Abstract: A photoelectric conversion apparatus has a plurality of photoelectric conversion elements arranged on a semiconductor substrate, a plurality of wiring layers arranged on the semiconductor substrate through the first and second insulation layers, and a high refractive index region which is arranged in an opening part that is arranged in the interlayer insulation layer so as to correspond to the photoelectric conversion element and has a higher refractive index than the interlayer insulation layers, wherein an area of a cross section parallel to a photoreceiving plane of the photoelectric conversion element in the high refractive index region increases as the position approaches to an upper part of the substrate from a photoreceiving plane of the photoelectric conversion element, namely, as the position approaches to a light-incident plane, and the increasing rate continuously increases with the increase of the area.

Abstract: An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.

Abstract: A structure includes a film having a plurality of nanoapertures. The nanoapertures are configured to allow the transmission of a predetermined subwavelength of light through the film via the plurality of nanoapertures. The structure also includes a semiconductor layer in connection with the film to facilitate the detection of the predetermined subwavelength of light transmitted through the film.

Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

Abstract: Provided are color filters formed of alternately stacked inorganic materials having different refractive indices, a color filter array, a method of manufacturing the color filter array, and an image sensor. A color filter can include a substrate and first and second inorganic films configured to filter light of a specific wavelength corresponding to a predetermined color, wherein the first and second inorganic films can be alternately stacked on the substrate and have different refractive indices from each other. The refractive index difference between the first inorganic film and the second inorganic film is at least 0.8. The color filter can be formed by alternately stacking the first and second inorganic films. The first inorganic film and the second inorganic film can have a refractive index of 1.3 to 6.0 in a visible light region of 400 to 700 nm, and can be formed of a material selected from the group consisting of SiO2, SiON, SiN, and Si.

Abstract: A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two ?/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The ?/4 multilayer films and spacer layer are composed of inorganic materials.

Abstract: The solid-state imaging device of the present invention includes: photodiodes which are two-dimensionally arranged; light condensers each of which condenses light and is provided in a position to correspond to two of the photodiodes which are adjacent to each other; and separating units each of which separates the light entering through the light condensers into first light having a wavelength within a predetermined range, and second light having a wavelength out of the predetermined range, and is provided in a position to correspond to one of the light condensers.

Abstract: Imager pixel arrays and methods for forming imager pixel arrays. An image sensor pixel includes a photosensor and a waveguide grating resonance filter formed over the photosensor. The waveguide grating resonance filter is configured to pass light to the photosensor in a wavelength band and to block light outside of the wavelength band. The waveguide grating resonance filter includes a grating material having a first refractive index and arranged in a grating pattern with a grating pitch, and has an effective refractive index that is a function of the first refractive index. A combination of the grating pitch and the effective refractive index is selected to correspond to the wavelength band.

Abstract: In one aspect, the present invention provides photodetectors and components thereof having multi-spectral sensing capabilities. In some embodiments, photodetectors of the present invention provide a first photosensitive element comprising at least one accessway extending through the element and an electrical connection at least partially disposed in the accessway, the electrical connection accessible for receiving a second photosensitive element.

Abstract: A finger sensor assembly may include a circuit board and an integrated circuit (IC) finger sensor grid array package including a grid array on a lower end thereof mounted to the circuit board, and a finger sensing area on an upper end thereof. The finger sensor assembly may further include at least one visible light source carried by the circuit board and a visible light guide optically coupled to the at least one visible light source. The at least one visible light source may at least partially laterally surround the upper end of the IC finger sensor grid array package to provide visual light indications. The IC finger sensor grid array package may also include circuitry for controlling the at least one visible light source.

Abstract: An optical sensor assemblage, in particular a thermopile sensor assemblage, comprising a sensor chip assemblage having an optically transparent irradiation region, a mounting region surrounding the latter, and a wire-bond region; an optically isolating mounting frame having a chip receiving region and a plurality of connector elements; and an optically isolating packaging device; the sensor chip assemblage being joined in the mounting region to the chip receiving region, and in the wire-bond region to one or more of the connector elements, the chip receiving region having a window disposed in such a way that at least a portion of the optical irradiation region is not covered by the chip receiving region; and the packaging device surrounding the sensor chip assemblage and the mounting frame in such a way that optical radiation can enter the sensor chip assemblage substantially only through the window.

