With Means For Increasing Light Absorption (e.g., Redirection Of Unabsorbed Light) Patents (Class 257/436)
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Publication number: 20130099345Abstract: A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.Type: ApplicationFiled: September 19, 2012Publication date: April 25, 2013Applicant: BANDGAP ENGINEERING, INC.Inventor: BANDGAP ENGINEERING, INC.
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Patent number: 8426722Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.Type: GrantFiled: October 24, 2007Date of Patent: April 23, 2013Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Mariana R. Munteanu, Erol Girt
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Patent number: 8415194Abstract: A photovoltaic device including a rear electrode which may also function as a rear reflector. In certain example embodiments of this invention, the rear electrode includes a metallic based reflective film that is oxidation graded, so as to be more oxided closer to a rear substrate (e.g., glass substrate) supporting the electrode than at a location further from the rear substrate. In other words, the rear electrode is oxidation graded so as to be less oxided closer to a semiconductor absorber of the photovoltaic device than at a location further from the semiconductor absorber in certain example embodiments. In certain example embodiments, the interior surface of the rear substrate may optionally be textured so that the rear electrode deposited thereon is also textured so as to provide desirable electrical and reflective characteristics. In certain example embodiments, the rear electrode may be of or include Mo and/or MoOx, and may be sputter-deposited using a combination of MoOx and Mo sputtering targets.Type: GrantFiled: December 20, 2010Date of Patent: April 9, 2013Assignee: Guardian Industries Corp.Inventors: Alexey Krasnov, Willem den Boer, Scott V. Thomsen, Leonard L. Boyer, Jr.
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Patent number: 8410570Abstract: A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protective layer is provided at an interface with the first doped layer and second doped layer. This protective layer is capable of generating a layer of negative charge at the interface. The protective layer may further be positioned within the second doped layer to form an intermediate protective structure.Type: GrantFiled: May 17, 2010Date of Patent: April 2, 2013Assignees: STMicroelectronics S.A., STMicroelectronics (Crolles 2) SASInventors: Jorge Regolini, Michael Gros-Jean
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Patent number: 8409904Abstract: Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection.Type: GrantFiled: June 21, 2011Date of Patent: April 2, 2013Assignee: International Business Machines CorporationInventors: James W. Adkisson, John J. Ellis-Monaghan, Jeffrey P. Gambino, Charles F. Musante
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Patent number: 8399949Abstract: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.Type: GrantFiled: June 30, 2011Date of Patent: March 19, 2013Assignee: Micron Technology, Inc.Inventor: Roy E. Meade
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Patent number: 8384176Abstract: A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.Type: GrantFiled: October 19, 2005Date of Patent: February 26, 2013Assignee: Sony CorporationInventors: Masakazu Furukawa, Keiji Mabuchi
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Patent number: 8373060Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.Type: GrantFiled: October 24, 2007Date of Patent: February 12, 2013Assignee: Zetta Research and Development LLC—AQT SeriesInventors: Mariana R. Munteanu, Erol Girt
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Patent number: 8368157Abstract: Image sensors with backside illumination image pixel arrays are provided. An image pixel array may have image pixels that are formed on a silicon substrate having front and back surfaces. The pixel array may have photodiodes formed in the front surface. A dielectric stack may be formed on the front surface. The dielectric stack may include interconnect structures and reflective light guides. A color filter array may be formed on the back surface of the substrate. Microlenses may be formed on the color filter array from the side facing the back surface. The pixel array may receive incoming light through the microlenses. The incoming light may enter the substrate through the back surface. The incoming light may penetrate the substrate and may be reflected by a light reflector in the reflective light guide back towards the photodiode. The image pixel array may exhibit improved quantum efficiency, sensitivity, and image contrast.Type: GrantFiled: April 6, 2010Date of Patent: February 5, 2013Assignee: Aptina Imaging CoporationInventor: Victor Lenchenkov
