Abstract: A semiconductor device includes a first substrate, a second substrate, a plurality of through vias (TVs), and a plurality of conductive caps. The first substrate has at least one electrical component disposed thereon. The second substrate is stacked on the first substrate. The TVs extend through the second substrate to be electrically connected to the at least one electrical component of the first substrate. The conductive caps respectively cover the TVs, and the conductive caps are electrically isolated from each other.

Abstract: A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.

Abstract: Solid-state imaging devices (1) including: a substrate (12); a photoelectric conversion section (50) comprising a chalcopyrite material formed over the substrate in a light incident side; a transparent electrode (57) in the light incident side of the photoelectric conversion section; and an electron barrier layer (58) formed between the photoelectric conversion section and the transparent electrode; and methods of manufacturing the solid-state imaging devices and electronic apparatuses including the solid-state imaging devices.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. The image sensor die may include light shielding structures for preventing reference photodiodes in the image sensor die from receiving light and in-pixel grid structures for preventing cross-talk between adjacent pixels. The light shielding structure may receive a desired biasing voltage through a corresponding TOV, an integral plug structure, and/or a connection that makes contact directly with a polysilicon gate. The in-pixel grid may have a peripheral contact that receives the desired biasing voltage through a light shield, a conductive strap, a TOV, and/or an aluminum pad.

Abstract: A photoelectric conversion device of an image sensor includes a first transparent electrode layer, an active layer, and a second transparent electrode layer, which are sequentially stacked. A light having a wavelength of about 440 nm-480 nm is absorbed within a depth of about ? of an entire thickness of the active layer from both the top and bottom surfaces of the active layer.

Abstract: A double-lens structure and a method for fabricating the same are provided. The double-lens structure includes a first lens structure formed of a color filter layer having a first refractive index and a second lens structure formed of a micro-lens material layer having a second refractive index and disposed on the first lens structure. The first refractive index of the color filter layer is different from the second refractive index of the micro-lens material layer. An incident light enters the second lens structure and then passes through the first lens structure. Further, a method for fabricating the double-lens structure is also provided.

Abstract: A housing includes a lead frame formed from electrically conductive material having first and second sides, a contact section contacting an electronic component at the first side, and at least one receiving section arranging the electronic component at the first side, wherein the contact and receiving sections are separated and the contact section is formed thinner than the receiving section in a direction perpendicular, a molding material having an opening, the receiving and contact regions exposed in the opening, and into which the leadframe is embedded such that part of the molding material is formed between the contact and receiving sections and the second side is covered by the molding material in the contact section, and the second side is free of molding material in the receiving section, wherein the molding material at the second side has at least one opening filled with the electrically insulating material.

Abstract: A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device. In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.

Abstract: A photodetector according to an embodiment includes: a semiconductor substrate with a first and second faces; a groove formed on the second face; pixels disposed to the semiconductor substrate, each pixel including: light detection cells disposed on the first face, each light detection cell having a first and second terminals, each light detection cell being surrounded by the groove; a first wiring line disposed on the first face to connect to the first terminal of each of the detection cells; a first opening formed in the second face and penetrating the semiconductor substrate; a first insulating film covering the second face, a side face of the first opening, and a side face and a bottom of the groove; a second opening formed in the first insulating film; a first and second electrodes disposed in the first and second openings respectively; and a light blocking material filled to the groove.

Abstract: A photonics-optimized multi-processor system may include a plurality of processor chips, each of the processor chips comprising at least one input/output (I/O) component. The multi-processor system may also include first and second photonic components. The at least one I/O component of at least one of the processor chips may be configured to directly drive the first photonic component and receive a signal from the second photonic component. A total latency from any one of the processor chips to data at any global memory location may not be dominated by a round trip speed-of-light propagation delay. A number of the processor chips may be at least 10,000, and the processor chips may be packaged into a total volume of no more than 8 m3. A density of the processor chips may be greater than 1,000 chips per cubic meter.

Abstract: The light receiving/emitting device uses an integrated light receiving/emitting element wherein a light receiving element and a light emitting element are provided on one main surface of a substrate. The substrate comprises a first-conductivity-type semiconductor. At least one electrode layer is placed in an area corresponding to at least the light receiving element and the light emitting element on the other main surface of the substrate. The light receiving element comprises: a first second-conductivity-type semiconductor layer formed on the one main surface of the substrate; a first anode electrode formed on the top surface of the first second-conductivity-type semiconductor layer; and a first cathode electrode formed on the top surface of the one main surface of the substrate. The electrode layer, the first anode electrode and the first cathode electrode have the same electric potential.

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.

