Abstract: A camera module and an array camera module based on an integral packing process are disclosed. The camera module or each of the camera module units of the array camera module includes a circuit board, an integral base, a photosensitive element operatively connected to the circuit board, a lens, a light filter holder installed at the integral base and a light filter installed at the light filter holder. The light filter is not required to be directly installed to the integral base, so that the light filter is protected and the requiring area of the light filter is reduced.

Abstract: An electronic component includes a semiconductor layer having a first surface coated with a first insulating layer and a second surface coated with an interconnection structure. A laterally insulated conductive pin extends through the semiconductor layer from a portion of conductive layer of the interconnection structure all the way to a contact pad arranged at the level of the first insulating layer.

Abstract: A backside illuminated image sensor with an array of pixels formed in a substrate is provided. To improve surface planarity, bond pads formed at the periphery of the array of pixels may be recessed into a back surface of the substrate. The bond pads may be recessed into a semiconductor layer of the substrate, may be recessed into a window in the semiconductor layer, or may be recessed in a passivation layer and covered with non-conductive material such as resin. In order to further improve surface planarity, a window may be formed in the semiconductor layer at the periphery of the array of pixels, or scribe region, over alignment structures. By providing an image sensor with improved surface planarity, device yield and time-to-market may be improved, and window framing defects and microlens/color filter non-uniformity may be reduced.

Abstract: Image sensor devices, design methods thereof, and manufacturing methods thereof are disclosed. In some embodiments, a design method for an image sensor device includes providing an initial design for an image sensor device. The initial design includes a pixel array region and a through-via region disposed proximate the pixel array region. The initial design has a first length between the pixel array region and the through-via region. The initial design has a second length that is a width of the through-via region. The design method includes analyzing a ratio of the second length and the first length, and modifying the initial design to achieve an optimal ratio of the second length and the first length.

Abstract: An image pickup module includes a cover, a plurality of image pickup units, a self-curing gel, and a photopolymer gel. The cover includes an upper shield, a side shield, and illumination openings and image pickup openings on the upper shield, and the upper shield and the side shield surround an accommodation space where the image pickup units are disposed. The cover at least covers a portion of upper surfaces of the image pickup units. The photopolymer gel is disposed on positions corresponding to the illumination openings that expose the photopolymer gel. The self-curing gel is disposed between the upper surfaces of the image pickup units and the upper shield. The photopolymer gel is configured to fix relative positions between the image pickup units and the cover. A manufacturing method of an image pickup module is also provided.

Abstract: In each pixel having a plurality of photodiodes for one microlens of a plurality of pixels arranged in a pixel array part, the photoelectrically converted electrons are prevented from moving between the photodiodes, thereby to improve the electron isolating characteristic, resulting in improved performances of a semiconductor device. In a well region immediately under between a first N? type semiconductor region forming a first photodiode in a pixel and a second N? type semiconductor region forming a second photodiode in the pixel, an isolation region higher in impurity density than the well region is formed.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: Provided is a semiconductor device which allows an alignment mark used for the manufacturing of a solid-state image sensor (semiconductor device) having a back-side-illumination structure to be formed in a smaller number of steps. The semiconductor device includes a semiconductor layer having a first main surface and a second main surface opposing the first main surface, a plurality of photodiodes which are formed in the semiconductor layer and in each of which photoelectric conversion is performed, a light receiving lens disposed over the second main surface of the semiconductor layer to supply light to each of the photodiodes, and a mark for alignment formed inside the semiconductor layer. The mark for alignment is formed so as to extend from the first main surface toward the second main surface and have a protruding portion protruding from the second main surface in a direction toward where the light receiving lens is disposed.

Abstract: An image sensor including a substrate, a trench isolation, a plurality of image sensing units, at least one phase detection unit, and an interconnection layer is provided. The trench isolation is in the substrate, and a plurality of active areas of the substrate are separated from each other by the trench isolation. The image sensing units and the at least one phase detection unit are in the active areas arranged in an array, and a sensing area of the at least one phase detection unit is smaller than a sensing area of each of the image sensing units. The interconnection layer is disposed on the image sensing units and the at least one phase detection unit. In addition, a method of fabricating an image sensor is also provided.

