Abstract: The present disclosure involves forming a method of fabricating a Micro-Electro-Mechanical System (MEMS) device. A plurality of openings is formed in a first side of a first substrate. A dielectric layer is formed over the first side of the substrate. A plurality of segments of the dielectric layer fills the openings. The first side of the first substrate is bonded to a second substrate that contains a cavity. The bonding is performed such that the segments of the dielectric layer are disposed over the cavity. A portion of the first substrate disposed over the cavity is transformed into a plurality of movable components of a MEMS device. The movable components are in physical contact with the dielectric the layer. Thereafter, a portion of the dielectric layer is removed without using liquid chemicals.

Abstract: A user manages security of one or more user devices by manipulating one or more sensors located in the user's mouth in a predetermined pattern corresponding to a password. The matching of the predetermined pattern to the password unlocks at least a portion of at least one user device.

Abstract: A chip arrangement may include: a mold compound; and a microelectromechanical systems device at least partially embedded in the mold compound.

Abstract: There is provided a calorimeter. Heat flows in and out of the sample via a thermoelectric module. The thermoelectric module is so constituted that a pair of a P-type thermoelectric element and an N-type thermoelectric element is disposed between substrates, and the pair of the thermoelectric elements are connected in n pairs so that the P-type thermoelectric elements and the N-type thermoelectric element are arranged alternately in ?-shape; a calorimetric sensitivity of the thermoelectric module of a thermal conductance surrounding thermoelectric module and a thermal conductance between substrates of the thermoelectric modules and a noise based on an electric resistance of the thermoelectric module depend on an L/A ratio of the thermoelectric element constituting the thermoelectric module and the number n of the pairs of the thermoelectric elements, where the L/A ratio is 6 mm?1 or more, and the number n of the pairs is 4 or more.

Abstract: Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: VxAly(N1-wOw)z (where 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

Abstract: A transducer structure including a carrier with an opening and a suspended structure mounted on the carrier which extends at least partially over the opening in the carrier is disclosed. The transducer structure may further include configuring the suspended structure to provide an electrostatic field between the suspended structure and the carrier by changing a distance between the suspended structure and the carrier. Alternatively, the suspended structure may be configured to change the distance between the suspended structure and the carrier in response to an electrostatic force provided between the suspended structure and the carrier.

Abstract: A force detecting device includes a first base section, a second base section, and a charge output element arranged between the first base section and the second base section. The charge output element includes a first board formed by a Y-cut quartz plate and a second board formed by a Y-cut quartz plate. The boards are laminated in a direction orthogonal to the normal an attachment surface of the second base section. The force detecting device detects an external force on the basis of a first output corresponding to a shearing force in a first detection direction orthogonal to the laminating direction of the first board and a second output corresponding to a shearing force in a second detection direction orthogonal to the laminating direction of the second board and crossing the first detection direction.

Abstract: Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1?vVv)xAly(N1?wOw)z (where 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and “M” is one or two elements selected from Ti and Cr. The method includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-V—Al alloy sputtering target, wherein “M” is one or two elements selected from Ti and Cr.

Abstract: An insulated gate semiconductor device provided herein includes a front electrode and a rear electrode and is configured to switch a conducting path between the front electrode and the rear electrode. The insulated gate semiconductor device includes a first circumferential trench provided in the front surface; a second circumferential trend provided in the front surface and deeper than the first circumferential trench; a fifth region of a second conductivity type exposed on a bottom surface of the first circumferential trench; a sixth region of the second conductivity type exposed on a bottom surface of the second circumferential trench; and a seventh region of a first conductivity type connected to the third region and separating the fifth region from the sixth region. A front side end portion of the sixth region being located on a rear side with respect to a rear side end portion of the fifth region.

Abstract: A method for forming an electrically conductive via in a substrate that includes the steps of: forming a through hole in a first substrate; bringing a first surface of a second substrate into contact with the first surface of the first substrate, such that the through hole in the first substrate is covered by the first surface of the second substrate; filling the through hole in the first substrate with an electrically conductive material by electroplating to form the electrically conductive via, and removing the second substrate, wherein the first surface of the first and the second substrate each have a surface roughness Ra of less than 2 nm, preferably less than 1 nm, more preferably less than 0.5 nm, and the first surface of the first and the second substrate are brought in direct contact with each other, such that a direct bond is formed there between.

Abstract: MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device.