Abstract: A method of manufacturing a semiconductor apparatus, comprising forming a structure including an insulating layer on a substrate, and an electrode on the structure, forming an insulating first film covering the electrode and the structure, forming an opening in a projection, of the first film, formed by a step between upper faces of the electrode and the structure, to expose part of the upper face of the electrode as a first portion, forming a second film covering the first film and the first portion, forming a protective film in the opening by processing the second film, the protective film covering a side face defining the opening and the first portion and being not formed on an upper face of the projection, and forming a third film on the first film and the protective film by spin coating.

Abstract: Provided is a dye-sensitized solar cell which includes a working electrode having a porous titanium oxide layer on a conductive substrate, and a photosensitizing dye supported on the porous titanium oxide layer, in which the porous titanium oxide layer contains an anatase crystal-type TiO2 and a rutile crystal-type TiO2, the porous titanium oxide layer includes a plurality of layers, an outermost layer disposed at a position farthest from the conductive substrate contains the rutile crystal-type TiO2, at least one intermediate layer provided between the outermost layer and the conductive substrate contains the anatase crystal-type TiO2, a first intermediate layer disposed at a position closest to the outermost layer contains the anatase crystal-type TiO2 and the rutile crystal-type TiO2, and a content of the rutile crystal-type TiO2 in the outermost layer is greater than that of the rutile crystal-type TiO2 in the intermediate layer.

Abstract: An IC may include a substrate and a layer, and an array of GMAPDs in the layer. The layer may have trenches extending between adjacent GMAPDs. The IC may include an optically reflective material within the trenches. The optically reflective material may also be electrically conductive. For example, the optically reflective material may comprise a metal. Also, the trenches may be arranged in a honeycomb pattern.

Abstract: The image sensor includes lens-type color filters having a uniform shape for a plurality of pixels. The image sensor includes a plurality of pixels formed in a substrate, a plurality of color filter housings formed over outer boundaries of the respective pixels, and a plurality of color filters filled in spaces defined by the respective color filter housings, wherein the clock filter housings surround edges of the respective color filters with a given curvature.

Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.

Abstract: An image sensor includes a photodiode proximate to a front side of semiconductor material to accumulate image charge. A metal layer reflector structure is disposed in a dielectric layer proximate to the front side of the semiconductor material. A contact reflecting ring structure is disposed in the dielectric layer between the metal layer reflector structure and a contact etch stop layer disposed over the front side of the semiconductor material. The contact reflecting ring structure defines a portion of a light guide in the dielectric layer such that light that is directed through a back side of the semiconductor material, through the photodiode, and reflected from the metal layer reflector structure back through the photodiode is confined to remain within an interior of the contact reflecting ring structure when passing through the dielectric layer between the photodiode and the metal layer reflector structure.

Abstract: An imaging apparatus that forms an image of a light beam transmitted through an imaging lens on an imaging element includes a laminated material that is provided on the imaging element, the light beam being transmitted through the laminated material, the laminated material being provided at a position at which an end portion of an upper surface of the laminated material allows an outermost light beam out of light beams to be transmitted therethrough, the light beams entering a pixel in an outer end portion of the imaging element in an effective pixel area, the position having a width Hopt.

Abstract: A light emitting device, having: a first light emitting element and a second light emitting element; and a resin package equipped with an opening having a reflective wall that widens toward the upper face, the opening comprises at least first and second curved parts having different radiuses at the resin package upper face, and the radius of the first curved part disposed near the first light emitting element is greater than the radius of the second curved part disposed near the second light emitting element.

Abstract: A semiconductor device includes a first chip, a dielectric layer over the first chip, and a second chip over the dielectric layer. A conductive layer is embedded in the dielectric layer and is electrically coupled to the first chip and the second chip. The second chip includes an optical component. The first chip and the second chip are arranged on opposite sides of the dielectric layer in a thickness direction of the dielectric layer.

Abstract: This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 ?m.

Abstract: An LED device includes a substrate, a number (N) of flip-chip LED die(s), an electrical conductive structure and a lens structure. The substrate has upper and lower surfaces and is formed with multiple through holes. A ratio of LED die(s) surface area to an area of the upper surface of the substrate ranges from 22.7% to 76.2%. The electrical conductive structure includes a number (N) of upper bonding pad assembly (assemblies), a number (N+1) of lower bonding pads and a number (2N) of interconnectors. Each upper bonding pad assembly includes two upper bonding pads electrically connected to the LED die(s). The interconnectors are disposed in the through holes and interconnect the upper and lower bonding pads. The lens structure covers the LED die(s).

Abstract: An apparatus for measuring electrical characteristics of solar panels (photovoltaic modules) wherein the apparatus measures current versus voltage (“I-V”) relationships for both illuminated (“light I-V”) and/or non-illuminated (“dark I-V”) conditions; optionally provides single, dual, or four-quadrant source/sink capability; and measures one or more devices under test (DUTs). The apparatus comprises one or more source measurement units (SMUs), wherein each SMU is connected to one DUT, and optionally includes a positive high-voltage programmable power supply and/or a negative high-voltage programmable power supply. Additionally, the apparatus includes a controller which controls the functions of the SMUs, the high-voltage supplies, and other components of the apparatus, wherein the controller communicates with the SMUs over a signal bus.

