Abstract: A heterocontact solar cell in a layer structure. The solar cell includes an absorber made of a p-type and/or n-type doped crystalline semiconductor material. The cell also includes an emitter made of an amorphous semiconductor material that is oppositely doped relative to the absorber. Also included is an intrinsic interlayer made of an amorphous semiconductor material between the absorber and the emitter. The cell includes a cover layer on the side of the absorber facing a light. A first ohmic contact structure including a minimized shading surface on the side of the absorber facing the light and a second ohmic contact structure on a side of the absorber facing away from the light are also included.

Abstract: Disclosed herein is a micromirror array device that comprises an array of reflective deflectable mirror plates each being associated with one single addressing electrode to be deflected to an ON state angle. A light transmissive electrode is disposed proximate to the mirror plates for deflecting the mirror plates to a non-zero OFF angle. The mirror plates are arranged in the array with a center-to-centre distance of 10.17 microns or less.

Abstract: There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 ?m.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is larger in band gap than the semiconductor substrate and that contains an element causing a conductivity identical to or different from a conductivity of the semiconductor substrate is provided on a light-receiving surface side of the semiconductor substrate, and a diffusion layer is formed on a surface of the semiconductor substrate.

Abstract: The invention involves the integration of curved micro-mirrors over a photodiode active area (collection area) in a CMOS image sensor (CIS) process. The curved micro-mirrors reflect light that has passed through the collection area back into the photo diode. The curved micro-mirrors are best implemented in a backside illuminated device (BSI).

Abstract: A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition.

Abstract: A photo-coupler semiconductor device includes first and second planar lead frames each having a main portion and a distal portion, a light emitting element and a light receiving element respectively mounted on upper surfaces of the distal portions of the first and second lead frames, a light-transmitting resin member which covers the light emitting element and the light receiving element, and supports the distal portions of the first and second lead frames in spaced opposed relation with the light emitting element and the light receiving element being mounted on the upper surfaces of the distal portions so that the main portions of the first and second lead frames are located in coplanar relation, and a opaque resin member which covers the light-transmitting resin member, and supports the main portions of the first and second lead frames. The light-transmitting resin member and the opaque resin member are each composed of an epoxy resin as a base resin.

Abstract: A floating body germanium (Ge) phototransistor with a photo absorption threshold bias region, and an associated fabrication process are presented. The method includes: providing a p-doped Silicon (Si) substrate; selectively forming an insulator layer overlying a first surface of the Si substrate; forming an epitaxial Ge layer overlying the insulator layer; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers; forming source/drain (S/D) regions in the Ge layer; and, forming a photo absorption threshold bias region in the Ge layer, adjacent the channel region. In one aspect, the second S/D region has a length, longer than the first S/D length. The photo absorption threshold bias region underlies the second S/D region. Alternately, the second S/D region is separated from the channel by an offset, and the photo absorption threshold bias region is the offset in the Ge layer, after a light p-doping.

Abstract: A device is disclosed for reducing the risk of primary and secondary electrostatic discharges occurring in particular in the solar generators of spacecraft. A solar energy concentrator device for spacecraft includes a reflector for reflecting solar radiation onto a photovoltaic cell for converting solar energy into electrical energy and a heat transfer arrangement for transporting to a cold area heat energy stored by the cell following reception of solar radiation. One particular application of the device is to solar panels for satellites.

Abstract: A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6), a light-absorbing layer (3) containing light-absorbing particles carrying dye and an electrolyte layer (5), characterized in that the light-absorbing layer (3) containing light-scattering particles (4) different in size from the light-absorbing particles. In such a dye-sensitized solar cell according to the present invention, the energy of light, which passes through a light-absorbing layer in a conventional cell structure, can be strongly absorbed by the dye in the light-absorbing layer of the present invention. This will increase the conversion efficiency and output current of the dye-sensitized solar cell.