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Patent number: 8361834Abstract: A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. The method also includes heating the substrate in a baking ambient to a baking temperature and for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a deposition temperature and for a deposition time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a firing time period.Type: GrantFiled: March 1, 2010Date of Patent: January 29, 2013Assignee: Innovalight, Inc.Inventors: Dmitry Poplavskyy, Malcolm Abbott
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Publication number: 20130015547Abstract: Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device.Type: ApplicationFiled: March 24, 2011Publication date: January 17, 2013Applicant: FUJIFILM CORPORATIONInventor: Mitsumasa Hamano
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Publication number: 20130009045Abstract: A unit cell for use in an imaging system may include a layer of semiconductor material and a contact formed on the layer of semiconductor material. The layer of semiconductor material may have a bandgap such that the layer of semiconductor material absorbs photons of a particular range of wavelengths, transmits photons that are not of the particular range of wavelengths, and generates a photocurrent, referenced to a ground common, in response to the absorbed photons. The layer of semiconductor material may be formed on a substrate that transmits photons incident thereon to the layer of semiconductor material. The contact may be electrically coupled to the layer of semiconductor material such that the photocurrent is conducted from one surface of the contact to an opposing surface of the contact.Type: ApplicationFiled: July 7, 2011Publication date: January 10, 2013Applicant: Raytheon CompanyInventors: Edward P. Smith, Kasey D. Smith
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High Fill-Factor Laser-Treated Semiconductor Device on Bulk Material with Single Side Contact Scheme
Publication number: 20130001729Abstract: The present disclosure provides systems and methods for configuring and constructing a single photo detector or array of photo detectors with all fabrications circuitry on a single side of the device. Both the anode and the cathode contacts of the diode are placed on a single side, while a layer of laser treated semiconductor is placed on the opposite side for enhanced cost-effectiveness, photon detection, and fill factor.Type: ApplicationFiled: July 2, 2012Publication date: January 3, 2013Applicant: SiOnyx, Inc.Inventors: Neal T. Kurfiss, James E. Carey, Xia Li -
Patent number: 8330243Abstract: A semiconductor light-detecting element includes: a semiconductor substrate of a first conductivity type having a band gap energy, a first principal surface, and a second principal surface opposed to the first principal surface; a first semiconductor layer of the first conductivity type on the first principal surface and having a band gap energy smaller than the band gap energy of the semiconductor substrate; a second semiconductor layer of the first conductivity type on the first semiconductor layer; an area of a second conductivity type on a part of the second semiconductor layer; a first electrode connected to the second semiconductor layer; a second electrode connected to the area; and a low-reflection film on the second principal surface. The second principal surface is a light-detecting surface detecting incident light, and no substance or structure having a higher reflection factor, with respect to the incident light, than the low-reflection film, is located on the second principal surface.Type: GrantFiled: January 31, 2011Date of Patent: December 11, 2012Assignee: Mitsubishi Electric CorporationInventor: Matobu Kikuchi
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Patent number: 8324702Abstract: A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.Type: GrantFiled: March 8, 2011Date of Patent: December 4, 2012Assignee: Sony CorporationInventors: Masakazu Furukawa, Keiji Mabuchi
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Publication number: 20120299142Abstract: Disclosed is a photoelectric conversion device provided with transparent electrodes having high electric conductivity, low optical absorptance, and capable of obtaining a high light scattering effect. A first transparent electrode layer (22a), formed on the substrate (20) side, and a second transparent electrode layer (22b), formed at a position farther away from the substrate (20) than the first transparent electrode layer (22a) and having a density less than that of the first transparent electrode layer (22a), are formed as a transparent electrode layer (22), and a textured structure is provided.Type: ApplicationFiled: July 26, 2012Publication date: November 29, 2012Applicant: SANYO Electric Co., Ltd.Inventors: Daiji KANEMATSU, Takeyuki SEKIMOTO, Shigeo YATA, Akira TERAKAWA
