Abstract: A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Abstract: A piezoelectric microelectromechanical systems diaphragm microphone can be mounted on a printed circuit board. The microphone can include a substrate with an opening between a bottom end of the substrate and a top end of the substrate. The microphone can have two or more piezoelectric film layers disposed over the top end of the substrate and defining a diaphragm structure. Each of the two or more piezoelectric film layers can have a predefined residual stress that substantially cancel each other out so that the diaphragm structure is substantially flat with substantially zero residual stress. The microphone can include one or more electrodes disposed over the diaphragm structure. The diaphragm structure is configured to deflect when the diaphragm is subjected to sound pressure via the opening in the substrate.

Abstract: A piezoelectric microelectromechanical systems diaphragm microphone can be mounted on a printed circuit board. The microphone can include a substrate with an opening between a bottom end of the substrate and a top end of the substrate. The microphone can have two or more piezoelectric film layers disposed over the top end of the substrate and defining a diaphragm structure. Each of the two or more piezoelectric film layers can have a predefined residual stress that substantially cancel each other out so that the diaphragm structure is substantially flat with substantially zero residual stress. The microphone can include one or more electrodes disposed over the diaphragm structure. The diaphragm structure is configured to deflect when the diaphragm is subjected to sound pressure via the opening in the substrate.

Abstract: A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

Abstract: A manufacturing method of microelectromechanical system (MEMS) device includes providing a first, a second and a third substrates, wherein the first substrate includes a first and a second circuit, the second substrate includes second and third connection areas, and the third substrate includes first connection areas. Second grooves and a dividing groove are formed on the fourth surface of the third substrate. The second and third substrates are bonded to make the first and the second connection areas correspondingly connect with each other. The second substrate is divided to form electrically isolating first and second movable elements. The first movable element is spatial separated from the third substrate and corresponding to the second groove. The second movable element is connected to the third substrate. The first and the second substrates are bonded to make the fourth and the third connection areas connect correspondingly.

Abstract: Provided are a chip packaging method and a chip packaging structure. The passivation layer is arranged on the pads of the wafer, then the first bonding layer is formed on the passivation layer, and the second bonding layer is formed on the substrate. The substrate and the wafer are bonded and packaged together by bonding the first bonding layer and the second bonding layer. The pads are only used as a conductive structure, not as a bonding layer due to the passivation layer arranged between the pads and the bonding layer. The through silicon via is arranged at the position above the pad and avoiding the bonding layer, so as to connect the functional circuit region between the wafer and the substrate to the outside of the chip packaging structure.

Abstract: A method includes fusion bonding a first side of a MEMS wafer to a second side of a first handle wafer. A TSV is formed from a first side of the first handle wafer to the second side of the first handle wafer and into the first MEMS wafer. A dielectric layer is formed on the first side of the first handle wafer. A tungsten via is formed in the dielectric layer. Electrodes are formed on the dielectric layer. A second MEMS wafer is eutecticly bonded with a first eutectic bond to the electrodes, wherein the TSV electrically connects the first MEMS wafer to the second MEMS wafer. Standoffs are formed on a second side of the first MEMS wafer. A CMOS wafer is eutecticly bonded with a second eutectic bond to the standoffs, wherein the second eutectic bond includes different materials than the first eutectic bond.

Abstract: The present disclosure includes a method for monitoring the condition of a component of an electromechanical resonator having a piezoelectrical element which can be excited to mechanical vibration using an electrical excitation signal and the mechanical vibrations of which can be received in the form of an incoming electrical signal. The method steps performed at a first point and a second point in time, including determining an amplification factor of the electromechanical resonator, determining a mechanical quality resonator, and establishing an electromechanical efficiency resonator at least from the amplification factor and the mechanical quality. A change over time in the electromechanical efficiency is calculated from the first point to the second point in time, the change over time in the electromechanical efficiency is compared with a pre-definable threshold, and a condition indicator is determined from the comparison.

