Abstract: An image sensor with an array of pixels is provided. In order to achieve high image quality, it may be desirable to improve well capacity of individual pixels within the array by forming deep photodiodes in a thick substrate. When forming the array of pixels, conductive contacts may be formed in a back surface of the substrate opposing ground contacts located on a front side of the substrate. A conductive grid layer may be formed over the conductive contacts. A color filter layer may be formed over the conductive grid layer that may include a barrier grid in which color filter material is deposited. The conductive grid layer and conductive contacts may be biased to a voltage to improve the strength of electric fields in the substrate. Conductive contacts will thereby improve charge collection and electrical isolation and prevent electrical crosstalk and blooming.

Abstract: A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations. A peripheral zone is located outside the zone of pixels. A continuous electrically conductive layer forms, in the zone of pixels, an electrode in a trench for each capacitive deep trench isolation, and forms, in the peripheral zone, a redistribution layer for electrically coupling the electrode to a biasing contact pad. The electrode is located in the trench between a trench dielectric and at least one material for filling the trench.

Abstract: An optical coupling system includes a substrate, an electronic die comprising a plurality of coupling holes for passing light, an optical element die attached to a bottom surface of the electronic die, the electronic die attached to the substrate such that the electronic die covers a cavity in the substrate and the optical element die resides within the cavity of the substrate. The system may also include a thermally conductive lid that covers and contacts the electronic die and the substrate and has a coupling aperture that enables light that passes through the coupling holes to pass through the thermally conductive lid. The system may also include an optical cable coupler comprising a coupling section that laterally fits within the coupling aperture and a body section disposed above the coupling section that is laterally larger than the coupling section. A method for providing the above system is also disclosed herein.

Abstract: In an imaging device, an image-sensor board is housed in a metallic case, and includes first and second regions. The first region includes first conductor patterns and first insulators constituting a multilayer structure, a first outermost surface on which an image sensor is mounted, and a second outermost surface. The second region includes second conductor patterns and second insulators constituting a multilayer structure. A control circuit board is electrically connected to the first conductor patterns via the second outermost surface. A thermal transfer member is disposed to be in contact with the second region of the image-sensor board for transferring heat generated from the image sensor to the case. The second conductor patterns in the second region include a closest conductor pattern located closest to the thermal transfer member. The closest conductor pattern is electrically isolated from the first conductor patterns.

Abstract: According to embodiments of the present invention, a photodetector arrangement is provided. The photodetector arrangement includes a plurality of germanium-based photodetectors, each germanium-based photodetector configured to receive an optical signal and to generate an electrical signal in response to the received optical signal, and an electrode arrangement arranged to conduct the electrical signals.

Abstract: A semiconductor device includes a carrier, a substrate, light-sensing devices and a bonding layer. The substrate overlies the carrier, and has a first surface and a second surface opposite to the first surface. The substrate includes inverted pyramid recesses in the second surface. The light-sensing devices are disposed on the first surface of the substrate. The bonding layer is disposed between the substrate and the carrier.

Abstract: An image-sensor device is provided. The image-sensor device includes a semiconductor substrate having a front surface and a back surface, and an interconnection structure formed over the front surface. The image-sensor device also includes a radiation-sensing region in the semiconductor substrate. The image-sensor device further includes an isolation structure adjacent to the radiation-sensing region. The isolation structure includes a trench extends from the back surface, and a negatively charged film extends along an interior surface of the trench.

Abstract: An interference filter includes a first substrate on which a fixed reflection film is provided, a second substrate which faces the first substrate and on which a movable reflection film is provided, a first bonding film that bonds the first substrate and the second substrate to each other, and a sealer that is disposed between the first substrate and the second substrate in a first interspace that allows a first internal space sandwiched between the first substrate and the second substrate to communicate with a space outside the interference filter, the sealer sealing the first internal space, and an inter-substrate distance between the first substrate and the second substrate in the first interspace decreases in a direction from outer circumferential edges of the substrates toward an inner portion of the first interspace in a plan view viewed in a substrate thickness direction.

