Abstract: A photosensor includes a semiconductor thin film for photoelectric conversion having a first side portion and a second side portion. A source electrode extends in the longitudinal direction of the semiconductor thin film and has a side edge portion that overlaps the first side portion of the semiconductor thin film, and a drain electrode extends in the longitudinal direction and has a side edge portion that overlaps the second side portion of the semiconductor thin film. At least one of the side edge portions of the source and drain electrodes has protruding portions which are arranged along the longitudinal direction and which overlap the semiconductor thin film, and notched portions formed between the protruding portions. An ohmic contact layer is formed between the semiconductor thin film and the protruding portions of the at least one of the side edge portions of the source and drain electrodes.

Abstract: An example photodetector includes a waveguide structure having an active waveguide comprising an absorber for converting photons conveying an optical signal into charge carriers conveying a corresponding electrical signal; a carrier collection layer for transporting the charge carriers conveying the electrical signal; and a secondary waveguide immediately adjacent to the carrier collection layer, for receiving the photons to be detected, and which is evanescently coupled to the active waveguide.

Abstract: A semiconductor light receiving element comprises: a substrate, a semiconductor layer of a first conductivity type formed on the substrate, a non-doped semiconductor light absorbing layer formed on the semiconductor layer of the first conductivity type, a semiconductor layer of a second conductivity type formed on the non-doped semiconductor light absorbing layer, and an electro-conductive layer formed on the semiconductor layer of the second conductivity type. A plurality of openings, periodically arrayed, are formed in a laminated body composed of the electro-conductive layer, the semiconductor layer of the second conductivity type, and the non-doped semiconductor light absorbing layer. The widths of the openings are less than or equal to the wavelength of incident light, and the openings pass through the electro-conductive layer and the semiconductor layer of the second conductivity type to reach the non-doped semiconductor light absorbing layer.

Abstract: An image sensor may be formed from a planar semiconductor substrate. The image sensor may have an array of pixels. Each pixel may have a photosensitive element that is formed in the substrate and may have a light guide in a dielectric stack that guides light from a microlens and color filter to the photosensitive element. The light guides in pixels that are offset from the center of the image sensor may be tilted so that their longitudinal axes each form a non-zero angle with a vertical axis that lies perpendicular to the planar semiconductor substrate. These light guides may have laterally elongated openings that help collect light. A light guide may have a lower opening that matches the size of an associated photosensitive element. Photosensitive elements that are laterally offset from the center of the image sensor may be tilted. Pixels of different colors may have off-center photosensitive elements.

Abstract: A photo detector includes a photoelectric conversion layer having a periodic structure made of a semiconductor material on a surface of the photoelectric conversion layer. In the photo detector, at least a part of a resonance region formed by the periodic structure is included in the photoelectric conversion layer of the photo detector.

Abstract: A solid state imaging device includes a plurality of imaging pixels that are arranged two-dimensionally along a main face of a semiconductor substrate. Each imaging pixel in the solid state imaging device includes a photodiode that performs photoelectric conversion and a color filter that is disposed higher in the Z axis direction than the photodiode. Also, light blocking portions have been formed between pairs of adjacent imaging pixels, on the main face of the semiconductor substrate to a height in a thickness direction (Z axis direction) of the semiconductor substrate that is substantially equal to or higher than top edges of the optical filters. Each light blocking portion is constituted from a combination of a light blocking film and a light blocking wall.

Abstract: A mesa photodiode which includes a mesa, the sidewall of the mesa is a surface that is inclined in the direction in which the bottom of the mesa becomes wider. At least the sidewall of the mesa is covered with a semiconductor layer of a first conductivity type, a second conductivity type, a semi-insulating type, or an undoped type. The semiconductor layer is grown on at least the sidewall of the mesa. The inclined angle of the inclined surface of the mesa at the upper end portion is smaller than the inclined angle of the inclined surface of the mesa at the lower end portion.

Abstract: The invention relates to an avalanche photodiode having enhanced gain uniformity enabled by a tailored diffused p-n junction profile. The tailoring is achieved by a two stage doping process incorporating a solid source diffusion in combination with conventional gas source diffusion. The solid source diffusion material is selected for its solubility to the dopant compared to the solubility of the multiplication layer to dopant. The solid source has a diameter between the first and second diffusion windows. Thus, there are three distinct diffusion regions during the second diffusion. The dopant in the multiplication layer at the edge region, the dopant from the solid source material with a relatively higher dopant concentration (limited by the solubility of the dopant in the solid source material) at the intermediate region, and the central region exposed to an infinite diffusion source from the solid source material as it is continually charged with new dopant from the external gas source.

