Abstract: A method and apparatus which provide one or more electromagnetic shield layers for integrated circuit chips containing electromagnetic circuit elements are disclosed. The shield layers may be in contact with the integrated circuit chip, including magnetic memory structures such as MRAMs, or in a flip-chip carrier, or both. A printed circuit board which supports the chip may also have one or more shield layers.

Abstract: A galvanometer unit comprises a limited-rotation motor with a load element such as a mirror attached to a shaft extending from the motor. In a servo loop that controls the angular position of the mirror, a position-sensor attached to the shaft provides position feedback information. The sensor includes a rotor which is positioned at the null point of the fundamental torsional resonance mode of the rotating system, thereby essentially eliminating feedback components resulting from the resonance.

Abstract: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.

Abstract: A magneto-resistive device and a magneto-resistive effect type storage device are provided, which have improved selectivity and output signals by controlling bias to be applied. Two resistive devices are connected in series, and a magneto-resistive device is used for at least one of the resistive devices. When both of the resistive devices are magneto-resistive devices, their magnetic resistance should be controlled independently from each other, and by allowing the first magneto-resistive device to include a nonmagnetic substance of an electrical insulator and the second magneto-resistive device to include a nonmagnetic substance of a conductive substance, the second magneto-resistive device is operated as a bias control device for controlling the characteristics of the first magneto-resistive device so as to control the voltage to be applied to the storage device.

Abstract: A magnetoresistive device including a high-resistivity layer (13), a first magnetic layer (12) and a second magnetic layer (14), the first magnetic layer (12) and the second magnetic layer (14) being arranged so as to sandwich the high-resistivity layer (13), wherein the high-resistivity layer (13) is a barrier for passing tunneling electrons between the first magnetic layer (12) and the second magnetic layer (14), and contains at least one element LONC selected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer (12) and the second magnetic layer (14) contains at least one metal element M selected from Fe, Ni and Co, and an element RCP different from the metal element M; and the element RCP combines with the element LONC more easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.

Abstract: A semiconductor device with an inductance element reduces eddy current in a conductive element and secures required inductance. The semiconductor device includes a semiconductor chip and the inductance element of flat structure formed on a surface of the semiconductor chip. The semiconductor chip is fixed to the conductive element, to form a package. The element has a magnetic material to face the semiconductor chip.

Abstract: A microelectromechanical system (MEMS) device is disclosed for determining the position of a mover. The MEMS device has a bottom layer connected to a mover layer. The mover layer is connected to a mover by flexures. The mover moves relative to the mover layer and the bottom layer. The flexures urge the mover back to an initial position of mechanical equilibrium. The flexures include coupling blocks to control movement of the mover. The MEMS device determines the location of the mover by determining the capacitance between mover electrodes located on the coupling blocks of the flexures and counter electrodes located on an adjacent layer. The coupling block moves according to a determinable relationship with the mover. As the coupling block moves, the capacitance between the mover electrode and the counter electrode changes. A capacitance detector analyzes the capacitance between the electrodes and determines the position of the mover.

Abstract: A magnetic memory device includes a data ferromagnetic layer having a magnetization that can be oriented in either of two directions, a reference layer, and a spacer layer between the data and reference layers. The reference layer includes a dielectric layer, first and second conductors separated by the dielectric layer, and a ferromagnetic cladding on the first and second conductors. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.

Abstract: A means for fabrication of solenoidal inductors integrated in a semiconductor chip is provided. The solenoidal coil is partially embedded in a deep well etched into the chip substrate. The non-embedded part of the coil is fabricated as part of the BEOL metallization layers. This allows for a large cross-sectional area of the solenoid turns, thus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The fabrication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric followed by fabrication of the part of the coil that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric and planarization of same by CMP.

Abstract: A magnetic storage cell includes an active layer and a reference layer which is structured to minimize disruptions to magnetization in its active layer. The reference layer is structured so that a pair of its opposing edges overlap a pair of corresponding edges of the active layer. This may be used minimize the effects of demagnetization fields on the active layer. In addition, the reference layer may be thinned at its opposing edges to control the effects of coupling fields on the active layer and balance the demagnetization field.

Abstract: A microstructure that may be used as an electrical connection in a microfabricated electro-mechanical system (MEMS) apparatus. The microstructure may have one or more isolatable electrical connections for signal transmission. The microstructure allows a MEMS apparatus to shield signal transmissions from the effects of electromagnetic interference or conductive fluids.

Abstract: In order to dampen magnetization changes in magnetic devices, such as tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.

