Abstract: An optical wavelength detecting device, the device including: a polarizer configured to transform an incident light into a polarized light; a detecting element configured to receive the polarized light and form a temperature difference or a potential difference between two points of the detecting element, wherein the detecting element comprises a carbon nanotube structure including a plurality of carbon nanotubes oriented along the same direction, and angles between a polarizing direction of the polarized light and an oriented direction of the plurality of carbon nanotubes is adjustable; a measuring device electrically connected to the detecting element and configured to measure the temperature difference or the potential difference; a data processor electrically connected to the measuring device and configured to obtain the optical wavelength by calculating and analyzing the temperature difference or the potential difference.

Abstract: A solid-state image pickup device has an image pickup pixel including a first photoelectric conversion portion and a first transistor and a focus detection pixel including a second photoelectric conversion portion, a second transistor, and a light shielding portion, in which a reflection preventing portion is provided on the underface side of the light shielding portion.

Abstract: The present invention relates to a camera module, the camera module including a base formed at an upper surface of a PCB (Printed Circuit Board) mounted with an image sensor, and formed with an IRCF (Infrared Cut Filter) at a position corresponding to that of the image sensor, a bobbin vertically reciprocatively formed at an upper surface of the base, and having a bobbin screw thread at an upper surface, a lens barrel formed with a lens barrel screw thread at an outer surface for being screw-connected to an interior of the bobbin and mounted with at least one or more lenses, and a foreign object blocking unit formed at a screw-connected portion between the bobbin and the lens barrel to prevent sticky and adhesive foreign objects from being transmitted to an IRCF (Infrared Cut Filter) in the course of screw-connection between the lens barrel and the bobbin.

Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.

Abstract: The present disclosure relates to optical receiver systems. An example optical receiver system includes a first substrate with a plurality of photodetectors and a bias circuit. The bias circuit is electrically coupled to each photodetector of the plurality of photodetectors. The bias circuit is configured to provide a bias voltage to each photodetector. The optical receiver system also includes a plurality of capacitors. Each capacitor of the plurality of capacitors is electrically-coupled to a respective photodetector of the plurality of photodetectors. The optical receiver system also includes a second substrate with a read-out circuit having a plurality of channels. Each channel of the plurality of channels is capacitively-coupled to a respective photodetector via the respective capacitor.

Abstract: The present disclosure discloses a camera lens and a calibration method of field-depth for the camera lens. The camera lens includes a lens module, a central processing unit and a thermal expansion compensation module. The lens module includes a first lens and a second lens with a baseline length b2 to the first lens. The first lens includes a first lens unit formed on same glass substrate and a second lens unit with a baseline length b1 to the first lens unit. The baseline length change value between the second lens and the first lens can be calculated. Therefore the thermal expansion of the camera lens can be calibrated.

Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; a near infrared (NIR) quantum efficiency (QE) enhancement structure comprising at least two NIR QE enhancement elements within a region of the photodiode, wherein the NIR QE enhancement structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve an

Abstract: An image pickup device according to the present technique includes an on-chip lens, a low-refractive-index layer, and an infrared absorption layer. The on-chip lens is formed of a high-refractive-index material. The low-refractive-index layer is formed flat on the on-chip lens and formed of a low-refractive-index material. The infrared absorption layer is formed of an infrared absorption material and laminated as a higher layer than the low-refractive-index layer. The infrared absorption material includes an infrared absorption pigment and a binder resin, the binder resin, being a synthetic resin constituted of a siloxane skeleton alone or a synthetic resin constituted of a siloxane skeleton part and a partial skeleton having a low reaction activity in an oxygen part.

Abstract: An image sensor includes a substrate that further includes a sensor array and a heat spreading layer on a surface of the substrate. The heat spreading layer may include one or more of a synthetic diamond layer, a graphene layer, or a diamond-like carbon (DLC) layer. The heat spreading layer enables substantially uniform distribution of heat through at least a portion of the sensor array. Such substantially uniform heat distribution may enable substantially uniform dark current in the portion of the sensor array, thereby reducing a probability of dark shading in the portion of the sensor array. The portion of the sensor array may include an active pixel sensor area. The portion of the sensor array may include an optical black sensor area.