Abstract: An image sensor including a color filter and a method of manufacturing the image sensor are provided. The image sensor includes a light-sensing layer configured to detect incident light, and convert the incident light to an electrical signal. The image sensor further includes a color filter layer disposed on the light-sensing layer, the color filter layer including color filters, each of the color filters being configured to transmit, among the incident light, light in a wavelength band to the light-sensing layer. The image sensor further includes an isolation layer disposed between the color filters, the isolation layer being configured to optically isolate the color filters from each other. An upper portion of each of the color filters has a cylindrical shape, and a lower portion of each of the color filters has a hemispherical shape.

Abstract: Variable index light extraction layers (100) that contain a plurality of microreplicated posts (120) are described. The variable index light extraction layers contain a plurality of microreplicated posts (120), a first region including a first lower-index substance (130) and a second region including a second higher-index substance (140). Optical films can use the variable index light extraction layers (100) in front lit or back lit display devices.

Abstract: An interposer comprising a substrate having at least a top surface and a bottom surface, the top and bottom surfaces being substantially parallel; at least one series of bottom cavities on the bottom surface; at least one expansion cavity contiguous with the at least one series of bottom cavities, the at least one expansion cavity being larger than each of the bottom cavities; a perimeter defined on the bottom surface around the bottom cavities; at least one alignment fiducial on the top surface for cooperating with a corresponding fiducial on the detachable optical interface to optically couple an optical conduit attached to the detachable optical interface with at least one optical device; and the at least one optical device mounted to the substrate on at least a portion of the perimeter, the optical device configured to emit a diverging light beam or receive a non-diverging light beam.

Abstract: A chip-scale image sensor packaging method with black masking includes (a) cutting a composite wafer having a plurality of image sensors bonded to a common glass substrate to form slots in the common glass substrate, wherein the slots define a cover glass for each of the image sensors, respectively, (b) forming black mask in the slots such that the black mask, for each of the image sensors, spans perimeter of the cover glass as viewed cross-sectionally along optical axis of the image sensors, and (c) dicing through the black mask in the slots to singulate a plurality of chip-scale packaged image sensors each including one of the image sensors and the cover glass bonded thereto, with sides of the cover glass facing away from the optical axis being at least partly covered by the black mask.

Abstract: An imaging apparatus that forms an image of a light beam transmitted through an imaging lens on an imaging element includes a laminated material that is provided on the imaging element, the light beam being transmitted through the laminated material, the laminated material being provided at a position at which an end portion of an upper surface of the laminated material allows an outermost light beam out of light beams to be transmitted therethrough, the light beams entering a pixel in an outer end portion of the imaging element in an effective pixel area, the position having a width Hopt.

Abstract: A diode is described which comprises a light-sensitive germanium region (5) located on a waveguide (2) made of silicon or silicon germanium and which has lateral dimensions in a direction transverse to a direction of light propagation in the waveguide that are identical or at most 20 nm per side shorter in comparison with the waveguide.

Abstract: An image sensor includes a light receiving element, an anti-reflection layer, a high refractive pattern, a color filter, and a micro lens. The light receiving element is formed on a semiconductor substrate to generate charges responsive to incident light. The anti-reflection layer is formed on the semiconductor substrate. The high refractive pattern is formed on the anti-reflection layer in correspondence with the light receiving element. The color filter is formed on the anti-reflection layer while covering a top surface and lateral sides of the high refractive pattern. The micro lens is formed on the color filter. The image sensor provides an image having high quality.

Abstract: A process for forming at least two different doping levels at the surface of a wafer using one photo resist pattern and implantation process step. A resist layer is developed (but not baked) to form a first resist geometry and a plurality of sublithographic resist geometries. The resist layer is baked causing the sublithographic resist geometries to reflow into a continuous second resist geometry having a thickness less that the first resist geometry. A high energy implant implants dopants through the second resist geometry but not through the first resist geometry. A low energy implant is blocked by both the first and second resist geometries.