Abstract: The present invention makes it possible to provide a stacked-type thin-film photoelectric conversion device having high photostability, at a high yield rate and significantly reduced production costs. In a stacked-type photoelectric conversion device having an amorphous silicon-based photoelectric conversion unit and a crystalline silicon-based photoelectric conversion unit stacked thereon or vice versa, an amorphous photoelectric conversion layer included in the amorphous photoelectric conversion unit has a thickness of at least 0.03 ?m and less than 0.17 ?m, a crystalline photoelectric conversion layer included in the crystalline photoelectric conversion unit has a thickness of at least 0.2 ?m and less than 1.0 ?m, and a silicon oxide layer of a first conductivity type included in the amorphous photoelectric conversion unit and a silicon layer of a second conductivity type included in the crystalline photoelectric conversion unit make a junction.

Abstract: A method manufactures semiconductor chips each comprising a component implanted in the semiconductor. The method includes collectively implanting components onto a front face of a semiconductor wafer and fixing the a plate of a transparent material onto the front face of the wafer. Fixing the plate of transparent material is preceded by a step of depositing, on the front face of the wafer, at least one layer of polymer material forming an optical filter. Application is particularly to the manufacturing of imagers.

Abstract: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.

Abstract: An image sensor includes a light receiving device in a substrate, a color filter over the light receiving device, a buffer film over the color filter, and a microlens on the buffer film. The microlens has a concave bottom face and a convex top face. The buffer film has a substantially flat top outside the microlens and has a convex top face below the microlens.

Abstract: A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor.

Abstract: A dual band photodetector for detecting infrared and ultraviolet optical signals is disclosed. Aspects include homojunction and heterojunction detectors comprised of one or more of GaN, AlGaN, and InGaN. In one aspect ultraviolet/infrared dual-band detector is disclosed that is configured to simultaneously detect UV and IR.

Abstract: An image sensor includes a metal interconnection and readout circuitry over a first substrate, an image sensing device, and an ion implantation isolation layer. The image sensing device is over the metal interconnection, and an ion implantation isolation layer is in the image sensing device. The image sensing device includes first, second and third color image sensing units, and ion implantation contact layers. The first, second and third color image sensing units are stacked in or on a second substrate. The ion implantation contact layers are electrically connected to the first, second and third color image sensing units, respectively.

Abstract: An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.

Abstract: A package is made of a transparent substrate having an interferometric modulator and a back plate. A non-hermetic seal joins the back plate to the substrate to form a package, and a desiccant resides inside the package. A method of packaging an interferometric modulator includes providing a transparent substrate and manufacturing an interferometric modulator array on a backside of the substrate. A back plate includes a curved portion relative to the substrate. The curved portion is substantially throughout the back plate. The back plate is sealed to the backside of the substrate with a back seal in ambient conditions, thereby forming a package.

Abstract: A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.

Abstract: A method of manufacturing a solid-state imaging device includes: a first step of forming a recess portion on a top surface of a semiconductor substrate; a second step of selectively forming an impurity region of a first conductivity type in a lower portion of the recess portion by introducing impurities from a bottom surface of the recess portion; and a third step of forming a semiconductor layer in the recess portion, thus forming a photoelectric conversion portion which includes the impurity region and the semiconductor layer.

Abstract: There is provided a CMOS image sensor and an electronic product using the same. The CMOS image sensor includes a plurality of pixels for embodying colors having different wavelengths. Each of pixels includes a buried barrier layer disposed in a semiconductor substrate and having a barrier potential energy of a conduction band thereof at an equilibrium state, a first layer disposed at a main surface of the semiconductor substrate separated from the buried barrier layer in a vertical direction and having a first potential energy of a conduction band thereof at the equilibrium state, and a second layer disposed between the first region and the buried barrier layer having a second potential energy of a conduction band thereof at the equilibrium state. The second potential energy is higher than the first potential energy and the barrier potential energy and a thickness of the second layer is thicker as the wavelength is longer.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a sensor element disposed in a semiconductor substrate; an inter-level dielectric (ILD) disposed on the semiconductor substrate; and a trench disposed in the ILD, overlying and enclosing the sensor element, and filled with a first dielectric material.

Abstract: A method and apparatus are disclosed which provide a color filter array for an imaging device in which the filters of the array are accurately positioned through the use of a patterned mask layer used to form filters for one color of the array. Additionally or alternatively, the color filter array can have a light blocking spacer to block light from being transmitted between color filters and/or to a peripheral circuitry region.