Abstract: A method for operating a micromechanical component (a rotation rate sensor), in which a first AC electrical voltage, having a first frequency, is applied to a drive-electrode so that an oscillation apparatus is deflected parallel to a deflection direction by the drive-electrode; a second AC electrical voltage, having a second frequency, is applied to a detection-electrode so that a force effect on the oscillation apparatus perpendicularly to the detection direction is detected by the drive-electrode, a third AC electrical voltage, having a third frequency differing from the first, is applied to the drive-electrode so that a deflection of the oscillation apparatus parallel to the deflection direction is detected by the drive-electrode; and/or that a fourth AC electrical voltage, having a fourth frequency differing from the second, is applied to the detection-electrode to exert a further force effect, opposite to the force effect, on the oscillation apparatus.

Abstract: A method for manufacturing a touch input device may be provided. The method includes: a display forming step of forming a flexible display for a plurality of display devices on one carrier substrate, cutting the flexible display into individual pieces, and separating the flexible display from the carrier substrate; a pressure sensor forming step of forming a pressure sensor for the plurality of display devices on one substrate for the pressure sensor and cutting the substrate for the pressure sensor into individual pieces; and an adhering step of adhering the separated flexible display to the substrate for the pressure sensor, which has been cut into individual pieces. According to the embodiment of the present invention, the pressure sensor can be easily implemented on the flexible display.

Abstract: A pressure sensor assembly includes a sensor die and a ceramic substrate. The sensor die has a first side and a second side that is opposite to the first side. The sensor die includes a silicon chip that has a diaphragm configured to be exposed to a working fluid. The sensor die includes one or more electrical sensing elements mounted on the diaphragm and configured to measure a pressure of the working fluid. The sensor die is mounted to the ceramic substrate via a solder layer that engages the ceramic substrate and the second side of the sensor die.

Abstract: A microelectromechanical system (MEMS) device includes a processing die, a MEMS die and a plurality of wires. The MEMS die includes a substrate and a MEMS element. The substrate has a first surface, and the first surface includes a circuit and a plurality of first conductive contacts electrically connected with the circuit. The MEMS element has a second surface, a third surface and at least one second conductive contact, wherein the MEMS element is disposed on the first surface of the substrate with the second surface facing the substrate, and the at least one second conductive contact is disposed on the third surface of the MEMS element. The wires electrically connect the substrate and the MEMS element of the MEMS die to the processing die through the first conductive contacts and the second conductive contact respectively.

Abstract: Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.

Abstract: A flexure includes a support first end connected to a first frame; a support second end connected to a second frame; and a buckled section connecting the first support end to the second support end. The length of the flexure is substantially greater than its width, and the width of the flexure is substantially greater than its thickness. During operation, the flexure is maintained in a buckled state where the flexure's stiffness is significantly less than in the unbuckled state. In one implementation, a stage includes a flexure array joining a first frame and a second frame, where: the first frame and the second frame are substantially on a plane; the flexure array is substantially on the plane prior to buckling by the flexures of the flexure array; and the flexure array is bent substantially out of the plane after buckling by the flexures.

Abstract: A pressure sensor includes an elongate body which deforms in response to an applied pressure having a cavity formed therein. An isolation diaphragm seals the cavity from a process fluid and is configured to deflect in response to applied process pressure from the process fluid. An isolation fill fluid in the cavity applies pressure to the elongate body in response to deflection of the isolation diaphragm thereby causing deflection of the elongate body. A deformation sensor is coupled to the elongate body and provides a sensor output in response to deformation of the elongate body which is indicative of the process pressure.

Abstract: Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.

Abstract: A film speaker includes a metal foil; a diaphragm apart from and opposed to the metal foil, an elastomer for supporting the diaphragm, and a voice coil disposed on the metal foil for producing magnetic field. The diaphragm includes a number of diaphragms. The elastomer includes a main body and a number of partition portions for dividing the elastomer into a number of vibration areas, each of the vibration areas corresponding to one of the number of diaphragms. The voice coil includes a number of voice coils corresponding to the vibration areas. Each of the diaphragms includes a substrate layer and a magnetic material layer attached to a surface of the substrate layer for interacting with the magnetic field produced by the voice coils so as to drive the diaphragms to vibrate for generating sound.

Abstract: An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity through a via formed into the membrane layer.