Abstract: A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

Abstract: A photoelectric transducer includes a wiring structure and a photoelectric conversion section provided on a substrate. The photoelectric conversion section includes a first electrode and a photoelectric conversion layer provided on the first electrode. The wiring structure includes a first wiring layer including a wiring pattern. The distance between the bottom face of the first electrode and the substrate is shorter than the distance between the bottom face of the wiring pattern and the substrate.

Abstract: An image sensor may include: a photoelectric conversion layer suitable for converting light into an electrical signal; a spacer layer formed over the photoelectric conversion layer, and suitable for preventing light reflection while adjusting a focus; and a first condensing layer formed at the inner bottom of the spacer layer, and suitable for condensing incident light.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

Abstract: A wafer thinning system and method are disclosed that includes grinding away substrate material from a backside of a semiconductor device. A current change is detected in a grinding device responsive to exposure of a first set of device structures through the substrate material, where the grinding is stopped in response to the detected current change. Polishing repairs the surface and continues to remove an additional amount of the substrate material. Exposure of one or more additional sets of device structures through the substrate material is monitored to determine the additional amount of substrate material to remove, where the additional sets of device structures are located in the semiconductor device at a known depth different than the first set.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: Disclosed is a light emitting module including a light emitting device package having a circuit board having a cavity, an insulation substrate arranged in the cavity, with a conductive pattern formed thereon, and at least one light emitting device disposed on the insulation substrate, with being electrically connected with the conductive pattern; and a glass cover located on the light emitting device package, with lateral surfaces, a top surface and an open bottom surface, wherein the light emitting device package and the circuit board are electrically connected with each other.

Abstract: A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer.

Abstract: A semiconductor device includes a substrate, a device layer, an anti-reflective coating layer, reflective structures, a composite grid structure, a passivation layer and color filters. The device layer is disposed on the substrate, in which trenches are formed in the device layer and the substrate. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are disposed on the anti-reflective coating layer in the trenches respectively. The composite grid structure overlies the anti-reflective coating layer and the reflective structures. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer sequentially stacked on the reflective structures. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

Abstract: A portable electronic device and an image capturing module thereof are disclosed. The image capturing module includes a circuit substrate, a structure reinforcing frame, a plurality of image sensing chips, an adhesive body, and a plurality of lens modules. The circuit substrate has a plurality of first passing openings. The structure reinforcing frame is disposed on the circuit substrate, and the structure reinforcing frame has a plurality of second passing openings respectively communicated with the first passing openings. The image sensing chips is electrically connected with the circuit substrate by wire bonding, and the image sensing chips are coplanarly disposed on a datum plane. The adhesive body is connected between each image sensing chip and the structure reinforcing frame. The lens modules are disposed on the circuit substrate, and the lens modules respectively correspond to the image sensing chips.

Abstract: An image pickup element including an image pickup unit including an array of a plurality of unit pixels, each of the plurality of unit pixels including a plurality of pixels; a saturation detection unit configured to detect a saturated pixel based on a plurality of pixel signals of a subject image output from the plurality of pixels of each of the plurality of unit pixels; a first image signal generation unit configured to generate a first image signal of the subject image by combining the plurality of pixel signals output from each of ones of the plurality of pixels; and an output unit configured to output information indicating a result of detection of the saturated pixel conducted by the saturation detection unit and the first image signal.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: It comprises a first step of preparing an object; a second step of forming a modified region in a first member along a line by irradiating the first member with laser light while using a front face of the object as a laser light entrance surface; a third step of forming a processing scar in a bonding layer along the line by irradiating the bonding layer with laser light while using the front face as a laser light entrance surface; and a fourth step, after the first to third steps, of forming a modified region in a second member along the line by irradiating the second member with laser light while using a rear face of the object as a laser light entrance surface; the fourth step uses the processing scar as a reference for alignment of a laser light irradiation position with respect to the second member.

Abstract: A color splitter, a method of manufacturing the same, and an image sensor including the same are disclosed. The color splitter includes: a color separation element that is formed of a sol-gel material having a high refractive index and exhibits a color separation characteristic; and a low-refractive index layer that has a space in which the color separation element is disposed.

Abstract: A groove-type through hole passing through a silicon layer and a first interlayer insulating film is formed in a region around a chip formation region including a photodiode. In the groove-type through hole, a wall-like wall-type conductive pass-through portion corresponding to the groove-type through hole is formed. An electrode pad is in contact with the wall-type conductive pass-through portion. The electrode pad is electrically connected to a first interconnection through the wall-type conductive pass-through portion.