Abstract: The present invention changes layer polarities of an epitaxy structure of an avalanche photodiode into n-i-n-i-p. A transport layer is deposed above an absorption layer to prevent absorbing photon and producing electrons and holes. A major part of electric field is concentrated on a multiplication layer for producing avalanche and a minor part of the electric field is left on the absorption layer for transferring carrier without avalanche. Thus, bandwidth limit from a conflict between RC bandwidth and carrier transferring time is relieved. Meanwhile, active area is enlarged and alignment error is improved without sacrificing component velocity too much.

Abstract: An image sensor formed using a method for manufacturing a planar layer in a process for forming microlenses may be used in a complementary metal oxide semiconductor (CMOS) image sensor. Embodiments provide a planar layer that can improve the operation performance of an image sensor, a manufacturing method thereof, and the image sensor including the planar layer. Embodiments relate to a planar layer located under microlenses, the planar layer including valleys of patterns having a predetermined size, which may eliminate optical cross talk between adjacent pixels.

Abstract: A backside illuminated multi-junction solar cell module includes a substrate, multiple multi-junction solar cells, and a cell interconnection that provides a series connection between at least two of the multi-junction solar cells. The substrate may include a material that is substantially transparent to solar radiation. Each multi-junction solar cell includes a first active cell, grown over the substrate, for absorbing a first portion of the solar radiation for conversion into electrical energy and a second active cell, grown over the first active cell, for absorbing a second portion of the solar radiation for conversion into electrical energy. At least one of the first and second active cells includes a nitride.

Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Abstract: A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating the silicon substrate. The conductive layer fills up the through-holes and protrudes out from the through-holes. The light emitting diode is disposed on the top of the conductive layer protruding out from the through-holes and is located at the focus of the cup-structure.

Abstract: A paste in which semiconductor fine grain such as titanium oxide fine grain or the like and a binder made of a polymer compound are mixed is coated onto a transparent conductive substrate and sintered, thereby forming a semiconductor layer made of the semiconductor fine grain, after that, ultraviolet rays are irradiated to the semiconductor layer and, by using a photocatalyst effect of the semiconductor fine grain, an organic substance remaining in the semiconductor layer is removed.

Abstract: A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.

Abstract: An optical semiconductor includes a first semiconductor layer and at least one reflective element that is formed on the semiconductor layer. The at least one reflective element comprises alternating layers of high and low index layers. A crystalline semiconductor layer is formed on the at least one reflective element.

Abstract: A semiconductor photosensitive element comprises: a semiconductor substrate of a first conductivity type; a first light absorption layer, a first semiconductor layer of a second conductivity type, a first semiconductor layer of the first conductivity type, a second light absorption layer, and a second semiconductor layer of a second conductivity type, arranged in this order on the semiconductor substrate; a first electrode connected the second semiconductor layer of the second conductivity type; a second electrode connected to the semiconductor substrate; and a third electrode electrically connecting the first semiconductor layer of the first conductivity type to the first semiconductor layer of the second conductivity type. The third electrode is located outside a light detection region for detecting optical signals.

Abstract: An image sensor device includes an optical black pixel region and an active pixel region. The image sensor device includes a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon, a pixel metal wire layer including a transparent material on the light receiving unit and including a plurality of metal wires therein, and a filter unit on the pixel metal wire layer. The filter unit includes a plurality of filters that are configured to transmit light according to a wavelength thereof. The filters of the filter unit in the optical black pixel region of the image sensor device have a single color. The image sensor device further includes a light blocking layer in the optical black pixel region between the filter unit and the light receiving unit. The light blocking layer is configured to block light that passes through the filter unit.

Abstract: The present invention provides a front-illuminated avalanche photodiode (APD) with improved intrinsic responsivity, as well as a method of fabricating such a front-illuminated APD. The front-illuminated APD comprises an APD body of semiconductor material, which includes a substrate and a layer stack disposed on a front surface of the substrate. The layer stack includes an absorption layer, a multiplication layer, and a field-control layer. Advantageously, a back surface of the APD body is mechanically and chemically polished, and a reflector having a reflectance of greater than 90% at the absorption wavelength band is disposed on the back surface of the APD body. Thus, incident light that is not absorbed in a first pass through the absorption layer is reflected by the reflector for a second pass through the absorption layer, increasing the intrinsic responsivity of the front-illuminated APD.

