Abstract: Measures are proposed by which the design freedom is significantly increased in the case of the implementation of the micromechanical structure of the MEMS element of a component, which includes a carrier for the MEMS element and a cap for the micromechanical structure of the MEMS element, the MEMS element being mounted on the carrier via a standoff structure. The MEMS element is implemented in a layered structure, and the micromechanical structure of the MEMS element extends over at least two functional layers of this layered structure, which are separated from one another by at least one intermediate layer.

Abstract: A MEMS device comprises a substrate, an island-shaped first insulating layer formed on the substrate, a second insulating film formed on the top and side surfaces of the first insulating layer and the top surface of the substrate, and having a thickness smaller than that of the first insulating layer, a metal layer formed on the second insulating film in an island-shaped region where the first insulating layer is formed, and a MEMS system element formed on the metal layer.

Abstract: A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.

Abstract: A micromechanical component, in particular a micromechanical sensor having a carrier substrate and having a cap substrate, and a manufacturing method are provided. The carrier substrate and the cap substrate are joined together with the aid of a eutectic bond connection or by a metallic solder connection or a glass solder connection (e.g., glass frit), in an edge area of the carrier substrate and the cap substrate. The connection of the carrier substrate and the cap substrate is established with the aid of connecting areas, and a stop trench or a stop protrusion or both a stop trench and a stop protrusion are situated within the edge areas in the bordering areas.

Abstract: A sensor for acoustic applications such as a silicone microphone is provided containing a backplate provided with apertures and a flexible diaphragm formed from a silicon on insulator (SOI) wafer which includes a layer of heavily doped silicon, a layer of silicon and an intermediate oxide layer that is connected to, and insulated from the backplate. The arrangement of the diaphragm in relation to the rest of the sensor and the sensor location, being mounted over the aperture in a PCB, reduces the acoustic signal pathway which allows the sensor to be both thinner and more importantly, enables there to be a greater back volume.

Abstract: A method for manufacturing a micromechanical component is proposed. In this context, at least one trench structure having a depth less than the substrate thickness is to be produced in a substrate. In addition, an insulating layer and a filler layer are produced or applied on a first side of the substrate. The filler layer comprises a filler material that substantially fills up the trench structure. A planar first side of the substrate is produced by way of a subsequent planarization within a plane of the filler layer or of the insulating layer or of the substrate. A further planarization of the second side of the substrate is then accomplished. A micromechanical component that is manufactured in accordance with the method is also described.

Abstract: An improved MEMS transducer apparatus and method. The apparatus has a movable base structure including an outer surface region and an inner surface region. At least one central anchor structure can be spatially disposed within a vicinity of the inner surface region and at least one peripheral anchor structure can be spatially disposed within a vicinity of the outer surface region. Additionally, the apparatus can have at least one peripheral spring structure. The peripheral spring structure(s) can be coupled to the peripheral anchor structure(s) and at least one portion of the outer surface region. The apparatus can also have at least one central spring structure. The central spring structure(s) can be operably coupled to the central anchor structure(s) and at least one portion of the inner surface region.

Abstract: An angular velocity sensor for detecting an angular velocity includes a substrate having the stationary portion, two pair of driver weights, two detector weights, and a detector electrode. The angular velocity is detected by using a differential signal output indicating a variation in capacitances. When the absolute value of a de-coupling ratio (=(fanti?fin)/fanti) is greater than or equal to 0.07, the occurrence of the anti-phase mode movement can be prevented so as to prevent the occurrence of the output error of the gyro sensor and detect the angular velocity more precisely.

Abstract: A semiconductor device suitable for use in a pressure sensor is disclosed. A uniformly thin die is provided by chemically etching a back side of a wafer. Piezoelectric elements formed integrally within the die generate electrical signals in response to flexing the die. Conductive leads formed integrally within the die electrically communicate the generated electrical signals to support circuitry formed integrally within the die proximate the piezoelectric elements. In an example embodiment, the piezoresistive elements take the form of silicon resistors formed integrally via doping and diffusion in a Wheatstone bridge configuration. In one application, the die serves as a deformable diaphragm, seated atop an aperture of a threaded pressure sensor housing.

