Abstract: A present MEMS device includes: a semiconductor substrate in which a trench is formed; a functional element that is provided in the trench of the semiconductor substrate and includes a connection electrode; a structural member that forms a cavity surrounding the functional element; a lid portion that includes a conductive member electrically connected to the connection electrode and covers the cavity; an insulating layer that covers the main surface of the semiconductor substrate provided with the lid portion and a semiconductor circuit element; a first electrode that penetrates the insulating layer and is electrically connected to the conductive member; a second electrode that penetrates the insulating layer and is electrically connected to the semiconductor circuit element; and wiring that is provided on a surface of the insulating layer and brings the first electrode and the second electrode into electrical connection to each other.

Abstract: An implementation for an electret in a capacitive MEMS element including a pressure-sensitive diaphragm, which is produce-able using standard methods of semiconductor technology for easy integration into the manufacturing process of MEMS semiconductor elements. Such MEMS elements include at least one pressure-sensitive diaphragm including at least one deflectable diaphragm electrode of a capacitor system for signal detection and one fixed non-pressure-sensitive counter-element including at least one counter-electrode of this capacitor system, at least one electrode of the capacitor system being provided with an electrically charged electret, so that there is a potential difference between the two electrodes of the capacitor system. The electret includes at least two adjacent layers made from different dielectric materials, electrical charges being stored on their boundary surface.

Abstract: A cantilever beam structure where stress is matched and a method of manufacturing the same are provided. An example method may comprise depositing a first sub-layer of a first material with a first deposition menu and depositing a second sub-layer of the first material with a second deposition menu different from the first deposition menu. The first sub-layer and the second sub-layer can be disposed adjacent to each other to form a first layer. The method may further comprise depositing a second layer of a second material different from the first material. The first layer and the second layer can be disposed adjacent to each other. The method may further comprise matching stress between the first layer and the second layer by adjusting at least one of thicknesses of the respective sub-layers of the first layer and a thickness of the second layer.

Abstract: An electronic device includes a vibrating element that detects a predetermined physical quantity, an integrated circuit that is electrically connected to the vibrating element, and a ceramic package. The ceramic package is provided with a first external terminal and a second external terminal to which a constant potential is supplied. The first external terminal is electrically connected to the second external terminal in a first mode, and is electrically connected to an internal node of the integrated circuit in a second mode.

Abstract: A micromechanical component includes a substrate and a first oxide layer on the substrate, the first oxide layer having an aperture. The component further includes a conductive functional layer, which is provided on the first oxide layer in the region of the aperture, and a metal layer, which is provided on the functional layer, for producing a bond joint. A second oxide layer is provided on lateral faces of the functional layer for insulating the functional layer.

Abstract: An apparatus including a piezoelectric convertor layer; at least one piezoresistive layer on the piezoelectric convertor layer; and electrical conductor outputs. The at least one piezoresistive layer includes a plurality of spaced apart piezoresistive electrodes. The apparatus is configured such that when the piezoelectric convertor layer is deformed to generate a charge, at least one of the piezoresistive electrodes is stressed, where the at least one piezoresistive layer is configured to control flow of charge from the piezoelectric convertor layer. The electrical conductor outputs are electrically connected to the piezoresistive electrodes. The outputs are configured to allow the charge from the piezoelectric convertor layer to flow out of the piezoresistive electrodes.

Abstract: An accelerometer has E-shaped resilient beams to isolate stress and reduce deformation. A top cap silicon wafer and a bottom cap silicon wafer are both coupled with a measurement mass to form a capacitor. The measurement mass has a mass, range-of-motion stops, and resilient beams located within a support frame. The range-of-motion stops are coupled to the support frame by connection beams, and the mass is coupled with the range-of-motion stops by groups of E-shaped resilient beams. The ends of each resilient beam are connected to the range-of-motion stops, and the middle of each resilient beam is connected to the mass.