Abstract: An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the light absorption and emission effects of quantum dots and can convert high energy light to low energy light. The efficiency of a solar cell may be improved by providing the cell with a film that converts light above the spectrum-responsive region to light in the cell's spectrum-responsive region. The absorption wavelength region of the films can be broadened by providing the quantum dot compound in a variety of average particle sizes, for example, by providing a mixture of a first quantum dot compound having a first average particle size and a first quantum dot compound having a second average particle size.

Abstract: An ultrasensitive optical detector with high resolution in time, using a waveguide, and a processes for manufacturing this detector. The detector is configured to detect at least one photon and includes a dielectric substrate and at least one detection element on the substrate, configured to generate an electrical signal starting from energy of the photon received, and a guide element to guide the photon, the energy of which is then absorbed by the detection element at an absorption zone which is less than 100 nm thick. The detection element is substantially straight on the substrate and is short, and the guide element includes a single mode light waveguide with strong confinement, placed on the detection element. The detector is particularly applicable to detection and localization of operating defects in a semiconducting circuit.

Abstract: Embodiments relate to a dual image sensor which includes a first device including a first wafer having a first inclined step, a first reflective face on an inclined plane on the first inclined step, at least one first microlens over a lower end surface adjacent the first inclined step, and a first via-hole filled with metal on an upper end face adjacent the first inclined step. A second device in the dual image sensor includes a second wafer having a second inclined step, a second reflective face on an inclined plane on the second inclined step, and at least one second microlens over a first portion of an upper end face adjacent the second inclined step. A dual image sensor is formed by connecting the metal in the first via-hole and the metal in the second via-hole together. The dual image sensor is capable of imaging light incident from one or both sides as well as light incident in front or rear of the image sensor.

Abstract: A device comprises a photoelectric conversion portion including a light receiving surface, and a condensing structure which condenses light to the photoelectric conversion portion, wherein in the condensing structure, a first insulating film and a second insulating film having a refractive index higher than that of the first insulating film are laid out in a plane perpendicular to a normal passing through a center of the light receiving surface such that a density of the second insulating film is higher in a central portion of the plane than in a peripheral portion of the plane, and a layout pattern of the first insulating film and the second insulating film in the plane includes a portion having a dimension not more than a maximum wavelength of a visible light range.

Abstract: A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate.

Abstract: A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.

Abstract: An analytical system-on-a-chip can be used as an analytical imaging device, for example, for detecting the presence of a chemical compound. A layer of analytical material is formed on a transparent layer overlying a solid state image sensor. The analytical material can react in known ways with at least one reactant to block light or to allow light to pass through to the array. The underlying sensor array, in turn, can process the presence, absence or amount of light into a digitized signal output. The system-on-a-chip may also include software that can detect and analyze the output signals of the device.

Abstract: Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.

Abstract: A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more first patterned layers deposited on top of the buffer layer, wherein each of the first patterned layers is comprised of a bottom lateral epitaxial overgrowth (LEO) mask layer and a LEO nitride layer filling holes in the bottom LEO mask layer, one or more active layers formed on the first patterned layers, and one or more second patterned layers deposited on top of the active layer, wherein each of the second patterned layers is comprised of a top LEO mask layer and a LEO nitride layer filling holes in the top LEO mask layer, wherein the top and/or bottom LEO mask layers act as a mirror, optical confinement layer, grating, wavelength selective element, beam shaping element or beam directing element for the active layers.

Abstract: In a solid-state imaging device including an on-chip microlens and a light-receiving part to receive incident light condensed by the on-chip microlens, an optical waveguide extending from an undersurface part of the microlens to the light-receiving part and for guiding the incident light condensed by the microlens to the light-receiving part is formed to be integrated with the microlens. By this, since the incident light condensed by the microlens is incident on the light-receiving part with little loss, the sensitivity is improved.

Abstract: An exposure apparatus includes (a) a projection optical system to project a reticle pattern onto a plate by using a light from a light source, and (b) a photo detector unit to detect the light via the projection optical system. The photo detector unit includes (i) a substrate, which is patterned with a wiring pattern and transmits the light, (ii) a detector to detect the light, and (iii) a bump to space the substrate from the detector, and to electrically connect the detector and the wiring pattern of the substrate.

Abstract: An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor layer formed on the insulating substrate, and a gate electrode formed between the insulating substrate and the first semiconductor layer. Each of the at least one PIN diode includes a second polysilicon semiconductor layer formed on the insulating substrate. The at least one reflector is formed in the same layer as the gate electrode and opposite the second semiconductor layer or layers of the at least one PIN diode.

Abstract: Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.