Abstract: A semiconductor pressure sensor includes n-type semiconductor regions, which are formed in a diaphragm of a semiconductor substrate, piezoresistive elements, which are respectively formed in the n-type semiconductor regions, and conductive shielding thin film layers, which are respectively formed on the piezoresistive elements through an insulating thin film layer, and the piezoresistive elements form a Wheatstone bridge circuit. Further, the n-type semiconductor regions and the conductive shielding thin film layers are electrically connected to each other through contacts formed in the diaphragm.

Abstract: An example sensor that includes a first Schottky diode, a second Schottky diode and an integrated circuit. The sensor further includes a voltage generator that generates a first voltage across the first Schottky diode and a second voltage across the second Schottky diode. When the first Schottky diode and the second Schottky diode are subjected to different strain, the integrated circuit measures the values of the currents flowing through the first Schottky diode and the second Schottky diode to determine the strain on an element where the first Schottky diode and the second Schottky diode are attached.

Abstract: In accordance with one embodiment of the present disclosure, a semiconductor substrate includes complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate. An electrode is disposed outwardly from the CMOS circuitry. The electrode is electrically coupled to the CMOS circuitry. A resonator is disposed outwardly from the electrode. The resonator is operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.

Abstract: A metal mesh lid MEMS package includes a substrate, a MEMS electronic component coupled to the substrate, and a metal mesh lid coupled to the substrate with a lid adhesive. The metal mesh lid includes a polymeric lid body having a top port formed therein and a metal mesh cap coupled to the lid body. The metal mesh cap covers the top port and serves as both a particulate filter and a continuous conductive shield for EMI/RF interferences. Further, the metal mesh cap provides a locking feature for the lid adhesive to maximize the attach strength of the metal mesh lid to the substrate.

Abstract: An embodiment of the invention provides a chip package, which includes: a substrate having an upper surface and a lower surface; a passivation layer located overlying the upper surface of the substrate; a plurality of conducting pad structures disposed overlying the upper surface of the substrate, wherein at least portions of upper surfaces of the conducting pad structures are exposed; a plurality of openings extending from the upper surface towards the lower surface of the substrate; and a plurality of movable bulks located between the openings and connected with the substrate, respectively, wherein each of the movable bulks is electrically connected to one of the conducting pad structures.

Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

Abstract: The present invention discloses a MEMS microphone device and its manufacturing method. The MEMS microphone device includes: a substrate including a first cavity; a MEMS device region above the substrate, wherein the MEMS device region includes a metal layer, a via layer, an insulating material region and a second cavity; a mask layer above the MEMS device region; a first lid having at least one opening communicating with the second cavity, the first lid being fixed above the mask layer; and a second lid fixed under the substrate.

Abstract: In a sensor module for accommodating a pressure sensor chip and for installation into a sensor housing, a module wall is connected monolithically to the module bottom and surrounds the pressure sensor chip. Multiple connecting elements which are conducted through the module wall to the outside run straight at least in the entire outside area. Furthermore, the connecting elements are exposed on their top and bottom sides for affixing and electrically connecting at least one electrical component and for electrically integrating the sensor module into the sensor housing. In this way, a two-sided use of a sensor module having an identical external geometry and identical connectors is possible.

Abstract: The present disclosure relates to pressure sensor assemblies and methods. The pressure sensor assembly may include a first substrate, a second substrate and a sense die. The first substrate may be connected to the second substrate, such that an aperture in the first substrate is in fluid communication with an aperture in the second substrate. The second substrate may be connected to the sense die, such that the aperture in the second substrate is in fluid communication with a sense diaphragm on the second substrate. The pressure sensor assembly may include a media path that extends through the aperture in the first substrate, through the aperture in the second substrate, and to the sense die. In some cases, the first substrate, the second substrate and the sense die may be connected in a manner that does not include an adhesive.