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Patent number: 8319303Abstract: An image sensor includes an array of photo-sensing regions formed in a semiconductor substrate, a dielectric layer over the array of photo-sensing regions, and an array of microlenses formed in the dielectric layer. Each of the microlenses is center-aligned over one of the photo-sensing regions and has a truncated plano-convex shape. The microlenses have an index of refraction that is higher than the dielectric layer's refraction index. Each of the microlenses has a smooth circular top, a flat circular bottom, and a curved circumferential side convex towards the semiconductor substrate.Type: GrantFiled: January 10, 2011Date of Patent: November 27, 2012Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Jianping Yang, Herb Huang, JieGuang Huo
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Publication number: 20120292729Abstract: Semiconductor structures, devices, and methods that can exhibit various enhanced properties, such as, for example, enhanced light detection properties are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material having an enhanced absorption region and a first defect in the enhanced absorption region, where the first defect is a deep-level defect generated by a first defect carrier type that is either a deep-level donor carrier type or a deep-level acceptor carrier type. The device can also include a second defect in the enhanced absorption region, where the second defect is either a shallow-level defect or a deep-level defect, and where the second defect is generated by a second defect carrier type that is opposite to the first defect carrier type. Furthermore, the enhanced absorption region has an external quantum efficiency of at least about 0.5% for electromagnetic radiation wavelengths greater than 1250 nm.Type: ApplicationFiled: May 15, 2012Publication date: November 22, 2012Applicant: SiOnyx, Inc.Inventor: Christopher Vineis
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Patent number: 8314469Abstract: An image sensor structure and a method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer.Type: GrantFiled: September 4, 2009Date of Patent: November 20, 2012Assignee: United Microelectronics Corp.Inventor: Cheng-Hung Yu
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Patent number: 8294234Abstract: A mesa photodiode which includes a mesa, the sidewall of the mesa is a surface that is inclined in the direction in which the bottom of the mesa becomes wider. At least the sidewall of the mesa is covered with a semiconductor layer of a first conductivity type, a second conductivity type, a semi-insulating type, or an undoped type. The semiconductor layer is grown on at least the sidewall of the mesa. The inclined angle of the inclined surface of the mesa at the upper end portion is smaller than the inclined angle of the inclined surface of the mesa at the lower end portion.Type: GrantFiled: April 20, 2010Date of Patent: October 23, 2012Assignee: Renesas Electronics CorporationInventors: Isao Watanabe, Tomoaki Koi
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Patent number: 8283555Abstract: A solar power generation system includes a plurality of individual modules, each formed from a photovoltaic cell, a solar concentrator, a sealed evaporative cooling system and a heat sink. The solar concentrator focuses sunlight onto a front side the cell to generate electricity. The cooling system circulates a coolant in a liquid state to an evaporative cooling chamber having a wall defined at least partially by a back side of the cell to remove heat from the cell by direct contact between the coolant and the cell, and emits coolant in a vapor state to a condenser where the vapor coolant is condensed to a liquid state. The heat sink may be any suitable body of water, such that the condenser may be at least partially submerged therein. The modules are combined to form a platform that is rotated on the body of water by a drive device to provide tracking of the sun.Type: GrantFiled: June 23, 2009Date of Patent: October 9, 2012Assignee: Solaris Synergy Ltd.Inventors: Yuri Kokotov, Michael A. Reyz, Joseph Fisher
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Patent number: 8269303Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode.Type: GrantFiled: March 9, 2009Date of Patent: September 18, 2012Assignee: NEC CorporationInventors: Junichi Fujikata, Toru Tatsumi, Akihito Tanabe, Jun Ushida, Daisuke Okamoto, Kenichi Nishi
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Patent number: 8269299Abstract: A two-dimensional solid-state imaging device includes: pixel regions arranged in a two-dimensional matrix, wherein each pixel region has a plurality of subpixel regions, a metal layer with an opening of an opening size smaller than the wavelength of an incoming electromagnetic wave and a photoelectric conversion element are arranged with an insulating film interposed therebetween, at least one photoelectric conversion element is arranged in the opening provided at a portion of the metal layer in each subpixel region, a projection image of the opening is included in a light receiving region of the photoelectric conversion element, the opening is arrayed so as to cause a resonance state based on surface plasmon polariton excited by the incoming electromagnetic wave, and near-field light generated near the opening in the resonance state is converted to an electrical signal by the photoelectric conversion element.Type: GrantFiled: April 30, 2010Date of Patent: September 18, 2012Assignee: Sony CorporationInventor: Sozo Yokogawa