Abstract: A semiconductor device can include a substrate and a trace layer positioned in proximity to the substrate and including a trace for supplying an electrical connection to the semiconductor device. Conductive layers can be positioned in proximity to the trace layer and form a bond pad. A non-conductive thin film layer can be positioned between the trace layer and the conductive layers. The thin film layer can include a via to enable the electrical connection from the trace to the bond pad. A portion of the trace between the substrate and the plurality of conductive layers can have a beveled edge.

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.

Abstract: Strain sensing may be provided. First, a strain threshold for a circuit board may be determined. Then a strain capacitor may be selected that will fail when the circuit board is subjected to the strain threshold while the strain capacitor is mounted on the circuit board. The strain capacitor may be ceramic and may be in a commercially available size. The strain capacitor may then be mounted to the circuit board and monitored for failure.

Abstract: A method for producing a metal structure in a semiconductor substrate includes: producing an opening in the rear side of the semiconductor substrate in the area of the metal structure to be produced, which extends to the front side layer structure; filling the opening at least partially with a metal so that a metal structure is created which extends from the rear side of the semiconductor substrate to the front side layer structure; masking the rear side of the semiconductor substrate for a trench process for exposing the metal structure in such a way that the trench mask includes a lattice structure in an area adjacent to the metal structure; producing an isolation trench adjacent to the metal structure, the metal structure acting as a lateral etch stop and the lattice structure being laterally undercut in the trench mask; and applying a sealing layer to the mask.

Abstract: A semiconductor device package having a cavity formed using film-assisted molding techniques is provided. Through the use of such techniques the cavity can be formed in specific locations in the molded package, such as on top of a device die mounted on the package substrate or a lead frame. In order to overcome cavity wall angular limitations introduced by conformability issues associated with film-assisted molding, a gel reservoir feature is formed so that gel used to protect components in the cavity does not come in contact with a lid covering the cavity or the junction between the lid and the package attachment region. The gel reservoir is used in conjunction with a formed level setting feature that controls the height of gel in the cavity. Benefits include decreased volume of the cavity, thereby decreasing an amount of gel-fill needed and thus reducing production cost of the package.

Abstract: The present disclosure relates to a method of forming a plurality of MEMs device having a plurality of cavities with different pressures on a wafer package system, and an associated apparatus. In some embodiments, the method is performed by providing a work-piece having a plurality of microelectromechanical system (MEMs) devices. A cap wafer is bonded onto the work-piece in a first ambient environment having a first pressure. The bonding forms a plurality of cavities abutting the plurality of MEMs devices, which are held at the first pressure. One or more openings are formed in one or more of the plurality of cavities leading to a gas flow path that could be held at a pressure level different from the first pressure. The one or more openings in the one or more of the plurality of cavities are then sealed in a different ambient environment having a different pressure, thereby causing the one or more of the plurality of cavities to be held at the different pressure.

Abstract: The semiconductor device has a sensor unit including a sensing part, and a semiconductor substrate. The semiconductor substrate is bonded to the sensor unit through an insulation film such that the sensing part is disposed in an air-tightly sealed chamber provided between a recessed portion of the semiconductor substrate and the sensor unit. A surface of the semiconductor substrate provided on a periphery of the recessed portion includes a boundary region at a perimeter of the recessed portion and a bonding region on a periphery of the boundary region. The bonding region has an area greater than an area of the boundary region. The bonding region of the semiconductor substrate is bonded to the sensor unit through the insulation film.

Abstract: A micromechanical sensor device and a corresponding manufacturing method are described. The micromechanical sensor device includes a CMOS wafer having a front side and a rear side, a rewiring device formed on the front side of the CMOS wafer including a plurality of stacked printed conductor levels and insulation layers, an MEMS wafer having a front side and a rear side, a micromechanical sensor device formed across the front side of the MEMS wafer, a bond connection between the MEMS wafer and the CMOS wafer, a cavern between the MEMS wafer and the CMOS wafer, in which the sensor device is hermetically enclosed, and an exposed getter layer area applied to at least one of the plurality of stacked printed conductor levels and insulation layers.