Abstract: A rear-illuminated-type photodiode array has (a) a first-electroconductive-type semiconductor substrate, (b) a first-electroconductive-type electrode that is placed at the rear side of the semiconductor substrate and has openings arranged one- or two-dimensionally, (c) an antireflective coating provided at each of the openings of the first-electroconductive-type electrode, (d) a first-electroconductive-type absorption layer formed at the front-face side of the substrate, (e) a leakage-lightwave-absorbing layer that is provided on the absorption layer and has an absorption edge wavelength longer than that of the absorption layer, (f) a plurality of second-electroconductive-type regions that are formed so as to penetrate through the leakage-lightwave-absorbing layer from the top surface and extend into the absorption layer to a certain extent and are arranged one- or two-dimensionally at the positions coinciding with those of the antireflective coatings at the opposite side, and (g) a second-electroconductive-t

Abstract: An image sensing device is disclosed having a die formed with an array of photosensing sites and a structure of optical material having infrared absorbing characteristics formed over the photosensing sites. An embodiment is disclosed in which the structure of optical material having infrared absorbing characteristics is formed as an array of microlenses for directing visible image light onto the photosensing sites and at the same time filtering out infrared wavelengths that interfere with image capture. Alternatively, the structure may be designed to filter out other ranges of wavelengths outside of the visible spectrum.

Abstract: It is an object of the present invention to apply a technique for removing the adverse effect of a substrate shrinkage due to a heat treatment, and further forming a fine and high-quality insulating film, and a semiconductor device that can realize high-performance and high-reliability by using the same, to a transistor formed by laminating a semiconductor film or an insulating film over a glass substrate. A heat treatment that is necessary in a step of forming a thin film element by laminating a semiconductor film or an insulating film over a glass substrate is performed without thermally-damaging the substrate. For the purpose, a light-absorbing layer that can absorb pulsed light over a particular portion of the substrate in which the thin film element is formed is locally formed, and the heat treatment is performed.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: In a light detector that is a semiconductor integrated circuit, a wiring structure is disposed on a semiconductor substrate along a periphery of a rectangular region that corresponds to a light receiver, and an interlayer insulating film composed of an SOG film is layered over the wiring structure. In this structure, the interlayer insulating film is thicker at a corner than at a center part of the light receiver. In order to increase efficiency of the incidence of light on the light receiver, the planar shape of the open part is formed so that the corners of the rectangle that surrounds the wiring structure are removed when the interlayer insulating film is etched and the open part is formed (i.e., yielding an octagonal shape).

Abstract: A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode (2) formed on a surface of a transparent substrate (1) and a counter electrode (6), a light-absorbing layer (3) containing light-absorbing particles carrying dye and an electrolyte layer (5), characterized in that the light-absorbing layer (3) containing light-scattering particles (4) different in size from the light-absorbing particles. In such a dye-sensitized solar cell according to the present invention, the energy of light, which passes through a light-absorbing layer in a conventional cell structure, can be strongly absorbed by the dye in the light-absorbing layer of the present invention. This will increase the conversion efficiency and output current of the dye-sensitized solar cell.

Abstract: A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to top in this order. The layers are all made of aluminum-gallium-indium-nitride (AlGaInN) compound semiconductors. By varying the composition of aluminum, gallium, and indium, the layers, on one hand, can achieve the desired band gaps so that the photo detector is highly responsive to ultraviolet lights having specific wavelengths. On the other hand, the layers have compatible lattice constants so that problems associated with excessive stress are avoided and high-quality epitaxial structure is obtained. The structure further contains a positive electrode, a light penetration contact layer, and an anti-reflective coating layer on top of the p-type contact layer, and a negative electrode on the n-type contact layer.

Abstract: A photodetector includes a charge carrier collector and a charge carrier concentrator that redirects onto the collector charge carriers that are not initially headed towards the collector.

Abstract: A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.

Abstract: A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.