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Patent number: 8269301Abstract: Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.Type: GrantFiled: April 4, 2007Date of Patent: September 18, 2012Assignee: Hitachi Kyowa Engineering Co., Ltd.Inventors: Shohei Hata, Eiji Sakamoto, Naoki Matsushima, Hideaki Takemori, Masatoshi Seki
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Patent number: 8263852Abstract: A heat sink has a number of fixing frames. The fixing frames are soldered with of solar cell devices. And, the fixing frames are defined with insulating ink. Hence, the fixing frames can be used for insulating and locating the of a solar cell devices. Besides, with the insulating ink, solar cells of the solar cell devices are prevented from being contacted with the heat sink. As a result, a good electrical property is obtained on assembling and using the solar cell devices.Type: GrantFiled: June 23, 2008Date of Patent: September 11, 2012Assignee: Atomic Energy Council—Institute of Nuclear Energy ResearchInventors: Zun-Hao Shih, Hwen-Fen Hong, Kuo-Hsin Lin
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Publication number: 20120211853Abstract: A solid-state imaging apparatus includes: an imaging section having a light-receiving portion for receiving light from an object to image the object; and a substrate on which the imaging section is disposed, wherein a predetermined member provided on the substrate in the neighborhood of the light receiving portion is partially or entirely coated in black.Type: ApplicationFiled: January 18, 2012Publication date: August 23, 2012Applicant: Sony CorporationInventors: Masahiko SHIMIZU, Toshiaki IWAFUCHI
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Publication number: 20120206723Abstract: A photodiode device including a photosensitive diffusion junction within a single layer. The photodiode device further includes a resonant grating located within the single layer. The photosensitive diffusion junction is located within the resonant grating.Type: ApplicationFiled: January 19, 2012Publication date: August 16, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Matthias Fertig, Thomas Morf, Nikolaj Moll, Martin Kreissig, Karl-Heinz Brenner, Maximilian Auer
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Patent number: 8242571Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.Type: GrantFiled: April 20, 2010Date of Patent: August 14, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Dongwoo Suh, Sanghoon Kim, Jiho Joo, Gyungock Kim
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Patent number: 8243186Abstract: Disclosed is a solid-state image pickup apparatus including a plurality of pixels. The plurality of pixels each including a lens, a photoelectric converter to convert incident light that passes through the lens into an electrical signal, and a waveguide provided between the lens and the photoelectric converter. The waveguide is disposed so that a center of at least a part of the waveguide on a light exit side is shifted from a main light beam that passes a center of the lens in a direction in which an area where an end portion of the waveguide on the light exit side is overlapped with the photoelectric converter is increased.Type: GrantFiled: January 28, 2010Date of Patent: August 14, 2012Assignee: Sony CorporationInventor: Tomohiro Yamazaki
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Patent number: 8237237Abstract: A solid-state imaging device includes a light-receiving portion, which serves as a pixel, and a waveguide, which is disposed at a location in accordance with the light-receiving portion and which includes a clad layer and a core layer embedded having a refractive index distribution in the wave-guiding direction.Type: GrantFiled: September 25, 2009Date of Patent: August 7, 2012Assignee: Sony CorporationInventors: Hiromi Wano, Takamasa Tanikuni, Shinichi Yoshida
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Patent number: 8236597Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a surface region characterized by a copper poor surface having a copper-to-indium atomic ratio of less than about 0.95:1.Type: GrantFiled: September 25, 2009Date of Patent: August 7, 2012Assignee: Stion CorporationInventor: Howard W. H. Lee
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Patent number: 8237238Abstract: An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a part of the deep well layer under each first sensing unit and an area of each first sensing unit is a first area ratio. A ratio between an area of a part of the deep well layer under each second sensing unit and an area of each second sensing unit is a second area ratio. A ratio between an area of a part of the deep well layer under each third sensing unit and an area of each third sensing unit is a third area ratio. The first area ratio is greater than the second and the third area ratios.Type: GrantFiled: December 29, 2010Date of Patent: August 7, 2012Assignee: Novatek Microelectronics Corp.Inventors: Wei-Kuo Huang, Yu-Yuan Yao