Abstract: Optical interface devices and methods employing optical fibers and support member having a bend section are disclosed, wherein the optical interface device is used for optically connecting at least one photonic device to at least one optical device via at least one optical fiber. An array of optical fibers is arranged immediately adjacent a portion of the outer curved surface at the bend section. A fiber alignment member having a fiber alignment feature engages the array of optical fibers at a back-end flat portion of the support member so that end faces of the optical fibers are substantially co-planar with a bottom surface of the fiber alignment member and a back end of the support member. A securing layer disposed over the optical fiber array serves to secure the optical fiber array to the outer.

Abstract: A fiber optic connector for coupling focused radiant energy from a laser to a fiber optic conductor includes a quartz alignment ferrule that is fused mechanically and optically to the fiber's proximal end, either by an index matching first adhesive or by heat fusing the cladding to the ferrule without removing the cladding from the end of the fiber. The fiber and ferrule are attached to the fiber's proximal termination connector by a second adhesive with a high refractive index which absorbs errant radiant energy that has propagated in the fiber's cladding. The absorbed errant energy is dissipated by the connector assembly as it is converted to heat.

Abstract: A circuit board for an optoelectronic semiconductor chip includes an electrically conductive first metal foil, a first electrically insulating foil, an electrically conductive second metal foil, wherein the first electrically insulating foil is applied to the first metal foil at a top side of the first metal foil and mechanically connects thereto, the first electrically insulating foil has a recess in which the first metal foil is exposed, the recess electrically conductively fixes the optoelectronic semiconductor chip to the first metal foil within the recess, the second metal foil is applied at a top side of the first electrically insulating foil, the top side facing away from the first metal foil, and mechanically connects to the electrically insulating foil, the first electrically insulating foil is free of the second metal foil at least in the region of the recess, and the second metal foil electrically contacts the optoelectronic semiconductor chip.

Abstract: The present invention relates to a camera module in which a thin camera module can be realized at a low cost and an electronic device. The camera module includes a lens unit that stores a lens that condenses light on a light receiving surface of an image sensor; a rigid substrate on which the image sensor is disposed; and a flexible substrate electrically connected with the rigid substrate, wherein in the case where the light receiving surface of the image sensor locates at the top, the lens unit, the flexible substrate, and the rigid substrate are disposed in this order from the top.

Abstract: A semiconductor device includes a substrate, a device layer, a composite grid structure, a passivation layer and color filters. The device layer overlies the substrate. The composite grid structure overlies the device layer. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer stacked on the metal grid layer. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

Abstract: A semiconductor structure includes a semiconductive substrate includes a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate, and a conductive pad passing through the ILD, disposed in the semiconductive substrate and configured to couple with an interconnect structure disposed over the ILD, wherein a portion of the conductive pad is surrounded by the semiconductive substrate, and a step height is configured by a surface of the portion of the conductive pad and the second side of the semiconductive substrate.

Abstract: An image sensor package with a folded cover-glass sealing interface includes (a) an image sensor with a light-receiving surface, (b) a substrate having (i) a recessed surface to which the image sensor is bonded, (ii) a second surface facing in a direction parallel to optical axis of the image sensor, surrounding the recessed surface, and being further than the light-receiving surface from the recessed surface, and (iii) a third surface facing the optical axis, and adjoining and surrounding the second surface, and (c) a cover glass bonded to the substrate with a folded sealing-interface at the second surface and the third surface.

Abstract: A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated based on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.

Abstract: Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for aligning an electronic feature to a through-substrate via includes forming a self-aligned alignment feature having a wall around at least a portion of the TSV and aligning a photolithography tool to the self-aligned alignment feature. In some embodiments, the self-aligned alignment feature is defined by the topography of a seed material at a backside of the device.

Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.

Abstract: A semiconductor light receiving device includes a substrate, a semiconductor fine line waveguide provided on the substrate, and a light receiving circuit that is provided on the substrate and that absorbs light propagating through the semiconductor fine line waveguide. The light receiving circuit includes a p type first semiconductor layer, a number of second semiconductor mesa structures provided on the p type first semiconductor layer in such a manner that an n type second semiconductor layer is provided on top of an i type second semiconductor layer, a p side electrode connected to the p type first semiconductor layer in a location between the second semiconductor mesa structures, and an n side electrode connected to the n type second semiconductor layer. The refractive index and the optical absorption coefficient of the second semiconductor layers are greater than the refractive index and the optical absorption coefficient of the first semiconductor layer.

