate stack. A MOSFET device is also provided.

Abstract: The present invention is a semiconductor device comprising a semiconducting low doped vertical super-thin body (VSTB) formed on Dielectric Body Wall (such as STI-wall as isolating substrate) having the body connection to bulk semiconductor wafer on the bottom side, isolation on the top side, and the channel, gate dielectric, and gate electrode on opposite to STI side surface. The body is made self-aligned to STI hard mask edge allowing tight control of body thickness. Source and Drain are made by etching holes vertically in STI at STI side of the body and filling with high doped crystalline or poly-Si appropriately doped with any appropriate silicides/metal contacts or with Schottky barrier Source/Drain. Gate first or Gate last approaches can be implemented. Many devices can be fabricated in single active area with body isolation between the devices by iso-plugs combined with gate electrode isolation by iso-trenches.

Abstract: Suspended charge storage regions are utilized for non-volatile storage to decrease parasitic interferences and increase charge retention in memory devices. Charge storage regions are suspended from an overlying intermediate dielectric material. The charge storage regions include an upper surface and a lower surface that extend in the row and column directions. The upper surface of the charge storage region is coupled to the overlying intermediate dielectric material. The lower surface faces the substrate surface and is separated from the substrate surface by a void. The charge storage region includes a first vertical sidewall and a second vertical sidewall that extend in the column direction and a third vertical sidewall and fourth vertical sidewall that extend in the row direction. The first, second, third, and fourth vertical sidewall are separated from neighboring features of the non-volatile memory by the void. The void may include a vacuum, air, gas, or a liquid.

Abstract: Some embodiments include methods of forming electrical contacts. A row of semiconductor material projections may be formed, with the semiconductor material projections containing repeating components of an array, and with a terminal semiconductor projection of the row comprising a contact location. An electrically conductive line may be along said row, with the line wrapping around an end of said terminal semiconductor projection and bifurcating into two branches that are along opposing sides of the semiconductor material projections. Some of the semiconductor material of the terminal semiconductor projection may be replaced with dielectric material, and then an opening may be extended into the dielectric material. An electrical contact may be formed within the opening and directly against at least one of the branches. Some embodiments include memory arrays.

Abstract: A method of forming a semiconductor structure in a semiconductor-on-insulator (SOI) substrate and semiconductor structure so formed are provided. The SOI substrate includes a semiconductor layer; a bulk semiconductor region underlying the semiconductor layer; and an insulation layer between the two. The method includes substantially simultaneously forming a first opening and a second opening extending from the semiconductor layer to the conductive region; introducing an insulating material to the side walls of the first opening; at least partially filling the first opening with a semiconductor material to provide an ohmic contact trench; and at least partially filling the second opening with an insulating material to form a device isolation trench. Insulating regions, for example, shallow trench isolation (STI) regions, may be formed about the device isolation trench and the ohmic contact trench. Semiconductor structures are also provided.

Abstract: A semiconductor device, including: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an insulating layer below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer.

Abstract: A method of forming a semiconductor device that includes forming a gate structure on a fin structure and etching the source and drain region portions of the fin structure to provide a recessed surface. A first semiconductor layer is formed on the recessed surface of the fin structure that is doped to a first conductivity type. A leakage barrier layer is formed on the first semiconductor layer. A second semiconductor layer is formed on the leakage barrier layer. The second semiconductor layer is doped to a second conductivity type.

Abstract: The structure and the fabrication methods herein implement a fully depleted, recessed gate silicon-on-insulator (SOI) transistor with reduced access resistance, reduced on-current variability, and strain-increased performance. This transistor is based on an SOI substrate that has an epitaxially grown sandwich of SiGe and Si layers that are incorporated in the sources and drains of the transistors. Assuming a metal gate last complementary metal-oxide semiconductor (CMOS) technology and using the sidewall spacers as a hard mask, a recess under the sacrificial gate reaching all the way through the SiGe layer is created, and the high-K gate stack and metal gate are formed within that recess. The remaining Si region, having a precisely controlled thickness, is the fully depleted channel.

Abstract: The structure, and fabrication method thereof, implements a fully depleted silicon-on-insulator (SOI) transistor using a “Channel Last” procedure in which the active channel is a low-temperature epitaxial layer in an etched recess in the SOI silicon film. An optional ?-layer of extremely high doping allows its threshold voltage to be set to a desired value. Based on high-K metal gate last technology, this transistor has reduced threshold uncertainty and superior source and drain conductance. The use of epitaxial layer improves the thickness control of the active channel and reduces the process induced variations. The utilization of active silicon layer that is two or more times thicker than those used in conventional fully depleted SOI devices, reduces the access resistance and improves the on-current of the SOI transistor.

Abstract: A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance.

Abstract: A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.