Abstract: An imager with pixels having a resonant-cavity photodiode. The resonant cavity photodiode increases absorption of light having long wavelengths. A trench is formed for the photodiode and reflective film is grown on the bottom of the trench. The reflective film reflects light that is not initially absorbed back to the active region of the photodiode.

Abstract: A light transmissive cover for a device comprising: a cover member of light transmissive material; and a junction member joined to the cover member, the junction member being a member used to be joined to the body of the device and having a light interrupting film on the inner surface thereof. A device provided with a light transmissive cover, the device being provided with a cover member of light transmissive material joined to the body of device via a junction member so as to cover at least a part of the device, and having a light interrupting film on the inner surface of the junction member is also disclosed. In addition, methods for manufacturing them disclosed.

Abstract: Disclosed herein is a micromirror array device package having a light blocking area for reducing unexpected light scattering from the surfaces of the posts.

Abstract: A photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion element provided between the first electrode and the second electrode. The photoelectric conversion element includes a polymer. The polymer includes at least one light absorber which absorbs light and generates at least one kind of carrier. An end part of the polymer combines with a surface, which faces the second electrode, of the first electrode.

Abstract: An image pickup element comprising a plurality of pixels, each including a photoelectric conversion section and a wavelength selection section for transmitting to the photoelectric conversion section light of a predetermined wavelength range, wherein the wavelength selection section has a vertex, and wherein, for a pixel located in the peripheral portion of the image pickup element, the vertex of the wavelength selection section is located closer to the center of the image pickup element than to the center of the photoelectric conversion section.

Abstract: A photovoltaic module comprises electrically interconnected and mutually spaced photovoltaic cells that are encapsulated by a light-transmitting encapsulant between a light-transparent front cover and a back cover, with the back cover sheet being an ionomer/nylon alloy embossed with V-shaped grooves running in at least two directions and coated with a light reflecting medium so as to provide light-reflecting facets that are aligned with the spaces between adjacent cells and oriented so as to reflect light falling in those spaces back toward said transparent front cover for further internal reflection onto the solar cells, whereby substantially all of the reflected light will be internally reflected from said cover sheet back to the photovoltaic cells, thereby increasing the current output of the module. The internal reflector improves power output by as much as 67%.

Abstract: A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

Abstract: Disclosed are an image sensor package and its manufacturing method. As an example, an infrared ray protection glass is positioned directly on an image sensing region of an image sensor die. An electrically conductive wire and so forth located outside the image sensing region are encapsulated. At this time, one surface of the infrared ray protection glass is exposed outwardly. A mount holder to which a barrel with lenses is coupled is adhered on a surface of the encapsulant outside the infrared ray protection glass. The mount holder has a similar width to that of the image sensor die. Accordingly, the overall width of the image sensor package can become reduced, and the electrically conductive wire is protected against oxidization because it is surrounded by the encapsulant.

Abstract: A solar cell involving a silicon wafer having a basic doping, a light-receiving front side and a backside, which is provided with an interdigital semiconductor pattern, which interdigital semiconductor pattern has a first pattern of at least one first diffusion zone having a first doping and a second pattern of at least one second diffusion zone, separated from the first diffusion zone(s) and having a second doping that differs from the first doping, wherein each second diffusion zone is arranged along the sides of at least one groove extending from the backside into the silicon wafer.

Abstract: Quantum-well sensors having an array of spatially separated quantum-well columns formed on a substrate. A grating can be formed increase the coupling efficiency.

Abstract: An attachment structure is used for attaching a solid-state imaging device to a light exit end face of a color-separating prism. When bonding the light exit end face on the color-separating prism side and the light entrance face on the solid-state imaging device side to each other, an adhesive is applied to a predetermined position between these faces outside a region through which a luminous flux incident on the imaging section of the solid-state imaging device passes.