Abstract: A magnetoresistive device including a high-resistivity layer (13), a first magnetic layer (12) and a second magnetic layer (14), the first magnetic layer (12) and the second magnetic layer (14) being arranged so as to sandwich the high-resistivity layer (13), wherein the high-resistivity layer (13) is a barrier for passing tunneling electrons between the first magnetic layer (12) and the second magnetic layer (14), and contains at least one element LONC selected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer (12) and the second magnetic layer (14) contains at least one metal element M selected from Fe, Ni and Co, and an element RCP different from the metal element M; and the element RCP combines with the element LONC more easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.

Abstract: A high-sensitivity magnetic sensor capable of detecting a nonequilibrium spin, uses an almost-spin-polarized ferromagnetic oxide in a high-quality trilayer arrangement including an intermediate layer made of a conductive nonmagnetic oxide not reacting with a ferromagnetic metallic oxide and having a lattice matching between a spin injection layer and a spin detection layer.

Abstract: A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately biased, a Hall Effect signal can be generated whose value is directly related to the magnetization state of the ferromagnetic layer. The magnetization state of the ferromagnetic layer can be set to correspond to different values of a data item to be stored in the hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The memory device can also be fabricated to include an associated transistor (or other suitable switch) that functions as an isolation element to reduce cross-talk and as a selector for the output of the device when such is used in a memory array.

Abstract: A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an electrical characteristic that is changeable depending on an external magnetic field applied to the non-magnetic layer.

Abstract: A magnetic field sensor for measurement of the three components (Bx, By, Bz) of a magnetic field comprises a Hall-effect element (1) and an electronic circuit (22). The Hall-effect element (1) comprises an active area (18) of a first conductivity type which is contacted with voltage and current contacts (2-5 or 6-9). Four voltage contacts (2-5) are present which are connected to inputs of the electronic circuit (22). By means of summation or differential formation of the electrical potentials (V2, V3, V4, V5) present at the voltage contacts (2-5), the electronic circuit (22) derives three signals (Vx, Vy, Vz) which are proportional to the three components (Bx, By, Bz) of the magnetic field.

Abstract: A semiconductor device according to the invention is constructed as below. A charge accumulating layer which contains a magnetic substance is formed directly on a semiconductor substrate, and a gate insulating film is formed on the charge accumulating layer. Further, a gate electrode is formed on the gate insulating film, and source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween. Another semiconductor device according to the invention is constructed as below. A first gate insulating film formed on a semiconductor substrate, and a charge accumulating layer which contains a magnetic substance is formed on the first gate insulating film. Further, a second gate insulating film is formed on the charge accumulating layer, and a gate electrode is formed on the second gate insulating film. Source and drain regions formed in surface portions of the semiconductor substrate such that the gate electrode is interposed therebetween.

Abstract: A method of manufacturing a thin film merged magnetic head including an inductive write structure and a magnetoresistive sensor uses a patterned protection layer to protect a second shield/bottom pole layer in regions spaced from the pole tip of the inductive write structure. A window is provided in the protection layer. During manufacture, the configuration comprises a first shield layer, a magnetoresistive element, a second shield layer serving as a bottom pole, a protection layer, a protection window, a write gap, a top pole, and a pole tip structure. The use of a protection layer and window results in the formation of channels in the second shield layer adjacent to a pedestal that supports the inductive write structure. The channels prevent magnetic flux from extending toward the second shield layer beyond the width of the pole tip structure. This structure reduces side writing with a consequent improvement in off-track performance.

Abstract: A magnetic tunnel junction (MTJ) memory cell uses a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the free ferromagnetic layer in the MTJ stack to provide transverse and/or longitudinal bias fields to the free ferromagnetic layer. The MTJ is formed on an electrical lead on a substrate and is made up of a stack of layers.

Abstract: Planar magnetic motor (100), characterized by the fact that it comprises a plurality of magnetic poles (111, 121) made of a ferromagnetic material placed at the center of planar coils (110, 120) constituted by at least one layer of turns produced on the surface of a substrate (150) made of a ferromagnetic material, the turns being wound and connected to each other so as to combine the magnetic fluxes generated by the magnetic poles (111, 121). The invention can be used to produced magnetic motors and microactuators.

Abstract: A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately biased, a Hall Effect signal can be generated whose value is directly related to the magnetization state of the ferromagnetic layer. The magnetization state of the ferromagnetic layer can be set to correspond to different values of a data item to be stored in the hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The memory device can also be fabricated to include an associated transistor (or other suitable switch) that functions as an isolation element to reduce cross-talk and as a selector for the output of the device when such is used in a memory array.