Abstract: A semiconductor device includes a physical quantity sensor with a movable electrode disposed in a third layer of a first substrate, a fixed electrode in the third layer and a loop layer. The movable electrode and the fixed electrode are insulated by a second layer of the first substrate, and a loop bump disposed between the first substrate and a second substrate and surrounding the movable portion. The loop layer in the third layer is coupled with the second substrate via the loop bump.

Abstract: A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

Abstract: A process for assembly of an integrated device, envisages: providing a first body of semiconductor material integrating at least one electronic circuit and having a top surface; providing a second body of semiconductor material integrating at least one microelectromechanical structure and having a bottom surface; and stacking the second body on the first body with the interposition, between the top surface of the first body and the bottom surface of the second body, of an elastic spacer material. Prior to the stacking step, the step is envisaged of providing, in an integrated manner, at the top surface of the first body a confinement and spacing structure that confines inside it the elastic spacer material and supports the second body at a distance from the first body during the stacking step.

Abstract: An integrated MEMS device comprises a wafer where the wafer contains two or more cavities of different depths. The MEMS device includes one movable structure within a first cavity of a first depth and a second movable structure within a second cavity of a second depth. The cavities are sealed to maintain different pressures for the different movable structures for optimal operation. MEMS stops can be formed in the same multiple cavity depth processing flow. The MEMS device can be integrated with a CMOS wafer.

Abstract: A method of forming an electromechanical transducer device comprises forming on a fixed structure a movable structure and an actuating structure of the electromechanical transducer device, wherein the movable structure is arranged in operation of the electromechanical transducer device to be movable in relation to the fixed structure in response to actuation of the actuating structure. The method further comprises providing a stress trimming layer on at least part of the movable structure, after providing the stress trimming layer, releasing the movable structure from the fixed structure to provide a released electromechanical transducer device, and after releasing the movable structure changing stress in the stress trimming layer of the released electromechanical transducer device such that the movable structure is deflected a predetermined amount relative to the fixed structure when the electromechanical transducer device is in an off state.

Abstract: A MEMS switch (1, 81), and methods of fabricating thereof, the switch comprising: a sealed cavity (24); and a membrane (26); wherein the sealed cavity (24) is defined in part by the membrane (26); and the membrane is a 5 metallic membrane (26), for example consisting of a single type of metal or metal alloy. The MEMS switch (1, 81) may comprise a top electrode (30), for example extending into the cavity (24), located in a hole (32) in the metallic membrane (26). Fabrication may include providing a sacrificial layer (22) in a partly defined cavity (24). The bending stiffness of the membrane (26) may be 10 higher along an RF line (102) than along a line (104) perpendicular to the RF line (102), for example by virtue of the cavity (24) being elliptical.

Abstract: The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the second surface; and a conductive interconnection structure electrically connecting the microelectronic device area and the first MEMS device area.

Abstract: A new approach for building a stress-sensing rosette capable of extracting the six stress components and the temperature is provided, and its feasibility is verified both analytically and experimentally. The approach can include varying the doping concentration of the sensing elements and utilizing the unique behaviour of the shear piezoresistive coefficient (?44) in n-Si.

Abstract: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat.

Abstract: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface.

Abstract: A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes.

Abstract: A microstructure device package includes a package housing configured and adapted to house a microstructure device. A bracket is housed in the package housing. The bracket includes a bracket base with a first bracket arm and a second bracket arm each extending from the bracket base. A channel is defined between the first and second bracket arms. The first bracket aim defines a first mounting surface facing inward with respect to the channel. The second bracket aim defines a second mounting surface facing outward with respect to the channel. The second mounting surface of the bracket is mounted to the package housing. A microstructure device is mounted to the first mounting surface in the channel. The bracket is configured and adapted to isolate the microstructure device from packaging stress imparted from the package housing on the second mounting surface of the bracket.