Abstract: An electronic device includes: a substrate; a piezoresistive element which is disposed on the side of the surface on one side of the substrate; a wall section which is disposed to surround the piezoresistive element in a plan view of the substrate, on the side of the surface on one side of the substrate; via wiring which is disposed on the side of the surface on one side of the substrate; and a covering layer which is disposed away from the via wiring in the plan view on the side opposite to the substrate with respect to the wall section and configures a cavity portion along with the substrate and the wall section.

Abstract: The present disclosure relates an integrated chip having one or more MEMS devices. In some embodiments, the integrated chip has a carrier substrate with one or more cavities disposed within a first side of the carrier substrate. A dielectric layer is disposed between the first side of the carrier substrate and a first side of a micro-electromechanical system (MEMS) substrate. The dielectric layer has sidewalls that are laterally set back from sidewalls of openings extending through the MEMs substrate to the one or more cavities. A bonding structure, including an intermetallic compound having a plurality of metallic elements, abuts a second side of the MEMS substrate and is electrically connected to a metal interconnect layer within a dielectric structure disposed over a CMOS substrate.

Abstract: A signal transmission board includes a substrate, a conductive via, a cavity and a connecting hole. The substrate has a first external surface and a second external surface. The conductive via penetrating through the substrate has a first end and a second end. The first end is disposed on the first external surface, and the second end is disposed on the second external surface. The cavity is disposed in the substrate and penetrated by the conductive via. The connecting hole disposed on the substrate has a third end and a fourth end. The third end is disposed on the first external surface, and the fourth end communicates with the cavity.

Abstract: An apparatus for measuring a pressure includes a semiconductor die and a circuit board. The semiconductor die includes a micro-mechanical element generating a measurement signal indicating information on an external pressure applied to the micro-mechanical element. The semiconductor die further includes an output interface providing the measurement signal. The circuit board includes at least one electrically-conductive line and an opening. The semiconductor die is attached to the circuit board, so that the micro-mechanical element faces the whole of the circuit board and the at least on electrically-conductive line is connected to the output interface.

Abstract: An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.

Abstract: The present invention relates to a device comprising an elongate resonator beam extending between first and second ends. A base is connected to the resonator beam at the first end with the second end extending from the base as a structural layer. The elongate resonator beam comprises either: (1) a first oxide layer on a first piezoelectric stack layer over a structural layer on a second oxide layer over a second piezoelectric stack layer on a third oxide layer or (2) a first oxide layer on a first piezoelectric stack layer over a second oxide layer on a structural layer over a third oxide layer on a second piezoelectric stack over a fourth oxide layer. Also disclosed is a system comprising an apparatus and the device, as well as methods of making and using the device.

Abstract: A microelectromechanical systems (MEMS) die includes a substrate having a recess formed therein and a cantilevered platform structure. The cantilevered platform structure has a platform and an arm extending from the platform, wherein the platform and arm are suspended over the recess. The arm is fixed to the substrate and is a sole attachment point of the platform to the substrate. A MEMS device resides on the platform. Fabrication methodology entails forming the recess in the substrate, with the recess extending inwardly from a surface of the substrate, and attaching a structural layer over the recess and over the surface of the substrate. The MEMS device is formed on the structural layer and the structural layer is removed around a perimeter of the platform and the arm to form the cantilevered platform structure.

Abstract: A MEMS microphone has reduced parasitic capacitance. The microphone includes a trench electrically separating an acoustically active section of a backplate from an acoustically inactive section of the backplate.

Abstract: Embodiments of a method for forming a suspended membrane include depositing a first electrically conductive material above a sacrificial layer and within a boundary trench. The first electrically conductive material forms a corner transition portion above the boundary trench. The method further includes removing a portion of the first electrically conductive material that removes at least a portion of uneven topography of the first electrically conductive material. The method further includes depositing a second electrically conductive material. The second electrically conductive material extends beyond the boundary trench. The method further includes removing the sacrificial layer through etch openings and forming a cavity below the second electrically conductive material. The first electrically conductive material defines a portion of a sidewall boundary of the cavity.

Abstract: An electrostatically steerable actuator includes a gimbaled platform. A central portion of a rear side of the platform extends outward from the platform. A diameter of the central portion is substantially smaller than a corresponding diameter of the platform. An array of electrodes faces the rear side of the platform to provide an adjustable electrostatic field for tilting the platform.