Abstract: To obtain image data including a parallax in the vertical direction and image data including a parallax in the horizontal direction, it has been necessary to prepare imaging devices individually at the positions corresponding to the respective viewpoints. Hence, provided is an image processing element including: photoelectric converting elements that are arranged two-dimensionally and convert incident light to electric signals, respectively; and aperture masks provided on the photoelectric converting elements, wherein photoelectric converting element groups each including n photoelectric converting elements are arranged cyclically where n is an integer equal to or larger than 4, and apertures in the aperture masks are positioned lopsidedly to be axisymmetric to each other with respect to each of two orthogonal axes defined on the two-dimensional arrangement of each photoelectric converting element group.

Abstract: A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.

Abstract: Disclosed herein is a solid-state image pickup element, including: a photoelectric conversion region; a transistor; an isolation region of a first conductivity type configured to isolate the photoelectric conversion region and the transistor from each other; a well region of the first conductivity type having the photoelectric conversion region, the transistor, and the isolation region of the first conductivity type formed therein; a contact portion configured to supply an electric potential used to fix the well region to a given electric potential; and an impurity region of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region of the first conductivity type in the isolation region of the first conductivity type between the contact portion and the photoelectric conversion region, and having a sufficiently higher impurity concentration than that of the isolation region of the first conductivity type.

Abstract: A transparent conductive film includes a transparent substrate and a polymer layer formed on the transparent substrate, a surface of the polymer layer is patterned to define a meshed trench, the meshed trench is filled with a conductive material to form a sending area, a periphery of the sensing area is printed with a lead, the lead is electrically connected to the conductive material in the meshed trench. Besides, a method of manufacturing the transparent conductive film is provided. In the transparent conductive film and the method, the trench is filled with a conductive material to form a sending area, and the lead is formed by printing and electrically connected to the conductive material, the yield of the lead of the transparent conductive film is relatively high.

Abstract: An image sensor device includes a substrate having an active array region and a peripheral circuit region, a plurality of light-sensing elements disposed within the active array region, a first dielectric layer on the substrate, and a second dielectric layer on the first dielectric layer. A recess region is provided in the second dielectric layer to reveal a top surface of the first dielectric layer within the active array region. An angle between a sidewall of the second dielectric layer that defines the perimeter of the recess region and the top surface of the first dielectric layer is less than 90 degrees.

Abstract: A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer.

Abstract: A terahertz electromagnetic wave generator according to the present disclosure includes: a substrate; a thermoelectric material layer which is supported by the substrate and which has a surface; and a pulsed laser light source system which locally heats the thermoelectric material layer with an edge of the surface of the thermoelectric material layer irradiated with pulsed light, thereby generating a terahertz electromagnetic wave from the thermoelectric material layer.

Abstract: A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

Abstract: An imaging part of an electronic visualized catheter including, an object lens system, and a solid state imaging element which is positioned to receive light output from the object lens system and which photoelectrically converts the light output from the object lens system into an electric signal, wherein an output lens face of the object lens system is planar, and the output lens face is joined to a light receiving surface of the solid state imaging element.

Abstract: A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

Abstract: According to example embodiments, a transmissive electrode may include a light transmission layer. The light transmission layer may include a metal and a metal oxide that is included in a smaller amount than the metal. According to example embodiments, an organic photoelectric device, as well as an image sensor, may include the transmissive electrode.

Abstract: A solid-state imaging apparatus includes a semiconductor substrate in which a charge transfer section configured to transfer a charge generated in a photoelectric conversion section is formed. The semiconductor substrate includes a surface that is formed in a convex shape in an area in which the charge transfer section is formed.

Abstract: The present disclosure relates to an integrated chip having coupling elements that couple electromagnetic radiation having a frequency outside of the visible spectrum between a silicon substrate and a dielectric waveguide overlying the silicon substrate. In some embodiments, the integrated chip has a dielectric waveguide disposed within an inter-level dielectric (ILD) material overlying a semiconductor substrate. A first coupling element couples a first electrical signal generated by a driver circuit disposed within the semiconductor substrate to a first end of the dielectric waveguide as electromagnetic radiation having a frequency outside of the visible spectrum. A second coupling element couples the electromagnetic radiation from a second end of the dielectric waveguide to a second electrical signal.