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Patent number: 8227885Abstract: A selective light absorbing semiconductor surface is disclosed. Said semiconductor surface is characterized by the presence of indentations or protrusions comprising a grating of dimensions such as to enhance the absorption of selected frequencies of radiation. In a preferred embodiment of the present invention, said grating is formed on the surface of a doped semiconductor for the purposes of optical frequency down conversion. The semiconductor is doped so as to create energy levels within the forbidden zone between the conduction and valence bands. Incident radiation excites electrons from the valence to conduction band from where they decay to the meta-stable newly created energy level in the forbidden zone. From there, electrons return to the valence band, accompanied by the emission of radiation of lower frequency than that of the incident radiation. Optical frequency down-conversion is thus efficiently and rapidly accomplished.Type: GrantFiled: July 5, 2007Date of Patent: July 24, 2012Assignee: Borealis Technical LimitedInventors: Avto Tavkhelidze, Amiran Bibilashvili, Zaza Taliashvili
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Patent number: 8222516Abstract: A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.Type: GrantFiled: February 20, 2008Date of Patent: July 17, 2012Assignee: SunPower CorporationInventor: Peter John Cousins
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Publication number: 20120175677Abstract: A photocell which operates at multiple wavelengths for efficient power generation from broadband incident radiation. According to a preferred embodiment, the photocell is a multi-layer device that includes a first outer layer, a middle layer and an inner layer disposed on a substrate. All three layers are formed from II-VI semiconductor layers. The device is arranged such that the outer layer has a high band gap, the middle layer has a band gap which is less than half the band gap of the outer layer and the inner layer has a band gap which is less than half that of the substrate. Thus, there is a step change in band gap between various layers.Type: ApplicationFiled: September 21, 2010Publication date: July 12, 2012Applicant: QINETIQ LIMITEDInventors: Neil Thomson Gordon, Timothy Ashley
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Patent number: 8217479Abstract: An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges.Type: GrantFiled: January 21, 2010Date of Patent: July 10, 2012Assignee: Sony CorporationInventors: Itaru Oshiyama, Susumu Hiyama
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Patent number: 8217482Abstract: Disclosed are various embodiments of an infrared proximity sensor package comprising an infrared transmitter die, an infrared receiver die, a housing comprising outer sidewalls, a first recess, a second recess and a partitioning divider disposed between the first and second recesses. The transmitter die is positioned in the first recess, the receiver die is positioned within the second recess, and at least the partitioning divider of the housing comprises liquid crystal polymer (LCP) such that infrared light internally-reflected within the housing in the direction of the partitioning divider is substantially attenuated or absorbed by the LCP contained therein.Type: GrantFiled: December 21, 2007Date of Patent: July 10, 2012Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.Inventors: Suresh Basoor, Peng Yam Ng, Deng Peng Chen
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Patent number: 8203195Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: July 20, 2009Date of Patent: June 19, 2012Assignee: InVisage Technologies, Inc.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Patent number: 8198693Abstract: A solid-state image pickup apparatus includes: a substrate in which a charge generation portion that generates a signal charge is formed on a surface layer; a layer covering an upper surface of the substrate; a waveguide formed on the layer covering the upper surface of the substrate at a position corresponding to the charge generation portion; a hollow portion formed on the layer covering the upper surface of the substrate at a position on an outer side of the waveguide; and an optically-transparent layer formed on the layer covering the upper surface of the substrate such that at least the hollow portion becomes airtight.Type: GrantFiled: February 12, 2010Date of Patent: June 12, 2012Assignee: Sony CorporationInventor: Ikue Mizuno
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Patent number: 8198120Abstract: An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.Type: GrantFiled: January 28, 2009Date of Patent: June 12, 2012Assignee: Rohm and Haas Electronic Materials LLCInventors: Jitendra S. Goela, Michael A. Pickering, Neil D. Brown, Angelo Chirafisi, Mark Lefebvre, Jamie L. Triba