Abstract: Various implementations described herein involve interferometric modulators (IMODs), which may be single-mirror IMODs (SMIs). Such IMODs may include an absorber stack and a mirror stack. The absorber stack and the mirror stack may define a gap therebetween and may be capable of being positioned in a plurality of positions relative to one another to form a plurality of gap heights. A hinge area may physically connect the mirror stack and an anchor area. Some such IMODs have hinge areas without any metal layer. However, the hinge area may be capable of forming an electrical connection with at least one metal layer of the mirror stack. For example, such IMODs may have a hinge area that includes a non-metal conductor.

Abstract: A semiconductor manufacturing process enables a complex multi-layer, silicon based MEMS devices, such as a gyroscope or accelerometer to be formed without using Silicon On Insulator (SOI) substrates and obviates the need to purchase and use SOI wafers as starting materials. The disclosed techniques further allows the etching of the sacrificial oxide to be “head started” prior to fusion bonding, thereby reducing the amount of release etching required at the end of the MEMS wafer processing.

Abstract: A sensor device includes a charge output element including a plurality of piezoelectric bodies and an internal electrode formed between the piezoelectric bodies, a package that houses the charge output element, first conductive paste electrically connected to a plurality of the internal electrodes, and second conductive paste that electrically connects the first conductive paste and an output terminal and has a modulus of elasticity lower than a modulus of elasticity of the first conductive paste. A Young's modulus of the first conductive paste is equal to or higher than 3.4 GPa and equal to or lower than 5.0 GPa and a Young's modulus of the second conductive paste is equal to or higher than 0.1 GPa and equal to or lower than 0.2 GPa.

Abstract: A semiconductor device has a semiconductor die and first insulating layer formed over the semiconductor die. A plurality of first micro-vias can be formed in the first insulating layer. A conductive layer is formed in the first micro-openings and over the first insulating layer. A second insulating layer is formed over the first insulating layer and conductive layer. A portion of the second insulating layer is removed to expose the conductive layer and form a plurality of second micro-openings in the second insulating layer over the conductive layer. The second micro-openings can be micro-vias, micro-via ring, or micro-via slots. Removing the portion of the second insulating layer leaves an island of the second insulating layer over the conductive layer. A bump is formed over the conductive layer. A third insulating layer is formed in the second micro-openings over the bump. The second micro-openings provide stress relief.

Abstract: The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm?2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0?x?1, 0?y?1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.

Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers separated by dielectric layers, the stack comprising a first conductive support structure and a second conductive support structure and a cavity in which an inertial mass element comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions, at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A package includes a MEMS die and a cap element coupled to and stacked with the MEMS die. The MEMS die includes at least two physically isolated pressure sensors, each of which resides on its individual cantilevered platform structure. A first pressure sensor is vented to a first external environment via a first vent extending through the bottom of the MEMS die and is adapted to detect a first pressure of the first external environment. The MEMS die can be coupled to a lead frame having an opening that is aligned with the first vent. A second sensor is vented to a second external environment via a second vent extending through the cap element and is adapted to detect a second pressure of the second external environment. A difference between the first and second pressures is the differential pressure.

Abstract: A micromechanical sensor device includes: a MEMS element; an ASIC element; a bonding structure provided between the MEMS element and the ASIC element; a layer assemblage having insulating layers and functional layers disposed alternatingly on one another; a sensing element movable in a sensing direction provided in at least one of the functional layers; a spacing element for providing a defined spacing between the MEMS element and the ASIC element being provided by way of a further functional layer; an abutment element having the spacing element and a first bonding layer being disposed on the sensing element; and an insulating layer being disposed on the ASIC element in an abutment region of the abutment element.

Abstract: To obtain a thermal flow meter capable of providing thermal insulation without degrading responsiveness of a temperature detection element.

Abstract: The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly(N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: A pressure sensor package includes a substrate providing a connection port, a support member mounted on the substrate by compression molding and having a gap cut through opposing top and bottom walls thereof to expose the connection port, a sensor chip mounted on the support member and electrically connected to the connection port, an encapsulating cover covered on the support member and defining therein an accommodation chamber that accommodates the sensor chip and a through hole that is disposed in communication with the accommodation chamber for the passing of an external signal therethrough to the sensor chip. Thus, the support member steadily carries the sensor chip and isolates stress arising from the external environment, thereby reducing stress interference with the sensor chip and enhancing the overall performance of the pressure sensor package.