Abstract: An image sensor package, and method of making same, that includes a printed circuit board having a first substrate with an aperture extending therethrough, one or more circuit layers, and a plurality of first contact pads electrically coupled to the one or more circuit layers. A sensor chip mounted to the printed circuit board and disposed at least partially in the aperture. The sensor chip includes a second substrate, a plurality of photo detectors formed on or in the second substrate, and a plurality of second contact pads formed at the surface of the second substrate which are electrically coupled to the photo detectors. Electrical connectors each electrically connect one of the first contact pads and one of the second contact pads. A lens module is mounted to the printed circuit board and has one or more lenses disposed for focusing light onto the photo detectors.

Abstract: A solid-state imaging device including: (a) a semiconductor layer with oppositely facing first and second sides; (b) first and second photoelectric converters between the first and second sides of the semiconductor layer, the first photoelectric converter being between the first side and the second photoelectric converter; and (c) a longitudinal transistor with a gate electrode embedded in the semiconductor layer at the second side, the gate electrode extending to the first photoelectric converter. The first photoelectric converter and the longitudinal transistor overlap.

Abstract: Photonic structures and methods of formation are disclosed in which a photo detector interface having crystalline misfit dislocations is displaced with respect to a waveguide core to reduce effects of dark current on a detected optical signal.

Abstract: An electronic device includes a board including an electronic component, a plurality of optical interface units that include an optical element which input or output light and that are provided on the board, and a plurality of individual positioning units that position a plurality of respective optical waveguides which are separate from each other at least at tip portions on a side of the optical interface units and which are optically aligned with the optical element with respect to the optical interface units independently from each other.

Abstract: A method for forming image sensors includes providing a substrate and forming a plurality of photo diode regions, each of the photo diode regions being spatially disposed on the substrate. The method also includes forming an interlayer dielectric layer overlying the plurality of photo diode regions, forming a shielding layer formed overlying the interlayer dielectric layer, and applying a silicon dioxide bearing material overlying the shielding layer. The method further includes etching portions of the silicon dioxide bearing material to form a plurality of first lens structures, and continuing to form each of the plurality of first lens structures to provide a plurality of finished lens structures.

Abstract: An organic light emitting diode display including a pixel that includes a light-emitting device and a first thin film transistor connected to the light-emitting device; and a sensor that includes a light sensing element, wherein the light sensing element includes a gate electrode; an active layer on the gate electrode; a filter layer on the active layer; and source and drain electrodes on the active layer, the source and drain electrodes being connected to the active layer, the light sensing element and the first thin film transistor are formed on a same substrate, and one of the gate electrode and the active layer of the light sensing element and a gate electrode of the first thin film transistor are aligned on a same layer.

Abstract: An image pickup unit includes: a plurality of pixels each including a photoelectric conversion device and a field-effect transistor. Each of the pixels includes a light-blocking layer in a peripheral region of the photoelectric conversion device, and the light-blocking layer is maintained to a predetermined electric potential.

Abstract: An embedded image sensor package includes a core layer having a cavity therein, an image sensor chip disposed in the cavity and having a top surface on which a light receiver and connection members are disposed, a first insulation layer disposed on a top surface of the core layer and the top surface of the image sensor chip and having an opening that defines a light receiving area including the light receiver, a protection layer disposed between the light receiver and the first insulation layer to surround the light receiver, and a light transmission layer disposed on the light receiver. The protection layer is disposed along edges of the light receiving area. Related methods are also provided.

Abstract: An imaging system may include an image sensor die stacked on top of a digital signal processor (DSP) die. The image sensor die may be a backside illuminated image sensor die. Through-oxide vias (TOVs) may be formed in the image sensor die and may extend at least partially into in the DSP die to facilitate communications between the image sensor die and the DSP die. Color filter housing structures may be formed over active image sensor pixels on the image sensor die. In-pixel grid structures may be integrated with the color filter housing structures to help reduce crosstalk. Light shielding structures may be formed over reference image sensor pixels on the image sensor die. The TOVs, the in-pixel grid structures, and the light shielding structures may be formed simultaneously. The formation of the color filter housing structures may also be integrated the formation of the TOVs.

Abstract: An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The packaged chip includes semiconductor die and its package based on the ball-grid array or chip-scale-package. The O-E board includes the optoelectronics components and multiple electrical contacts on both sides of the O-E substrate. The waveguide board includes the electrical conductor transferring the signal from O-E board to PCB and the flex optical waveguide easily stackable onto the PCB to guide optical signal from one chip-to-other chip. Alternatively, the electrode can be directly connected to the PCB instead of including in the waveguide board. The chip-to-chip interconnections system is pin-free and compatible with the PCB.

Abstract: An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

Abstract: A photoconductive switch having a wide bandgap semiconductor material substrate between opposing electrodes, with one of the electrodes having an aperture or apertures at an electrode-substrate interface for transversely directing radiation therethrough from a radiation source into a triple junction region of the substrate, so as to geometrically constrain the conductivity path to within the triple junction region.