Abstract: Embodiments of methods of fabricating a sensor device include attaching first and second die to one another to define first and second cavities in which first and second sensors of the sensor device are disposed, respectively. The second die has an opening in communication with the second cavity. The methods further include obstructing the opening, attaching a third die to the second die. The first cavity is hermetically sealed by attaching the first and second die. The second cavity is hermetically sealed by attaching the third die to the second die.

Abstract: A metal migration-proof touch panel structure is proposed to solve the problem: metal migration occurs in the active area of a metal mesh-based touch panel and causes short circuit in metal traces. The present invention is characterized in indirectly linking the ESD dummy to the ground terminal via an ESD protection element to replace the conventional design that directly connects the ESD dummy with the ground terminal. Thus, the ESD dummy and the ground terminal are normally in an open-circuit state. While ESD interference occurs, the ESD protection element an impedance approaching zero ohms and fast conducts the energy to the ground terminal to drain off the energy. The ESD protection element is a varistor or a transient voltage suppressor.

Abstract: A transparent force sensor for use in touch panel displays (touch screens) and method for fabricating the same are disclosed. The transparent force sensor is capable of detecting touch by measuring local pressure applied by a touch input to a display area of the touch screen.

Abstract: In various embodiments, a chip package is provided. The chip package may include at least one chip having a plurality of pressure sensor regions and encapsulation material encapsulating the chip.

Abstract: In a sensor module for accommodating a pressure sensor chip and for installation into a sensor housing, a module wall is connected monolithically to the module bottom and surrounds the pressure sensor chip. Multiple connecting elements which are conducted through the module wall to the outside run straight at least in the entire outside area. Furthermore, the connecting elements are exposed on their top and bottom sides for affixing and electrically connecting at least one electrical component and for electrically integrating the sensor module into the sensor housing. In this way, a two-sided use of a sensor module having an identical external geometry and identical connectors is possible.

Abstract: This document refers to apparatus and methods for a device layer of a microelectromechanical system (MEMS) sensor having vias with reduced shunt capacitance. In an example, a device layer can include a substrate having a pair of trenches separated in a horizontal direction by a portion of the substrate, wherein each trench of the pair of trenches includes first and second vertical layers including dielectric, the first and second vertical layers separated by a third vertical layer including polysilicon.

Abstract: To provide a combined sensor that can detect a plurality of physical quantities. With the combined sensor, it is possible to realize, while maintaining performance, a reduction in size and a reduction in costs by increasing elements that can be shared among respective sensors. A weight M2 and a detection electrode DTE2 used in an angular-velocity detecting section are also used as a reference capacitive element of a Z-direction-acceleration detecting section configured to detect acceleration in a Z direction. That is, in the Z-direction-acceleration detecting section, a detection capacitive element including the weight M2 and the detection electrode DTE2 configuring the angular-velocity detecting section is used as a reference capacitive element for a detection capacitive element formed by a detection electrode DTE5 and a weight M4.

Abstract: The present disclosure provides a package structure and a manufacturing method. The package structure includes a substrate, a cover, a conductive pattern, and a sensing component. The cover is disposed on the substrate. The cover and the substrate define an accommodation space. The conductive pattern includes a conductive line. The conductive line is disposed on an internal surface of the cover exposed by the accommodation space, and is electrically connected to the substrate. The sensing component is disposed on the internal surface of the cover, and is electrically connected to the conductive line.

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract: Sensor packages and methods for making a sensor device package for side mounting on a circuit board. A sensor device(s) in a mechanical layer of silicon is sandwiched between first and second layers of glass to create a wafer. A first via(s) is created in the first or second layers to expose a predefined area of the mechanical layer of silicon. A second via(s) is created in the first or second layers. The least one second via has a depth dimension that is less than a depth dimension of the first via. A metallic trace is applied between the exposed area on the mechanical layer and a portion of the second via. The wafer is sliced such that the second via is separated into two sections, thereby creating a sensor die. The sensor die is then electrically and mechanically bonded to a circuit board at the sliced second via.