Abstract: Method, apparatus, and/or system providing a backside illuminated imaging device. A non-planar metallic or otherwise reflective layer is provided in an image pixel cell at the frontside of the device substrate to capture radiation passing through the device substrate. The non-planar surface is formed to be capable of reflecting substantially all such radiation back to a photosensor located in the same pixel cell.

Abstract: A method for manufacturing a detection device includes the steps of providing bonding bumps on at least one of a light-receiving element array and a read-out circuit multiplexer, fixing a bump height adjusting member for adjusting the heights of the bumps to the light-receiving element array and/or the read-out circuit multiplexer on which the bumps are provided, and pressing a flat plate on the tops of the bumps and deforming the bumps until the flat plate comes in contact with the end of the bump height adjusting member.

Abstract: Photodetection devices and methods are described. The photodetection devices comprise semiconductor tapered pillars.

Abstract: An image sensor includes a trench formed in a semiconductor substrate, a first reflection part formed in the trench and having an inclined, curved surface, a second reflection part formed on the first reflection part such that a remaining space of the trench is filled with the second reflection part, and a vertical type photodiode formed on a region of the substrate between trenches. A method for forming the image sensor includes forming a trench in a semiconductor substrate, forming a first reflection part having an inclined, curved surface in the trench, forming a second reflection part on the first reflection part such that a remaining space of the trench is filled with the second reflection part, and forming a vertical type photodiode on a region of the substrate between trenches.

Abstract: A semiconductor device (1) includes a plurality of photodiodes (20) on a semiconductor substrate (11). Cathodes (22) and a common anode (21) of the plurality of photodiodes (20 (20a, 20b)) are formed so as to be electrically independent from the semiconductor substrate (11), the plurality of photodiodes (20) have the common anode (21) and the plurality of separate cathodes (22), and an output of the common anode (21) is considered to be equivalent to a sum of outputs of the plurality of separate photodiodes (20). Alternatively, the plurality of photodiodes have a common cathode and a plurality of separate anodes, and an output of the common cathode is considered to be equivalent to a sum of outputs of a plurality of separate photodiodes. By completely electrically isolating the anode and the cathode of the photodiodes from the substrate, the noise characteristic can be reduced, and crosstalk can be reduced.

Abstract: A semiconductor photodetector includes a semiconductor substrate of a first conductivity type, a light absorption layer of the first conductivity type on the semiconductor substrate and absorbing light, a diffraction grating layer on the light absorption layer and including a diffraction grating diffracting light, a first light transmissive layer of a second conductivity type on the diffraction grating layer and transmitting light, and a second light transmissive layer of the first conductivity type on the diffraction grating layer and surrounding the first light transmissive layer, the second light transmissive layer transmitting light. The diffraction grating surrounds a region of the diffraction grating layer that is directly below the first light transmissive layer.

Abstract: An image sensor with an image area having a plurality of pixels with each pixel having a photodetector and a substrate of a first conductivity type and a first layer of a second conductivity type formed between the substrate and the photodetectors. The first layer spans the image area and is biased at predetermined potential with respect to the substrate for driving excess carriers into the substrate to reduce cross talk. One or more adjacent active electronic components can be disposed in the first layer within each pixel and electronic circuitry can be disposed in the substrate outside of the image area.

Abstract: In a dye sensitized photoelectric conversion device having an electrolyte layer (6) between a semiconductor electrode (3) including, for example, fine semiconductor particles to which a sensitizing dye is adsorbed and a counter electrode (5), two kinds of dyes are used as the dye, and the two kinds of dyes are adsorbed onto the surface of the semiconductor electrode (3) at the sites different from each other. The fine semiconductor particles include, for example, TiO2. Tris(isothiocyanate)-ruthenium(II)-2,2?:6?,2?-terpyridine-4,4?,4?-tricarboxylic acid and 2-cyano-3-[4-[4-(2,2-diphenylethenyl)phenyl]-1,2,3,3a,4,8b-hexahydrocyclopent[b]indol-7-yl]-2-propenoic acid are used, for example, as the two kinds of dyes. Thereby, a dye sensitized photoelectric conversion device such as a dye sensitized solar cell capable of obtaining higher light absorption rate and photoelectric conversion efficiency than in a case of using one kind of dye at high purity, as well as a manufacturing method thereof are provided.