Abstract: A thin film transistor (TFT) array substrate of a liquid crystal display (LCD) panel includes a first substrate, a gate located on the first substrate, a gate insulation layer located on the first substrate and covers the gate and the first substrate, a source layer located on the gate insulation layer to correspond to the gate, an etching stopping layer located on the source layer, and a source and a drain located on the etching stopping layer. The etching stopping layer is made of color photoresist.

Abstract: A solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements arranged into a pixel array. A color filter layer including a plurality of color filter segments is disposed above the photoelectric conversion elements. A partition grid includes a plurality of partitions, and each of the partitions is disposed between two adjacent color filter segments. The color filter layer and the partition grid are disposed in the same layer. In addition, the partitions include a first partition disposed at a center line of the pixel array and a second partition disposed at an edge of the pixel array. The second partition has a top width that is larger than the top width of the first partition.

Abstract: An optical assembly includes an image sensor, a lens module disposed over the image sensor in a first direction, a transparent glue layer, and a transparent dry adhesive layer formed of a different material than the transparent glue layer. Each of the transparent glue layer and the transparent dry adhesive layer are disposed between the image sensor and the lens module in the first direction. Each of the transparent glue layer and the transparent dry adhesive layer are optically coupled in series with the image sensor and the lens module. A method for forming an optical assembly includes joining an image sensor and a lens module using a transparent glue layer and a transparent dry adhesive layer formed of a different material than the transparent glue layer.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: The optical apparatus comprises a semiconductor substrate and at least one optics substrate. The semiconductor substrate comprises a first active region establishing a first image sensor, said semiconductor substrate further comprising an additional active region, different from said first active region. The additional active region establishes or is part of an additional sensor which is not an image sensor. And the at least one optics substrate comprises for said first image sensor at least one lens element for imaging light impinging on the optical apparatus from a front side onto the first image sensor. Preferably, at least two or rather at least three image sensors are provided, such that a computational camera can be realized. The additional sensor may comprise, e.g., an ambient light sensor and/or a proximity sensor.

Abstract: There is provided a curable resin composition which is capable of being coated on a solid-state imaging device substrate and contains a dye having a maximum absorption wavelength in a wavelength range from 600 to 850 nm, a production method of image sensor chip comprising a step of coating the curable resin composition on a solid-state imaging device substrate to form a dye-containing layer, and a step of adhering a glass substrate having an infrared ray reflecting film onto the dye-containing layer, and an image sensor chip comprising a solid-state imaging device substrate and a dye-containing layer composed of the curable resin composition.

Abstract: An embodiment of the present invention provides a method for producing a flexible display panel. The method includes the following steps of: providing a bearing substrate and a transparent substrate arranged with the flexible display panel; setting a laser irradiation path and irradiating the bearing substrate by using a laser along the set laser irradiation path to form a mark region on the bearing substrate; placing the flexible display panel on the mark region correspondingly; irradiating from a side of the transparent substrate by re-using the laser along the set laser irradiation path, to peel off the flexible display panel from the transparent substrate; and separating the flexible display panel from the mark region on the bearing substrate to obtain the flexible display panel.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: Various types of edge seals for protecting electro-optic displays against environmental contaminants are described. In one type of seal, the electro-optic layer is sandwiched between a backplane and a protective sheet and a sealing material extends between the backplane and the protective sheet. In other seals, the protective sheet is secured to the backplane or to a second protective sheet adjacent the backplane. The electro-optic layer can also be sealed between two layers of adhesive or between one layer of adhesive and the backplane. Other seals make use of flexible tapes extending around the periphery of the display.