Abstract: A MEMS (microelectromechanical systems) structure comprises a MEMS wafer. A MEMS wafer includes a cap with cavities bonded to a structural layer through a dielectric layer disposed between the cap and the structural layer. Unique configurations of MEMS devices and methods of providing such are set forth which provide for, in part, creating rounded, scalloped or chamfered MEMS profiles by shaping the etch mask photoresist reflow, by using a multi-step deep reactive ion etch (DRIE) with different etch characteristics, or by etching after DRIE.

Abstract: A semiconductor sensor device has a pressure sensing die and at least one other die mounted on a substrate, and electrical interconnections that interconnect the pressure sensing die and the at least one other die. An active region of the pressure sensing die is covered with a pressure sensitive gel material, and a cap having a cavity is mounted over the pressure sensing die such that the pressure sensing die is positioned within the cavity. The cap has a side vent hole that exposes the gel covered active region of the pressure sensing die to ambient atmospheric pressure outside the sensor device. Molding compound on an upper surface of the substrate encapsulates the at least one other die and at least a portion of the cap.

Abstract: According to one embodiment, a strain sensor includes a substrate, a lid, a frame, and a sensing unit. The substrate has a first surface. The lid is provided on the first surface. The frame is provided between the substrate and the lid. The frame is nonconductive and includes a magnetic body. The sensing unit is provided inside the frame between the substrate and the lid, and includes a magnetoresistance effect element.

Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased.

Abstract: An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a conductive substrate. The via (Vertical Interconnect Access), which is led to the back side of the component and which is used for the electrical contacting of functional elements realized in the layer construction, includes a connection area in the substrate that extends over the entire thickness of the substrate and is electrically insulated from the adjoining substrate by a trench-like insulating frame likewise extending over the entire substrate thickness. According to the present system, the trench-like insulating frame is filled up with an electrically insulating polymer.

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience while also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer.

Abstract: A micromechanical component for a capacitive sensor device includes first and second electrodes. The first electrode is at least partially formed from a first semiconductor layer and/or metal layer, and at least one inner side of the second electrode facing the first electrode is formed from a second semiconductor layer and/or metal layer. A cavity is between the first and second electrodes. Continuous recesses are structured into the inner side of the second electrode and sealed off with a closure layer. At least one reinforcing layer of the second electrode and at least one contact element which is electrically connected to the first electrode, to the layer of the second electrode which forms the inner side, to at least one printed conductor, and/or to a conductive substrate area, are formed from at least one epi-polysilicon layer. Also described is a micromechanical component manufacturing method for a capacitive sensor device.

Abstract: A micro-electromechanical system (MEMS) device includes a housing and a base. The base includes a port opening extending therethrough and the port opening communicates with the external environment. The MEMS die is disposed on the base and over the opening. The MEMS die includes a diaphragm and a back plate and the MEMS die, the base, and the housing form a back volume. At least one vent extends through the MEMS die and not through the diaphragm. The at least one vent communicates with the back volume and the port opening and is configured to allow venting between the back volume and the external environment.

Abstract: A pressure sensor system comprising a pressure sensor chip is disclosed. The pressure sensor chip comprises a sensing side where pressure sensing is performed and one or more interconnections where electrical connections are made at the other side of the chip. The pressure sensor comprising an integrated circuit (1) forming a substrate, the substrate comprising a membrane shaped portion adapted for being exposed to the pressure, the integrated circuit (1) comprising both pressure signal sensing components and pressure signal processing components.

Abstract: A semiconductor sensor device is assembled using a pre-molded lead frame having first and second die flags. The first die flag includes a cavity. A pressure sensor die (P-cell) is mounted within the cavity and a master control unit die (MCU) is mounted to the second flag. The P-cell and MCU are electrically connected to leads of the lead frame with bond wires. The die attach and wire bonding steps are each done in a single pass. A mold pin is placed over the P-cell and then the MCU is encapsulated with a mold compound. The mold pin is removed leaving a recess that is next filled with a gel material. Finally a lid is placed over the P-cell and gel material. The lid includes a hole that that exposes the gel-covered active region of the pressure sensor die to ambient atmospheric pressure outside the sensor device.