Abstract: Imager arrays, array camera modules, and array cameras in accordance with embodiments of the invention utilize pixel apertures to control the amount of aliasing present in captured images of a scene. One embodiment includes a plurality of focal planes, control circuitry configured to control the capture of image information by the pixels within the focal planes, and sampling circuitry configured to convert pixel outputs into digital pixel data. In addition, the pixels in the plurality of focal planes include a pixel stack including a microlens and an active area, where light incident on the surface of the microlens is focused onto the active area by the microlens and the active area samples the incident light to capture image information, and the pixel stack defines a pixel area and includes a pixel aperture, where the size of the pixel apertures is smaller than the pixel area.

Abstract: An imaging apparatus that forms an image of a light beam transmitted through an imaging lens on an imaging element includes a laminated material that is provided on the imaging element, the light beam being transmitted through the laminated material, the laminated material being provided at a position at which an end portion of an upper surface of the laminated material allows an outermost light beam out of light beams to be transmitted therethrough, the light beams entering a pixel in an outer end portion of the imaging element in an effective pixel area, the position having a width Hopt.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: A back side illuminated (BSI) image sensor device, includes: a substrate including a front side and a back side opposite to the front side; a radiation-sensing region disposed in the substrate; and a deep trench isolation (DTI) grid disposed in the substrate and defining the radiation-sensing region. The DTI grid extends from the back side toward the front side, and includes a segmented strip in a top view from the back side.

Abstract: Provided are an image sensor, a method of manufacturing the image sensor, and an electronic device including the image sensor. An image sensor according to an embodiment may include a photoelectric conversion element, a pixel lens formed over the photoelectric conversion element and comprising a plurality of light condensing layers, wherein an upper layer of plurality of light condensing layers has a smaller area than a lower layer, and the pixel lens comprises a color filter substance.

Abstract: An optical structure includes a Hyperuniform Disordered Solid (“HUDS”) structure, a waveguide, and a resonant cavity. The HUDS structure is formed by walled cells organized in a lattice. The waveguide is configured to guide an optical signal. The resonant cavity is formed along a boundary of the waveguide. The resonant cavity is configured to be resonant at a frequency band that is a subset of a bandwidth of the optical signal.

Abstract: A light emitting device includes a substrate, a plurality of first wiring members, a plurality of second wiring members and a plurality of light emitting elements. The first wiring members extend in a first direction. The second wiring members extend in a second direction. Each of the second wiring members is segmented into a plurality of second wiring portions. The light emitting elements are disposed along the second direction. A first electrode of the light emitting element is connected to a corresponding one of the first wiring members. A second electrode of the light emitting element has a first connection part and a second connection part that is linked to the first connection part. The first connection part and the second connection part are connected to a corresponding one of the second wiring members and bridge at least two of the segmented second wiring portions in the second direction.

Abstract: An integrated optical sensor module includes an optical sensor die having an optical sensing area on its first surface, and an application-specific integrated circuit (ASIC) die arranged over the first surface of the optical sensor die. A hole in the ASIC die is at least partially aligned with the optical sensing area such that at least some of the light passing through the hole may contact the optical sensing area. The hole through the ASIC die can be configured to receive an optical fiber, lens structure, or other optical element therein.

Abstract: A photodiode includes a cap layer defining an inboard side and an outboard side. A plurality of pixels are formed in the cap layer extending from the inboard side to the outboard side. At least a portion of the cap layer is defined in between the pixels. A metal barrier is in between the pixels and is operatively connected to the inboard side of the cap layer in between the pixels to reflect light rays into the cap layer reducing the leakage of photons between the pixels.

Abstract: A device includes two BSI image sensor elements and a third element. The third element is bonded in between the two BSI image sensor elements using element level stacking methods. Each of the BSI image sensor elements includes a substrate and a metal stack disposed over a first side of the substrate. The substrate of the BSI image sensor element includes a photodiode region for accumulating an image charge in response to radiation incident upon a second side of the substrate. The third element also includes a substrate and a metal stack disposed over a first side of the substrate. The metal stacks of the two BSI image sensor elements and the third element are electrically coupled.

Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

Abstract: According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.

Abstract: A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.