Abstract: A semiconductor chip includes a substrate, an electrode pad formed on the substrate, an insulating layer covering the substrate and the electrode pad, and having an opening exposing a portion of a surface of the electrode pad, a first conductive layer formed on the exposed portion of the surface of the electrode pad and extending to a surface of the insulating layer, and a second conductive layer formed on the first conductive layer, covering the first conductive layer in a plan view, and having an outer edge portion which is located further out than an outer edge of the first conductive layer in a plan view. The outer edge portion of the second conductive layer has at least one curved portion. At least one portion of the curved portion is located between the outer edge of the first conductive layer and an outer edge of the second conductive layer in a plan view.

Abstract: Apparatuses and methods for the haptic sensation of forces at a remote location. Groups of MEMS-based pressure sensors are combined into sensor arrays. In some embodiments, the pressure sensors are encased in silicone or other elastomeric substance to allow for routine use in the aqueous environment of the body. The sensor arrays may be housed in a No-compatible material (e.g., stainless steel, plastic) and may be attached to a printed circuit board to allow the electrical signal generated by the sensors to be communicated to a user. The sensor arrays may be used with faceplates that directly interact with the target tissue or object. The faceplates may be rough, smooth, serrated, or any other texture. The present apparatuses and methods are particularly well suited for robotic surgery and may be used in wherever haptic sensing of forces at a remote location is desired.

Abstract: A MEMS micromirror (30) is presented including a frame (60) with a mirror body (50) arranged therein, a cantilever beam assembly (70) and vertical support beams (40). The mirror body (50) is rotatable around a rotation axis (58) extending in a plane (x-y) defined by the frame (60). The cantilever beam assembly (70) has a longitudinal direction and extends within said plane. The vertical support beams (40) are connected between the mirror body (50) and the frame (60) along the rotation axis (58). The cantilever beam assembly (70) has a cantilever beam (72), being coupled at a first end via relief means (74) to the frame (60) and fixed at a second end (722) to the mirror body (50). The cantilever beam (72) has a thickness, perpendicular to a plane of the frame (60), that is smaller than its width in the plane of the frame (60).

Abstract: Disclosed embodiments include external gettering provided by electronic packaging. An external gettering element for a semiconductor substrate, which may be incorporated as part of an electronic packaging for the structure, is disclosed. Semiconductor structures and stacked semiconductor structures including an external gettering element are also disclosed. An encapsulation mold compound providing external gettering is also disclosed. Methods of fabricating such devices are also disclosed.

Abstract: Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1?vAv)xAly(N1?wOw)z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: To propose an oral cavity sensor capable of analyzing tongue movements in more detail than before. In an oral cavity sensor (1) which is even provided with a sensor element (7) having a mechanical configuration capable of measuring each of external force components in three axis directions, the sensor element (7) can be protected by an elastic body (9), and the whole of the elastic body (9) is covered with the coating film (11a) made of a biocompatible material. Thereby, the sensor element (7) and the elastic body (9) can be safely attached in an oral cavity (MT) of a subject (EXA), and can measure each of the external force components in the three axis directions. As a result, on the basis of the external force components in the three axis directions, complicated tongue movements at the time of mastication or swallowing in the oral cavity (MT) can be analyzed in more detail than before.

Abstract: A bonding stress testing arrangement and a method of determining stress are provided. The bonding stress testing arrangement includes at least one bond pad; a sensor assembly comprising any one of a first sensor arrangement, a second sensor arrangement and a combination of the first sensor arrangement and the second sensor arrangement; wherein the first sensor arrangement is adapted to measure an average stress on a portion of a bonding area under the at least one bond pad, and the second sensor arrangement is adapted to determine stress distribution over a portion or an entire of the bonding area under the at least one bond pad.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.

Abstract: A micromechanical device includes a substrate, a micromechanical structure supported by the substrate and configured for overtone resonant vibration relative to the substrate, and a plurality of electrodes supported by the substrate and spaced from the micromechanical structure by respective gaps. The plurality of electrodes include multiple drive electrodes configured relative to the micromechanical structure to excite the overtone resonant vibration with a differential excitation signal, or multiple sense electrodes configured relative to the micromechanical structure to generate a differential output from the overtone resonant vibration.