Abstract: An imaging device that includes an array of photo detectors each configured to generate an electrical signal in response to received light, and an array of color filters disposed over the array of photo detectors such that the photo detectors receive light passing through the color filters. Each of the color filters has a color transmission characteristic, which vary. To even out color balance, some of the color filters are disposed over a plurality of the photo detectors while others are disposed over only one of the photo detectors. Additional color balance can be achieved by varying the relative area sizes of the color filters and underlying photo detectors based on color transmission characteristics, to compensate for the varying absorption coefficient of the photo detectors at different colors.

Abstract: A dual band infrared and ultraviolet radiation detector having an ultraviolet radiation detector embedded within a pair of IR anti-reflection layers wherein a first one of the infrared anti-reflection layer reflects ultraviolet energy passing through from the semiconductor, ultraviolet radiation detector back to the semiconductor, ultraviolet radiation detector.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: A method comprising coupling a circuit to an opto-electronic package via an anisotropic conductive film (ACF), wherein the opto-electronic package is configured to communicate electrical signals via the coupling at a maximum frequency of about 10 gigahertz (GHz) to about 40 GHz. An apparatus comprising, an opto-electronic package comprising a plurality of first electrodes, and a circuit comprising a plurality of second electrodes, wherein at least one of the first electrodes is coupled to at least one of the second electrodes via an ACF, and wherein the opto-electronic package is configured to communicate electrical signals via the coupling at a maximum frequency of about 10 GHz to about 40 GHz.

Abstract: A stereo camera system useful in, for example, range finding applications. The system is designed for simple manufacture and long term stability. It includes a thermally stable substrate onto which are mounted multiple imagers. The relative positions of the imagers and corresponding optical elements are maintained in precise alignment.

Abstract: Manufacturing opto-electronic modules (1) includes providing a substrate wafer (PW) on which detecting members (D) are arranged; providing a spacer wafer (SW); providing an optics wafer (OW), the optics wafer comprising transparent portions (t) transparent for light generally detectable by the detecting members and at least one blocking portion (b) for substantially attenuating or blocking incident light generally detectable by the detecting members; and preparing a wafer stack (2) in which the spacer wafer (SW) is arranged between the substrate wafer (PW) and the optics wafer (OW) such that the detecting members (D) are arranged between the substrate wafer and the optics wafer. Emission members (E) for emitting light generally detectable by the detecting members (D) can be arranged on the substrate wafer (PW). Single modules (1) can be obtained by separating the wafer stack (2) into separate modules.

Abstract: A device includes a semiconductor substrate, a plurality of micro-lenses disposed on the substrate, each micro-lens being configured to direct light radiation to a layer beneath the plurality of micro-lenses. The device further includes a transparent layer positioned between the plurality of micro-lenses and the substrate, the transparent layer comprising a structure that is configured to block light radiation that is traveling towards a region between adjacent micro-lenses, wherein the structure and the transparent material are coplanar at respective top surfaces and bottom surfaces thereof.

Abstract: The present invention intends to provide a solid-state imaging device having minimum production costs and high detection accuracy.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has a first redistribution layer, a first die over the first redistribution layer, a molding compound encapsulating at least one second die and at least one third die disposed on the first redistribution layer, and at least one fourth die and conductive elements connected to the first redistribution layer. Through vias of the first die are electrically connected to through interlayer vias penetrating through the molding compound and are electrically connected to the first redistribution layer. The semiconductor package may further include a second redistribution layer disposed on the molding compound and between the first die, the second die and the third die.

Abstract: A Single-Photon Avalanche Diode (SPAD) is disclosed. The SPAD may include an active region for detection of incident radiation, and a cover configured to shield part of the active region from the incident radiation. An array is also disclosed and includes SPADs arranged in rows and columns. A method for making the SPAD is also disclosed.