Abstract: Embodiments relate to a CMOS image sensor and to a method for manufacturing a CMOS image sensor that may disperse stray beam between microlenses. According to embodiments, the method for manufacturing the CMOS image may include forming an interlayer dielectric layer on a semiconductor substrate including a plurality of photo diodes, forming a color filter layer corresponding to the photo diodes on the interlayer dielectric layer, forming a planarization layer on the color filter layer, forming microlenses on the planarization layer, after depositing an insulating layer over the microlenses, forming a trench in a concave lens shape in the insulating layer between the microlenses, and forming a concave lens gap-filling insulating materials inside the trench. In embodiments, concave lenses may be formed between microlenses in a CMOS image sensor and stray beams between the microlenses may be dispersed and recondensed into the microlenses.

Abstract: A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and a microlens formed on each of the plurality of color filters.

Abstract: A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.

Abstract: A solar cell includes an electron conductor, a plurality of quantum dots on a surface of the electron conductor forming a quantum dot layer, and a supplemental light-absorbing material in one or more gaps in the quantum dot layer. The supplemental light-absorbing material is capable of absorbing light that passes through the one or more gaps in the quantum dot layer and converting the absorbed light into holes and electrons. The supplemental light-absorbing material may also inhibit a hole conductor from coming into contact with the electron conductor. The supplemental light-absorbing material could include one or more polymers, semiconductors, fluorophores, metal particles, nanowires, nanotubes, and nanoparticles.

Abstract: A grating structure for channeling and concentrating incident radiation includes a regular pattern of elements each with a metallic shell partially surrounding at least one subcavity. The subcavity is filled with a dielectric or semiconductor. Light of one or more predetermined wavelength ranges can be concentrated in the subcavity(s) and then efficiently channeled through the grooves between adjacent elements. An optoelectronic device includes the structure superposed on a substrate, which can be semiconductive, and the elements of the grating used as electrodes and adapted to allow a potential difference between adjacent (electrode) elements. The optoelectronic devices include photodetectors, e.g., metal-semiconductor-metal, pn, pin, avalanche, LEDs, IR emitting devices, and biological or chemical sensors.

Abstract: Embodiments of an optical device including at least two transparent layers are disclosed.

Abstract: An electro-optic device includes a semiconducting layer in which is formed a waveguide, a modulator formed across the waveguide comprising a p-doped region to one side and an n-doped region to the other side of the waveguide, wherein at least one of the doped regions extends from the base of a recess formed in the semiconducting layer. In this way, the doped regions can extend further into the semiconducting layer and further hinder escape of charge carriers without the need to increase the diffusion distance of the dopant and incur an additional thermal burden on the device. In an SOI device, the doped region can extend to the insulating layer. Ideally, both the p and n-doped regions extend from the base of a recess, but this may be unnecessary in some designs. Insulating layers can be used to ensure that dopant extends from the base of the recess only, giving a more clearly defined doped region.

Abstract: Disclosed herein is a solid-state imaging element which includes a plurality of drive signal inputs, a plurality of bus lines, and a plurality of vertical transfer register electrodes. In the solid-state imaging element, a charge accumulated in light-receiving elements in a pixel region is vertically transferred by the drive signals input to the electrodes. Each of the electrodes has a contact part connected to the second contact and having a width smaller than a width of the electrodes in the pixel region, and a blank region is formed between predetermined adjacent two of the contact parts so that a width of the blank region is larger than a distance between respective two of the contact parts other than the predetermined adjacent two of the contact parts. The first contact is disposed on the blank region.

Abstract: A waveguide photodetector detecting light incident on a light detecting end face includes: a substrate; and a layer stack structure on the substrate and including a semiconductor layer of a first conductivity type, an undoped semiconductor layer, and a semiconductor layer of a second conductivity type. The undoped semiconductor layer includes two or more undoped light absorbing layers and undoped non-light-absorbing layers. One non-light-absorbing layer is disposed between adjacent undoped light absorbing layers. The non-light-absorbing layers have a bandgap wavelength shorter than the wavelength of the incident light that is detected.

Abstract: A floating body germanium (Ge) phototransistor and associated fabrication process are presented. The method includes: providing a silicon (Si) substrate; selectively forming an insulator layer overlying the Si substrate; forming an epitaxial Ge layer overlying the insulator layer using a liquid phase epitaxy (LPE) process; forming a channel region in the Ge layer; forming a gate dielectric, gate electrode, and gate spacers overlying the channel region; and, forming source/drain regions in the Ge layer. The LPE process involves encapsulating the Ge with materials having a melting temperature greater than a first temperature, and melting the Ge using a temperature lower than the first temperature. The LPE process includes: forming a dielectric layer overlying deposited Ge; melting the Ge; and, in response to cooling the Ge, laterally propagating an epitaxial growth front into the Ge from an underlying Si substrate surface.