Abstract: The organic photoelectric conversion element according to the invention has enhanced the light-absorbing property by incorporating two or more kinds of electron donating organic materials 4a and 4b in the photoelectric conversion region 14. With such measure, it has become possible to efficiently absorb the incident light and enhance the photoelectric conversion characteristic. In addition, a light-to-light conversion material 7 is incorporated in the photoelectric conversion region, too. With this measure, even the light of such a wavelength that an electron donating organic material cannot inherently absorb comes to be absorbed since the light-to-light conversion material 7 converts the wavelength, thus enabling the light to be utilized for carrier generation. Accordingly, an organic photoelectric conversion element with a high conversion efficiency can be obtained.

Abstract: An improved photoconductive semiconductor switch comprises multiple-line optical triggering of multiple, high-current parallel filaments between the switch electrodes. The switch can also have a multi-gap, interdigitated electrode for the generation of additional parallel filaments. Multi-line triggering can increase the switch lifetime at high currents by increasing the number of current filaments and reducing the current density at the contact electrodes in a controlled manner. Furthermore, the improved switch can mitigate the degradation of switching conditions with increased number of firings of the switch.

Abstract: A solar co-generator for producing both heat energy and electricity is disclosed. A solar concentrator directs sunlight into a container lined with solar cells and filled with a thermal transfer fluid. The fluid is transparent with respect to certain wavelengths of light that may be converted to electricity by the solar cell, but is opaque with respect to longer wavelengths, particular the infrared band. The infrared portion of the sunlight heats the thermal transfer fluid, which then transfer that heat through a storage facility using a heat exchange mechanism. The thermal transfer fluid increases the efficiency of photovoltaic generation by preventing heating of the solar cells due to infrared radiation. The thermal transfer fluid may be a mixture containing barium sulfate and a suspension of zinc sulfide phosphors. A fluorescing anti-reflective coating may be applied to the solar cells to further increase efficiency.

Abstract: An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.

Abstract: A solid-state imaging device of the present invention is provided with a plurality of photodiodes arranged in a one-dimensional or a two-dimensional arrangement, inorganic dielectric films that are made of a translucent inorganic substance, formed on the photodiode, and a hollow layer that is formed within the inorganic dielectric film and sandwiched between an inner lateral wall and an outer lateral wall formed with the inorganic dielectric film, wherein the hollow layer has a funnel shape whose aperture widens from an end portion near an upper portion of the photodiode with increasing distance from the photodiode. Light that is incident on a region above the photodiode area can be focused effectively onto the photodiode over a wide range.

Abstract: An image sensor for capturing an image includes a photosensitive area for receiving incident light; a substance placed covering a portion of the photosensitive area which substance includes a first index of refraction; and a plurality of electrodes positioned adjacent the substance having a dielectric placed between a portion of the electrodes, which dielectric includes a second index of refraction lower than the first index of refraction.

Abstract: An image pickup apparatus comprises a plurality of photoelectric conversion areas, and a light adjustment area including a first transmission portion for transmitting light which is provided in association with a first photoelectric conversion area included in the plurality of photoelectic conversion areas and a second transmission portion for transmitting light which is provided in association with a second photoelectric conversion area included in the plurality of photoelectric conversion areas. The light adjustment area is configured to cause a part of light incident on the second transmission portion to be incident on the first transmission portion.

Abstract: A CMOS type of image sensor module for use in a mobile camera or a PC camera includes an image sensoring semiconductor chip encapsulated in a transparent block of polymeric material on a substrate having a circuit to which the ship is connected. The image sensoring semiconductor chip is disposed on an upper surface of the substrate as spaced vertically from a digital signal processing second semiconductor chip mounted on a lower surface of the substrate. The transparent polymeric encapsulation material constitutes a sealing resin unit. The digital signal processing second semiconductor chip may also be encapsulated by the sealing resin unit. The sealing transfer unit can be formed by injection and/or transfer molding. The forming of the sealing resin unit by a single molding process keeps production costs low.