Abstract: The present technology relates to solid-state image sensor and an imaging system which are capable of providing a solid-state image sensor and an imaging system which are capable of realizing a spectroscopic/imaging device for visible/near-infrared light having a high sensitivity and high wavelength resolution, and of achieving two-dimensional spectrum mapping with high spatial resolution.

Abstract: The present application relates to a method to simplify the scribe line opening filling processes, and to further improve the surface uniformity of the conductive pad fabrication process. A passivation layer is formed over a semiconductor substrate, and a scribe line opening is formed through the passivation layer and the semiconductor substrate. To fill the scribe line opening, a first dielectric layer is formed within the scribe line opening over the conductive pad and extending over the passivation layer. The first dielectric layer is formed by a selective deposition process such that the first dielectric layer is formed on the conductive pad at a deposition rate greater than that formed on the passivation layer.

Abstract: The present disclosure relates to a CMOS image sensor having a doped region, arranged between deep trench isolation structures and an image sensing element, and an associated method of formation. In some embodiments, the CMOS image sensor has a pixel region disposed within a semiconductor substrate. The pixel region has an image sensing element configured to convert radiation into an electric signal. A plurality of back-side deep trench isolation (BDTI) structures extend into the semiconductor substrate on opposing sides of the pixel region. A doped region is laterally arranged between the BDTI structures and separates the image sensing element from the BDTI structures and the back-side of the semiconductor substrate. Separating the image sensing element from the BDTI structures prevents the image sensing element from interacting with interface defects near edges of the BDTI structures, and thereby reduces dark current and white pixel number.

Abstract: A solid-state imaging device includes a first substrate and a second substrate electrically connected to the first substrate. The first substrate includes a first semiconductor layer and one or more first wiring layers. The second substrate includes a second semiconductor layer and one or more second wiring layers. The first photoelectric conversion element overlaps any of the one or more first wiring layers at all positions on the first photoelectric conversion element in a planar view of the first substrate. The second photoelectric conversion element does not overlap any of the one or more first wiring layers at some positions on the second photoelectric conversion element in the planar view of the first substrate.

Abstract: A method of forming an organic semiconductor includes forming a thin film transistor (“TFT”) backplane; forming a pixel well over the TFT backplane using a photoresist; performing a first plasma etch of the pixel well; stripping the photoresist in the pixel well; performing a second plasma etch of the pixel well; performing a first wash of the pixel well; exposing the pixel well to ultraviolet light; performing a second wash of the pixel well; and forming an organic photodiode in the pixel well.

Abstract: A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within a range of wavelengths, the first portion being surrounded by a second portion that is inactive. A material, covering the first portion, is selectively arranged into a hydrophilic layer by an electrochemical process. The second portion comprises a hydrophobic material on an upper surface opposite the substrate. The method further comprises the following steps: spraying on the upper surfaces of the first and second portions a liquid comprising a transparent material, and forming a converging lens containing the material, above the first portion.

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material between a first side and a second side of the semiconductor material. The image sensor also includes a plurality of hybrid deep trench isolation (DTI) structures disposed in the semiconductor material, where individual photodiodes in the plurality of photodiodes are separated by individual hybrid DTI structures. The individual hybrid DTI structures include a shallow portion that extends from the first side towards the second side of the semiconductor material, and the shallow portion includes a dielectric region and a metal region such that at least part of the dielectric region is disposed between the semiconductor material and the metal region. The hybrid DTI structures also include a deep portion that extends from the shallow portion and is disposed between the shallow portion and the second side of the semiconductor material.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: An image sensor includes a semiconductor material including a plurality of photodiodes disposed in the semiconductor material. The image sensor also includes a first insulating material disposed proximate to a frontside of the semiconductor material, and an interconnect disposed in the first insulating material proximate to the frontside of the semiconductor material. A metal pad extends from a backside of the semiconductor material through the first insulating material and contacts the interconnect. A metal grid is disposed proximate to the backside of the semiconductor material, and the semiconductor material is disposed between the metal grid and the first insulating material disposed proximate to the frontside.