Abstract: Disclosed is a semiconductor device with a current detector, in which a semiconductor element for current-driving a load and a current-detecting element for detecting a driving current flowing through the semiconductor element are integrated on a common semiconductor pellet, and which has: a magnetoresistance effect element which has a two layer film composed of a magnetic film and a conductive film and means for supplying the two-layer film with a constant current and which has a resistivity depending on a magnetic field generated by the driving current; wherein the magnetoresistance effect element is vertically deposited above the semiconductor element to function as the current-detecting element.

Abstract: A magnetoresistive element comprises an n-type emitter layer, a p-type base layer, and an n-type collector layer, the three layers being so arranged as to form a pn-junction with each other, an emitter ferromagnetic layer formed in contact with the n-type emitter layer, a base ferromagnetic layer formed in contact with the p-type base layer, a power source for applying, by way of the emitter ferromagnetic layer, a forward bias voltage between the n-type emitter layer and the p-type base layer, a power source for applying a backward bias voltage to the n-type collector layer and the p-type base layer and a power source for applying, by way of the base ferromagnetic layer, a bias voltage so as to inject minority carriers into the p-type base layer.

Abstract: An inductor structure includes an inductor spiral coil formed on a substrate; and a substrate contact connected to the substrate and disposed within a predetermined distance to the inductor spiral coil to increase the quality-factor (Q) characteristics associated with the inductor structure, and also does not increase eddy currents in the substrate. The substrate contact provides for implementation of the inductor structure as a spiral inductor which is integrated on a silicon substrate. The substrate contact determines the energy potential substantially adjacent to the inductor for reducing the noise level. In an implementation of an inductor in an RF circuit, the substrate contact contributes to providing an increased Q.

Abstract: A magnetic tunnel junction (MTJ) of the type using soft (low magnetic coercivity) and hard (high magnetic coercivity) ferromagnetic layers separated by an insulating tunnel barrier (a hard/soft MTJ device) is stable without loss of magnetization after repeated cycling of its magnetic state. The MTJ device is based on the discovery that the mechanism of demagnetization in a hard/soft MTJ device is via coupling of the hard ferromagnetic layer to the soft ferromagnetic layer via the formation and motion of domain walls in the soft ferromagnetic layer. The MTJ device includes adjacent ferromagnetic structures that provide a transverse biasing magnetic field to the soft ferromagnetic layer. The transverse biasing field permits coherent rotation of the magnetic moment of the soft ferromagnetic layer without the formation of magnetic domains when suitable switching fields are applied.

Abstract: A memory device consists of an array of resonant tunnel diodes in the form of pillars which are formed by selective etching. Each pillar includes first and second barriers (B1, B2) disposed between terminal regions (T1, T2) and a conductive region (CR1) between the barriers. The diameter of the pillars is typically of the order of 20-50 nm and is sufficiently small that the device exhibits first and second relatively high and low stable resistive states in the absence of an applied voltage between the terminal regions. The device can be used as a non-volatile memory at room temperature.

Abstract: A strong magnetic field is applied to a photoconductive semiconductor switch to make the opening time of the switch independent of the recombination time of the photoionized semiconductor. As a result, the switch is capable of shaping current pulses with the fidelity of an illuminating optical pulse used to activate the switch. The strong magnetic field applied to the photoconductive semiconductor switch has a strength satisfying the relationship .mu.B>1, where .mu. is the mobility of the semiconductor (in m.sup.2 /Volt Sec) and B the magnetic field (in Tesla). Such a switch acts as an insulator (magnetic insulation) to an applied electric field except during the time that the light incident thereon generates electron-hole pairs. During that time, a polarization current, proportional to the externally induced pair production rate, flows and the magnetic insulation is broken. The minimal system response time is controlled by the gyrofrequency of the carriers.

Abstract: Magnetoresistive elements according to this invention comprise magnetically soft material in close proximity to the magnetoresistive material, exemplarily a perovskite manganite. The combination results in magnetic field "amplification", with large resistance changes attainable at relatively low applied fields. The invention exemplarily is embodied in magnetic sensors, e.g., magnetoresistive read/write heads.

Abstract: A triple drain magnetic field effect transistor (MagFET) for measuring magnetic field. The disclosed MagFET has a gate, a source, a center drain and two lateral drains and generates an increased Hall voltage between the two lateral drains. The MagFET provides a high conductivity channel disposed between the center drain and the source to allow a high sense current to flow. The relationship between the sense current and the background carrier concentration of the lateral drains of the transistor are effectively reduced or decoupled in order to provide the increased Hall voltage between the lateral drains in response to a magnetic field.

Abstract: A new hybrid magnetic spin injected-FET structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid FET uses ferromagnetic materials for the source and drain, and like a conventional FET, has two operating states determined by a gate voltage, "off" and "on". The ferromagnetic layers of the hybrid FET are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the "on" state the spin injected FET has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic source and drain.