Abstract: A MEMS capacitive pressure sensor is provided. The pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The pressure sensor also includes a first electrode layer formed on the first dielectric layer, and a second dielectric layer having first openings formed on the first electrode layer. Further, the pressure sensor includes conductive sidewalls connecting with the first electrode layer formed on sidewalls of the first openings, and a second electrode layer with a portion formed on the second dielectric layer in the second region and the rest suspended over the conductive sidewalls in the first region. Further, the pressure sensor also includes a chamber between the conductive sidewalls and the second electrode layer; and a third dielectric layer formed on the second electrode layer exposing a portion of the second electrode layer in the first region.

Abstract: A method for directly attaching dielectric to a circuit board with embedded electronic devices is provided. That is, a plurality of through holes are produced before embedding an electronic device, wherein plural through holes are corresponding to a plurality of electrodes of the electronic device. So that the plural electrodes of the electronic device is accurately positioned with the through holes if the electronic device is being embedded. On the other hand, since the first dielectric layer is adhesive, the electronic device is directly stuck on the first dielectric layer in order to save cost of adhesive material or metal conductive paste in prior arts.

Abstract: An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.

Abstract: An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.

Abstract: A method for producing a closed-section portion of an aircraft wherein a strain gauge is glued on a first face of a flat tape that, in turn, is fastened on a face of a tool comprising a rigid elongated body covered by an extensible sack. The tool supporting the tape is arranged in a cavity of an aircraft structure. A vacuum is then created to obtain the expansion of the vacuum sack and perform the pressure gluing of the tape onto a wall of said cavity. The tool is subsequently extracted from the cavity. Upon conclusion of these operations, the tape is integrally fastened onto a wall of the cavity so that any deformation applied to this wall is transmitted to said strain gauge.

Abstract: A present MEMS device includes: a structural member that is provided on a surface of a substrate and forms a cavity surrounding a functional element; a first layer in which an opening is formed in a predetermined position, the first layer covering a part of the cavity in such a manner that a gap is present between the first layer and the functional element; a second layer in which an opening is formed in a position corresponding to the predetermined position, the second layer being provided on a surface of the first layer; and a sealing portion that is provided on a surface of the second layer across a range broader than the opening of the first layer and the opening of the second layer, and seals at least the opening of the second layer.

Abstract: A pressure regulator includes: a pressure-regulating valve configured to regulate pressure of a fluid supplied from a fluid supply source; a first pressure sensor configured to measure the pressure regulated by the pressure-regulating valve; a second pressure sensor located downstream of the first pressure sensor; a PID controller configured to produce a correction pressure command value for eliminating a difference between a pressure command value and a pressure value of the fluid measured by the second pressure sensor; and a regulator controller configured to control operation of the pressure-regulating valve so as to eliminate a difference between the correction pressure command value and a pressure value of the fluid measured by the first pressure sensor.

Abstract: A resonant MEMS pressure sensor in which the resonator mass of the MEMS resonator is anchored both to the fixed base beneath the resonator cavity as well as to the top membrane over the resonator cavity. This provides a more robust fixing of the resonator mass and offers a dependence of resonant frequency on the pressure outside the cavity.

Abstract: A microelectronic assembly is provided in which first and second electrically conductive pads exposed at front surfaces of first and second microelectronic elements, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element may extend within a first opening extending from a rear surface of the first microelectronic element towards the front surface thereof, within a second opening extending from the first opening towards the front surface of the first microelectronic element, and within a third opening extending through at least one of the first and second pads to contact the first and second pads. Interior surfaces of the first and second openings may extend in first and second directions relative to the front surface of the first microelectronic element, respectively, to define a substantial angle.

Abstract: The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.

Abstract: A pressure sensor package includes a lead and a semiconductor die spaced apart from the lead and including a terminal and a diaphragm disposed at a first side of the die. The die is configured to change an electrical parameter responsive to a pressure difference across the diaphragm. The package further includes an electrical conductor connecting the terminal to the lead, a molding compound encasing the electrical conductor, the die and part of the lead, a cavity in the molding compound exposing the diaphragm, and a sealing ring disposed on a side of the molding compound with the cavity. The sealing ring surrounds the cavity and has a lower elastic modulus than the molding compound. Alternatively, the sealing ring can be a ridge of the molding compound that protrudes from the side of the molding compound with the cavity and surrounds the cavity. A package manufacturing method is also provided.