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Patent number: 8183612Abstract: Provided are an optical receiver and a method of forming the same. The optical receiver includes a lens, a photo detector, and a hetero-junction bipolar transistor. The lens is attached to a backside of a substrate. The photo detector is disposed on a top surface of the substrate. The hetero-junction bipolar transistor is disposed on the top surface of the substrate. The lens condenses an incident optical signal to transmit the condensed optical signal to the photo detector.Type: GrantFiled: July 7, 2009Date of Patent: May 22, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Young-Jun Chong, Eun-Soo Nam, Jae-Sik Sim, Yong-Hwan Kwon, Bong-Ki Mheen
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Patent number: 8183656Abstract: A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.Type: GrantFiled: December 13, 2007Date of Patent: May 22, 2012Assignee: NEC CorporationInventors: Daisuke Okamoto, Junichi Fujikata, Kenichi Nishi, Keishi Ohashi
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Patent number: 8158880Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer may be disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.Type: GrantFiled: January 17, 2008Date of Patent: April 17, 2012Assignee: AQT Solar, Inc.Inventors: Erol Girt, Mariana Rodica Munteanu
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Patent number: 8154062Abstract: An image sensor device includes a substrate including a light sensing, region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.Type: GrantFiled: October 16, 2009Date of Patent: April 10, 2012Assignee: Samsung Electronics Co., Ltd.Inventor: Byung-Jun Park
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Patent number: 8153886Abstract: An increased efficiency Concentrator Photovoltaic System having a plurality of solar cells laterally spaced from each other on a substrate panel. The solar cells are mounted on electrically conductive areas of an otherwise non-conductive top surface of the substrate with each cell isolated from another by a non-conductive area. The individual cells are connected using ribbons or wires, between the front contact of the solar cells to the conductive area of another cell to form a circuit connecting the cells in a desired configuration. A plurality of tubular enclosures for concentrating light on the solar cells are mounted directly above the solar cells.Type: GrantFiled: October 20, 2004Date of Patent: April 10, 2012Assignee: Amonix, Inc.Inventors: Vahan Garboushian, Alexander M. Slade
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Patent number: 8148762Abstract: Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength.Type: GrantFiled: July 8, 2008Date of Patent: April 3, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: In-Sung Joe, Yoon-dong Park, Young-gu Jin, Seung-hyuk Chang
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Patent number: 8138567Abstract: Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises an n-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.Type: GrantFiled: July 20, 2009Date of Patent: March 20, 2012Assignee: InVisage Technologies, Inc.Inventors: Igor Constantin Ivanov, Edward Hartley Sargent, Hui Tian
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Patent number: 8138534Abstract: Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.Type: GrantFiled: April 29, 2010Date of Patent: March 20, 2012Assignee: International Business Machines CorporationInventors: James W. Adkisson, John J. Ellis-Monaghan, Jeffrey P. Gambino, Charles F. Musante
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Patent number: 8129809Abstract: Disclosed are an image sensor and a manufacturing method thereof. The image sensor includes a circuit layer on a first surface of a semiconductor substrate, a metal interconnection layer on the circuit layer, trenches formed in a second surface of the semiconductor substrate along a boundary of a pixel, and a light blocking layer in the trenches. The backside illumination type image sensor according to the embodiment has a light blocking structure at a rear surface of the semiconductor substrate, thereby improving sensing efficiency while inhibiting interference between adjacent pixels.Type: GrantFiled: December 15, 2009Date of Patent: March 6, 2012Assignee: Dongbu Hitek Co., Ltd.Inventor: Hoon Jang
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Patent number: 8129213Abstract: Disclosed herein is a solid-state imaging device including: a semiconductor layer; a charge accumulation region configured to be formed inside the semiconductor layer and serve as part of a photodiode; and a reflective surface configured to be disposed inside or under the charge accumulation region and be so formed as to reflect light that has passed through the charge accumulation region and direct the light toward a center part of the charge accumulation region.Type: GrantFiled: August 24, 2009Date of Patent: March 6, 2012Assignee: Sony CorporationInventors: Harumi Ikeda, Masashi Nakazawa