Abstract: Methods are directed to checking a pressure sensor comprising a reversibly deformable, in particular reversibly bendable measuring element which supplies a measurement signal having a value depending on the degree of deformation of said measuring element, to the effect of whether the pressure sensor withstands a required maximum pressure which is larger by a predeterminable factor than a nominal pressure for which the sensor is designed. The methods generally involve use of a reference pressure sensor, which is structurally identical to the pressure sensor to be checked, for generating a distance/pressure characteristic curve and for evaluating the critical pressure required for breaking the measuring element. The critical pressure can then be used to determine if a particular value of pressure is larger than the required maximum pressure that the pressure sensor to be checked is intended to withstand.

Abstract: A memory device includes a memory cell storing data as stored data, an output signal line, and a wiring to which a voltage is applied. The memory cell includes a comparison circuit performing a comparison operation between the stored data and search data and taking a conduction state or a non-conduction state in accordance with the operation result, and a field-effect transistor controlling writing and holding of the stored data. A voltage of the output signal line is equal to the voltage of the wiring when the comparison circuit is in the conduction state.

Abstract: An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the housing. An external mechanism outside of the housing is configured so as to form an obstacle to diffusion of a fluid out of the housing through the at least one aperture. At least one through-metallization passes through the external mechanism and penetrates into the housing through the aperture in order to make contact with at least one element of the metal device.

Abstract: A micro electro mechanical system (MEMS) structure includes a first substrate structure including a bonding pad structure. The bonding pad structure has at least one recess therein. A second substrate structure is bonded with the bonding pad structure of the first substrate structure.

Abstract: Methods and apparatus for forming MEMS devices. An apparatus includes at least a portion of a semiconductor substrate having a first thickness and patterned to form a moveable mass; a moving sense electrode forming the first plate of a first capacitance; at least one anchor patterned from the semiconductor substrate and having a portion that forms the second plate of the first capacitance and spaced by a first gap from the first plate; a layer of semiconductor material of a second thickness patterned to form a first electrode forming a first plate of a second capacitance and further patterned to form a second electrode overlying the at least one anchor and forming a second plate spaced by a second gap that is less than the first gap; wherein a total capacitance is formed that is the sum of the first capacitance and the second capacitance. Methods are disclosed.

Abstract: A manufacturing method for a cap, for a hybrid vertically integrated component having a MEMS component a relatively large cavern volume having a low cavern internal pressure, and a reliable overload protection for the micromechanical structure of the MEMS component. A cap structure is produced in a flat cap substrate in a multistep anisotropic etching, and includes at least one mounting frame having at least one mounting surface and a stop structure, on the cap inner side, having at least one stop surface, the surface of the cap substrate being masked for the multistep anisotropic etching with at least two masking layers made of different materials, and the layouts of the masking layers and the number and duration of the etching steps being selected so that the mounting surface, the stop surface, and the cap inner side are situated at different surface levels of the cap structure.

Abstract: The semiconductor device has a sensor unit including a sensing part, and a semiconductor substrate. The semiconductor substrate is bonded to the sensor unit through an insulation film such that the sensing part is disposed in an air-tightly sealed chamber provided between a recessed portion of the semiconductor substrate and the sensor unit. A surface of the semiconductor substrate provided on a periphery of the recessed portion includes a boundary region at a perimeter of the recessed portion and a bonding region on a periphery of the boundary region. The bonding region has an area greater than an area of the boundary region. The bonding region of the semiconductor substrate is bonded to the sensor unit through the insulation film.

Abstract: A method of fabricating a sensor device includes forming a plurality of sensor structures on a wafer, covering the plurality of sensor structures with a polymer layer, and dicing the wafer into a plurality of die while each sensor structure remains covered by the polymer layer.

Abstract: The present invention generally relates to MEMS devices and methods for their manufacture. The cantilever of the MEMS device may have a waffle-type microstructure. The waffle-type microstructure utilizes the support beams to impart stiffness to the microstructure while permitting the support beam to flex. The waffle-type microstructure permits design of rigid structures in combination with flexible supports. Additionally, compound springs may be used to create very stiff springs to improve hot-switch performance of MEMS devices. To permit the MEMS devices to utilize higher RF voltages, a pull up electrode may be positioned above the cantilever to help pull the cantilever away from the contact electrode.