Abstract: A semiconductor device has a semiconductor element having a base, a cavity having a polygonal horizontal cross-section penetrating vertically through the base, a diaphragm arranged on the base to cover the cavity, and a substrate formed with a die bonding pad. A lower surface of the semiconductor element is adhered on the die bonding pad with a die bonding resin. The die bonding pad is formed so as not to contact a lower end of a valley section formed by an intersection of wall surfaces of an inner peripheral surface of the cavity of the semiconductor element.

Abstract: The present invention provides a self-heated pressure sensor assembly and method of utilizing the same. The self-heated pressure sensor assembly regulates and maintains the temperature of the pressure sensor, regardless of the external temperature environment, without an external heater as in prior art embodiments. Exemplary embodiments of the pressure sensor assembly incorporate a resistance heater that is built into the sensing chip of the pressure sensor assembly. The pressure sensor assembly also utilizes the resistance of the pressure sensing elements to monitor the temperature of the assembly, which works alongside the resistance heater to maintain a stable temperature within the pressure sensor assembly.

Abstract: A device comprising a substrate comprising at least one microelectronic and/or nanoelectronic structure comprising at least one sensitive portion and one fluid channel (2) defined between said substrate and a cap (6), where said fluid channel (2) comprises at least two apertures to provide a flow in said channel, where said microelectronic and/or nanoelectronic structure is located within the fluid channel, where said cap is assembled with the substrate at an assembly interface, where said device comprises electrical connections between said microelectronic and/or nanoelectronic structure and the exterior of the fluid channel (2), where said electrical connections (8) are formed by vias made through the substrate (4) directly below the microelectronic and/or nanoelectronic structure, and in electrical contact with said microelectronic and/or nanoelectronic structure.

Abstract: An electronic device includes a substrate; an element configured to be formed on the substrate; a sidewall member configured to enclose the element on the substrate; a cover member configured to be disposed on the sidewall member, and to partition a space around the element along with the sidewall member on the substrate; and a seal member configured to be disposed outside of the sidewall member, to bond the sidewall member and the cover member to a surface of the substrate, and to seal the space.

Abstract: A transistor structure includes a first terminal region, a second terminal region and a channel region therebetween in a semiconductor substrate. Additionally, the transistor structure includes a control electrode associated with the channel region, the control electrode having a control electrode portion which is elastically deflectable under the action of a force and spaced apart from the channel region. The distance between the control electrode portion and the channel region is changed based on the action of force.

Abstract: The method for polishing work, in which work in a retaining opening provided in a carrier plate, the center of the retaining opening being positioned apart from the center of the carrier plate, is sandwiched between an upper plate and a lower plate provided with polishing pads; the carrier plate is rotated by a drive mechanism; and the upper plate and the lower plate are also rotated, so that the distance changes periodically with the rotation of the carrier plate, and both surfaces of the work are simultaneously polished, includes the steps of: measuring at least one of torque of the drive mechanism, the upper plate, and the lower plate; and controlling an amount of polishing removal of the work based on the fluctuation of the torque component due to the periodic change in the distance.

Abstract: A present MEMS device includes: a semiconductor substrate in which a trench is formed; a functional element that is provided in the trench of the semiconductor substrate and includes a connection electrode; a structural member that forms a cavity surrounding the functional element; a lid portion that includes a conductive member electrically connected to the connection electrode and covers the cavity; an insulating layer that covers the main surface of the semiconductor substrate provided with the lid portion and a semiconductor circuit element; a first electrode that penetrates the insulating layer and is electrically connected to the conductive member; a second electrode that penetrates the insulating layer and is electrically connected to the semiconductor circuit element; and wiring that is provided on a surface of the insulating layer and brings the first electrode and the second electrode into electrical connection to each other.

Abstract: An implementation for an electret in a capacitive MEMS element including a pressure-sensitive diaphragm, which is produce-able using standard methods of semiconductor technology for easy integration into the manufacturing process of MEMS semiconductor elements. Such MEMS elements include at least one pressure-sensitive diaphragm including at least one deflectable diaphragm electrode of a capacitor system for signal detection and one fixed non-pressure-sensitive counter-element including at least one counter-electrode of this capacitor system, at least one electrode of the capacitor system being provided with an electrically charged electret, so that there is a potential difference between the two electrodes of the capacitor system. The electret includes at least two adjacent layers made from different dielectric materials, electrical charges being stored on their boundary surface.