Abstract: The invention relates to measurement and control of mechanical values, in particular, to control of stress conditions of various structures and manufacturing sensors of resistant strain gauge type for measuring various mechanical values. It can be used in manufacturing sensors of deformation, force, pressure, movement, vibration etc. to increase accuracy in resistant strain gauge measuring at sensitivity preservation. The resistant strain gauge for deformation and pressure measuring represents a dielectric substrate with spread strain-sensing layer in state of polycrystalline film, which contains samarium sulfide, and metal contact pads. Pads are placed on the same side of a film and output signals are soldered to them. Strain-sensing layer comprises holes which connect the pads. According to the first option, strain-sensing layer has the following composition Sm1?xLnxS, where Ln is one from the elements: La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu, Y, at 0<x<0.3.

Abstract: A package device for a microelectromechanical inertial sensor comprises a ceramic substrate having an upper accommodation space and a lower accommodation and having a plurality of interconnect metal lines thereinside; a microelectromechanical system (MEMS) chip mounted inside the upper accommodation of the ceramic substrate and electrically connected with the interconnect metal lines; a top cover arranged on the ceramic substrate and sealing the upper accommodation space; and an integrated circuit (IC) chip mounted inside the lower accommodation space and electrically connected with the interconnect metal lines. The present invention can improve the reliability of components, increase the yield and decrease the fabrication cost.

Abstract: A pressure sensor includes a first housing having a cavity. The pressure sensor further includes a pressure sensing device attached to a bottom of the cavity. The pressure sensor further includes a layer of gel over the pressure sensing device. The pressure sensor further includes a baffle in contact with the gel to reduce movement of the gel.

Abstract: A semiconductor substrate of a semiconductor device has a sensor region and an integrated circuit region, and a cavity is formed immediately under a surface layer portion of the sensor region. A capacitive acceleration sensor is formed on the sensor region by working a surface layer portion of the semiconductor substrate opposed to the cavity. The capacitive acceleration sensor includes an interdigital fixed electrode and an interdigital movable electrode. A CMIS transistor is formed on the integrated circuit region. The CMIS transistor includes a P-type well region and an N-type well region formed on the surface layer portion of the semiconductor substrate. A gate electrode is opposed to the respective ones of the P-type well region and the N-type well region through a gate insulating film formed on a surface of the semiconductor substrate.

Abstract: A sensor comprises a substrate (16) and a sensor element (20) anchored to the substrate (16), the substrate (16) and sensor element (20) being of dissimilar materials and having different coefficients of thermal expansion, the sensor element (20) and substrate (16) each having a generally planar face arranged substantially parallel to one another, the sensor further comprising a spacer (26), the spacer (26) being located so as to space at least part of the sensor element (20) from at least part of the substrate (16), wherein the spacer (26) is of considerably smaller area than the area of the smaller of face of the substrate (16) and that of the sensor element (20).

Abstract: There are provided a process for fabricating MEMS device that includes a plurality of through-holes capable being arranged at a high density, the through-holes having a tapered end portion. Through-holes having vertical side surfaces and tapered bottoms are provided by a processing method including the steps of: disposing quadrilateral patterning having desired dimensions on a silicon substrate having a flat surface of a crystal plane, etching the substrate to a desired depth by dry etching that can realize a high aspect ratio etching, and anisotropic wet etching the dry etched substrate with a KOH aqueous solution containing isopropyl alcohol mixed thereinto.