Abstract: An image sensor device includes an optical black pixel region and an active pixel region. The image sensor device includes a light receiving unit including a plurality of light sensitive semiconductor devices that are configured to detect light incident thereon, a pixel metal wire layer including a transparent material on the light receiving unit and including a plurality of metal wires therein, and a filter unit on the pixel metal wire layer. The filter unit includes a plurality of filters that are configured to transmit light according to a wavelength thereof. The filters of the filter unit in the optical black pixel region of the image sensor device have a single color. The image sensor device further includes a light blocking layer in the optical black pixel region between the filter unit and the light receiving unit. The light blocking layer is configured to block light that passes through the filter unit.

Abstract: Provided are a CMOS image sensor and a method of manufacturing the same. The CMOS image sensor includes a semiconductor substrate having photodiodes and transistors. An interlayer insulating layer is formed on the resultant structure having the photodiodes and transistors, and light blocking patterns are formed on the interlayer insulating layer to surround the peripheries of the photodiodes.

Abstract: The present invention provides an optical device that is miniature, is highly sensitive and has a simplified package, and a manufacturing method thereof with high production efficiency and high reliability. The present invention is an optical device comprising: a photoelectric conversion element (50) having at least one photoelectric conversion portion (1) which is formed on a substrate (10); a sealing material (14); and a connection terminal (3). The optical device comprises an optical window which is an interface between the photoelectric conversion element (50) and an outside of the optical device; and an aperture (6) formed in the sealing material 14, and whose bottom face is the optical window. An entire face of the optical window is exposed to the outside. An optical adjustment element (13) may be formed on the interface. In this case, the interface between the optical adjustment element (13) and the outside is the optical window.

Abstract: A display apparatus includes pixel electrodes disposed on a first base substrate, a second base substrate which faces the first base substrate, color pixels disposed on the second base substrate, the color pixels correspond to the pixel electrodes in a one-to-one correspondence, each color pixel partially covers the corresponding pixel electrode, a common electrode disposed on the second base substrate to cover the pixel electrodes and an electrophoretic layer including a plurality of electrophoretic particles, the electrophoretic layer being interposed between the pixel electrodes and the common electrode.

Abstract: An analytical system-on-a-chip can be used as an analytical imaging device, for example, for detecting the presence of a chemical compound. A layer of analytical material is formed on a transparent layer overlying a solid state image sensor. The analytical material can react in known ways with at least one reactant to block light or to allow light to pass through to the array. The underlying sensor array, in turn, can process the presence, absence or amount of light into a digitized signal output. The system-on-a-chip may also include software that can detect and analyze the output signals of the device.

Abstract: In a solid-state imaging device including an on-chip microlens and a light-receiving part to receive incident light condensed by the on-chip microlens, an optical waveguide extending from an undersurface part of the microlens to the light-receiving part and for guiding the incident light condensed by the microlens to the light-receiving part is formed to be integrated with the microlens. By this, since the incident light condensed by the microlens is incident on the light-receiving part with little loss, the sensitivity is improved.

Abstract: A dual-pixel full color complementary metal oxide semiconductor (CMOS) imager is provided, along with an associated fabrication process. Two stand-alone pixels are used for three-color detection. The first pixel is a single photodiode, and the second pixel has two photodiodes built in a stacked structure. The two photodiode stack includes an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The single photodiode includes the n doped substrate, a p doped layer overlying the substrate, and an n doped layer cathode overlying the p doped layer.

Abstract: A CMOS image sensor including a light-receiving element, at least one transistor, a first dielectric layer, a reflective layer, a second dielectric layer, a protective layer, a material layer, a transparent material layer, an optical filter, and a converging element is described. The light-receiving element and the transistor are disposed respectively inside the light sensing region and the transistor region. The first dielectric layer is disposed on the substrate, covering the transistor and the light-receiving element. The reflective layer is disposed on the first dielectric layer inside the light sensing region. The second dielectric layer is disposed on the first dielectric layer outside of the reflective layer. The material layer is disposed on the first dielectric layer inside of the reflective layer. The optical filter is disposed on the transparent material layer and the converging element is disposed on the optical filter inside the light sensing region.

Abstract: Method, apparatus, and/or system providing a backside illuminated imaging device. A non-planar metallic or otherwise reflective layer is provided in an image pixel cell at the frontside of the device substrate to capture radiation passing through the device substrate. The non-planar surface is formed to be capable of reflecting substantially all such radiation back to a photosensor located in the same pixel cell.