Abstract: An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g., green and red) may be disposed on respective ones of the first and second pixel regions.

Abstract: Provided is a solid-state imaging apparatus, including pixels each including: a photoelectric conversion unit; a charge accumulation unit; a transistor including a control electrode; a waveguide; and a light-shielding portion. The waveguide includes an incident portion and an output portion, the light-shielding portion includes a first portion that covers the control electrode of the transistor and a second portion that covers a part of the photoelectric conversion unit, the output portion and the photoelectric conversion unit are arranged with an interval therebetween, the interval between the output portion and the photoelectric conversion unit is larger than an interval between a lower end of the second portion of the light-shielding portion and the photoelectric conversion unit, and the interval between the output portion and the photoelectric conversion unit is smaller than an interval between an upper end of the second portion of the light-shielding portion and the photoelectric conversion unit.

Abstract: An image sensor device, as well as methods therefor, is disclosed. This image sensor device includes a substrate having bond pads. The substrate has a through substrate channel defined therein extending between a front side surface and a back side surface thereof. The front side surface is associated with an optically-activatable surface. The bond pads are located at or proximal to the front side surface aligned for access via the through substrate channel. Wire bond wires are bonded to the bond pads at first ends thereof extending away from the bond pads with second ends of the wire bond wires located outside of an opening of the channel at the back side surface. A molding layer is disposed along the back side surface and in the through substrate channel. A redistribution layer is in contact with the molding layer and interconnected to the second ends of the wire bond wires.

Abstract: Provided is an optical sensor mounting structure which is used in an image display device and in which the gap between a reflection sheet and a tubular cushion for preventing the entry of external light into an optical sensor is eliminated so that the amount of light from a backlight can be measured accurately. A liquid crystal image display device includes an optical sensor that measures light from the back surface of a reflection sheet, a substrate having the optical sensor thereon, and a tubular cushion for preventing the entry of external light into the optical sensor. The front surface of the tubular cushion is bonded to the reflection sheet, and the back surface thereof is bonded to the substrate.

Abstract: Methods and systems for reducing electrical disturb effects between thyristor memory cells in a memory array are provided. Electrical disturb effects between cells are reduced by using a material having a reduced minority carrier lifetime as a cathode line that is embedded within the array. Disturb effects are also reduced by forming a potential well within a cathode line, or a one-sided potential barrier in a cathode line.

Abstract: A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.

Abstract: An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

Abstract: An imaging apparatus that forms an image of a light beam transmitted through an imaging lens on an imaging element includes a laminated material that is provided on the imaging element, the light beam being transmitted through the laminated material, the laminated material being provided at a position at which an end portion of an upper surface of the laminated material allows an outermost light beam out of light beams to be transmitted therethrough, the light beams entering a pixel in an outer end portion of the imaging element in an effective pixel area, the position having a width Hopt.

Abstract: An LED leadframe or LED substrate includes a main body portion having a mounting surface for mounting an LED element thereover. A reflection metal layer serving as a reflection layer for reflecting light from the LED element is disposed over the mounting surface of the main body portion. The reflection metal layer comprises an alloy of platinum and silver or an alloy of gold and silver. The reflection metal layer efficiently reflects light emitted from the LED element and suppresses corrosion due to the presence of a gas, thereby capable of maintaining reflection characteristics of light from the LED element.

Abstract: A method of manufacturing chip package includes providing a semiconductor substrate having at least a photo diode and an interconnection layer. The interconnection layer is disposed on an upper surface of the semiconductor substrate and above the photo diode and electrically connected to the photo diode. At least a redistribution circuit is formed on the interconnection layer. The redistribution circuit is electrically connected to the interconnection layer. A packaging layer is formed on the redistribution circuit. Subsequently, a carrier substrate is attached to the packaging layer. A color filter is formed on a lower surface of the semiconductor substrate. A micro-lens module is formed under the color filter. The carrier substrate is removed.