Abstract: An optical element is provided that may be used for collecting optical radiation incident at large angles of incidence. The element may include a grating window formed of grating elements that may collect large incident angle radiation and reflect that radiation, e.g., under total internal reflection in a substantially normal direction. A lens or lens array may be used to collect the internally reflected radiation and focus that radiation to a detector. Example detectors include infrared detectors. The element may be formed to collect, reflect, and redirect optical radiation incident at angles above 45° as measured from a surface normal to a detector oriented substantially at normal incidence. The detected signal from the optical element may be used to control systems within an aircraft or other vehicle capable of flight.

Abstract: A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one of the charge transfer layers comprises a semiconductor acicular crystal layer comprising an aggregate of acicular crystals or a mixture of an acicular crystal and another crystal, and a method of producing the device are disclosed. Consequently, a photoelectric conversion device being capable of smoothly carrying out transfer of electrons and having high photoelectric conversion efficiency is provided.

Abstract: Method and system for converting solar energy into electrical energy utilizing serially coupled multijunction-type photovoltaic cells in conjunction with a form of spectral cooling. The latter cooling is carried out by removing ineffective solar energy components from impinging concentrated light, inter alia, through the utilization of dichroics or the conversion of ineffective solar energy components to effective energy components by means of luminescence, phosphorescence, or fluorescence. Ineffective solar energy components are described as those exhibiting wavelengths outside the bandgap energy defined wavelength and an associated wavelength defined band of useful photon energy.

Abstract: A lower cladding layer is laminated on a substrate and constituted of at least one layer. A light absorption layer is laminated on the lower cladding layer. An upper cladding layer is laminated above the light absorption layer and constituted of at least one layer. A light incident end surface is provided on at least one of the substrate and the lower cladding layer, and, when a light is made incident at a predetermined angle, enables the light to be absorbed in the light absorption layer and to be output as a current. An equivalent refractive index of the at least one of the substrate and the lower cladding layer is larger than that of the upper cladding layer. The predetermined angle is an angle enabling a light incident into the light absorption layer to be reflected at a lower surface of the upper cladding layer.

Abstract: A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.

Abstract: The optical information recording medium of the present invention includes an information layer provided on a substrate. The information layer includes: a recording layer with respect to which information can be recorded and reproduced through irradiation with a laser beam having a predetermined wavelength; a first protective layer that is located, with respect to the recording layer, on the side to which the laser beam is incident; and a second protective layer that is located, with respect to the recording layer, on the opposite side to the side to which the laser beam is incident. The refractive index n1 of the first protective layer and the refractive index n2 of the second protective layer at the predetermined wavelength of the laser beam that is used for recording and reproduction satisfy a relationship of n2<n1.

Abstract: There is provided an image pickup apparatus which has a plurality of photoelectric conversion regions and a plurality of reflectors disposed so as to lie around the photoelectric conversion regions when viewed from the light incident direction, and which is constructed such that each reflector reflects at least one part of the light from one of the photoelectric conversion regions towards one of the other photoelectric conversion regions adjacent to the one photoelectric conversion region.

Abstract: Provided are a SiGe vertical optical path and a method for selectively forming a SiGe optical path normal structure for IR photodetection. The method comprises: forming a Si substrate surface; forming a Si feature, normal with respect to the Si substrate surface, such as a trench, via, or pillar; and, selectively forming a SiGe optical path overlying the Si normal feature. In some aspects, the Si substrate surface is formed a first plane and the Si normal feature has walls (sidewalls), normal with respect to the Si substrate surface, and a surface in a second plane, parallel to the first plane. Then, selectively forming a SiGe optical path overlying the Si normal feature includes forming a SiGe vertical optical path overlying the normal feature walls.

Abstract: A solid state p-n heterojunction comprising an electron conductor and a hole conductor; it further comprises a sensitising semiconductor, said sensitizing semiconductor being located at an interface between said electron conductor and said hole conductor. In particular, the sensitizing semiconductor is in form of quantum-dots. A solid state sensitized photovoltaic cell comprises such a heterojunction between two electrodes.

Abstract: Embodiments of the present invention include an apparatus, method, and system for a photodetector with a polarization state sensor.