Abstract: A convex lens has surfaces including a flat surface and a projecting surface, and an anti-reflection structure configured to cover the projecting surface are included. The anti-reflection structure includes a first anti-reflection structure on the first end side, which is one of two end points of the line segment located nearer to the orthogonal projection of the apex than to the center point thereof, and a second anti-reflection structure on a second end side, which is one of the two end points of the line segment located nearer to the center point than to the orthogonal projection of the apex. A light transmittance of the second anti-reflection structure is greater than a light transmittance of the first anti-reflection structure.

Abstract: Provided are unit pixels for image sensors and pixel arrays including the same. The unit pixels include a first pixel including first and second photo diodes which are adjacent to each other, and a first deep trench isolation (DTI) fully surrounding sides of the first and second photo diodes and electrically separating the first pixel from other pixels adjacent to the first pixel. The first pixel includes a second DTI positioned between the first photo diode and the second photo diode and having one side formed to be spaced apart from the first DTI. The first pixel also includes a color filter positioned on the first and second photo diodes and fully overlapping the first and second photo diodes. The first pixel further includes a floating diffusion node electrically connected with the first and second photo diodes. The first and second photo diodes share one floating diffusion node.

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image sensor, the grid has a top surface, and the light-tight layer is disposed on the top surface of the grid. Due to the light-tight layer on the grid, an incident light entering into the grid can be blocked by the light-tight layer, so that the crosstalk effect is reduced significantly. Further, a method for manufacturing the image sensor also provides herein.

Abstract: In a circuit device controlling an operating point of each of two or more series-connected photovoltaic cells or other power supply cells in a module, the output voltage of the module can be boosted without reducing the generated electric power. The operating point control circuit device includes capacitors connected in parallel to the respective series-connected cells, switching elements connected in parallel to the respective series-connected cells through an inductor, an additional capacitor connected in series to the capacitor row, and an additional switching element connected in series to the switching element row. The switching elements are controlled to shut off electrical conduction between the corresponding terminals connected thereto in the same predetermined cycle and in mutually different periods so as to always establish a condition that one switching element is in the non-conductive state and the others are is in the conductive state.

Abstract: A method of forming an optoelectronic device and a silicon device on a single chip. The method may include; forming a stack of layers on a substrate in a first and second region, the stack of layers include a semiconductor layer, a first insulator layer, a waveguide, a second insulator layer, and a device base layer; forming the device on the device base layer in the second region; forming a device insulator layer on the device and on the device base layer in the second region; and forming the optoelectronic device in the first region, the optoelectronic device has a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is on the semiconductor layer, the active region is on the bottom cladding layer, and the top cladding layer is on the active region.

Abstract: A method for producing a semiconductor device includes preparing a wafer having plural portions and having an insulator having plural openings thereon, forming an embedding member in each of the plural openings and on the insulator, removing at least a part of the embedding member, and planarizing the embedding member. The plural portions have a first portion and a second portion and each of the first portion and the second portion has a first region and a second region. The density of the openings in the first region is higher than that in the second region. The process of removing at least a part of the embedding member includes removing the embedding member positioned in the second region of the first portion, and removing the embedding member positioned in the second region of the second portion. A first removal amount and a second removal amount in the processes are different.

Abstract: An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

Abstract: An optical electrical module includes a first substrate, a second substrate, a bearing portion and at least one optical electrical element. The second substrate is combined with the first substrate and has a reflective surface facing the first substrate. The bearing portion is disposed between the first substrate and the second substrate to limit at least one light guide element. The optical electrical element is disposed on a surface of the first substrate facing the reflective surface and faces the reflective surface. The optical electrical element is configured for providing or receiving light signals. The reflective surface and the light guide element are disposed on an optical path of the light signals.

Abstract: Provided is a method of manufacturing an imaging apparatus. The imaging apparatus is formed on a substrate and includes a pixel region and a peripheral circuit region that is arranged on a periphery of the pixel region. The method includes: forming an insulating layer in the pixel region and the peripheral circuit region; etching the insulating layer formed in the pixel region in a state in which the peripheral circuit region is protected; planarizing a surface of the insulating layer; and forming a waveguide in the pixel region. After the forming an insulating layer and before the etching the insulating layer, an average value of heights of a top surface of the insulating layer in the pixel region is larger than an average value of heights of a top surface of the insulating layer in the peripheral circuit region.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a curved lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the curved lower surface of the dielectric grid opening. A method for manufacturing the BSI image sensor is also provided.