Abstract: A modified Hall Effect device can be used as a memory element for the nonvolatile storage of digital information. The novel device includes a ferromagnetic layer that covers a portion of a Hall plate and is electrically isolated from the Hall plate. The ferromagnetic layer on the Hall plate can be changed by an externally applied field, and permits the device to have two stable magnetization states (positive and negative) along an anisotropy axis, which can correspond to two different data values (0 or 1) when the device is used as a memory element. In another embodiment of the invention, the Hall plate is integrated with a conduction channel of a FET, and the ferromagnetic layer is incorporated in proximity to, or as part of the gate over the conducting channel. This device can be described as a "ferromagnetic gated FET.

Abstract: A new magnetic spin transistor is provided. This spin transistor can be used as a memory element or logic gate, such as an OR, AND, NOT, NOR and NAND gate. The state of the magnetic spin transistor logic gate is set inductively. This new magnetic spin transistor/gate can be operated with current gain. Furthermore, inductive coupling permits the linking of multiple spin transistors and spin transistor gates to perform combinational tasks. A half adder embodiment is specifically described, and other logic gates and combinations of half adders can be constructed to perform arithmetic functions as part of a microprocessor.

Abstract: A device for producing an output voltage which is proportional to an applied magnetic field. The device includes a plurality charge injection regions, a corresponding plurality of charge exit regions, and a charge transfer region. The charge transfer region includes gate electrodes which serve to propagate at least one isolated charge packet across the charge transfer region in a predetermined direction from the charge input region to the charge output region. The charge packet is subject to the applied magnetic field which is perpendicular to the charge transfer region so as to induce a resultant potential that is orthogonal to both the applied magnetic field and the predetermined direction. Furthermore, the resultant potential effects a lateral redistribution of charge carriers in the packet. A recirculation configuration allows for a recycling of the packet from the output region back to the input region in order to accommodate a continuation of the redistribution of charge carriers.

Abstract: A silicon substrate is partially removed for forming a movable center portion connected through torsional portions to a stationary portion, and current flows through a coil formed in the movable center portion so that a moving contact formed in the torsional portion comes into contact with a fixed point.

Abstract: A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and magnetoresistor materials selected such that the magnetoresistor is substantially non-adherent to the mask. InSb is preferred for the magnetoresistor, Si.sub.3 N.sub.4 for the mask and GaAs for the substrate. The non-adherence allows the mask to be substantially thinner than the magnetoresistor without impairing the removal of the mask after the magnetoresistor has been established.

Abstract: A semiconductor structure is disclosed in which two regions of semiconductor material positioned adjacent to each other have different electron mobilities. By application of a magnetic field to the device, a Hall voltage is created across the boundary region between the regions of semiconductor material to modify their resistance. By detecting the change in resistance, the device can function as a memory cell, a programmable logic device, a head for hard disk drives, a measurement tool for measuring magnetic fields, or other apparatus.

Abstract: A hybrid integrated circuit device has a magnetic sensor formed directly on a substrate by photolithography. Alternatively, a flip chip type magnetic sensor is mounted on a substrate by fusion. The magnetic sensor can be mounted on the substrate with high positional precision.

Abstract: A method for forming an oxide superconducting material by preparing first a shaped magnetic shield comprising an oxide superconductor as a matrix, and then effecting CVD and further EVD to fill in the pores of the matrix with an oxide superconductor; more specifically, it comprises introducing an oxidizing gas to said shaped magnetic shield from either inside or outside the shaped magnetic shield while introducing a material gas of said oxide superconductor from the other side thereof, and then maintaining said shaped magnetic shield at this state under a high temperature.

Abstract: A semiconductor device of a MOS structure having a p-type gate electrode has a gate electrode including at least two layers consisting of a boron-doped polysilicon layer and a polysilicon layer doped with boron and an inert material. This inert material is nitrogen or carbon.

Abstract: A magnetic field sensor is provided by a lateral bipolar transistor having a base region formed of a first conductivity type, an emitter region formed of a second conductivity type disposed in the base region for emitting charge carriers, and a collector region of the second conductivity type disposed in the base region for receiving charge carriers from the emitter region. A first and second metallic contact are connected to the collector region for splitting the collector current into first and second collector contact currents. In the presence of a magnetic field, a number of the charge carriers are deflected toward the first or the second metallic contact, depending on the orientation of the magnetic field, causing an imbalance in the first and second collector contact currents. The noise at the metallic contacts is the same as the noise of a single collector transistor which effectively correlates the noise with itself and cancels any distortion associated with the noise.