Abstract: The object of the invention is to provide a semiconductor device that can form photodiodes that do not short circuit, without damage that causes leakage, despite formation of the opening part, and its manufacturing method. The second semiconductor layer (12, 16) of the second conductivity type is formed on the main surface of the first semiconductor layer (10, 11) of the first conductivity type. Element-separating regions (13, 14, 15, 17) formed at least on the second semiconductor layer separate the device into the regions of plural photodiodes (PD1-PD4). Conductive layer 18 is formed on the second semiconductor layer 16 in a pattern that is divided for each of the photodiodes and is connected to the second semiconductor layer 16 along the outer periphery with respect to all of the plural photodiodes. Insulation layer (19, 21) is formed on the entire surface to cover conductive layer 18.

Abstract: An image sensor and manufacturing process thereof are provided. An image sensor according to an embodiment comprises a first wafer formed with a photodiode cell without a microlens and a second wafer formed with a circuit part including transistor and a capacitor. The first wafer is stacked on the second wafer such that a connecting electrode can be used to electrically connect the photodiode cell of the first wafer to the circuit part of the second wafer.

Abstract: A display device includes a pixel including: a gate line; a gate insulating film; a substrate; a data line; a pixel electrode; a semiconductor layer formed on the gate line and the gate insulating film; a protective film formed on the data line, the pixel electrode, and the semiconductor layer; and a thin film transistor. A portion of the gate line also serves as a gate electrode of the thin film transistor. A portion of the data line also serves as a drain electrode of the thin film transistor. A portion of the pixel electrode also serves as a source electrode of the thin film transistor. The semiconductor layer is formed of an oxide semiconductor layer. The oxide semiconductor layer is directly connected to the drain electrode and the source electrode, and the data line and the pixel electrode are formed of different conductive films.

Abstract: A solid state imaging device includes an array of active pixels and an infrared cut filter formed over the sensor. Optionally, a slot in the infrared cut filter allows infrared illumination to reach the sensor to be detected by pixels covered by a visually opaque filter and surrounded by pixels of special types that limit charge leakage and enable high dynamic range sensing of infrared illumination. A ratio of average infrared signal to average brightness indicates an amount of infrared illumination reaching the imaging device.

Abstract: An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.

Abstract: A semiconductor device includes: a plurality of pixel units disposed in a matrix shape, each of the plurality of pixel units including: a first photoelectric conversion element for converting incident light of a first color into signal charges; a second photoelectric conversion element for converting incident light of a second color into signal charges; a third photoelectric conversion element for converting incident light of a third color into signal charges; and a detector circuit shared by the first to third photoelectric conversion elements for detecting the signal charges converted by each of the first to third photoelectric conversion elements, wherein the plurality of pixel units are pixel units adjacently disposing a row (column) juxtaposing the first photoelectric conversion element and detector circuit and a row (column) juxtaposing the second and third photoelectric conversion elements.

Abstract: The image sensor includes a semiconductor substrate, a first color filter pattern formed over the substrate, the first color filter pattern having an edge portion with a first slope, and a second color filter pattern formed next to the first color filter pattern, the second color filter pattern having an edge portion with a second slope.

Abstract: Embodiments relate to a CMOS image sensor and to a method for manufacturing a CMOS image sensor that may disperse stray beam between microlenses. According to embodiments, the method for manufacturing the CMOS image may include forming an interlayer dielectric layer on a semiconductor substrate including a plurality of photo diodes, forming a color filter layer corresponding to the photo diodes on the interlayer dielectric layer, forming a planarization layer on the color filter layer, forming microlenses on the planarization layer, after depositing an insulating layer over the microlenses, forming a trench in a concave lens shape in the insulating layer between the microlenses, and forming a concave lens gap-filling insulating materials inside the trench. In embodiments, concave lenses may be formed between microlenses in a CMOS image sensor and stray beams between the microlenses may be dispersed and recondensed into the microlenses.

Abstract: A photodiode that can separately detect the intensities of the three wavelength ranges of ultraviolet light of 400 nm or below includes an insulating layer; and a plurality of silicon semiconductor layers having different thicknesses formed on the insulating layer, wherein each of the plurality of silicon semiconductor layers has a low-concentration diffusion layer formed by diffusing one of a P-type impurity or an N-type impurity therein with a low concentration; a P-type high-concentration diffusion layer formed by diffusing a P-type impurity therein with a high concentration; and an N-type high-concentration diffusion layer formed by diffusing an N-type impurity therein with a high concentration, and wherein the P-type high-concentration diffusion layer and the N-type high-concentration diffusion layer formed in a respective one of the plurality of silicon semiconductor layers are arranged to face each other with the low-concentration diffusion layer interposed there between.