Abstract: A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.

Abstract: Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other. In each of the plurality of pixel regions of the substrate, a photoelectric conversion region is provided. A gate electrode is provided on the photoelectric conversion region and a negative fixed charge layer covering the second surface of the substrate and at least a portion of a sidewall of the deep trench is also provided. The image sensors further include a shallow device isolation layer on the first surface of the substrate.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.

Abstract: An optical module includes: a first substrate configured to include an optical waveguide, and a first concave section provided over an end surface side of the optical waveguide; a resin configured to be disposed in the first concave section; an optical component configured to be disposed over the resin; and a second substrate configured to be jointed onto the first substrate, and to include a second concave section corresponding to the end surface in a surface facing the first concave section, the optical component being disposed between the resin and the second concave section.

Abstract: A film-forming composition including a triazine ring-containing hyperbranched polymer with a repeating unit structure indicated by formula (1), and inorganic micro particles is provided. This enables the provision of a film-forming composition capable of hybridizing without reducing dispersion of the inorganic micro particles in a dispersion fluid, capable of depositing a coating film with a high refractive index, and suitable for electronic device film formation. In the formula, R and R? are mutually independent and indicate a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, or an aralkyl group, and Ar indicates a divalent organic group including either an aromatic ring or a heterocyclic ring, or both.

Abstract: There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.

Abstract: A solid-state image pickup device has an image pickup pixel including a first photoelectric conversion portion and a first transistor and a focus detection pixel including a second photoelectric conversion portion, a second transistor, and a light shielding portion, in which a reflection preventing portion is provided on the underface side of the light shielding portion.

Abstract: A semiconductor device includes a thermal conductor formed on and thermally connected to the seal ring. The thermal conductor is spatially spaced from the electrically conductive pad. The thermal conductor is exposed of the substrate and can be regarded as an extension of the thermal path of the seal ring, such that the heat from the seal ring is dissipated efficiently.

Abstract: To provide an image capturing element and an image capturing apparatus in which an image capturing optical system can be thinned without degrading image capturing properties. An image capturing element according to an embodiment of the present technology includes an on-chip lens, a low refractive index layer and an infrared absorption layer. The on-chip lens is composed of a high refractive index material. The low refractive index layer is formed flatly on the on-chip lens and is composed of a low refractive index material. The infrared absorption layer is laminated above the low refractive index layer and is composed of an infrared absorption material.

Abstract: A semiconductor device includes a first substrate, a second substrate, a plurality of through vias (TVs), and a plurality of conductive caps. The first substrate has at least one electrical component disposed thereon. The second substrate is stacked on the first substrate. The TVs extend through the second substrate to be electrically connected to the at least one electrical component of the first substrate. The conductive caps respectively cover the TVs, and the conductive caps are electrically isolated from each other.

Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.

Abstract: Solid-state imaging devices (1) including: a substrate (12); a photoelectric conversion section (50) comprising a chalcopyrite material formed over the substrate in a light incident side; a transparent electrode (57) in the light incident side of the photoelectric conversion section; and an electron barrier layer (58) formed between the photoelectric conversion section and the transparent electrode; and methods of manufacturing the solid-state imaging devices and electronic apparatuses including the solid-state imaging devices.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. The image sensor die may include light shielding structures for preventing reference photodiodes in the image sensor die from receiving light and in-pixel grid structures for preventing cross-talk between adjacent pixels. The light shielding structure may receive a desired biasing voltage through a corresponding TOV, an integral plug structure, and/or a connection that makes contact directly with a polysilicon gate. The in-pixel grid may have a peripheral contact that receives the desired biasing voltage through a light shield, a conductive strap, a TOV, and/or an aluminum pad.