Abstract: An image sensor may include a pixel array with high dynamic range functionality and phase detection pixels. The phase detection pixels may be arranged in phase detection pixel groups. Each phase detection pixel group may include three adjacent pixels arranged consecutively in a line. A single microlens may cover all three pixels in the phase detection pixel group, or two microlenses may combine to cover the three pixels in the phase detection pixel group. The edge pixels in each phase detection pixel group may have the same integration time and the same color. The middle pixel in each phase detection pixel group may have the same or different color as the edge pixels, and the same or different integration time as the edge pixels. Phase detection pixel groups may also be formed from two pixels that each are 1.5 times the size of neighboring pixels.

Abstract: A fingerprint sensor package and method are provided. The fingerprint sensor package comprises a fingerprint sensor along with a fingerprint sensor surface material and electrical connections from a first side of the fingerprint sensor to a second side of the fingerprint sensor. A high voltage chip is connected to the fingerprint sensor and then the fingerprint sensor package with the high voltage chip are connected to a substrate, wherein the substrate has an opening to accommodate the presence of the high voltage chip.

Abstract: A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.

Abstract: An image sensor includes a semiconductor layer including a first surface and a second surface, which are opposite to each other. A plurality of unit pixels is in the semiconductor layer. Each of the unit pixels includes a first photoelectric converter and a second photoelectric converter. A first isolation layer isolates adjacent unit pixels from one another. A second isolation layer is between the first photoelectric converter and the second photoelectric converter. The first isolation layer has a different shape from the second isolation layer.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: The embodiments herein describe a photonic chip (formed from a SOI structure) which includes an optical interface for coupling the optical components in the photonic chip to an external optical device. In one embodiment, the optical interface is formed on a separate substrate which is later joined to the photonic chip. Through oxide vias (TOVs) and through silicon vias (TSVs) can be used to electrically couple the optical components in the photonic chip to external integrated circuits or amplifiers. In one embodiment, after the separate wafer is bonded to the photonic chip, a TOV is formed in the photonic chip to electrically connect metal routing layers coupled to the optical components in the photonic chip to a TSV in the separate wafer. For example, the TOV may extend across a wafer bonding interface where the two substrates where bonded to form an electrical connection with the TSV.

Abstract: A low-cost and mass producible carrier part for precise mounting of optical components such as an optical fiber and optical die and associated fabrication process.

Abstract: This invention relates to a flip-chip light-emitting diode and a method for manufacturing the same. The flip-chip light-emitting diode comprises a packaging body and a conductor layer. At least one light-emitting diode chip is encapsulated in the packaging body. The light emitting diode chip has a positive electrode and a negative electrode which are exposed on a side surface of the packaging body. The conductor layer is disposed on the side surface of the packaging body and directly in contact with the positive electrode and the negative electrode of the light-emitting diode chip. The conductor layer has circuit patterns and an insulating portion insulating the positive electrode and the negative electrode of the light-emitting diode chip from each other.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to corrosion resistant chip sidewall connections with crackstop structures with a hermetic seal, and methods of manufacture. The structure includes: a guard ring structure surrounding an active region of an integrated circuit chip; an opening formed in the guard ring structure; and a hermetic seal encapsulating the opening and a portion of the guard ring structure, the hermetic seal being structured to prevent moisture ingress to the active region of the integrated circuit chip through the opening.

Abstract: A sensor package that includes a substrate with opposing first and second surfaces. A plurality of photo detectors are formed on or under the first surface and configured to generate one or more signals in response to light incident on the first surface. A plurality of contact pads are formed at the first surface and are electrically coupled to the plurality of photo detectors. A plurality of holes are each formed into the second surface and extending through the substrate to one of the contact pads. Conductive leads each extend from one of the contact pads, through one of the plurality of holes, and along the second surface. The conductive leads are insulated from the substrate. One or more trenches are formed into a periphery portion of the substrate each extending from the second surface to the first surface. Insulation material covers sidewalls of the one or more trenches.

Abstract: A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.