Abstract: A solid-state imaging device which includes a color filter having excellent color reproduction, a manufacturing method thereof and a camera are provided. A color filter in a solid-state imaging device 1 having an optical film thickness of approximately ¼ of a set wavelength ?, being sandwiched by a third layer and a fourth layer which are spacer layers in which only 3 layers are laminated and which consist of two types of layers (first layers and a second layer) with different refractive indexes, and further, having a structure that is sandwiched by a film, a first layer, which has a film thickness approximately equal to the above ?/4. Between the two types of layers having different refractive indexes, the first layers are composed of high refractive index material, and the second layer is composed of low refractive index material.

Abstract: An optoelectronic component that includes a semiconductor device and an optical component is disclosed. The semiconductor device includes at least one radiation-sensitive zone configured to detect electromagnetic radiation. The optical element for focusing is configured to focus the electromagnetic radiation in the at least one radiation-sensitive zone. The optical element includes a diffractive element having structures on the order of magnitude of the wavelength of the electromagnetic radiation.

Abstract: A Complementary Metal Oxide Semiconductor (CMOS) image sensor includes a red photodiode formed in an first epitaxial layer, an isolation layer formed with a contact region left in a partial area of the red photodiode, a green photodiode formed in a surface of the isolation layer, a contact formed in the contact region at a predetermined spatial distance from the green photodiode, a second epitaxial layer formed on the first epitaxial layer in which the green photodiode is formed, a plurality of plugs formed in the second epitaxial layer and electrically connected to the green photodiode and the contact, a device isolation film formed in a surface of the second epitaxial layer, a blue photodiode formed in a surface of the second epitaxial layer above the green photodiode, and a well region formed in the second epitaxial layer inside the plug.

Abstract: Each of three light receiving sections has a P-type well having a P+-type layer and an N-type layer formed therein. The P+-type layer is diffused from substrate surface to depth d1. A PN junction forming portion of the N-type layer is diffused from depth d1 to depth d2 which is greater than depth d1 so as to form, with the P-type well, a PN junction of a photodiode at depth d2. Depths d1 as well as depths d2 of the three light receiving sections are different from each other. The N-type layer has a charge output portion which is diffused from the PN junction to the substrate surface, and which is coupled by circuit coupling to a MOS transistor for reading out charge. This allows each light receiving section to have spectral characteristics, thereby providing a solid state imaging element and a solid state imaging device without using color filters.

Abstract: Color image sensors include pixels having varying color characteristics. One of the pixels is a cyan-type pixel, which includes primary and secondary photodetectors therein. The primary photodetector extends adjacent a portion of a surface of a semiconductor substrate that is configured to receive visible light incident thereon. The secondary photodetector is buried in the semiconductor substrate. The secondary photodetector is configured to receive visible light that has passed through the primary photodetector.

Abstract: Disclosed herein is a solid-state imaging element which includes a plurality of drive signal inputs, a plurality of bus lines, and a plurality of vertical transfer register electrodes. In the solid-state imaging element, a charge accumulated in light-receiving elements in a pixel region is vertically transferred by the drive signals input to the electrodes. Each of the electrodes has a contact part connected to the second contact and having a width smaller than a width of the electrodes in the pixel region, and a blank region is formed between predetermined adjacent two of the contact parts so that a width of the blank region is larger than a distance between respective two of the contact parts other than the predetermined adjacent two of the contact parts. The first contact is disposed on the blank region.

Abstract: A pixel structure including a control unit, an organic electro-luminescent (OEL) unit, and a filter structure is provided. The control unit is disposed on a substrate and is driven by a scan line and a data line. The OEL unit is disposed on the substrate, and includes a transparent electrode, a light-emitting layer, and a metal electrode. The transparent electrode is electrically connected with the control unit, and the light-emitting layer and the metal electrode are sequentially placed on the transparent electrode. The filter structure is sandwiched between the substrate and the OEL unit, and the filter structure includes a plurality of the first and second dielectric layers. The first and second dielectric layers are alternately stacked, and the refractive index of the first dielectric layers is different from that of the second dielectric layers.