Abstract: The structure, and fabrication method thereof, implements a fully depleted silicon-on-insulator (SOI) transistor using a “Channel Last” procedure in which the active channel is a low-temperature epitaxial layer in an etched recess in the SOI silicon film. A highly localized ion implantation is used to set the threshold voltage of the transistor and to improve the short channel behavior of the final device. Based on high-K metal gate technology, this transistor has reduced threshold uncertainty and superior source and drain conductance.

Abstract: Semiconductor devices including a first transistor and a second transistor are integrated on a substrate. Each of the first and second transistors include a nano-sized active region including source and drain regions provided in respective end portions of the nano-sized active region and a channel forming region provided between the source and drain regions. The source and drain regions of the first transistor have the same conductivity type as those of the second transistor, and the second transistor has a threshold voltage lower than that of the first transistor. The channel forming region of the second transistor may include a homogeneously doped region, whose conductivity type is the same as the source and drain regions of the second transistor and is different from the channel forming region of the first transistor.

Abstract: A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate; and forming a trench in the semiconductor substrate by etching the semiconductor substrate. The methods also includes forming a threshold-adjusting layer doped with a certain type of threshold-adjusting ions to adjust the threshold voltage of the transistor on the semiconductor substrate in the trench; and forming a carrier drifting layer on the threshold-adjusting layer. Further the method includes forming a gate structure on the carrier drifting layer corresponding to the trench.

Abstract: A transistor includes a body and a semiconductor region configured to stress a portion of the body. For example, stressing a channel of the transistor may increase the mobility of carriers in the channel, and thus may reduce the “on” resistance of the transistor. For example, the substrate, source/drain regions, or both the substrate and source/drain regions of a PFET may be doped to compressively stress the channel so as to increase the mobility of holes in the channel. Or, the substrate, source/drain regions, or both the substrate and source/drain regions of an NFET may be doped to tensile stress the channel so as to increase the mobility of electrons in the channel.

Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.

Abstract: A fabrication process of a semiconductor device is disclosed. The method includes providing a semiconductor substrate with a first insulation layer formed on the semiconductor substrate and a fin formed on the surface of the first insulation layer, and forming a fully-depleted semiconductor layer on sidewalls of the fin, and the fully-depleted semiconductor layer having a material different from that of the fin. The method also includes forming a second insulation layer covering the fully-depleted semiconductor layer, and removing the fin to form an opening exposing sidewalls of the fully-depleted semiconductor layer. Further, the method includes forming a gate dielectric layer on part of the sidewalls of the fully-depleted semiconductor layer such that the part of the sidewalls of the fully-depleted semiconductor layer form channel regions of the semiconductor device, and forming a gate electrode layer covering the gate dielectric layer.

Abstract: A depletion type MOS transistor includes a well region having a first conductivity type and formed on a semiconductor substrate, a gate insulating film formed on the well region, and a gate electrode formed on the gate insulating film. Source and drain regions having a second conductivity type different from the first conductivity type are formed on respective sides of the gate electrode and within the well region. A first low concentration impurity region has the second conductivity type and is formed below the gate insulating film between the source and drain regions and within the well region. A second low concentration impurity region has the first conductivity type and is formed below the first low concentration impurity region between the source and drain regions and within the well region.

Abstract: The present invention provides a method for manufacturing a semiconductor structure, which comprises following steps: providing an SOI substrate, onto which a heavily doped buried layer and a surface active layer are formed; forming a gate stack and sidewall spacers on the substrate; forming an opening at one side of the gate stack, wherein the opening penetrates through the surface active layer, the heavily doped buried layer and reaches into a silicon film located on an insulating buried layer of the SOI substrate; filling the opening to form a plug; forming source/drain regions, wherein the source region overlaps with the heavily doped buried layer, and a part of the drain region is located in the plug. Accordingly, the present invention further provides a semiconductor structure. In the present invention, the heavily doped buried layer is favorable for reducing width of depletion layers at source/drain regions and suppressing short-channel effects.

Abstract: A semiconductor device includes a semiconductor-on-insulator (SOI) substrate having a bulk substrate layer, an active semiconductor layer, and a buried insulator layer interposed between the bulk substrate layer and the active semiconductor layer. A first source/drain (S/D) region includes a first stand-alone butting implant having a first butting width. A second S/D region includes a second stand-alone butting implant having a second butting width. A gate well-region is interposed between the first and second S/D regions. The gate well-region has a gate width that is greater than the first and second butting widths.

Abstract: The invention relates to an IC with an electrostatic discharge protection device. There is a buried insulant layer 50 nm or less in thickness and first and second bipolar transistors on the insulant layer, one being an npn transistor and the other a pnp transistor. The base of the first transistor is merged with the collector of the second transistor and the base of the second transistor is merged with the collector of the first transistor. The first and second bipolar transistors are configured to selectively conduct a discharge current between two electrodes of the protection device. There is a first semiconductor ground plane under the insulant layer, being electrically biased, extending until it is plumb with the base of the first bipolar transistor, exhibiting a first type of doping identical to that of the base of the first bipolar transistor with a doping density at least ten times greater.