Abstract: A simple and cost-effective manufacturing method for hybrid integrated components including at least one MEMS element, a cap for the micromechanical structure of the MEMS element, and at least one ASIC substrate, using which a high degree of miniaturization may be achieved. The micromechanical structure of the MEMS element and the cap are manufactured in a layered structure, proceeding from a shared semiconductor substrate, by applying at least one cap layer to a first surface of the semiconductor substrate, and by processing and structuring the semiconductor substrate proceeding from its other second surface, to produce and expose the micromechanical MEMS structure. The semiconductor substrate is then mounted with the MEMS-structured second surface on the ASIC substrate.

Abstract: A pressure sensor device is assembled by forming cavities on a surface of a metal sheet and then forming an electrically conductive pattern having traces and bumps over the cavities. An insulating layer is formed on top of the pattern and then processed to form exposed areas and die attach areas on the surface of the metal sheet. The exposed areas are plated with a conductive metal and then electrically connected to respective ones of the bumps. A gel is dispensed on the die attach areas and sensor dies are attached to respective die attach areas. One or more additional semiconductor dies are attached to the insulating layer and bond pads of these dies are electrically connected to the exposed plated areas. A molding compound is dispensed such that it covers the sensor die and the additional dies. The metal sheet is removed to expose outer surfaces of the bumps.

Abstract: A physical quantity sensor includes a first sensor element, and an outer edge portion arranged in at least part of the outer periphery of the first sensor element, and a first groove extending in a first direction provided in the outer edge portion in a plan view of the outer edge portion.

Abstract: A MEMS capacitive pressure sensor is provided. The MEMS capacitive pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The capacitive pressure sensor also includes a second dielectric layer having a step surface profile formed on the first dielectric layer, and a first electrode layer having a step surface profile formed on the second dielectric layer. Further, the MEMS capacitive pressure sensor includes an insulation layer formed on the first electrode layer, and a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region. Further, the MEMS capacitive pressure sensor also includes a chamber having a step surface profile formed between the first electrode layer and the second electrode layer.

Abstract: A physical quantity sensor detects a physical quantity using a piezoresistive effect and includes a first-conductivity-type well layer disposed on a first insulating layer, a plurality of second-conductivity-type piezoresistive layers disposed on a surface side of the first-conductivity-type well layer, and a second-conductivity-type isolation layer disposed between the plurality of second-conductivity-type piezoresistive layers so as to pass through the first-conductivity-type well layer from a surface of the first-conductivity-type well layer to a surface of the first insulating layer.

Abstract: A structure having a plurality of conductive regions insulated electrically from each other comprises a movable piece supported movably above the upper face of the conductive region, the movable piece having an electrode in opposition to the conductive region, the structure being constructed to be capable of emitting and receiving electric signals through the lower face of the conductive region, the plural conductive regions being insulated by sequentially connected oxidized regions formed from an oxide of a material having through-holes or grooves.

Abstract: A method for manufacturing a micromechanical component is described in which a trench etching process and a sacrificial layer etching process are carried out to form a mass situated movably on a substrate. The movable mass has electrically isolated and mechanically coupled subsections of a functional layer. A micromechanical component having a mass situated movably on a substrate is also described.

Abstract: Aspects of a semiconductor pressure sensor device can include a semiconductor substrate having a depressed portion which forms a vacuum reference chamber, a diaphragm disposed on the front surface of the semiconductor substrate, and strain gauge resistors. The device can further include an aluminium wiring layer disposed on the semiconductor substrate, an antireflection film which is a TiN film disposed on the aluminium wiring layer, an adhesion securing and diffusion preventing layer which is a film stack of a Cr film and Pt film disposed on the TiN film, and an Au film stacked on the adhesion securing and diffusion preventing layer.

Abstract: Embodiments relate to stress sensors and methods of sensing stress. In an embodiment, a stress sensor comprises a vertical resistor. The vertical resistor can comprise, for example, an n-type resistor and can have various operating modes. The various operating modes can depend on a coupling configuration of terminals of the resistor and can provide varying piezo-coefficients with very similar temperature coefficients of resistances. Comparisons of resistances and piezo-coefficients in differing operating modes can provide a measure of mechanical stresses acting on the device.