Abstract: One-dimensional acceleration sensor includes: a semiconductor substrate having a constant thickness; parallel second through trenches through the substrate defining a flexible beam therebetween, having width significantly smaller than thickness; four piezo resistors formed at four corner regions of the flexible beam; first through trench through the substrate, continuous with ends of the first through trenches to define a weight continuous with one end of the flexible beam, including a pair of symmetrical first portions sandwiching the flexible beam and a second portion coupling the first portions and one end of the flexible beam, and having a center of gravity at an intermediate position on a longitudinal center line of the flexible beam; and one-layer wirings formed above the flexible beam, serially connecting piezo resistors at a same edge, and leading interconnection points generally along a longitudinal direction of the flexible beam.

Abstract: A plurality of three-dimensional structure configuring devices, each including an elastic body in which micro three-dimensional structure elements fixed to a substrate member are placed so as to be covered therewith and which is fixed to the substrate member, are placed within a film-like elastic body with the substrate members thereof spaced apart from one another so as to configure a three-dimensional structure. Thereby, the plurality of three-dimensional structure configuring devices can be placed with desired intervals of arrangement and in desired positions within the film-like elastic body and so that various specifications can be addressed.

Abstract: A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting.

Abstract: A MEMS differential pressure sensing element is provided by two separate silicon dies attached to opposite sides of a silicon or glass spacer. The spacer is hollow. If the spacer is silicon, the dies are preferably attached to the hollow spacer using silicon-to-silicon bonding provided in part by silicon oxide layers. If the spacer is glass, the dies can be attached to the hollow spacer using anodic bonding. Conductive vias extend through the layers and provide electrical connections between Wheatstone bridge circuits formed from piezoresistors in the silicon dies.

Abstract: A device structure is made using a first conductive layer over a first wafer. An isolated conductive region is formed in the first conductive layer surrounded by a first opening in the conductive layer. A second wafer has a first insulating layer and a conductive substrate, wherein the conductive substrate has a first major surface adjacent to the first insulating layer. The insulating layer is attached to the isolated conductive region. The conductive substrate is thinned to form a second conductive layer. A second opening is formed through the second conductive layer and the first insulating layer to the isolated conductive region. The second opening is filled with a conductive plug wherein the conductive plug contacts the isolated conductive region. The second conductive region is etched to form a movable finger over the isolated conductive region. A portion of the insulating layer under the movable finger is removed.

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract: This disclosure provides systems, methods and apparatus for glass-encapsulated pressure sensors. In one aspect, a glass-encapsulated pressure sensor may include a glass substrate, an electromechanical pressure sensor, an integrated circuit device, and a cover glass. The cover glass may be bonded to the glass substrate with an adhesive, such as epoxy, glass frit, or a metal bond ring. The cover glass may have any of a number of configurations. In some configurations, the cover glass may partially define a port for the electromechanical pressure sensor at an edge of the glass-encapsulated pressure sensor. In some configurations, the cover glass may form a cavity to accommodate the integrated circuit device that is separate from a cavity that accommodates the electromechanical pressure sensor.

Abstract: Methods of fabricating semiconductor sensor devices include steps of fabricating a hermetically sealed MEMS cavity enclosing a MEMS sensor, while forming conductive vias through the device. The devices include a first semi-conductor layer defining at least one conductive via lined with an insulator and having a lower insulating surface; a central dielectric layer above the first semiconductor layer; a second semiconductor layer in contact with the at least one conductive via, and which defines a MEMS cavity; a third semiconductor layer disposed above the second semiconductor layer, and which includes a sensor element aligned with the MEMS cavity; a cap bonded to the third semiconductor to enclose and hermetically seal the MEMS cavity; wherein the third semiconductor layer separates the cap and the second semiconductor layer.

Abstract: A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic.

Abstract: Monolithic IC/MEMS processes are disclosed in which high-stress silicon nitride is used as a mechanical material while amorphous silicon serves as a sacrificial layer. Electronic circuits and micro-electromechanical devices are built on separate areas of a single wafer. The sequence of IC and MEMS process steps is designed to prevent alteration of partially completed circuits and devices by subsequent high process temperatures.