Abstract: Integrated circuits with memory elements are provided. A memory element may include a storage circuit coupled to data lines through access transistors. Access transistors may be used to read data from and write data into the storage circuit. An access transistor may have asymmetric source-drain resistances. The access transistor may have a first source-drain that is coupled to a data line and a second source-drain that is coupled to the storage circuit. The second source-drain may have a contact resistance that is greater than the contact resistance associated with the first source-drain. Access transistors with asymmetric source-drain resistances may have a first drive strength when passing a low signal and a second drive strength when passing a high signal to the storage circuit. The second drive strength may be less than the first drive strength. Access transistors with asymmetric drive strengths may be used to improve memory read/write performance.

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate in which a cavity is formed, which is delimited by lateral walls and by a top and a bottom wall. In order to form a flexible connection to the region of the semiconductor substrate, the top or bottom wall is provided with trenches around the cavity, and bending webs are formed between said trenches. At least one measuring element that is sensitive to mechanical stresses is formed within at least one of said bending webs. Within the central region surrounded by the trenches, the top or bottom wall comprises a plurality of depressions reducing the mass of the central region and a plurality of stiffening braces separating the depressions.

Abstract: Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.

Abstract: The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during overetching periods of DRIE processes.

Abstract: Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces are disclosed. In one embodiment, a microelectronic assembly comprises a support member having a first side and a projection extending away from the first side. The assembly also includes a plurality of conductive traces at the first side of the support member. Some of the conductive traces include bond sites carried by the projection and having an outer surface at a first distance from the first side of the support member. The assembly further includes a protective coating deposited over the first side of the support member and at least a portion of the conductive traces. The protective coating is generally co-planar with the outer surface of the bond sites carried by the projection.

Abstract: A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.

Abstract: A micro-electromechanical system (MEMS) device includes a housing and a base. The base includes a port opening extending therethrough and the port opening communicates with the external environment. The MEMS die is disposed on the base and over the opening. The MEMS die includes a diaphragm and a back plate and the MEMS die, the base, and the housing form a back volume. At least one vent extends through the MEMS die and not through the diaphragm. The at least one vent communicates with the back volume and the port opening and is configured to allow venting between the back volume and the external environment.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming a wiring layer on a substrate comprising actuator electrodes and a contact electrode. The method further includes forming a MEMS beam above the wiring layer. The method further includes forming at least one spring attached to at least one end of the MEMS beam. The method further includes forming an array of mini-bumps between the wiring layer and the MEMS beam.

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.

Abstract: A pressure sensor device is assembled by forming cavities on a surface of a metal sheet and then forming an electrically conductive pattern having traces and bumps over the cavities. An insulating layer is formed on top of the pattern and then processed to form exposed areas and die attach areas on the surface of the metal sheet. The exposed areas are plated with a conductive metal and then electrically connected to respective ones of the bumps. A gel is dispensed on the die attach areas and sensor dies are attached to respective die attach areas. One or more additional semiconductor dies are attached to the insulating layer and bond pads of these dies are electrically connected to the exposed plated areas. A molding compound is dispensed such that it covers the sensor die and the additional dies. The metal sheet is removed to expose outer surfaces of the bumps.

Abstract: An apparatus is formed on a substrate including at least one semiconductor device. The apparatus includes a microelectromechanical system (MEMS) device comprising at least one of a portion of a first structural layer and a portion of a second structural layer formed above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. In at least one embodiment, the MEMS device includes a first portion of the second structural layer and a second portion of the second structural layer. In at least one embodiment, the MEMS device further comprises a gap between the first portion of the second structural layer and the second portion of the second structural layer. In at least one embodiment, the gap has a width at least one order of magnitude less than the thickness of the second structural layer.

Abstract: A method for manufacturing a micromechanical component is described in which a trench etching process and a sacrificial layer etching process are carried out to form a mass situated movably on a substrate. The movable mass has electrically isolated and mechanically coupled subsections of a functional layer. A micromechanical component having a mass situated movably on a substrate is also described.

Abstract: Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.