Abstract: A microelectro mechanical system (MEMS) assembly includes a carrier and a MEMS device disposed over the carrier. A buffer layer is disposed over the MEMS device. The Young's modulus of the buffer layer is less than that of the MEMS device.

Abstract: A semiconductor strain sensor having a strain sensor chip composed of a semiconductor substrate having a piezoresistive element as a strain detection section. The semiconductor strain sensor has a stable characteristic for a long period of time and a stable conversion factor of a strain generated in the strain sensor chip corresponding to a strain of an object to be measured, within a strain range of a size to be measured. The strain sensor chip is bonded to a metal base plate with a metal bonding material. The metal base plate has two or four extending members, which protrude from a side of the strain sensor chip for attaching the strain senor chip to the object to be measured. Preferably, a groove is arranged between a metal base plate undersurface area, which corresponds to the bonding area where the strain sensor chip is bonded to the metal base plate, and the undersurfaces of the extending members, and a protruding section sandwiched by the grooves is arranged on the undersurface of the metal base plate.

Abstract: One aspect of the invention relates to an ultrathin micro-electromechanical chemical sensing device which uses swelling or straining of a reactive organic material for sensing. In certain embodiments, the device comprises a contact on-off switch chemical sensor. For example, the device can comprises a small gap separating two electrodes, wherein the gap can be closed as a result of the swelling or stressing of an organic polymer coating on one or both sides of the gap. In certain embodiments, the swelling or stressing is due to the organic polymer reacting with a target analyte.

Abstract: The present invention provides a dynamic quantity device which reduces stress received by a sensor due to resin packaging and reduces variation in sensor characteristics due to stress. The dynamic quantity sensor includes a semiconductor substrate including a fixing part and a flexible part and a movable part positioned on an interior side of the fixing part, and a cap component configured to cover the flexible part and the movable part, wherein the fixing part includes an interior frame configured to enclose the flexible part and the movable part and an exterior part positioned on a periphery of the interior frame, a slit configured to divide the interior frame and the exterior frame, and a linking part configured to link the interior frame and the exterior frame.

Abstract: There is disclosed a high temperature pressure sensing system which includes a SOI, silicon carbide, or gallium nitride Wheatstone bridge including piezoresistors. The bridge provides an output which is applied to an analog to digital converter also fabricated using SOI, silicon carbide, or gallium nitride materials. The output of the analog to digital converter is applied to microprocessor, which microprocessor processes the data or output of the bridge to produce a digital output indicative of bridge value. The microprocessor also receives an output from another analog to digital converter indicative of the temperature of the bridge as monitored by a span resistor coupled to the bridge. The microprocessor has a separate memory coupled thereto which is also fabricated from SOI, silicon carbide, or gallium nitride materials and which memory stores various data indicative of the microprocessor also enabling the microprocessor test and system test to be performed.

Abstract: A force sensing array includes multiple layers of material that are arranged to define an elastically stretchable sensing sheet. The sensing sheet may be placed underneath a patient to detect interface forces or pressures between the patient and the support structure that the patient is positioned on. The force sensing array includes a plurality of force sensors. The force sensors are defined where a row conductor and a column conductor approach each other on opposite sides of a force sensing material, such as a piezoresistive material. In order to reduce electrical cross talk between the plurality of sensors, a semiconductive material is included adjacent the force sensing material to create a PN junction with the force sensing material. This PN junction acts as a diode, limiting current flow to essentially one direction, which, in turn, reduces cross talk between the multiple sensors.

Abstract: A micro electromechanical system (MEMS) includes a substrate, a first curved surface located at a position above a surface of the substrate, and a second curved surface generally opposite to the first curved surface along a first axis parallel to the surface of the substrate, wherein the first curved surface is movable along the first axis in a direction toward the second curved surface.

Abstract: Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.

Abstract: A microscale polymer-based apparatus comprises a substrate formed from a first polymer material and at least one active region integrated with the substrate. The at least one active region is patterned from a second polymer material that is modified to perform at least one function within the at least one active region.